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<button class="button is-small is-link">Go</button> </div> </div> </form> </div> </div> <ol class="breathe-horizontal" start="1"> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2303.05469">arXiv:2303.05469</a> <span> [<a href="https://arxiv.org/pdf/2303.05469">pdf</a>, <a href="https://arxiv.org/format/2303.05469">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> </div> <p class="title is-5 mathjax"> Thin film TaAs: developing a platform for Weyl semimetal devices </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Nelson%2C+J+N">Jocienne N. Nelson</a>, <a href="/search/cond-mat?searchtype=author&query=Rice%2C+A+D">Anthony D. Rice</a>, <a href="/search/cond-mat?searchtype=author&query=Kurleto%2C+R">Rafal Kurleto</a>, <a href="/search/cond-mat?searchtype=author&query=Shackelford%2C+A">Amanda Shackelford</a>, <a href="/search/cond-mat?searchtype=author&query=Sierzega%2C+Z">Zachary Sierzega</a>, <a href="/search/cond-mat?searchtype=author&query=Jiang%2C+C">Chun-Sheng Jiang</a>, <a href="/search/cond-mat?searchtype=author&query=Norman%2C+A+G">Andrew G. Norman</a>, <a href="/search/cond-mat?searchtype=author&query=Holtz%2C+M+E">Megan E. Holtz</a>, <a href="/search/cond-mat?searchtype=author&query=Mangum%2C+J+S">John S. Mangum</a>, <a href="/search/cond-mat?searchtype=author&query=Leahy%2C+I+A">Ian A. Leahy</a>, <a href="/search/cond-mat?searchtype=author&query=Heinselman%2C+K+N">Karen N. Heinselman</a>, <a href="/search/cond-mat?searchtype=author&query=Ness%2C+H">Herve Ness</a>, <a href="/search/cond-mat?searchtype=author&query=Van+Schilfgaarde%2C+M">Mark Van Schilfgaarde</a>, <a href="/search/cond-mat?searchtype=author&query=Dessau%2C+D+S">Daniel S. Dessau</a>, <a href="/search/cond-mat?searchtype=author&query=Alberi%2C+K">Kirstin Alberi</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2303.05469v1-abstract-short" style="display: inline;"> MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin film synthesis, which is essential to enable device applications. We synthesize TaAs… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2303.05469v1-abstract-full').style.display = 'inline'; document.getElementById('2303.05469v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2303.05469v1-abstract-full" style="display: none;"> MX monopnictide compounds (M=Nb,Ta, X = As,P) are prototypical three-dimensional Weyl semimetals (WSMs) that have been shown in bulk single crystal form to have potential for a wide variety of novel devices due to topologically protected band structures and high mobilities. However, very little is known about thin film synthesis, which is essential to enable device applications. We synthesize TaAs(001) epilayers by molecular beam epitaxy on GaAs(001) and provide an experimental phase diagram illustrating conditions for single phase, single-crystal-like growth. We investigate the relationship between nanoscale defects and electronic structure, using angle-resolved photoemission spectroscopy, Kelvin probe microscopy and transmission electron microscopy. Our results provide a roadmap and platform for developing 3D WSMs for device applications. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2303.05469v1-abstract-full').style.display = 'none'; document.getElementById('2303.05469v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 9 March, 2023; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> March 2023. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">12 pages, 5 figures</span> </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2206.10023">arXiv:2206.10023</a> <span> [<a href="https://arxiv.org/pdf/2206.10023">pdf</a>, <a href="https://arxiv.org/ps/2206.10023">ps</a>, <a href="https://arxiv.org/format/2206.10023">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1103/PhysRevB.107.L220206">10.1103/PhysRevB.107.L220206 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Direct link between disorder, mobility and magnetoresistance in topological semimetals </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Nelson%2C+J+N">Jocienne N. Nelson</a>, <a href="/search/cond-mat?searchtype=author&query=Rice%2C+A+D">Anthony D. Rice</a>, <a href="/search/cond-mat?searchtype=author&query=Brooks%2C+C">Chase Brooks</a>, <a href="/search/cond-mat?searchtype=author&query=Leahy%2C+I+A">Ian A. Leahy</a>, <a href="/search/cond-mat?searchtype=author&query=Teeter%2C+G">Glenn Teeter</a>, <a href="/search/cond-mat?searchtype=author&query=Van+Schilfgaarde%2C+M">Mark Van Schilfgaarde</a>, <a href="/search/cond-mat?searchtype=author&query=Lany%2C+S">Stephan Lany</a>, <a href="/search/cond-mat?searchtype=author&query=Fluegel%2C+B">Brian Fluegel</a>, <a href="/search/cond-mat?searchtype=author&query=Lee%2C+M">Minhyea Lee</a>, <a href="/search/cond-mat?searchtype=author&query=Alberi%2C+K">Kirstin Alberi</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2206.10023v1-abstract-short" style="display: inline;"> The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the r… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2206.10023v1-abstract-full').style.display = 'inline'; document.getElementById('2206.10023v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2206.10023v1-abstract-full" style="display: none;"> The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the role of disorder on electron transport behavior. We find that arsenic vacancies introduce localized states near the Fermi level and strongly influence the electron mobility. Reducing arsenic vacancies by changing the As/Cd flux ratio used during deposition results in an increase in the magnetoresistance from 200%-1000% and an increase in mobility from 5000-18,000 cm$^2$/Vs. However, the degree of linear magnetoresistance, which has previously been linked to disorder, is found here to correlate inversely with measures of disorder, including disorder potential and disorder correlation lengths. This finding yields important new information in the quest to identify the origin of linear magnetoresistance in a wider range of materials. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2206.10023v1-abstract-full').style.display = 'none'; document.getElementById('2206.10023v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 20 June, 2022; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> June 2022. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">19 pages, 3 main figures, 4 supplemental figures</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> Phys. Rev. B 107, L220206 2023 </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1909.12487">arXiv:1909.12487</a> <span> [<a href="https://arxiv.org/pdf/1909.12487">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> </div> <p class="title is-5 mathjax"> Surface Reconstructions of Heusler Compounds in the Ni-Ti-Sn (001) System </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rice%2C+A+D">Anthony D. Rice</a>, <a href="/search/cond-mat?searchtype=author&query=Sharan%2C+A">Abhishek Sharan</a>, <a href="/search/cond-mat?searchtype=author&query=Wilson%2C+N+S">Nathaniel S. Wilson</a>, <a href="/search/cond-mat?searchtype=author&query=Harrington%2C+S+D">Sean D. Harrington</a>, <a href="/search/cond-mat?searchtype=author&query=Pendharkar%2C+M">Mihir Pendharkar</a>, <a href="/search/cond-mat?searchtype=author&query=Janotti%2C+A">Anderson Janotti</a>, <a href="/search/cond-mat?searchtype=author&query=Palmstr%C3%B8m%2C+C+J">Chris J. Palmstr酶m</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1909.12487v1-abstract-short" style="display: inline;"> As progress is made on thin-film synthesis of Heusler compounds, a more complete understanding of the surface will be required to control their properties, especially as functional heterostructures are explored. Here, the surface reconstructions of semiconducting half-Heusler NiTiSn(001), and Ni1+xTiSn(001) (x=0.0-1.0) are explored as a way to optimize growth conditions during molecular beam epita… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1909.12487v1-abstract-full').style.display = 'inline'; document.getElementById('1909.12487v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1909.12487v1-abstract-full" style="display: none;"> As progress is made on thin-film synthesis of Heusler compounds, a more complete understanding of the surface will be required to control their properties, especially as functional heterostructures are explored. Here, the surface reconstructions of semiconducting half-Heusler NiTiSn(001), and Ni1+xTiSn(001) (x=0.0-1.0) are explored as a way to optimize growth conditions during molecular beam epitaxy. Density functional theory (DFT) calculations were carried out to guide the interpretation of the experimental results. For NiTiSn(001) a c(2x2) surface reconstruction was observed for Sn rich samples, while a (1x1) unreconstructed surface was observed for Ti-rich samples. A narrow range around 1:1:1 stoichiometry exhibited a (2x1) surface reconstruction. Electrical transport is used to relate the observed reflection high energy electron diffraction (RHEED) pattern during and after growth with carrier concentration and stoichiometry. Scanning tunneling microscopy and RHEED were used to examine surface reconstructions, the results of which are in good agreement with density functional calculations. X-ray photoelectron spectroscopy was used to determine surface termination and stoichiometry. Atomic surface models are proposed, which suggest Sn-dimers form in reconstructed Ni1+xTiSn(001) half-Heusler surfaces (x<0.25) with a transition to Ni terminated surfaces for x > 0.25. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1909.12487v1-abstract-full').style.display = 'none'; document.getElementById('1909.12487v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 27 September, 2019; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> September 2019. </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1711.05320">arXiv:1711.05320</a> <span> [<a href="https://arxiv.org/pdf/1711.05320">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1103/PhysRevMaterials.2.014406">10.1103/PhysRevMaterials.2.014406 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Harrington%2C+S+D">Sean D. Harrington</a>, <a href="/search/cond-mat?searchtype=author&query=Rice%2C+A+D">Anthony D. Rice</a>, <a href="/search/cond-mat?searchtype=author&query=Brown-Heft%2C+T">Tobias Brown-Heft</a>, <a href="/search/cond-mat?searchtype=author&query=Bonef%2C+B">Bastien Bonef</a>, <a href="/search/cond-mat?searchtype=author&query=Sharan%2C+A">Abhishek Sharan</a>, <a href="/search/cond-mat?searchtype=author&query=McFadden%2C+A+P">Anthony P. McFadden</a>, <a href="/search/cond-mat?searchtype=author&query=Logan%2C+J+A">John A. Logan</a>, <a href="/search/cond-mat?searchtype=author&query=Pendharkar%2C+M">Mihir Pendharkar</a>, <a href="/search/cond-mat?searchtype=author&query=Feldman%2C+M+M">Mayer M. Feldman</a>, <a href="/search/cond-mat?searchtype=author&query=Mercan%2C+O">Ozge Mercan</a>, <a href="/search/cond-mat?searchtype=author&query=Petukhov%2C+A+G">Andre G. Petukhov</a>, <a href="/search/cond-mat?searchtype=author&query=Janotti%2C+A">Anderson Janotti</a>, <a href="/search/cond-mat?searchtype=author&query=Arslan%2C+L+%C3%87">Leyla 脟olakerol Arslan</a>, <a href="/search/cond-mat?searchtype=author&query=Palmstr%C3%B8m%2C+C+J">Chris J. Palmstr酶m</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1711.05320v1-abstract-short" style="display: inline;"> Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$\leq$x$\leq$1.0. The influence of Fe on the structural, electronic, and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1711.05320v1-abstract-full').style.display = 'inline'; document.getElementById('1711.05320v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1711.05320v1-abstract-full" style="display: none;"> Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$\leq$x$\leq$1.0. The influence of Fe on the structural, electronic, and magnetic properties was studied and compared to that expected from density functional theory. The films are epitaxial and single crystalline, as measured by reflection high-energy electron diffraction and X-ray diffraction. Using in-situ X-ray photoelectron spectroscopy, only small changes in the valence band are detected for x$\leq$0.5. For films with x$\geq$0.05, ferromagnetism is observed in SQUID magnetometry with a saturation magnetization that scales linearly with Fe content. A dramatic decrease in the magnetic moment per formula unit occurs when the Fe is substitutionally alloyed on the Co site indicating a strong dependence on the magnetic moment with site occupancy. A crossover from both in-plane and out-of-plane magnetic moments to only in-plane moment occurs for higher concentrations of Fe. Ferromagnetic resonance indicates a transition from weak to strong interaction with a reduction in inhomogeneous broadening as Fe content is increased. Temperature-dependent transport reveals a semiconductor to metal transition with thermally activated behavior for x$\leq$0.5. Anomalous Hall effect and large negative magnetoresistance (up to -18.5% at 100 kOe for x=0.3) are observed for higher Fe content films. Evidence of superparamagnetism for x=0.3 and x=0.2 suggests for moderate levels of Fe, demixing of the CoTi$_{1-x}$Fe$_x$Sb films into Fe rich and Fe deficient regions may be present. Atom probe tomography is used to examine the Fe distribution in a x=0.3 film. Statistical analysis reveals a nonhomogeneous distribution of Fe atoms throughout the film, which is used to explain the observed magnetic and electrical behavior. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1711.05320v1-abstract-full').style.display = 'none'; document.getElementById('1711.05320v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 14 November, 2017; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> November 2017. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> Phys. Rev. Materials 2, 014406 (2018) </p> </li> </ol> <div class="is-hidden-tablet">  <span class="help" style="display: inline-block;"><a href="https://github.com/arXiv/arxiv-search/releases">Search v0.5.6 released 2020-02-24</a>  </span> </div> </div> </main> <footer> <div class="columns is-desktop" role="navigation" aria-label="Secondary">  <div class="column"> <div class="columns"> <div class="column"> <ul class="nav-spaced"> <li><a href="https://info.arxiv.org/about">About</a></li> <li><a href="https://info.arxiv.org/help">Help</a></li> </ul> </div> <div class="column"> <ul class="nav-spaced"> <li> <svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 512 512" class="icon filter-black" role="presentation"><title>contact arXiv</title><desc>Click here to contact arXiv</desc><path d="M502.3 190.8c3.9-3.1 9.7-.2 9.7 4.7V400c0 26.5-21.5 48-48 48H48c-26.5 0-48-21.5-48-48V195.6c0-5 5.7-7.8 9.7-4.7 22.4 17.4 52.1 39.5 154.1 113.6 21.1 15.4 56.7 47.8 92.2 47.6 35.7.3 72-32.8 92.3-47.6 102-74.1 131.6-96.3 154-113.7zM256 320c23.2.4 56.6-29.2 73.4-41.4 132.7-96.3 142.8-104.7 173.4-128.7 5.8-4.5 9.2-11.5 9.2-18.9v-19c0-26.5-21.5-48-48-48H48C21.5 64 0 85.5 0 112v19c0 7.4 3.4 14.3 9.2 18.9 30.6 23.9 40.7 32.4 173.4 128.7 16.8 12.2 50.2 41.8 73.4 41.4z"/></svg> <a href="https://info.arxiv.org/help/contact.html"> Contact</a> </li> <li> <svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 512 512" class="icon filter-black" role="presentation"><title>subscribe to arXiv mailings</title><desc>Click here to subscribe</desc><path d="M476 3.2L12.5 270.6c-18.1 10.4-15.8 35.6 2.2 43.2L121 358.4l287.3-253.2c5.5-4.9 13.3 2.6 8.6 8.3L176 407v80.5c0 23.6 28.5 32.9 42.5 15.8L282 426l124.6 52.2c14.2 6 30.4-2.9 33-18.2l72-432C515 7.8 493.3-6.8 476 3.2z"/></svg> <a href="https://info.arxiv.org/help/subscribe"> Subscribe</a> </li> </ul> </div> </div> </div>   <div class="column"> <div class="columns"> <div class="column"> <ul class="nav-spaced"> <li><a href="https://info.arxiv.org/help/license/index.html">Copyright</a></li> <li><a href="https://info.arxiv.org/help/policies/privacy_policy.html">Privacy Policy</a></li> </ul> </div> <div class="column sorry-app-links"> <ul class="nav-spaced"> <li><a href="https://info.arxiv.org/help/web_accessibility.html">Web Accessibility Assistance</a></li> <li> <p class="help"> <a class="a11y-main-link" href="https://status.arxiv.org" target="_blank">arXiv Operational Status <svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 256 512" class="icon filter-dark_grey" role="presentation"><path d="M224.3 273l-136 136c-9.4 9.4-24.6 9.4-33.9 0l-22.6-22.6c-9.4-9.4-9.4-24.6 0-33.9l96.4-96.4-96.4-96.4c-9.4-9.4-9.4-24.6 0-33.9L54.3 103c9.4-9.4 24.6-9.4 33.9 0l136 136c9.5 9.4 9.5 24.6.1 34z"/></svg></a><br> Get status notifications via <a class="is-link" href="https://subscribe.sorryapp.com/24846f03/email/new" target="_blank"><svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 512 512" class="icon filter-black" role="presentation"><path d="M502.3 190.8c3.9-3.1 9.7-.2 9.7 4.7V400c0 26.5-21.5 48-48 48H48c-26.5 0-48-21.5-48-48V195.6c0-5 5.7-7.8 9.7-4.7 22.4 17.4 52.1 39.5 154.1 113.6 21.1 15.4 56.7 47.8 92.2 47.6 35.7.3 72-32.8 92.3-47.6 102-74.1 131.6-96.3 154-113.7zM256 320c23.2.4 56.6-29.2 73.4-41.4 132.7-96.3 142.8-104.7 173.4-128.7 5.8-4.5 9.2-11.5 9.2-18.9v-19c0-26.5-21.5-48-48-48H48C21.5 64 0 85.5 0 112v19c0 7.4 3.4 14.3 9.2 18.9 30.6 23.9 40.7 32.4 173.4 128.7 16.8 12.2 50.2 41.8 73.4 41.4z"/></svg>email</a> or <a class="is-link" href="https://subscribe.sorryapp.com/24846f03/slack/new" target="_blank"><svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 448 512" class="icon filter-black" role="presentation"><path d="M94.12 315.1c0 25.9-21.16 47.06-47.06 47.06S0 341 0 315.1c0-25.9 21.16-47.06 47.06-47.06h47.06v47.06zm23.72 0c0-25.9 21.16-47.06 47.06-47.06s47.06 21.16 47.06 47.06v117.84c0 25.9-21.16 47.06-47.06 47.06s-47.06-21.16-47.06-47.06V315.1zm47.06-188.98c-25.9 0-47.06-21.16-47.06-47.06S139 32 164.9 32s47.06 21.16 47.06 47.06v47.06H164.9zm0 23.72c25.9 0 47.06 21.16 47.06 47.06s-21.16 47.06-47.06 47.06H47.06C21.16 243.96 0 222.8 0 196.9s21.16-47.06 47.06-47.06H164.9zm188.98 47.06c0-25.9 21.16-47.06 47.06-47.06 25.9 0 47.06 21.16 47.06 47.06s-21.16 47.06-47.06 47.06h-47.06V196.9zm-23.72 0c0 25.9-21.16 47.06-47.06 47.06-25.9 0-47.06-21.16-47.06-47.06V79.06c0-25.9 21.16-47.06 47.06-47.06 25.9 0 47.06 21.16 47.06 47.06V196.9zM283.1 385.88c25.9 0 47.06 21.16 47.06 47.06 0 25.9-21.16 47.06-47.06 47.06-25.9 0-47.06-21.16-47.06-47.06v-47.06h47.06zm0-23.72c-25.9 0-47.06-21.16-47.06-47.06 0-25.9 21.16-47.06 47.06-47.06h117.84c25.9 0 47.06 21.16 47.06 47.06 0 25.9-21.16 47.06-47.06 47.06H283.1z"/></svg>slack</a> </p> </li> </ul> </div> </div> </div>  </div> </footer> <script src="https://static.arxiv.org/static/base/1.0.0a5/js/member_acknowledgement.js"></script> </body> </html>

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