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<button class="button is-small is-link">Go</button> </div> </div> </form> </div> </div> <ol class="breathe-horizontal" start="1"> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2405.17385">arXiv:2405.17385</a> <span> [<a href="https://arxiv.org/pdf/2405.17385">pdf</a>, <a href="https://arxiv.org/format/2405.17385">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Quantum Physics">quant-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Strongly Correlated Electrons">cond-mat.str-el</span> </div> </div> <p class="title is-5 mathjax"> Thermalization and Criticality on an Analog-Digital Quantum Simulator </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Andersen%2C+T+I">Trond I. Andersen</a>, <a href="/search/cond-mat?searchtype=author&query=Astrakhantsev%2C+N">Nikita Astrakhantsev</a>, <a href="/search/cond-mat?searchtype=author&query=Karamlou%2C+A+H">Amir H. Karamlou</a>, <a href="/search/cond-mat?searchtype=author&query=Berndtsson%2C+J">Julia Berndtsson</a>, <a href="/search/cond-mat?searchtype=author&query=Motruk%2C+J">Johannes Motruk</a>, <a href="/search/cond-mat?searchtype=author&query=Szasz%2C+A">Aaron Szasz</a>, <a href="/search/cond-mat?searchtype=author&query=Gross%2C+J+A">Jonathan A. Gross</a>, <a href="/search/cond-mat?searchtype=author&query=Schuckert%2C+A">Alexander Schuckert</a>, <a href="/search/cond-mat?searchtype=author&query=Westerhout%2C+T">Tom Westerhout</a>, <a href="/search/cond-mat?searchtype=author&query=Zhang%2C+Y">Yaxing Zhang</a>, <a href="/search/cond-mat?searchtype=author&query=Forati%2C+E">Ebrahim Forati</a>, <a href="/search/cond-mat?searchtype=author&query=Rossi%2C+D">Dario Rossi</a>, <a href="/search/cond-mat?searchtype=author&query=Kobrin%2C+B">Bryce Kobrin</a>, <a href="/search/cond-mat?searchtype=author&query=Di+Paolo%2C+A">Agustin Di Paolo</a>, <a href="/search/cond-mat?searchtype=author&query=Klots%2C+A+R">Andrey R. Klots</a>, <a href="/search/cond-mat?searchtype=author&query=Drozdov%2C+I">Ilya Drozdov</a>, <a href="/search/cond-mat?searchtype=author&query=Kurilovich%2C+V+D">Vladislav D. Kurilovich</a>, <a href="/search/cond-mat?searchtype=author&query=Petukhov%2C+A">Andre Petukhov</a>, <a href="/search/cond-mat?searchtype=author&query=Ioffe%2C+L+B">Lev B. Ioffe</a>, <a href="/search/cond-mat?searchtype=author&query=Elben%2C+A">Andreas Elben</a>, <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">Aniket Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Vitale%2C+V">Vittorio Vitale</a>, <a href="/search/cond-mat?searchtype=author&query=Vermersch%2C+B">Benoit Vermersch</a>, <a href="/search/cond-mat?searchtype=author&query=Acharya%2C+R">Rajeev Acharya</a>, <a href="/search/cond-mat?searchtype=author&query=Beni%2C+L+A">Laleh Aghababaie Beni</a> , et al. (202 additional authors not shown) </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2405.17385v2-abstract-short" style="display: inline;"> Understanding how interacting particles approach thermal equilibrium is a major challenge of quantum simulators. Unlocking the full potential of such systems toward this goal requires flexible initial state preparation, precise time evolution, and extensive probes for final state characterization. We present a quantum simulator comprising 69 superconducting qubits which supports both universal qua… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2405.17385v2-abstract-full').style.display = 'inline'; document.getElementById('2405.17385v2-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2405.17385v2-abstract-full" style="display: none;"> Understanding how interacting particles approach thermal equilibrium is a major challenge of quantum simulators. Unlocking the full potential of such systems toward this goal requires flexible initial state preparation, precise time evolution, and extensive probes for final state characterization. We present a quantum simulator comprising 69 superconducting qubits which supports both universal quantum gates and high-fidelity analog evolution, with performance beyond the reach of classical simulation in cross-entropy benchmarking experiments. Emulating a two-dimensional (2D) XY quantum magnet, we leverage a wide range of measurement techniques to study quantum states after ramps from an antiferromagnetic initial state. We observe signatures of the classical Kosterlitz-Thouless phase transition, as well as strong deviations from Kibble-Zurek scaling predictions attributed to the interplay between quantum and classical coarsening of the correlated domains. This interpretation is corroborated by injecting variable energy density into the initial state, which enables studying the effects of the eigenstate thermalization hypothesis (ETH) in targeted parts of the eigenspectrum. Finally, we digitally prepare the system in pairwise-entangled dimer states and image the transport of energy and vorticity during thermalization. These results establish the efficacy of superconducting analog-digital quantum processors for preparing states across many-body spectra and unveiling their thermalization dynamics. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2405.17385v2-abstract-full').style.display = 'none'; document.getElementById('2405.17385v2-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 8 July, 2024; <span class="has-text-black-bis has-text-weight-semibold">v1</span> submitted 27 May, 2024; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> May 2024. </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2401.04270">arXiv:2401.04270</a> <span> [<a href="https://arxiv.org/pdf/2401.04270">pdf</a>, <a href="https://arxiv.org/format/2401.04270">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Quantum Physics">quant-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Statistical Mechanics">cond-mat.stat-mech</span> </div> </div> <p class="title is-5 mathjax"> Observing the quantum Mpemba effect in quantum simulations </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Joshi%2C+L+K">Lata Kh Joshi</a>, <a href="/search/cond-mat?searchtype=author&query=Franke%2C+J">Johannes Franke</a>, <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">Aniket Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Ares%2C+F">Filiberto Ares</a>, <a href="/search/cond-mat?searchtype=author&query=Murciano%2C+S">Sara Murciano</a>, <a href="/search/cond-mat?searchtype=author&query=Kranzl%2C+F">Florian Kranzl</a>, <a href="/search/cond-mat?searchtype=author&query=Blatt%2C+R">Rainer Blatt</a>, <a href="/search/cond-mat?searchtype=author&query=Zoller%2C+P">Peter Zoller</a>, <a href="/search/cond-mat?searchtype=author&query=Vermersch%2C+B">Beno卯t Vermersch</a>, <a href="/search/cond-mat?searchtype=author&query=Calabrese%2C+P">Pasquale Calabrese</a>, <a href="/search/cond-mat?searchtype=author&query=Roos%2C+C+F">Christian F. Roos</a>, <a href="/search/cond-mat?searchtype=author&query=Joshi%2C+M+K">Manoj K. Joshi</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2401.04270v2-abstract-short" style="display: inline;"> The non-equilibrium physics of many-body quantum systems harbors various unconventional phenomena. In this study, we experimentally investigate one of the most puzzling of these phenomena -- the quantum Mpemba effect, where a tilted ferromagnet restores its symmetry more rapidly when it is farther from the symmetric state compared to when it is closer. We present the first experimental evidence of… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2401.04270v2-abstract-full').style.display = 'inline'; document.getElementById('2401.04270v2-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2401.04270v2-abstract-full" style="display: none;"> The non-equilibrium physics of many-body quantum systems harbors various unconventional phenomena. In this study, we experimentally investigate one of the most puzzling of these phenomena -- the quantum Mpemba effect, where a tilted ferromagnet restores its symmetry more rapidly when it is farther from the symmetric state compared to when it is closer. We present the first experimental evidence of the occurrence of this effect in a trapped-ion quantum simulator. The symmetry breaking and restoration are monitored through entanglement asymmetry, probed via randomized measurements, and postprocessed using the classical shadows technique. Our findings are further substantiated by measuring the Frobenius distance between the experimental state and the stationary thermal symmetric theoretical state, offering direct evidence of subsystem thermalization. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2401.04270v2-abstract-full').style.display = 'none'; document.getElementById('2401.04270v2-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 15 July, 2024; <span class="has-text-black-bis has-text-weight-semibold">v1</span> submitted 8 January, 2024; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> January 2024. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">11 pages, 7 figures. Published version</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> Phys. Rev. Lett. 133, 010402, 2024 </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2209.04393">arXiv:2209.04393</a> <span> [<a href="https://arxiv.org/pdf/2209.04393">pdf</a>, <a href="https://arxiv.org/format/2209.04393">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Quantum Physics">quant-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Statistical Mechanics">cond-mat.stat-mech</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1103/PRXQuantum.4.010318">10.1103/PRXQuantum.4.010318 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Entanglement barrier and its symmetry resolution: theory and experiment </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">Aniket Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Vitale%2C+V">Vittorio Vitale</a>, <a href="/search/cond-mat?searchtype=author&query=Murciano%2C+S">Sara Murciano</a>, <a href="/search/cond-mat?searchtype=author&query=Votto%2C+M">Matteo Votto</a>, <a href="/search/cond-mat?searchtype=author&query=Dubail%2C+J">J茅r么me Dubail</a>, <a href="/search/cond-mat?searchtype=author&query=Kueng%2C+R">Richard Kueng</a>, <a href="/search/cond-mat?searchtype=author&query=Branciard%2C+C">Cyril Branciard</a>, <a href="/search/cond-mat?searchtype=author&query=Calabrese%2C+P">Pasquale Calabrese</a>, <a href="/search/cond-mat?searchtype=author&query=Vermersch%2C+B">Beno卯t Vermersch</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2209.04393v1-abstract-short" style="display: inline;"> The operator entanglement (OE) is a key quantifier of the complexity of a reduced density matrix. In out-of-equilibrium situations, e.g. after a quantum quench of a product state, it is expected to exhibit an entanglement barrier. The OE of a reduced density matrix initially grows linearly as entanglement builds up between the local degrees of freedom, it then reaches a maximum, and ultimately dec… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2209.04393v1-abstract-full').style.display = 'inline'; document.getElementById('2209.04393v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2209.04393v1-abstract-full" style="display: none;"> The operator entanglement (OE) is a key quantifier of the complexity of a reduced density matrix. In out-of-equilibrium situations, e.g. after a quantum quench of a product state, it is expected to exhibit an entanglement barrier. The OE of a reduced density matrix initially grows linearly as entanglement builds up between the local degrees of freedom, it then reaches a maximum, and ultimately decays to a small finite value as the reduced density matrix converges to a simple stationary state through standard thermalization mechanisms. Here, by performing a new data analysis of the published experimental results of [Brydges et al., Science 364, 260 (2019)], we obtain the first experimental measurement of the OE of a subsystem reduced density matrix in a quantum many-body system. We employ the randomized measurements toolbox and we introduce and develop a new efficient method to post-process experimental data in order to extract higher-order density matrix functionals and access the OE. The OE thus obtained displays the expected barrier as long as the experimental system is large enough. For smaller systems, we observe a barrier with a double-peak structure, whose origin can be interpreted in terms of pairs of quasi-particles being reflected at the boundary of the qubit chain. As $U(1)$ symmetry plays a key role in our analysis, we introduce the notion of symmetry resolved operator entanglement (SROE), in addition to the total OE. To gain further insights into the SROE, we provide a thorough theoretical analysis of this new quantity in chains of non-interacting fermions, which, in spite of their simplicity, capture most of the main features of OE and SROE. In particular, we uncover three main physical effects: the presence of a barrier in any charge sector, a time delay for the onset of the growth of SROE, and an effective equipartition between charge sectors. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2209.04393v1-abstract-full').style.display = 'none'; document.getElementById('2209.04393v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 9 September, 2022; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> September 2022. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">13 + 24 pages with 3 + 7 figures</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> Phys. Rev. X Quantum 4, 010318 (2023) </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1610.03797">arXiv:1610.03797</a> <span> [<a href="https://arxiv.org/pdf/1610.03797">pdf</a>, <a href="https://arxiv.org/format/1610.03797">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1103/PhysRevB.94.235309">10.1103/PhysRevB.94.235309 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Peterson%2C+T+A">T. A. Peterson</a>, <a href="/search/cond-mat?searchtype=author&query=Patel%2C+S+J">S. J. Patel</a>, <a href="/search/cond-mat?searchtype=author&query=Geppert%2C+C+C">C. C. Geppert</a>, <a href="/search/cond-mat?searchtype=author&query=Christie%2C+K+D">K. D. Christie</a>, <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">A. Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Pennachio%2C+D">D. Pennachio</a>, <a href="/search/cond-mat?searchtype=author&query=Flatt%C3%A9%2C+M+E">M. E. Flatt茅</a>, <a href="/search/cond-mat?searchtype=author&query=Voyles%2C+P+M">P. M. Voyles</a>, <a href="/search/cond-mat?searchtype=author&query=Palmstr%C3%B8m%2C+C+J">C. J. Palmstr酶m</a>, <a href="/search/cond-mat?searchtype=author&query=Crowell%2C+P+A">P. A. Crowell</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1610.03797v1-abstract-short" style="display: inline;"> We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $渭$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $渭$m spin diffusion length and applying a forward bias to the detector contact. Th… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1610.03797v1-abstract-full').style.display = 'inline'; document.getElementById('1610.03797v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1610.03797v1-abstract-full" style="display: none;"> We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $渭$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $渭$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured $n$-GaAs spin lifetime over the entire temperature range. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1610.03797v1-abstract-full').style.display = 'none'; document.getElementById('1610.03797v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 12 October, 2016; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> October 2016. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">8 figures</span> </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1208.0238">arXiv:1208.0238</a> <span> [<a href="https://arxiv.org/pdf/1208.0238">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> </div> <p class="title is-5 mathjax"> Gold assisted molecular beam epitaxy of Ge nanostructures on Ge(100) Surface </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">A. Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Dash%2C+J+K">J. K. Dash</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Ghosh%2C+A">A. Ghosh</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P. V. Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1208.0238v1-abstract-short" style="display: inline;"> We report on the gold assisted epitaxial growth of Ge nanostructures under ultra high vacuum (UHV) conditions (\approx3\times 10-10 mbar) on clean Ge (100) surfaces. For this study, \approx2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \approx500掳C and following this, well ordered… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1208.0238v1-abstract-full').style.display = 'inline'; document.getElementById('1208.0238v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1208.0238v1-abstract-full" style="display: none;"> We report on the gold assisted epitaxial growth of Ge nanostructures under ultra high vacuum (UHV) conditions (\approx3\times 10-10 mbar) on clean Ge (100) surfaces. For this study, \approx2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \approx500掳C and following this, well ordered gold nanostructures placed on pedestal Ge were formed. A \approx 2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of \approx 500掳C. The height of the Ge (pedestal) underneath gold increased along with the formation of small Ge islands. The effect of substrate temperature and role of gold on the formation of above structures has been discussed in detail. Electron microscopy (TEM, SEM) studies were carried out to determine the structure of Au - Ge nano systems. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1208.0238v1-abstract-full').style.display = 'none'; document.getElementById('1208.0238v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 1 August, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> August 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">13 pages, 5 figures. arXiv admin note: substantial text overlap with arXiv:1202.0614</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> CrystEngComm 16 (12), 2486-2490 (2014) </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1205.6039">arXiv:1205.6039</a> <span> [<a href="https://arxiv.org/pdf/1205.6039">pdf</a>, <a href="https://arxiv.org/ps/1205.6039">ps</a>, <a href="https://arxiv.org/format/1205.6039">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1088/0022-3727/45/45/455303">10.1088/0022-3727/45/45/455303 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Shape evolution of MBE grown Si$_{1-x}$Ge$_{x}$ structures on high index Si(5 5 12) surfaces: A temperature dependent study </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Dash%2C+J+K">J. K. Dash</a>, <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">A. Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P. V. Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1205.6039v2-abstract-short" style="display: inline;"> The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature (RT) to 800$^\circ$C. Two modes of substrate heating i.e. radiative heating (RH) and direct current heating (DH) have been used. The post-growth characterizati… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1205.6039v2-abstract-full').style.display = 'inline'; document.getElementById('1205.6039v2-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1205.6039v2-abstract-full" style="display: none;"> The morphological evolution and the effect of growth temperature on size, orientation and composition of molecular beam epitaxy grown Ge-Si islands on Si(5 5 12) surfaces have been investigated in the temperature range from room temperature (RT) to 800$^\circ$C. Two modes of substrate heating i.e. radiative heating (RH) and direct current heating (DH) have been used. The post-growth characterization was carried out ex situ by scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (X-TEM) and Rutherford backscattering spectrometry (RBS). In the RH case, we found spherical island structures at 600$^\circ$C with a bimodal distribution and upon increasing temperature, the structures got faceted at 700$^\circ$C. At 800$^\circ$C thick ($\sim$ 122nm) dome like structures are formed bounded by facets. While in the case of DC heating, after the optimum critical temperature 600$^\circ$C, well aligned trapezoidal Si$_{1-x}$Ge$_x$ structures with a graded composition starts forming along the step edges. Interestingly, these aligned structures have been found only around 600$^\circ$C, neither at low temperature nor at higher temperatures. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1205.6039v2-abstract-full').style.display = 'none'; document.getElementById('1205.6039v2-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 7 September, 2012; <span class="has-text-black-bis has-text-weight-semibold">v1</span> submitted 28 May, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> May 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">11 pages, 7 figures</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> 2012 J. Phys. D: Appl. Phys. 45 455303 </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1204.5370">arXiv:1204.5370</a> <span> [<a href="https://arxiv.org/pdf/1204.5370">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1007/s00339-014-8876-3">10.1007/s00339-014-8876-3 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Structural modification in Au/Si(100) system: Role of surface oxide and vacuum level </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">A. Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Dash%2C+J+K">J. K Dash</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P. V. Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1204.5370v1-abstract-short" style="display: inline;"> To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was done at 500掳C in three different vacuum conditions: (1) low vacuum (LV) furnace (10-2 mbar), (2) UHV (10-10 mbar) (MBE chamber), (3) high vacuum (HV) chamber. The… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1204.5370v1-abstract-full').style.display = 'inline'; document.getElementById('1204.5370v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1204.5370v1-abstract-full" style="display: none;"> To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was done at 500掳C in three different vacuum conditions: (1) low vacuum (LV) furnace (10-2 mbar), (2) UHV (10-10 mbar) (MBE chamber), (3) high vacuum (HV) chamber. The variation in the overall shape of the gold nanostructures and finer changes at the edges, like rounding of corners has been reported in this work. Although well aligned nano rectangles were formed in both HV and LV cases, corner rounding is more prominent in LV case. Furthermore in UHV case, random structures were formed having sharp corners. In all the above three cases, samples were exposed to air (for half an hour) before annealing. To study the effect of surface oxide, in-situ annealing inside UHV-MBE chamber was done without exposing to air. Well aligned rectangles with sharp corners (no corner rounding) were formed. The details about the role of surface oxides in the corner rounding process are discussed. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1204.5370v1-abstract-full').style.display = 'none'; document.getElementById('1204.5370v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 24 April, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> April 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">11 pages, 3 figures</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> Applied Physics A. 118 (3), 1079-1085 (2015) </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1204.4618">arXiv:1204.4618</a> <span> [<a href="https://arxiv.org/pdf/1204.4618">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1063/1.4875666">10.1063/1.4875666 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Dynamic and Static Transmission Electron Microscopy Studies on Structural Evaluation of Au nano islands on Si (100) Surface </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">Ashutosh Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P. V. Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1204.4618v1-abstract-short" style="display: inline;"> Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In-situ, high temperature (from room temperature (RT) to 8… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1204.4618v1-abstract-full').style.display = 'inline'; document.getElementById('1204.4618v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1204.4618v1-abstract-full" style="display: none;"> Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under high vacuum condition (with the native oxide at the interface of Au and Si) using thermal evaporation. In-situ, high temperature (from room temperature (RT) to 850\degreeC) real time TEM measurements showed the evaluation of gold nanoparticles into rectangular/square shaped gold silicide structures. This has been attributed to selective thermal decomposition of native oxide layer. Ex-situ annealing in low vacuum (10-2 mbar) at 850\degreeC showed no growth of nano-gold silicide structures. Under low vacuum annealing conditions, the creation of oxide could be dominating compared to the decomposition of oxide layers resulting in the formation of barrier layer between Au and Si. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1204.4618v1-abstract-full').style.display = 'none'; document.getElementById('1204.4618v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 20 April, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> April 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">15 pages, 4 figures</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> J. Appl. Phys. 115, 184303 (2014) </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1204.0578">arXiv:1204.0578</a> <span> [<a href="https://arxiv.org/pdf/1204.0578">pdf</a>, <a href="https://arxiv.org/ps/1204.0578">ps</a>, <a href="https://arxiv.org/format/1204.0578">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1209/0295-5075/99/66004">10.1209/0295-5075/99/66004 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Universality in Shape Evolution of Si$_{1-x}$Ge$_{x}$ Structures on High Index Silicon Surfaces </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Dash%2C+J+K">J. K. Dash</a>, <a href="/search/cond-mat?searchtype=author&query=Bagarti%2C+T">T. Bagarti</a>, <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">A. Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P. V. Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1204.0578v1-abstract-short" style="display: inline;"> The MBE grown Si$_{1-x}$Ge$_x$ islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth exponent parameters, \emph{irrespective} of the substrate orientations and size of the island structures. This phenomena has been explained by incorporating a deviation parameter ($蔚$) to the surface barrier term (… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1204.0578v1-abstract-full').style.display = 'inline'; document.getElementById('1204.0578v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1204.0578v1-abstract-full" style="display: none;"> The MBE grown Si$_{1-x}$Ge$_x$ islands on reconstructed high index surfaces, such as, Si(5 5 12), Si(5 5 7) and Si(5 5 3) show a universality in the shape evaluation and the growth exponent parameters, \emph{irrespective} of the substrate orientations and size of the island structures. This phenomena has been explained by incorporating a deviation parameter ($蔚$) to the surface barrier term ($E_D$) in the kinematic Monte Carlo (kMC) simulations as one of the plausible mechanisms. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1204.0578v1-abstract-full').style.display = 'none'; document.getElementById('1204.0578v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 2 April, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> April 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">4 pages, 5 figures</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> EPL, 99 (2012) 66004 </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1203.0819">arXiv:1203.0819</a> <span> [<a href="https://arxiv.org/pdf/1203.0819">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1063/1.3698505">10.1063/1.3698505 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Growth of Oriented Au Nanostructures: Role of Oxide at the Interface </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">Ashutosh Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Dash%2C+J+K">J. K. Dash</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Rosenauer%2C+A">A. Rosenauer</a>, <a href="/search/cond-mat?searchtype=author&query=Schoewalter%2C+M">Marcos Schoewalter</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P. V. Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1203.0819v1-abstract-short" style="display: inline;"> We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1203.0819v1-abstract-full').style.display = 'inline'; document.getElementById('1203.0819v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1203.0819v1-abstract-full" style="display: none;"> We report on the formation of oriented gold nano structures on Si(100) substrate by annealing procedures in low vacuum (\approx10-2 mbar) and at high temperature (\approx 975^{\circ} C). Various thicknesses of gold films have been deposited with SiOx (using high vacuum thermal evaporation) and without SiOx (using molecular beam epitaxy) at the interface on Si(100). Electron microscopy measurements were performed to determine the morphology, orientation of the structures and the nature of oxide layer. Interfacial oxide layer, low vacuum and high temperature annealing conditions are found to be necessary to grow oriented gold structures. These gold structures can be transferred by simple scratching method. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1203.0819v1-abstract-full').style.display = 'none'; document.getElementById('1203.0819v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 5 March, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> March 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">13 pages, 3 figures, Accepted in J. Appl. Phys</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> J. Appl. Phys. 111, 064322 (2012) </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1202.0647">arXiv:1202.0647</a> <span> [<a href="https://arxiv.org/pdf/1202.0647">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1088/0022-3727/44/11/115301">10.1088/0022-3727/44/11/115301 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">Ashutosh Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Dash%2C+J+K">J. K. Dash</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Rosenauer%2C+A">A Rosenauer</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P V Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1202.0647v1-abstract-short" style="display: inline;"> Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were used prior to gold thin film deposition: (i) without native oxide and on ultra-clean reconstructed Si surfaces and (ii) with native oxide covered Si surfaces. For… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1202.0647v1-abstract-full').style.display = 'inline'; document.getElementById('1202.0647v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1202.0647v1-abstract-full" style="display: none;"> Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were used prior to gold thin film deposition: (i) without native oxide and on ultra-clean reconstructed Si surfaces and (ii) with native oxide covered Si surfaces. For a \approx 2.0 nm thick Au films deposited on reconstructed Si(100) surfaces using molecular beam epitaxy method under ultra high vacuum conditions, aligned four-fold symmetric nanogold silicide structures formed at relatively lower temperatures (compared with the one with native oxide at the interface). For this system, 82% of the nanostructures were found to be nano rectangles like structures with an average length \approx 27 nm and aspect ratio of 1.13 at \approx 700掳C. For \approx 5.0 nm thick Au films deposited on Si (100) surface with native oxide at the interface, formation of rectangular structures were observed at higher temperatures (\approx 850掳 C). At these high temperatures, desorption of the gold silicide followed the symmetry of the substrate. Native oxide at the interface was found to act like a barrier for the inter-diffusion phenomena. Structural characterization was carried out using advanced electron microscopy methods. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1202.0647v1-abstract-full').style.display = 'none'; document.getElementById('1202.0647v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 3 February, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> February 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">27 pages, 7 figures, 1 Table</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> J. Phys. D: Appl. Phys. 44 115301(2011) </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/1202.0614">arXiv:1202.0614</a> <span> [<a href="https://arxiv.org/pdf/1202.0614">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Mesoscale and Nanoscale Physics">cond-mat.mes-hall</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1063/1.4721666">10.1063/1.4721666 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Rath%2C+A">Ashutosh Rath</a>, <a href="/search/cond-mat?searchtype=author&query=Dash%2C+J+K">J. K. Dash</a>, <a href="/search/cond-mat?searchtype=author&query=Juluri%2C+R+R">R. R. Juluri</a>, <a href="/search/cond-mat?searchtype=author&query=Schowalter%2C+M">Marco Schowalter</a>, <a href="/search/cond-mat?searchtype=author&query=Mueller%2C+K">Knut Mueller</a>, <a href="/search/cond-mat?searchtype=author&query=Rosenauer%2C+A">A. Rosenauer</a>, <a href="/search/cond-mat?searchtype=author&query=Satyam%2C+P+V">P. V. Satyam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="1202.0614v1-abstract-short" style="display: inline;"> We report on the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions (\approx 3\times 10^{-10} mbar) on clean Si(100) surfaces. For this study, \approx 2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \apprx 500掳C and following this, nearly… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1202.0614v1-abstract-full').style.display = 'inline'; document.getElementById('1202.0614v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="1202.0614v1-abstract-full" style="display: none;"> We report on the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions (\approx 3\times 10^{-10} mbar) on clean Si(100) surfaces. For this study, \approx 2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy (MBE). Thermal annealing was carried out inside the UHV chamber at temperature \apprx 500掳C and following this, nearly square shaped Au_{x}Si_{1-x} nano structures of average length \approx 48 nm were formed. A \approx 2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of \approx 500掳C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au - Ge nano systems. Rutherford backscattering Spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('1202.0614v1-abstract-full').style.display = 'none'; document.getElementById('1202.0614v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 3 February, 2012; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> February 2012. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">23 pages, 6 Figures, 1 Table</span> </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> J. Appl. Phys. 111, 104319 (2012);arXiv:1202.0614 </p> </li> </ol> <div class="is-hidden-tablet">  <span class="help" style="display: inline-block;"><a href="https://github.com/arXiv/arxiv-search/releases">Search v0.5.6 released 2020-02-24</a>  </span> </div> </div> </main> <footer> <div class="columns is-desktop" role="navigation" aria-label="Secondary">  <div class="column"> <div class="columns"> <div class="column"> <ul class="nav-spaced"> <li><a href="https://info.arxiv.org/about">About</a></li> <li><a href="https://info.arxiv.org/help">Help</a></li> </ul> </div> <div class="column"> <ul class="nav-spaced"> <li> <svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 512 512" class="icon filter-black" role="presentation"><title>contact arXiv</title><desc>Click here to contact arXiv</desc><path d="M502.3 190.8c3.9-3.1 9.7-.2 9.7 4.7V400c0 26.5-21.5 48-48 48H48c-26.5 0-48-21.5-48-48V195.6c0-5 5.7-7.8 9.7-4.7 22.4 17.4 52.1 39.5 154.1 113.6 21.1 15.4 56.7 47.8 92.2 47.6 35.7.3 72-32.8 92.3-47.6 102-74.1 131.6-96.3 154-113.7zM256 320c23.2.4 56.6-29.2 73.4-41.4 132.7-96.3 142.8-104.7 173.4-128.7 5.8-4.5 9.2-11.5 9.2-18.9v-19c0-26.5-21.5-48-48-48H48C21.5 64 0 85.5 0 112v19c0 7.4 3.4 14.3 9.2 18.9 30.6 23.9 40.7 32.4 173.4 128.7 16.8 12.2 50.2 41.8 73.4 41.4z"/></svg> <a href="https://info.arxiv.org/help/contact.html"> Contact</a> </li> <li> <svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 512 512" class="icon filter-black" role="presentation"><title>subscribe to arXiv mailings</title><desc>Click here to subscribe</desc><path d="M476 3.2L12.5 270.6c-18.1 10.4-15.8 35.6 2.2 43.2L121 358.4l287.3-253.2c5.5-4.9 13.3 2.6 8.6 8.3L176 407v80.5c0 23.6 28.5 32.9 42.5 15.8L282 426l124.6 52.2c14.2 6 30.4-2.9 33-18.2l72-432C515 7.8 493.3-6.8 476 3.2z"/></svg> <a href="https://info.arxiv.org/help/subscribe"> Subscribe</a> </li> </ul> </div> </div> </div>   <div class="column"> <div class="columns"> <div class="column"> <ul class="nav-spaced"> <li><a href="https://info.arxiv.org/help/license/index.html">Copyright</a></li> <li><a href="https://info.arxiv.org/help/policies/privacy_policy.html">Privacy Policy</a></li> </ul> </div> <div class="column sorry-app-links"> <ul class="nav-spaced"> <li><a href="https://info.arxiv.org/help/web_accessibility.html">Web Accessibility Assistance</a></li> <li> <p class="help"> <a class="a11y-main-link" href="https://status.arxiv.org" target="_blank">arXiv Operational Status <svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 256 512" class="icon filter-dark_grey" role="presentation"><path d="M224.3 273l-136 136c-9.4 9.4-24.6 9.4-33.9 0l-22.6-22.6c-9.4-9.4-9.4-24.6 0-33.9l96.4-96.4-96.4-96.4c-9.4-9.4-9.4-24.6 0-33.9L54.3 103c9.4-9.4 24.6-9.4 33.9 0l136 136c9.5 9.4 9.5 24.6.1 34z"/></svg></a><br> Get status notifications via <a class="is-link" href="https://subscribe.sorryapp.com/24846f03/email/new" target="_blank"><svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 512 512" class="icon filter-black" role="presentation"><path d="M502.3 190.8c3.9-3.1 9.7-.2 9.7 4.7V400c0 26.5-21.5 48-48 48H48c-26.5 0-48-21.5-48-48V195.6c0-5 5.7-7.8 9.7-4.7 22.4 17.4 52.1 39.5 154.1 113.6 21.1 15.4 56.7 47.8 92.2 47.6 35.7.3 72-32.8 92.3-47.6 102-74.1 131.6-96.3 154-113.7zM256 320c23.2.4 56.6-29.2 73.4-41.4 132.7-96.3 142.8-104.7 173.4-128.7 5.8-4.5 9.2-11.5 9.2-18.9v-19c0-26.5-21.5-48-48-48H48C21.5 64 0 85.5 0 112v19c0 7.4 3.4 14.3 9.2 18.9 30.6 23.9 40.7 32.4 173.4 128.7 16.8 12.2 50.2 41.8 73.4 41.4z"/></svg>email</a> or <a class="is-link" href="https://subscribe.sorryapp.com/24846f03/slack/new" target="_blank"><svg xmlns="http://www.w3.org/2000/svg" viewBox="0 0 448 512" class="icon filter-black" role="presentation"><path d="M94.12 315.1c0 25.9-21.16 47.06-47.06 47.06S0 341 0 315.1c0-25.9 21.16-47.06 47.06-47.06h47.06v47.06zm23.72 0c0-25.9 21.16-47.06 47.06-47.06s47.06 21.16 47.06 47.06v117.84c0 25.9-21.16 47.06-47.06 47.06s-47.06-21.16-47.06-47.06V315.1zm47.06-188.98c-25.9 0-47.06-21.16-47.06-47.06S139 32 164.9 32s47.06 21.16 47.06 47.06v47.06H164.9zm0 23.72c25.9 0 47.06 21.16 47.06 47.06s-21.16 47.06-47.06 47.06H47.06C21.16 243.96 0 222.8 0 196.9s21.16-47.06 47.06-47.06H164.9zm188.98 47.06c0-25.9 21.16-47.06 47.06-47.06 25.9 0 47.06 21.16 47.06 47.06s-21.16 47.06-47.06 47.06h-47.06V196.9zm-23.72 0c0 25.9-21.16 47.06-47.06 47.06-25.9 0-47.06-21.16-47.06-47.06V79.06c0-25.9 21.16-47.06 47.06-47.06 25.9 0 47.06 21.16 47.06 47.06V196.9zM283.1 385.88c25.9 0 47.06 21.16 47.06 47.06 0 25.9-21.16 47.06-47.06 47.06-25.9 0-47.06-21.16-47.06-47.06v-47.06h47.06zm0-23.72c-25.9 0-47.06-21.16-47.06-47.06 0-25.9 21.16-47.06 47.06-47.06h117.84c25.9 0 47.06 21.16 47.06 47.06 0 25.9-21.16 47.06-47.06 47.06H283.1z"/></svg>slack</a> </p> </li> </ul> </div> </div> </div>  </div> </footer> <script src="https://static.arxiv.org/static/base/1.0.0a5/js/member_acknowledgement.js"></script> </body> </html>

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