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font-size: 16px; text-align: justify; text-indent: 32px;">北京大学物理学院凝聚态物理与材料物理研究所、人工微结构和介观物理国家重点实验室、纳光电子前沿科学中心王新强课题组、李新征课题组和化学与分子工程学院彭海琳课题组合作，针对二维材料上III族氮化物半导体界面耦合机制及单晶材料外延难题，实验与理论相结合，证明准范德华外延是在石墨烯上制备大尺寸、高质量、易剥离氮化物半导体单晶材料及光电子器件的首选外延方法。研究成果以“III族氮化物半导体在湿法转移石墨烯上的外延范式”（Determination of the preferred epitaxy for III-nitride semico<em></em>nductors on wet-transferred graphene）为题于2023年8月2日发表于《科学进展》（Science Advances），并被选为当期特色文章(Featured Article)。</span></p> <p class="vsbcontent_img" style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 0px; text-align: center; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;"><img src="http://www.casmita.com/file/upload/202308/25/140558112.png" width="500" vsbhref="vurl" vurl="/_vsl/04AEDC2EEDE93D5D610D9BA630C86CB9/2CAB5F38/225ED" vheight="" vwidth="500" orisrc="/__local/E/E9/7E/F87959010D0392D1DEE63145376_70D7A7E1_1EB784.png" class="img_vsb_content" style="box-sizing: border-box; border-width: 1px; border-style: solid; border-color: rgb(204, 204, 204); border-image: initial !im<em></em>portant; vertical-align: middle; max-width: 100%; height: auto; margin-top: 15px;" alt="" /></p> <p style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 32px; text-align: center; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;"><span style="box-sizing: border-box; line-height: 18px; text-indent: 2em; font-size: 12px;">图1.《科学进展》刊发北京大学联合团队在氮化物半导体外延技术领域新进展</span></p> <p style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 32px; text-align: justify; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;">以石墨烯（graphene）为代表的二维材料与以氮化镓（GaN）为代表的III族氮化物半导体面内晶格对称性匹配、生长兼容性良好，其交叉研究被视作克服氮化物半导体异质外延体系界面大失配、难分离问题，研制高质量易剥离单晶材料和多功能光电子器件的可行途径之一。深刻理解氮化物半导体与二维材料的界面耦合机制与外延架构，掌握二维材料上氮化物半导体单晶材料制备技术，是半导体外延和器件研究领域的前沿热点之一。根据氮化物半导体与二维材料界面耦合形式的不同，二维材料上氮化物半导体外延方案一般包括范德华外延（van der Waals epitaxy）、远程外延（remote epitaxy）和准范德华外延（quasi-van der Waals epitaxy）三种形式。然而，其外延范式仍是一个悬而未决的问题。</p> <p style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 32px; text-align: justify; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;">针对这一关键科学问题，北京大学联合研究团队从强极性氮化铝（AlN）材料入手，开展了氮化物半导体远程外延和准范德华外延研究。在前期工作基础上[Adv. Mater. 2022, 34(5): 2106814；Adv. Funct. Mater. 2020, 30(22): 2001283；Adv. Sci. 2020, 7(21): 2000917]，为抑制化学气相沉积和湿法转移过程中的结构破损，避免氮化物半导体外延生长过程中的原子辐照损伤和热分解损伤，研究团队选择在湿法转移的超平整单晶graphene和强极性AlN模板上采用MOCVD技术开展AlN远程外延研究。理论与实验结果表明，单层graphene和强极性AlN的结合可为氮化物半导体远程外延提供极强的远程相互作用（作用强度同比来自石墨烯的纯范德华力强约1个量级），但其仅能约束AlN晶粒具有和底层AlN模板相同的晶格极性，不能约束AlN晶粒的面内取向，导致远程外延AlN自发地具有由扭曲晶粒组成的多晶结构。调整氮化物半导体的种类（AlN或GaN）或二维材料的类型（graphene或h-BN）和厚度（1-3 MLs），远程外延得到的外延层始终具有多晶结构。需要注意的是，当graphene厚度较薄时（如1 ML），AlN外延层中将存在远程外延和通孔外延（thru-hole epitaxy）两种成分，随着生长的进行，graphene破损处的通孔外延成分不断扩展并掩埋远程外延组分，导致外延层呈现单晶结构。此时，外延层的单晶结构来自于通孔外延而非远程外延。</p> <p style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 32px; text-align: justify; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;">利用准范德华外延，研究团队在多晶钼衬底上制备出晶格极性可控的AlN和GaN单晶薄膜，在单晶AlN模板上制备出转角可控的twisted AlN单晶薄膜。整体而言，准范德华外延对转移graphene的完整度与结晶度、底层衬底的晶体结构与晶格对称性、氮化物半导体的生长方法和动力学调控过程等具有很好的兼容性，是在二维材料上制备高质量易剥离氮化物半导体单晶材料及功能器件的最优技术路线。上述研究工作解决了长期以来关于graphene等二维材料上氮化物半导体单晶材料外延范式的争论，有望推动低成本、大尺寸氮化物半导体异质结构及其光电、电子器件在二维材料上的产业化制造。</p> <p class="vsbcontent_img" style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 0px; text-align: center; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;"><img src="http://www.casmita.com/file/upload/202308/25/140558722.png" width="500" vsbhref="vurl" vurl="/_vsl/3A01D44C17DAE66625AC0E9A22A38000/062C8B0A/60FC5" vheight="" vwidth="500" orisrc="/__local/3/A0/1D/44C17DAE66625AC0E9A22A38000_062C8B0A_60FC5.png" class="img_vsb_content" style="box-sizing: border-box; border-width: 1px; border-style: solid; border-color: rgb(204, 204, 204); border-image: initial !im<em></em>portant; vertical-align: middle; max-width: 100%; height: auto; margin-top: 15px;" alt="" /></p> <p style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 32px; text-align: justify; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;"><span style="box-sizing: border-box; line-height: 18px; text-indent: 2em; font-size: 12px;">图2.单晶graphene上氮化物半导体外延生长模型：A，氮化物半导体远程外延模型。B,氮化物半导体准范德华外延模型。C，通过远程外延在1-ML graphene/AlN(0001)模板上制备AlN薄膜的HAADF-STEM图。由于面内取向的显著差异，远程外延AlN晶粒无法聚并形成单晶薄膜。D，通过准范德华外延在3-ML graphene/AlN(0001)模板上制备AlN薄膜的HAADF-STEM图。取向规则的AlN晶粒聚并形成单晶薄膜。</span></p> <p style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 32px; text-align: justify; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;">北京大学特聘副研究员刘放、高级工程师王涛、博士生高欣、博士生杨怀远为论文共同第一作者，王新强教授、彭海琳教授、李新征教授为论文共同通讯作者。合作者包括北京大学沈波教授和刘开辉教授、北京科技大学张智宏副教授、松山湖材料实验室袁冶副研究员及北京大学分析测试中心曹晓帆等。研究工作得到了国家重点研发计划、国家自然科学基金、博士后创新人才支持计划、北京高校卓越青年科学家计划等的支持。</p> <p class="vsbcontent_end" style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; font-size: 16px; line-height: 24px; text-indent: 32px; text-align: justify; font-family: 微软雅黑, Helvetica, 黑体, Arial, Tahoma;">论文原文链接：https://www.science.org/doi/10.1126/sciadv.adf8484</p> <p class="vsbcontent_end" style="box-sizing: border-box; margin: 0px 0px 10px; word-break: break-all; line-height: 24px; text-indent: 32px; text-align: justify;"><font face="微软雅黑, Helvetica, 黑体, Arial, Tahoma"><span style="font-size: 16px;">来源：北京大学物理学院</span></font></p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=13048');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=13048"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> <a href="http://www.casmita.com/news/search.php?kw="></a><a 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