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class="content-box"> <h1 class="title" id="title">英飞凌推出全球最薄硅功率晶圆,突破技术极限并提高能效</h1> <div class="info"> <span style="padding-right:1em">日期:2024-10-30</span> <span id="hits">阅读:285</span> </div> <div class="introduce">核心提示:英飞凌官微消息,继宣布推出全球首款300mm氮化镓(GaN)功率半导体晶圆和在马来西亚居林建成全球最大的200mm碳化硅(SiC)功率半</div><div id="content"><div class="content" id="article"><p> 英飞凌官微消息,继宣布推出<a href="file:///D:/docu<em></em>ments/Desktop/%E6%96%B0%E5%BB%BA%20DOCX%20%E6%96%87%E6%A1%A3.docx#wechat_redirect">全球首款300mm氮化镓(GaN)功率半导体晶圆</a>和在<a href="file:///D:/docu<em></em>ments/Desktop/%E6%96%B0%E5%BB%BA%20DOCX%20%E6%96%87%E6%A1%A3.docx#wechat_redirect">马来西亚居林建成全球最大的200mm碳化硅(SiC)功率半导体晶圆厂</a>之后,英飞凌再次在半导体制造技术领域取得新的里程碑。英飞凌在处理和加工史上最薄的硅功率晶圆方面取得了突破性进展,这种晶圆直径为300mm,厚度为20μm。厚度仅有头发丝的四分之一,是目前最先进的40-60μm晶圆厚度的一半。</p> <p> 英飞凌科技首席执行官Jochen Hanebeck表示,这款全球最薄的硅晶圆展现了我们致力于通过推动功率半导体技术的发展,为客户创造非凡的价值。英飞凌在超薄晶圆技术方面的突破标志着我们在节能功率解决方案领域迈出了重要一步,并且有助于我们充分发挥全球低碳化和数字化趋势的潜力。凭借这项技术突破,英飞凌掌握了Si、SiC和GaN这三种半导体材料,巩固了我们在行业创新方面的领先优势。 </p> <p>这项创新将有助于大幅提高功率转换解决方案的能效、功率密度和可靠性,适用于AI数据中心,以及消费、电机控制和计算应用。与基于传统硅晶圆的解决方案相比,晶圆厚度减半可将基板电阻降低50%,从而使功率系统中的功率损耗减少15%以上。对于高端AI服务器应用来说,电流增大会推动能源需求上升,因此,将电压从230V降低到1.8V以下的处理器电压,对于功率转换来说尤为重要。超薄晶圆技术大大促进了基于垂直沟槽MOSFET技术的垂直功率传输设计。这种设计实现了与AI芯片处理器的高度紧密连接,在减少功率损耗的同时,提高了整体效率。 </p> <p>英飞凌科技电源与传感系统事业部总裁Adam White表示,新型超薄晶圆技术推动了我们以最节能的方式为从电网到核心的不同类型的AI服务器配置提供动力的雄心。随着AI数据中心的能源需求大幅上升,能效变得日益重要。这给英飞凌带来了快速发展的机遇。基于中双位数的增长率,预计我们的AI业务收入在未来两年内将达到10亿欧元。</p> <p>由于将芯片固定在晶圆上的金属叠层厚度大于20μm,因此为了克服将晶圆厚度降低至20μm的技术障碍,英飞凌的工程师们必须建立一种创新而独特的晶圆研磨方法。这极大地影响了薄晶圆背面的处理和加工。此外,与技术和生产相关的挑战,如晶圆翘曲度和晶圆分离,对确保晶圆稳定性和一流稳健性的后端装配工艺也有重大影响。20μm薄晶圆工艺以英飞凌现有的制造技术为基础,确保新技术能够无缝集成到现有的大批量Si生产线中,而不会产生额外的制造复杂性,从而保证尽可能高的产量和供应安全性。</p> <p> 该技术已获得认可,并被应用于英飞凌的集成智能功率级(直流-直流转换器)中,且已交付给首批客户。同时,该技术还拥有与20μm晶圆技术相关的强大专利组合,体现了英飞凌在半导体制造领域的创新领先优势。随着目前超薄晶圆技术的发展,英飞凌预测在未来三到四年内,现有的传统晶圆技术将被用于低压功率转换器的替代技术所取代。这项突破进一步巩固了英飞凌在市场上的独特地位。英飞凌目前拥有全面的产品和技术组合,覆盖了基于Si、SiC和GaN的器件,这些器件是推动低碳化和数字化的关键因素。</p> <p> </p> <p> </p></div> </div> <div class="award"><div 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