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href="http://service.weibo.com/share/share.php?title=%E4%B8%9C%E5%8D%97%E5%A4%A7%E5%AD%A6%EF%BC%8CNature+Electronics%EF%BC%81&url=http%3A%2F%2Fwww.casmita.com%2Fnews%2F202411%2F01%2F17063.html&pic=" target="_blank"><i class="icon icon-weibo"></i><span>微博</span></a> <a class="share-qzone" href="https://sns.qzone.qq.com/cgi-bin/qzshare/cgi_qzshare_onekey?url=http%3A%2F%2Fwww.casmita.com%2Fnews%2F202411%2F01%2F17063.html&title=%E4%B8%9C%E5%8D%97%E5%A4%A7%E5%AD%A6%EF%BC%8CNature+Electronics%EF%BC%81" target="_blank"><i class="icon icon-qzone"></i><span>Qzone</span></a> <a class="share-wechat"><i class="icon icon-wechat"></i><span>微信</span></a> </div> <div class="content-box"> <h1 class="title" id="title">东南大学，Nature Electronics！</h1> <div class="info"> <span style="padding-right:1em">日期：2024-11-01</span> <span id="hits">阅读：623</span> </div> <div class="introduce">核心提示：东南大学章琦，吕俊鹏以及倪振华等人携手在“Nature Electronics”期刊上发表了题为“Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates”的最新论文。</div><div id="content"><div class="content" id="article"><p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/01/184749662.jpg" width="668" height="379" alt="" /></p> <p><strong> <span style="text-indent: 2em;">研究背景</span></strong></p> <p>二维材料LED是一类基于二维过渡金属二硫属化合物（TMDs）的发光器件，因其在显示和光通信等领域的潜在应用而备受关注。与传统的体相半导体材料相比，二维材料具有量子限域效应和介电屏蔽效应减弱等特点，使其在纳米级光电器件设计中具有出色的性能。然而，二维材料LED在高激子生成率下易出现激子–激子湮灭（EEA）效应，这导致量子效率的迅速下降，成为该材料应用于高性能发光器件的一大挑战。</p> <p>鉴于此，东南大学章琦，吕俊鹏以及倪振华等人携手在“Nature Electronics”期刊上发表了题为“Light-emitting diodes ba<em></em>sed on intercalated transition me<em></em>tal dichalcogenides with suppressed efficiency roll-off at high generation rates”的最新论文。该团队通过氧等离子体插层的方式，制备了基于少层二硫化钼（MoS2）和二硫化钨（WS2）的脉冲发光二极管（LED）。这种氧插层工艺成功地在层间插入氧原子，使得紧密堆叠的少层结构形成类量子阱的超晶格结构，从而抑制了激子–激子相互作用，并提高了发光亮度。利用插层后的少层TMDs器件，显著提高了量子效率，实现了在高激子生成率下无效率下降的电致发光。通过光谱测量，研究人员发现，插层工艺降低了激子玻尔半径和扩散系数，从而有效抑制了EEA效应。</p> <p>该研究展示了基于插层TMDs的新型LED在发光性能上的提升，在高激子生成率约1020 cm−2 s−1时，二硫化钼和二硫化钨的外量子效率分别达到了0.02%和0.78%。这一成果为高性能二维LED的设计提供了新思路，为二维材料在光电领域的应用奠定了基础。</p> <p><strong>研究亮点</strong></p> <p>1) 实验首次将氧等离子体插层应用于少层过渡金属二硫属化合物（TMDs），成功制备了类似量子阱的超晶格结构。此方法在少层二硫化钼（MoS₂）和二硫化钨（WS₂）中实现了层间剥离，形成了若干准单层的堆叠。</p> <p>2) 实验通过氧等离子体插层，减少了激子玻尔半径和激子扩散系数，从而显著抑制了激子-激子湮灭（EEA）现象。光谱测量显示，插层后的少层TMDs在光激发和电注入发光下，在高激子密度（约1020 cm⁻² s⁻¹）下不出现效率下降。</p> <p>3) 实验结果表明，基于插层的MoS₂和WS₂的LED在较高生成率下仍可保持较高的外量子效率（EQE），分别达到0.02%和0.78%。这些LED在高电流密度下无效率下降，表明其具有优异的抗EEA特性。</p> <div style="text-indent: 28px;"> <div style=""><img src="http://www.casmita.com/file/upload/202411/01/184815742.png" width="668" height="567" alt="" /></div> <div style=""><b>图1: 氧等离子体插层。</b></div> <div style=""><b><img src="http://www.casmita.com/file/upload/202411/01/184831932.png" width="668" height="705" alt="" /></b></div> <div style=""><b><br /> </b></div> <div style=""><b>图2: 激子-激子湮灭exciton–exciton annihilation，EEA抑制机制。</b></div> <div style=""><b><img src="http://www.casmita.com/file/upload/202411/01/184845772.png" width="668" height="950" alt="" /></b></div> <div style=""><b><br /> </b></div> <div style=""><b>图3: 基于三层二维过渡金属硫族化合物trilayer transition me<em></em>tal dichalcogenides，3L TMD的瞬态二维发光二极管light-emitting diodes，LED。</b></div> <div style=""><b><img src="http://www.casmita.com/file/upload/202411/01/184908572.png" width="668" height="426" alt="" /></b></div> <div style=""><b><br /> </b></div> <div style=""><b>图4: 基于插层的三层3L MoS2和WS2的瞬态2D LED的电致发光electroluminescence，EL 外量子效率external quantum efficiency，EQE。</b></div> <div style="font-weight: bold;"> </div> </div> <div style="text-indent: 28px;"> </div> <div style="text-indent: 28px;"> <div><strong>总结展望</strong></div> <div>这篇文章为二维材料（如氧等离子体插层的几层TMDs）在光电器件中的应用提供了新的视角。通过氧等离子体插层，研究者成功抑制了三层插层MoS₂中的激子-电子复合，从而实现了明亮的发光特性，并保持有限的非辐射复合中心。这一发现表明，气体插层可以有效调节二维材料的激子相互作用，如激子Bohr半径和扩散系数的变化，这为优化器件性能提供了新的思路。此外，在高电流密度下实现了无效率滚降的光致发光和电注入发光，表明其在高效LED应用中的潜力。实验与理论相结合的方法，尤其是通过密度泛函理论计算和传输矩阵算法的联合应用，揭示了材料的光学特性与结构之间的内在联系，为未来材料的设计和性能优化提供了重要的指导。</div> <div> </div> <div><strong>原文详情：</strong></div> <div>Wang, S., Fu, Q., Zheng, T. et al. Light-emitting diodes ba<em></em>sed on intercalated transition me<em></em>tal dichalcogenides with suppressed efficiency roll-off at high generation rates. Nat Electron (2024). https://doi.org/10.1038/s41928-024-01264-3</div> <div> </div> </div></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=17063');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=17063"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> <a href="http://www.casmita.com/news/search.php?kw="></a><a href="http://www.casmita.com/news/index.php?catid=4"></a> <div class="bui-box single-mode"> <div class="single-mode-rbox"> <div class="single-mode-rbox-inner"> <div class="title-box"><a href="http://www.casmita.com/news/202411/26/17255.html" target="_blank" class="link">晶驰机电半导体材料装备研发生产项目投产</a></div> <div class="bui-box tags-bar"></div> <div class="bui-box 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