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icon-qzone"></i><span>Qzone</span></a> <a class="share-wechat"><i class="icon icon-wechat"></i><span>微信</span></a> </div> <div class="content-box"> <h1 class="title" id="title">镓仁半导体氧化镓单晶生长突破性成果在晶体领域顶刊Crystal Growth & Design上发表</h1> <div class="info"> <span style="padding-right:1em">日期：2025-02-11</span> <span style="padding-right:1em">来源：镓仁半导体</span><span id="hits">阅读：604</span> </div> <div class="introduce">核心提示：杭州镓仁半导体联合浙江大学研究团队，在β-氧化镓（β-Ga2O3）单晶生长领域取得关键技术突破！</div><div id="content"><div class="content" id="article"><p> <span style="text-indent: 2em;">近日，杭州镓仁半导体联合浙江大学研究团队，在β-氧化镓（β-Ga2O3）单晶生长领域取得关键技术突破！在国际知名期刊Crystal Growth & Design第25卷/第3期发表了题为《Highly Coherent Grain Boundaries Induced by Local Pseudomirror Symmetry in β-Ga2O3》的研究论文。  β-Ga2O3是一种极易在单晶生长与外延过程中产生孪晶的材料，严重制约了单晶生长与外延的良率提升。本研究从对称性（Symmetry）原理出发，首次提出了β-Ga2O3中的准对称性（Pseudo Symmetry），成功解析了（100）孪晶界与“共格非对称孪晶界”的物理起源，破解了β-Ga2O3易形成孪晶的“基因”。有助于从科学原理与工程设计的层面提升单晶生长与外延的良率，为高性能器件开发扫清关键障碍。参考此研究结果，镓仁研发团队基于自研氧化镓专用设备对β-Ga2O3生长工艺开展优化迭代，初步解决了孪晶这一行业难题。</span></p> <p style="text-align: center;"><span style="text-indent: 2em;"><img src="http://www.casmita.com/file/upload/202502/11/092854262.png" width="668" height="217" alt="" /></span></p> <p><strong>Part.01文章导读</strong></p> <p>对称性是宏观世界的核心概念之一，从天体运动的角动量守恒，到自然生物的形态与功能，都深受对称性的影响。即便在更为微观的原子尺度，对称性亦不可或缺。对于晶体材料的透彻理解，同样离不开对其对称性的深刻认识，β-Ga2O3也并不例外。β-Ga2O3是一种具有广阔应用前景的宽禁带半导体材料。众所周知，β-Ga2O3的空间群为C2/m，相较于具有P63mc空间群的4H-SiC与GaN，其对称操作更少，对称性也更低。在图1所示β-Ga2O3单胞中，存在具有镜面对称性的（010）面，以及具有二次旋转对称性与螺旋旋转对称性的[010]晶向。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/092917862.png" width="668" height="643" alt="" /></p> <p style="text-align: center;">【图1】 β-Ga2O3单胞中的标准对称性</p> <p>然而，在上述严格的对称性之外，β-Ga2O3还具有特殊的“准对称性”（Pseudo Symmetry）。如图2（a）所示，β-Ga2O3具有“准镜面对称”的原子层结构，“准镜面对称”的含义是，该层原子的镜像和它本身之间的位置并不严格重合，但仅仅差了微不足道的一点距离。该原子层的“准镜面对称”面垂直于（100）面，在图2（a）中标注为黑色虚线，该“准对称面”的间距为：</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/092948102.png" width="182" height="92" style="text-align: center;" alt="" /></p> <p>这一“准对称性”使β-Ga2O3的单晶生长和外延过程中极易出现（100）面的孪晶。正如图2（b）所示，在形成孪晶结构后，孪晶界面处几乎没有原子的位移与键的扭曲，其孪晶界面能仅为0.008J/m2——几乎等于没有！</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/093051962.png" width="668" height="913" alt="" /></p> <p style="text-align: center;">【图2】（a）β-Ga2O3中的准对称原子层；（b）建立于准对称性上的β-Ga2O3的（100）面孪晶</p> <p>此时，另一个巧合出现：β-Ga2O3的单胞结构存在特殊的“晶格巧合”，如图3（a）所示：</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/093133352.png" width="396" height="81" alt="" /></p> <p>这种“晶格巧合”与“准对称性”叠加，使β-Ga2O3中存在两种特殊“孪晶核心”，如图3（b）和（c）所示。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/093110132.png" width="668" height="219" alt="" /></p> <p style="text-align: center;">【图3】（a）β-Ga2O3的特殊“晶格巧合”；（b）β-Ga2O3中的A型孪晶核心；（c）β-Ga2O3中的B型孪晶核心</p> <p>图3（b）和（c）中的“孪晶核心”的三维拓展，构成了图4中的一系列的孪晶界面结构。微观上，它们可被视为由“孪晶核心”串成的孪晶链；而宏观上，这些界面结构表现为由不同晶面构成的孪晶。例如，图4（b）中的界面结构，宏观上就表现为β-Ga2O3的（002）面与（20-2）面产生了孪晶！在此，我们将其命名为“共格非对称孪晶界”（Coherent Asymmetric Grain Boundaries，CAGBs）。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/093158202.png" width="668" height="463" alt="" /></p> <p style="text-align: center;">【图4】（a）-（f）由孪晶核心拓展成的三位共格非对称孪晶；（g）共格非对称孪晶在宏观上表现为由两个不同的晶面组成的孪晶界；（f）构成共格非对称孪晶的晶面的表面能</p> <p>共格非对称孪晶界在β-Ga2O3的单晶生长与外延中扮演着不可忽视的角色。如图5所示，在采用直拉法生长2英寸β-Ga2O3单晶时，我们观察到了共格非对称孪晶的结构，并通过图5（e）中的HAADF-STEM以及第一性原理计算，明确了图4（b）为最稳定的β-Ga2O3共格非对称孪晶结构。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/093220862.png" width="668" height="407" alt="" /></p> <p>【图5】采用直拉法生长的2英寸β-Ga2O3单晶中的共格非对称孪晶，采用（a）偏光应力仪；（b）光学显微镜；（c）TEM；（d）STEM与（e）HAADF-STEM观察的共格非对称孪晶的结构。</p> <p>我们以β-Ga2O3（100）面衬底的台阶流外延为例，说明共格非对称孪晶对β-Ga2O3外延的重要作用。大量研究表明，β-Ga2O3（100）面可以通过斜切的方式实现台阶流生长，以提升外延质量。然而，斜切方向对外延质量的决定性作用的原理，依然悬而未解（APL Mater. 7 022515 (2019)）。在此，我们需要强调共格非对称孪晶界的关键作用。如图6（a）所示，（100）面衬底沿着[001]斜切暴露出(001)面的台阶面，沿着[00-1]斜切暴露出(-201)的台阶面。在沿着[001]斜切暴露出的（001）台阶面处，因共格非对称孪晶的存在，会形成一种孪晶缺陷，它的能量密度是3.11J/m2，甚至低于无孪晶缺陷的能量密度3.26J/m2——这意味着在外延过程中，孪晶会自发形成！然而，在沿着[00-1]斜切的（100）衬底上，（-201）台阶面抑制了相关孪晶缺陷的形成。因此，为了提高外延的质量，合理选择β-Ga2O3衬底的方向，是至关重要的。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202502/11/093240842.png" width="668" height="238" alt="" /></p> <p>【图6】（a）β-Ga2O3（100）衬底沿[001]方向斜切暴露出（001）台阶面，沿[00-1]方向斜切暴露出(-201)台阶面。（b）在（001）台阶面上，由共格非对称孪晶导致的台阶处的孪晶缺陷，其能量低于无缺陷的台阶。</p> <p>Part.02总结</p> <p>在这项开创性的研究成果中，镓仁半导体联合浙江大学研究团队首次提出了“准对称性”与“晶格巧合”的理论，并通过深入解析孪晶界的物理机制，成功攻克了长期困扰行业的晶体缺陷难题，并实现了2英寸(010)面无孪晶β-Ga2O3衬底的量产，（新进展︱杭州镓仁半导体实现直拉法2英寸N型氧化镓单晶生长）标志着我国在宽禁带半导体领域的科学与工程实力迈上新台阶。展望未来，镓仁半导体将持续致力于推动国家宽禁带半导体产业发展，深耕氧化镓领域科技创新，为客户提供高性价比的优质氧化镓产品，争做行业技术引领者。详细内容，请阅读原文（DOI：10.1021/acs.cgd.4c01504）</p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=17975');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=17975"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> <a href="http://www.casmita.com/news/search.php?kw="></a><a href="http://www.casmita.com/news/index.php?catid=5"></a> <div class="bui-box single-mode"> <div class="single-mode-rbox"> <div class="single-mode-rbox-inner"> <div 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