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optoelectronic property</title> <meta name="description" content="Search results for: optoelectronic property"> <meta name="keywords" content="optoelectronic property"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="optoelectronic property"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 1666</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: optoelectronic property</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1666</span> Silicon Nanostructure Based on Metal-Nanoparticle-Assisted Chemical Etching for Photovoltaic Application </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouktif">B. Bouktif</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Gaidi"> M. Gaidi</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Benrabha"> M. Benrabha</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=semiconductor%20nanostructure" title="semiconductor nanostructure">semiconductor nanostructure</a>, <a href="https://publications.waset.org/abstracts/search?q=chemical%20etching" title=" chemical etching"> chemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20property" title=" optoelectronic property"> optoelectronic property</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20surface" title=" silicon surface"> silicon surface</a> </p> <a href="https://publications.waset.org/abstracts/19048/silicon-nanostructure-based-on-metal-nanoparticle-assisted-chemical-etching-for-photovoltaic-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19048.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">388</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1665</span> Characteristics of GaAs/InGaP and AlGaAs/GaAs/InAlGaP Npn Heterostructural Optoelectronic Switches</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Der-Feng%20Guo">Der-Feng Guo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Optoelectronic switches have attracted a considerable attention in the semiconductor research field due to their potential applications in optical computing systems and optoelectronic integrated circuits (OEICs). With high gains and high-speed operations, npn heterostructures can be used to produce promising optoelectronic switches. It is known that the bulk barrier and heterostructure-induced potential spike act important roles in the characteristics of the npn heterostructures. To investigate the effects of bulk barrier and potential spike heights on the optoelectronic switching of the npn heterostructures, GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated in this work. It is seen that the illumination decreases the switching voltage Vs and increases the switching current Is, and thus the OFF state is under dark and ON state under illumination in the optical switching of the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS characteristics, the Vs and Is present contrary trends, and the OFF state is under illumination and ON state under dark. The studied HSOSs show quite different switching variations with incident light, which are mainly attributed to the bulk barrier and potential spike heights affected by photogenerated carriers. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bulk%20barrier" title="bulk barrier">bulk barrier</a>, <a href="https://publications.waset.org/abstracts/search?q=heterostructure" title=" heterostructure"> heterostructure</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20switch" title=" optoelectronic switch"> optoelectronic switch</a>, <a href="https://publications.waset.org/abstracts/search?q=potential%20spike" title=" potential spike"> potential spike</a> </p> <a href="https://publications.waset.org/abstracts/56272/characteristics-of-gaasingap-and-algaasgaasinalgap-npn-heterostructural-optoelectronic-switches" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56272.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">238</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1664</span> Hafnium Doped Zno Nanostructures: An Eco-Friendly Synthesis for Optoelectronic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Achehboune">Mohamed Achehboune</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohammed%20Khenfouch"> Mohammed Khenfouch</a>, <a href="https://publications.waset.org/abstracts/search?q=Issam%20Boukhoubza"> Issam Boukhoubza</a>, <a href="https://publications.waset.org/abstracts/search?q=Bakang%20Mothudi"> Bakang Mothudi</a>, <a href="https://publications.waset.org/abstracts/search?q=Izeddine%20Zorkani"> Izeddine Zorkani</a>, <a href="https://publications.waset.org/abstracts/search?q=Anouar%20Jorio"> Anouar Jorio</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Zinc Oxide (ZnO) nanostructures have been attracting growing interest in recent years; their optical and electrical properties make them useful as attractive and promising materials for optoelectronic applications. In this study, pure and Hafnium doped ZnO nanostructures were synthesized using a green processing method. The structural, optical and electrical properties of samples were investigated structural and optical spectroscopies and electrical measurements. The synthesis and chemical composition of pure and Hafnium doped ZnO were confirmed by SEM observation. The XRD studies of Hafnium doped ZnO demonstrate the formation of wurtzite structure with preferred c-axis orientation. Moreover, the optical and electrical properties of doped material have improved after the doping process. The experimental results obtained for our material show that Hf doped ZnO nanostructures could be a promising material in optoelectronic applications such as photovoltaic cell and light emitting diode devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=green%20synthesis" title="green synthesis">green synthesis</a>, <a href="https://publications.waset.org/abstracts/search?q=hafnium-doped-zinc%20oxide" title=" hafnium-doped-zinc oxide"> hafnium-doped-zinc oxide</a>, <a href="https://publications.waset.org/abstracts/search?q=nanostructures" title=" nanostructures"> nanostructures</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic" title=" optoelectronic"> optoelectronic</a> </p> <a href="https://publications.waset.org/abstracts/80753/hafnium-doped-zno-nanostructures-an-eco-friendly-synthesis-for-optoelectronic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80753.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">269</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1663</span> Microwave Assisted Growth of Varied Phases and Morphologies of Vanadium Oxides Nanostructures: Structural and Optoelectronic Properties</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Issam%20Derkaoui">Issam Derkaoui</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohammed%20Khenfouch"> Mohammed Khenfouch</a>, <a href="https://publications.waset.org/abstracts/search?q=Bakang%20M.%20Mothudi"> Bakang M. Mothudi</a>, <a href="https://publications.waset.org/abstracts/search?q=Malik%20Maaza"> Malik Maaza</a>, <a href="https://publications.waset.org/abstracts/search?q=Izeddine%20Zorkani"> Izeddine Zorkani</a>, <a href="https://publications.waset.org/abstracts/search?q=Anouar%20%20Jorio"> Anouar Jorio</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Transition metal oxides nanoparticles with different morphologies have attracted a lot of attention recently owning to their distinctive geometries, and demonstrated promising electrical properties for various applications. In this paper, we discuss the time and annealing effects on the structural and electrical properties of vanadium oxides nanoparticles (VO-NPs) prepared by microwave method. In this sense, transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman Spectroscopy, Ultraviolet-visible absorbance spectra (Uv-Vis) and electrical conductivity were investigated. Hence, the annealing state and the time are two crucial parameters for the improvement of the optoelectronic properties. The use of these nanostructures is promising way for the development of technological applications especially for energy storage devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Vanadium%20oxide" title="Vanadium oxide">Vanadium oxide</a>, <a href="https://publications.waset.org/abstracts/search?q=Microwave" title=" Microwave"> Microwave</a>, <a href="https://publications.waset.org/abstracts/search?q=Electrical%20conductivity" title=" Electrical conductivity"> Electrical conductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=Optoelectronic%20properties" title=" Optoelectronic properties"> Optoelectronic properties</a> </p> <a href="https://publications.waset.org/abstracts/80672/microwave-assisted-growth-of-varied-phases-and-morphologies-of-vanadium-oxides-nanostructures-structural-and-optoelectronic-properties" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80672.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">195</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1662</span> Reform of the Law Relating to Personal Property Security</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ji%20Lian%20Yap">Ji Lian Yap</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper will critically consider developments in 2014 in relation to the law relating to security over personal property in Hong Kong. The rules governing the registration of charges under the Hong Kong Companies Ordinance will be examined. Case law relating to personal property security will also be discussed. The transplantation of the floating charge into China’s Property Law will also be considered. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=personal%20property" title="personal property">personal property</a>, <a href="https://publications.waset.org/abstracts/search?q=security%20law" title=" security law"> security law</a>, <a href="https://publications.waset.org/abstracts/search?q=reform%20of%20the%20law" title=" reform of the law"> reform of the law</a>, <a href="https://publications.waset.org/abstracts/search?q=law" title=" law"> law</a> </p> <a href="https://publications.waset.org/abstracts/19040/reform-of-the-law-relating-to-personal-property-security" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19040.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">425</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1661</span> Physical Properties of New Perovskite Kgex3 (X = F, Cl and Br) for Photovoltaic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouadjemia">B. Bouadjemia</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Houaria"> M. Houaria</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Haida"> S. Haida</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.%20B.%20Idriss"> Y. B. Idriss</a>, <a href="https://publications.waset.org/abstracts/search?q=A"> A</a>, <a href="https://publications.waset.org/abstracts/search?q=Akham"> Akham</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Matouguia"> M. Matouguia</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Gasmia"> A. Gasmia</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20Lantria"> T. Lantria</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Bentataa"> S. Bentataa</a> </p> <p class="card-text"><strong>Abstract:</strong></p> It have investigated the structural, optoelectronic, elastic and thermodynamic properties of KGeX₃ (X = F, Cl and Br) using the density functional theory (DFT) with generalized gradient approximation (GGA) for potential exchange correlation. The modified Becke-Johnson (mBJ-GGA) potential approximation is also used for calculating the optoelectronic properties of the material.The results show that the band structure of the metalloid halide perovskites KGeX₃ (X = F, Cl and Br) have a semiconductor behavior with direct band gap at R-R direction, the gap energy values for each compound as following: 2.83, 1.27 and 0.79eV respectively. The optical properties, such as real and imaginary parts of the dielectric functions, refractive index, reflectivity and absorption coefficient, are investigated. As results, these compounds are competent candidates for optoelectronic and photovoltaic devices in this range of the energy spectrum. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=density%20functional%20theory%20%28DFT%29" title="density functional theory (DFT)">density functional theory (DFT)</a>, <a href="https://publications.waset.org/abstracts/search?q=semiconductor%20behavior" title=" semiconductor behavior"> semiconductor behavior</a>, <a href="https://publications.waset.org/abstracts/search?q=metalloid%20halide%20perovskites" title=" metalloid halide perovskites"> metalloid halide perovskites</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20propertie%20and%20photovoltaic%20devices" title=" optical propertie and photovoltaic devices"> optical propertie and photovoltaic devices</a> </p> <a href="https://publications.waset.org/abstracts/174943/physical-properties-of-new-perovskite-kgex3-x-f-cl-and-br-for-photovoltaic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/174943.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">61</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1660</span> Indium-Gallium-Zinc Oxide Photosynaptic Device with Alkylated Graphene Oxide for Optoelectronic Spike Processing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Seyong%20Oh">Seyong Oh</a>, <a href="https://publications.waset.org/abstracts/search?q=Jin-Hong%20Park"> Jin-Hong Park</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recently, neuromorphic computing based on brain-inspired artificial neural networks (ANNs) has attracted huge amount of research interests due to the technological abilities to facilitate massively parallel, low-energy consuming, and event-driven computing. In particular, research on artificial synapse that imitate biological synapses responsible for human information processing and memory is in the spotlight. Here, we demonstrate a photosynaptic device, wherein a synaptic weight is governed by a mixed spike consisting of voltage and light spikes. Compared to the device operated only by the voltage spike, ∆G in the proposed photosynaptic device significantly increased from -2.32nS to 5.95nS with no degradation of nonlinearity (NL) (potentiation/depression values were changed from 4.24/8 to 5/8). Furthermore, the Modified National Institute of Standards and Technology (MNIST) digit pattern recognition rates improved from 36% and 49% to 50% and 62% in ANNs consisting of the synaptic devices with 20 and 100 weight states, respectively. We expect that the photosynaptic device technology processed by optoelectronic spike will play an important role in implementing the neuromorphic computing systems in the future. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20synapse" title="optoelectronic synapse">optoelectronic synapse</a>, <a href="https://publications.waset.org/abstracts/search?q=IGZO%20%28Indium-Gallium-Zinc%20Oxide%29%20photosynaptic%20device" title=" IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device"> IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20spiking%20process" title=" optoelectronic spiking process"> optoelectronic spiking process</a>, <a href="https://publications.waset.org/abstracts/search?q=neuromorphic%20computing" title=" neuromorphic computing"> neuromorphic computing</a> </p> <a href="https://publications.waset.org/abstracts/93884/indium-gallium-zinc-oxide-photosynaptic-device-with-alkylated-graphene-oxide-for-optoelectronic-spike-processing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/93884.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">173</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1659</span> Automatic Vertical Wicking Tester Based on Optoelectronic Techniques</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chi-Wai%20Kan">Chi-Wai Kan</a>, <a href="https://publications.waset.org/abstracts/search?q=Kam-Hong%20Chau"> Kam-Hong Chau</a>, <a href="https://publications.waset.org/abstracts/search?q=Ho-Shing%20Law"> Ho-Shing Law</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Wicking property is important for textile finishing and wears comfort. Good wicking properties can ensure uniformity and efficiency of the textiles treatment. In view of wear comfort, quick wicking fabrics facilitate the evaporation of sweat. Therefore, the wetness sensation of the skin is minimised to prevent discomfort. The testing method for vertical wicking was standardised by the American Association of Textile Chemists and Colorists (AATCC) in 2011. The traditional vertical wicking test involves human error to observe fast changing and/or unclear wicking height. This study introduces optoelectronic devices to achieve an automatic Vertical Wicking Tester (VWT) and reduce human error. The VWT can record the wicking time and wicking height of samples. By reducing the difficulties of manual judgment, the reliability of the vertical wicking experiment is highly increased. Furthermore, labour is greatly decreased by using the VWT. The automatic measurement of the VWT has optoelectronic devices to trace the liquid wicking with a simple operation procedure. The optoelectronic devices detect the colour difference between dry and wet samples. This allows high sensitivity to a difference in irradiance down to 10 μW/cm². Therefore, the VWT is capable of testing dark fabric. The VWT gives a wicking distance (wicking height) of 1 mm resolution and a wicking time of one-second resolution. Acknowledgment: This is a research project of HKRITA funded by Innovation and Technology Fund (ITF) with title “Development of an Automatic Measuring System for Vertical Wicking” (ITP/055/20TP). Author would like to thank the financial support by ITF. Any opinions, findings, conclusions or recommendations expressed in this material/event (or by members of the project team) do not reflect the views of the Government of the Hong Kong Special Administrative Region, the Innovation and Technology Commission or the Panel of Assessors for the Innovation and Technology Support Programme of the Innovation and Technology Fund and the Hong Kong Research Institute of Textiles and Apparel. Also, we would like to thank the support and sponsorship from Lai Tak Enterprises Limited, Kingis Development Limited and Wing Yue Textile Company Limited. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=AATCC%20method" title="AATCC method">AATCC method</a>, <a href="https://publications.waset.org/abstracts/search?q=comfort" title=" comfort"> comfort</a>, <a href="https://publications.waset.org/abstracts/search?q=textile%20measurement" title=" textile measurement"> textile measurement</a>, <a href="https://publications.waset.org/abstracts/search?q=wetness%20sensation" title=" wetness sensation"> wetness sensation</a> </p> <a href="https://publications.waset.org/abstracts/158895/automatic-vertical-wicking-tester-based-on-optoelectronic-techniques" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/158895.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">101</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1658</span> Examining the Relationship Between Traditional Property Rights and Online Intellectual Property Rights in the Digital Age</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Luljeta%20Plakolli-Kasumi">Luljeta Plakolli-Kasumi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the digital age, the relationship between traditional property rights and online intellectual property rights is becoming increasingly complex. On the one hand, the internet and advancements in technology have allowed for the widespread distribution and use of digital content, making it easier for individuals and businesses to access and share information. On the other hand, the rise of digital piracy and illegal file-sharing has led to increased concerns about the protection of intellectual property rights. This paper aims to examine the relationship between traditional property rights and online intellectual property rights in the digital age by analyzing the current legal frameworks, key challenges and controversies that arise, and potential solutions for addressing these issues. The paper will look at how traditional property rights concepts such as ownership and possession are being applied in the online context and how they intersect with new and evolving forms of intellectual property such as digital downloads, streaming services, and online content creation. It will also discuss the tension between the need for strong intellectual property protection to encourage creativity and innovation and the public interest in promoting access to information and knowledge. Ultimately, the paper will explore how the legal system can adapt to better balance the interests of property owners, creators, and users in the digital age. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=intellectual%20property" title="intellectual property">intellectual property</a>, <a href="https://publications.waset.org/abstracts/search?q=traditional%20property" title=" traditional property"> traditional property</a>, <a href="https://publications.waset.org/abstracts/search?q=digital%20age" title=" digital age"> digital age</a>, <a href="https://publications.waset.org/abstracts/search?q=digital%20content" title=" digital content"> digital content</a> </p> <a href="https://publications.waset.org/abstracts/161600/examining-the-relationship-between-traditional-property-rights-and-online-intellectual-property-rights-in-the-digital-age" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/161600.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">91</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1657</span> Approximation Property Pass to Free Product</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kankeyanathan%20Kannan">Kankeyanathan Kannan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> On approximation properties of group C* algebras is everywhere; it is powerful, important, backbone of countless breakthroughs. For a discrete group G, let A(G) denote its Fourier algebra, and let M₀A(G) denote the space of completely bounded Fourier multipliers on G. An approximate identity on G is a sequence (Φn) of finitely supported functions such that (Φn) uniformly converge to constant function 1 In this paper we prove that approximation property pass to free product. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=approximation%20property" title="approximation property">approximation property</a>, <a href="https://publications.waset.org/abstracts/search?q=weakly%20amenable" title=" weakly amenable"> weakly amenable</a>, <a href="https://publications.waset.org/abstracts/search?q=strong%20invariant%20approximation%20property" title=" strong invariant approximation property"> strong invariant approximation property</a>, <a href="https://publications.waset.org/abstracts/search?q=invariant%20approximation%20property" title=" invariant approximation property"> invariant approximation property</a> </p> <a href="https://publications.waset.org/abstracts/44414/approximation-property-pass-to-free-product" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/44414.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">675</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1656</span> Excitation Density and Energy Dependent Relaxation Dynamics of Charge Carriers in Large Area 2D TMDCs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ashish%20Soni">Ashish Soni</a>, <a href="https://publications.waset.org/abstracts/search?q=Suman%20Kalyan%20Pal"> Suman Kalyan Pal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Transition metal dichalcogenides (TMDCs) are an emerging paradigm for the generation of advanced materials which are capable of utilizing in future device applications. In recent years TMDCs have attracted researchers for their unique band structure in monolayers. Large-area monolayers could become the most appropriate candidate for flexible and thin optoelectronic devices. For this purpose, it is crucial to understand the generation and transport of charge carriers in low dimensions. A deep understanding of photo-generated hot charges and trapped charges is essential to improve the performance of optoelectronic devices. Carrier trapping by the defect states that are introduced during the growth process of the monolayer could influence the dynamical behaviour of charge carriers. Herein, we investigated some aspects of the ultrafast evolution of the initially generated hot carriers and trapped charges in large-area monolayer WS₂ by measuring transient absorption at energies above and below the band gap energy. Our excitation density and energy-dependent measurements reveal the trapping of the initially generated charge carrier. Our results could be beneficial for the development of TMDC-based optoelectronic devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=transient%20absorption" title="transient absorption">transient absorption</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronics" title=" optoelectronics"> optoelectronics</a>, <a href="https://publications.waset.org/abstracts/search?q=2D%20materials" title=" 2D materials"> 2D materials</a>, <a href="https://publications.waset.org/abstracts/search?q=TMDCs" title=" TMDCs"> TMDCs</a>, <a href="https://publications.waset.org/abstracts/search?q=exciton" title=" exciton"> exciton</a> </p> <a href="https://publications.waset.org/abstracts/146122/excitation-density-and-energy-dependent-relaxation-dynamics-of-charge-carriers-in-large-area-2d-tmdcs" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/146122.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">68</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1655</span> Electronic, Magnetic and Optic Properties in Halide Perovskites CsPbX3 (X= F, Cl, I)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouadjemi">B. Bouadjemi</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Bentata"> S. Bentata</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20Lantri"> T. Lantri</a>, <a href="https://publications.waset.org/abstracts/search?q=Souidi%20Amel"> Souidi Amel</a>, <a href="https://publications.waset.org/abstracts/search?q=W.Bensaali"> W.Bensaali</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Zitouni"> A. Zitouni</a>, <a href="https://publications.waset.org/abstracts/search?q=Z.%20Aziz"> Z. Aziz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We performed first-principle calculations, the full-potential linearized augmented plane wave (FP-LAPW) method is used to calculate structural, optoelectronic and magnetic properties of cubic halide perovskites CsPbX3 (X= F,I). We employed for this study the GGA approach and for exchange is modeled using the modified Becke-Johnson (mBJ) potential to predicting the accurate band gap of these materials. The optical properties (namely: the real and imaginary parts of dielectric functions, optical conductivities and absorption coefficient absorption make this halide perovskites promising materials for solar cells applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=halide%20perovskites" title="halide perovskites">halide perovskites</a>, <a href="https://publications.waset.org/abstracts/search?q=mBJ" title=" mBJ"> mBJ</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title=" solar cells"> solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=FP-LAPW" title=" FP-LAPW"> FP-LAPW</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20properties" title=" optoelectronic properties"> optoelectronic properties</a>, <a href="https://publications.waset.org/abstracts/search?q=absorption%20coefficient" title=" absorption coefficient"> absorption coefficient</a> </p> <a href="https://publications.waset.org/abstracts/46567/electronic-magnetic-and-optic-properties-in-halide-perovskites-cspbx3-x-f-cl-i" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/46567.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">322</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1654</span> Computational Study on the Crystal Structure, Electronic and Optical Properties of Perovskites a2bx6 for Photovoltaic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Harmel%20Meriem">Harmel Meriem</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The optoelectronic properties and high power conversion efficiency make lead halide perovskites ideal material for solar cell applications. However, the toxic nature of lead and the instability of organic cation are the two key challenges in the emerging perovskite solar cells. To overcome these challenges, we present our study about finding potential alternatives to lead in the form of A2BX6 perovskite using the first principles DFT-based calculations. The highly accurate modified Becke Johnson (mBJ) and hybrid functional (HSE06) have been used to investigate the Main Document Click here to view linked References to optoelectronic and thermoelectric properties of A2PdBr6 (A = K, Rb, and Cs) perovskite. The results indicate that different A-cations in A2PdBr6 can significantly alter their electronic and optical properties. Calculated band structures indicate semiconducting nature, with band gap values of 1.84, 1.53, and 1.54 eV for K2PdBr6, Rb2PdBr6, and Cs2PdBr6, respectively. We find strong optical absorption in the visible region with small effective masses for A2PdBr6. The ideal band gap and optimum light absorption suggest Rb2PdBr6 and Cs2PdBr6 potential candidates for the light absorption layer in perovskite solar cells. Additionally. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=soler%20cell" title="soler cell">soler cell</a>, <a href="https://publications.waset.org/abstracts/search?q=double%20perovskite" title="double perovskite">double perovskite</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20properties" title=" optoelectronic properties"> optoelectronic properties</a>, <a href="https://publications.waset.org/abstracts/search?q=ab-inotio%20study" title=" ab-inotio study"> ab-inotio study</a> </p> <a href="https://publications.waset.org/abstracts/149815/computational-study-on-the-crystal-structure-electronic-and-optical-properties-of-perovskites-a2bx6-for-photovoltaic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/149815.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">128</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1653</span> Optoelectronic Hardware Architecture for Recurrent Learning Algorithm in Image Processing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdullah%20Bal">Abdullah Bal</a>, <a href="https://publications.waset.org/abstracts/search?q=Sevdenur%20Bal"> Sevdenur Bal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper purposes a new type of hardware application for training of cellular neural networks (CNN) using optical joint transform correlation (JTC) architecture for image feature extraction. CNNs require much more computation during the training stage compare to test process. Since optoelectronic hardware applications offer possibility of parallel high speed processing capability for 2D data processing applications, CNN training algorithm can be realized using Fourier optics technique. JTC employs lens and CCD cameras with laser beam that realize 2D matrix multiplication and summation in the light speed. Therefore, in the each iteration of training, JTC carries more computation burden inherently and the rest of mathematical computation realized digitally. The bipolar data is encoded by phase and summation of correlation operations is realized using multi-object input joint images. Overlapping properties of JTC are then utilized for summation of two cross-correlations which provide less computation possibility for training stage. Phase-only JTC does not require data rearrangement, electronic pre-calculation and strict system alignment. The proposed system can be incorporated simultaneously with various optical image processing or optical pattern recognition techniques just in the same optical system. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CNN%20training" title="CNN training">CNN training</a>, <a href="https://publications.waset.org/abstracts/search?q=image%20processing" title=" image processing"> image processing</a>, <a href="https://publications.waset.org/abstracts/search?q=joint%20transform%20correlation" title=" joint transform correlation"> joint transform correlation</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20hardware" title=" optoelectronic hardware"> optoelectronic hardware</a> </p> <a href="https://publications.waset.org/abstracts/35981/optoelectronic-hardware-architecture-for-recurrent-learning-algorithm-in-image-processing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/35981.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">506</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1652</span> Tunable in Phase, out of Phase and T/4 Square-Wave Pulses in Delay-Coupled Optoelectronic Oscillators</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jade%20Mart%C3%ADnez-Llin%C3%A0s">Jade Martínez-Llinàs</a>, <a href="https://publications.waset.org/abstracts/search?q=Pere%20Colet"> Pere Colet</a> </p> <p class="card-text"><strong>Abstract:</strong></p> By exploring the possible dynamical regimes in a prototypical model for mutually delay-coupled OEOs, here it is shown that two mutually coupled non-identical OEOs, besides in- and out-of-phase square-waves, can generate stable square-wave pulses synchronized at a quarter of the period (T/4) in a broad parameter region. The key point to obtain T/4 solutions is that the two OEO operate with mixed feedback, namely with negative feedback in one and positive in the other. Furthermore, the coexistence of multiple solutions provides a large degree of flexibility for tuning the frequency in the GHz range without changing any parameter. As a result the two coupled OEOs system is good candidate to be implemented for information encoding as a high-capacity memory device. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonlinear%20optics" title="nonlinear optics">nonlinear optics</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20oscillators" title=" optoelectronic oscillators"> optoelectronic oscillators</a>, <a href="https://publications.waset.org/abstracts/search?q=square%20waves" title=" square waves"> square waves</a>, <a href="https://publications.waset.org/abstracts/search?q=synchronization" title=" synchronization"> synchronization</a> </p> <a href="https://publications.waset.org/abstracts/39791/tunable-in-phase-out-of-phase-and-t4-square-wave-pulses-in-delay-coupled-optoelectronic-oscillators" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/39791.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">370</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1651</span> Modalmetric Fiber Sensor and Its Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Zyczkowski">M. Zyczkowski</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20Markowski"> P. Markowski</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Karol"> M. Karol</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The team from IOE MUT is developing fiber optic sensors for the security systems for 15 years. The conclusions of the work indicate that these sensors are complicated. Moreover, these sensors are expensive to produce and require sophisticated signal processing methods.We present the results of the investigations of three different applications of the modalmetric sensor: • Protection of museum collections and heritage buildings, • Protection of fiber optic transmission lines, • Protection of objects of critical infrastructure. Each of the presented applications involves different requirements for the system. The results indicate that it is possible to developed a fiber optic sensor based on a single fiber. Modification of optoelectronic parts with a change of the length of the sensor and the method of reflections of propagating light at the end of the sensor allows to adjust the system to the specific application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=modalmetric%20fiber%20optic%20sensor" title="modalmetric fiber optic sensor">modalmetric fiber optic sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=security%20sensor" title=" security sensor"> security sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20parts" title=" optoelectronic parts"> optoelectronic parts</a>, <a href="https://publications.waset.org/abstracts/search?q=signal%20processing" title=" signal processing"> signal processing</a> </p> <a href="https://publications.waset.org/abstracts/9235/modalmetric-fiber-sensor-and-its-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9235.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">619</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1650</span> Technology Assessment: Exploring Possibilities to Encounter Problems Faced by Intellectual Property through Blockchain</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Ismail">M. Ismail</a>, <a href="https://publications.waset.org/abstracts/search?q=E.%20Grifell-Tatj%C3%A9"> E. Grifell-Tatjé</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Paz"> A. Paz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A significant discussion on the topic of blockchain as a solution to the issues of intellectual property highlights the relevance that this topic holds. Some experts label this technology as destructive since it holds immense potential to change course of traditional practices. The extent and areas to which this technology can be of use are still being researched. This paper provides an in-depth review on the intellectual property and blockchain technology. Further it explores what makes blockchain suitable for intellectual property, the practical solutions available and the support different governments are offering. This paper further studies the framework of universities in context of its outputs and how can they be streamlined using blockchain technology. The paper concludes by discussing some limitations and future research question. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=blockchain" title="blockchain">blockchain</a>, <a href="https://publications.waset.org/abstracts/search?q=decentralization" title=" decentralization"> decentralization</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20innovation" title=" open innovation"> open innovation</a>, <a href="https://publications.waset.org/abstracts/search?q=intellectual%20property" title=" intellectual property"> intellectual property</a>, <a href="https://publications.waset.org/abstracts/search?q=patents" title=" patents"> patents</a>, <a href="https://publications.waset.org/abstracts/search?q=university-industry%20relationship" title=" university-industry relationship"> university-industry relationship</a> </p> <a href="https://publications.waset.org/abstracts/102159/technology-assessment-exploring-possibilities-to-encounter-problems-faced-by-intellectual-property-through-blockchain" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/102159.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">185</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1649</span> Electronic/Optoelectronic Property Tuning in Two-Dimensional Transition Metal Dichalcogenides via High Pressure</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Juan%20Xia">Juan Xia</a>, <a href="https://publications.waset.org/abstracts/search?q=Jiaxu%20Yan"> Jiaxu Yan</a>, <a href="https://publications.waset.org/abstracts/search?q=Ze%20Xiang%20Shen"> Ze Xiang Shen</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The tuneable interlayer interactions in two-dimensional (2D) transition metal dichlcogenides (TMDs) offer an exciting platform for exploring new physics and applications by material variety, thickness, stacking sequence, electromagnetic filed, and stress/strain. Compared with the five methods mentioned above, high pressure is a clean and powerful tool to induce dramatic changes in lattice parameters and physical properties for 2D TMD materials. For instance, high pressure can strengthen the van der Waals interactions along c-axis and shorten the covalent bonds in atomic plane, leading to the typical first-order structural transition (2Hc to 2Ha for MoS2), or metallization. In particular, in the case of WTe₂, its unique symmetry endows the significant anisotropy and the corresponding unexpected properties including the giant magnetoresistance, pressure-induced superconductivity and Weyl semimetal states. Upon increasing pressure, the Raman peaks for WTe₂ at ~120 cm⁻¹, are gradually red-shifted and totally suppressed above 10 GPa, attributed to the possible structural instability of orthorhombic Td phase under high pressure and phase transition to a new monoclinic T' phase with inversion symmetry. Distinct electronic structures near Fermi level between the Td and T' phases may pave a feasible way to achieve the Weyl state tuning in one material without doping. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=2D%20TMDs" title="2D TMDs">2D TMDs</a>, <a href="https://publications.waset.org/abstracts/search?q=electronic%20property" title=" electronic property"> electronic property</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20pressure" title=" high pressure"> high pressure</a>, <a href="https://publications.waset.org/abstracts/search?q=first-principles%20calculations" title=" first-principles calculations"> first-principles calculations</a> </p> <a href="https://publications.waset.org/abstracts/76856/electronicoptoelectronic-property-tuning-in-two-dimensional-transition-metal-dichalcogenides-via-high-pressure" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/76856.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">231</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1648</span> The Importance of Intellectual Property for Universities of Technology in South Africa: Challenges Faced and Proposed Way Forward</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Martha%20E.%20Ikome">Martha E. Ikome</a>, <a href="https://publications.waset.org/abstracts/search?q=John%20M.%20Ikome"> John M. Ikome</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Intellectual property should be a day-to-day business decision due to its value, but increasingly, a number of institution are still not aware of the importance. Intellectual Property (IP) and its value are often not adequately appreciated. In the increasingly knowledge-driven economy, IP is a key consideration in day-to-day business decisions because new ideas and products appear almost daily in the market, which results in continuous innovation and research. Therefore, this paper will focus on the importance of IP for universities of technology and also further demonstrates how IP can become an economic tool and the challenges faced by these universities in implementing an IP system. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=intellectual%20property" title="intellectual property">intellectual property</a>, <a href="https://publications.waset.org/abstracts/search?q=institutions" title=" institutions"> institutions</a>, <a href="https://publications.waset.org/abstracts/search?q=challenges" title=" challenges"> challenges</a>, <a href="https://publications.waset.org/abstracts/search?q=protection" title=" protection"> protection</a> </p> <a href="https://publications.waset.org/abstracts/63722/the-importance-of-intellectual-property-for-universities-of-technology-in-south-africa-challenges-faced-and-proposed-way-forward" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/63722.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">374</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1647</span> Tunable Optoelectronic Properties of WS₂ by Local Strain Engineering and Folding</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ahmed%20Raza%20Khan">Ahmed Raza Khan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Local-strain engineering is an exciting approach to tune the optoelectronic properties of materials and enhance the performance of devices. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDCs) are particularly well-suited for this purpose because they have high flexibility and can withstand high deformations before rupture. Wrinkles on thick TMDC layers have been reported to show the interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDCs have not been investigated, because the wrinkles can easily fall down to form folds in these ultrathin layers of TMDCs. Here, we have achieved both wrinkle and fold nano-structures simultaneously on 1-3L WS₂ using a new fabrication technique. The comparable layer dependent reduction in surface potential is observed for both folded layers and corresponding perfect pack layers due to the dominant interlayer screening effect. The strains produced from the wrinkle nanostructures considerably vary semi conductive junction properties. Thermo-ionic modelling suggests that the strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. The photo-generated carriers would further significantly lower the SBH. These results present an important advance towards controlling the optoelectronic properties of atomically thin WS₂ using strain engineering, with important implications for practical device applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=strain%20engineering" title="strain engineering">strain engineering</a>, <a href="https://publications.waset.org/abstracts/search?q=folding" title=" folding"> folding</a>, <a href="https://publications.waset.org/abstracts/search?q=WS%E2%82%82" title=" WS₂"> WS₂</a>, <a href="https://publications.waset.org/abstracts/search?q=Kelvin%20probe%20force%20microscopy" title=" Kelvin probe force microscopy"> Kelvin probe force microscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=KPFM" title=" KPFM"> KPFM</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20potential" title=" surface potential"> surface potential</a>, <a href="https://publications.waset.org/abstracts/search?q=photo%20current" title=" photo current"> photo current</a>, <a href="https://publications.waset.org/abstracts/search?q=layer%20dependence" title=" layer dependence "> layer dependence </a> </p> <a href="https://publications.waset.org/abstracts/115991/tunable-optoelectronic-properties-of-ws2-by-local-strain-engineering-and-folding" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/115991.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">107</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1646</span> Stability of Property (gm) under Perturbation and Spectral Properties Type Weyl Theorems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20H.%20M.%20Rashid">M. H. M. Rashid</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A Banach space operator T obeys property (gm) if the isolated points of the spectrum σ(T) of T which are eigenvalues are exactly those points λ of the spectrum for which T − λI is a left Drazin invertible. In this article, we study the stability of property (gm), for a bounded operator acting on a Banach space, under perturbation by finite rank operators, by nilpotent operators, by quasi-nilpotent operators, or more generally by algebraic operators commuting with T. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Weyl%27s%20Theorem" title="Weyl's Theorem">Weyl's Theorem</a>, <a href="https://publications.waset.org/abstracts/search?q=Weyl%20Spectrum" title=" Weyl Spectrum"> Weyl Spectrum</a>, <a href="https://publications.waset.org/abstracts/search?q=Polaroid%20operators" title=" Polaroid operators"> Polaroid operators</a>, <a href="https://publications.waset.org/abstracts/search?q=property%20%28gm%29" title=" property (gm)"> property (gm)</a> </p> <a href="https://publications.waset.org/abstracts/102478/stability-of-property-gm-under-perturbation-and-spectral-properties-type-weyl-theorems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/102478.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">178</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1645</span> Controlling Excitons Complexes in Two Dimensional MoS₂ Monolayers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Arslan%20Usman">Arslan Usman</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdul%20Sattar"> Abdul Sattar</a>, <a href="https://publications.waset.org/abstracts/search?q=Hamid%20Latif"> Hamid Latif</a>, <a href="https://publications.waset.org/abstracts/search?q=Afshan%20Ashfaq"> Afshan Ashfaq</a>, <a href="https://publications.waset.org/abstracts/search?q=Muhammad%20Rafique"> Muhammad Rafique</a>, <a href="https://publications.waset.org/abstracts/search?q=Martin%20Koch"> Martin Koch</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Two-dimensional materials have promising applications in optoelectronic and photonics; MoS₂ is the pioneer 2D material in the family of transition metal dichalcogenides. Its optical, optoelectronic, and structural properties are of practical importance along with its exciton dynamics. Exciton, along with exciton complexes, plays a vital role in realizing quantum devices. MoS₂ monolayers were synthesized using chemical vapour deposition (CVD) technique on SiO₂ and hBN substrates. Photoluminescence spectroscopy (PL) was used to identify the monolayer, which also reflects the substrate based peak broadening due to screening effects. In-plane and out of plane characteristic vibrational modes E¹₂g and A₁g, respectively, were detected in a different configuration on the substrate. The B-excitons and trions showed a dominant feature at low temperatures due to electron-phonon coupling effects, whereas their energies are separated by 100 meV. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=2D%20materials" title="2D materials">2D materials</a>, <a href="https://publications.waset.org/abstracts/search?q=photoluminescence" title=" photoluminescence"> photoluminescence</a>, <a href="https://publications.waset.org/abstracts/search?q=AFM" title=" AFM"> AFM</a>, <a href="https://publications.waset.org/abstracts/search?q=excitons" title=" excitons"> excitons</a> </p> <a href="https://publications.waset.org/abstracts/114832/controlling-excitons-complexes-in-two-dimensional-mos2-monolayers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/114832.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">145</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1644</span> Structural and Optoelectronic Properties of Monovalent Cation Doping PbS Thin Films </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Melissa%20Chavez%20Portillo">Melissa Chavez Portillo</a>, <a href="https://publications.waset.org/abstracts/search?q=Hector%20Juarez%20Santiesteban"> Hector Juarez Santiesteban</a>, <a href="https://publications.waset.org/abstracts/search?q=Mauricio%20Pacio%20Castillo"> Mauricio Pacio Castillo</a>, <a href="https://publications.waset.org/abstracts/search?q=Oscar%20Portillo%20Moreno"> Oscar Portillo Moreno</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Nanocrystalline Li-doped PbS thin films have been deposited by chemical bath deposition technique. The goal of this work is to study the modification of the optoelectronic and structural properties of Lithium incorporation. The increase of Li doping in PbS thin films leads to an increase of band gap in the range of 1.4-2.3, consequently, quantum size effect becomes pronounced in the Li-doped PbS films, which lead to a significant enhancement in the optical band gap. Doping shows influence in the film growth and results in a reduction of crystallite size from 30 to 14 nm. The refractive index was calculated and a relationship with dielectric constant was investigated. The dc conductivities of Li-doped and undoped samples were measured in the temperature range 290-340K, the conductivity increase with increase of Lithium content in the PbS films. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=doping" title="doping">doping</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20confinement" title=" quantum confinement"> quantum confinement</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20band%20gap" title=" optical band gap"> optical band gap</a>, <a href="https://publications.waset.org/abstracts/search?q=PbS" title=" PbS"> PbS</a> </p> <a href="https://publications.waset.org/abstracts/58519/structural-and-optoelectronic-properties-of-monovalent-cation-doping-pbs-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/58519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">383</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1643</span> Guarding the Fortress: Intellectual Property Rights and the European Union’s Cross-Border Jurisdiction</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sara%20Vora%20%28Hoxha%29">Sara Vora (Hoxha)</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The present article delves into the intricate matters concerning Intellectual Property Rights (IPR) and cross-border jurisdiction within the confines of the European Union (EU). The prevalence of cross-border intellectual property rights (IPR) disputes has increased in tandem with the globalization of commerce and the widespread adoption of technology. The European Union (EU) is not immune to this trend. The manuscript presents a comprehensive analysis of various forms of intellectual property rights (IPR), such as patents, trademarks, and copyrights, and the regulatory framework established by the European Union (EU) to oversee these rights. The present article examines the diverse approaches employed for ascertaining the appropriate jurisdiction within the European Union (EU), and their potential application in the sphere of cross-border intellectual property rights (IPR) conflicts. The article sheds light on jurisdictional issues and outcomes of significant cross-border intellectual property rights (IPR) disputes in the European Union (EU). Additionally, the document provides suggestions for effectively managing intellectual property rights conflicts across borders within the European Union, which encompasses the utilization of alternative methods for resolving disputes. The article highlights the significance of comprehending the relevant jurisdiction in the European Union for Intellectual Property Rights (IPR). It also offers optimal approaches for enterprises and individuals who aim to safeguard their intellectual property beyond national boundaries. The primary objective of this article is to furnish a thorough comprehension of Intellectual Property Rights (IPR) and the relevant jurisdiction in the European Union (EU). Additionally, it endeavors to provide pragmatic recommendations for managing cross-border IPR conflicts in this intricate and ever-changing legal milieu. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=intellectual%20property%20rights%20%28IPR%29" title="intellectual property rights (IPR)">intellectual property rights (IPR)</a>, <a href="https://publications.waset.org/abstracts/search?q=cross-border%20jurisdiction" title=" cross-border jurisdiction"> cross-border jurisdiction</a>, <a href="https://publications.waset.org/abstracts/search?q=applicable%20laws%20and%20regulations" title=" applicable laws and regulations"> applicable laws and regulations</a>, <a href="https://publications.waset.org/abstracts/search?q=dispute%20resolution" title=" dispute resolution"> dispute resolution</a>, <a href="https://publications.waset.org/abstracts/search?q=best%20practices" title=" best practices"> best practices</a> </p> <a href="https://publications.waset.org/abstracts/165984/guarding-the-fortress-intellectual-property-rights-and-the-european-unions-cross-border-jurisdiction" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/165984.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">78</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1642</span> The Term of Intellectual Property and Artificial Intelligence</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yusuf%20Turan">Yusuf Turan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Definition of Intellectual Property Rights according to the World Intellectual Property Organization: " Intellectual property (IP) refers to creations of the mind, such as inventions; literary and artistic works; designs; and symbols, names and images used in commerce." It states as follows. There are 2 important points in the definition; we can say that it is the result of intellectual activities that occur by one or more than one PERSON and as INNOVATION. When the history and development of the relevant definitions are briefly examined, it is realized that these two points have remained constant and Intellectual Property law and rights have been shaped around these two points. With the expansion of the scope of the term Intellectual Property as a result of the development of technology, especially in the field of artificial intelligence, questions such as "Can "Artificial Intelligence" be an inventor?" need to be resolved within the expanding scope. In the past years, it was ruled that the artificial intelligence named DABUS seen in the USA did not meet the definition of "individual" and therefore would be an inventor/inventor. With the developing technology, it is obvious that we will encounter such situations much more frequently in the field of intellectual property. While expanding the scope, we should definitely determine the boundaries of how we should decide who performs the mental activity or creativity that we call indispensable on the inventor/inventor according to these problems. As a result of all these problems and innovative situations, it is clearly realized that not only Intellectual Property Law and Rights but also their definitions need to be updated and improved. Ignoring the situations that are outside the scope of the current Intellectual Property Term is not enough to solve the problem and brings uncertainty. The fact that laws and definitions that have been operating on the same theories for years exclude today's innovative technologies from the scope contradicts intellectual property, which is expressed as a new and innovative field. Today, as a result of the innovative creation of poetry, painting, animation, music and even theater works with artificial intelligence, it must be recognized that the definition of Intellectual Property must be revised. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=artificial%20intelligence" title="artificial intelligence">artificial intelligence</a>, <a href="https://publications.waset.org/abstracts/search?q=innovation" title=" innovation"> innovation</a>, <a href="https://publications.waset.org/abstracts/search?q=the%20term%20of%20intellectual%20property" title=" the term of intellectual property"> the term of intellectual property</a>, <a href="https://publications.waset.org/abstracts/search?q=right" title=" right"> right</a> </p> <a href="https://publications.waset.org/abstracts/172798/the-term-of-intellectual-property-and-artificial-intelligence" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/172798.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">70</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1641</span> Readiness of Intellectual Capital Measurement: A Review of the Property Development and Investment Industry</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Edward%20C.%20W.%20Chan">Edward C. W. Chan</a>, <a href="https://publications.waset.org/abstracts/search?q=Benny%20C.%20F.%20Cheung"> Benny C. F. Cheung</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the knowledge economy, the financial indicator is not the unique instrument to gauge the performance of a company. The role of intellectual capital contributing to the company performance is increasing. To measure the company performance due to intellectual capital, the value-added intellectual capital (VAIC) model is adopted to measure the intellectual capital utilisation efficiency of the subject companies. The purpose of this study is to review the readiness of measuring intellectual capital for the Hong Kong listed companies in the property development and property investment industry by using VAIC model. This study covers the financial reports from the representative Hong Kong listed property development companies and property investment companies in the period 2014-2019. The findings from this study indicated the industry is ready for IC measurement employing VAIC framework but not yet ready for using the extended VAIC model. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=intellectual%20capital" title="intellectual capital">intellectual capital</a>, <a href="https://publications.waset.org/abstracts/search?q=intellectual%20capital%20measurement" title=" intellectual capital measurement"> intellectual capital measurement</a>, <a href="https://publications.waset.org/abstracts/search?q=property%20development" title=" property development"> property development</a>, <a href="https://publications.waset.org/abstracts/search?q=property%20investment" title=" property investment"> property investment</a>, <a href="https://publications.waset.org/abstracts/search?q=Skandia%20navigator" title=" Skandia navigator"> Skandia navigator</a>, <a href="https://publications.waset.org/abstracts/search?q=VAIC" title=" VAIC"> VAIC</a> </p> <a href="https://publications.waset.org/abstracts/143513/readiness-of-intellectual-capital-measurement-a-review-of-the-property-development-and-investment-industry" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/143513.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">115</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1640</span> Micro-sovereignty Dynamics: Property Management and Biopolitics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sibo%20Lu">Sibo Lu</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhongkai%20Qian"> Zhongkai Qian</a>, <a href="https://publications.waset.org/abstracts/search?q=Haotian%20Zhang"> Haotian Zhang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This article examines the phenomenon of micro-sovereignty in the context of property management and its implications for biopolitics and urban governance in mainland China. It explores the transformation of urban spaces into privatized communities managed by property companies, leading to the reterritorialization of urban areas and the segmentation of urban populations. Drawing on legal frameworks, we analyze how commercial real estate development and property management have reshaped the urban landscape, placing nearly all urban residents within service areas of property management firms, thus establishing micro-sovereign entities that exercise control over residential spaces. Through a critique of property management's sovereign effects on social organization and the exploration of autonomous, democratic alternatives in community governance, this article contributes to the broader discourse on sovereignty, governance, and resistance within the urban milieu of contemporary China. It underscores the urgent need for more democratic forms of community management that can transcend the capitalist logic of property management companies and foster genuine participatory governance at the grassroots level. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=biopolitic" title="biopolitic">biopolitic</a>, <a href="https://publications.waset.org/abstracts/search?q=critical%20theory" title=" critical theory"> critical theory</a>, <a href="https://publications.waset.org/abstracts/search?q=political%20sociology" title=" political sociology"> political sociology</a>, <a href="https://publications.waset.org/abstracts/search?q=political%20philosophy" title=" political philosophy"> political philosophy</a> </p> <a href="https://publications.waset.org/abstracts/186269/micro-sovereignty-dynamics-property-management-and-biopolitics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/186269.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">47</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1639</span> A Conceptual Framework of Strategies for Managing Intellectual Property Rights at Different Stages of Product Life Cycle</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Nithyananda%20K.%20V.">Nithyananda K. V. </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Organizations follow various strategies for managing their intellectual property rights, either in the form of securing IP rights or using such IP rights through leveraging, monetizing, and commercializing them. It is well known that organizations adopt different intellectual property strategies in response to other organizations within the industry. But within an organization, and within the products that are being manufactured and sold by it, the strategies for managing its intellectual property rights keep changing at different stages of the product life cycle. Organizations could adopt not only different strategies for managing its intellectual property rights, but could also adopt different kinds of business models to leverage, monetize, and commercial the IP rights. This paper analyzes the various strategies that can be adopted by organizations to manage its IP rights at different stages of the product life cycle and the rationale for adopting such strategies. This would be a secondary research, based solely on the literature of strategic management, new product development, resource-based management, and the intellectual property management. This paper synthesizes the literature from these streams to propose a conceptual framework of strategies that can be adopted by organizations for managing its IP rights in conjunction with the life cycle of the products that it manufactures and sells in the market. This framework could be adopted by organizations in implementing strategies for effectively managing their IP rights. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=intellectual%20property%20strategy" title="intellectual property strategy">intellectual property strategy</a>, <a href="https://publications.waset.org/abstracts/search?q=management%20of%20intellectual%20property%20rights" title=" management of intellectual property rights"> management of intellectual property rights</a>, <a href="https://publications.waset.org/abstracts/search?q=New%20product%20development" title=" New product development"> New product development</a>, <a href="https://publications.waset.org/abstracts/search?q=product%20life%20cycle" title=" product life cycle"> product life cycle</a> </p> <a href="https://publications.waset.org/abstracts/87061/a-conceptual-framework-of-strategies-for-managing-intellectual-property-rights-at-different-stages-of-product-life-cycle" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/87061.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">297</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1638</span> Broadband Platinum Disulfide Based Saturable Absorber Used for Optical Fiber Mode Locking Lasers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hui%20Long">Hui Long</a>, <a href="https://publications.waset.org/abstracts/search?q=Chun%20Yin%20Tang"> Chun Yin Tang</a>, <a href="https://publications.waset.org/abstracts/search?q=Ping%20Kwong%20Cheng"> Ping Kwong Cheng</a>, <a href="https://publications.waset.org/abstracts/search?q=Xin%20Yu%20Wang"> Xin Yu Wang</a>, <a href="https://publications.waset.org/abstracts/search?q=Wayesh%20Qarony"> Wayesh Qarony</a>, <a href="https://publications.waset.org/abstracts/search?q=Yuen%20Hong%20Tsang"> Yuen Hong Tsang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Two dimensional (2D) materials have recently attained substantial research interest since the discovery of graphene. However, the zero-bandgap feature of the graphene limits its nonlinear optical applications, e.g., saturable absorption for these applications require strong light-matter interaction. Nevertheless, the excellent optoelectronic properties, such as broad tunable bandgap energy and high carrier mobility of Group 10 transition metal dichalcogenides 2D materials, e.g., PtS2 introduce new degree of freedoms in the optoelectronic applications. This work reports our recent research findings regarding the saturable absorption property of PtS2 layered 2D material and its possibility to be used as saturable absorber (SA) for ultrafast mode locking fiber laser. The demonstration of mode locking operation by using the fabricated PtS2 as SA will be discussed. The PtS2/PVA SA used in this experiment is made up of some few layered PtS2 nanosheets fabricated via a simple ultrasonic liquid exfoliation. The operational wavelength located at ~1 micron is demonstrated from Yb-doped mode locking fiber laser ring cavity by using the PtS2 SA. The fabricated PtS2 saturable absorber offers strong nonlinear properties, and it is capable of producing regular mode locking laser pulses with pulse to pulse duration matched with the round-trip cavity time. The results confirm successful mode locking operation achieved by the fabricated PtS2 material. This work opens some new opportunities for these PtS2 materials for the ultrafast laser generation. Acknowledgments: This work is financially supported by Shenzhen Science and Technology Innovation Commission (JCYJ20170303160136888) and the Research Grants Council of Hong Kong, China (GRF 152109/16E, PolyU code: B-Q52T). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=platinum%20disulfide" title="platinum disulfide">platinum disulfide</a>, <a href="https://publications.waset.org/abstracts/search?q=PtS2" title=" PtS2"> PtS2</a>, <a href="https://publications.waset.org/abstracts/search?q=saturable%20absorption" title=" saturable absorption"> saturable absorption</a>, <a href="https://publications.waset.org/abstracts/search?q=saturable%20absorber" title=" saturable absorber"> saturable absorber</a>, <a href="https://publications.waset.org/abstracts/search?q=mode%20locking%20laser" title=" mode locking laser"> mode locking laser</a> </p> <a href="https://publications.waset.org/abstracts/102303/broadband-platinum-disulfide-based-saturable-absorber-used-for-optical-fiber-mode-locking-lasers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/102303.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">188</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1637</span> Economic Neoliberalism: Property Right and Redistribution Policy </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Aleksandar%20Savanovi%C4%87">Aleksandar Savanović</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper we will analyze the relationship between the neo-liberal concept of property rights and redistribution policy. This issue is back in the focus of interest due to the crisis 2008. The crisis has reaffirmed the influence of the state on the free-market processes. The interference of the state with property relations re-opened a classical question: is it legitimate to redistribute resources of a man in favor of another man with taxes? The dominant view is that the neoliberal philosophy of natural rights is incompatible with redistributive measures. In principle, this view can be accepted. However, when we look into the details of the theory of natural rights proposed by some coryphaei of neoliberal philosophy, such as Hayek, Nozick, Buchanan and Rothbard, we can see that it is not such an unequivocal view. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=economic%20neoliberalism" title="economic neoliberalism">economic neoliberalism</a>, <a href="https://publications.waset.org/abstracts/search?q=natural%20law" title=" natural law"> natural law</a>, <a href="https://publications.waset.org/abstracts/search?q=property" title=" property"> property</a>, <a href="https://publications.waset.org/abstracts/search?q=redistribution" title=" redistribution"> redistribution</a> </p> <a href="https://publications.waset.org/abstracts/22995/economic-neoliberalism-property-right-and-redistribution-policy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22995.pdf" target="_blank" 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