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switching devices</title> <meta name="description" content="Search results for: electronic switching devices"> <meta name="keywords" content="electronic switching devices"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="electronic switching devices"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 4265</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: electronic switching devices</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4265</span> Switching Losses in Power Electronic Converter of Switched Reluctance Motor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ali%20Asghar%20Memon">Ali Asghar Memon</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A cautious and astute selection of switching devices used in power electronic converters of a switched reluctance (SR) motor is required. It is a matter of choice of best switching devices with respect to their switching ability rather than fulfilling the number of switches. This paper highlights the computational determination of switching losses comprising of switch-on, switch-off and conduction losses respectively by using experimental data in simulation model of a SR machine. The finding of this research is helpful for proper selection of electronic switches and suitable converter topology for switched reluctance motor. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=converter" title="converter">converter</a>, <a href="https://publications.waset.org/abstracts/search?q=operating%20modes" title=" operating modes"> operating modes</a>, <a href="https://publications.waset.org/abstracts/search?q=switched%20reluctance%20motor" title=" switched reluctance motor"> switched reluctance motor</a>, <a href="https://publications.waset.org/abstracts/search?q=switching%20losses" title=" switching losses"> switching losses</a> </p> <a href="https://publications.waset.org/abstracts/35250/switching-losses-in-power-electronic-converter-of-switched-reluctance-motor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/35250.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">507</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4264</span> Digital Control Techniques for Power Electronic Devices</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rakesh%20Krishna">Rakesh Krishna</a>, <a href="https://publications.waset.org/abstracts/search?q=Abhishek%20Poddar"> Abhishek Poddar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The paper discusses the work carried out on the implementation of control techniques like Digital Pulse Width Modulation (PWM) and Digital Pulse Fired control(PFC). These techniques are often used in devices like inverters, battery chargers, DC-to-DC converters can also be implemented on household devices like heaters. The advantage being the control and improved life span of device. In case of batteries using these techniques are known to increase the life span of battery in mobiles and other hand-held devices. 8051 microcontroller is used to implement these methods.Thyristors are used for switching operations. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=PWM" title="PWM">PWM</a>, <a href="https://publications.waset.org/abstracts/search?q=SVM" title=" SVM"> SVM</a>, <a href="https://publications.waset.org/abstracts/search?q=PFC" title=" PFC"> PFC</a>, <a href="https://publications.waset.org/abstracts/search?q=bidirectional%20inverters" title=" bidirectional inverters"> bidirectional inverters</a>, <a href="https://publications.waset.org/abstracts/search?q=snubber" title=" snubber"> snubber</a> </p> <a href="https://publications.waset.org/abstracts/16520/digital-control-techniques-for-power-electronic-devices" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/16520.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">572</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4263</span> Incorporation of Copper for Performance Enhancement in Metal-Oxides Resistive Switching Device and Its Potential Electronic Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Pavan%20Kumar%20Reddy">B. Pavan Kumar Reddy</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20Michael%20Preetam%20Raj"> P. Michael Preetam Raj</a>, <a href="https://publications.waset.org/abstracts/search?q=Souri%20Banerjee"> Souri Banerjee</a>, <a href="https://publications.waset.org/abstracts/search?q=Souvik%20Kundu"> Souvik Kundu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, the fabrication and characterization of copper-doped zinc oxide (Cu:ZnO) based memristor devices with aluminum (Al) and indium tin oxide (ITO) metal electrodes are reported. The thin films of Cu:ZnO was synthesized using low-cost and low-temperature chemical process. The Cu:ZnO was then deposited onto ITO bottom electrodes using spin-coater technique, whereas the top electrode Al was deposited utilizing physical vapor evaporation technique. Ellipsometer was employed in order to measure the Cu:ZnO thickness and it was found to be 50 nm. Several surface and materials characterization techniques were used to study the thin-film properties of Cu:ZnO. To ascertain the efficacy of Cu:ZnO for memristor applications, electrical characterizations such as current-voltage (I-V), data retention and endurance were obtained, all being the critical parameters for next-generation memory. The I-V characteristic exhibits switching behavior with asymmetrical hysteresis loops. This work imputes the resistance switching to the positional drift of oxygen vacancies associated with respect to the Al/Cu:ZnO junction. Further, a non-linear curve fitting regression techniques were utilized to determine the equivalent circuit for the fabricated Cu:ZnO memristors. Efforts were also devoted in order to establish its potentiality for different electronic applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=copper%20doped" title="copper doped">copper doped</a>, <a href="https://publications.waset.org/abstracts/search?q=metal-oxides" title=" metal-oxides"> metal-oxides</a>, <a href="https://publications.waset.org/abstracts/search?q=oxygen%20vacancies" title=" oxygen vacancies"> oxygen vacancies</a>, <a href="https://publications.waset.org/abstracts/search?q=resistive%20switching" title=" resistive switching"> resistive switching</a> </p> <a href="https://publications.waset.org/abstracts/89280/incorporation-of-copper-for-performance-enhancement-in-metal-oxides-resistive-switching-device-and-its-potential-electronic-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/89280.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">162</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4262</span> Effects of Voltage Pulse Characteristics on Some Performance Parameters of LiₓCoO₂-based Resistive Switching Memory Devices</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Van%20Son%20Nguyen">Van Son Nguyen</a>, <a href="https://publications.waset.org/abstracts/search?q=Van%20Huy%20Mai"> Van Huy Mai</a>, <a href="https://publications.waset.org/abstracts/search?q=Alec%20Moradpour"> Alec Moradpour</a>, <a href="https://publications.waset.org/abstracts/search?q=Pascale%20Auban%20Senzier"> Pascale Auban Senzier</a>, <a href="https://publications.waset.org/abstracts/search?q=Claude%20Pasquier"> Claude Pasquier</a>, <a href="https://publications.waset.org/abstracts/search?q=Kang%20Wang"> Kang Wang</a>, <a href="https://publications.waset.org/abstracts/search?q=Pierre-Antoine%20Albouy"> Pierre-Antoine Albouy</a>, <a href="https://publications.waset.org/abstracts/search?q=Marcelo%20J.%20Rozenberg"> Marcelo J. Rozenberg</a>, <a href="https://publications.waset.org/abstracts/search?q=John%20Giapintzakis"> John Giapintzakis</a>, <a href="https://publications.waset.org/abstracts/search?q=Christian%20N.%20Mihailescu"> Christian N. Mihailescu</a>, <a href="https://publications.waset.org/abstracts/search?q=Charis%20M.%20Orfanidou"> Charis M. Orfanidou</a>, <a href="https://publications.waset.org/abstracts/search?q=Thomas%20Maroutian"> Thomas Maroutian</a>, <a href="https://publications.waset.org/abstracts/search?q=Philippe%20Lecoeur"> Philippe Lecoeur</a>, <a href="https://publications.waset.org/abstracts/search?q=Guillaume%20Agnus"> Guillaume Agnus</a>, <a href="https://publications.waset.org/abstracts/search?q=Pascal%20Aubert"> Pascal Aubert</a>, <a href="https://publications.waset.org/abstracts/search?q=Sylvain%20Franger"> Sylvain Franger</a>, <a href="https://publications.waset.org/abstracts/search?q=Rapha%C3%ABl%20Salot"> Raphaël Salot</a>, <a href="https://publications.waset.org/abstracts/search?q=Nathalie%20Brun"> Nathalie Brun</a>, <a href="https://publications.waset.org/abstracts/search?q=Katia%20March"> Katia March</a>, <a href="https://publications.waset.org/abstracts/search?q=David%20Alamarguy"> David Alamarguy</a>, <a href="https://publications.waset.org/abstracts/search?q=Pascal%20Chr%C3%A9Tien"> Pascal ChréTien</a>, <a href="https://publications.waset.org/abstracts/search?q=Olivier%20Schneegans"> Olivier Schneegans</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the field of Nanoelectronics, a major research activity is being developed towards non-volatile memories. To face the limitations of existing Flash memory cells (endurance, downscaling, rapidity…), new approaches are emerging, among them resistive switching memories (Re-RAM). In this work, we analysed the behaviour of LixCoO2 oxide thin films in electrode/film/electrode devices. Preliminary results have been obtained concerning the influence of bias pulses characteristics (duration, value) on some performance parameters, such as endurance and resistance ratio (ROFF/RON). Besides, Conducting Probe Atomic Force Microscopy (CP-AFM) characterizations of the devices have been carried out to better understand some causes of performance failure, and thus help optimizing the switching performance of such devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=non%20volatile%20resistive%20memories" title="non volatile resistive memories">non volatile resistive memories</a>, <a href="https://publications.waset.org/abstracts/search?q=resistive%20switching" title=" resistive switching"> resistive switching</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20films" title=" thin films"> thin films</a>, <a href="https://publications.waset.org/abstracts/search?q=endurance" title=" endurance"> endurance</a> </p> <a href="https://publications.waset.org/abstracts/65064/effects-of-voltage-pulse-characteristics-on-some-performance-parameters-of-licoo2-based-resistive-switching-memory-devices" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/65064.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">611</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4261</span> Harmonic Analysis to Improve Power Quality</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rumana%20Ali">Rumana Ali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The presence of nonlinear and power electronic switching devices produce distorted output and harmonics into the system. This paper presents a technique to analyze harmonics using digital series oscilloscope (DSO). In power distribution system further measurements are done by DSO, and the waveforms are analyzed using FFT program. The results of this proposed work are helpful for the investigator to install an appropriate compensating device to mitigate the harmonics, in turn, improve the power quality. This case study is carried out at AIT Chikmagalur. It is done as a starting step towards the improvement of energy efficiency at AIT Chikmagalur, and with an overall aim of reducing the electricity bill with a complete energy audit of the institution. Strategies were put forth to reach the above objective: The following strategies were proposed to be implemented to analyze the power quality in EEE department of the institution. Strategy 1: The power factor has to be measured using the energy meter. Power factor improvement may reduce the voltage drop in lines. This brings the voltages at the socket in the labs closer to the nominal voltage of 230V, and thus power quality improves. Strategy 2: The harmonics at the power inlet has to be measured by means of a DSO. The DSO waveform is analyzed using FFT to know the percentage harmonic up to the 13th harmonics of 50Hz. Reduction in the harmonics in the inlet of the EEE department may reduce line losses and therefore reduces energy bill to the institution. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=harmonic%20analysis" title="harmonic analysis">harmonic analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20bill" title=" energy bill"> energy bill</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20quality" title=" power quality"> power quality</a>, <a href="https://publications.waset.org/abstracts/search?q=electronic%20switching%20devices" title=" electronic switching devices "> electronic switching devices </a> </p> <a href="https://publications.waset.org/abstracts/45308/harmonic-analysis-to-improve-power-quality" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45308.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">309</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4260</span> A Comprehensive Evaluation of IGBTs Performance under Zero Current Switching</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ly.%20Benbahouche">Ly. Benbahouche</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Currently, several soft switching topologies have been studied to achieve high power switching efficiency, reduced cost, improved reliability and reduced parasites. It is well known that improvement in power electronics systems always depend on advanced in power devices. The IGBT has been successfully used in a variety of switching applications such as motor drives and appliance control because of its superior characteristics. The aim of this paper is focuses on simulation and explication of the internal dynamics of IGBTs behaviour under the most popular soft switching schemas that is Zero Current Switching (ZCS) environments. The main purpose of this paper is to point out some mechanisms relating to current tail during the turn-off and examination of the response at turn-off with variation of temperature, inductance L, snubber capacitors Cs, and bus voltage in order to achieve an improved understanding of internal carrier dynamics. It is shown that the snubber capacitor, the inductance and even the temperature controls the magnitude and extent of the tail current, hence the turn-off time (switching speed of the device). Moreover, it has also been demonstrated that the ZCS switching can be utilized efficiently to improve and reduce the power losses as well as the turn-off time. Furthermore, the turn-off loss in ZCS was found to depend on the time of switching of the device. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=PT-IGBT" title="PT-IGBT">PT-IGBT</a>, <a href="https://publications.waset.org/abstracts/search?q=ZCS" title=" ZCS"> ZCS</a>, <a href="https://publications.waset.org/abstracts/search?q=turn-off%20losses" title=" turn-off losses"> turn-off losses</a>, <a href="https://publications.waset.org/abstracts/search?q=dV%2Fdt" title=" dV/dt"> dV/dt</a> </p> <a href="https://publications.waset.org/abstracts/6516/a-comprehensive-evaluation-of-igbts-performance-under-zero-current-switching" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/6516.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">316</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4259</span> Multi-Layer Mn-Doped SnO2 Thin Film for Multi-State Resistive Switching</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zhemi%20Xu">Zhemi Xu</a>, <a href="https://publications.waset.org/abstracts/search?q=Dewei%20Chu"> Dewei Chu</a>, <a href="https://publications.waset.org/abstracts/search?q=Sean%20Li"> Sean Li</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Well self-assembled pure and Mn-doped SnO2 nanocubes were synthesized by interface thermodynamic method, which is ideal for highly homogeneous large scale thin film deposition on flexible substrates for various electric devices. Mn-doped SnO2 shows very good resistive switching with high On/Off ratio (over 103), endurance and retention characteristics. More important, the resistive state can be tuned by multi-layer fabrication by alternate pure SnO2 and Mn-doped SnO2 nanocube layer, which improved the memory capacity of resistive switching effectively. Thus, such a method provides transparent, multi-level resistive switching for next generation non-volatile memory applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=metal%20oxides" title="metal oxides">metal oxides</a>, <a href="https://publications.waset.org/abstracts/search?q=self-assembly%20nanoparticles" title=" self-assembly nanoparticles"> self-assembly nanoparticles</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-level%20resistive%20switching" title=" multi-level resistive switching"> multi-level resistive switching</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-layer%20thin%20film" title=" multi-layer thin film"> multi-layer thin film</a> </p> <a href="https://publications.waset.org/abstracts/60140/multi-layer-mn-doped-sno2-thin-film-for-multi-state-resistive-switching" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/60140.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">345</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4258</span> Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chi-Yan%20Chu">Chi-Yan Chu</a>, <a href="https://publications.waset.org/abstracts/search?q=Kai-Chi%20Chuang"> Kai-Chi Chuang</a>, <a href="https://publications.waset.org/abstracts/search?q=Huang-Chung%20Cheng"> Huang-Chung Cheng</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, the RRAM devices with the TiN/Ti/HfO<sub>x</sub>/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfO<sub>x</sub>/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=RRAM" title="RRAM">RRAM</a>, <a href="https://publications.waset.org/abstracts/search?q=furnace%20annealing%20%28FA%29" title=" furnace annealing (FA)"> furnace annealing (FA)</a>, <a href="https://publications.waset.org/abstracts/search?q=forming" title=" forming"> forming</a>, <a href="https://publications.waset.org/abstracts/search?q=set%20and%20reset%20voltages" title=" set and reset voltages"> set and reset voltages</a>, <a href="https://publications.waset.org/abstracts/search?q=XPS" title=" XPS"> XPS</a> </p> <a href="https://publications.waset.org/abstracts/58560/resistive-switching-characteristics-of-resistive-random-access-memory-devices-after-furnace-annealing-processes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/58560.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">371</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4257</span> High-Frequency Full-Bridge Isolated DC-DC Converter for Fuel Cell Power Generation Systems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Nabil%20A.%20Ahmed">Nabil A. Ahmed</a> </p> <p class="card-text"><strong>Abstract:</strong></p> DC-DC converters are necessary to interface low-voltage fuel cell power generation systems to a higher voltage DC bus system. A system and method for generating a regulated output power from fuel cell power generation systems is proposed in this paper, this includes a soft-switching isolated DC-DC converter to reduce the idling and circulating currents. The system incorporates a high-frequency center tap transformer link DC-DC converter using secondary-side soft switching control. Snubber capacitors including the parasitic capacitance of the switching devices and the transformer leakage inductance are utilized to achieve zero-voltage switching (ZVS) in the primary side of the high-frequency transformer. Therefore, no extra resonant components are required for ZVS. The inherent soft-switching capability allows high power density, efficient power conversion, and compact packaging. A prototype rated at 6.5 kW is proposed and simulated. Simulation results confirmed a wide range of soft-switching operation and consequently high conversion efficiency will be achieved. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=secondary-side" title="secondary-side">secondary-side</a>, <a href="https://publications.waset.org/abstracts/search?q=phase-shift" title=" phase-shift"> phase-shift</a>, <a href="https://publications.waset.org/abstracts/search?q=high-frequency%20transformer" title=" high-frequency transformer"> high-frequency transformer</a>, <a href="https://publications.waset.org/abstracts/search?q=zero%20voltage" title=" zero voltage"> zero voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=zero%20current" title=" zero current"> zero current</a>, <a href="https://publications.waset.org/abstracts/search?q=soft%20switching%20operation" title=" soft switching operation"> soft switching operation</a>, <a href="https://publications.waset.org/abstracts/search?q=switching%20losses" title=" switching losses"> switching losses</a> </p> <a href="https://publications.waset.org/abstracts/44935/high-frequency-full-bridge-isolated-dc-dc-converter-for-fuel-cell-power-generation-systems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/44935.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">310</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4256</span> Solution-Processed Threshold Switching Selectors Based on Highly Flexible, Transparent and Scratchable Silver Nanowires Conductive Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Peiyuan%20Guan">Peiyuan Guan</a>, <a href="https://publications.waset.org/abstracts/search?q=Tao%20Wan"> Tao Wan</a>, <a href="https://publications.waset.org/abstracts/search?q=Dewei%20Chu"> Dewei Chu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> With the flash memory approaching its physical limit, the emerging resistive random-access memory (RRAM) has been considered as one of the most promising candidates for the next-generation non-volatile memory. One selector-one resistor configuration has shown the most promising way to resolve the crosstalk issue without affecting the scalability and high-density integration of the RRAM array. By comparison with other candidates of selectors (such as diodes and nonlinear devices), threshold switching selectors dominated by formation/spontaneous rupture of fragile conductive filaments have been proved to possess low voltages, high selectivity, and ultra-low current leakage. However, the flexibility and transparency of selectors are barely mentioned. Therefore, it is a matter of urgency to develop a selector with highly flexible and transparent properties to assist the application of RRAM for a diversity of memory devices. In this work, threshold switching selectors were designed using a facilely solution-processed fabrication on AgNWs@PDMS composite films, which show high flexibility, transparency and scratch resistance. As-fabricated threshold switching selectors also have revealed relatively high selectivity (~107), low operating voltages (Vth < 1 V) and good switching performance. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=flexible%20and%20transparent" title="flexible and transparent">flexible and transparent</a>, <a href="https://publications.waset.org/abstracts/search?q=resistive%20random-access%20memory" title=" resistive random-access memory"> resistive random-access memory</a>, <a href="https://publications.waset.org/abstracts/search?q=silver%20nanowires" title=" silver nanowires"> silver nanowires</a>, <a href="https://publications.waset.org/abstracts/search?q=threshold%20switching%20selector" title=" threshold switching selector"> threshold switching selector</a> </p> <a href="https://publications.waset.org/abstracts/119260/solution-processed-threshold-switching-selectors-based-on-highly-flexible-transparent-and-scratchable-silver-nanowires-conductive-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/119260.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">128</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4255</span> Fabrication of LiNbO₃ Based Conspicuous Nanomaterials for Renewable Energy Devices</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Riffat%20Kalsoom">Riffat Kalsoom</a>, <a href="https://publications.waset.org/abstracts/search?q=Qurat-Ul-Ain%20Javed"> Qurat-Ul-Ain Javed</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Optical and dielectric properties of lithium niobates have made them the fascinating materials to be used in optical industry for device formation such as Q and optical switching. Synthesis of lithium niobates was carried out by solvothermal process with and without temperature fluctuation at 200°C for 4 hrs, and behavior of properties for different durations was also examined. Prepared samples of LiNbO₃ were examined in a way as crystallographic phases by using XRD diffractometer, morphology by scanning electron microscope (SEM), absorption by UV-Visible Spectroscopy and dielectric measurement by impedance analyzer. A structural change from trigonal to spherical shape was observed by changing the time of reaction. Crystallite size decreases by the temperature fluctuation and increasing reaction time. Band gap decreases whereas dielectric constant and dielectric loss was increased with increasing time of reaction. Trend of AC conductivity is explained by Joschner’s power law. Due to these significant properties, it finds its applications in devices, such as cells, Q switching and optical switching for laser and gigahertz frequencies, respectively and these applications depend on the industrial demands. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=lithium%20niobates" title="lithium niobates">lithium niobates</a>, <a href="https://publications.waset.org/abstracts/search?q=renewable%20energy%20devices" title=" renewable energy devices"> renewable energy devices</a>, <a href="https://publications.waset.org/abstracts/search?q=controlled%20structure" title=" controlled structure"> controlled structure</a>, <a href="https://publications.waset.org/abstracts/search?q=temperature%20fluctuations" title=" temperature fluctuations"> temperature fluctuations</a> </p> <a href="https://publications.waset.org/abstracts/93681/fabrication-of-linbo3-based-conspicuous-nanomaterials-for-renewable-energy-devices" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/93681.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">131</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4254</span> Proton Irradiation Testing on Commercial Enhancement Mode GaN Power Transistor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=L.%20Boyaci">L. Boyaci</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Two basic equipment of electrical power subsystem of space satellites are Power Conditioning Unit (PCU) and Power Distribution Unit (PDU). Today, the main switching element used in power equipment in satellites is silicon (Si) based radiation-hardened MOSFET. GaNFETs have superior performances over MOSFETs in terms of their conduction and switching characteristics. GaNFET has started to take MOSFET’s place in many applications in industry especially by virtue of its switching performances. If GaNFET can also be used in equipment for space applications, this would be great revolution for future space power subsystem designs. In this study, the effect of proton irradiation on Gallium Nitride based power transistors was investigated. Four commercial enhancement mode GaN power transistors from Efficient Power Conversion Corporation (EPC) are irradiated with 30MeV protons while devices are switching. Flux of 8.2x10⁹ protons/cm²/s is applied for 12.5 seconds to reach ultimate fluence of 10¹¹ protons/cm². Vgs-Ids characteristics are measured and recorded for each device before, during and after irradiation. It was observed that if there would be destructive events. Proton induced permanent damage on devices is not observed. All the devices remained healthy and continued to operate. For two of these devices, further irradiation is applied with same flux for 30 minutes up to a total fluence level of 1.476x10¹³ protons/cm². We observed that GaNFETs are fully functional under this high level of radiation and no destructive events and irreversible failures took place for transistors. Results reveal that irradiated GaNFET in this experiment has radiation tolerance under proton testing and very important candidate for being one of the future power switching element in space. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=enhancement%20mode%20GaN%20power%20transistors" title="enhancement mode GaN power transistors">enhancement mode GaN power transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=proton%20irradiation%20effects" title=" proton irradiation effects"> proton irradiation effects</a>, <a href="https://publications.waset.org/abstracts/search?q=radiation%20tolerance" title=" radiation tolerance"> radiation tolerance</a> </p> <a href="https://publications.waset.org/abstracts/98492/proton-irradiation-testing-on-commercial-enhancement-mode-gan-power-transistor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/98492.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">152</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4253</span> Polymer in Electronic Waste: An Analysis</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Anis%20A.%20Ansari">Anis A. Ansari</a>, <a href="https://publications.waset.org/abstracts/search?q=Aftab%20A.%20Ansari"> Aftab A. Ansari</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Electronic waste is inundating the traditional solid-waste-disposal facilities, which are inadequately designed to handle and manage such type of new wastes. Since electronic waste contains mostly hazardous and even toxic materials, the seriousness of its effects on human health and the environment cannot be ignored in present scenario. Waste from the electronic industry is increasing exponentially day by day. From the last 20 years, we are continuously generating huge quantities of e-waste such as obsolete computers and other discarded electronic components, mainly due to evolution of newer technologies as a result of constant efforts in research and development in this sector. Polymers, one of the major constituents in almost every electronic waste, such as computers, printers, electronic equipment, entertainment devices, mobile phones, television sets etc., are if properly recycled can create a new business opportunity. This would not only create potential market for polymers to improve economy but also the priceless land used as dumping sites of electronic waste, can be utilized for other productive purposes. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=polymer%20recycling" title="polymer recycling">polymer recycling</a>, <a href="https://publications.waset.org/abstracts/search?q=electronic%20waste" title=" electronic waste"> electronic waste</a>, <a href="https://publications.waset.org/abstracts/search?q=hazardous%20materials" title=" hazardous materials"> hazardous materials</a>, <a href="https://publications.waset.org/abstracts/search?q=electronic%20components" title=" electronic components"> electronic components</a> </p> <a href="https://publications.waset.org/abstracts/19469/polymer-in-electronic-waste-an-analysis" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19469.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">475</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4252</span> Electronic Device Robustness against Electrostatic Discharges</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Clara%20Oliver">Clara Oliver</a>, <a href="https://publications.waset.org/abstracts/search?q=Oibar%20Martinez"> Oibar Martinez</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper is intended to reveal the severity of electrostatic discharge (ESD) effects in electronic and optoelectronic devices by performing sensitivity tests based on Human Body Model (HBM) standard. We explain here the HBM standard in detail together with the typical failure modes associated with electrostatic discharges. In addition, a prototype of electrostatic charge generator has been designed, fabricated, and verified to stress electronic devices, which features a compact high voltage source. This prototype is inexpensive and enables one to do a battery of pre-compliance tests aimed at detecting unexpected weaknesses to static discharges at the component level. Some tests with different devices were performed to illustrate the behavior of the proposed generator. A set of discharges was applied according to the HBM standard to commercially available bipolar transistors, complementary metal-oxide-semiconductor transistors and light emitting diodes. It is observed that high current and voltage ratings in electronic devices not necessarily provide a guarantee that the device will withstand high levels of electrostatic discharges. We have also compared the result obtained by performing the sensitivity tests based on HBM with a real discharge generated by a human. For this purpose, the charge accumulated in the person is monitored, and a direct discharge against the devices is generated by touching them. Every test has been performed under controlled relative humidity conditions. It is believed that this paper can be of interest for research teams involved in the development of electronic and optoelectronic devices which need to verify the reliability of their devices in terms of robustness to electrostatic discharges. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=human%20body%20model" title="human body model">human body model</a>, <a href="https://publications.waset.org/abstracts/search?q=electrostatic%20discharge" title=" electrostatic discharge"> electrostatic discharge</a>, <a href="https://publications.waset.org/abstracts/search?q=sensitivity%20tests" title=" sensitivity tests"> sensitivity tests</a>, <a href="https://publications.waset.org/abstracts/search?q=static%20charge%20monitoring" title=" static charge monitoring"> static charge monitoring</a> </p> <a href="https://publications.waset.org/abstracts/107659/electronic-device-robustness-against-electrostatic-discharges" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/107659.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">149</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4251</span> Domain Switching Characteristics of Lead Zirconate Titanate Piezoelectric Ceramic</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mitsuhiro%20Okayasu">Mitsuhiro Okayasu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> To better understand the lattice characteristics of lead zirconate titanate (PZT) ceramics, the lattice orientations and domain-switching characteristics have been directly examined during loading and unloading using various experimental techniques. Upon loading, the PZT ceramics are fractured linear and nonlinearly during the compressive loading process. The strain characteristics of the PZT ceramic were directly affected by both the lattice and domain switching strain. Due to the piezoelectric ceramic, electrical activity of lightning-like behavior occurs in the PZT ceramics, which attributed to the severe domain-switching leading to weak piezoelectric property. The characteristics of domain-switching and reverse switching are detected during the loading and unloading processes. The amount of domain-switching depends on the grain, due to different stress levels. In addition, two patterns of 90˚ domain-switching systems are characterized, namely (i) 90˚ turn about the tetragonal c-axis and (ii) 90˚ rotation of the tetragonal a-axis. In this case, PZT ceramic was loaded by the thermal stress at 80°C. Extent of domain switching is related to the direction of c-axis of the tetragonal structure, e.g., that axis, orientated close to the loading direction, makes severe domain switching. It is considered that there is 90˚ domain switching, but in actual, the angle of domain switching is less than 90˚, e.g., 85.4° ~ 90.0°. In situ TEM observation of the domain switching characteristics of PZT ceramic has been conducted with increasing the sample temperature from 25°C to 300°C, and the domain switching like behavior is directly observed from the lattice image, where the severe domain switching occurs less than 100°C. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=PZT" title="PZT">PZT</a>, <a href="https://publications.waset.org/abstracts/search?q=lead%20zirconate%20titanate" title=" lead zirconate titanate"> lead zirconate titanate</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric%20ceramic" title=" piezoelectric ceramic"> piezoelectric ceramic</a>, <a href="https://publications.waset.org/abstracts/search?q=domain%20switching" title=" domain switching"> domain switching</a>, <a href="https://publications.waset.org/abstracts/search?q=material%20property" title=" material property"> material property</a> </p> <a href="https://publications.waset.org/abstracts/89317/domain-switching-characteristics-of-lead-zirconate-titanate-piezoelectric-ceramic" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/89317.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">203</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4250</span> Code-Switching and Code Mixing among Ogba-English Bilingual Conversations</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ben-Fred%20Ohia">Ben-Fred Ohia</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Code-switching and code-mixing are linguistic behaviours that arise in a bilingual situation. They limit speakers in a conversation to decide which code they should use to utter particular phrases or words in the course of carrying out their utterance. Every human society is characterized by the existence of diverse linguistic varieties. The speakers of these varieties at some points have various degrees of contact with the non-speakers of their variety, which one of the outcomes of the linguistic contact is code-switching or code-mixing. The work discusses the nature of code-switching and code-mixing in Ogba-English bilinguals’ speeches. It provides a detailed explanation of the concept of code-switching and code-mixing and explains the typology of code-switching and code-mixing and their manifestation in Ogba-English bilingual speakers’ speeches. The findings reveal that code-switching and code-mixing are functionally motivated and being triggered by various conversational contexts. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bilinguals" title="bilinguals">bilinguals</a>, <a href="https://publications.waset.org/abstracts/search?q=code-mixing" title=" code-mixing"> code-mixing</a>, <a href="https://publications.waset.org/abstracts/search?q=code-switching" title=" code-switching"> code-switching</a>, <a href="https://publications.waset.org/abstracts/search?q=Ogba" title=" Ogba"> Ogba</a> </p> <a href="https://publications.waset.org/abstracts/122982/code-switching-and-code-mixing-among-ogba-english-bilingual-conversations" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/122982.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">181</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4249</span> Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Based on 2D Van Der Waals Heterostructures</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yunpeng%20Xia">Yunpeng Xia</a>, <a href="https://publications.waset.org/abstracts/search?q=Jiajia%20Zha"> Jiajia Zha</a>, <a href="https://publications.waset.org/abstracts/search?q=Haoxin%20Huang"> Haoxin Huang</a>, <a href="https://publications.waset.org/abstracts/search?q=Hau%20Ping%20Chan"> Hau Ping Chan</a>, <a href="https://publications.waset.org/abstracts/search?q=Chaoliang%20Tan"> Chaoliang Tan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Although the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been proven to play an essential role in fabricating high-performance electronic devices in the past decade, its effect on the performance of 2D material-based flash memory devices still remains unclear. Here, we report the exploration of the effect of MoTe₂ in different phases as the charge trapping layer on the performance of 2D van der Waals (vdW) heterostructure-based flash memory devices, where the metallic 1T′-MoTe₂ or semiconducting 2H-MoTe₂ nanoflake is used as the floating gate. By conducting comprehensive measurements on the two kinds of vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T′-MoTe₂ presents much better performance, including a larger memory window, faster switching speed (100 ns) and higher extinction ratio (107), than that of the device based on MoS₂/h-BN/2H-MoTe₂ heterostructure. Moreover, the device based on MoS₂/h-BN/1T′-MoTe₂ heterostructure also shows a long cycle (>1200 cycles) and retention (>3000 s) stability. Our study clearly demonstrates that the crystal phase of 2D TMDs has a significant impact on the performance of nonvolatile flash memory devices based on 2D vdW heterostructures, which paves the way for the fabrication of future high-performance memory devices based on 2D materials. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=crystal%20Phase" title="crystal Phase">crystal Phase</a>, <a href="https://publications.waset.org/abstracts/search?q=2D%20van%20der%20Waals%20heretostructure" title=" 2D van der Waals heretostructure"> 2D van der Waals heretostructure</a>, <a href="https://publications.waset.org/abstracts/search?q=flash%20memory%20device" title=" flash memory device"> flash memory device</a>, <a href="https://publications.waset.org/abstracts/search?q=floating%20gate" title=" floating gate"> floating gate</a> </p> <a href="https://publications.waset.org/abstracts/185722/uncovering-the-role-of-crystal-phase-in-determining-nonvolatile-flash-memory-device-performance-based-on-2d-van-der-waals-heterostructures" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/185722.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">51</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4248</span> A Single Phase ZVT-ZCT Power Factor Correction Boost Converter</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yakup%20Sahin">Yakup Sahin</a>, <a href="https://publications.waset.org/abstracts/search?q=Naim%20Suleyman%20Ting"> Naim Suleyman Ting</a>, <a href="https://publications.waset.org/abstracts/search?q=Ismail%20Aksoy"> Ismail Aksoy</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a single phase soft switched Zero Voltage Transition and Zero Current Transition (ZVT-ZCT) Power Factor Correction (PFC) boost converter is proposed. In the proposed PFC converter, the main switch turns on with ZVT and turns off with ZCT without any additional voltage or current stresses. Auxiliary switch turns on and off with zero current switching (ZCS). Also, the main diode turns on with zero voltage switching (ZVS) and turns off with ZCS. The proposed converter has features like low cost, simple control and structure. The output current and voltage are controlled by the proposed PFC converter in wide line and load range. The theoretical analysis of converter is clarified and the operating steps are given in detail. The simulation results of converter are obtained for 500 W and 100 kHz. It is observed that the semiconductor devices operate with soft switching (SS) perfectly. So, the switching power losses are minimum. Also, the proposed converter has 0.99 power factor with sinusoidal current shape. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=power%20factor%20correction" title="power factor correction">power factor correction</a>, <a href="https://publications.waset.org/abstracts/search?q=zero-voltage%20transition" title=" zero-voltage transition"> zero-voltage transition</a>, <a href="https://publications.waset.org/abstracts/search?q=zero-current%20transition" title=" zero-current transition"> zero-current transition</a>, <a href="https://publications.waset.org/abstracts/search?q=soft%20switching" title=" soft switching"> soft switching</a> </p> <a href="https://publications.waset.org/abstracts/43261/a-single-phase-zvt-zct-power-factor-correction-boost-converter" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/43261.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">803</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4247</span> Hybrid Energy Harvesting System with Energy Storage Management</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Lucian%20P%C3%AEslaru-D%C4%83nescu">Lucian Pîslaru-Dănescu</a>, <a href="https://publications.waset.org/abstracts/search?q=George-Claudiu%20Z%C4%83rnescu"> George-Claudiu Zărnescu</a>, <a href="https://publications.waset.org/abstracts/search?q=Lauren%C8%9Biu%20Constantin%20Lipan"> Laurențiu Constantin Lipan</a>, <a href="https://publications.waset.org/abstracts/search?q=Rare%C8%99-Andrei%20Chihaia"> Rareș-Andrei Chihaia</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In recent years, the utilization of supercapacitors for energy storage (ES) devices that are designed for energy harvesting (EH) applications has increased substantially. The use of supercapacitors as energy storage devices in hybrid energy harvesting systems allows the miniaturization of electronic structures for energy storage. This study is concerned with the concept of energy management capacitors – supercapacitors and the new electronic structures for energy storage used for energy harvesting devices. Supercapacitors are low-voltage devices, and electronic overvoltage protection is needed for powering the source. The power management device that uses these proposed new electronic structures for energy storage is better than conventional electronic structures used for this purpose, like rechargeable batteries, supercapacitors, and hybrid systems. A hybrid energy harvesting system with energy storage management is able to simultaneously use several energy sources with recovery from the environment. The power management device uses a summing electronic block to combine the electric power obtained from piezoelectric composite plates and from a photovoltaic conversion system. Also, an overvoltage protection circuit used as a voltage detector and an improved concept of charging supercapacitors is presented. The piezoelectric composite plates are realized only by pressing two printed circuit boards together without damaging or prestressing the piezoceramic elements. The photovoltaic conversion system has the advantage that the modules are covered with glass plates with nanostructured film of ZnO with the role of anti-reflective coating and to improve the overall efficiency of the solar panels. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=supercapacitors" title="supercapacitors">supercapacitors</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20storage" title=" energy storage"> energy storage</a>, <a href="https://publications.waset.org/abstracts/search?q=electronic%20overvoltage%20protection" title=" electronic overvoltage protection"> electronic overvoltage protection</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20harvesting" title=" energy harvesting"> energy harvesting</a> </p> <a href="https://publications.waset.org/abstracts/173799/hybrid-energy-harvesting-system-with-energy-storage-management" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/173799.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">82</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4246</span> Exploring the Factors Affecting the Dependability of Mobile Devices in the Current World</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mayowa%20A.%20Sofowora">Mayowa A. Sofowora</a>, <a href="https://publications.waset.org/abstracts/search?q=Seraphim%20D.%20Eyono%20Obono"> Seraphim D. Eyono Obono</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In recent times the level of advancement in electronics and manufacturing technologies for portable electronic devices, especially for mobile devices such as cell phones, smartphones, personal digital assistants and tablet computers is unprecedented. Mobile devices have become indispensable to individuals, and businesses all over the world. The high level of manufacturing and production of mobile devices has led to the rapid release of newer and sleeker models with new features and capabilities. However, these newer models therefore render older models obsolete, and this pushes people to frequently replace their devices. The drawback of such frequent replacements is that a large number of devices are disposed and they end up as e-waste. The fact that e-waste constitutes a major hazard to human health and to the environment is the motivation behind this study whose aim is to develop a model of possible factors that affects the dependability of mobile devices which in turn leads to the obsolescence of these devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=dependability" title="dependability">dependability</a>, <a href="https://publications.waset.org/abstracts/search?q=mobile%20devices" title=" mobile devices"> mobile devices</a>, <a href="https://publications.waset.org/abstracts/search?q=obsolescence" title=" obsolescence"> obsolescence</a>, <a href="https://publications.waset.org/abstracts/search?q=e-waste" title=" e-waste"> e-waste</a> </p> <a href="https://publications.waset.org/abstracts/36744/exploring-the-factors-affecting-the-dependability-of-mobile-devices-in-the-current-world" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/36744.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">314</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4245</span> Integration of Smart Grid Technologies with Smart Phones for Energy Monitoring and Management</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Arjmand%20Khaliq">Arjmand Khaliq</a>, <a href="https://publications.waset.org/abstracts/search?q=Pemra%20Sohaib"> Pemra Sohaib</a> </p> <p class="card-text"><strong>Abstract:</strong></p> There is increasing trend of use of smart devices in the present age. The growth of computing techniques and advancement in hardware has also brought the use of sensors and smart devices to a high degree during the course of time. So use of smart devices for control, management communication and optimization has become very popular. This paper gives proposed methodology which involves sensing and switching unite for load, two way communications between utility company and smart phones of consumers using cellular techniques and price signaling resulting active participation of user in energy management .The goal of this proposed control methodology is active participation of user in energy management with accommodation of renewable energy resource. This will provide load adjustment according to consumer’s choice, increased security and reliability for consumer, switching of load according to consumer need and monitoring and management of energy. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cellular%20networks" title="cellular networks">cellular networks</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20management" title=" energy management"> energy management</a>, <a href="https://publications.waset.org/abstracts/search?q=renewable%20energy%20source" title=" renewable energy source"> renewable energy source</a>, <a href="https://publications.waset.org/abstracts/search?q=smart%20grid%20technology" title=" smart grid technology"> smart grid technology</a> </p> <a href="https://publications.waset.org/abstracts/40863/integration-of-smart-grid-technologies-with-smart-phones-for-energy-monitoring-and-management" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/40863.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">413</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4244</span> Switching Studies on Ge15In5Te56Ag24 Thin Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Diptoshi%20Roy">Diptoshi Roy</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Sreevidya%20Varma"> G. Sreevidya Varma</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Asokan"> S. Asokan</a>, <a href="https://publications.waset.org/abstracts/search?q=Chandasree%20Das"> Chandasree Das </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Germanium Telluride based quaternary thin film switching devices with composition Ge<sub>15</sub>In<sub>5</sub>Te<sub>56</sub>Ag<sub>24,</sub> have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10<sup>-5 </sup>mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10<sup>-6 </sup>mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410<sup>c</sup>) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge<sub>15</sub>In<sub>5</sub>Te<sub>56</sub>Ag<sub>24 </sub>thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge<sub>15</sub>In<sub>5</sub>Te<sub>56</sub>Ag<sub>24</sub> sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chalcogenides" title="Chalcogenides">Chalcogenides</a>, <a href="https://publications.waset.org/abstracts/search?q=Vapor%20deposition" title=" Vapor deposition"> Vapor deposition</a>, <a href="https://publications.waset.org/abstracts/search?q=Electrical%20switching" title=" Electrical switching"> Electrical switching</a>, <a href="https://publications.waset.org/abstracts/search?q=PCM." title=" PCM."> PCM.</a> </p> <a href="https://publications.waset.org/abstracts/43850/switching-studies-on-ge15in5te56ag24-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/43850.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">377</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4243</span> Minimization of Switching Losses in Cascaded Multilevel Inverters Using Efficient Sequential Switching Hybrid-Modulation Techniques</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=P.%20Satish%20Kumar">P. Satish Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20Ramakrishna"> K. Ramakrishna</a>, <a href="https://publications.waset.org/abstracts/search?q=Ch.%20Lokeshwar%20Reddy"> Ch. Lokeshwar Reddy</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Sridhar"> G. Sridhar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents two different sequential switching hybrid-modulation strategies and implemented for cascaded multilevel inverters. Hybrid modulation strategies represent the combinations of Fundamental-Frequency Pulse Width Modulation (FFPWM) and Multilevel Sinusoidal-Modulation (MSPWM) strategies, and are designed for performance of the well-known Alternative Phase Opposition Disposition (APOD), Phase Shifted Carrier (PSC). The main characteristics of these modulations are the reduction of switching losses with good harmonic performance, balanced power loss dissipation among the devices with in a cell, and among the series-connected cells. The feasibility of these modulations is verified through spectral analysis, power loss analysis and simulation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cascaded%20multilevel%20inverters" title="cascaded multilevel inverters">cascaded multilevel inverters</a>, <a href="https://publications.waset.org/abstracts/search?q=hybrid%20modulation" title=" hybrid modulation"> hybrid modulation</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20loss%20analysis" title=" power loss analysis"> power loss analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=pulse%20width%20modulation" title=" pulse width modulation"> pulse width modulation</a> </p> <a href="https://publications.waset.org/abstracts/7094/minimization-of-switching-losses-in-cascaded-multilevel-inverters-using-efficient-sequential-switching-hybrid-modulation-techniques" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/7094.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">537</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4242</span> Relaxing Convergence Constraints in Local Priority Hysteresis Switching Logic</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mubarak%20Alhajri">Mubarak Alhajri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper addresses certain inherent limitations of local priority hysteresis switching logic. Our main result establishes that under persistent excitation assumption, it is possible to relax constraints requiring strict positivity of local priority and hysteresis switching constants. Relaxing these constraints allows the adaptive system to reach optimality which implies the performance improvement. The unconstrained local priority hysteresis switching logic is examined and conditions for global convergence are derived. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=adaptive%20control" title="adaptive control">adaptive control</a>, <a href="https://publications.waset.org/abstracts/search?q=convergence" title=" convergence"> convergence</a>, <a href="https://publications.waset.org/abstracts/search?q=hysteresis%20constant" title=" hysteresis constant"> hysteresis constant</a>, <a href="https://publications.waset.org/abstracts/search?q=hysteresis%20switching" title=" hysteresis switching"> hysteresis switching</a> </p> <a href="https://publications.waset.org/abstracts/61209/relaxing-convergence-constraints-in-local-priority-hysteresis-switching-logic" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/61209.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">393</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4241</span> Code Switching: A Case Study Of Lebanon</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Wassim%20Bekai">Wassim Bekai</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Code switching, as its name states, is altering between two or more languages in one sentence. The speaker tends to use code switching in his/her speech for better clarification of his/her message to the receiver. It is commonly used in sociocultural countries such as Lebanon because of the various cultures that have come across its lands through history, considering Lebanon is geographically located in the heart of the world, and hence between many cultures and languages. In addition, Lebanon was occupied by Turkish authorities for about 400 years, and later on by the French mandate, where both of these countries forced their languages in official papers and in the Lebanese educational system. In this paper, the importance of code switching in the Lebanese workplace will be examined, stressing the efficiency and amount of the production resulting from code switching in the workplace (factories, universities among other places) in addition to exploring the social, education, religious and cultural factors behind this phenomenon in Lebanon. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=code%20switching" title="code switching">code switching</a>, <a href="https://publications.waset.org/abstracts/search?q=Lebanon" title=" Lebanon"> Lebanon</a>, <a href="https://publications.waset.org/abstracts/search?q=cultural" title=" cultural"> cultural</a>, <a href="https://publications.waset.org/abstracts/search?q=factors" title=" factors"> factors</a> </p> <a href="https://publications.waset.org/abstracts/143945/code-switching-a-case-study-of-lebanon" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/143945.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">287</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4240</span> Graphene Based Electronic Device </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ali%20Safari">Ali Safari</a>, <a href="https://publications.waset.org/abstracts/search?q=Pejman%20Hosseiniun"> Pejman Hosseiniun</a>, <a href="https://publications.waset.org/abstracts/search?q=Iman%20Rahbari"> Iman Rahbari</a>, <a href="https://publications.waset.org/abstracts/search?q=MohamadReza%20Kalhor"> MohamadReza Kalhor </a> </p> <p class="card-text"><strong>Abstract:</strong></p> The semiconductor industry is placing an increased emphasis on emerging materials and devices that may provide improved performance, or provide novel functionality for devices. Recently, graphene, as a true two-dimensional carbon material, has shown fascinating applications in electronics. In this paper detailed discussions are introduced for possible applications of grapheme Transistor in RF and digital devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=graphene" title="graphene">graphene</a>, <a href="https://publications.waset.org/abstracts/search?q=GFET" title=" GFET"> GFET</a>, <a href="https://publications.waset.org/abstracts/search?q=RF" title=" RF"> RF</a>, <a href="https://publications.waset.org/abstracts/search?q=digital" title=" digital "> digital </a> </p> <a href="https://publications.waset.org/abstracts/7924/graphene-based-electronic-device" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/7924.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">361</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4239</span> Challenges and Proposed Solutions Toward Successful Dealing with E-Waste in Kuwait</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Salem%20Alajmi">Salem Alajmi</a>, <a href="https://publications.waset.org/abstracts/search?q=Bader%20Altaweel"> Bader Altaweel</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Kuwait, like many parts of the world, has started facing the dangerous growth of electrical and electronic wastes. This growth has been noted last two decades, coming along with the development of mobile phones, computers, TVs, as well as other electronic devices and electrical equipment. Kuwait is already among the highest global producers of electronic waste (E-waste) in kg per capita. Furthermore, Kuwait is among the global countries that set high-level future targets in renewable energy projects. Accumulation of this electronic waste, as well as accelerated renewable energy projects, will lead to the increase of future threats to the country. In this research, factors that lead to the increase the e-waste in Kuwait are presented. Also, the current situations of dealing with e-waste in the country as well as current challenges are examined. The impact of renewable energy projects on future E-wastes accumulation is considered. Moreover, this research proposes the best strategies and practices toward successfully dealing with the waste of electronic devices and renewable energy technologies. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kuwait" title="Kuwait">Kuwait</a>, <a href="https://publications.waset.org/abstracts/search?q=e-waste" title=" e-waste"> e-waste</a>, <a href="https://publications.waset.org/abstracts/search?q=extended%20producer%20responsibility" title=" extended producer responsibility"> extended producer responsibility</a>, <a href="https://publications.waset.org/abstracts/search?q=environment" title=" environment"> environment</a>, <a href="https://publications.waset.org/abstracts/search?q=recycle" title=" recycle"> recycle</a>, <a href="https://publications.waset.org/abstracts/search?q=recovery" title=" recovery"> recovery</a> </p> <a href="https://publications.waset.org/abstracts/145237/challenges-and-proposed-solutions-toward-successful-dealing-with-e-waste-in-kuwait" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/145237.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">182</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4238</span> A Variable Speed DC Motor Using a Converter DC-DC</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Touati%20Mawloud">Touati Mawloud</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Between electronics and electrical systems has developed a new technology that is power electronics, also called electronic of strong currents, this application covers a very wide range of use particularly in the industrial sector, where direct current engines are frequently used, they control their speed by the use of the converters (DC-DC), which aims to deal with various mechanical disturbances (fillers) or electrical (power). In future, it will play a critical role in transforming the current electric grid into the next generation grid. Existing silicon-based PE devices enable electric grid functionalities such as fault-current limiting and converter devices. Systems of future are envisioned to be highly automated, interactive "smart" grid that can self-adjust to meet the demand for electricity reliability, securely, and economically. Transforming today’s electric grid to the grid of the future will require creating or advancing a number of technologies, tools, and techniques—specifically, the capabilities of power electronics (PE). PE devices provide an interface between electrical system, and electronics system by converting AC to direct current (DC) and vice versa. Solid-state wide Bandgap (WBG), semiconductor electronics (such as silicon carbide [SiC], gallium nitride [GaN], and diamond) are envisioned to improve the reliability and efficiency of the next-generation grid substantially. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Power%20Electronics%20%28PE%29" title="Power Electronics (PE)">Power Electronics (PE)</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20system%20generation%20electric%20grid" title=" electrical system generation electric grid"> electrical system generation electric grid</a>, <a href="https://publications.waset.org/abstracts/search?q=switching%20frequencies" title=" switching frequencies"> switching frequencies</a>, <a href="https://publications.waset.org/abstracts/search?q=converter%20devices" title=" converter devices"> converter devices</a> </p> <a href="https://publications.waset.org/abstracts/16214/a-variable-speed-dc-motor-using-a-converter-dc-dc" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/16214.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">442</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4237</span> Code – Switching in a Flipped Classroom for Foreign Students</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=E.%20Tutova">E. Tutova</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.%20Ebzeeva"> Y. Ebzeeva</a>, <a href="https://publications.waset.org/abstracts/search?q=L.%20Gishkaeva"> L. Gishkaeva</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.Smirnova"> Y.Smirnova</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20Dubinina"> N. Dubinina</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We have been working with students from different countries and found it crucial to switch the languages to explain something. Whether it is Russian, or Chinese, explaining in a different language plays an important role for students’ cognitive abilities. In this work we are going to explore how code switching may impact the student’s perception of information. Code-switching is a tool defined by linguists as a switch from one language to another for convenience, explanation of terms unavailable in an initial language or sometimes prestige. In our case, we are going to consider code-switching from the function of convenience. As a rule, students who come to study Russian in a language environment, lack many skills in speaking the language. Thus, it is made harder to explain the rules for them of another language, which is English. That is why switching between English, Russian and Mandarin is crucial for their better understanding. In this work we are going to explore the code-switching as a tool which can help a teacher in a flipped classroom. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bilingualism" title="bilingualism">bilingualism</a>, <a href="https://publications.waset.org/abstracts/search?q=psychological%20linguistics" title=" psychological linguistics"> psychological linguistics</a>, <a href="https://publications.waset.org/abstracts/search?q=code-switching" title=" code-switching"> code-switching</a>, <a href="https://publications.waset.org/abstracts/search?q=social%20linguistics" title=" social linguistics"> social linguistics</a> </p> <a href="https://publications.waset.org/abstracts/163259/code-switching-in-a-flipped-classroom-for-foreign-students" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/163259.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">81</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4236</span> Facts of Near Field Communication</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Amin%20Hamrahi">Amin Hamrahi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Near Field Communication (NFC) is one of the latest wireless communication technologies. NFC enables electronic devices to communicate in short range using the radio waves. NFC offers safe yet simple communication between electronic devices. This technology provides the fastest way to communicate two device with in a fraction of second. With NFC technology, communication occurs when an NFC-compatible device is brought within a few centimeters of another NFC device. NFC is an open-platform technology that is being standardized in the NFC Forum. NFC is based on and extends on RFID. It operates on 13.56 MHz frequency. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=near%20field%20communication" title="near field communication">near field communication</a>, <a href="https://publications.waset.org/abstracts/search?q=NFC%20technology" title=" NFC technology"> NFC technology</a>, <a href="https://publications.waset.org/abstracts/search?q=wireless%20communication%20technologies" title=" wireless communication technologies"> wireless communication technologies</a>, <a href="https://publications.waset.org/abstracts/search?q=NFC-compatible%20device" title=" NFC-compatible device"> NFC-compatible device</a>, <a href="https://publications.waset.org/abstracts/search?q=NFC" title=" NFC"> NFC</a>, <a href="https://publications.waset.org/abstracts/search?q=communication" title=" communication"> communication</a> </p> <a href="https://publications.waset.org/abstracts/30917/facts-of-near-field-communication" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30917.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">465</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=electronic%20switching%20devices&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=electronic%20switching%20devices&page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=electronic%20switching%20devices&page=4">4</a></li> <li class="page-item"><a class="page-link" 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