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class="vector-toc-numb">2</span> <span>Technical details</span> </div> </a> <ul id="toc-Technical_details-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Inversion" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Inversion"> <div class="vector-toc-text"> <span class="vector-toc-numb">3</span> <span>Inversion</span> </div> </a> <button aria-controls="toc-Inversion-sublist" class="cdx-button cdx-button--weight-quiet cdx-button--icon-only vector-toc-toggle"> <span class="vector-icon mw-ui-icon-wikimedia-expand"></span> <span>Toggle Inversion subsection</span> </button> <ul id="toc-Inversion-sublist" class="vector-toc-list"> <li id="toc-Power_supply_pins" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Power_supply_pins"> <div class="vector-toc-text"> <span class="vector-toc-numb">3.1</span> <span>Power supply pins</span> </div> </a> <ul id="toc-Power_supply_pins-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Duality" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Duality"> <div class="vector-toc-text"> <span class="vector-toc-numb">3.2</span> <span>Duality</span> </div> </a> <ul id="toc-Duality-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Logic" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Logic"> <div class="vector-toc-text"> <span class="vector-toc-numb">3.3</span> <span>Logic</span> </div> </a> <ul id="toc-Logic-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Example:_NAND_gate_in_physical_layout" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Example:_NAND_gate_in_physical_layout"> <div class="vector-toc-text"> <span class="vector-toc-numb">3.4</span> <span>Example: NAND gate in physical layout</span> </div> </a> <ul id="toc-Example:_NAND_gate_in_physical_layout-sublist" class="vector-toc-list"> </ul> </li> </ul> </li> <li id="toc-Power:_switching_and_leakage" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Power:_switching_and_leakage"> <div class="vector-toc-text"> <span class="vector-toc-numb">4</span> <span>Power: switching and leakage</span> </div> </a> <button aria-controls="toc-Power:_switching_and_leakage-sublist" class="cdx-button cdx-button--weight-quiet cdx-button--icon-only vector-toc-toggle"> <span class="vector-icon mw-ui-icon-wikimedia-expand"></span> <span>Toggle Power: switching and leakage subsection</span> </button> <ul id="toc-Power:_switching_and_leakage-sublist" class="vector-toc-list"> <li id="toc-Static_dissipation" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Static_dissipation"> <div class="vector-toc-text"> <span class="vector-toc-numb">4.1</span> <span>Static dissipation</span> </div> </a> <ul id="toc-Static_dissipation-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Dynamic_dissipation" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Dynamic_dissipation"> <div class="vector-toc-text"> <span class="vector-toc-numb">4.2</span> <span>Dynamic dissipation</span> </div> </a> <ul id="toc-Dynamic_dissipation-sublist" class="vector-toc-list"> <li id="toc-Charging_and_discharging_of_load_capacitances" class="vector-toc-list-item vector-toc-level-3"> <a class="vector-toc-link" href="#Charging_and_discharging_of_load_capacitances"> <div class="vector-toc-text"> <span class="vector-toc-numb">4.2.1</span> <span>Charging and discharging of load capacitances</span> </div> </a> <ul id="toc-Charging_and_discharging_of_load_capacitances-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Short-circuit_power" class="vector-toc-list-item vector-toc-level-3"> <a class="vector-toc-link" href="#Short-circuit_power"> <div class="vector-toc-text"> <span class="vector-toc-numb">4.2.2</span> <span>Short-circuit power</span> </div> </a> <ul id="toc-Short-circuit_power-sublist" class="vector-toc-list"> </ul> </li> </ul> </li> </ul> </li> <li id="toc-Input_protection" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Input_protection"> <div class="vector-toc-text"> <span class="vector-toc-numb">5</span> <span>Input protection</span> </div> </a> <ul id="toc-Input_protection-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Analog_CMOS" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Analog_CMOS"> <div class="vector-toc-text"> <span class="vector-toc-numb">6</span> <span>Analog CMOS</span> </div> </a> <button aria-controls="toc-Analog_CMOS-sublist" class="cdx-button cdx-button--weight-quiet cdx-button--icon-only vector-toc-toggle"> <span class="vector-icon mw-ui-icon-wikimedia-expand"></span> <span>Toggle Analog CMOS subsection</span> </button> <ul id="toc-Analog_CMOS-sublist" class="vector-toc-list"> <li id="toc-RF_CMOS" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#RF_CMOS"> <div class="vector-toc-text"> <span class="vector-toc-numb">6.1</span> <span>RF CMOS</span> </div> </a> <ul id="toc-RF_CMOS-sublist" class="vector-toc-list"> </ul> </li> </ul> </li> <li id="toc-Temperature_range" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Temperature_range"> <div class="vector-toc-text"> <span class="vector-toc-numb">7</span> <span>Temperature range</span> </div> </a> <ul id="toc-Temperature_range-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Single-electron_MOS_transistors" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Single-electron_MOS_transistors"> <div class="vector-toc-text"> <span class="vector-toc-numb">8</span> <span>Single-electron MOS transistors</span> </div> </a> <ul id="toc-Single-electron_MOS_transistors-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-See_also" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#See_also"> <div class="vector-toc-text"> <span class="vector-toc-numb">9</span> <span>See also</span> </div> </a> <ul id="toc-See_also-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-References" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#References"> <div class="vector-toc-text"> <span class="vector-toc-numb">10</span> <span>References</span> </div> </a> <ul id="toc-References-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Further_reading" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Further_reading"> <div class="vector-toc-text"> <span class="vector-toc-numb">11</span> <span>Further reading</span> </div> </a> <ul id="toc-Further_reading-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-External_links" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#External_links"> <div class="vector-toc-text"> <span class="vector-toc-numb">12</span> <span>External links</span> </div> </a> <ul id="toc-External_links-sublist" class="vector-toc-list"> </ul> </li> </ul> </div> </div> </nav> </div> </div> <div class="mw-content-container"> <main id="content" class="mw-body"> <header class="mw-body-header vector-page-titlebar"> <nav aria-label="Contents" class="vector-toc-landmark"> <div id="vector-page-titlebar-toc" class="vector-dropdown vector-page-titlebar-toc vector-button-flush-left" > <input type="checkbox" id="vector-page-titlebar-toc-checkbox" role="button" aria-haspopup="true" data-event-name="ui.dropdown-vector-page-titlebar-toc" class="vector-dropdown-checkbox " aria-label="Toggle the table of contents" > <label id="vector-page-titlebar-toc-label" for="vector-page-titlebar-toc-checkbox" class="vector-dropdown-label cdx-button cdx-button--fake-button cdx-button--fake-button--enabled cdx-button--weight-quiet cdx-button--icon-only " aria-hidden="true" ><span class="vector-icon mw-ui-icon-listBullet mw-ui-icon-wikimedia-listBullet"></span> <span class="vector-dropdown-label-text">Toggle the table of contents</span> </label> <div class="vector-dropdown-content"> <div id="vector-page-titlebar-toc-unpinned-container" class="vector-unpinned-container"> </div> </div> </div> </nav> <h1 id="firstHeading" class="firstHeading mw-first-heading"><span class="mw-page-title-main">CMOS</span></h1> <div id="p-lang-btn" class="vector-dropdown mw-portlet mw-portlet-lang" > <input type="checkbox" id="p-lang-btn-checkbox" role="button" aria-haspopup="true" data-event-name="ui.dropdown-p-lang-btn" class="vector-dropdown-checkbox mw-interlanguage-selector" aria-label="Go to an article in another language. Available in 44 languages" > <label id="p-lang-btn-label" for="p-lang-btn-checkbox" class="vector-dropdown-label cdx-button cdx-button--fake-button cdx-button--fake-button--enabled cdx-button--weight-quiet cdx-button--action-progressive mw-portlet-lang-heading-44" aria-hidden="true" ><span class="vector-icon mw-ui-icon-language-progressive mw-ui-icon-wikimedia-language-progressive"></span> <span class="vector-dropdown-label-text">44 languages</span> </label> <div class="vector-dropdown-content"> <div class="vector-menu-content"> <ul class="vector-menu-content-list"> <li class="interlanguage-link interwiki-ar mw-list-item"><a href="https://ar.wikipedia.org/wiki/%D8%B3%D9%8A%D9%85%D9%88%D8%B3" title="سيموس – Arabic" lang="ar" hreflang="ar" data-title="سيموس" data-language-autonym="العربية" data-language-local-name="Arabic" class="interlanguage-link-target"><span>العربية</span></a></li><li class="interlanguage-link interwiki-az mw-list-item"><a href="https://az.wikipedia.org/wiki/Tamamlay%C4%B1c%C4%B1_metal-oksid_yar%C4%B1mke%C3%A7irici" title="Tamamlayıcı metal-oksid yarımkeçirici – Azerbaijani" lang="az" hreflang="az" data-title="Tamamlayıcı metal-oksid yarımkeçirici" data-language-autonym="Azərbaycanca" data-language-local-name="Azerbaijani" class="interlanguage-link-target"><span>Azərbaycanca</span></a></li><li class="interlanguage-link interwiki-bn mw-list-item"><a href="https://bn.wikipedia.org/wiki/%E0%A6%B8%E0%A6%BF%E0%A6%AE%E0%A6%B8" title="সিমস – Bangla" lang="bn" hreflang="bn" data-title="সিমস" data-language-autonym="বাংলা" data-language-local-name="Bangla" class="interlanguage-link-target"><span>বাংলা</span></a></li><li class="interlanguage-link interwiki-zh-min-nan mw-list-item"><a href="https://zh-min-nan.wikipedia.org/wiki/CMOS" title="CMOS – Minnan" lang="nan" hreflang="nan" data-title="CMOS" data-language-autonym="閩南語 / Bân-lâm-gú" data-language-local-name="Minnan" class="interlanguage-link-target"><span>閩南語 / Bân-lâm-gú</span></a></li><li class="interlanguage-link interwiki-be mw-list-item"><a href="https://be.wikipedia.org/wiki/%D0%9A%D0%9C%D0%90%D0%9F" title="КМАП – Belarusian" lang="be" hreflang="be" data-title="КМАП" data-language-autonym="Беларуская" data-language-local-name="Belarusian" class="interlanguage-link-target"><span>Беларуская</span></a></li><li class="interlanguage-link interwiki-be-x-old mw-list-item"><a href="https://be-tarask.wikipedia.org/wiki/%D0%9A%D0%9C%D0%90%D0%9F" title="КМАП – Belarusian (Taraškievica orthography)" lang="be-tarask" hreflang="be-tarask" data-title="КМАП" data-language-autonym="Беларуская (тарашкевіца)" data-language-local-name="Belarusian (Taraškievica orthography)" class="interlanguage-link-target"><span>Беларуская (тарашкевіца)</span></a></li><li class="interlanguage-link interwiki-bg mw-list-item"><a href="https://bg.wikipedia.org/wiki/CMOS" title="CMOS – Bulgarian" lang="bg" hreflang="bg" data-title="CMOS" data-language-autonym="Български" data-language-local-name="Bulgarian" class="interlanguage-link-target"><span>Български</span></a></li><li class="interlanguage-link interwiki-ca mw-list-item"><a href="https://ca.wikipedia.org/wiki/CMOS" title="CMOS – Catalan" lang="ca" hreflang="ca" data-title="CMOS" data-language-autonym="Català" data-language-local-name="Catalan" class="interlanguage-link-target"><span>Català</span></a></li><li class="interlanguage-link interwiki-cs mw-list-item"><a href="https://cs.wikipedia.org/wiki/CMOS" title="CMOS – Czech" lang="cs" hreflang="cs" data-title="CMOS" data-language-autonym="Čeština" data-language-local-name="Czech" class="interlanguage-link-target"><span>Čeština</span></a></li><li class="interlanguage-link interwiki-de mw-list-item"><a href="https://de.wikipedia.org/wiki/Complementary_metal-oxide-semiconductor" title="Complementary metal-oxide-semiconductor – German" lang="de" hreflang="de" data-title="Complementary metal-oxide-semiconductor" data-language-autonym="Deutsch" data-language-local-name="German" class="interlanguage-link-target"><span>Deutsch</span></a></li><li class="interlanguage-link interwiki-et mw-list-item"><a href="https://et.wikipedia.org/wiki/CMOS" title="CMOS – Estonian" lang="et" hreflang="et" data-title="CMOS" data-language-autonym="Eesti" data-language-local-name="Estonian" class="interlanguage-link-target"><span>Eesti</span></a></li><li class="interlanguage-link interwiki-es mw-list-item"><a href="https://es.wikipedia.org/wiki/Semiconductor_complementario_de_%C3%B3xido_met%C3%A1lico" title="Semiconductor complementario de óxido metálico – Spanish" lang="es" hreflang="es" data-title="Semiconductor complementario de óxido metálico" data-language-autonym="Español" data-language-local-name="Spanish" class="interlanguage-link-target"><span>Español</span></a></li><li class="interlanguage-link interwiki-eu mw-list-item"><a href="https://eu.wikipedia.org/wiki/CMOS" title="CMOS – Basque" lang="eu" hreflang="eu" data-title="CMOS" data-language-autonym="Euskara" data-language-local-name="Basque" class="interlanguage-link-target"><span>Euskara</span></a></li><li class="interlanguage-link interwiki-fa mw-list-item"><a href="https://fa.wikipedia.org/wiki/%D8%B3%DB%8C%D9%85%D8%A7%D8%B3" title="سیماس – Persian" lang="fa" hreflang="fa" data-title="سیماس" data-language-autonym="فارسی" data-language-local-name="Persian" class="interlanguage-link-target"><span>فارسی</span></a></li><li class="interlanguage-link interwiki-fr mw-list-item"><a href="https://fr.wikipedia.org/wiki/Complementary_metal_oxide_semi-conductor" title="Complementary metal oxide semi-conductor – French" lang="fr" hreflang="fr" data-title="Complementary metal oxide semi-conductor" data-language-autonym="Français" data-language-local-name="French" class="interlanguage-link-target"><span>Français</span></a></li><li class="interlanguage-link interwiki-ko mw-list-item"><a href="https://ko.wikipedia.org/wiki/CMOS" title="CMOS – Korean" lang="ko" hreflang="ko" data-title="CMOS" data-language-autonym="한국어" data-language-local-name="Korean" class="interlanguage-link-target"><span>한국어</span></a></li><li class="interlanguage-link interwiki-hi mw-list-item"><a href="https://hi.wikipedia.org/wiki/%E0%A4%B8%E0%A5%80%E0%A4%AE%E0%A5%89%E0%A4%B8_(CMOS)" title="सीमॉस (CMOS) – Hindi" lang="hi" hreflang="hi" data-title="सीमॉस (CMOS)" data-language-autonym="हिन्दी" data-language-local-name="Hindi" class="interlanguage-link-target"><span>हिन्दी</span></a></li><li class="interlanguage-link interwiki-hr mw-list-item"><a href="https://hr.wikipedia.org/wiki/CMOS" title="CMOS – Croatian" lang="hr" hreflang="hr" data-title="CMOS" data-language-autonym="Hrvatski" data-language-local-name="Croatian" class="interlanguage-link-target"><span>Hrvatski</span></a></li><li class="interlanguage-link interwiki-id mw-list-item"><a href="https://id.wikipedia.org/wiki/CMOS" title="CMOS – Indonesian" lang="id" hreflang="id" data-title="CMOS" data-language-autonym="Bahasa Indonesia" data-language-local-name="Indonesian" class="interlanguage-link-target"><span>Bahasa Indonesia</span></a></li><li class="interlanguage-link interwiki-it mw-list-item"><a href="https://it.wikipedia.org/wiki/CMOS" title="CMOS – Italian" lang="it" hreflang="it" data-title="CMOS" data-language-autonym="Italiano" data-language-local-name="Italian" class="interlanguage-link-target"><span>Italiano</span></a></li><li class="interlanguage-link interwiki-he mw-list-item"><a href="https://he.wikipedia.org/wiki/CMOS" title="CMOS – Hebrew" lang="he" hreflang="he" data-title="CMOS" data-language-autonym="עברית" data-language-local-name="Hebrew" class="interlanguage-link-target"><span>עברית</span></a></li><li class="interlanguage-link interwiki-kn mw-list-item"><a href="https://kn.wikipedia.org/wiki/%E0%B2%B8%E0%B2%BF_%E0%B2%8E%E0%B2%AE%E0%B3%8D_%E0%B2%92_%E0%B2%8E%E0%B2%B8%E0%B3%8D" title="ಸಿ ಎಮ್ ಒ ಎಸ್ – Kannada" lang="kn" hreflang="kn" data-title="ಸಿ ಎಮ್ ಒ ಎಸ್" data-language-autonym="ಕನ್ನಡ" data-language-local-name="Kannada" class="interlanguage-link-target"><span>ಕನ್ನಡ</span></a></li><li class="interlanguage-link interwiki-hu mw-list-item"><a href="https://hu.wikipedia.org/wiki/CMOS" title="CMOS – Hungarian" lang="hu" hreflang="hu" data-title="CMOS" data-language-autonym="Magyar" data-language-local-name="Hungarian" class="interlanguage-link-target"><span>Magyar</span></a></li><li class="interlanguage-link interwiki-ml mw-list-item"><a href="https://ml.wikipedia.org/wiki/%E0%B4%B8%E0%B4%BF.%E0%B4%8E%E0%B4%82.%E0%B4%93.%E0%B4%8E%E0%B4%B8%E0%B5%8D._(%E0%B4%95%E0%B4%AE%E0%B5%8D%E0%B4%AA%E0%B5%8D%E0%B4%AF%E0%B5%82%E0%B4%9F%E0%B5%8D%E0%B4%9F%E0%B5%BC_%E0%B4%B9%E0%B4%BE%E0%B5%BC%E0%B4%A1%E0%B5%8D_%E0%B4%B5%E0%B5%86%E0%B4%AF%E0%B5%BC)" title="സി.എം.ഓ.എസ്. (കമ്പ്യൂട്ടർ ഹാർഡ് വെയർ) – Malayalam" lang="ml" hreflang="ml" data-title="സി.എം.ഓ.എസ്. (കമ്പ്യൂട്ടർ ഹാർഡ് വെയർ)" data-language-autonym="മലയാളം" data-language-local-name="Malayalam" class="interlanguage-link-target"><span>മലയാളം</span></a></li><li class="interlanguage-link interwiki-nl mw-list-item"><a href="https://nl.wikipedia.org/wiki/CMOS" title="CMOS – Dutch" lang="nl" hreflang="nl" data-title="CMOS" data-language-autonym="Nederlands" data-language-local-name="Dutch" class="interlanguage-link-target"><span>Nederlands</span></a></li><li class="interlanguage-link interwiki-ja mw-list-item"><a href="https://ja.wikipedia.org/wiki/CMOS" title="CMOS – Japanese" lang="ja" hreflang="ja" data-title="CMOS" data-language-autonym="日本語" data-language-local-name="Japanese" class="interlanguage-link-target"><span>日本語</span></a></li><li class="interlanguage-link interwiki-no mw-list-item"><a href="https://no.wikipedia.org/wiki/CMOS" title="CMOS – Norwegian Bokmål" lang="nb" hreflang="nb" data-title="CMOS" data-language-autonym="Norsk bokmål" data-language-local-name="Norwegian Bokmål" class="interlanguage-link-target"><span>Norsk bokmål</span></a></li><li class="interlanguage-link interwiki-nn mw-list-item"><a href="https://nn.wikipedia.org/wiki/CMOS" title="CMOS – Norwegian Nynorsk" lang="nn" hreflang="nn" data-title="CMOS" data-language-autonym="Norsk nynorsk" data-language-local-name="Norwegian Nynorsk" class="interlanguage-link-target"><span>Norsk nynorsk</span></a></li><li class="interlanguage-link interwiki-pl mw-list-item"><a href="https://pl.wikipedia.org/wiki/CMOS" title="CMOS – Polish" lang="pl" hreflang="pl" data-title="CMOS" data-language-autonym="Polski" data-language-local-name="Polish" class="interlanguage-link-target"><span>Polski</span></a></li><li class="interlanguage-link interwiki-pt mw-list-item"><a href="https://pt.wikipedia.org/wiki/CMOS" title="CMOS – Portuguese" lang="pt" hreflang="pt" data-title="CMOS" data-language-autonym="Português" data-language-local-name="Portuguese" class="interlanguage-link-target"><span>Português</span></a></li><li class="interlanguage-link interwiki-ro mw-list-item"><a href="https://ro.wikipedia.org/wiki/Semiconductor_metal-oxid_complementar" title="Semiconductor metal-oxid complementar – Romanian" lang="ro" hreflang="ro" data-title="Semiconductor metal-oxid complementar" data-language-autonym="Română" data-language-local-name="Romanian" class="interlanguage-link-target"><span>Română</span></a></li><li class="interlanguage-link interwiki-ru mw-list-item"><a href="https://ru.wikipedia.org/wiki/%D0%9A%D0%9C%D0%9E%D0%9F" title="КМОП – Russian" lang="ru" hreflang="ru" data-title="КМОП" data-language-autonym="Русский" data-language-local-name="Russian" class="interlanguage-link-target"><span>Русский</span></a></li><li class="interlanguage-link interwiki-sk mw-list-item"><a href="https://sk.wikipedia.org/wiki/Complementary_Metal_Oxide_Semiconductor" title="Complementary Metal Oxide Semiconductor – Slovak" lang="sk" hreflang="sk" data-title="Complementary Metal Oxide Semiconductor" data-language-autonym="Slovenčina" data-language-local-name="Slovak" class="interlanguage-link-target"><span>Slovenčina</span></a></li><li class="interlanguage-link interwiki-sr mw-list-item"><a href="https://sr.wikipedia.org/wiki/CMOS" title="CMOS – Serbian" lang="sr" hreflang="sr" data-title="CMOS" data-language-autonym="Српски / srpski" data-language-local-name="Serbian" class="interlanguage-link-target"><span>Српски / srpski</span></a></li><li class="interlanguage-link interwiki-sh mw-list-item"><a href="https://sh.wikipedia.org/wiki/CMOS" title="CMOS – Serbo-Croatian" lang="sh" hreflang="sh" data-title="CMOS" data-language-autonym="Srpskohrvatski / српскохрватски" data-language-local-name="Serbo-Croatian" class="interlanguage-link-target"><span>Srpskohrvatski / српскохрватски</span></a></li><li class="interlanguage-link interwiki-fi mw-list-item"><a href="https://fi.wikipedia.org/wiki/CMOS" title="CMOS – Finnish" lang="fi" hreflang="fi" data-title="CMOS" data-language-autonym="Suomi" data-language-local-name="Finnish" class="interlanguage-link-target"><span>Suomi</span></a></li><li class="interlanguage-link interwiki-sv mw-list-item"><a href="https://sv.wikipedia.org/wiki/CMOS" title="CMOS – Swedish" lang="sv" hreflang="sv" data-title="CMOS" data-language-autonym="Svenska" data-language-local-name="Swedish" class="interlanguage-link-target"><span>Svenska</span></a></li><li class="interlanguage-link interwiki-ta mw-list-item"><a href="https://ta.wikipedia.org/wiki/%E0%AE%A4%E0%AF%81%E0%AE%A3%E0%AF%88_%E0%AE%89%E0%AE%B2%E0%AF%8B%E0%AE%95_%E0%AE%86%E0%AE%95%E0%AF%8D%E0%AE%9A%E0%AF%88%E0%AE%9F%E0%AF%81_%E0%AE%95%E0%AF%81%E0%AE%B1%E0%AF%88%E0%AE%95%E0%AE%9F%E0%AE%A4%E0%AF%8D%E0%AE%A4%E0%AE%BF" title="துணை உலோக ஆக்சைடு குறைகடத்தி – Tamil" lang="ta" hreflang="ta" data-title="துணை உலோக ஆக்சைடு குறைகடத்தி" data-language-autonym="தமிழ்" data-language-local-name="Tamil" class="interlanguage-link-target"><span>தமிழ்</span></a></li><li class="interlanguage-link interwiki-tr mw-list-item"><a href="https://tr.wikipedia.org/wiki/CMOS" title="CMOS – Turkish" lang="tr" hreflang="tr" data-title="CMOS" data-language-autonym="Türkçe" data-language-local-name="Turkish" class="interlanguage-link-target"><span>Türkçe</span></a></li><li class="interlanguage-link interwiki-uk mw-list-item"><a href="https://uk.wikipedia.org/wiki/%D0%9A%D0%9C%D0%9E%D0%9D" title="КМОН – Ukrainian" lang="uk" hreflang="uk" data-title="КМОН" data-language-autonym="Українська" data-language-local-name="Ukrainian" class="interlanguage-link-target"><span>Українська</span></a></li><li class="interlanguage-link interwiki-ur mw-list-item"><a href="https://ur.wikipedia.org/wiki/%D8%AA%DA%A9%D9%85%DB%8C%D9%84%DB%8C_%D9%81%D9%84%D8%B2%DB%8C_%D8%A7%DA%A9%D8%B3%DB%8C%D8%AF_%D9%86%DB%8C%D9%85_%D9%85%D9%88%D8%B5%D9%84_(%D8%AA%D9%81%D8%A7%D9%86%D9%85)" title="تکمیلی فلزی اکسید نیم موصل (تفانم) – Urdu" 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id="siteSub" class="noprint">From Wikipedia, the free encyclopedia</div> </div> <div id="contentSub"><div id="mw-content-subtitle"></div></div> <div id="mw-content-text" class="mw-body-content"><div class="mw-content-ltr mw-parser-output" lang="en" dir="ltr"><div class="shortdescription nomobile noexcerpt noprint searchaux" style="display:none">Technology for constructing integrated circuits</div> <style data-mw-deduplicate="TemplateStyles:r1236090951">.mw-parser-output .hatnote{font-style:italic}.mw-parser-output div.hatnote{padding-left:1.6em;margin-bottom:0.5em}.mw-parser-output .hatnote i{font-style:normal}.mw-parser-output .hatnote+link+.hatnote{margin-top:-0.5em}@media print{body.ns-0 .mw-parser-output .hatnote{display:none!important}}</style><div role="note" class="hatnote navigation-not-searchable">For other uses, see <a href="/wiki/CMOS_(disambiguation)" class="mw-disambig" title="CMOS (disambiguation)">CMOS (disambiguation)</a>.</div> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:CMOS_inverter.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/2/2f/CMOS_inverter.svg/220px-CMOS_inverter.svg.png" decoding="async" width="220" height="331" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/2/2f/CMOS_inverter.svg/330px-CMOS_inverter.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/2/2f/CMOS_inverter.svg/440px-CMOS_inverter.svg.png 2x" data-file-width="512" data-file-height="770" /></a><figcaption>CMOS inverter (a <a href="/wiki/Inverter_(logic_gate)" title="Inverter (logic gate)">NOT logic gate</a>)</figcaption></figure> <p><b>Complementary metal–oxide–semiconductor</b> (<b>CMOS</b>, pronounced "sea-moss ", <span class="rt-commentedText nowrap"><span class="IPA nopopups noexcerpt" lang="en-fonipa"><a href="/wiki/Help:IPA/English" title="Help:IPA/English">/<span style="border-bottom:1px dotted"><span title="'s' in 'sigh'">s</span><span title="/iː/: 'ee' in 'fleece'">iː</span><span title="'m' in 'my'">m</span><span title="/ɑː/: 'a' in 'father'">ɑː</span><span title="'s' in 'sigh'">s</span></span>/</a></span></span>, <span class="rt-commentedText nowrap"><span class="IPA nopopups noexcerpt" lang="en-fonipa"><a href="/wiki/Help:IPA/English" title="Help:IPA/English">/-<span style="border-bottom:1px dotted"><span title="/ɒ/: 'o' in 'body'">ɒ</span><span title="'s' in 'sigh'">s</span></span>/</a></span></span>) is a type of <a href="/wiki/MOSFET" title="MOSFET">metal–oxide–semiconductor field-effect transistor</a> (MOSFET) <a href="/wiki/Semiconductor_device_fabrication" title="Semiconductor device fabrication">fabrication process</a> that uses complementary and symmetrical pairs of <a href="/wiki/P-type_semiconductor" class="mw-redirect" title="P-type semiconductor">p-type</a> and <a href="/wiki/N-type_semiconductor" class="mw-redirect" title="N-type semiconductor">n-type</a> MOSFETs for logic functions.<sup id="cite_ref-1" class="reference"><a href="#cite_note-1"><span class="cite-bracket">[</span>1<span class="cite-bracket">]</span></a></sup> CMOS technology is used for constructing <a href="/wiki/Integrated_circuit" title="Integrated circuit">integrated circuit</a> (IC) chips, including <a href="/wiki/Microprocessor" title="Microprocessor">microprocessors</a>, <a href="/wiki/Microcontroller" title="Microcontroller">microcontrollers</a>, <a href="/wiki/Memory_chip" class="mw-redirect" title="Memory chip">memory chips</a> (including <a href="/wiki/Nonvolatile_BIOS_memory" title="Nonvolatile BIOS memory">CMOS BIOS</a>), and other <a href="/wiki/Digital_logic" class="mw-redirect" title="Digital logic">digital logic</a> circuits. CMOS technology is also used for <a href="/wiki/Analog_circuit" class="mw-redirect" title="Analog circuit">analog circuits</a> such as <a href="/wiki/Image_sensor" title="Image sensor">image sensors</a> (<a href="/wiki/CMOS_sensor" class="mw-redirect" title="CMOS sensor">CMOS sensors</a>), <a href="/wiki/Data_conversion" title="Data conversion">data converters</a>, <a href="/wiki/RF_circuit" class="mw-redirect" title="RF circuit">RF circuits</a> (<a href="/wiki/RF_CMOS" title="RF CMOS">RF CMOS</a>), and highly integrated <a href="/wiki/Transceiver" title="Transceiver">transceivers</a> for many types of communication. </p><p>In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by <a href="/wiki/Fairchild_Semiconductor" title="Fairchild Semiconductor">Fairchild Semiconductor</a>'s <a href="/wiki/Frank_Wanlass" title="Frank Wanlass">Frank Wanlass</a> and <a href="/wiki/Chih-Tang_Sah" title="Chih-Tang Sah">Chih-Tang Sah</a> at the <a href="/wiki/International_Solid-State_Circuits_Conference" title="International Solid-State Circuits Conference">International Solid-State Circuits Conference</a> in 1963. Wanlass later filed <a href="https://en.wikisource.org/wiki/United_States_patent_3356858" class="extiw" title="s:United States patent 3356858">US patent 3,356,858</a> for CMOS circuitry and it was granted in 1967. <a href="/wiki/RCA" title="RCA"><style data-mw-deduplicate="TemplateStyles:r1038841319">'"`UNIQ--templatestyles-00000004-QINU`"'</style><span class="rt-commentedText tooltip tooltip-dotted" title="Radio Corporation of America, now a defunct American electronics company established in 1919">RCA</span></a> commercialized the technology with the trademark "COS-MOS" in the late 1960s, forcing other manufacturers to find another name, leading to "CMOS" becoming the standard name for the technology by the early 1970s. CMOS overtook <a href="/wiki/NMOS_logic" title="NMOS logic">NMOS logic</a> as the dominant MOSFET fabrication process for <a href="/wiki/Very_large-scale_integration" class="mw-redirect" title="Very large-scale integration">very large-scale integration</a> (VLSI) chips in the 1980s, also replacing earlier <a href="/wiki/Transistor%E2%80%93transistor_logic" title="Transistor–transistor logic">transistor–transistor logic</a> (TTL) technology. CMOS has since remained the standard fabrication process for MOSFET <a href="/wiki/Semiconductor_device" title="Semiconductor device">semiconductor devices</a> in VLSI chips. As of 2011<sup class="plainlinks noexcerpt noprint asof-tag update" style="display:none;"><a class="external text" href="https://en.wikipedia.org/w/index.php?title=CMOS&action=edit">[update]</a></sup>, 99% of IC chips, including most <a href="/wiki/Digital_electronics" title="Digital electronics">digital</a>, <a href="/wiki/Analog_integrated_circuit" class="mw-redirect" title="Analog integrated circuit">analog</a> and <a href="/wiki/Mixed-signal" class="mw-redirect" title="Mixed-signal">mixed-signal</a> ICs, were fabricated using CMOS technology.<sup id="cite_ref-2" class="reference"><a href="#cite_note-2"><span class="cite-bracket">[</span>2<span class="cite-bracket">]</span></a></sup> </p><p>Two important characteristics of CMOS devices are high <a href="/wiki/Electronic_noise" class="mw-redirect" title="Electronic noise">noise immunity</a> and low static <a href="/wiki/Power_consumption" class="mw-redirect" title="Power consumption">power consumption</a>.<sup id="cite_ref-3" class="reference"><a href="#cite_note-3"><span class="cite-bracket">[</span>3<span class="cite-bracket">]</span></a></sup> Since one <a href="/wiki/Transistor" title="Transistor">transistor</a> of the MOSFET pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much <a href="/wiki/Waste_heat" title="Waste heat">waste heat</a> as other forms of logic, like <a href="/wiki/NMOS_logic" title="NMOS logic">NMOS logic</a> or <a href="/wiki/Transistor%E2%80%93transistor_logic" title="Transistor–transistor logic">transistor–transistor logic</a> (TTL), which normally have some standing current even when not changing state. These characteristics allow CMOS to integrate a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most widely used technology to be implemented in VLSI chips. </p><p>The phrase "metal–oxide–semiconductor" is a reference to the physical structure of MOS <a href="/wiki/Field-effect_transistor" title="Field-effect transistor">field-effect transistors</a>, having a <a href="/wiki/Metal_gate" title="Metal gate">metal gate</a> electrode placed on top of an oxide insulator, which in turn is on top of a <a href="/wiki/Semiconductor" title="Semiconductor">semiconductor material</a>. <a href="/wiki/Aluminium" title="Aluminium">Aluminium</a> was once used but now the material is <a href="/wiki/Polysilicon" class="mw-redirect" title="Polysilicon">polysilicon</a>. Other metal gates have made a comeback with the advent of <a href="/wiki/High-%CE%BA_dielectric" title="High-κ dielectric">high-κ dielectric</a> materials in the CMOS process, as announced by IBM and Intel for the <a href="/wiki/45_nanometer" class="mw-redirect" title="45 nanometer">45 nanometer</a> node and smaller sizes.<sup id="cite_ref-4" class="reference"><a href="#cite_note-4"><span class="cite-bracket">[</span>4<span class="cite-bracket">]</span></a></sup> </p> <meta property="mw:PageProp/toc" /> <div class="mw-heading mw-heading2"><h2 id="History">History</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=1" title="Edit section: History"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236090951"><div role="note" class="hatnote navigation-not-searchable">Further information: <a href="/wiki/MOSFET" title="MOSFET">MOSFET</a> and <a href="/wiki/Transistor_density" class="mw-redirect" title="Transistor density">Transistor density</a></div> <figure typeof="mw:File/Thumb"><a href="/wiki/File:1957(Figure_9)-Gate_oxide_transistor_by_Frosch_and_Derrick.png" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/7/75/1957%28Figure_9%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png/310px-1957%28Figure_9%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png" decoding="async" width="310" height="133" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/7/75/1957%28Figure_9%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png/465px-1957%28Figure_9%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/7/75/1957%28Figure_9%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png/620px-1957%28Figure_9%29-Gate_oxide_transistor_by_Frosch_and_Derrick.png 2x" data-file-width="841" data-file-height="361" /></a><figcaption>1957, Diagram of one of the SiO2 transistor devices made by Frosch and Derrick<sup id="cite_ref-5" class="reference"><a href="#cite_note-5"><span class="cite-bracket">[</span>5<span class="cite-bracket">]</span></a></sup></figcaption></figure> <p>The principle of complementary symmetry was first introduced by <a href="/wiki/George_Clifford_Sziklai" title="George Clifford Sziklai">George Sziklai</a> in 1953 who then discussed several complementary bipolar circuits. <a href="/wiki/Paul_K._Weimer" title="Paul K. Weimer">Paul Weimer</a>, also at <a href="/wiki/RCA" title="RCA">RCA</a>, invented in 1962 <a href="/wiki/Thin-film_transistor" title="Thin-film transistor">thin-film transistor</a> (TFT) complementary circuits, a close relative of CMOS. He invented complementary <a href="/wiki/Flip-flop_(electronics)" title="Flip-flop (electronics)">flip-flop</a> and inverter circuits, but did no work in a more complex complementary logic. He was the first person able to put p-channel and n-channel TFTs in a circuit on the same substrate. Three years earlier, <a href="/wiki/J._Torkel_Wallmark" title="J. Torkel Wallmark">John T. Wallmark</a> and Sanford M. Marcus published a variety of complex logic functions implemented as integrated circuits using <a href="/wiki/JFET" title="JFET">JFETs</a>, including complementary memory circuits. Frank Wanlass was familiar with work done by Weimer at RCA.<sup id="cite_ref-6" class="reference"><a href="#cite_note-6"><span class="cite-bracket">[</span>6<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-7" class="reference"><a href="#cite_note-7"><span class="cite-bracket">[</span>7<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-8" class="reference"><a href="#cite_note-8"><span class="cite-bracket">[</span>8<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-9" class="reference"><a href="#cite_note-9"><span class="cite-bracket">[</span>9<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-10" class="reference"><a href="#cite_note-10"><span class="cite-bracket">[</span>10<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-11" class="reference"><a href="#cite_note-11"><span class="cite-bracket">[</span>11<span class="cite-bracket">]</span></a></sup> </p><p>In 1955, <a href="/wiki/Carl_Frosch" title="Carl Frosch">Carl Frosch</a> and Lincoln Derick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects.<sup id="cite_ref-:0_12-0" class="reference"><a href="#cite_note-:0-12"><span class="cite-bracket">[</span>12<span class="cite-bracket">]</span></a></sup> By 1957 Frosch and Derrick, using masking and predeposition, were able to manufacture silicon dioxide transistors and showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer.<sup id="cite_ref-:0_12-1" class="reference"><a href="#cite_note-:0-12"><span class="cite-bracket">[</span>12<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-13" class="reference"><a href="#cite_note-13"><span class="cite-bracket">[</span>13<span class="cite-bracket">]</span></a></sup> J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides and fabricated a high quality Si/<a href="/wiki/Silicon_dioxide" title="Silicon dioxide">SiO<sub>2</sub></a> stack in 1960.<sup id="cite_ref-14" class="reference"><a href="#cite_note-14"><span class="cite-bracket">[</span>14<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-Deal_15-0" class="reference"><a href="#cite_note-Deal-15"><span class="cite-bracket">[</span>15<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-16" class="reference"><a href="#cite_note-16"><span class="cite-bracket">[</span>16<span class="cite-bracket">]</span></a></sup> </p> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:Threshold_formation_nowatermark.gif" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/4/43/Threshold_formation_nowatermark.gif/220px-Threshold_formation_nowatermark.gif" decoding="async" width="220" height="100" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/4/43/Threshold_formation_nowatermark.gif/330px-Threshold_formation_nowatermark.gif 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/4/43/Threshold_formation_nowatermark.gif/440px-Threshold_formation_nowatermark.gif 2x" data-file-width="722" data-file-height="328" /></a><figcaption>Simulation of formation of inversion channel (electron density) and attainment of <a href="/wiki/Threshold_voltage" title="Threshold voltage">threshold voltage</a> (IV) in a nanowire MOSFET. Threshold voltage for this device lies around 0.45 V.</figcaption></figure> <p>Following this research, <a href="/wiki/Mohamed_Atalla" class="mw-redirect" title="Mohamed Atalla">Mohamed Atalla</a> and <a href="/wiki/Dawon_Kahng" title="Dawon Kahng">Dawon Kahng</a> proposed a silicon MOS transistor in 1959<sup id="cite_ref-Bassett22_17-0" class="reference"><a href="#cite_note-Bassett22-17"><span class="cite-bracket">[</span>17<span class="cite-bracket">]</span></a></sup> and successfully demonstrated a working MOS device with their Bell Labs team in 1960.<sup id="cite_ref-18" class="reference"><a href="#cite_note-18"><span class="cite-bracket">[</span>18<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-19" class="reference"><a href="#cite_note-19"><span class="cite-bracket">[</span>19<span class="cite-bracket">]</span></a></sup> Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D'Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device.<sup id="cite_ref-20" class="reference"><a href="#cite_note-20"><span class="cite-bracket">[</span>20<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-21" class="reference"><a href="#cite_note-21"><span class="cite-bracket">[</span>21<span class="cite-bracket">]</span></a></sup> There were originally two types of MOSFET logic, <a href="/wiki/PMOS_logic" title="PMOS logic">PMOS</a> (<a href="/wiki/P-type_semiconductor" class="mw-redirect" title="P-type semiconductor">p-type</a> MOS) and <a href="/wiki/NMOS_logic" title="NMOS logic">NMOS</a> (<a href="/wiki/N-type_semiconductor" class="mw-redirect" title="N-type semiconductor">n-type</a> MOS).<sup id="cite_ref-22" class="reference"><a href="#cite_note-22"><span class="cite-bracket">[</span>22<span class="cite-bracket">]</span></a></sup> Both types were developed by Frosch and Derrick in 1957 at Bell Labs.<sup id="cite_ref-23" class="reference"><a href="#cite_note-23"><span class="cite-bracket">[</span>23<span class="cite-bracket">]</span></a></sup> </p><p>In 1948, Bardeen and Brattain patented the progenitor of MOSFET, an insulated-gate FET (IGFET) with an inversion layer. Bardeen's patent, and the concept of an inversion layer, forms the basis of CMOS technology today.<sup id="cite_ref-24" class="reference"><a href="#cite_note-24"><span class="cite-bracket">[</span>24<span class="cite-bracket">]</span></a></sup> A new type of MOSFET logic combining both the PMOS and NMOS processes was developed, called complementary MOS (CMOS), by Chih-Tang Sah and <a href="/wiki/Frank_Wanlass" title="Frank Wanlass">Frank Wanlass</a> at Fairchild. In February 1963, they published the invention in a <a href="/wiki/Academic_paper" class="mw-redirect" title="Academic paper">research paper</a>.<sup id="cite_ref-computerhistory1963_25-0" class="reference"><a href="#cite_note-computerhistory1963-25"><span class="cite-bracket">[</span>25<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-sah_26-0" class="reference"><a href="#cite_note-sah-26"><span class="cite-bracket">[</span>26<span class="cite-bracket">]</span></a></sup> In both the research paper and the <a href="/wiki/Patent" title="Patent">patent</a> filed by Wanlass, the fabrication of CMOS devices was outlined, on the basis of <a href="/wiki/Thermal_oxidation" title="Thermal oxidation">thermal oxidation</a> of a silicon substrate to yield a layer of <a href="/wiki/Silicon_dioxide" title="Silicon dioxide">silicon dioxide</a> located between the drain contact and the source contact.<sup id="cite_ref-27" class="reference"><a href="#cite_note-27"><span class="cite-bracket">[</span>27<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-sah_26-1" class="reference"><a href="#cite_note-sah-26"><span class="cite-bracket">[</span>26<span class="cite-bracket">]</span></a></sup> </p><p>CMOS was commercialised by <a href="/wiki/RCA" title="RCA">RCA</a> in the late 1960s. RCA adopted CMOS for the design of <a href="/wiki/Integrated_circuit" title="Integrated circuit">integrated circuits</a> (ICs), developing CMOS circuits for an <a href="/wiki/United_States_Air_Force" title="United States Air Force">Air Force</a> computer in 1965 and then a 288-<a href="/wiki/Bit" title="Bit">bit</a> CMOS <a href="/wiki/Static_random-access_memory" title="Static random-access memory">SRAM</a> memory chip in 1968.<sup id="cite_ref-computerhistory1963_25-1" class="reference"><a href="#cite_note-computerhistory1963-25"><span class="cite-bracket">[</span>25<span class="cite-bracket">]</span></a></sup> RCA also used CMOS for its <a href="/wiki/4000-series_integrated_circuits" title="4000-series integrated circuits">4000-series integrated circuits</a> in 1968, starting with a 20<span class="nowrap"> </span><a href="/wiki/%CE%9Cm" class="mw-redirect" title="Μm">μm</a> <a href="/wiki/Semiconductor_manufacturing_process" class="mw-redirect" title="Semiconductor manufacturing process">semiconductor manufacturing process</a> before gradually scaling to a <a href="/wiki/10_%CE%BCm_process" class="mw-redirect" title="10 μm process">10 μm process</a> over the next several years.<sup id="cite_ref-Lojek330_28-0" class="reference"><a href="#cite_note-Lojek330-28"><span class="cite-bracket">[</span>28<span class="cite-bracket">]</span></a></sup> </p><p>CMOS technology was initially overlooked by the American <a href="/wiki/Semiconductor_industry" title="Semiconductor industry">semiconductor industry</a> in favour of NMOS, which was more powerful at the time. However, CMOS was quickly adopted and further advanced by Japanese semiconductor manufacturers due to its low power consumption, leading to the rise of the Japanese semiconductor industry.<sup id="cite_ref-29" class="reference"><a href="#cite_note-29"><span class="cite-bracket">[</span>29<span class="cite-bracket">]</span></a></sup> <a href="/wiki/Toshiba" title="Toshiba">Toshiba</a> developed C<sup>2</sup>MOS (Clocked CMOS), a circuit technology with lower <a href="/wiki/Power_consumption" class="mw-redirect" title="Power consumption">power consumption</a> and faster operating speed than ordinary CMOS, in 1969. Toshiba used its C<sup>2</sup>MOS technology to develop a <a href="/wiki/Large-scale_integration" class="mw-redirect" title="Large-scale integration">large-scale integration</a> (LSI) chip for <a href="/wiki/Sharp_Corporation" title="Sharp Corporation">Sharp</a>'s Elsi Mini <a href="/wiki/LED" class="mw-redirect" title="LED">LED</a> <a href="/wiki/Pocket_calculator" class="mw-redirect" title="Pocket calculator">pocket calculator</a>, developed in 1971 and released in 1972.<sup id="cite_ref-30" class="reference"><a href="#cite_note-30"><span class="cite-bracket">[</span>30<span class="cite-bracket">]</span></a></sup> <a href="/wiki/Suwa_Seikosha" class="mw-redirect" title="Suwa Seikosha">Suwa Seikosha</a> (now <a href="/wiki/Seiko_Epson" class="mw-redirect" title="Seiko Epson">Seiko Epson</a>) began developing a CMOS IC chip for a <a href="/wiki/Seiko" title="Seiko">Seiko</a> <a href="/wiki/Quartz_watch" class="mw-redirect" title="Quartz watch">quartz watch</a> in 1969, and began mass-production with the launch of the <a href="/wiki/Seiko" title="Seiko">Seiko</a> Analog Quartz 38SQW watch in 1971.<sup id="cite_ref-31" class="reference"><a href="#cite_note-31"><span class="cite-bracket">[</span>31<span class="cite-bracket">]</span></a></sup> The first mass-produced CMOS consumer electronic product was the <a href="/wiki/Hamilton_Watch_Company" title="Hamilton Watch Company">Hamilton</a> Pulsar "Wrist Computer" digital watch, released in 1970.<sup id="cite_ref-computerhistory-digital_32-0" class="reference"><a href="#cite_note-computerhistory-digital-32"><span class="cite-bracket">[</span>32<span class="cite-bracket">]</span></a></sup> Due to low power consumption, CMOS logic has been widely used for <a href="/wiki/Calculators" class="mw-redirect" title="Calculators">calculators</a> and <a href="/wiki/Watches" class="mw-redirect" title="Watches">watches</a> since the 1970s.<sup id="cite_ref-shmj_33-0" class="reference"><a href="#cite_note-shmj-33"><span class="cite-bracket">[</span>33<span class="cite-bracket">]</span></a></sup> </p><p>The <a href="/wiki/Microprocessor_chronology" title="Microprocessor chronology">earliest microprocessors</a> in the early 1970s were PMOS processors, which initially dominated the early <a href="/wiki/Microprocessor" title="Microprocessor">microprocessor</a> industry. By the late 1970s, NMOS microprocessors had overtaken PMOS processors.<sup id="cite_ref-Kuhn_34-0" class="reference"><a href="#cite_note-Kuhn-34"><span class="cite-bracket">[</span>34<span class="cite-bracket">]</span></a></sup> CMOS microprocessors were introduced in 1975, with the <a href="/wiki/Intersil_6100" title="Intersil 6100">Intersil 6100</a>,<sup id="cite_ref-Kuhn_34-1" class="reference"><a href="#cite_note-Kuhn-34"><span class="cite-bracket">[</span>34<span class="cite-bracket">]</span></a></sup> and RCA <a href="/wiki/CDP_1801" class="mw-redirect" title="CDP 1801">CDP 1801</a>.<sup id="cite_ref-35" class="reference"><a href="#cite_note-35"><span class="cite-bracket">[</span>35<span class="cite-bracket">]</span></a></sup> However, CMOS processors did not become dominant until the 1980s.<sup id="cite_ref-Kuhn_34-2" class="reference"><a href="#cite_note-Kuhn-34"><span class="cite-bracket">[</span>34<span class="cite-bracket">]</span></a></sup> </p><p>CMOS was initially slower than <a href="/wiki/NMOS_logic" title="NMOS logic">NMOS logic</a>, thus NMOS was more widely used for computers in the 1970s.<sup id="cite_ref-shmj_33-1" class="reference"><a href="#cite_note-shmj-33"><span class="cite-bracket">[</span>33<span class="cite-bracket">]</span></a></sup> The <a href="/wiki/Intel" title="Intel">Intel</a> 5101 (1<span class="nowrap"> </span><a href="/wiki/Kibibit" class="mw-redirect" title="Kibibit">kb</a> <a href="/wiki/Static_random-access_memory" title="Static random-access memory">SRAM</a>) CMOS memory chip (1974) had an <a href="/wiki/Access_time" title="Access time">access time</a> of 800<span class="nowrap"> </span><a href="/wiki/Nanosecond" title="Nanosecond">ns</a>,<sup id="cite_ref-36" class="reference"><a href="#cite_note-36"><span class="cite-bracket">[</span>36<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-Intel-Product-Timeline_37-0" class="reference"><a href="#cite_note-Intel-Product-Timeline-37"><span class="cite-bracket">[</span>37<span class="cite-bracket">]</span></a></sup> whereas the fastest NMOS chip at the time, the Intel 2147 (4<span class="nowrap"> </span>kb SRAM) <a href="/wiki/HMOS" class="mw-redirect" title="HMOS">HMOS</a> memory chip (1976), had an access time of 55/70<span class="nowrap"> </span>ns.<sup id="cite_ref-shmj_33-2" class="reference"><a href="#cite_note-shmj-33"><span class="cite-bracket">[</span>33<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-Intel-Product-Timeline_37-1" class="reference"><a href="#cite_note-Intel-Product-Timeline-37"><span class="cite-bracket">[</span>37<span class="cite-bracket">]</span></a></sup> In 1978, a <a href="/wiki/Hitachi" title="Hitachi">Hitachi</a> research team led by Toshiaki Masuhara introduced the twin-well Hi-CMOS process, with its HM6147 (4<span class="nowrap"> </span>kb SRAM) memory chip, manufactured with a <a href="/wiki/3_%CE%BCm_process" title="3 μm process">3 μm process</a>.<sup id="cite_ref-shmj_33-3" class="reference"><a href="#cite_note-shmj-33"><span class="cite-bracket">[</span>33<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-38" class="reference"><a href="#cite_note-38"><span class="cite-bracket">[</span>38<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-39" class="reference"><a href="#cite_note-39"><span class="cite-bracket">[</span>39<span class="cite-bracket">]</span></a></sup> The Hitachi HM6147 chip was able to match the performance (55/70<span class="nowrap"> </span>ns access) of the Intel 2147 HMOS chip, while the HM6147 also consumed significantly less power (15<span class="nowrap"> </span><a href="/wiki/Milliamp" class="mw-redirect" title="Milliamp">mA</a>) than the 2147 (110<span class="nowrap"> </span>mA). With comparable performance and much less power consumption, the twin-well CMOS process eventually overtook NMOS as the most common <a href="/wiki/Semiconductor_manufacturing_process" class="mw-redirect" title="Semiconductor manufacturing process">semiconductor manufacturing process</a> for computers in the 1980s.<sup id="cite_ref-shmj_33-4" class="reference"><a href="#cite_note-shmj-33"><span class="cite-bracket">[</span>33<span class="cite-bracket">]</span></a></sup> </p><p>In the 1980s, CMOS microprocessors overtook NMOS microprocessors.<sup id="cite_ref-Kuhn_34-3" class="reference"><a href="#cite_note-Kuhn-34"><span class="cite-bracket">[</span>34<span class="cite-bracket">]</span></a></sup> <a href="/wiki/NASA" title="NASA">NASA</a>'s <a href="/wiki/Galileo_(spacecraft)" title="Galileo (spacecraft)">Galileo</a> spacecraft, sent to orbit <a href="/wiki/Jupiter" title="Jupiter">Jupiter</a> in 1989, used the <a href="/wiki/RCA_1802" title="RCA 1802">RCA 1802</a> CMOS microprocessor due to low power consumption.<sup id="cite_ref-computerhistory-digital_32-1" class="reference"><a href="#cite_note-computerhistory-digital-32"><span class="cite-bracket">[</span>32<span class="cite-bracket">]</span></a></sup> </p><p>Intel introduced a <a href="/wiki/1.5_%CE%BCm_process" title="1.5 μm process">1.5 μm process</a> for CMOS <a href="/wiki/Semiconductor_device_fabrication" title="Semiconductor device fabrication">semiconductor device fabrication</a> in 1983.<sup id="cite_ref-Gealow_40-0" class="reference"><a href="#cite_note-Gealow-40"><span class="cite-bracket">[</span>40<span class="cite-bracket">]</span></a></sup> In the mid-1980s, <a href="/wiki/Bijan_Davari" title="Bijan Davari">Bijan Davari</a> of <a href="/wiki/IBM" title="IBM">IBM</a> developed high-performance, low-voltage, <a href="/wiki/Nanoelectronics" title="Nanoelectronics">deep sub-micron</a> CMOS technology, which enabled the development of faster computers as well as <a href="/wiki/Mobile_computer" class="mw-redirect" title="Mobile computer">portable computers</a> and battery-powered <a href="/wiki/Handheld_electronics" class="mw-redirect" title="Handheld electronics">handheld electronics</a>.<sup id="cite_ref-recipients_41-0" class="reference"><a href="#cite_note-recipients-41"><span class="cite-bracket">[</span>41<span class="cite-bracket">]</span></a></sup> In 1988, Davari led an IBM team that demonstrated a high-performance <a href="/wiki/250_nanometer" class="mw-redirect" title="250 nanometer">250 nanometer</a> CMOS process.<sup id="cite_ref-Davari1988_42-0" class="reference"><a href="#cite_note-Davari1988-42"><span class="cite-bracket">[</span>42<span class="cite-bracket">]</span></a></sup> </p><p><a href="/wiki/Fujitsu" title="Fujitsu">Fujitsu</a> commercialized a 700<span class="nowrap"> </span><a href="/wiki/Nanometre" title="Nanometre">nm</a> CMOS process in 1987,<sup id="cite_ref-Gealow_40-1" class="reference"><a href="#cite_note-Gealow-40"><span class="cite-bracket">[</span>40<span class="cite-bracket">]</span></a></sup> and then Hitachi, <a href="/wiki/Mitsubishi_Electric" title="Mitsubishi Electric">Mitsubishi Electric</a>, <a href="/wiki/NEC" title="NEC">NEC</a> and Toshiba commercialized <a href="/w/index.php?title=500_nanometer&action=edit&redlink=1" class="new" title="500 nanometer (page does not exist)">500<span class="nowrap"> </span>nm</a> CMOS in 1989.<sup id="cite_ref-stol_43-0" class="reference"><a href="#cite_note-stol-43"><span class="cite-bracket">[</span>43<span class="cite-bracket">]</span></a></sup> In 1993, <a href="/wiki/Sony" title="Sony">Sony</a> commercialized a <a href="/wiki/350_nanometer" class="mw-redirect" title="350 nanometer">350<span class="nowrap"> </span>nm</a> CMOS process, while Hitachi and NEC commercialized <a href="/wiki/250_nanometer" class="mw-redirect" title="250 nanometer">250<span class="nowrap"> </span>nm</a> CMOS. Hitachi introduced a <a href="/wiki/180_nanometer" class="mw-redirect" title="180 nanometer">160<span class="nowrap"> </span>nm</a> CMOS process in 1995, then Mitsubishi introduced 150<span class="nowrap"> </span>nm CMOS in 1996, and then <a href="/wiki/Samsung_Electronics" title="Samsung Electronics">Samsung Electronics</a> introduced 140<span class="nowrap"> </span>nm in 1999.<sup id="cite_ref-stol_43-1" class="reference"><a href="#cite_note-stol-43"><span class="cite-bracket">[</span>43<span class="cite-bracket">]</span></a></sup> </p><p>In 2000, <a href="/wiki/Gurtej_Sandhu" title="Gurtej Sandhu">Gurtej Singh Sandhu</a> and Trung T. Doan at <a href="/wiki/Micron_Technology" title="Micron Technology">Micron Technology</a> invented <a href="/wiki/Atomic_layer_deposition" title="Atomic layer deposition">atomic layer deposition</a> <a href="/wiki/High-%CE%BA_dielectric" title="High-κ dielectric">High-κ dielectric</a> <a href="/wiki/Thin_film" title="Thin film">films</a>, leading to the development of a cost-effective <a href="/wiki/90_nm" class="mw-redirect" title="90 nm">90 nm</a> CMOS process.<sup id="cite_ref-recipients_41-1" class="reference"><a href="#cite_note-recipients-41"><span class="cite-bracket">[</span>41<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-44" class="reference"><a href="#cite_note-44"><span class="cite-bracket">[</span>44<span class="cite-bracket">]</span></a></sup> Toshiba and Sony developed a <a href="/wiki/65_nm" class="mw-redirect" title="65 nm">65 nm</a> CMOS process in 2002,<sup id="cite_ref-45" class="reference"><a href="#cite_note-45"><span class="cite-bracket">[</span>45<span class="cite-bracket">]</span></a></sup> and then <a href="/wiki/TSMC" title="TSMC">TSMC</a> initiated the development of <a href="/wiki/45_nm" class="mw-redirect" title="45 nm">45 nm</a> CMOS logic in 2004.<sup id="cite_ref-46" class="reference"><a href="#cite_note-46"><span class="cite-bracket">[</span>46<span class="cite-bracket">]</span></a></sup> The development of pitch <a href="/wiki/Double_patterning" class="mw-redirect" title="Double patterning">double patterning</a> by Gurtej Singh Sandhu at Micron Technology led to the development of <a href="/wiki/32_nanometer" class="mw-redirect" title="32 nanometer">30<span class="nowrap"> </span>nm</a> class CMOS in the 2000s.<sup id="cite_ref-recipients_41-2" class="reference"><a href="#cite_note-recipients-41"><span class="cite-bracket">[</span>41<span class="cite-bracket">]</span></a></sup> </p><p>CMOS is used in most modern LSI and <a href="/wiki/VLSI" class="mw-redirect" title="VLSI">VLSI</a> devices.<sup id="cite_ref-shmj_33-5" class="reference"><a href="#cite_note-shmj-33"><span class="cite-bracket">[</span>33<span class="cite-bracket">]</span></a></sup> As of 2010, <a href="/wiki/CPUs" class="mw-redirect" title="CPUs">CPUs</a> with the best <a href="/wiki/Performance_per_watt" title="Performance per watt">performance per watt</a> each year have been CMOS <a href="/wiki/Static_logic_(digital_logic)" class="mw-redirect" title="Static logic (digital logic)">static logic</a> since 1976.<sup class="noprint Inline-Template Template-Fact" style="white-space:nowrap;">[<i><a href="/wiki/Wikipedia:Citation_needed" title="Wikipedia:Citation needed"><span title="This claim needs references to reliable sources. (August 2010)">citation needed</span></a></i>]</sup> As of 2019, planar CMOS technology is still the most common form of semiconductor device fabrication, but is gradually being replaced by non-planar <a href="/wiki/FinFET" class="mw-redirect" title="FinFET">FinFET</a> technology, which is capable of manufacturing <a href="/wiki/Semiconductor_node" class="mw-redirect" title="Semiconductor node">semiconductor nodes</a> smaller than <a href="/wiki/14_nm_process" title="14 nm process">20<span class="nowrap"> </span>nm</a>.<sup id="cite_ref-47" class="reference"><a href="#cite_note-47"><span class="cite-bracket">[</span>47<span class="cite-bracket">]</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Technical_details">Technical details</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=2" title="Edit section: Technical details"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236090951"><div role="note" class="hatnote navigation-not-searchable">Further information: <a href="/wiki/Semiconductor_manufacturing_processes" class="mw-redirect" title="Semiconductor manufacturing processes">Semiconductor manufacturing processes</a></div> <p>"CMOS" refers to both a particular style of digital circuitry design and the family of processes used to implement that circuitry on integrated circuits (chips). CMOS circuitry dissipates <a href="/wiki/Low-power_electronics" title="Low-power electronics">less power</a> than <a href="/wiki/Logic_family" title="Logic family">logic families</a> with resistive loads. Since this advantage has increased and grown more important, CMOS processes and variants have come to dominate, thus the vast majority of modern integrated circuit manufacturing is on CMOS processes.<sup id="cite_ref-48" class="reference"><a href="#cite_note-48"><span class="cite-bracket">[</span>48<span class="cite-bracket">]</span></a></sup> CMOS logic consumes around one seventh the power of <a href="/wiki/NMOS_logic" title="NMOS logic">NMOS logic</a>,<sup id="cite_ref-shmj_33-6" class="reference"><a href="#cite_note-shmj-33"><span class="cite-bracket">[</span>33<span class="cite-bracket">]</span></a></sup> and about 10 million times less power than bipolar <a href="/wiki/Transistor-transistor_logic" class="mw-redirect" title="Transistor-transistor logic">transistor-transistor logic</a> (TTL).<sup id="cite_ref-49" class="reference"><a href="#cite_note-49"><span class="cite-bracket">[</span>49<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-50" class="reference"><a href="#cite_note-50"><span class="cite-bracket">[</span>50<span class="cite-bracket">]</span></a></sup> </p><p>CMOS circuits use a combination of p-type and n-type <a href="/wiki/MOSFET" title="MOSFET">metal–oxide–semiconductor field-effect transistor</a> (MOSFETs) to implement <a href="/wiki/Logic_gate" title="Logic gate">logic gates</a> and other digital circuits. Although CMOS logic can be implemented with discrete devices for demonstrations, commercial CMOS products are integrated circuits composed of up to billions of transistors of both types, on a rectangular piece of <a href="/wiki/Silicon" title="Silicon">silicon</a> of often between 10 and 400 mm<sup>2</sup>.<sup class="noprint Inline-Template Template-Fact" style="white-space:nowrap;">[<i><a href="/wiki/Wikipedia:Citation_needed" title="Wikipedia:Citation needed"><span title="This claim needs references to reliable sources. (November 2021)">citation needed</span></a></i>]</sup> </p><p>CMOS always uses all <a href="/wiki/Enhancement-mode" class="mw-redirect" title="Enhancement-mode">enhancement-mode</a> MOSFETs (in other words, a zero gate-to-source voltage turns the transistor off).<sup id="cite_ref-51" class="reference"><a href="#cite_note-51"><span class="cite-bracket">[</span>51<span class="cite-bracket">]</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Inversion">Inversion</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=3" title="Edit section: Inversion"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>CMOS circuits are constructed in such a way that all <a href="/wiki/PMOS_logic" title="PMOS logic">P-type metal–oxide–semiconductor</a> (PMOS) transistors must have either an input from the voltage source or from another PMOS transistor. Similarly, all <a href="/wiki/NMOS_logic" title="NMOS logic">NMOS</a> transistors must have either an input from ground or from another NMOS transistor. The composition of a PMOS transistor creates low <a href="/wiki/Electrical_resistance" class="mw-redirect" title="Electrical resistance">resistance</a> between its source and drain contacts when a low gate <a href="/wiki/Voltage" title="Voltage">voltage</a> is applied and high resistance when a high gate voltage is applied. On the other hand, the composition of an NMOS transistor creates high resistance between source and drain when a low gate voltage is applied and low resistance when a high gate voltage is applied. CMOS accomplishes current reduction by complementing every nMOSFET with a pMOSFET and connecting both gates and both drains together. A high voltage on the gates will cause the nMOSFET to conduct and the pMOSFET not to conduct, while a low voltage on the gates causes the reverse. This arrangement greatly reduces power consumption and heat generation. However, during the switching time, both pMOS and nMOS MOSFETs conduct briefly as the gate voltage transitions from one state to another. This induces a brief spike in power consumption and becomes a serious issue at high frequencies. </p> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:CMOS_Inverter.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/8/81/CMOS_Inverter.svg/220px-CMOS_Inverter.svg.png" decoding="async" width="220" height="220" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/8/81/CMOS_Inverter.svg/330px-CMOS_Inverter.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/8/81/CMOS_Inverter.svg/440px-CMOS_Inverter.svg.png 2x" data-file-width="250" data-file-height="250" /></a><figcaption>Static CMOS inverter. <b>V<sub>dd</sub></b> and <b>V<sub>ss</sub></b> stand for <a href="/wiki/IC_power-supply_pin" title="IC power-supply pin">drain and source</a>, respectively.</figcaption></figure> <p>The adjacent image shows what happens when an input is connected to both a PMOS transistor (top of diagram) and an NMOS transistor (bottom of diagram). Vdd is some positive voltage connected to a power supply and Vss is ground. A is the input and Q is the output. </p><p>When the voltage of A is low (i.e. close to Vss), the NMOS transistor's channel is in a high resistance state, disconnecting Vss from Q. The PMOS transistor's channel is in a low resistance state, connecting Vdd to Q. Q, therefore, registers Vdd. </p><p>On the other hand, when the voltage of A is high (i.e. close to Vdd), the PMOS transistor is in a high resistance state, disconnecting Vdd from Q. The NMOS transistor is in a low resistance state, connecting Vss to Q. Now, Q registers Vss. </p><p>In short, the outputs of the PMOS and NMOS transistors are complementary such that when the input is low, the output is high, and when the input is high, the output is low. No matter what the input is, the output is never left floating (charge is never stored due to wire capacitance and lack of electrical drain/ground). Because of this behavior of input and output, the CMOS circuit's output is the inverse of the input. </p><p>The transistors' resistances are never exactly equal to zero or infinity, so Q will never exactly equal Vss or Vdd, but Q will always be closer to Vss than A was to Vdd (or vice versa if A were close to Vss). Without this amplification, there would be a very low limit to the number of logic gates that could be chained together in series, and CMOS logic with billions of transistors would be impossible. </p> <div class="mw-heading mw-heading3"><h3 id="Power_supply_pins">Power supply pins</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=4" title="Edit section: Power supply pins"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236090951"><div role="note" class="hatnote navigation-not-searchable">See also: <a href="/wiki/IC_power-supply_pin" title="IC power-supply pin">IC power-supply pin</a></div> <p>The power supply pins for CMOS are called V<sub>DD</sub> and V<sub>SS</sub>, or V<sub>CC</sub> and Ground(GND) depending on the manufacturer. V<sub>DD</sub> and V<sub>SS</sub> are carryovers from conventional MOS circuits and stand for the <i>drain</i> and <i>source</i> supplies.<sup id="cite_ref-52" class="reference"><a href="#cite_note-52"><span class="cite-bracket">[</span>52<span class="cite-bracket">]</span></a></sup> These do not apply directly to CMOS, since both supplies are really source supplies. V<sub>CC</sub> and Ground are carryovers from <a href="/wiki/TTL_logic" class="mw-redirect" title="TTL logic">TTL logic</a> and that nomenclature has been retained with the introduction of the 54C/74C line of CMOS. </p> <div class="mw-heading mw-heading3"><h3 id="Duality">Duality</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=5" title="Edit section: Duality"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>An important characteristic of a CMOS circuit is the duality that exists between its PMOS transistors and NMOS transistors. A CMOS circuit is created to allow a path always to exist from the output to either the power source or ground. To accomplish this, the set of all paths to the voltage source must be the <a href="/wiki/Complement_(set_theory)#Logical_complement" title="Complement (set theory)">complement</a> of the set of all paths to ground. This can be easily accomplished by defining one in terms of the NOT of the other. Due to the logic based on <a href="/wiki/De_Morgan%27s_laws" title="De Morgan's laws">De Morgan's laws</a>, the PMOS transistors in parallel have corresponding NMOS transistors in series while the PMOS transistors in series have corresponding NMOS transistors in parallel. </p> <div class="mw-heading mw-heading3"><h3 id="Logic">Logic</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=6" title="Edit section: Logic"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:CMOS_NAND.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/e/e2/CMOS_NAND.svg/170px-CMOS_NAND.svg.png" decoding="async" width="170" height="277" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/e/e2/CMOS_NAND.svg/255px-CMOS_NAND.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/e/e2/CMOS_NAND.svg/340px-CMOS_NAND.svg.png 2x" data-file-width="310" data-file-height="505" /></a><figcaption><a href="/wiki/NAND_gate" title="NAND gate">NAND gate</a> in CMOS logic</figcaption></figure> <p>More complex logic functions such as those involving <a href="/wiki/AND_gate" title="AND gate">AND</a> and <a href="/wiki/OR_gate" title="OR gate">OR gates</a> require manipulating the paths between gates to represent the logic. When a path consists of two transistors in series, both transistors must have low resistance to the corresponding supply voltage, modelling an AND. When a path consists of two transistors in parallel, either one or both of the transistors must have low resistance to connect the supply voltage to the output, modelling an OR. </p><p>Shown on the right is a <a href="/wiki/Circuit_diagram" title="Circuit diagram">circuit diagram</a> of a <a href="/wiki/NAND_gate" title="NAND gate">NAND gate</a> in CMOS logic. If both of the A and B inputs are high, then both the NMOS transistors (bottom half of the diagram) will conduct, neither of the PMOS transistors (top half) will conduct, and a conductive path will be established between the output and <i>V</i><sub>ss</sub> (ground), bringing the output low. If both of the A and B inputs are low, then neither of the NMOS transistors will conduct, while both of the PMOS transistors will conduct, establishing a conductive path between the output and <i>V</i><sub>dd</sub> (voltage source), bringing the output high. If either of the A or B inputs is low, one of the NMOS transistors will not conduct, one of the PMOS transistors will, and a conductive path will be established between the output and <i>V</i><sub>dd</sub> (voltage source), bringing the output high. As the only configuration of the two inputs that results in a low output is when both are high, this circuit implements a <a href="/wiki/NAND_gate" title="NAND gate">NAND</a> (NOT AND) logic gate. </p><p>An advantage of CMOS over NMOS logic is that both low-to-high and high-to-low output transitions are fast since the (PMOS) pull-up transistors have low resistance when switched on, unlike the load resistors in NMOS logic. In addition, the output signal swings the full <a href="/wiki/Voltage" title="Voltage">voltage</a> between the low and high rails. This strong, more nearly symmetric response also makes CMOS more resistant to noise. </p><p>See <a href="/wiki/Logical_effort" title="Logical effort">Logical effort</a> for a method of calculating delay in a CMOS circuit. </p> <div class="mw-heading mw-heading3"><h3 id="Example:_NAND_gate_in_physical_layout">Example: NAND gate in physical layout</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=7" title="Edit section: Example: NAND gate in physical layout"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:CMOS_NAND_Layout.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/8/8f/CMOS_NAND_Layout.svg/170px-CMOS_NAND_Layout.svg.png" decoding="async" width="170" height="339" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/8/8f/CMOS_NAND_Layout.svg/255px-CMOS_NAND_Layout.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/8/8f/CMOS_NAND_Layout.svg/340px-CMOS_NAND_Layout.svg.png 2x" data-file-width="294" data-file-height="587" /></a><figcaption>The <a href="/wiki/Physical_layout" class="mw-redirect" title="Physical layout">physical layout</a> of a NAND circuit. The larger regions of N-type diffusion and P-type diffusion are part of the transistors. The two smaller regions on the left are taps to prevent <a href="/wiki/Latchup" class="mw-redirect" title="Latchup">latchup</a>. </figcaption></figure> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:CMOS_fabrication_process.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/5/57/CMOS_fabrication_process.svg/170px-CMOS_fabrication_process.svg.png" decoding="async" width="170" height="723" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/5/57/CMOS_fabrication_process.svg/255px-CMOS_fabrication_process.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/5/57/CMOS_fabrication_process.svg/340px-CMOS_fabrication_process.svg.png 2x" data-file-width="512" data-file-height="2176" /></a><figcaption>Simplified process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. In step 1, <a href="/wiki/Silicon_dioxide" title="Silicon dioxide">silicon dioxide</a> layers are formed initially through <a href="/wiki/Thermal_oxidation" title="Thermal oxidation">thermal oxidation</a> Note: Gate, source and drain contacts are not normally in the same plane in real devices, and the diagram is not to scale.</figcaption></figure> <p>This example shows a <a href="/wiki/Logical_NAND" class="mw-redirect" title="Logical NAND">NAND</a> logic device drawn as a physical representation as it would be manufactured. The physical layout perspective is a "bird's eye view" of a stack of layers. The circuit is constructed on a <a href="/wiki/Extrinsic_semiconductor#P-type_semiconductors" title="Extrinsic semiconductor">P-type</a> substrate. The <a href="/wiki/Polysilicon" class="mw-redirect" title="Polysilicon">polysilicon</a>, diffusion, and n-well are referred to as "base layers" and are actually inserted into trenches of the P-type substrate. (See steps 1 to 6 in the process diagram below right) The contacts penetrate an insulating layer between the base layers and the first layer of metal (metal1) making a connection. </p><p>The inputs to the <a href="/wiki/NAND_gate" title="NAND gate">NAND</a> (illustrated in green color) are in polysilicon. The transistors (devices) are formed by the intersection of the polysilicon and diffusion; N diffusion for the N device & P diffusion for the P device (illustrated in salmon and yellow coloring respectively). The output ("out") is connected together in metal (illustrated in cyan coloring). Connections between metal and polysilicon or diffusion are made through contacts (illustrated as black squares). The <a href="/wiki/Physical_layout" class="mw-redirect" title="Physical layout">physical layout</a> example matches the NAND logic circuit given in the previous example. </p><p>The N device is manufactured on a P-type substrate while the P device is manufactured in an <a href="/wiki/Extrinsic_semiconductor#N-type_semiconductors" title="Extrinsic semiconductor">N-type</a> well (n-well). A P-type substrate "tap" is connected to V<sub>SS</sub> and an N-type n-well tap is connected to V<sub>DD</sub> to prevent <a href="/wiki/Latchup" class="mw-redirect" title="Latchup">latchup</a>. </p> <figure class="mw-halign-center" typeof="mw:File/Thumb"><a href="/wiki/File:Cmos_impurity_profile-en.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/a/a5/Cmos_impurity_profile-en.svg/500px-Cmos_impurity_profile-en.svg.png" decoding="async" width="500" height="192" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/a/a5/Cmos_impurity_profile-en.svg/750px-Cmos_impurity_profile-en.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/a/a5/Cmos_impurity_profile-en.svg/1000px-Cmos_impurity_profile-en.svg.png 2x" data-file-width="926" data-file-height="355" /></a><figcaption>Cross section of two transistors in a CMOS gate, in an N-well CMOS process</figcaption></figure> <div class="mw-heading mw-heading2"><h2 id="Power:_switching_and_leakage">Power: switching and leakage</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=8" title="Edit section: Power: switching and leakage"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>CMOS logic dissipates less power than NMOS logic circuits because CMOS dissipates power only when switching ("dynamic power"). On a typical <a href="/wiki/Application-specific_integrated_circuit" title="Application-specific integrated circuit">ASIC</a> in a modern <a href="/wiki/90_nanometer" class="mw-redirect" title="90 nanometer">90 nanometer</a> process, switching the output might take 120 picoseconds, and happens once every ten nanoseconds. NMOS logic dissipates power whenever the transistor is on, because there is a current path from V<sub>dd</sub> to V<sub>ss</sub> through the load resistor and the n-type network. </p><p>Static CMOS gates are very power efficient because they dissipate nearly zero power when idle. Earlier, the power consumption of CMOS devices was not the major concern while designing chips. Factors like speed and area dominated the design parameters. As the CMOS technology moved below sub-micron levels the power consumption per unit area of the chip has risen tremendously. </p><p>Broadly classifying, power dissipation in CMOS circuits occurs because of two components, static and dynamic: </p> <div class="mw-heading mw-heading3"><h3 id="Static_dissipation">Static dissipation</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=9" title="Edit section: Static dissipation"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>Both NMOS and PMOS transistors have a gate–source <a href="/wiki/Threshold_voltage" title="Threshold voltage">threshold voltage</a> (V<sub>th</sub>), below which the current (called <i>sub threshold</i> current) through the device will drop exponentially. Historically, CMOS circuits operated at supply voltages much larger than their threshold voltages (V<sub>dd</sub> might have been 5 V, and V<sub>th</sub> for both NMOS and PMOS might have been 700 mV). A special type of the transistor used in some CMOS circuits is the <a href="/wiki/Native_transistor" title="Native transistor">native transistor</a>, with near zero <a href="/wiki/Threshold_voltage" title="Threshold voltage">threshold voltage</a>. </p><p>SiO<sub>2</sub> is a good insulator, but at very small thickness levels electrons can tunnel across the very thin insulation; the probability drops off exponentially with oxide thickness. Tunnelling current becomes very important for transistors below 130 nm technology with gate oxides of 20 Å or thinner. </p><p>Small reverse leakage currents are formed due to formation of reverse bias between diffusion regions and wells (for e.g., p-type diffusion vs. n-well), wells and substrate (for e.g., n-well vs. p-substrate). In modern process diode leakage is very small compared to sub threshold and tunnelling currents, so these may be neglected during power calculations. </p><p>If the ratios do not match, then there might be different currents of PMOS and NMOS; this may lead to imbalance and thus improper current causes the CMOS to heat up and dissipate power unnecessarily. Furthermore, recent studies have shown that leakage power reduces due to aging effects as a trade-off for devices to become slower.<sup id="cite_ref-53" class="reference"><a href="#cite_note-53"><span class="cite-bracket">[</span>53<span class="cite-bracket">]</span></a></sup> </p><p>To speed up designs, manufacturers have switched to constructions that have lower voltage thresholds but because of this a modern NMOS transistor with a V<sub>th</sub> of 200 mV has a significant <a href="/wiki/Subthreshold_leakage" class="mw-redirect" title="Subthreshold leakage">subthreshold leakage</a> current. Designs (e.g. desktop processors) which include vast numbers of circuits which are not actively switching still consume power because of this leakage current. Leakage power is a significant portion of the total power consumed by such designs. <a href="/wiki/Multi-threshold_CMOS" title="Multi-threshold CMOS">Multi-threshold CMOS</a> (MTCMOS), now available from foundries, is one approach to managing leakage power. With MTCMOS, high V<sub>th</sub> transistors are used when switching speed is not critical, while low V<sub>th</sub> transistors are used in speed sensitive paths. Further technology advances that use even thinner gate dielectrics have an additional <a href="/wiki/Leakage_(electronics)" title="Leakage (electronics)">leakage</a> component because of current <a href="/wiki/Quantum_tunnelling" title="Quantum tunnelling">tunnelling</a> through the extremely thin gate dielectric. Using <a href="/wiki/High-%CE%BA_dielectric" title="High-κ dielectric">high-κ dielectrics</a> instead of <a href="/wiki/Silicon_dioxide" title="Silicon dioxide">silicon dioxide</a> that is the conventional gate dielectric allows similar device performance, but with a thicker gate insulator, thus avoiding this current. Leakage power reduction using new material and system designs is critical to sustaining scaling of CMOS.<sup id="cite_ref-54" class="reference"><a href="#cite_note-54"><span class="cite-bracket">[</span>54<span class="cite-bracket">]</span></a></sup> </p> <div class="mw-heading mw-heading3"><h3 id="Dynamic_dissipation">Dynamic dissipation</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=10" title="Edit section: Dynamic dissipation"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <div class="mw-heading mw-heading4"><h4 id="Charging_and_discharging_of_load_capacitances">Charging and discharging of load capacitances</h4><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=11" title="Edit section: Charging and discharging of load capacitances"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>CMOS circuits dissipate power by charging the various load capacitances (mostly gate and wire capacitance, but also drain and some source capacitances) whenever they are switched. In one complete cycle of CMOS logic, current flows from V<sub>DD</sub> to the load capacitance to charge it and then flows from the charged load capacitance (C<sub>L</sub>) to ground during discharge. Therefore, in one complete charge/discharge cycle, a total of Q=C<sub>L</sub>V<sub>DD</sub> is thus transferred from V<sub>DD</sub> to ground. Multiply by the switching frequency on the load capacitances to get the current used, and multiply by the average voltage again to get the characteristic switching power dissipated by a CMOS device: <span class="mwe-math-element"><span class="mwe-math-mathml-inline mwe-math-mathml-a11y" style="display: none;"><math xmlns="http://www.w3.org/1998/Math/MathML" alttext="{\displaystyle P=0.5CV^{2}f}"> <semantics> <mrow class="MJX-TeXAtom-ORD"> <mstyle displaystyle="true" scriptlevel="0"> <mi>P</mi> <mo>=</mo> <mn>0.5</mn> <mi>C</mi> <msup> <mi>V</mi> <mrow class="MJX-TeXAtom-ORD"> <mn>2</mn> </mrow> </msup> <mi>f</mi> </mstyle> </mrow> <annotation encoding="application/x-tex">{\displaystyle P=0.5CV^{2}f}</annotation> </semantics> </math></span><img src="https://wikimedia.org/api/rest_v1/media/math/render/svg/d3eeee68491e62fe8a9ce96b8678cd72ea529b88" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -0.671ex; width:13.832ex; height:3.009ex;" alt="{\displaystyle P=0.5CV^{2}f}"></span>. </p><p>Since most gates do not operate/switch at every <a href="/wiki/Clock_signal" title="Clock signal">clock cycle</a>, they are often accompanied by a factor <span class="mwe-math-element"><span class="mwe-math-mathml-inline mwe-math-mathml-a11y" style="display: none;"><math xmlns="http://www.w3.org/1998/Math/MathML" alttext="{\displaystyle \alpha }"> <semantics> <mrow class="MJX-TeXAtom-ORD"> <mstyle displaystyle="true" scriptlevel="0"> <mi>α</mi> </mstyle> </mrow> <annotation encoding="application/x-tex">{\displaystyle \alpha }</annotation> </semantics> </math></span><img src="https://wikimedia.org/api/rest_v1/media/math/render/svg/b79333175c8b3f0840bfb4ec41b8072c83ea88d3" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -0.338ex; width:1.488ex; height:1.676ex;" alt="{\displaystyle \alpha }"></span>, called the activity factor. Now, the dynamic power dissipation may be re-written as <span class="mwe-math-element"><span class="mwe-math-mathml-inline mwe-math-mathml-a11y" style="display: none;"><math xmlns="http://www.w3.org/1998/Math/MathML" alttext="{\displaystyle P=\alpha CV^{2}f}"> <semantics> <mrow class="MJX-TeXAtom-ORD"> <mstyle displaystyle="true" scriptlevel="0"> <mi>P</mi> <mo>=</mo> <mi>α</mi> <mi>C</mi> <msup> <mi>V</mi> <mrow class="MJX-TeXAtom-ORD"> <mn>2</mn> </mrow> </msup> <mi>f</mi> </mstyle> </mrow> <annotation encoding="application/x-tex">{\displaystyle P=\alpha CV^{2}f}</annotation> </semantics> </math></span><img src="https://wikimedia.org/api/rest_v1/media/math/render/svg/ade0b18012db36acfc725518b0c4d79d2f62feac" class="mwe-math-fallback-image-inline mw-invert skin-invert" aria-hidden="true" style="vertical-align: -0.671ex; width:12.348ex; height:3.009ex;" alt="{\displaystyle P=\alpha CV^{2}f}"></span>. </p><p>A clock in a system has an activity factor α=1, since it rises and falls every cycle. Most data has an activity factor of 0.1.<sup id="cite_ref-55" class="reference"><a href="#cite_note-55"><span class="cite-bracket">[</span>55<span class="cite-bracket">]</span></a></sup> If correct load capacitance is estimated on a node together with its activity factor, the dynamic power dissipation at that node can be calculated effectively. </p> <div class="mw-heading mw-heading4"><h4 id="Short-circuit_power">Short-circuit power</h4><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=12" title="Edit section: Short-circuit power"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>Since there is a finite rise/fall time for both pMOS and nMOS, during transition, for example, from off to on, both the transistors will be on for a small period of time in which current will find a path directly from V<sub>DD</sub> to ground, hence creating a <a href="/wiki/Short-circuit_current" class="mw-redirect" title="Short-circuit current">short-circuit current</a>, sometimes called a <i>crowbar</i> current. Short-circuit power dissipation increases with the rise and fall time of the transistors. </p><p>This form of power consumption became significant in the 1990s as wires on chip became narrower and the long wires became more resistive. CMOS gates at the end of those resistive wires see slow input transitions. Careful design which avoids weakly driven long skinny wires reduces this effect, but crowbar power can be a substantial part of dynamic CMOS power. </p> <div class="mw-heading mw-heading2"><h2 id="Input_protection">Input protection</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=13" title="Edit section: Input protection"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>Parasitic transistors that are inherent in the CMOS structure may be turned on by input signals outside the normal operating range, e.g. <a href="/wiki/Electrostatic_discharge" title="Electrostatic discharge">electrostatic discharges</a> or <a href="/wiki/Reflections_of_signals_on_conducting_lines" title="Reflections of signals on conducting lines">line reflections</a>. The resulting <a href="/wiki/Latch-up" title="Latch-up">latch-up</a> may damage or destroy the CMOS device. Clamp diodes are included in CMOS circuits to deal with these signals. Manufacturers' data sheets specify the maximum permitted current that may flow through the diodes. </p> <div class="mw-heading mw-heading2"><h2 id="Analog_CMOS">Analog CMOS</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=14" title="Edit section: Analog CMOS"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236090951"><div role="note" class="hatnote navigation-not-searchable">Further information: <a href="/wiki/CMOS_amplifier" title="CMOS amplifier">CMOS amplifier</a> and <a href="/wiki/Mixed-signal_integrated_circuit" title="Mixed-signal integrated circuit">Mixed-signal integrated circuit</a></div> <p>Besides digital applications, CMOS technology is also used in <a href="/wiki/Analogue_electronics" title="Analogue electronics">analog</a> applications. For example, there are CMOS <a href="/wiki/Operational_amplifier" title="Operational amplifier">operational amplifier</a> ICs available in the market. <a href="/wiki/Transmission_gate" title="Transmission gate">Transmission gates</a> may be used as analog <a href="/wiki/Multiplexers" class="mw-redirect" title="Multiplexers">multiplexers</a> instead of signal <a href="/wiki/Relay" title="Relay">relays</a>. CMOS technology is also widely used for <a href="/wiki/Radio_frequency" title="Radio frequency">RF</a> circuits all the way to microwave frequencies, in <a href="/wiki/Mixed-signal_integrated_circuit" title="Mixed-signal integrated circuit">mixed-signal</a> (analog+digital) applications.<sup class="noprint Inline-Template Template-Fact" style="white-space:nowrap;">[<i><a href="/wiki/Wikipedia:Citation_needed" title="Wikipedia:Citation needed"><span title="This claim needs references to reliable sources. (January 2016)">citation needed</span></a></i>]</sup> </p> <div class="mw-heading mw-heading3"><h3 id="RF_CMOS">RF CMOS</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=15" title="Edit section: RF CMOS"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236090951"><div role="note" class="hatnote navigation-not-searchable">Main article: <a href="/wiki/RF_CMOS" title="RF CMOS">RF CMOS</a></div> <p>RF CMOS refers to <a href="/wiki/RF_circuit" class="mw-redirect" title="RF circuit">RF circuits</a> (<a href="/wiki/Radio_frequency" title="Radio frequency">radio frequency</a> circuits) which are based on <a href="/wiki/Mixed-signal_integrated_circuit" title="Mixed-signal integrated circuit">mixed-signal</a> <a href="/wiki/MOS_integrated_circuit" class="mw-redirect" title="MOS integrated circuit">CMOS integrated circuit</a> technology. They are widely used in <a href="/wiki/Wireless_telecommunication" class="mw-redirect" title="Wireless telecommunication">wireless telecommunication</a> technology. RF CMOS was developed by <a href="/wiki/Asad_Abidi" title="Asad Abidi">Asad Abidi</a> while working at <a href="/wiki/UCLA" class="mw-redirect" title="UCLA">UCLA</a> in the late 1980s. This changed the way in which RF circuits were designed, leading to the replacement of discrete <a href="/wiki/Bipolar_transistors" class="mw-redirect" title="Bipolar transistors">bipolar transistors</a> with CMOS integrated circuits in <a href="/wiki/Radio" title="Radio">radio</a> <a href="/wiki/Transceivers" class="mw-redirect" title="Transceivers">transceivers</a>.<sup id="cite_ref-O'Neill_56-0" class="reference"><a href="#cite_note-O'Neill-56"><span class="cite-bracket">[</span>56<span class="cite-bracket">]</span></a></sup> It enabled sophisticated, low-cost and portable <a href="/wiki/End-user" class="mw-redirect" title="End-user">end-user</a> terminals, and gave rise to small, low-cost, low-power and portable units for a wide range of wireless communication systems. This enabled "anytime, anywhere" communication and helped bring about the <a href="/wiki/Wireless_revolution" class="mw-redirect" title="Wireless revolution">wireless revolution</a>, leading to the rapid growth of the wireless industry.<sup id="cite_ref-57" class="reference"><a href="#cite_note-57"><span class="cite-bracket">[</span>57<span class="cite-bracket">]</span></a></sup> </p><p>The <a href="/wiki/Baseband_processor" title="Baseband processor">baseband processors</a><sup id="cite_ref-58" class="reference"><a href="#cite_note-58"><span class="cite-bracket">[</span>58<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-59" class="reference"><a href="#cite_note-59"><span class="cite-bracket">[</span>59<span class="cite-bracket">]</span></a></sup> and radio transceivers in all modern <a href="/wiki/Wireless_networking" class="mw-redirect" title="Wireless networking">wireless networking</a> devices and <a href="/wiki/Mobile_phones" class="mw-redirect" title="Mobile phones">mobile phones</a> are mass-produced using RF CMOS devices.<sup id="cite_ref-O'Neill_56-1" class="reference"><a href="#cite_note-O'Neill-56"><span class="cite-bracket">[</span>56<span class="cite-bracket">]</span></a></sup> RF CMOS circuits are widely used to transmit and receive wireless signals, in a variety of applications, such as <a href="/wiki/Satellite" title="Satellite">satellite</a> technology (such as <a href="/wiki/GPS" class="mw-redirect" title="GPS">GPS</a>), <a href="/wiki/Bluetooth" title="Bluetooth">bluetooth</a>, <a href="/wiki/Wi-Fi" title="Wi-Fi">Wi-Fi</a>, <a href="/wiki/Near-field_communication" title="Near-field communication">near-field communication</a> (NFC), <a href="/wiki/Mobile_network" class="mw-redirect" title="Mobile network">mobile networks</a> (such as <a href="/wiki/3G" title="3G">3G</a> and <a href="/wiki/4G" title="4G">4G</a>), <a href="/wiki/Terrestrial_television" title="Terrestrial television">terrestrial</a> <a href="/wiki/Broadcast" class="mw-redirect" title="Broadcast">broadcast</a>, and <a href="/wiki/Automotive_electronics" title="Automotive electronics">automotive</a> <a href="/wiki/Radar" title="Radar">radar</a> applications, among other uses.<sup id="cite_ref-60" class="reference"><a href="#cite_note-60"><span class="cite-bracket">[</span>60<span class="cite-bracket">]</span></a></sup> </p><p>Examples of commercial RF CMOS chips include Intel's <a href="/wiki/Digital_Enhanced_Cordless_Telecommunications" class="mw-redirect" title="Digital Enhanced Cordless Telecommunications">DECT</a> cordless phone, and <a href="/wiki/802.11" class="mw-redirect" title="802.11">802.11</a> (<a href="/wiki/Wi-Fi" title="Wi-Fi">Wi-Fi</a>) chips created by <a href="/wiki/Atheros" class="mw-redirect" title="Atheros">Atheros</a> and other companies.<sup id="cite_ref-IEEE-CMOS-dualband-n_61-0" class="reference"><a href="#cite_note-IEEE-CMOS-dualband-n-61"><span class="cite-bracket">[</span>61<span class="cite-bracket">]</span></a></sup> Commercial RF CMOS products are also used for <a href="/wiki/Bluetooth" title="Bluetooth">Bluetooth</a> and <a href="/wiki/Wireless_LAN" title="Wireless LAN">Wireless LAN</a> (WLAN) networks.<sup id="cite_ref-62" class="reference"><a href="#cite_note-62"><span class="cite-bracket">[</span>62<span class="cite-bracket">]</span></a></sup> RF CMOS is also used in the radio transceivers for wireless standards such as <a href="/wiki/GSM" title="GSM">GSM</a>, Wi-Fi, and Bluetooth, transceivers for mobile networks such as 3G, and remote units in <a href="/wiki/Wireless_sensor_network" title="Wireless sensor network">wireless sensor networks</a> (WSN).<sup id="cite_ref-63" class="reference"><a href="#cite_note-63"><span class="cite-bracket">[</span>63<span class="cite-bracket">]</span></a></sup> </p><p>RF CMOS technology is crucial to modern wireless communications, including wireless networks and <a href="/wiki/Mobile_communication" class="mw-redirect" title="Mobile communication">mobile communication</a> devices. One of the companies that commercialized RF CMOS technology was <a href="/wiki/Infineon" class="mw-redirect" title="Infineon">Infineon</a>. Its bulk CMOS <a href="/wiki/RF_switches" class="mw-redirect" title="RF switches">RF switches</a> sell over 1<span class="nowrap"> </span>billion units annually, reaching a cumulative 5<span class="nowrap"> </span>billion units, as of 2018<sup class="plainlinks noexcerpt noprint asof-tag update" style="display:none;"><a class="external text" href="https://en.wikipedia.org/w/index.php?title=CMOS&action=edit">[update]</a></sup>.<sup id="cite_ref-64" class="reference"><a href="#cite_note-64"><span class="cite-bracket">[</span>64<span class="cite-bracket">]</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Temperature_range">Temperature range</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=16" title="Edit section: Temperature range"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>Conventional CMOS devices work over a range of −55 °C to +125 °C. </p><p>There were theoretical indications as early as August 2008 that silicon CMOS will work down to −233 °C (40 <a href="/wiki/Kelvin" title="Kelvin">K</a>).<sup id="cite_ref-65" class="reference"><a href="#cite_note-65"><span class="cite-bracket">[</span>65<span class="cite-bracket">]</span></a></sup> Functioning temperatures near 40 K have since been achieved using overclocked AMD <a href="/wiki/Phenom_II" title="Phenom II">Phenom II</a> processors with a combination of <a href="/wiki/Liquid_nitrogen" title="Liquid nitrogen">liquid nitrogen</a> and <a href="/wiki/Liquid_helium" title="Liquid helium">liquid helium</a> cooling.<sup id="cite_ref-66" class="reference"><a href="#cite_note-66"><span class="cite-bracket">[</span>66<span class="cite-bracket">]</span></a></sup> </p><p><a href="/wiki/Silicon_carbide" title="Silicon carbide">Silicon carbide</a> CMOS devices have been tested for a year at 500 °C.<sup id="cite_ref-67" class="reference"><a href="#cite_note-67"><span class="cite-bracket">[</span>67<span class="cite-bracket">]</span></a></sup><sup id="cite_ref-68" class="reference"><a href="#cite_note-68"><span class="cite-bracket">[</span>68<span class="cite-bracket">]</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Single-electron_MOS_transistors">Single-electron MOS transistors</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=17" title="Edit section: Single-electron MOS transistors"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>Ultra small (L = 20 nm, W = 20 nm) MOSFETs achieve the single-electron limit when operated at cryogenic temperature over a range of −269 °C (4 <a href="/wiki/Kelvin" title="Kelvin">K</a>) to about −258 °C (15 <a href="/wiki/Kelvin" title="Kelvin">K</a>). The transistor displays <a href="/wiki/Coulomb_blockade" title="Coulomb blockade">Coulomb blockade</a> due to progressive charging of electrons one by one. The number of electrons confined in the channel is driven by the gate voltage, starting from an occupation of zero electrons, and it can be set to one or many.<sup id="cite_ref-69" class="reference"><a href="#cite_note-69"><span class="cite-bracket">[</span>69<span class="cite-bracket">]</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="See_also">See also</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=18" title="Edit section: See also"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <ul><li><a href="/wiki/Beyond_CMOS" title="Beyond CMOS">Beyond CMOS</a> – Possible future digital logic technologies</li> <li><a href="/wiki/Gate_equivalent" title="Gate equivalent">Gate equivalent</a> – Measure of circuit complexity</li> <li><a href="/wiki/HCMOS" title="HCMOS">HCMOS</a> – Specifications for the 74HC00 IC family</li> <li><a href="/wiki/LVCMOS" title="LVCMOS">LVCMOS</a></li> <li><a href="/wiki/SCMOS" title="SCMOS">sCMOS</a> – Camera technology</li></ul> <div class="mw-heading mw-heading2"><h2 id="References">References</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=19" title="Edit section: References"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <style data-mw-deduplicate="TemplateStyles:r1239543626">.mw-parser-output .reflist{margin-bottom:0.5em;list-style-type:decimal}@media screen{.mw-parser-output .reflist{font-size:90%}}.mw-parser-output .reflist .references{font-size:100%;margin-bottom:0;list-style-type:inherit}.mw-parser-output .reflist-columns-2{column-width:30em}.mw-parser-output .reflist-columns-3{column-width:25em}.mw-parser-output .reflist-columns{margin-top:0.3em}.mw-parser-output .reflist-columns ol{margin-top:0}.mw-parser-output .reflist-columns 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a{background:url("//upload.wikimedia.org/wikipedia/commons/6/65/Lock-green.svg")right 0.1em center/9px no-repeat}.mw-parser-output .id-lock-limited.id-lock-limited a,.mw-parser-output .id-lock-registration.id-lock-registration a{background:url("//upload.wikimedia.org/wikipedia/commons/d/d6/Lock-gray-alt-2.svg")right 0.1em center/9px no-repeat}.mw-parser-output .id-lock-subscription.id-lock-subscription a{background:url("//upload.wikimedia.org/wikipedia/commons/a/aa/Lock-red-alt-2.svg")right 0.1em center/9px no-repeat}.mw-parser-output .cs1-ws-icon a{background:url("//upload.wikimedia.org/wikipedia/commons/4/4c/Wikisource-logo.svg")right 0.1em center/12px no-repeat}body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-free a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-limited a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-registration a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .id-lock-subscription a,body:not(.skin-timeless):not(.skin-minerva) .mw-parser-output .cs1-ws-icon a{background-size:contain;padding:0 1em 0 0}.mw-parser-output .cs1-code{color:inherit;background:inherit;border:none;padding:inherit}.mw-parser-output .cs1-hidden-error{display:none;color:var(--color-error,#d33)}.mw-parser-output .cs1-visible-error{color:var(--color-error,#d33)}.mw-parser-output .cs1-maint{display:none;color:#085;margin-left:0.3em}.mw-parser-output .cs1-kern-left{padding-left:0.2em}.mw-parser-output .cs1-kern-right{padding-right:0.2em}.mw-parser-output .citation .mw-selflink{font-weight:inherit}@media screen{.mw-parser-output .cs1-format{font-size:95%}html.skin-theme-clientpref-night .mw-parser-output .cs1-maint{color:#18911f}}@media screen and (prefers-color-scheme:dark){html.skin-theme-clientpref-os .mw-parser-output .cs1-maint{color:#18911f}}</style><cite class="citation web cs1"><a rel="nofollow" class="external text" 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Vol. VI. pp. 32–33. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FISSCC.1963.1157450">10.1109/ISSCC.1963.1157450</a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=conference&rft.btitle=Nanowatt+logic+using+field-effect+metal-oxide+semiconductor+triodes&rft.pages=32-33&rft.date=1963&rft_id=info%3Adoi%2F10.1109%2FISSCC.1963.1157450&rft.aulast=Sah&rft.aufirst=Chih-Tang&rft.au=Wanlass%2C+Frank&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-27"><span class="mw-cite-backlink"><b><a href="#cite_ref-27">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="http://www.freepatentsonline.com/3356858.pdf">"Low stand-by power complementary field effect circuitry"</a> <span class="cs1-format">(PDF)</span>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=unknown&rft.btitle=Low+stand-by+power+complementary+field+effect+circuitry&rft_id=http%3A%2F%2Fwww.freepatentsonline.com%2F3356858.pdf&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-Lojek330-28"><span class="mw-cite-backlink"><b><a href="#cite_ref-Lojek330_28-0">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFLojek2007" class="citation book cs1">Lojek, Bo (2007). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=2cu1Oh_COv8C&pg=PA330"><i>History of Semiconductor Engineering</i></a>. 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(1983). <span class="id-lock-registration" title="Free registration required"><a rel="nofollow" class="external text" href="https://archive.org/details/electronicswithd0000higg"><i>Electronics with digital and analog integrated circuits</i></a></span>. <a href="/wiki/Prentice-Hall" class="mw-redirect" title="Prentice-Hall">Prentice-Hall</a>. p. <a rel="nofollow" class="external text" href="https://archive.org/details/electronicswithd0000higg/page/101">101</a>. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/9780132507042" title="Special:BookSources/9780132507042"><bdi>9780132507042</bdi></a>. <q>The dominant difference is power: CMOS gates can consume about 100,000 times less power than their TTL equivalents!</q></cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=Electronics+with+digital+and+analog+integrated+circuits&rft.pages=101&rft.pub=Prentice-Hall&rft.date=1983&rft.isbn=9780132507042&rft.aulast=Higgins&rft.aufirst=Richard+J.&rft_id=https%3A%2F%2Farchive.org%2Fdetails%2Felectronicswithd0000higg&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-50"><span class="mw-cite-backlink"><b><a href="#cite_ref-50">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFStephensDennis2000" class="citation journal cs1">Stephens, Carlene; Dennis, Maggie (2000). <a rel="nofollow" class="external text" href="https://web.archive.org/web/20171201035923/http://ieee-uffc.org/wp-content/uploads/2016/11/step.pdf#page=11">"Engineering Time: Inventing the Electronic Wristwatch"</a> <span class="cs1-format">(PDF)</span>. <i><a href="/wiki/The_British_Journal_for_the_History_of_Science" title="The British Journal for the History of Science">The British Journal for the History of Science</a></i>. <b>33</b> (4). <a href="/wiki/Cambridge_University_Press" title="Cambridge University Press">Cambridge University Press</a>: 477–497 (485). <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1017%2FS0007087400004167">10.1017/S0007087400004167</a>. <a href="/wiki/ISSN_(identifier)" class="mw-redirect" title="ISSN (identifier)">ISSN</a> <a rel="nofollow" class="external text" href="https://search.worldcat.org/issn/0007-0874">0007-0874</a>. Archived from <a rel="nofollow" class="external text" href="http://ieee-uffc.org/wp-content/uploads/2016/11/step.pdf#page=11">the original</a> <span class="cs1-format">(PDF)</span> on 2017-12-01<span class="reference-accessdate">. Retrieved <span class="nowrap">2019-11-10</span></span>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.jtitle=The+British+Journal+for+the+History+of+Science&rft.atitle=Engineering+Time%3A+Inventing+the+Electronic+Wristwatch&rft.volume=33&rft.issue=4&rft.pages=477-497+%28485%29&rft.date=2000&rft_id=info%3Adoi%2F10.1017%2FS0007087400004167&rft.issn=0007-0874&rft.aulast=Stephens&rft.aufirst=Carlene&rft.au=Dennis%2C+Maggie&rft_id=http%3A%2F%2Fieee-uffc.org%2Fwp-content%2Fuploads%2F2016%2F11%2Fstep.pdf%23page%3D11&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-51"><span class="mw-cite-backlink"><b><a href="#cite_ref-51">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://www.ionos.com/digitalguide/server/know-how/what-is-cmos/">"What is CMOS?"</a>. <i>IONOS Digitalguide</i>. 8 December 2021<span class="reference-accessdate">. Retrieved <span class="nowrap">2022-01-21</span></span>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=unknown&rft.jtitle=IONOS+Digitalguide&rft.atitle=What+is+CMOS%3F&rft.date=2021-12-08&rft_id=https%3A%2F%2Fwww.ionos.com%2Fdigitalguide%2Fserver%2Fknow-how%2Fwhat-is-cmos%2F&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-52"><span class="mw-cite-backlink"><b><a href="#cite_ref-52">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://web.archive.org/web/20111209004748/http://www.fairchildsemi.com/an/AN/AN-77.pdf">"CMOS, the Ideal Logic Family"</a> <span class="cs1-format">(PDF)</span>. Fairchild Semiconductor. January 1983. Archived from <a rel="nofollow" class="external text" href="http://www.fairchildsemi.com/an/AN/AN-77.pdf">the original</a> <span class="cs1-format">(PDF)</span> on 2011-12-09<span class="reference-accessdate">. Retrieved <span class="nowrap">2011-11-25</span></span>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=unknown&rft.btitle=CMOS%2C+the+Ideal+Logic+Family&rft.pub=Fairchild+Semiconductor&rft.date=1983-01&rft_id=http%3A%2F%2Fwww.fairchildsemi.com%2Fan%2FAN%2FAN-77.pdf&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-53"><span class="mw-cite-backlink"><b><a href="#cite_ref-53">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFMartínezKhursheedRossi2020" class="citation book cs1">Martínez, A.L.H.; Khursheed, S.; Rossi, D. (2020). "Leveraging CMOS Aging for Efficient Microelectronics Design". <i>2020 IEEE 26th International Symposium on On-Line Testing and Robust System Design (IOLTS)</i>. pp. 1–4. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FIOLTS50870.2020.9159742">10.1109/IOLTS50870.2020.9159742</a>. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/978-1-7281-8187-5" title="Special:BookSources/978-1-7281-8187-5"><bdi>978-1-7281-8187-5</bdi></a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:225582202">225582202</a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=bookitem&rft.atitle=Leveraging+CMOS+Aging+for+Efficient+Microelectronics+Design&rft.btitle=2020+IEEE+26th+International+Symposium+on+On-Line+Testing+and+Robust+System+Design+%28IOLTS%29&rft.pages=1-4&rft.date=2020&rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A225582202%23id-name%3DS2CID&rft_id=info%3Adoi%2F10.1109%2FIOLTS50870.2020.9159742&rft.isbn=978-1-7281-8187-5&rft.aulast=Mart%C3%ADnez&rft.aufirst=A.L.H.&rft.au=Khursheed%2C+S.&rft.au=Rossi%2C+D.&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-54"><span class="mw-cite-backlink"><b><a href="#cite_ref-54">^</a></b></span> <span class="reference-text">A good overview of leakage and reduction methods are explained in the book <a rel="nofollow" class="external text" href="https://www.springer.com/engineering/circuits+%26+systems/book/978-0-387-25737-2">Leakage in Nanometer CMOS Technologies</a> <a rel="nofollow" class="external text" href="https://web.archive.org/web/20111202012235/http://www.springer.com/engineering/circuits+%26+systems/book/978-0-387-25737-2">Archived</a> 2011-12-02 at the <a href="/wiki/Wayback_Machine" title="Wayback Machine">Wayback Machine</a> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/0-387-25737-3" title="Special:BookSources/0-387-25737-3">0-387-25737-3</a>.</span> </li> <li id="cite_note-55"><span class="mw-cite-backlink"><b><a href="#cite_ref-55">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFMoiseevKolodnyWimer2008" class="citation journal cs1">Moiseev, Konstantin; Kolodny, Avinoam; Wimer, Shmuel (September 2008). "Timing-aware power-optimal ordering of signals". <i>ACM Trans. Des. Autom. Electron. Syst</i>. <b>13</b> (4). Article 65. <a href="/wiki/CiteSeerX_(identifier)" class="mw-redirect" title="CiteSeerX (identifier)">CiteSeerX</a> <span class="id-lock-free" title="Freely accessible"><a rel="nofollow" class="external text" href="https://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.222.9211">10.1.1.222.9211</a></span>. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1145%2F1391962.1391973">10.1145/1391962.1391973</a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:18895687">18895687</a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.jtitle=ACM+Trans.+Des.+Autom.+Electron.+Syst.&rft.atitle=Timing-aware+power-optimal+ordering+of+signals&rft.volume=13&rft.issue=4&rft.pages=Article+65&rft.date=2008-09&rft_id=https%3A%2F%2Fciteseerx.ist.psu.edu%2Fviewdoc%2Fsummary%3Fdoi%3D10.1.1.222.9211%23id-name%3DCiteSeerX&rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A18895687%23id-name%3DS2CID&rft_id=info%3Adoi%2F10.1145%2F1391962.1391973&rft.aulast=Moiseev&rft.aufirst=Konstantin&rft.au=Kolodny%2C+Avinoam&rft.au=Wimer%2C+Shmuel&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-O'Neill-56"><span class="mw-cite-backlink">^ <a href="#cite_ref-O'Neill_56-0"><sup><i><b>a</b></i></sup></a> <a href="#cite_ref-O'Neill_56-1"><sup><i><b>b</b></i></sup></a></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFO'Neill2008" class="citation journal cs1">O'Neill, A. (2008). "Asad Abidi Recognized for Work in RF-CMOS". <i>IEEE Solid-State Circuits Society Newsletter</i>. <b>13</b> (1): 57–58. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FN-SSC.2008.4785694">10.1109/N-SSC.2008.4785694</a>. <a href="/wiki/ISSN_(identifier)" class="mw-redirect" title="ISSN (identifier)">ISSN</a> <a rel="nofollow" class="external text" href="https://search.worldcat.org/issn/1098-4232">1098-4232</a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.jtitle=IEEE+Solid-State+Circuits+Society+Newsletter&rft.atitle=Asad+Abidi+Recognized+for+Work+in+RF-CMOS&rft.volume=13&rft.issue=1&rft.pages=57-58&rft.date=2008&rft_id=info%3Adoi%2F10.1109%2FN-SSC.2008.4785694&rft.issn=1098-4232&rft.aulast=O%27Neill&rft.aufirst=A.&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-57"><span class="mw-cite-backlink"><b><a href="#cite_ref-57">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFDaneshradEltawil2002" class="citation journal cs1">Daneshrad, Babal; Eltawil, Ahmed M. (2002). "Integrated Circuit Technologies for Wireless Communications". <i>Wireless Multimedia Network Technologies</i>. The International Series in Engineering and Computer Science. <b>524</b>. Springer US: 227–244. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1007%2F0-306-47330-5_13">10.1007/0-306-47330-5_13</a>. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/0-7923-8633-7" title="Special:BookSources/0-7923-8633-7"><bdi>0-7923-8633-7</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.jtitle=Wireless+Multimedia+Network+Technologies&rft.atitle=Integrated+Circuit+Technologies+for+Wireless+Communications&rft.volume=524&rft.pages=227-244&rft.date=2002&rft_id=info%3Adoi%2F10.1007%2F0-306-47330-5_13&rft.isbn=0-7923-8633-7&rft.aulast=Daneshrad&rft.aufirst=Babal&rft.au=Eltawil%2C+Ahmed+M.&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-58"><span class="mw-cite-backlink"><b><a href="#cite_ref-58">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFChen2018" class="citation book cs1">Chen, Wai-Kai (2018). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=rMsqBgAAQBAJ&pg=SA60-PA2"><i>The VLSI Handbook</i></a>. <a href="/wiki/CRC_Press" title="CRC Press">CRC Press</a>. pp. 60–2. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/9781420005967" title="Special:BookSources/9781420005967"><bdi>9781420005967</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=The+VLSI+Handbook&rft.pages=60-2&rft.pub=CRC+Press&rft.date=2018&rft.isbn=9781420005967&rft.aulast=Chen&rft.aufirst=Wai-Kai&rft_id=https%3A%2F%2Fbooks.google.com%2Fbooks%3Fid%3DrMsqBgAAQBAJ%26pg%3DSA60-PA2&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-59"><span class="mw-cite-backlink"><b><a href="#cite_ref-59">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFMorgadoRíoRosa2011" class="citation book cs1">Morgado, Alonso; Río, Rocío del; Rosa, José M. de la (2011). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=Alv6nWVCkDIC&pg=PA1"><i>Nanometer CMOS Sigma-Delta Modulators for Software Defined Radio</i></a>. Springer. p. 1. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/9781461400370" title="Special:BookSources/9781461400370"><bdi>9781461400370</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=Nanometer+CMOS+Sigma-Delta+Modulators+for+Software+Defined+Radio&rft.pages=1&rft.pub=Springer&rft.date=2011&rft.isbn=9781461400370&rft.aulast=Morgado&rft.aufirst=Alonso&rft.au=R%C3%ADo%2C+Roc%C3%ADo+del&rft.au=Rosa%2C+Jos%C3%A9+M.+de+la&rft_id=https%3A%2F%2Fbooks.google.com%2Fbooks%3Fid%3DAlv6nWVCkDIC%26pg%3DPA1&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-60"><span class="mw-cite-backlink"><b><a href="#cite_ref-60">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFVeendrick2017" class="citation book cs1">Veendrick, Harry J. M. (2017). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=Lv_EDgAAQBAJ&pg=PA243"><i>Nanometer CMOS ICs: From Basics to ASICs</i></a>. Springer. p. 243. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/9783319475974" title="Special:BookSources/9783319475974"><bdi>9783319475974</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=Nanometer+CMOS+ICs%3A+From+Basics+to+ASICs&rft.pages=243&rft.pub=Springer&rft.date=2017&rft.isbn=9783319475974&rft.aulast=Veendrick&rft.aufirst=Harry+J.+M.&rft_id=https%3A%2F%2Fbooks.google.com%2Fbooks%3Fid%3DLv_EDgAAQBAJ%26pg%3DPA243&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> <li id="cite_note-IEEE-CMOS-dualband-n-61"><span class="mw-cite-backlink"><b><a href="#cite_ref-IEEE-CMOS-dualband-n_61-0">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFNathawadZargariSamavatiMehta" class="citation web cs1">Nathawad, L.; Zargari, M.; Samavati, H.; Mehta, S.; Kheirkhaki, A.; Chen, P.; Gong, K.; Vakili-Amini, B.; Hwang, J.; Chen, M.; Terrovitis, M.; Kaczynski, B.; Limotyrakis, S.; Mack, M.; Gan, H.; Lee, M.; Abdollahi-Alibeik, B.; Baytekin, B.; Onodera, K.; Mendis, S.; Chang, A.; Jen, S.; Su, D.; Wooley, B. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20161023053607/http://www.ewh.ieee.org/r6/scv/ssc/May2008_WLAN.pdf">"20.2: A Dual-band CMOS MIMO Radio SoC for IEEE 802.11n Wireless LAN"</a> <span class="cs1-format">(PDF)</span>. <i>IEEE Entity Web Hosting</i>. 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"Few electron limit of n-type metal oxide semiconductor single electron transistors". <i>Nanotechnology</i>. <b>23</b> (21): 215204. <a href="/wiki/ArXiv_(identifier)" class="mw-redirect" title="ArXiv (identifier)">arXiv</a>:<span class="id-lock-free" title="Freely accessible"><a rel="nofollow" class="external text" href="https://arxiv.org/abs/1203.4811">1203.4811</a></span>. <a href="/wiki/Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/2012Nanot..23u5204P">2012Nanot..23u5204P</a>. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1088%2F0957-4484%2F23%2F21%2F215204">10.1088/0957-4484/23/21/215204</a>. <a href="/wiki/PMID_(identifier)" class="mw-redirect" title="PMID (identifier)">PMID</a> <a rel="nofollow" class="external text" href="https://pubmed.ncbi.nlm.nih.gov/22552118">22552118</a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:206063658">206063658</a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.jtitle=Nanotechnology&rft.atitle=Few+electron+limit+of+n-type+metal+oxide+semiconductor+single+electron+transistors&rft.volume=23&rft.issue=21&rft.pages=215204&rft.date=2012&rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A206063658%23id-name%3DS2CID&rft_id=info%3Abibcode%2F2012Nanot..23u5204P&rft_id=info%3Aarxiv%2F1203.4811&rft_id=info%3Apmid%2F22552118&rft_id=info%3Adoi%2F10.1088%2F0957-4484%2F23%2F21%2F215204&rft.aulast=Prati&rft.aufirst=E.&rft.au=De+Michielis%2C+M.&rft.au=Belli%2C+M.&rft.au=Cocco%2C+S.&rft.au=Fanciulli%2C+M.&rft.au=Kotekar-Patil%2C+D.&rft.au=Ruoff%2C+M.&rft.au=Kern%2C+D.+P.&rft.au=Wharam%2C+D.+A.&rft.au=Verduijn%2C+J.&rft.au=Tettamanzi%2C+G.+C.&rft.au=Rogge%2C+S.&rft.au=Roche%2C+B.&rft.au=Wacquez%2C+R.&rft.au=Jehl%2C+X.&rft.au=Vinet%2C+M.&rft.au=Sanquer%2C+M.&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></span> </li> </ol></div> <div class="mw-heading mw-heading2"><h2 id="Further_reading">Further reading</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=20" title="Edit section: Further reading"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236090951"><div role="note" class="hatnote navigation-not-searchable">See also: <a href="/wiki/4000-series_integrated_circuits#Further_reading" title="4000-series integrated circuits">List of books about 4000-series integrated circuits</a></div> <ul><li><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFBaderLeeChaudhuriHuang2020" class="citation journal cs1">Bader, S.J.; Lee, H.; Chaudhuri, R.; Huang, S.; Hickman, A.; Molnar, A.; Xing, H.G.; Jena, D.; W. Then, H.; Chowdhury, N.; Palacios, T. (October 2020). <a rel="nofollow" class="external text" href="https://djena.engineering.cornell.edu/papers/2020/ted20_sam_uwbg_review.pdf">"Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices"</a> <span class="cs1-format">(PDF)</span>. <i>IEEE Transactions on Electron Devices</i>. <b>67</b> (10): 4010–20. <a href="/wiki/Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/2020ITED...67.4010B">2020ITED...67.4010B</a>. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FTED.2020.3010471">10.1109/TED.2020.3010471</a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a> <a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:221913316">221913316</a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.jtitle=IEEE+Transactions+on+Electron+Devices&rft.atitle=Prospects+for+Wide+Bandgap+and+Ultrawide+Bandgap+CMOS+Devices&rft.volume=67&rft.issue=10&rft.pages=4010-20&rft.date=2020-10&rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A221913316%23id-name%3DS2CID&rft_id=info%3Adoi%2F10.1109%2FTED.2020.3010471&rft_id=info%3Abibcode%2F2020ITED...67.4010B&rft.aulast=Bader&rft.aufirst=S.J.&rft.au=Lee%2C+H.&rft.au=Chaudhuri%2C+R.&rft.au=Huang%2C+S.&rft.au=Hickman%2C+A.&rft.au=Molnar%2C+A.&rft.au=Xing%2C+H.G.&rft.au=Jena%2C+D.&rft.au=W.+Then%2C+H.&rft.au=Chowdhury%2C+N.&rft.au=Palacios%2C+T.&rft_id=https%3A%2F%2Fdjena.engineering.cornell.edu%2Fpapers%2F2020%2Fted20_sam_uwbg_review.pdf&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></li> <li><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFBaker2010" class="citation book cs1">Baker, R. Jacob (2010). <a rel="nofollow" class="external text" href="http://CMOSedu.com"><i>CMOS: Circuit Design, Layout, and Simulation</i></a> (3rd ed.). Wiley-IEEE. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/978-0-470-88132-3" title="Special:BookSources/978-0-470-88132-3"><bdi>978-0-470-88132-3</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=CMOS%3A+Circuit+Design%2C+Layout%2C+and+Simulation&rft.edition=3rd&rft.pub=Wiley-IEEE&rft.date=2010&rft.isbn=978-0-470-88132-3&rft.aulast=Baker&rft.aufirst=R.+Jacob&rft_id=http%3A%2F%2FCMOSedu.com&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></li> <li><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFMeadConway1980" class="citation book cs1"><a href="/wiki/Carver_Mead" title="Carver Mead">Mead, Carver A.</a>; <a href="/wiki/Lynn_Conway" title="Lynn Conway">Conway, Lynn</a> (1980). <span class="id-lock-registration" title="Free registration required"><a rel="nofollow" class="external text" href="https://archive.org/details/introductiontovl00mead"><i>Introduction to VLSI systems</i></a></span>. Addison-Wesley. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/0-201-04358-0" title="Special:BookSources/0-201-04358-0"><bdi>0-201-04358-0</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=Introduction+to+VLSI+systems&rft.pub=Addison-Wesley&rft.date=1980&rft.isbn=0-201-04358-0&rft.aulast=Mead&rft.aufirst=Carver+A.&rft.au=Conway%2C+Lynn&rft_id=https%3A%2F%2Farchive.org%2Fdetails%2Fintroductiontovl00mead&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></li> <li><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFVeendrick2025" class="citation book cs1">Veendrick, H.J.M. (2025). <a rel="nofollow" class="external text" href="https://link.springer.com/book/10.1007/978-3-031-64249-4"><i>Nanometer CMOS ICs: From Basics to ASICs</i></a>. Springer. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1007%2F978-3-031-64249-4">10.1007/978-3-031-64249-4</a>. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/978-3-031-64248-7" title="Special:BookSources/978-3-031-64248-7"><bdi>978-3-031-64248-7</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=Nanometer+CMOS+ICs%3A+From+Basics+to+ASICs&rft.pub=Springer&rft.date=2025&rft_id=info%3Adoi%2F10.1007%2F978-3-031-64249-4&rft.isbn=978-3-031-64248-7&rft.aulast=Veendrick&rft.aufirst=H.J.M.&rft_id=https%3A%2F%2Flink.springer.com%2Fbook%2F10.1007%2F978-3-031-64249-4&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></li> <li><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222"><cite id="CITEREFWesteHarris2010" class="citation book cs1">Weste, Neil H. E.; Harris, David M. (2010). <a rel="nofollow" class="external text" href="http://CMOSVLSI.com/"><i>CMOS VLSI Design: A Circuits and Systems Perspective</i></a> (4th ed.). Pearson/Addison-Wesley. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a> <a href="/wiki/Special:BookSources/978-0-321-54774-3" title="Special:BookSources/978-0-321-54774-3"><bdi>978-0-321-54774-3</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=book&rft.btitle=CMOS+VLSI+Design%3A+A+Circuits+and+Systems+Perspective&rft.edition=4th&rft.pub=Pearson%2FAddison-Wesley&rft.date=2010&rft.isbn=978-0-321-54774-3&rft.aulast=Weste&rft.aufirst=Neil+H.+E.&rft.au=Harris%2C+David+M.&rft_id=http%3A%2F%2FCMOSVLSI.com%2F&rfr_id=info%3Asid%2Fen.wikipedia.org%3ACMOS" class="Z3988"></span></li></ul> <div class="mw-heading mw-heading2"><h2 id="External_links">External links</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=CMOS&action=edit&section=21" title="Edit section: External links"><span>edit</span></a><span 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href="/wiki/Depletion-load_NMOS_logic" title="Depletion-load NMOS logic">Depletion-load NMOS logic</a> (including HMOS)</li> <li><a class="mw-selflink selflink">Complementary MOS</a> (CMOS)</li> <li><a href="/wiki/Pass_transistor_logic" title="Pass transistor logic">Pass transistor logic</a> (PTL)</li> <li><a href="/wiki/BiCMOS" title="BiCMOS">Bipolar–CMOS</a> (BiCMOS)</li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Other technologies</th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Diode_logic" title="Diode logic">Diode logic</a></li> <li><a href="/wiki/Diode%E2%80%93transistor_logic" title="Diode–transistor logic">Diode–transistor logic</a> (DTL)</li> <li><a href="/wiki/Open_collector" title="Open collector">Open collector</a> (OC)</li> <li><a href="/wiki/Direct-coupled_transistor_logic" title="Direct-coupled transistor logic">Direct-coupled transistor logic</a> (DCTL)</li> <li><a href="/wiki/Emitter-coupled_logic" title="Emitter-coupled logic">Emitter-coupled logic</a> (ECL)</li> <li><a href="/wiki/Gunning_transceiver_logic" title="Gunning transceiver logic">Gunning transceiver logic</a> (GTL)</li> <li><a href="/wiki/Integrated_injection_logic" title="Integrated injection logic">Integrated injection logic</a> (I<sup>2</sup>L)</li> <li><a href="/wiki/Resistor%E2%80%93transistor_logic" title="Resistor–transistor logic">Resistor–transistor logic</a> (RTL)</li> <li><a href="/wiki/Transistor%E2%80%93transistor_logic" title="Transistor–transistor logic">Transistor–transistor logic</a> (TTL)</li> <li><a href="/wiki/Current-mode_logic" title="Current-mode logic">Current mode logic / Source-coupled logic</a> (CML/SCL)</li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Types</th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Static_logic_(digital_logic)" class="mw-redirect" title="Static logic (digital logic)">Static</a></li> <li><a href="/wiki/Dynamic_logic_(digital_electronics)" title="Dynamic logic (digital electronics)">Dynamic</a></li> <li><a href="/wiki/Domino_logic" title="Domino logic">Domino logic</a></li> <li><a href="/wiki/Four-phase_logic" title="Four-phase logic">Four-phase logic</a></li></ul> </div></td></tr></tbody></table></div> <div class="navbox-styles"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1129693374"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236075235"></div><div role="navigation" class="navbox" aria-labelledby="Electronic_components" style="padding:3px"><table class="nowraplinks mw-collapsible mw-collapsed navbox-inner" style="border-spacing:0;background:transparent;color:inherit"><tbody><tr><th scope="col" class="navbox-title" colspan="2"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1129693374"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1239400231"><div class="navbar plainlinks hlist navbar-mini"><ul><li class="nv-view"><a href="/wiki/Template:Electronic_components" title="Template:Electronic components"><abbr title="View this template">v</abbr></a></li><li class="nv-talk"><a href="/wiki/Template_talk:Electronic_components" title="Template talk:Electronic components"><abbr title="Discuss this template">t</abbr></a></li><li class="nv-edit"><a href="/wiki/Special:EditPage/Template:Electronic_components" title="Special:EditPage/Template:Electronic components"><abbr title="Edit this template">e</abbr></a></li></ul></div><div id="Electronic_components" style="font-size:114%;margin:0 4em"><a href="/wiki/Electronic_component" title="Electronic component">Electronic components</a></div></th></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;"><a href="/wiki/Semiconductor_device" title="Semiconductor device">Semiconductor<br />devices</a></th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"></div><table class="nowraplinks navbox-subgroup" style="border-spacing:0"><tbody><tr><th scope="row" class="navbox-group" style="width:1%"><a href="/wiki/MOSFET" title="MOSFET">MOS <br />transistors</a></th><td class="navbox-list-with-group navbox-list navbox-odd" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Transistor" title="Transistor">Transistor</a></li> <li><a href="/wiki/NMOS_logic" title="NMOS logic">NMOS</a></li> <li><a href="/wiki/PMOS_logic" title="PMOS logic">PMOS</a></li> <li><a href="/wiki/BiCMOS" title="BiCMOS">BiCMOS</a></li> <li><a href="/wiki/Bio-FET" title="Bio-FET">BioFET</a></li> <li><a href="/wiki/Chemical_field-effect_transistor" title="Chemical field-effect transistor">Chemical field-effect transistor</a> (ChemFET)</li> <li><a class="mw-selflink selflink">Complementary MOS</a> (CMOS)</li> <li><a href="/wiki/Depletion-load_NMOS_logic" title="Depletion-load NMOS logic">Depletion-load NMOS</a></li> <li><a href="/wiki/FinFET" class="mw-redirect" title="FinFET">Fin field-effect transistor</a> (FinFET)</li> <li><a href="/wiki/Floating-gate_MOSFET" title="Floating-gate MOSFET">Floating-gate MOSFET</a> (FGMOS)</li> <li><a href="/wiki/Insulated-gate_bipolar_transistor" title="Insulated-gate bipolar transistor">Insulated-gate bipolar transistor</a> (IGBT)</li> <li><a href="/wiki/ISFET" title="ISFET">ISFET</a></li> <li><a href="/wiki/LDMOS" title="LDMOS">LDMOS</a></li> <li><a href="/wiki/MOSFET" title="MOSFET">MOS field-effect transistor</a> (MOSFET)</li> <li><a href="/wiki/Multigate_device" title="Multigate device">Multi-gate field-effect transistor</a> (MuGFET)</li> <li><a href="/wiki/Power_MOSFET" title="Power MOSFET">Power MOSFET</a></li> <li><a href="/wiki/Thin-film_transistor" title="Thin-film transistor">Thin-film transistor</a> (TFT)</li> <li><a href="/wiki/VMOS" title="VMOS">VMOS</a></li> <li><a href="/wiki/Power_MOSFET#UMOS" title="Power MOSFET">UMOS</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%"><a href="/wiki/Transistor" title="Transistor">Other <br />transistors</a></th><td class="navbox-list-with-group navbox-list navbox-even" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Bipolar_junction_transistor" title="Bipolar junction transistor">Bipolar junction transistor</a> (BJT)</li> <li><a href="/wiki/Darlington_transistor" title="Darlington transistor">Darlington transistor</a></li> <li><a href="/wiki/Diffused_junction_transistor" title="Diffused junction transistor">Diffused junction transistor</a></li> <li><a href="/wiki/Field-effect_transistor" title="Field-effect transistor">Field-effect transistor</a> (FET) <ul><li><a href="/wiki/JFET" title="JFET">Junction Gate FET (JFET)</a></li> <li><a href="/wiki/Organic_field-effect_transistor" title="Organic field-effect transistor">Organic FET (OFET)</a></li></ul></li> <li><a href="/wiki/Light-emitting_transistor" title="Light-emitting transistor">Light-emitting transistor</a> (LET) <ul><li><a href="/wiki/Organic_light-emitting_transistor" title="Organic light-emitting transistor">Organic LET (OLET)</a></li></ul></li> <li><a href="/wiki/Pentode_transistor" title="Pentode transistor">Pentode transistor</a></li> <li><a href="/wiki/Point-contact_transistor" title="Point-contact transistor">Point-contact transistor</a></li> <li><a href="/wiki/Programmable_unijunction_transistor" title="Programmable unijunction transistor">Programmable unijunction transistor</a> (PUT)</li> <li><a href="/wiki/Static_induction_transistor" title="Static induction transistor">Static induction transistor</a> (SIT)</li> <li><a href="/wiki/Tetrode_transistor" title="Tetrode transistor">Tetrode transistor</a></li> <li><a href="/wiki/Unijunction_transistor" title="Unijunction transistor">Unijunction transistor</a> (UJT)</li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%"><a href="/wiki/Diode" title="Diode">Diodes</a></th><td class="navbox-list-with-group navbox-list navbox-odd" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Avalanche_diode" title="Avalanche diode">Avalanche diode</a></li> <li><a href="/wiki/Constant-current_diode" title="Constant-current diode">Constant-current diode</a> (CLD, CRD)</li> <li><a href="/wiki/Gunn_diode" title="Gunn diode">Gunn diode</a></li> <li><a href="/wiki/Laser_diode" title="Laser diode">Laser diode</a> (LD)</li> <li><a href="/wiki/Light-emitting_diode" title="Light-emitting diode">Light-emitting diode</a> (LED)</li> <li><a href="/wiki/OLED" title="OLED">Organic light-emitting diode</a> (OLED)</li> <li><a href="/wiki/Photodiode" title="Photodiode">Photodiode</a></li> <li><a href="/wiki/PIN_diode" title="PIN diode">PIN diode</a></li> <li><a href="/wiki/Schottky_diode" title="Schottky diode">Schottky diode</a></li> <li><a href="/wiki/Step_recovery_diode" title="Step recovery diode">Step recovery diode</a></li> <li><a href="/wiki/Zener_diode" title="Zener diode">Zener diode</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Other <br />devices</th><td class="navbox-list-with-group navbox-list navbox-even" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Printed_electronics" title="Printed electronics">Printed electronics</a></li> <li><a href="/wiki/Printed_circuit_board" title="Printed circuit board">Printed circuit board</a></li> <li><a href="/wiki/DIAC" title="DIAC">DIAC</a></li> <li><a href="/wiki/Heterostructure_barrier_varactor" title="Heterostructure barrier varactor">Heterostructure barrier varactor</a></li> <li><a href="/wiki/Integrated_circuit" title="Integrated circuit">Integrated circuit</a> (IC)</li> <li><a href="/wiki/Hybrid_integrated_circuit" title="Hybrid integrated circuit">Hybrid integrated circuit</a></li> <li><a href="/wiki/Light_emitting_capacitor" class="mw-redirect" title="Light emitting capacitor">Light emitting capacitor</a> (LEC)</li> <li><a href="/wiki/Memistor" title="Memistor">Memistor</a></li> <li><a href="/wiki/Memristor" title="Memristor">Memristor</a></li> <li><a href="/wiki/Memtransistor" title="Memtransistor">Memtransistor</a></li> <li><a href="/wiki/Memory_cell_(computing)" title="Memory cell (computing)">Memory cell</a></li> <li><a href="/wiki/Metal-oxide_varistor" class="mw-redirect" title="Metal-oxide varistor">Metal-oxide varistor</a> (MOV)</li> <li><a href="/wiki/Mixed-signal_integrated_circuit" title="Mixed-signal integrated circuit">Mixed-signal integrated circuit</a></li> <li><a href="/wiki/MOS_integrated_circuit" class="mw-redirect" title="MOS integrated circuit">MOS integrated circuit</a> (MOS IC)</li> <li><a href="/wiki/Organic_semiconductor" title="Organic semiconductor">Organic semiconductor</a></li> <li><a href="/wiki/Photodetector" title="Photodetector">Photodetector</a></li> <li><a href="/wiki/Quantum_circuit" title="Quantum circuit">Quantum circuit</a></li> <li><a href="/wiki/RF_CMOS" title="RF CMOS">RF CMOS</a></li> <li><a href="/wiki/Silicon_controlled_rectifier" title="Silicon controlled rectifier">Silicon controlled rectifier</a> (SCR)</li> <li><a href="/wiki/Solaristor" title="Solaristor">Solaristor</a></li> <li><a href="/wiki/Static_induction_thyristor" title="Static induction thyristor">Static induction thyristor</a> (SITh)</li> <li><a href="/wiki/Three-dimensional_integrated_circuit" title="Three-dimensional integrated circuit">Three-dimensional integrated circuit</a> (3D IC)</li> <li><a href="/wiki/Thyristor" title="Thyristor">Thyristor</a></li> <li><a href="/wiki/Trancitor" title="Trancitor">Trancitor</a></li> <li><a href="/wiki/TRIAC" title="TRIAC">TRIAC</a></li> <li><a href="/wiki/Varicap" title="Varicap">Varicap</a></li></ul> </div></td></tr></tbody></table><div></div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;"><a href="/wiki/Voltage_regulator" title="Voltage regulator">Voltage regulators</a></th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Linear_regulator" title="Linear regulator">Linear regulator</a></li> <li><a href="/wiki/Low-dropout_regulator" title="Low-dropout regulator">Low-dropout regulator</a></li> <li><a href="/wiki/Switching_regulator" class="mw-redirect" title="Switching regulator">Switching regulator</a></li> <li><a href="/wiki/Buck_converter" title="Buck converter">Buck</a></li> <li><a href="/wiki/Boost_converter" title="Boost converter">Boost</a></li> <li><a href="/wiki/Buck%E2%80%93boost_converter" title="Buck–boost converter">Buck–boost</a></li> <li><a href="/wiki/Split-pi_topology" title="Split-pi topology">Split-pi</a></li> <li><a href="/wiki/%C4%86uk_converter" title="Ćuk converter">Ćuk</a></li> <li><a href="/wiki/Single-ended_primary-inductor_converter" title="Single-ended primary-inductor converter">SEPIC</a></li> <li><a href="/wiki/Charge_pump" title="Charge pump">Charge pump</a></li> <li><a href="/wiki/Switched_capacitor" title="Switched capacitor">Switched capacitor</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;"><a href="/wiki/Vacuum_tube" title="Vacuum tube">Vacuum tubes</a></th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Acorn_tube" title="Acorn tube">Acorn tube</a></li> <li><a href="/wiki/Audion" title="Audion">Audion</a></li> <li><a href="/wiki/Beam_tetrode" title="Beam tetrode">Beam tetrode</a></li> <li><a href="/wiki/Hot-wire_barretter" title="Hot-wire barretter">Barretter</a></li> <li><a href="/wiki/Compactron" title="Compactron">Compactron</a></li> <li><a href="/wiki/Vacuum_diode" class="mw-redirect" title="Vacuum diode">Diode</a></li> <li><a href="/wiki/Fleming_valve" title="Fleming valve">Fleming valve</a></li> <li><a href="/wiki/Neutron_generator" title="Neutron generator">Neutron tube</a></li> <li><a href="/wiki/Nonode" title="Nonode">Nonode</a></li> <li><a href="/wiki/Nuvistor" title="Nuvistor">Nuvistor</a></li> <li><a href="/wiki/Pentagrid_converter" title="Pentagrid converter">Pentagrid</a> (Hexode, Heptode, Octode)</li> <li><a href="/wiki/Pentode" title="Pentode">Pentode</a></li> <li><a href="/wiki/Photomultiplier_tube" title="Photomultiplier tube">Photomultiplier</a></li> <li><a href="/wiki/Phototube" title="Phototube">Phototube</a></li> <li><a href="/wiki/Tetrode" title="Tetrode">Tetrode</a></li> <li><a href="/wiki/Triode" title="Triode">Triode</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;"><a href="/wiki/Vacuum_tube" title="Vacuum tube">Vacuum tubes</a> (<a href="/wiki/Electromagnetic_radiation" title="Electromagnetic radiation">RF</a>)</th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Backward-wave_oscillator" title="Backward-wave oscillator">Backward-wave oscillator</a> (BWO)</li> <li><a href="/wiki/Cavity_magnetron" title="Cavity magnetron">Cavity magnetron</a></li> <li><a href="/wiki/Crossed-field_amplifier" title="Crossed-field amplifier">Crossed-field amplifier</a> (CFA)</li> <li><a href="/wiki/Gyrotron" title="Gyrotron">Gyrotron</a></li> <li><a href="/wiki/Inductive_output_tube" title="Inductive output tube">Inductive output tube</a> (IOT)</li> <li><a href="/wiki/Klystron" title="Klystron">Klystron</a></li> <li><a href="/wiki/Maser" title="Maser">Maser</a></li> <li><a href="/wiki/Sutton_tube" title="Sutton tube">Sutton tube</a></li> <li><a href="/wiki/Traveling-wave_tube" title="Traveling-wave tube">Traveling-wave tube</a> (TWT)</li> <li><a href="/wiki/X-ray_tube" title="X-ray tube">X-ray tube</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;"><a href="/wiki/Cathode-ray_tube" title="Cathode-ray tube">Cathode-ray tubes</a></th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Beam_deflection_tube" title="Beam deflection tube">Beam deflection tube</a></li> <li><a href="/wiki/Charactron" title="Charactron">Charactron</a></li> <li><a href="/wiki/Iconoscope" title="Iconoscope">Iconoscope</a></li> <li><a href="/wiki/Magic_eye_tube" title="Magic eye tube">Magic eye tube</a></li> <li><a href="/wiki/Monoscope" title="Monoscope">Monoscope</a></li> <li><a href="/wiki/Selectron_tube" title="Selectron tube">Selectron tube</a></li> <li><a href="/wiki/Storage_tube" title="Storage tube">Storage tube</a></li> <li><a href="/wiki/Trochotron" class="mw-redirect" title="Trochotron">Trochotron</a></li> <li><a href="/wiki/Video_camera_tube" title="Video camera tube">Video camera tube</a></li> <li><a href="/wiki/Williams_tube" title="Williams tube">Williams tube</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;"><a href="/wiki/Gas-filled_tube" title="Gas-filled tube">Gas-filled tubes</a></th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Cold_cathode" title="Cold cathode">Cold cathode</a></li> <li><a href="/wiki/Crossatron" title="Crossatron">Crossatron</a></li> <li><a href="/wiki/Dekatron" title="Dekatron">Dekatron</a></li> <li><a href="/wiki/Ignitron" title="Ignitron">Ignitron</a></li> <li><a href="/wiki/Krytron" title="Krytron">Krytron</a></li> <li><a href="/wiki/Mercury-arc_valve" title="Mercury-arc valve">Mercury-arc valve</a></li> <li><a href="/wiki/Neon_lamp" title="Neon lamp">Neon lamp</a></li> <li><a href="/wiki/Nixie_tube" title="Nixie tube">Nixie tube</a></li> <li><a href="/wiki/Thyratron" title="Thyratron">Thyratron</a></li> <li><a href="/wiki/Trigatron" title="Trigatron">Trigatron</a></li> <li><a href="/wiki/Voltage-regulator_tube" title="Voltage-regulator tube">Voltage-regulator tube</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;">Adjustable</th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Potentiometer" title="Potentiometer">Potentiometer</a> <ul><li><a href="/wiki/Digital_potentiometer" title="Digital potentiometer">digital</a></li></ul></li> <li><a href="/wiki/Variable_capacitor" title="Variable capacitor">Variable capacitor</a></li> <li><a href="/wiki/Varicap" title="Varicap">Varicap</a></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;">Passive</th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li>Connector <ul><li><a href="/wiki/Audio_and_video_interfaces_and_connectors" title="Audio and video interfaces and connectors">audio and video</a></li> <li><a href="/wiki/AC_power_plugs_and_sockets" title="AC power plugs and sockets">electrical power</a></li> <li><a href="/wiki/RF_connector" title="RF connector">RF</a></li></ul></li> <li><a href="/wiki/Electrolytic_detector" title="Electrolytic detector">Electrolytic detector</a></li> <li><a href="/wiki/Ferrite_core" title="Ferrite core">Ferrite</a></li> <li><a href="/wiki/Antifuse" title="Antifuse">Antifuse</a></li> <li><a href="/wiki/Fuse_(electrical)" title="Fuse (electrical)">Fuse</a> <ul><li><a href="/wiki/Resettable_fuse" title="Resettable fuse">resettable</a></li> <li><a href="/wiki/EFUSE" class="mw-redirect" title="EFUSE">eFUSE</a></li></ul></li> <li><a href="/wiki/Resistor" title="Resistor">Resistor</a></li> <li><a href="/wiki/Switch" title="Switch">Switch</a></li> <li><a href="/wiki/Thermistor" title="Thermistor">Thermistor</a></li> <li><a href="/wiki/Transformer" title="Transformer">Transformer</a></li> <li><a href="/wiki/Varistor" title="Varistor">Varistor</a></li> <li><a href="/wiki/Wire" title="Wire">Wire</a> <ul><li><a href="/wiki/Wollaston_wire" title="Wollaston wire">Wollaston wire</a></li></ul></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%;text-align:center;"><a href="/wiki/Electrical_reactance" title="Electrical reactance">Reactive</a></th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><a href="/wiki/Capacitor" title="Capacitor">Capacitor</a> <ul><li><a href="/wiki/Capacitor_types" title="Capacitor types">types</a></li></ul></li> <li><a href="/wiki/Ceramic_resonator" title="Ceramic resonator">Ceramic resonator</a></li> <li><a href="/wiki/Crystal_oscillator" title="Crystal oscillator">Crystal oscillator</a></li> <li><a href="/wiki/Inductor" title="Inductor">Inductor</a></li> <li><a href="/wiki/Parametron" title="Parametron">Parametron</a></li> <li><a href="/wiki/Relay" title="Relay">Relay</a> <ul><li><a href="/wiki/Reed_relay" title="Reed relay">reed relay</a></li> <li><a href="/wiki/Mercury_relay" title="Mercury relay">mercury relay</a></li></ul></li></ul> </div></td></tr></tbody></table></div>    </div><noscript><img src="https://login.wikimedia.org/wiki/Special:CentralAutoLogin/start?type=1x1" alt="" width="1" height="1" style="border: none; position: absolute;"></noscript> <div class="printfooter" data-nosnippet="">Retrieved from "<a dir="ltr" href="https://en.wikipedia.org/w/index.php?title=CMOS&oldid=1259433350">https://en.wikipedia.org/w/index.php?title=CMOS&oldid=1259433350</a>"</div></div> <div id="catlinks" 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