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style="padding-right:1em">日期：2024-08-08</span> <span id="hits">阅读：737</span> </div> <div class="introduce">核心提示：中国科学院上海微系统与信息技术研究所研究员狄增峰团队开发出面向二维集成电路的单晶氧化铝栅介质材料——人造蓝宝石</div><div id="content"><div class="content" id="article"><p> <span style="text-indent: 2em;">8月8日，作为组成芯片的基本元件，晶体管的尺寸随着芯片缩小不断接近物理极限，其中发挥着绝缘作用的栅介质材料十分关键。中国科学院上海微系统与信息技术研究所研究员狄增峰团队开发出面向二维集成电路的单晶氧化铝栅介质材料——人造蓝宝石，这种材料具有卓越的绝缘性能，即使在厚度仅为1纳米时，也能有效阻止电流泄漏。相关成果8月7日发表于国际学术期刊《自然》。</span></p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202408/08/093845912.jpg" width="640" height="856" alt="" /></p> <p style="text-align: center;">中国科学院上海微系统与信息技术研究所成果登上《自然》。（海报由受访团队提供）</p> <p>“二维集成电路是一种新型芯片，用厚度仅为1个或几个原子层的二维半导体材料构建，有望突破传统芯片的物理极限。但由于缺少与之匹配的高质量栅介质材料，其实际性能与理论相比尚存较大差异。”中国科学院上海微系统与信息技术研究所研究员狄增峰说。</p> <p>狄增峰表示，传统的栅介质材料在厚度减小到纳米级别时，绝缘性能会下降，进而导致电流泄漏，增加芯片的能耗和发热量。为应对该难题，团队创新开发出原位插层氧化技术。</p> <p>“原位插层氧化技术的核心在于精准控制氧原子一层一层有序嵌入金属元素的晶格中。”中国科学院上海微系统与信息技术研究所研究员田子傲说，“传统氧化铝材料通常呈无序结构，这会导致其在极薄层面上的绝缘性能大幅下降。”</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202408/08/093834252.jpg" width="277" height="324" alt="" /></p> <p style="text-align: center;">氧化铝薄膜晶圆。（受访团队供图）</p> <p>具体来看，团队首先以锗基石墨烯晶圆作为预沉积衬底生长单晶金属铝，利用石墨烯与单晶金属铝之间较弱的范德华作用力，实现4英寸单晶金属铝晶圆无损剥离，剥离后单晶金属铝表面呈现无缺陷的原子级平整。随后，在极低的氧气氛围下，氧原子逐层嵌入单晶金属铝表面的晶格中，最终得到稳定、化学计量比准确、原子级厚度均匀的氧化铝薄膜晶圆。</p> <p>狄增峰介绍，团队成功以单晶氧化铝为栅介质材料制备出低功耗的晶体管阵列，晶体管阵列具有良好的性能一致性。晶体管的击穿场强、栅漏电流、界面态密度等指标均满足国际器件与系统路线图对未来低功耗芯片的要求，有望启发业界发展新一代栅介质材料。</p> <div style="text-indent: 28px;"> </div></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=16198');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=16198"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> 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