Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs

<!DOCTYPE html> <html lang="en" dir="ltr"> <head>  <script async src="https://www.googletagmanager.com/gtag/js?id=G-P63WKM1TM1"></script> <script> window.dataLayer = window.dataLayer || []; function gtag(){dataLayer.push(arguments);} gtag('js', new Date()); gtag('config', 'G-P63WKM1TM1'); </script>  <script type="text/javascript" > (function(m,e,t,r,i,k,a){m[i]=m[i]||function(){(m[i].a=m[i].a||[]).push(arguments)}; m[i].l=1*new Date(); for (var j = 0; j < document.scripts.length; j++) {if (document.scripts[j].src === r) { return; }} k=e.createElement(t),a=e.getElementsByTagName(t)[0],k.async=1,k.src=r,a.parentNode.insertBefore(k,a)}) (window, document, "script", "https://mc.yandex.ru/metrika/tag.js", "ym"); ym(55165297, "init", { clickmap:false, trackLinks:true, accurateTrackBounce:true, webvisor:false }); </script> <noscript><div><img src="https://mc.yandex.ru/watch/55165297" style="position:absolute; left:-9999px;" alt="" /></div></noscript>    <title>Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs</title> <meta name="description" content="Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs"> <meta name="keywords" content="AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs."> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <meta name="citation_title" content="Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs"> <meta name="citation_author" content="K. Karami"> <meta name="citation_author" content="S. Hassan"> <meta name="citation_author" content="S. Taking"> <meta name="citation_author" content="A. Ofiare"> <meta name="citation_author" content="A. Dhongde"> <meta name="citation_author" content="A. Al-Khalidi"> <meta name="citation_author" content="E. Wasige"> <meta name="citation_publication_date" content="2023/02/07"> <meta name="citation_journal_title" content="International Journal of Electronics and Communication Engineering"> <meta name="citation_volume" content="17"> <meta name="citation_issue" content="2"> <meta name="citation_firstpage" content="47"> <meta name="citation_lastpage" content="50"> <meta name="citation_pdf_url" content="https://publications.waset.org/10012945/pdf"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none navbar-toggler ml-auto" type="button" data-toggle="collapse" data-target="#navbarMenu" aria-controls="navbarMenu" aria-expanded="false" aria-label="Toggle navigation"> <span class="navbar-toggler-icon"></span> </button> <div class="w-100"> <div class="d-none d-lg-flex flex-row-reverse"> <form method="get" action="https://waset.org/search" class="form-inline my-2 my-lg-0"> <input class="form-control mr-sm-2" type="search" placeholder="Search Conferences" value="" name="q" aria-label="Search"> <button class="btn btn-light my-2 my-sm-0" type="submit"><i class="fas fa-search"></i></button> </form> </div> <div class="collapse navbar-collapse mt-1" id="navbarMenu"> <ul class="navbar-nav ml-auto align-items-center" id="mainNavMenu"> <li class="nav-item"> <a class="nav-link" href="https://waset.org/conferences" title="Conferences in 2024/2025/2026">Conferences</a> </li> <li class="nav-item"> <a class="nav-link" href="https://waset.org/disciplines" title="Disciplines">Disciplines</a> </li> <li class="nav-item"> <a class="nav-link" href="https://waset.org/committees" rel="nofollow">Committees</a> </li> <li class="nav-item dropdown"> <a class="nav-link dropdown-toggle" href="#" id="navbarDropdownPublications" role="button" data-toggle="dropdown" aria-haspopup="true" aria-expanded="false"> Publications </a> <div class="dropdown-menu" aria-labelledby="navbarDropdownPublications"> <a class="dropdown-item" href="https://publications.waset.org/abstracts">Abstracts</a> <a class="dropdown-item" href="https://publications.waset.org">Periodicals</a> <a class="dropdown-item" href="https://publications.waset.org/archive">Archive</a> </div> </li> <li class="nav-item"> <a class="nav-link" href="https://waset.org/page/support" title="Support">Support</a> </li> </ul> </div> </div> </nav> </div> </header> <main> <div class="container mt-4"> <div class="row"> <div class="col-md-9 mx-auto"> <form method="get" action="https://publications.waset.org/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value=""> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 33093</div> </div> </div> </div> <div class="card publication-listing mt-3 mb-3"> <h5 class="card-header" style="font-size:.9rem">Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=K.%20Karami">K. Karami</a>, <a href="https://publications.waset.org/search?q=S.%20Hassan"> S. Hassan</a>, <a href="https://publications.waset.org/search?q=S.%20Taking"> S. Taking</a>, <a href="https://publications.waset.org/search?q=A.%20Ofiare"> A. Ofiare</a>, <a href="https://publications.waset.org/search?q=A.%20Dhongde"> A. Dhongde</a>, <a href="https://publications.waset.org/search?q=A.%20Al-Khalidi"> A. Al-Khalidi</a>, <a href="https://publications.waset.org/search?q=E.%20Wasige"> E. Wasige</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>We have made a comparative study on the influence of Al2O3 and HfO2 grown using Atomic Layer Deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of A2lO3 and HfO2 respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al2O3 gate dielectric layers, respectively. The negative shift for the 20 nm HfO2 and 20 nm Al2O3 were 1.2 V and 4.9 V, respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO2 than Al2O3. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 104 was obtained compared to the sample without the dielectric material.</p> <iframe src="https://publications.waset.org/10012945.pdf" style="width:100%; height:400px;" frameborder="0"></iframe> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=AlGaN%2FGaN%20HEMTs" title="AlGaN/GaN HEMTs">AlGaN/GaN HEMTs</a>, <a href="https://publications.waset.org/search?q=Al2O3" title=" Al2O3"> Al2O3</a>, <a href="https://publications.waset.org/search?q=HfO2" title=" HfO2"> HfO2</a>, <a href="https://publications.waset.org/search?q=MOSHEMTs." title=" MOSHEMTs."> MOSHEMTs.</a> </p> <a href="https://publications.waset.org/10012945/comparative-study-of-al2o3-and-hfo2-as-gate-dielectric-on-algangan-moshemts" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10012945/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10012945/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10012945/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10012945/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10012945/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10012945/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10012945/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10012945/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10012945/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10012945/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10012945.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">408</span> </span> <p class="card-text"><strong>References:</strong></p> <br>[1] Gao F, Chen D, Lu B, Tuller HL, Thompson CV, Keller S, Mishra UK, Palacios T., “Impact of moisture and fluorocarbon passivation on the current collapse of AlGaN/GaN HEMTs,” IEEE Electron Device Lett., vol. 33, no. 10, pp. 1378–1380, 2012. <br>[2] Simin G, Koudymov A, Tarakji A, Hu X, Yang J, Khan MA, Shur MS, Gaska R., “Scholar Commons Induced Strain Mechanism of Current Collapse in AlGaN / GaN Heterostructure Field-Effect Transistors,” vol. 79, no. October, pp. 2651–2653, 2001. <br>[3] Mizutani T, Ohno Y, Akita M, Kishimoto S, Maezawa K., “A study on current collapse in AlGaN/GaN HEMTs induced by bias stress,” IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2015–2020, 2003. <br>[4] Arulkumaran S, Egawa T, Ishikawa H, Jimbo T, Sano Y., “Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride,” Appl. Phys. Lett., vol. 84, no. 4, pp. 613–615, 2004. <br>[5] Ho SY, Wang CH, Huang J., “MoP-ISCS-022 Current Collapse Suppression by SiO2 Passivation in p-GaN / AlGaN / GaN MoP-ISCS-022,” vol. 34, pp. 9–10, 2016. <br>[6] Kakegami T, Ohi S, Sengendo KP, Tokuda H, Kuzuhara M., “Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNx,” IMFEDK 2014 - 2014 Int. Meet. Futur. Electron Devices, Kansai, vol. 29, no. 5, pp. 2–3, 2014. <br>[7] Zhang Z, Yu G, Zhang X, Deng X, Li S, Fan Y, Sun S, Song L, Tan S, Wu D, Li W., “Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer,” IEEE Trans. Electron Devices, vol. 63, no. 2, pp. 731–738, 2016. <br>[8] Zhu R, Zhou Q, Zhang A, Shi Y, Wang Z, Liu L, Chen B, Jin Y, Chen W, Zhang B., “High performance normally-off Al2O3/GaN MOSFETs with record high threshold voltage by interface charge engineering,” 2016 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol. ICSICT 2016 - Proc., pp. 1038–1040, 2017. <br>[9] Liu HY, Hsu WC, Chou BY, Lee CS, Sun WC, Wei SY, Yu SM., “Temperature-dependent electrical performance of AlGaN/GaN MOS HEMT with ultrasonic spray pyrolysis deposited Al2O3,” Proc. Int. Conf. Power Electron. Drive Syst., vol. 2015-August, no. June, pp. 575–577, 2015. <br>[10] Lee CS, Yao XC, Huang YP, Hsu WC., “Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides,” IEEE J. Electron Devices Soc., vol. 6, no. October, pp. 1142–1146, 2018. <br>[11] Liu S, Yang S, Tang Z, Jiang Q, Liu C, Wang M, Chen KJ., “Al2O3/AlN/GaN MOS-channel-HEMTs with an AlN interfacial layer,” IEEE Electron Device Lett., vol. 35, no. 7, pp. 723–725, 2014. <br>[12] Li S, Hu Q, Wang X, Li T, Li X, Wu Y., “Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOx as Gate Dielectric,” IEEE Electron Device Lett., vol. 40, no. 2, pp. 295–298, 2019. <br>[13] Yue YZ, Hao Y, Zhang JC., “AlGaN/GaN MOS-HEMT with stack gate HfO2/Al2O 3 structure grown by atomic layer deposition,” 2008 IEEE CSIC Symp. GaAs ICs Celebr. 30 Years Monterey, Tech. Dig. 2008, pp. 8–11, 2008, doi: 10.1109/CSICS.2008. <br>[14] Yue Y, Hao Y, Zhang J, Ni J, Mao W, Feng Q, Liu L., “AlGaN / GaN MOS-HEMT With HfO2 Dielectric and Atomic Layer Deposition,” IEEE Electron Device Lett., vol. 29, no. 8, pp. 838–840, 2008. <br>[15] Y. -Z. Yue, Y. Hao and J. -C. Zhang, "AlGaN/GaN MOS-HEMT with Stack Gate HfO2/Al2O3 Structure Grown by Atomic Layer Deposition," 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, Monterey, CA, USA, pp. 1-4, 2008. <br>[16] Seok, Ogyun, Woojin Ahn, Min-Koo Han, and Min-Woo Ha. "High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators." Semiconductor science and technology 28, no. 2 2012. <br>[17] Wang, Huan-Chung, Ting-En Hsieh, Yueh-Chin Lin, Quang Ho Luc, Shih-Chien Liu, Chia-Hsun Wu, Chang Fu Dee, Burhanuddin Yeop Majlis, and Edward Yi Chang. "AlGaN/GaN MIS-HEMTs with high quality ALD-Al2O3 gate dielectric using water and remote oxygen plasma as oxidants." IEEE Journal of the Electron Devices Society 6, 110-115, 2017. <br>[18] Ťapajna, M., Válik, L., Gucmann, F., Gregušová, D., Fröhlich, K., Haščík, Š., Dobročka, E., Tóth, L., Pécz, B. and Kuzmík, J., “Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: impact of deposition conditions on interface state density.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 35(1), p.01A107, 2017. <br>[19] Jogai B., “Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors,” J. Appl. Phys., vol. 93, no. 3, pp. 1631–1635, 2003. <br>[20] Wang W, Derluyn J, Germain M, Leys M, Degroote S, Schreurs D, Borghs G., “Effect of surface passivation on two-dimensional electron gas carrier density in AlGaN/GaN structures,” Japanese J. Appl. Physics, Part 2 Lett., vol. 45, no. 8–11, 2006. <br>[21] Green BM, Chu KK, Chumbes EM, Smart JA, Shealy JR, Eastman LF., “Effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT’s,” IEEE Electron Device Lett., vol. 21, no. 6, pp. 268–270, 2000. <br>[22] Jeon CM, Lee JL., “Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN/GaN heterostructure field-effect transistors,” Appl. Phys. Lett., vol. 86, no. 17, pp. 1–3, 2005. <br>[23] Ando T, Shimura T, Watanabe H, Hirano T, Yoshida S, Tai K, Yamaguchi S, Iwamoto H, Kadomura S, Toyoda S, Kumigashira H., “Mechanism of carrier mobility degradation induced by crystallization of HfO2 gate dielectrics,” Appl. Phys. Express, vol. 2, no. 7, pp. 16–19, 2009. <br>[24] Ryu JH, You YG, Kim SW, Hong JH, Na JH, Jhang SH., “Effect of Al2O3 deposition on carrier mobility and ambient stability of few-layer MoS2 field effect transistors,” Curr. Appl. Phys., vol. 20, no. 2, pp. 363–365, 2020. <br>[25] Silveira D. Flandre et PGA Jespers., “A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA,” IEEE J. Solid-State Circuits, vol. 31, no. 9, pp. 1314–1319, 1996. </div> </div> </div> </main> <footer> <div id="infolinks" class="pt-3 pb-2"> <div class="container"> <div style="background-color:#f5f5f5;" class="p-3"> <div class="row"> <div class="col-md-2"> <ul class="list-unstyled"> About <li><a href="https://waset.org/page/support">About Us</a></li> <li><a href="https://waset.org/page/support#legal-information">Legal</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/WASET-16th-foundational-anniversary.pdf">WASET celebrates its 16th foundational anniversary</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Account <li><a href="https://waset.org/profile">My Account</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Explore <li><a href="https://waset.org/disciplines">Disciplines</a></li> <li><a href="https://waset.org/conferences">Conferences</a></li> <li><a href="https://waset.org/conference-programs">Conference Program</a></li> <li><a href="https://waset.org/committees">Committees</a></li> <li><a href="https://publications.waset.org">Publications</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Research <li><a href="https://publications.waset.org/abstracts">Abstracts</a></li> <li><a href="https://publications.waset.org">Periodicals</a></li> <li><a href="https://publications.waset.org/archive">Archive</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Open Science <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Open-Science-Philosophy.pdf">Open Science Philosophy</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Open-Science-Award.pdf">Open Science Award</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Open-Society-Open-Science-and-Open-Innovation.pdf">Open Innovation</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Postdoctoral-Fellowship-Award.pdf">Postdoctoral Fellowship Award</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Scholarly-Research-Review.pdf">Scholarly Research Review</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Support <li><a href="https://waset.org/page/support">Support</a></li> <li><a href="https://waset.org/profile/messages/create">Contact Us</a></li> <li><a href="https://waset.org/profile/messages/create">Report Abuse</a></li> </ul> </div> </div> </div> </div> </div> <div class="container text-center"> <hr style="margin-top:0;margin-bottom:.3rem;"> <a href="https://creativecommons.org/licenses/by/4.0/" target="_blank" class="text-muted small">Creative Commons Attribution 4.0 International License</a> <div id="copy" class="mt-2">© 2024 World Academy of Science, Engineering and Technology</div> </div> </footer> <a href="javascript:" id="return-to-top"><i class="fas fa-arrow-up"></i></a> <div class="modal" id="modal-template"> <div class="modal-dialog"> <div class="modal-content"> <div class="row m-0 mt-1"> <div class="col-md-12"> <button type="button" class="close" data-dismiss="modal" aria-label="Close"><span aria-hidden="true">×</span></button> </div> </div> <div class="modal-body"></div> </div> </div> </div> <script src="https://cdn.waset.org/static/plugins/jquery-3.3.1.min.js"></script> <script src="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/js/bootstrap.bundle.min.js"></script> <script src="https://cdn.waset.org/static/js/site.js?v=150220211556"></script> <script> jQuery(document).ready(function() { /*jQuery.get("https://publications.waset.org/xhr/user-menu", function (response) { jQuery('#mainNavMenu').append(response); });*/ jQuery.get({ url: "https://publications.waset.org/xhr/user-menu", cache: false }).then(function(response){ jQuery('#mainNavMenu').append(response); }); }); </script> </body> </html>

CINXE.COM

Comparative Study of Al2O3 and HfO2 as Gate Dielectric on AlGaN/GaN MOSHEMTs