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diode</title> <meta name="description" content="Search results for: InGaAs diode"> <meta name="keywords" content="InGaAs diode"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none navbar-toggler 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id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="InGaAs diode"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 199</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: InGaAs diode</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">199</span> Analytical Terahertz Characterization of In0.53Ga0.47As Transistors and Homogenous Diodes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelmadjid%20Mammeri">Abdelmadjid Mammeri</a>, <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Mahi"> Fatima Zohra Mahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Luca%20Varani"> Luca Varani</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Marinchoi"> H. Marinchoi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We propose an analytical model for the admittance and the noise calculations of the InGaAs transistor and diode. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent of the small-signal admittance response is determined by the total currents and the potentials matrix relation between the gate and the drain terminals. The noise is evaluated by using the real part of the transistor/diode admittance under a small-signal perturbation. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; can give significant information about the noise frequency dependence in the InGaAs transistor and diode. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20transistors" title="InGaAs transistors">InGaAs transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode" title=" InGaAs diode"> InGaAs diode</a>, <a href="https://publications.waset.org/abstracts/search?q=admittance" title=" admittance"> admittance</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20peaks" title=" resonant peaks"> resonant peaks</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20waves" title=" plasma waves"> plasma waves</a>, <a href="https://publications.waset.org/abstracts/search?q=analytical%20model" title=" analytical model"> analytical model</a> </p> <a href="https://publications.waset.org/abstracts/45170/analytical-terahertz-characterization-of-in053ga047as-transistors-and-homogenous-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45170.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">316</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">198</span> Fabrication of InGaAs P-I-N Micro-Photodiode Sensor Array</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jyun-Hao%20Liao">Jyun-Hao Liao</a>, <a href="https://publications.waset.org/abstracts/search?q=Chien-Ju%20Chen"> Chien-Ju Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Jui%20Yu"> Chia-Jui Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=Meng%20Chyi%20Wu"> Meng Chyi Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Ching%20Wu"> Chia-Ching Wu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this letter, we reported the fabrication of InGaAs micro-photodiode sensor array with the rapid thermal diffusion (RTD) technique. The spin-on dopant source Zn was used to form the p-type region in InP layer. Through the RTD technique, the InP/InGaAs heterostructure was formed. We improved our fabrication on the p-i-n photodiode to micro size which pixel is 7.8um, and the pitch is 12.8um. The proper SiNx was deposited to form the passivation layer. The leakage current of single pixel decrease to 3.3pA at -5V, and 35fA at -10mV. The leakage current densities of each voltage are 21uA/cm² at -5V and 0.223uA/cm² at -10mV. As we focus on the wavelength from 0.9um to 1.7um, the optimized Si/Al₂O₃ bilayers are deposited to form the AR-coating. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=InGaAs" title="InGaAs">InGaAs</a>, <a href="https://publications.waset.org/abstracts/search?q=micro%20sensor%20array" title=" micro sensor array"> micro sensor array</a>, <a href="https://publications.waset.org/abstracts/search?q=p-i-n%20photodiode" title=" p-i-n photodiode"> p-i-n photodiode</a>, <a href="https://publications.waset.org/abstracts/search?q=rapid%20thermal%20diffusion" title=" rapid thermal diffusion"> rapid thermal diffusion</a>, <a href="https://publications.waset.org/abstracts/search?q=Zn%20diffusion" title=" Zn diffusion"> Zn diffusion</a> </p> <a href="https://publications.waset.org/abstracts/73769/fabrication-of-ingaas-p-i-n-micro-photodiode-sensor-array" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73769.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">318</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">197</span> The Effect of the Thermal Temperature and Injected Current on Laser Diode 808 nm Output Power</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hassan%20H.%20Abuelhassan">Hassan H. Abuelhassan</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Ali%20Badawi"> M. Ali Badawi</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdelrahman%20A.%20Elbadawi"> Abdelrahman A. Elbadawi</a>, <a href="https://publications.waset.org/abstracts/search?q=Adam%20A.%20Elbashir"> Adam A. Elbashir</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, the effect of the injected current and temperature into the output power of the laser diode module operating at 808nm were applied, studied and discussed. Low power diode laser was employed as a source. The experimental results were demonstrated and then the output power of laser diode module operating at 808nm was clearly changed by the thermal temperature and injected current. The output power increases by the increasing the injected current and temperature. We also showed that the increasing of the injected current results rising in heat, which also, results into decreasing of the laser diode output power during the highest temperature as well. The best ranges of characteristics made by diode module operating at 808nm were carefully handled and determined. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=laser%20diode" title="laser diode">laser diode</a>, <a href="https://publications.waset.org/abstracts/search?q=light%20amplification" title=" light amplification"> light amplification</a>, <a href="https://publications.waset.org/abstracts/search?q=injected%20current" title=" injected current"> injected current</a>, <a href="https://publications.waset.org/abstracts/search?q=output%20power" title=" output power"> output power</a> </p> <a href="https://publications.waset.org/abstracts/49324/the-effect-of-the-thermal-temperature-and-injected-current-on-laser-diode-808-nm-output-power" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/49324.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">387</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">196</span> Frequency Reconfigurable Multiband Patch Antenna Using PIN-Diode for ITS Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Gaurav%20Upadhyay">Gaurav Upadhyay</a>, <a href="https://publications.waset.org/abstracts/search?q=Nand%20Kishore"> Nand Kishore</a>, <a href="https://publications.waset.org/abstracts/search?q=Prashant%20Ranjan"> Prashant Ranjan</a>, <a href="https://publications.waset.org/abstracts/search?q=V.%20S.%20Tripathi"> V. S. Tripathi</a>, <a href="https://publications.waset.org/abstracts/search?q=Shivesh%20Tripathi"> Shivesh Tripathi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A frequency reconfigurable multiband antenna for intelligent transportation system (ITS) applications is proposed in this paper. A PIN-diode is used for reconfigurability. Centre frequencies are 1.38, 1.98, 2.89, 3.86, and 4.34 GHz in “ON” state of Diode and 1.56, 2.16, 2.88, 3.91 and 4.45 GHz in “OFF” state. Achieved maximum bandwidth is 18%. The maximum gain of the proposed antenna is 2.7 dBi in “ON” state and 3.95 dBi in “OFF” state of the diode. The antenna is simulated, fabricated, and tested in the lab. Measured and simulated results are in good confirmation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ITS" title="ITS">ITS</a>, <a href="https://publications.waset.org/abstracts/search?q=multiband%20antenna" title=" multiband antenna"> multiband antenna</a>, <a href="https://publications.waset.org/abstracts/search?q=PIN-diode" title=" PIN-diode"> PIN-diode</a>, <a href="https://publications.waset.org/abstracts/search?q=reconfigurable" title=" reconfigurable"> reconfigurable</a> </p> <a href="https://publications.waset.org/abstracts/84977/frequency-reconfigurable-multiband-patch-antenna-using-pin-diode-for-its-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/84977.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">347</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">195</span> A Small Signal Model for Resonant Tunneling Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rania%20M.%20Abdallah">Rania M. Abdallah</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahmed%20A.%20S.%20Dessouki"> Ahmed A. S. Dessouki</a>, <a href="https://publications.waset.org/abstracts/search?q=Moustafa%20H.%20Aly"> Moustafa H. Aly</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper has presented a new simple small signal model for a resonant tunnelling diode device. The resonant tunnelling diode equivalent circuit elements were calculated and the results led to good agreement between the calculated equivalent circuit elements and the measurement results. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=resonant%20tunnelling%20diode" title="resonant tunnelling diode">resonant tunnelling diode</a>, <a href="https://publications.waset.org/abstracts/search?q=small%20signal%20model" title=" small signal model"> small signal model</a>, <a href="https://publications.waset.org/abstracts/search?q=negative%20differential%20conductance" title=" negative differential conductance"> negative differential conductance</a>, <a href="https://publications.waset.org/abstracts/search?q=electronic%20engineering" title=" electronic engineering"> electronic engineering</a> </p> <a href="https://publications.waset.org/abstracts/5891/a-small-signal-model-for-resonant-tunneling-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/5891.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">443</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">194</span> Dependence of Photocurrent on UV Wavelength in ZnO/Pt Bottom-Contact Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Byoungho%20Lee">Byoungho Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Changmin%20Kim"> Changmin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Youngmin%20Lee"> Youngmin Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Sejoon%20Lee"> Sejoon Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Deuk%20Young%20Kim"> Deuk Young Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong dependence on the UV wavelength for its photo-response characteristics. When longer-wavelength-UV (e.g., UV-A) was illuminated on the device, the photo-current was increased by a factor of 200, compared to that under illumination of shorter-wavelength-UV (e.g., UV-C). The behavior is attributed to the wavelength-dependent UV penetration depth for ZnO. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ZnO" title="ZnO">ZnO</a>, <a href="https://publications.waset.org/abstracts/search?q=UV" title=" UV"> UV</a>, <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diode" title=" Schottky diode"> Schottky diode</a>, <a href="https://publications.waset.org/abstracts/search?q=photocurrent" title=" photocurrent"> photocurrent</a> </p> <a href="https://publications.waset.org/abstracts/45500/dependence-of-photocurrent-on-uv-wavelength-in-znopt-bottom-contact-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45500.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">256</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">193</span> Study on Concentration and Temperature Measurement with 760 nm Diode Laser in Combustion System Using Tunable Diode Laser Absorption Spectroscopy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Miyeon%20Yoo">Miyeon Yoo</a>, <a href="https://publications.waset.org/abstracts/search?q=Sewon%20Kim"> Sewon Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Changyeop%20Lee"> Changyeop Lee</a> </p> <p class="card-text"><strong>Abstract:</strong></p> It is important to measure the internal temperature or temperature distribution precisely in combustion system to increase energy efficiency and reduce the pollutants. Especially in case of large combustion systems such as power plant boiler and reheating furnace of steel making process, it is very difficult to measure those physical properties in detail. Tunable diode laser absorption spectroscopy measurement and analysis can be attractive method to overcome the difficulty. In this paper, TDLAS methods are used to measure the oxygen concentration and temperature distribution in various experimental conditions. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=tunable%20diode%20laser%20absorption%20Spectroscopy" title="tunable diode laser absorption Spectroscopy">tunable diode laser absorption Spectroscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=temperature%20distribution" title=" temperature distribution"> temperature distribution</a>, <a href="https://publications.waset.org/abstracts/search?q=gas%20concentration" title=" gas concentration"> gas concentration</a> </p> <a href="https://publications.waset.org/abstracts/3424/study-on-concentration-and-temperature-measurement-with-760-nm-diode-laser-in-combustion-system-using-tunable-diode-laser-absorption-spectroscopy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/3424.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">386</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">192</span> Fluctuations of Transfer Factor of the Mixer Based on Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Alexey%20V.%20Klyuev">Alexey V. Klyuev</a>, <a href="https://publications.waset.org/abstracts/search?q=Arkady%20V.%20Yakimov"> Arkady V. Yakimov</a>, <a href="https://publications.waset.org/abstracts/search?q=Mikhail%20I.%20Ryzhkin"> Mikhail I. Ryzhkin</a>, <a href="https://publications.waset.org/abstracts/search?q=Andrey%20V.%20Klyuev"> Andrey V. Klyuev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Fluctuations of Schottky diode parameters in a structure of the mixer are investigated. These fluctuations are manifested in two ways. At the first, they lead to fluctuations in the transfer factor that is lead to the amplitude fluctuations in the signal of intermediate frequency. On the basis of the measurement data of 1/f noise of the diode at forward current, the estimation of a spectrum of relative fluctuations in transfer factor of the mixer is executed. Current dependence of the spectrum of relative fluctuations in transfer factor of the mixer and dependence of the spectrum of relative fluctuations in transfer factor of the mixer on the amplitude of the heterodyne signal are investigated. At the second, fluctuations in parameters of the diode lead to the occurrence of 1/f noise in the output signal of the mixer. This noise limits the sensitivity of the mixer to the value of received signal. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=current-voltage%20characteristic" title="current-voltage characteristic">current-voltage characteristic</a>, <a href="https://publications.waset.org/abstracts/search?q=fluctuations" title=" fluctuations"> fluctuations</a>, <a href="https://publications.waset.org/abstracts/search?q=mixer" title=" mixer"> mixer</a>, <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diode" title=" Schottky diode"> Schottky diode</a>, <a href="https://publications.waset.org/abstracts/search?q=1%2Ff%20noise" title=" 1/f noise"> 1/f noise</a> </p> <a href="https://publications.waset.org/abstracts/37525/fluctuations-of-transfer-factor-of-the-mixer-based-on-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/37525.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">586</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">191</span> Powerful Laser Diode Matrixes for Active Vision Systems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Dzmitry%20M.%20Kabanau">Dzmitry M. Kabanau</a>, <a href="https://publications.waset.org/abstracts/search?q=Vladimir%20V.%20Kabanov"> Vladimir V. Kabanov</a>, <a href="https://publications.waset.org/abstracts/search?q=Yahor%20V.%20Lebiadok"> Yahor V. Lebiadok</a>, <a href="https://publications.waset.org/abstracts/search?q=Denis%20V.%20Shabrov"> Denis V. Shabrov</a>, <a href="https://publications.waset.org/abstracts/search?q=Pavel%20V.%20Shpak"> Pavel V. Shpak</a>, <a href="https://publications.waset.org/abstracts/search?q=Gevork%20T.%20Mikaelyan"> Gevork T. Mikaelyan</a>, <a href="https://publications.waset.org/abstracts/search?q=Alexandr%20P.%20Bunichev"> Alexandr P. Bunichev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=active%20vision%20systems" title="active vision systems">active vision systems</a>, <a href="https://publications.waset.org/abstracts/search?q=laser%20diode%20matrixes" title=" laser diode matrixes"> laser diode matrixes</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20properties" title=" thermal properties"> thermal properties</a>, <a href="https://publications.waset.org/abstracts/search?q=radiation%20divergence" title=" radiation divergence"> radiation divergence</a> </p> <a href="https://publications.waset.org/abstracts/19451/powerful-laser-diode-matrixes-for-active-vision-systems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19451.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">612</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">190</span> Room Temperature Lasing from InGaAs Quantum Well Nanowires on Silicon-On-Insulator Substrates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Balthazar%20Temu">Balthazar Temu</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhao%20Yan"> Zhao Yan</a>, <a href="https://publications.waset.org/abstracts/search?q=Bogdan-Petrin%20Ratiu"> Bogdan-Petrin Ratiu</a>, <a href="https://publications.waset.org/abstracts/search?q=Sang%20Soon%20Oh"> Sang Soon Oh</a>, <a href="https://publications.waset.org/abstracts/search?q=Qiang%20Li"> Qiang Li</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Quantum confinement can be used to increase efficiency and control the emitted spectra in lasers and LEDs. In semiconductor nanowires, quantum confinement can be achieved in the axial direction by stacking multiple quantum disks or in the radial direction by forming a core-shell structure. In this work we demonstrate room temperature lasing in topological photonic crystal nanowire array lasers by using the InGaAs radial quantum well as the gain material. The nanowires with the GaAs/ InGaAs/ InGaP quantum well structure are arranged in a deformed honeycomb lattice, forming a photonic crystal surface emitting laser (PCSEL) . Under optical pumping we show that the PCSEL lase at the wavelength of 1001 nm (undeformed pattern) and 966 nm (stretched pattern), with the lasing threshold of 103 µJ〖/cm 〗^2. We compare the lasing wavelengths from devices with three different nanowire diameters for undeformed compressed and stretched devices, showing that the lasing wavelength increases as the nanowire diameter increases. The impact of deforming the honeycomb pattern is studied, where it was found out that the lasing wavelengths of undeformed devices are always larger than the corresponding stretched or compressed devices with the same nanowire diameter. Using photoluminescence results and numerical simulations on the field profile and the quality factors of the devices, we establish that the lasing of the device is from the radial quantum well structure. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=honeycomb%20PCSEL" title="honeycomb PCSEL">honeycomb PCSEL</a>, <a href="https://publications.waset.org/abstracts/search?q=nanowire%20laser" title=" nanowire laser"> nanowire laser</a>, <a href="https://publications.waset.org/abstracts/search?q=photonic%20crystal%20laser" title=" photonic crystal laser"> photonic crystal laser</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20well%20laser" title=" quantum well laser"> quantum well laser</a> </p> <a href="https://publications.waset.org/abstracts/193549/room-temperature-lasing-from-ingaas-quantum-well-nanowires-on-silicon-on-insulator-substrates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/193549.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">12</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">189</span> Characterization of InP Semiconductor Quantum Dot Laser Diode after Am-Be Neutron Irradiation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdulmalek%20Marwan%20Rajkhan">Abdulmalek Marwan Rajkhan</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20S.%20Al%20Ghamdi"> M. S. Al Ghamdi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohammed%20Damoum"> Mohammed Damoum</a>, <a href="https://publications.waset.org/abstracts/search?q=Essam%20Banoqitah"> Essam Banoqitah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper is about the Am-Be neutron source irradiation of the InP Quantum Dot Laser diode. A QD LD was irradiated for 24 hours and 48 hours. The laser underwent IV characterization experiments before and after the first and second irradiations. A computer simulation using GAMOS helped in analyzing the given results from IV curves. The results showed an improvement in the QD LD series resistance, current density, and overall ideality factor at all measured temperatures. This is explained by the activation of the QD LD Indium composition to Strontium, ionization of the compound QD LD materials, and the energy deposited to the QD LD. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20dot%20laser%20diode%20irradiation" title="quantum dot laser diode irradiation">quantum dot laser diode irradiation</a>, <a href="https://publications.waset.org/abstracts/search?q=effect%20of%20radiation%20on%20QD%20LD" title=" effect of radiation on QD LD"> effect of radiation on QD LD</a>, <a href="https://publications.waset.org/abstracts/search?q=Am-Be%20irradiation%20effect%20on%20SC%20QD%20LD" title=" Am-Be irradiation effect on SC QD LD"> Am-Be irradiation effect on SC QD LD</a> </p> <a href="https://publications.waset.org/abstracts/178642/characterization-of-inp-semiconductor-quantum-dot-laser-diode-after-am-be-neutron-irradiation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/178642.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">62</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">188</span> Electrical Characterization of Hg/n-bulk GaN Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Nabil">B. Nabil</a>, <a href="https://publications.waset.org/abstracts/search?q=O.%20Zahir"> O. Zahir</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20Abdelaziz"> R. Abdelaziz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We present the results of electrical characterizations current-voltage and capacity-voltage implementation of a method of making a Schottky diode on bulk gallium nitride doped n. We made temporary Schottky contact of Mercury (Hg) and an ohmic contact of silver (Ag), the electrical characterizations current-voltage (I-V) and capacitance-voltage (C-V) allows us to determine the difference parameters of our structure (Hg /n-GaN) as the barrier height (ΦB), the ideality factor (n), the series resistor (Rs), the voltage distribution (Vd), the doping of the substrate (Nd) and density of interface states (Nss). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bulk%20Gallium%20nitride" title="Bulk Gallium nitride">Bulk Gallium nitride</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20characterization" title=" electrical characterization"> electrical characterization</a>, <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diode" title=" Schottky diode"> Schottky diode</a>, <a href="https://publications.waset.org/abstracts/search?q=series%20resistance" title=" series resistance"> series resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=substrate%20doping" title=" substrate doping"> substrate doping</a> </p> <a href="https://publications.waset.org/abstracts/1498/electrical-characterization-of-hgn-bulk-gan-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/1498.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">485</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">187</span> The Nonlinear Optical Properties Analysis of AlPc-Cl Organic Compound</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Benhaliliba">M. Benhaliliba</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Ben%20Ahmed"> A. Ben Ahmed</a>, <a href="https://publications.waset.org/abstracts/search?q=C.E.%20Benouis"> C.E. Benouis</a>, <a href="https://publications.waset.org/abstracts/search?q=A.Ayeshamariam"> A.Ayeshamariam</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The properties of nonlinear optical NLOs are examined, and the results confirm the 2.19 eV HOMO-LUMO mismatch. In the Al-Pc cluster, certain functional bond lengths and bond angles have been observed. The Quantum chemical method (DFT and TD-DFT) and Vibrational spectra properties of AlPc are studied. X-ray pattern reveals the crystalline structure along with the (242) orientation of the AlPc organic thin layer. UV-Vis shows the frequency selective behavior of the device. The absorbance of such layer exhibits a high value within the UV range and two consecutive peaks within visible range. Spin coating is used to make an organic diode based on the Aluminium-phthalocynanine (AlPc-Cl) molecule. Under dark and light conditions, electrical characterization of Ag/AlPc/Si/Au is obtained. The diode's high rectifying capability (about 1x104) is subsequently discovered. While the height barrier is constant and saturation current is greatly reliant on light, the ideality factor of such a diode increases to 6.9 which confirms the non-ideality of such a device. The Cheung-Cheung technique is employed to further the investigation and gain additional data such as series resistance and barrier height. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=AlPc-Cl%20organic%20material" title="AlPc-Cl organic material">AlPc-Cl organic material</a>, <a href="https://publications.waset.org/abstracts/search?q=nonlinear%20optic" title=" nonlinear optic"> nonlinear optic</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20filter" title=" optical filter"> optical filter</a>, <a href="https://publications.waset.org/abstracts/search?q=diode" title=" diode"> diode</a> </p> <a href="https://publications.waset.org/abstracts/148773/the-nonlinear-optical-properties-analysis-of-alpc-cl-organic-compound" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/148773.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">138</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">186</span> Investigation of the Effects of Gamma Radiation on the Electrically Active Defects in InAs/InGaAs Quantum Dots Laser Structures Grown by Molecular Beam Epitaxy on GaAs Substrates Using Deep Level Transient Spectroscopy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Al%20Huwayz">M. Al Huwayz</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Salhi"> A. Salhi</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Alhassan"> S. Alhassan</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Alotaibi"> S. Alotaibi</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Almalki"> A. Almalki</a>, <a href="https://publications.waset.org/abstracts/search?q=M.Almunyif"> M.Almunyif</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Alhassni"> A. Alhassni</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Henini"> M. Henini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recently, there has been much research carried out to investigate quantum dots (QDs) lasers with the aim to increase the gain of quantum well lasers. However, one of the difficulties with these structures is that electrically active defects can lead to serious issues in the performance of these devices. It is therefore essential to fully understand the types of defects introduced during the growth and/or the fabrication process. In this study, the effects of Gamma radiation on the electrically active defects in p-i-n InAs/InGaAsQDs laser structures grown by Molecular Beam Epitaxy (MBE) technique on GaAs substrates were investigated. Deep Level Transient Spectroscopy (DLTS), current-voltage (I-V), and capacitance-voltage (C-V) measurements were performed to explore these effects on the electrical properties of these QDs lasers. I-V measurements showed that as-grown sample had better electrical properties than the irradiated sample. However, DLTS and Laplace DLTS measurements at different reverse biases revealed that the defects in the-region of the p-i-n structures were decreased in the irradiated sample. In both samples, a trap with an activation energy of ~ 0.21 eV was assigned to the well-known defect M1 in GaAs layers <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20dots%20laser%20structures" title="quantum dots laser structures">quantum dots laser structures</a>, <a href="https://publications.waset.org/abstracts/search?q=gamma%20radiation" title=" gamma radiation"> gamma radiation</a>, <a href="https://publications.waset.org/abstracts/search?q=DLTS" title=" DLTS"> DLTS</a>, <a href="https://publications.waset.org/abstracts/search?q=defects" title=" defects"> defects</a>, <a href="https://publications.waset.org/abstracts/search?q=nAs%2FIngaAs" title=" nAs/IngaAs"> nAs/IngaAs</a> </p> <a href="https://publications.waset.org/abstracts/141942/investigation-of-the-effects-of-gamma-radiation-on-the-electrically-active-defects-in-inasingaas-quantum-dots-laser-structures-grown-by-molecular-beam-epitaxy-on-gaas-substrates-using-deep-level-transient-spectroscopy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/141942.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">187</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">185</span> Reconfigurable Multiband Meandered Line Antenna</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=D.%20Rama%20Krishna">D. Rama Krishna</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.%20Pandu%20Rangaiah"> Y. Pandu Rangaiah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents the design of multiband reconfigurable antenna using PIN diodes for four iterations and all the four iterations have been validated by measuring return loss and pattern measurements of developed prototype antenna. The simulated and experimental data have demonstrated the concepts of a multiband reconfigurable antenna by switching OFF and ON of PIN diodes for multiple band frequencies. The technique has taken the advantage of a different number of radiating lengths with the use of PIN diode switches, each configuration resonating at multiband frequencies. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=frequency%20reconfigurable" title="frequency reconfigurable">frequency reconfigurable</a>, <a href="https://publications.waset.org/abstracts/search?q=meandered%20line%20multiband%20antenna" title=" meandered line multiband antenna"> meandered line multiband antenna</a>, <a href="https://publications.waset.org/abstracts/search?q=PIN%20diode" title=" PIN diode"> PIN diode</a>, <a href="https://publications.waset.org/abstracts/search?q=multiband%20frequencies" title=" multiband frequencies"> multiband frequencies</a> </p> <a href="https://publications.waset.org/abstracts/10408/reconfigurable-multiband-meandered-line-antenna" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/10408.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">387</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">184</span> Characterization of the in 0.53 Ga 0.47 as n+nn+ Photodetectors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Mahi">Fatima Zohra Mahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Luca%20Varani"> Luca Varani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detectivity for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed. The responsivity and the detectivity are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=detectivity" title="detectivity">detectivity</a>, <a href="https://publications.waset.org/abstracts/search?q=photodetectors" title=" photodetectors"> photodetectors</a>, <a href="https://publications.waset.org/abstracts/search?q=continuity%20equation" title=" continuity equation"> continuity equation</a>, <a href="https://publications.waset.org/abstracts/search?q=current%20noise" title=" current noise"> current noise</a> </p> <a href="https://publications.waset.org/abstracts/13905/characterization-of-the-in-053-ga-047-as-nnn-photodetectors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/13905.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">644</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">183</span> Study of the Energy Levels in the Structure of the Laser Diode GaInP</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelali%20Laid">Abdelali Laid</a>, <a href="https://publications.waset.org/abstracts/search?q=Abid%20Hamza"> Abid Hamza</a>, <a href="https://publications.waset.org/abstracts/search?q=Zeroukhi%20Houari"> Zeroukhi Houari</a>, <a href="https://publications.waset.org/abstracts/search?q=Sayah%20Naimi"> Sayah Naimi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work relates to the study of the energy levels and the optimization of the Parameter intrinsic (a number of wells and their widths, width of barrier of potential, index of refraction etc.) and extrinsic (temperature, pressure) in the Structure laser diode containing the structure GaInP. The methods of calculation used; - method of the empirical pseudo potential to determine the electronic structures of bands, - graphic method for optimization. The found results are in concord with those of the experiment and the theory. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=semi-conductor" title="semi-conductor">semi-conductor</a>, <a href="https://publications.waset.org/abstracts/search?q=GaInP%2FAlGaInP" title=" GaInP/AlGaInP"> GaInP/AlGaInP</a>, <a href="https://publications.waset.org/abstracts/search?q=pseudopotential" title=" pseudopotential"> pseudopotential</a>, <a href="https://publications.waset.org/abstracts/search?q=energy" title=" energy"> energy</a>, <a href="https://publications.waset.org/abstracts/search?q=alliages" title=" alliages"> alliages</a> </p> <a href="https://publications.waset.org/abstracts/36433/study-of-the-energy-levels-in-the-structure-of-the-laser-diode-gainp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/36433.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">492</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">182</span> SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20Lakrim">A. Lakrim</a>, <a href="https://publications.waset.org/abstracts/search?q=D.%20Tahri"> D. Tahri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=SiC%20MPS%20diode" title="SiC MPS diode">SiC MPS diode</a>, <a href="https://publications.waset.org/abstracts/search?q=electro-thermal" title=" electro-thermal"> electro-thermal</a>, <a href="https://publications.waset.org/abstracts/search?q=SPICE%20model" title=" SPICE model"> SPICE model</a>, <a href="https://publications.waset.org/abstracts/search?q=behavioral%20macro-model" title=" behavioral macro-model"> behavioral macro-model</a> </p> <a href="https://publications.waset.org/abstracts/11540/sic-merged-pin-and-schottky-mps-power-diodes-electrothermal-modeling-in-spice" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/11540.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">407</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">181</span> Chaotic Electronic System with Lambda Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=George%20Mahalu">George Mahalu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The Chua diode has been configured over time in various ways, using electronic structures like operational amplifiers (AOs) or devices with gas or semiconductors. When discussing the use of semiconductor devices, tunnel diodes (Esaki diodes) are most often considered, and more recently, transistorized configurations such as lambda diodes. The paperwork proposed here uses in the modeling a lambda diode type configuration consisting of two junction field effect transistors (JFET). The original scheme is created in the MULTISIM electronic simulation environment and is analyzed in order to identify the conditions for the appearance of evolutionary unpredictability specific to nonlinear dynamic systems with chaos-induced behavior. The chaotic deterministic oscillator is one autonomous type, a fact that places it in the class of Chua’s type oscillators, the only significant and most important difference being the presence of a nonlinear device like the one mentioned structure above. The chaotic behavior is identified both by means of strange attractor-type trajectories and visible during the simulation and by highlighting the hypersensitivity of the system to small variations of one of the input parameters. The results obtained through simulation and the conclusions drawn are useful in the further research of ways to implement such constructive electronic solutions in theoretical and practical applications related to modern small signal amplification structures, to systems for encoding and decoding messages through various modern ways of communication, as well as new structures that can be imagined both in modern neural networks and in those for the physical implementation of some requirements imposed by current research with the aim of obtaining practically usable solutions in quantum computing and quantum computers. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chua" title="chua">chua</a>, <a href="https://publications.waset.org/abstracts/search?q=diode" title=" diode"> diode</a>, <a href="https://publications.waset.org/abstracts/search?q=memristor" title=" memristor"> memristor</a>, <a href="https://publications.waset.org/abstracts/search?q=chaos" title=" chaos"> chaos</a> </p> <a href="https://publications.waset.org/abstracts/164571/chaotic-electronic-system-with-lambda-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/164571.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">88</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">180</span> An Improved Visible Range Absorption Spectroscopy on Soil Macronutrient </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Suhaila%20Isaak">Suhaila Isaak</a>, <a href="https://publications.waset.org/abstracts/search?q=Yusmeeraz%20Yusof"> Yusmeeraz Yusof</a>, <a href="https://publications.waset.org/abstracts/search?q=Khairunnisa%20Mohd%20Yusof"> Khairunnisa Mohd Yusof</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahmad%20Safuan%20Abdul%20Rashid"> Ahmad Safuan Abdul Rashid</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Soil fertility is commonly evaluated by soil macronutrients such as nitrate, potassium, and phosphorus contents. Optical spectroscopy is an emerging technology which is rapid and simple has been widely used in agriculture to measure soil fertility. For visible and near infrared absorption spectroscopy, the absorbed light level in is useful for soil macro-nutrient measurement. This is because the absorption of light in a soil sample influences sensitivity of the measurement. This paper reports the performance of visible and near infrared absorption spectroscopy in the 400–1400 nm wavelength range using light-emitting diode as the excitation light source to predict the soil macronutrient content of nitrate, potassium, and phosphorus. The experimental results show an improved linear regression analysis of various soil specimens based on the Beer–Lambert law to determine sensitivity of soil spectroscopy by evaluating the absorption of characteristic peaks emitted from a light-emitting diode and detected by high sensitivity optical spectrometer. This would denote in developing a simple and low-cost soil spectroscopy with light-emitting diode for future implementation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=macronutrients%20absorption" title="macronutrients absorption">macronutrients absorption</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20spectroscopy" title=" optical spectroscopy"> optical spectroscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=soil" title=" soil"> soil</a>, <a href="https://publications.waset.org/abstracts/search?q=absorption" title=" absorption"> absorption</a> </p> <a href="https://publications.waset.org/abstracts/78092/an-improved-visible-range-absorption-spectroscopy-on-soil-macronutrient" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/78092.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">293</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">179</span> Chaotic Electronic System with Lambda Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=George%20Mahalu">George Mahalu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The Chua diode has been configured over time in various ways, using electronic structures like as operational amplifiers (OAs) or devices with gas or semiconductors. When discussing the use of semiconductor devices, tunnel diodes (Esaki diodes) are most often considered, and more recently, transistorized configurations such as lambda diodes. The paper-work proposed here uses in the modeling a lambda diode type configuration consisting of two Junction Field Effect Transistors (JFET). The original scheme is created in the MULTISIM electronic simulation environment and is analyzed in order to identify the conditions for the appearance of evolutionary unpredictability specific to nonlinear dynamic systems with chaos-induced behavior. The chaotic deterministic oscillator is one autonomous type, a fact that places it in the class of Chua’s type oscillators, the only significant and most important difference being the presence of a nonlinear device like the one mentioned structure above. The chaotic behavior is identified both by means of strange attractor-type trajectories and visible during the simulation and by highlighting the hypersensitivity of the system to small variations of one of the input parameters. The results obtained through simulation and the conclusions drawn are useful in the further research of ways to implement such constructive electronic solutions in theoretical and practical applications related to modern small signal amplification structures, to systems for encoding and decoding messages through various modern ways of communication, as well as new structures that can be imagined both in modern neural networks and in those for the physical implementation of some requirements imposed by current research with the aim of obtaining practically usable solutions in quantum computing and quantum computers. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chaos" title="chaos">chaos</a>, <a href="https://publications.waset.org/abstracts/search?q=lambda%20diode" title=" lambda diode"> lambda diode</a>, <a href="https://publications.waset.org/abstracts/search?q=strange%20attractor" title=" strange attractor"> strange attractor</a>, <a href="https://publications.waset.org/abstracts/search?q=nonlinear%20system" title=" nonlinear system"> nonlinear system</a> </p> <a href="https://publications.waset.org/abstracts/162251/chaotic-electronic-system-with-lambda-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/162251.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">86</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">178</span> Simulation of I–V Characteristics of Lateral PIN Diode on Polysilicon Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelaziz%20Rabhi">Abdelaziz Rabhi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Amrani"> Mohamed Amrani</a>, <a href="https://publications.waset.org/abstracts/search?q=Abderrazek%20Ziane"> Abderrazek Ziane</a>, <a href="https://publications.waset.org/abstracts/search?q=Nabil%20Belkadi"> Nabil Belkadi</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdelraouf%20Hocini"> Abdelraouf Hocini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a bedimensional simulation program of the electric characteristics of reverse biased lateral polysilicon PIN diode is presented. In this case we have numerically solved the system of partial differential equations formed by Poisson's equation and both continuity equations that take into account the effect of impact ionization. Therefore we will obtain the current-voltage characteristics (I-V) of the reverse-biased structure which may include the effect of breakdown.The geometrical model assumes that the polysilicon layer is composed by a succession of defined mean grain size crystallites, separated by lateral grain boundaries which are parallel to the metallurgic junction. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=breakdown" title="breakdown">breakdown</a>, <a href="https://publications.waset.org/abstracts/search?q=polycrystalline%20silicon" title=" polycrystalline silicon"> polycrystalline silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=PIN" title=" PIN"> PIN</a>, <a href="https://publications.waset.org/abstracts/search?q=grain" title=" grain"> grain</a>, <a href="https://publications.waset.org/abstracts/search?q=impact%20ionization" title=" impact ionization"> impact ionization</a> </p> <a href="https://publications.waset.org/abstracts/1337/simulation-of-i-v-characteristics-of-lateral-pin-diode-on-polysilicon-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/1337.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">381</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">177</span> Flip-Chip Bonding for Monolithic of Matrix-Addressable GaN-Based Micro-Light-Emitting Diodes Array</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chien-Ju%20Chen">Chien-Ju Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Jui%20Yu"> Chia-Jui Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=Jyun-Hao%20Liao"> Jyun-Hao Liao</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Ching%20Wu"> Chia-Ching Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Meng-Chyi%20Wu"> Meng-Chyi Wu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A 64 × 64 GaN-based micro-light-emitting diode array (μLEDA) with 20 μm in pixel size and 40 μm in pitch by flip-chip bonding (FCB) is demonstrated in this study. Besides, an underfilling (UF) technology is applied to the process for improving the uniformity of device. With those configurations, good characteristics are presented, operation voltage and series resistance of a pixel in the 450 nm flip chip μLEDA are 2.89 V and 1077Ω (4.3 mΩ-cm²) at 25 A/cm², respectively. The μLEDA can sustain higher current density compared to conventional LED, and the power of the device is 9.5 μW at 100 μA and 0.42 mW at 20 mA. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN" title="GaN">GaN</a>, <a href="https://publications.waset.org/abstracts/search?q=micro-light-emitting%20diode%20array%28%CE%BCLEDA%29" title=" micro-light-emitting diode array(μLEDA)"> micro-light-emitting diode array(μLEDA)</a>, <a href="https://publications.waset.org/abstracts/search?q=flip-chip%20bonding" title=" flip-chip bonding"> flip-chip bonding</a>, <a href="https://publications.waset.org/abstracts/search?q=underfilling" title=" underfilling"> underfilling</a> </p> <a href="https://publications.waset.org/abstracts/73765/flip-chip-bonding-for-monolithic-of-matrix-addressable-gan-based-micro-light-emitting-diodes-array" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73765.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">423</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">176</span> High-Performance Liquid Chromatographic Method with Diode Array Detection (HPLC-DAD) Analysis of Naproxen and Omeprazole Active Isomers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Marwa%20Ragab">Marwa Ragab</a>, <a href="https://publications.waset.org/abstracts/search?q=Eman%20El-Kimary"> Eman El-Kimary</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Chiral separation and analysis of omeprazole and naproxen enantiomers in tablets were achieved using high-performance liquid chromatographic method with diode array detection (HPLC-DAD). Kromasil Cellucoat chiral column was used as a stationary phase for separation and the eluting solvent consisted of hexane, isopropanol and trifluoroacetic acid in a ratio of: 90, 9.9 and 0.1, respectively. The chromatographic system was suitable for the enantiomeric separation and analysis of active isomers of the drugs. Resolution values of 2.17 and 3.84 were obtained after optimization of the chromatographic conditions for omeprazole and naproxen isomers, respectively. The determination of S-isomers of each drug in their dosage form was fully validated. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chiral%20analysis" title="chiral analysis">chiral analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=esomeprazole" title=" esomeprazole"> esomeprazole</a>, <a href="https://publications.waset.org/abstracts/search?q=S-Naproxen" title=" S-Naproxen"> S-Naproxen</a>, <a href="https://publications.waset.org/abstracts/search?q=HPLC-DAD" title=" HPLC-DAD"> HPLC-DAD</a> </p> <a href="https://publications.waset.org/abstracts/61903/high-performance-liquid-chromatographic-method-with-diode-array-detection-hplc-dad-analysis-of-naproxen-and-omeprazole-active-isomers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/61903.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">301</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">175</span> Comparison of Artificial Neural Networks and Statistical Classifiers in Olive Sorting Using Near-Infrared Spectroscopy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=I%CC%87smail%20Kavd%C4%B1r">İsmail Kavdır</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Burak%20B%C3%BCy%C3%BCkcan"> M. Burak Büyükcan</a>, <a href="https://publications.waset.org/abstracts/search?q=Ferhat%20Kurtulmu%C5%9F"> Ferhat Kurtulmuş</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Table olive is a valuable product especially in Mediterranean countries. It is usually consumed after some fermentation process. Defects happened naturally or as a result of an impact while olives are still fresh may become more distinct after processing period. Defected olives are not desired both in table olive and olive oil industries as it will affect the final product quality and reduce market prices considerably. Therefore it is critical to sort table olives before processing or even after processing according to their quality and surface defects. However, doing manual sorting has many drawbacks such as high expenses, subjectivity, tediousness and inconsistency. Quality criterions for green olives were accepted as color and free of mechanical defects, wrinkling, surface blemishes and rotting. In this study, it was aimed to classify fresh table olives using different classifiers and NIR spectroscopy readings and also to compare the classifiers. For this purpose, green (Ayvalik variety) olives were classified based on their surface feature properties such as defect-free, with bruised defect and with fly defect using FT-NIR spectroscopy and classification algorithms such as artificial neural networks, ident and cluster. Bruker multi-purpose analyzer (MPA) FT-NIR spectrometer (Bruker Optik, GmbH, Ettlingen Germany) was used for spectral measurements. The spectrometer was equipped with InGaAs detectors (TE-InGaAs internal for reflectance and RT-InGaAs external for transmittance) and a 20-watt high intensity tungsten–halogen NIR light source. Reflectance measurements were performed with a fiber optic probe (type IN 261) which covered the wavelengths between 780–2500 nm, while transmittance measurements were performed between 800 and 1725 nm. Thirty-two scans were acquired for each reflectance spectrum in about 15.32 s while 128 scans were obtained for transmittance in about 62 s. Resolution was 8 cm⁻¹ for both spectral measurement modes. Instrument control was done using OPUS software (Bruker Optik, GmbH, Ettlingen Germany). Classification applications were performed using three classifiers; Backpropagation Neural Networks, ident and cluster classification algorithms. For these classification applications, Neural Network tool box in Matlab, ident and cluster modules in OPUS software were used. Classifications were performed considering different scenarios; two quality conditions at once (good vs bruised, good vs fly defect) and three quality conditions at once (good, bruised and fly defect). Two spectrometer readings were used in classification applications; reflectance and transmittance. Classification results obtained using artificial neural networks algorithm in discriminating good olives from bruised olives, from olives with fly defect and from the olive group including both bruised and fly defected olives with success rates respectively changing between 97 and 99%, 61 and 94% and between 58.67 and 92%. On the other hand, classification results obtained for discriminating good olives from bruised ones and also for discriminating good olives from fly defected olives using the ident method ranged between 75-97.5% and 32.5-57.5%, respectfully; results obtained for the same classification applications using the cluster method ranged between 52.5-97.5% and between 22.5-57.5%. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=artificial%20neural%20networks" title="artificial neural networks">artificial neural networks</a>, <a href="https://publications.waset.org/abstracts/search?q=statistical%20classifiers" title=" statistical classifiers"> statistical classifiers</a>, <a href="https://publications.waset.org/abstracts/search?q=NIR%20spectroscopy" title=" NIR spectroscopy"> NIR spectroscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=reflectance" title=" reflectance"> reflectance</a>, <a href="https://publications.waset.org/abstracts/search?q=transmittance" title=" transmittance"> transmittance</a> </p> <a href="https://publications.waset.org/abstracts/74775/comparison-of-artificial-neural-networks-and-statistical-classifiers-in-olive-sorting-using-near-infrared-spectroscopy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/74775.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">246</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">174</span> A Study on Evaluation for Performance Verification of Ni-63 Radioisotope Betavoltaic Battery</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Youngmok%20Yun">Youngmok Yun</a>, <a href="https://publications.waset.org/abstracts/search?q=Bosung%20Kim"> Bosung Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Sungho%20Lee"> Sungho Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyeongsu%20Jeon"> Kyeongsu Jeon</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyunwook%20Hwangbo"> Hyunwook Hwangbo</a>, <a href="https://publications.waset.org/abstracts/search?q=Byounggun%20Choi"> Byounggun Choi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A betavoltaic battery converts nuclear energy released as beta particles (β-) directly into electrical energy. Betavoltaic cells are analogous to photovoltaic cells. The beta particle’s kinetic energy enters a p-n junction and creates electron-hole pairs. Subsequently, the built-in potential of the p-n junction accelerates the electrons and ions to their respective collectors. The major challenges are electrical conversion efficiencies and exact evaluation. In this study, the performance of betavoltaic battery was evaluated. The betavoltaic cell was evaluated in the same condition as radiation from radioactive isotope using by FE-SEM(field emission scanning electron microscope). The average energy of the radiation emitted from the Ni-63 radioisotope is 17.42 keV. FE-SEM is capable of emitting an electron beam of 1-30keV. Therefore, it is possible to evaluate betavoltaic cell without radioactive isotopes. The betavoltaic battery consists of radioisotope that is physically connected on the surface of Si-based PN diode. The performance of betavoltaic battery can be estimated by the efficiency of PN diode unit cell. The current generated by scanning electron microscope with fixed accelerating voltage (17keV) was measured by using faraday cup. Electrical characterization of the p-n junction diode was performed by using Nano Probe Work Station and I-V measurement system. The output value of the betavoltaic cells developed by this research team was 0.162 μw/cm2 and the efficiency was 1.14%. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=betavoltaic" title="betavoltaic">betavoltaic</a>, <a href="https://publications.waset.org/abstracts/search?q=nuclear" title=" nuclear"> nuclear</a>, <a href="https://publications.waset.org/abstracts/search?q=battery" title=" battery"> battery</a>, <a href="https://publications.waset.org/abstracts/search?q=Ni-63" title=" Ni-63"> Ni-63</a>, <a href="https://publications.waset.org/abstracts/search?q=radio-isotope" title=" radio-isotope"> radio-isotope</a> </p> <a href="https://publications.waset.org/abstracts/50012/a-study-on-evaluation-for-performance-verification-of-ni-63-radioisotope-betavoltaic-battery" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/50012.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">258</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">173</span> Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Au/GaN Schottky diodes </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelaziz%20Rabehi">Abdelaziz Rabehi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The current–voltage (I–V) characteristics of Au/GaN Schottky diodes were measured at room temperature. In addition, capacitance–voltage–frequency (C–V–f) characteristics are investigated by considering the interface states (Nss) at frequency range 100 kHz to 1 MHz. From the I–V characteristics of the Schottky diode, ideality factor (n) and barrier height (Φb) values of 1.22 and 0.56 eV, respectively, were obtained from a forward bias I–V plot. In addition, the interface states distribution profile as a function of (Ess − Ev) was extracted from the forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (Φe) for the Schottky diode. The C–V curves gave a barrier height value higher than those obtained from I–V measurements. This discrepancy is due to the different nature of the I–V and C–V measurement techniques. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diodes" title="Schottky diodes">Schottky diodes</a>, <a href="https://publications.waset.org/abstracts/search?q=frequency%20dependence" title=" frequency dependence"> frequency dependence</a>, <a href="https://publications.waset.org/abstracts/search?q=barrier%20height" title=" barrier height"> barrier height</a>, <a href="https://publications.waset.org/abstracts/search?q=interface%20states" title=" interface states "> interface states </a> </p> <a href="https://publications.waset.org/abstracts/5577/characterization-of-current-voltage-i-v-and-capacitance-voltage-frequency-c-v-f-features-of-augan-schottky-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/5577.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">302</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">172</span> AI-Driven Strategies for Sustainable Electronics Repair: A Case Study in Energy Efficiency</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Badiy%20Elmabrouk">Badiy Elmabrouk</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdelhamid%20Boujarif"> Abdelhamid Boujarif</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhiguo%20Zeng"> Zhiguo Zeng</a>, <a href="https://publications.waset.org/abstracts/search?q=Stephane%20Borrel"> Stephane Borrel</a>, <a href="https://publications.waset.org/abstracts/search?q=Robert%20Heidsieck"> Robert Heidsieck</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In an era where sustainability is paramount, this paper introduces a machine learning-driven testing protocol to accurately predict diode failures, merging reliability engineering with failure physics to enhance repair operations efficiency. Our approach refines the burn-in process, significantly curtailing its duration, which not only conserves energy but also elevates productivity and mitigates component wear. A case study from GE HealthCare’s repair center vividly demonstrates the method’s effectiveness, recording a high prediction of diode failures and a substantial decrease in energy consumption that translates to an annual reduction of 6.5 Tons of CO2 emissions. This advancement sets a benchmark for environmentally conscious practices in the electronics repair sector. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=maintenance" title="maintenance">maintenance</a>, <a href="https://publications.waset.org/abstracts/search?q=burn-in" title=" burn-in"> burn-in</a>, <a href="https://publications.waset.org/abstracts/search?q=failure%20physics" title=" failure physics"> failure physics</a>, <a href="https://publications.waset.org/abstracts/search?q=reliability%20testing" title=" reliability testing"> reliability testing</a> </p> <a href="https://publications.waset.org/abstracts/181584/ai-driven-strategies-for-sustainable-electronics-repair-a-case-study-in-energy-efficiency" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/181584.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">68</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">171</span> Investigating the Energy Gap and Wavelength of (AlₓGa₁₋ₓAs)ₘ/(GaAs)ₙ Superlattices in Terms of Material Thickness and Al Mole Fraction Using Empirical Tight-Binding Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Matineh%20Sadat%20Hosseini%20Gheidari">Matineh Sadat Hosseini Gheidari</a>, <a href="https://publications.waset.org/abstracts/search?q=Vahid%20Reza%20Yazdanpanah"> Vahid Reza Yazdanpanah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we used the empirical tight-binding method (ETBM) with sp3s* approximation and considering the first nearest neighbor with spin-orbit interactions in order to model superlattice structure (SLS) of (AlₓGa₁₋ₓAs)ₘ/(GaAs)ₙ grown on GaAs (100) substrate at 300K. In the next step, we investigated the behavior of the energy gap and wavelength of this superlattice in terms of different thicknesses of core materials and Al mole fractions. As a result of this survey, we found out that as the Al composition increases, the energy gap of this superlattice has an upward trend and ranges from 1.42-1.63 eV. Also, according to the wavelength range that we gained from this superlattice in different Al mole fractions and various thicknesses, we can find a suitable semiconductor for a special light-emitting diode (LED) application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=energy%20gap" title="energy gap">energy gap</a>, <a href="https://publications.waset.org/abstracts/search?q=empirical%20tight-binding%20method" title=" empirical tight-binding method"> empirical tight-binding method</a>, <a href="https://publications.waset.org/abstracts/search?q=light-emitting%20diode" title=" light-emitting diode"> light-emitting diode</a>, <a href="https://publications.waset.org/abstracts/search?q=superlattice" title=" superlattice"> superlattice</a>, <a href="https://publications.waset.org/abstracts/search?q=wavelength" title=" wavelength"> wavelength</a> </p> <a href="https://publications.waset.org/abstracts/134686/investigating-the-energy-gap-and-wavelength-of-alga1asgaas-superlattices-in-terms-of-material-thickness-and-al-mole-fraction-using-empirical-tight-binding-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/134686.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">206</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">170</span> Direct Power Control Applied on 5-Level Diode Clamped Inverter Powered by a Renewable Energy Source</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20Elnady">A. Elnady</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents an improved Direct Power Control (DPC) scheme applied to the multilevel inverter that forms a Distributed Generation Unit (DGU). This paper demonstrates the performance of active and reactive power injected by the DGU to the smart grid. The DPC is traditionally operated by the hysteresis controller with the Space Vector Modulation (SVM) which is applied on the 2-level inverters or 3-level inverters. In this paper, the DPC is operated by the PI controller with the Phase-Disposition Pulse Width Modulation (PD-PWM) applied to the 5-level diode clamped inverter. The new combination of the DPC, PI controller, PD-PWM and multilevel inverter proves that its performance is much better than the conventional hysteresis-SVM based DPC. Simulations results have been presented to validate the performance of the suggested control scheme in the grid-connected mode. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=direct%20power%20control" title="direct power control">direct power control</a>, <a href="https://publications.waset.org/abstracts/search?q=PI%20controller" title=" PI controller"> PI controller</a>, <a href="https://publications.waset.org/abstracts/search?q=PD-PWM" title=" PD-PWM"> PD-PWM</a>, <a href="https://publications.waset.org/abstracts/search?q=and%20power%20control" title=" and power control"> and power control</a> </p> <a href="https://publications.waset.org/abstracts/85059/direct-power-control-applied-on-5-level-diode-clamped-inverter-powered-by-a-renewable-energy-source" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/85059.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">240</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode&page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode&page=4">4</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode&page=5">5</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode&page=6">6</a></li> <li class="page-item"><a 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