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2em;">日，中国科学技术大学微电子学院孙海定教授的iGaN实验室开发了一种具有光能量自监测、自校准、自适应能力的三维垂直集成深紫外发光器件阵列（主要通过在透明蓝宝石衬底两侧分别制备microLED阵列和探测器），并将它们成功应用于新型无掩膜深紫外光刻技术中。该研究首次提出将深紫外微型发光二极管（micro-LED）阵列作为光源应用于无掩膜深紫外光刻技术。本技术提出利用每颗micro-LED具有高能量密度、高分辨率、高集成度、低能耗等特点，为实现高精度深紫外光刻提供了一种新的路径和方法。这项研究成果以“Vertically Integrated Self‐Mo<em></em>nitoring AlGaN‐ba<em></em>sed Deep Ultraviolet Micro‐LED Array with Photodetector Via a Transparent Sapphire Substrate Toward Stable and Compact Maskless Photolithography Application”为题，发表于光学领域重要期刊《激光与光子学评论》 （Laser & Photo<em></em>nics Reviews）上。</span></p> <p style="text-align: center;"><span style="text-indent: 2em;"><img src="http://www.casmita.com/file/upload/202409/30/195902812.jpg" width="554" height="297" alt="" /></span></p> <p>光刻技术在集成电路芯片制造过程中扮演着至关重要的角色，是现代半导体、微电子及信息产业的关键核心技术之一。相较于传统光刻机高昂的成本和复杂的系统构造，20世纪90年代起，低成本、高分辨率无掩膜光刻技术便成为了光刻技术研究的前沿热点之一，但已开发的相关技术专利主要集中于欧美、日本和韩国等国家，技术壁垒较高。在此背景下，孙海定教授iGaN团队创新性地提出并实现了一种基于深紫外micro-LED阵列作为光源的无掩膜深紫外光刻技术。该团队通过多年在紫外micro-LED的研究和积累，针对深紫外micro-LED的外延结构[Optics Letters 47: 4187, 2022]、器件尺寸[Optics Letters, 46: 3271, 2021]、侧壁形貌[Optics Letters, 46: 4809, 2021]以及几何形状[IEEE Electron Device Letters 44: 1520, 2024]进行了系统性设计和优化，大幅提升了每颗microLED的发光效率、发光功率、调制带宽以及它们在日盲紫外光探测、成像和传感等方面的多功能性及优越的芯片性能，并成功构建了基于深紫外micro-LED的阵列系统[Journal of Semico<em></em>nductors 43: 062801, 2022; IEEE Electron Device Letters 44: 472, 2023]。更进一步，通过构建集发光与探测于一体的片上光电集成芯片，实现了片上和片间光通信系统应用[Laser & Photo<em></em>nics Reviews, 18: 2300789, 2024; Advanced Optical Materials, 2400499, 2024]。</p> <p>在本次研究中，团队利用深紫外micro-LED具备的超小尺寸、高光能量密度、长寿命及低功耗等优势，进一步开发了集自监测、自校准、自适应功能于一体的深紫外显示光电集成芯片，并应用于无掩膜深紫外光刻系统，实现了国际上利用该新型紫外光源进行无掩膜光刻技术的探索。在追求高效率、小尺寸深紫外micro-LED及其阵列的研究基础上，团队提出了一种集深紫外micro-LED阵列发光与光电探测器与一体的三维垂直集成芯片架构，如图1（a）-（b）所示。在该三维垂直集成架构中，深紫外micro-LED阵列向下发射的紫外光子可以穿透过透明的蓝宝石衬底并被衬底背面的紫外探测器捕获，以实现LED和探测器之间的“光子互连与集成”，从而进行高效的光信号传输。此外，通过搭建外部电路反馈系统，如图1（c），团队展示了深紫外micro-LED阵列光输出能量密度的自发稳定和自动校准。最终，该系统不仅可以监测阵列器件光输出能量密度随时间的波动变化，还可以不断提供反馈信号以确保恒定的光输出功率和光功率密度，这为最终实现紧凑、便携式和低成本无掩膜深紫外光刻技术提供了一种光源基础。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202409/30/195922272.png" width="668" height="377" alt="" /></p> <p>图1.（a）深紫外micro-LED与光电探测器（PD）三维垂直集成芯片架构。（b）深紫外LED外延层与薄膜光电探测器截面的扫描电子显微镜图像。（c）基于双面垂直集成器件搭建的具有自校准、自监测功能的稳定发光系统示意图</p> <p>如图2（a）所示，基于所搭建的电路反馈系统，可以明显的观察到未加入系统反馈的深紫外micro-LED阵列的发光强度随着时间的推移逐渐降低；反观加入具有自监测和自校准反馈功能的器件仍然保持较高的发光强度，可以实现长期稳定运行。同时，基于该反馈系统展示了一个具有564 PPI高像素密度的集成深紫外micro-LED阵列，利用该集成阵列持续稳定的显示字母“U”，并对旋涂有SPR955光刻胶的硅片进行深紫外无掩膜光刻工艺进行曝光，显影后成功地在硅片上显示出清晰的“U”型图案，如图2（b）-2（d）所示。众所周知，当前氮化镓基microLED技术已经在高清晰显示领域扮演着重要的角色，而本研究则进一步展示了它们在高分辨、高精度光刻技术领域的应用潜力。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202409/30/195938942.png" width="668" height="544" alt="" /></p> <p>图2.（a）无反馈信号与加入反馈信号的深紫外micro-LED阵列随时间变化的发光照片。（b）制备的micro-LED阵列的倾斜扫描电子显微图像。（c）显示“U”的深紫外micro-LED阵列光学图像。(d)经过显影后，硅衬底上光刻胶(SPR955)的光学图像。</p> <p>此外，该研究提出了一种集深紫外micro-LED阵列发光与光电探测器与一体的三维垂直集成芯片架构，实现了宽禁带半导体铝镓氮（AlGaN）基发光阵列与光电探测器通过透明蓝宝石衬底进行了垂直光电集成，并展示了一种在单个芯片上实现垂直光子互联的可能性。通过此集成系统，不仅有利于克服传统单片光电集成系统大部分只能通过水平方向或者在衬底（硅、蓝宝石等）的同一晶面上进行光互联和器件集成的局限性，更借助此输出功率恒定的新型发光器件阵列架构，展示了其在无掩模光刻技术方面的应用潜力，并为未来发展高集成度、功能多元的三维光电集成系统提供了一种新的路径。</p> <p>下一步，团队将着力攻关如何进一步缩小单颗micro-LED和探测器的器件尺寸和几何形貌，提升单位面积内器件阵列的密度和集成度，并优化器件的单颗性能和在大晶圆上的性能均一性，为下一步实现更高精度的无掩膜紫外光刻技术打下基础。同时，团队所提出的巧妙利用透明蓝宝石衬底构建发光和探测一体化三维垂直集成芯片架构，也为研制高集成度光子芯片提供了一条新的路径和方法，使其能广泛的适用于包含三维集成光电系统、无掩膜光刻在内的各种光电集成系统等应用场景。</p> <p>此项研究工作得到国家重点研发计划项目、国家自然科学基金项目、中国科大双一流建设经费、中央高校基本科研基金等专项经费的资助，也得到中国科大微电子学院、中国科大微纳研究与制造中心的支持。中国科大孙海定教授为论文通讯作者，博士后余华斌和硕士研究生姚继凯为论文的共同第一作者，武汉大学刘胜院士为本项目的顺利展开提供了方向性和应用指导，安徽省格恩半导体公司提供了重要的技术支撑。</p> <p>Laser & Photo<em></em>nics Reviews 2401220，2024 论文链接：<https://doi.org/10.1002/lpor.202401220></p> <p>Laser & Photo<em></em>nics Reviews, 18: 2300789, 2024; 论文链接：<https://doi.org/10.1002/lpor.202300789></p></div> </div> <div class="award"><div 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