Solid State Phenomena Vol. 344

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</div> </div> <div class="row mobile-collapse-content"> <a href="/SSP.350" class="normal-large-text icon-container"> <div class="element-list"> <div class="element-list-text"> Solid State Phenomena <br /> <span class="paper-volume-number">Vol. 350</span> </div> <div class="element-list-arrow"> <i class="inline-icon arrow-right-black no-focus-icon on-hover-arrow-left-red"></i> </div> </div> </a> <a href="/SSP.349" class="normal-large-text icon-container"> <div class="element-list"> <div class="element-list-text"> Solid State Phenomena <br /> <span class="paper-volume-number">Vol. 349</span> </div> <div class="element-list-arrow"> <i class="inline-icon arrow-right-black no-focus-icon on-hover-arrow-left-red"></i> </div> </div> </a> <a href="/SSP.348" class="normal-large-text icon-container"> <div class="element-list"> <div class="element-list-text"> Solid State Phenomena <br /> <span class="paper-volume-number">Vol. 348</span> </div> <div class="element-list-arrow"> <i class="inline-icon 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class="page-name-block-text">Solid State Phenomena Vol. 344</h1> </div> <div class="clearfix title-details"> <div class="papers-block-info col-lg-12"> <div class="row"> <div class="info-row-name normal-text-gray col-md-2 col-sm-3 col-xs-4"> <div class="row"> <p>DOI:</p> </div> </div> <div class="info-row-content semibold-middle-text col-md-10 col-sm-9 col-xs-8"> <div class="row"> <p><a href="https://doi.org/10.4028/v-9mep5w">https://doi.org/10.4028/v-9mep5w</a></p> </div> </div> </div> </div> <div id="titleMarcXmlLink" style="display: none" class="papers-block-info col-lg-12"> <div class="row"> <div class="info-row-name normal-text-gray col-md-2 col-sm-3 col-xs-4"> <div class="row"> <p>Export:</p> </div> </div> <div class="info-row-content semibold-middle-text col-md-10 col-sm-9 col-xs-8"> <div class="row"> <p><a href="/SSP.344/marc.xml">MARCXML</a></p> </div> </div> </div> </div> <div class="papers-block-info col-lg-12"> <div class="row"> <div class="info-row-name normal-text-gray col-md-2 col-sm-3 col-xs-4"> <div class="row"> <p>ToC:</p> </div> </div> <div class="info-row-content semibold-middle-text col-md-10 col-sm-9 col-xs-8"> <div class="row"> <p><a href="/SSP.344_toc.pdf">Table of Contents</a></p> </div> </div> </div> </div> </div> <div class="volume-tabs"> </div> <div class=""> <div class="volume-papers-page"> <div class="block-search-pagination clearfix"> <div class="block-search-volume"> <input id="paper-search" type="search" placeholder="Search" maxlength="65"> </div> <div class="pagination-container"><ul class="pagination"><li class="active"><span>1</span></li><li><a href="/SSP.344/2">2</a></li><li class="PagedList-skipToNext"><a href="/SSP.344/2" rel="next">></a></li></ul></div> </div> <div class="block-volume-title normal-text-gray"> <p> Paper Title <span>Page</span> </p> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.-1">Preface</a> </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.3">Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Manuel Kollmuss, Xia Dong Shi, Hai Yan Ou, Peter J. Wellmann </div> </div> <div id="abstractTextBlock593937" class="volume-info volume-info-text volume-info-description"> Abstract: We developed a process for the fabrication of SiCOI stacks which are a suitable platform for optical devices. Starting from 3C‑on‑Si samples the silicon substrate was removed by wet chemical etching and the remaining 3C‑SiC layers were bonded to two different low refractive substrates (Al<sub>2</sub>O<sub>3</sub> and polycrystalline SiC with a 3 µm thick SiO<sub>2</sub> layer on top deposited by PECVD). We found that also bonding onto Al<sub>2</sub>O<sub>3</sub> was possible, the stability of the resulting stack wasn´t strong enough for further processing. In contrast mechanical stable SiCOI stacks could be realized using the oxide coated polycrystalline SiC as substrate. Besides the substrate materials three different bonding approaches (hydrophilic, hydrophobic and adhesive bonding using an HSQ resist) as well as multiple process parameters were analyzed with regard to the bonding performance. The best results could be achieved using the adhesive bonding approach with a bonding temperature ≥ 400°C, a process time ≥ 4 h and a bonding pressure of 96 N/cm<sup>2</sup>. </div> <div> <a data-readmore="{ block: '#abstractTextBlock593937', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 3 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.9">Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Kohei Toda, Daichi Dojima, Kiyoshi Kojima, Hiroshi Mihara, Shinichi Mitani, Tadaaki Kaneko </div> </div> <div id="abstractTextBlock593940" class="volume-info volume-info-text volume-info-description"> Abstract: It is known that basal plane dislocations (BPDs) and in-grown stacking faults (IGSFs) in the 4H-SiC epitaxial layer cause severe electrical degradation in SiC devices. The impact that sub-surface damage (SSD) on a production-grade 4H-SiC substrate with CMP-finished surface causes on both the BPD propagation and IGSF formation during epitaxial growth was investigated by Dynamic AGE-ing<sup>🄬</sup> (DA). The substrates etched by DA sublimation etching to adjust the residual amount of SSD maintaining a smooth surface without macro step bunching were grown to observe BPD and IGSF density. The obtained results showed that these defect densities decreased exponentially with increasing etching depth. We demonstrated SSD introduced by mechanical processing led BPDs and IGSFs to extend or introduce to the epitaxial layer. </div> <div> <a data-readmore="{ block: '#abstractTextBlock593940', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 9 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.15">Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Paolo Badalà, Ioannis Deretzis, Salvatore Sanzaro, Fabiana Maria Pennisi, Corrado Bongiorno, Giuseppe Fisicaro, Simone Rascunà, Gabriele Bellocchi, Anna Bassi, Massimo Boscaglia, Daniele Pagano, Patrizia Vasquez, Marius Enachescu, Alessandra Alberti, Antonino La Magna </div> </div> <div id="abstractTextBlock593944" class="volume-info volume-info-text volume-info-description"> Abstract: The formation of ohmic contacts by laser annealing approach is of great importance for SiC power devices, since it allows their fabrication on thin substrates, that is of crucial significance to reduce power dissipation. Ni silicide reaction under UV laser irradiation has been studied in detail with particular focus on single pulse approach, in order to describe the early stage of reaction process. The use of a multi pulse approach, for the formation of Ni silicide-based ohmic contacts by means of excimer laser annealing, has been investigated in this work. The reaction process has been characterized, as a function of number of pulses, by means of X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. Laser process simulations, formulated in the framework of phase field theory, have been performed in order to predict the evolution of material during reaction under annealing. Simulations show that reaction moves to Si-reach phases with the increasing on pulses, with a co-existence of Ni<sub>2</sub>Si and Ni<sub>3</sub>Si<sub>2</sub> phases for the three pulses process. Moreover, simulations show critical differences, in terms of the uniformity of the distribution of the silicide phases along the film, between the single pulse and the multi pulses cases and the increasing of thickness of silicide phases with the pulse sequence. These predictions are in good agreement with the findings of XRD and TEM analyses. The electrical properties of the reacted layer have been evaluated on Schottky Barrier Diodes (SBD) devices, confirming the ohmic behaviour of multi pulse annealed samples. </div> <div> <a data-readmore="{ block: '#abstractTextBlock593944', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 15 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.23"><i>In Situ</i> Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Jonas Ihle, Peter J. Wellmann </div> </div> <div id="abstractTextBlock593952" class="volume-info volume-info-text volume-info-description"> Abstract: The aim of this study is to show the applicability of continuous residual gas analysis for growth monitoring of undoped SiC with physical vapor transport (PVT). For this purpose, two crystals were grown, one without doping and one with continuous nitrogen doping. During the processes continuous residual gas analysis were conducted and evaluated with emphasis on the temporal variations of the nitrogen content. The charge carrier concentration of the final crystals was determined by optical methods (spectrally resolved absorption measurement with UV-VIS and Raman spectroscopy) and the results were compared with the residual gas analysis during growth. A correlation was found between the measured nitrogen-related signal and the charge carrier concentration in the samples. </div> <div> <a data-readmore="{ block: '#abstractTextBlock593952', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 23 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.29">Study of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Hanan Mir, Fabian Meyer, Andreas A. Brand, Katrin Dulitz, Jan Frederik Nekarda </div> </div> <div id="abstractTextBlock593956" class="volume-info volume-info-text volume-info-description"> Abstract: The micromaching of silicon carbide using femtosecond laser pulses is becoming an important field of research. High-repetition-rate sub-pulse trains, so-called pulse bursts, are a particularly promising route towards completely new process regimes. We report on the results of micro-punching n-type 4H-silicon carbide wafers using GHz pulse burst in order to systematically investigate the influence of the temporal energy distribution on laser processing. Pulse-burst experiments are performed at a laser wavelength of λ= 1030 nm using a single GHz burst containing a varying number of pulses and then compared with standard single femtosecond pulse exposures. The pulse energy is swept across the ablation threshold. For each set of parameters, the micromachining efficiency is evaluated in terms of ablation efficiency and burr characteristics. Scanning electron micrographs provide qualitative information about the machining quality. The characteristics of the laser modification are discussed in relation to an increase in the number of pulses in a burst envelope and to an increase in pulse energy. We observe that, compared to a single pulse, a GHz burst comprised of 10 lower-energy pulses leads to an increase in the ablation rate by a factor of ≤ 10. </div> <div> <a data-readmore="{ block: '#abstractTextBlock593956', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 29 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.35">3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Bart J. Van Zeghbroeck, David C. Bobela </div> </div> <div id="abstractTextBlock593962" class="volume-info volume-info-text volume-info-description"> Abstract: 3C-SiC islands were grown on atomically flat (111) 4H-SiC terraces and characterized by micro-Raman and FTIR. The islands initially have a triangular shape as defined by three {100} planes and over time evolve into hexagonal shaped islands. The triangular shape reveals the domain orientation of the island and is easily observed with an optical microscope. Examining 347 3C-SiC islands on 17 4H-SiC terraces we found that islands grown on the same terrace have the same domain orientation with 99.6% probability. The orientation of 3C-SiC islands grown on adjacent terraces was found to be close to random. This work confirms an orientation selection rule with high probability, suggesting that 3C-SiC can be grown without anti-phase domains or DPBs when grown on a single atomically flat 4H-SiC terrace, even when there are multiple nucleation sites. </div> <div> <a data-readmore="{ block: '#abstractTextBlock593962', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 35 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.41">Development of High Quality 8 Inch 4H-SiC Substrates</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Xiao Li Yang, Ya Ni Pan, Chao Gao, Qing Rui Liang, Lu Ping Wang, Jiu Yang Zhang, Yu Han Gao, Xiu Xiu Ning, Hong Yan Zhang </div> </div> <div id="abstractTextBlock593993" class="volume-info volume-info-text volume-info-description"> Abstract: 8 inch 4H-silicon carbide (SiC) development faces challenges first from obtaining high-quality 8 inch SiC seed substrate, then reducing grown-in crystal residual stress and defects in the following crystal growth process. Here we report the diameter expansion process from 6 inch 4H-SiC seed substrate to 8 inch 4H-SiC crystal. Based on simulation and experimental results, it is deduced that an optimized radial temperature gradient (RTG) zone in the range of 0.10-0.12 °C/mm is essential for high-quality and efficient SiC crystal diameter expansion. According to the RTG calculation, diameter expansion process is designed and 8 inch 4H-SiC crystal as well as seed substrate is achieved. With the obtained seed substrate, high-quality 8 inch 4H-SiC crystal is developed and the following polished 4H-SiC substrate quality is characterized. </div> <div> <a data-readmore="{ block: '#abstractTextBlock593993', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 41 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.47">Tailored Polycrystalline Substrate for SmartSiC<sup>TM</sup> Substrates Enabling High Performance Power Devices</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Hugo Biard, Sidoine Odoul, Walter Schwarzenbach, Ionut Radu, Christophe Maleville, Alexandre Potier, Marc Ferrato, Eric Guajioty </div> </div> <div id="abstractTextBlock595033" class="volume-info volume-info-text volume-info-description"> Abstract: Silicon Carbide (SiC) Power Devices have emerged as a breakthrough technology for a wide range of applications in the frame of high-power electronics, notably in the 600 to 3,300V. The last decades have shown a continuous and impressive improvement in both 4H-SiC wafer size and quality. Nevertheless, the availability of such wafers remains a challenge for the SiC power industry. In the last three years, Soitec has successfully adapted the Smart Cut™ technology to Silicon Carbide, resulting in the integration of a thin layer of high quality 4H-SiC on an ultra-low resistivity 3C p-SiC handle wafer. The so-called SmartSiC™ offers a drastic yield improvement for the whole industry thanks to the multiple times re-use of the 4H-SiC donor wafer, as well as an improvement of the device’s electrical performance, especially thanks to the ultra-low resistivity polycrystalline silicon carbide (p-SiC). The latter being specially developed to enhance the new SmartSiC™ substrate capabilities. In this paper, we present the work done by Mersen and Soitec to tailor the p-SiC properties, and thus the SmartSiC™ ones including such material. </div> <div> <a data-readmore="{ block: '#abstractTextBlock595033', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 47 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.344.53">Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> <i class="inline-icon lock-open-red inline-icon-small" title="Open Access"></i> Authors: Hitesh Jayaprakash, Constantin Csato, Tobias Erlbacher, Christian Kranert, Florian Krippendorf, Paul Wimmer, Christian Reimann, Michael Rueb </div> </div> <div id="abstractTextBlock595189" class="volume-info volume-info-text volume-info-description"> Abstract: Commercially available 4H-SiC substrate quality has improved over time, and this has extensively reduced defect concentration in the active epitaxial layer, during epi growth conditions at the interface. The objective of this work is to investigate bulk crystal quality for the purpose of future vertical power device fabrication in exfoliated, non-epitaxial, undoped material layers. Mathematical estimations on the device yield fraction, that is immune to bipolar degradation for the suggested future process were calculated based on XRT measurements to detect BPD and TSD densities on donor substrates. The full wafer BPD density maps of on-axis semi-insulating wafer substrates from two vendors were compared. </div> <div> <a data-readmore="{ block: '#abstractTextBlock595189', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 53 </div> </div> <div class="block-bottom-pagination"> <div class="pager-info"> <p>Showing 1 to 10 of 18 Paper Titles</p> </div> <div class="pagination-container"><ul class="pagination"><li class="active"><span>1</span></li><li><a href="/SSP.344/2">2</a></li><li class="PagedList-skipToNext"><a href="/SSP.344/2" rel="next">></a></li></ul></div> </div> </div> </div> </div> </div> </div> </div> <div class="social-icon-popup"> <a href="https://www.facebook.com/Scientific.Net.Ltd/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon facebook-popup-icon social-icon"></i></a> <a href="https://twitter.com/Scientific_Net/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon twitter-popup-icon social-icon"></i></a> <a href="https://www.linkedin.com/company/scientificnet/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon linkedin-popup-icon social-icon"></i></a> </div> </div> <div class="sc-footer"> <div class="footer-fluid"> <div class="container"> <div class="row"> <div class="footer-menu col-md-12 col-sm-12 col-xs-12"> <ul class="list-inline menu-font"> <li><a href="/ForLibraries">For Libraries</a></li> <li><a href="/ForPublication/Paper">For Publication</a></li> <li><a href="/insights" target="_blank">Insights</a></li> <li><a href="/DocuCenter">Downloads</a></li> <li><a href="/Home/AboutUs">About Us</a></li> <li><a href="/PolicyAndEthics/PublishingPolicies">Policy & Ethics</a></li> <li><a href="/Home/Contacts">Contact Us</a></li> <li><a href="/Home/Imprint">Imprint</a></li> <li><a href="/Home/PrivacyPolicy">Privacy Policy</a></li> <li><a href="/Home/Sitemap">Sitemap</a></li> <li><a href="/Conferences">All Conferences</a></li> <li><a href="/special-issues">All Special Issues</a></li> <li><a href="/news/all">All News</a></li> <li><a href="/open-access-partners">Open Access Partners</a></li> </ul> </div> </div> </div> </div> <div class="line-footer"></div> <div class="footer-fluid"> <div class="container"> <div class="row"> <div class="col-xs-12"> <a href="https://www.facebook.com/Scientific.Net.Ltd/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon facebook-footer-icon social-icon"></i></a> <a href="https://twitter.com/Scientific_Net/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon twitter-footer-icon social-icon"></i></a> <a href="https://www.linkedin.com/company/scientificnet/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon linkedin-footer-icon social-icon"></i></a> </div> </div> </div> </div> <div class="line-footer"></div> <div class="footer-fluid"> <div class="container"> <div class="row"> <div class="col-xs-12 footer-copyright"> <p> © 2025 Trans Tech Publications Ltd. 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Solid State Phenomena Vol. 344 | Scientific.Net