Solid State Phenomena Vol. 346

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The goal of the processes is to obtain nano precise etching and cleaning resulting in ultra clean surfaces with a very high degree of perfection, i.e. with minimal amounts of residues or defects. 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class="page-name-block-text">Solid State Phenomena Vol. 346</h1> </div> <div class="clearfix title-details"> <div class="papers-block-info col-lg-12"> <div class="row"> <div class="info-row-name normal-text-gray col-md-2 col-sm-3 col-xs-4"> <div class="row"> <p>DOI:</p> </div> </div> <div class="info-row-content semibold-middle-text col-md-10 col-sm-9 col-xs-8"> <div class="row"> <p><a href="https://doi.org/10.4028/v-zjBc7H">https://doi.org/10.4028/v-zjBc7H</a></p> </div> </div> </div> </div> <div id="titleMarcXmlLink" style="display: none" class="papers-block-info col-lg-12"> <div class="row"> <div class="info-row-name normal-text-gray col-md-2 col-sm-3 col-xs-4"> <div class="row"> <p>Export:</p> </div> </div> <div class="info-row-content semibold-middle-text col-md-10 col-sm-9 col-xs-8"> <div class="row"> <p><a href="/SSP.346/marc.xml">MARCXML</a></p> </div> </div> </div> </div> <div class="papers-block-info col-lg-12"> <div class="row"> <div class="info-row-name normal-text-gray col-md-2 col-sm-3 col-xs-4"> <div class="row"> <p>ToC:</p> </div> </div> <div class="info-row-content semibold-middle-text col-md-10 col-sm-9 col-xs-8"> <div class="row"> <p><a href="/SSP.346_toc.pdf">Table of Contents</a></p> </div> </div> </div> </div> </div> <div class="volume-tabs"> </div> <div class=""> <div class="volume-papers-page"> <div class="block-search-pagination clearfix"> <div class="block-search-volume"> <input id="paper-search" type="search" placeholder="Search" maxlength="65"> </div> <div class="pagination-container"><ul class="pagination"><li class="active"><span>1</span></li><li><a href="/SSP.346/2">2</a></li><li><a href="/SSP.346/3">3</a></li><li><a href="/SSP.346/4">4</a></li><li><a href="/SSP.346/5">5</a></li><li class="PagedList-ellipses"><a class="PagedList-skipToNext" href="/SSP.346/6" rel="next">…</a></li><li class="PagedList-skipToNext"><a href="/SSP.346/2" rel="next">></a></li><li class="PagedList-skipToLast"><a href="/SSP.346/6">>></a></li></ul></div> </div> <div class="block-volume-title normal-text-gray"> <p> Paper Title <span>Page</span> </p> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.-7">Preface</a> </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.3">Past, Present, and Future of Semiconductor Cleaning Technology</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Takeshi Hattori </div> </div> <div id="abstractTextBlock602250" class="volume-info volume-info-text volume-info-description"> Abstract: This presentation focuses on semiconductor wafer cleaning technology, one of the most critical technologies in semiconductor device manufacturing for obtaining high yield and reliability, and discusses the past, present, and future of the technology. Emphasis is placed on the review of contamination control and cleaning technologies in the early days since the invention of the transistor. To celebrate the 30+1-year anniversary of the UCPSS, a review will be given of both the first conference held in Leuven in 1992 and the second one held in Bruges in 1994. There will be more research challenges and business opportunities in environmentally benign, innovative damage-free wafer cleaning and surface preparation technologies for future applications. </div> <div> <a data-readmore="{ block: '#abstractTextBlock602250', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 3 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.8">Nanosheet-Based Transistor Architectures for Advanced CMOS Scaling: Wet Etch and Gas Phase Etch Challenges in Confined Spaces</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Hans Mertens </div> </div> <div id="abstractTextBlock602346" class="volume-info volume-info-text volume-info-description"> Abstract: Nanosheet-based transistor architectures for advanced CMOS have sophisticated 3D geometries and aggressively scaled dimensions imposing new challenges to wet etch and gas phase etch. In this paper, we describe three nanosheet-based transistor architectures (nanosheet, forksheet, and CFET) as well as associated challenges for wet etch and gas phase etch at various stages of the process flow, including channel release, work function metal patterning, and controlled dielectric etchback for stacked source-drain formation. The compatibility of etch processes with confined spaces and high-aspect-ratio structures becomes increasingly important for novel nanosheet-based transistor architectures. </div> <div> <a data-readmore="{ block: '#abstractTextBlock602346', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 8 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.14">On Gas-Phase Selective Dry Etching in 3D Inflections</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Nitin Ingle </div> </div> <div id="abstractTextBlock602345" class="volume-info volume-info-text volume-info-description"> Abstract: Semiconductor industry periodically goes through major transitions in the architectures and materials. The previous such transition was the Logic transition to FinFET and NAND transition to 3DNAND that revolutionized the two devices and accelerated PPAC (power, performance, area, cost) progress. Over the last decade, introduction of EUV lithography has driven the device miniaturization and furthered the cause of PPAC, but with the same architecture. The accelerating technological needs at lower cost point with better power efficiency are driving the current push in fundamental architectural changes and new materials introductions, especially in Logic and DRAM with a transition to 3D structures. This moves the critical etches from traditional RIE to selective isotropic etching. Furthermore, newer materials and requirements of better interfaces in these 3D structures are driving the need for dry selective treatments with good isotropicity and free of damage. This paper will give an overview of the current state of selective dry etch and progress in treatments. </div> <div> <a data-readmore="{ block: '#abstractTextBlock602345', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 14 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.23">SiGe Selective Etching to Enable Bottom and Middle Dielectric Isolations for Advanced Gate-All-Around FET Architecture</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Hikaru Kawarazaki, Teppei Nakano, Takaaki Ishizu, Takayoshi Tanaka, Wen Liu, Jason Chen, Tomohiko Kawashima, Ai Ping Wu, Farid Sebaai, Ju Geng Lai, Oniki Yusuke, Efrain Altamirano-Sanchez </div> </div> <div id="abstractTextBlock601115" class="volume-info volume-info-text volume-info-description"> Abstract: Formulated chemical ACT<sup>®</sup> SG6xxx series demonstrated SiGe etching selective to SiGe with lower Ge concentration. SiGe etching rate on SiGe/Si multi-stack shown steep trend as a function of Ge concentration, resulting in 338 of selectivity between SiGe30% and SiGe15%. Also, apparent loss on SiN and SiO<sub>2</sub> was not observed. Moreover, SiGe etch rate was not impacted by chemical flow in the beaker. It suggests reaction-controlled based etching, which leads to good within wafer uniformity in etching rate of 300mm wafer spin processing. In conclusion, ACT<sup>®</sup> SG6xxx series is a promising option for the formation of BDI/MDIs in Nanosheet, Forksheet and CFET. </div> <div> <a data-readmore="{ block: '#abstractTextBlock601115', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 23 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.29">Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Francisco Javier Lopez Villanueva, Farid Sebaai, Efrain Altamirano-Sanchez, Andreas Klipp </div> </div> <div id="abstractTextBlock601014" class="volume-info volume-info-text volume-info-description"> Abstract: Using two highly efficient inhibitors, one for silicon and one for SiO<sub>2</sub> and SiN it is possible by varying the hydrogenperoxide concentration to achieve tuneable formulated chemistry concerning selectivity. So, the same formulation can be used for the selective etching of SiGe25 vs. Si like for GAA applications as well as for the selective etching of SiGe40 vs. SiGe20 like for CFET applications. </div> <div> <a data-readmore="{ block: '#abstractTextBlock601014', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 29 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.34">Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Dong Gyu Kim, Guy Vereecke, Pallavi Puttarame Gowda, Kurt Wostyn, Tae Gon Kim, Jin Goo Park, Efrain Altamirano-Sanchez </div> </div> <div id="abstractTextBlock601106" class="volume-info volume-info-text volume-info-description"> Abstract: The use of SiGe substrate as a semiconductor material is increasing because of its unique properties. In order to manufacture high-performance devices, it is necessary to develop SiGe selective etching technology. In this study, SiGe epi and oxide substrates with varying germanium percentages (15, 25, and 40 %) were used for the investigation of the selective etching process. As the etchant, APM (1:4:20) solutions were used, and added HF and HCl to confirm the pH effect. The evaluation was conducted while adjusting the pH level. In the case of the SiGe epi substrate, the etching rate was very low at high pH, but the etching rate rapidly increased at a specific pH. And then, the etch rate gradually decreased. On the other hand, the etch rates of the oxide substrate rapidly increased as the pH decreased. To explain the etch rate behavior due to the difference in Ge content and type of substrates, the surface chemistry was measured, and the speciation of the solution was analyzed. </div> <div> <a data-readmore="{ block: '#abstractTextBlock601106', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 34 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.40">Highly Selective Etching of SiGe to Si for GAAFET</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Seung Hyo Lee, Won Je Lee, Sang Woo Lim </div> </div> <div id="abstractTextBlock601205" class="volume-info volume-info-text volume-info-description"> Abstract: Highly selective etching of SiGe over Si is required for the fabrication of gate-all-around field-effect transistors (GAAFET). A solution consisting of a mixture of H<sub>2</sub>O<sub>2</sub>, CH<sub>3</sub>COOH, and HF is known to etch SiGe with high selectivity over Si. The detailed etching mechanism of SiGe and Si in this solution was investigated in this study. The effect of each chemical species on the etching of SiGe and Si was investigated using various concentrations of H<sub>2</sub>O<sub>2</sub>, CH<sub>3</sub>COOH, and HF. It was found that the etching rate of SiGe was highly relevant to the concentration of peracetic acid (PAA) which was produced by the reaction between H<sub>2</sub>O<sub>2</sub> and CH<sub>3</sub>COOH. In addition, various additives which can further increase the SiGe selectivity and their mechanisms were investigated. </div> <div> <a data-readmore="{ block: '#abstractTextBlock601205', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 40 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.49">Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Pekka Laukkanen </div> </div> <div id="abstractTextBlock602174" class="volume-info volume-info-text volume-info-description"> Abstract: This work aims to summarize previous results reported in literature on atomic level properties of the wet chemically treated hydrogen-terminated silicon surfaces and of the Si oxidation, in comparison to a model system of ultraclean Si surfaces prepared in ultrahigh vacuum (UHV) conditions. A literature review shows that a proper wet chemical treatment of Si(111) provides an atomically smooth, high-quality surface, similar to the model template obtained in UHV conditions after high temperature heating. However, it seems that Si(111) is an exception among semiconductor surfaces concerning the effects of wet chemistry. Although the insulator films grown by the atomic layer deposition (ALD) have replaced the thermal oxide of SiO<sub>2</sub> in many applications, still an intermediate SiO<sub>2</sub> layer is formed and often grown intentionally beneath the ALD film to improve the device performance. However, a detailed atomic structure of the SiO<sub>2</sub>/Si interface is still debatable, which might be due to differences in atomic level smoothness of the used Si(100) starting surfaces. </div> <div> <a data-readmore="{ block: '#abstractTextBlock602174', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 49 </div> </div> <div class="item-block"> <div class="item-link"> <a href="/SSP.346.57">Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces</a> </div> <div class="item-link volume-authors"> <div class="semibold-middle-text"> Authors: Zahra Jahanshah Rad, Mikko Miettinen, Marko Punkkinen, Pekka Laukkanen, Kalevi Kokko, Ville Vähänissi, Hele Savin </div> </div> <div id="abstractTextBlock601069" class="volume-info volume-info-text volume-info-description"> Abstract: Ultrahigh vacuum (UHV) environment has been widely used in surface science, but UHV technology has been often considered too complex and expensive methodology for large-scale industrial use. Because the preparation of atomically smooth and clean Si surfaces has become relevant to some industrial processes, we have re-addressed the question if UHV could be utilized in these surface tasks using industrially feasible parameters. In particular, we have studied how UHV treatments might be combined with the widely used semiconductor cleaning methodology of wet chemistry. </div> <div> <a data-readmore="{ block: '#abstractTextBlock601069', lines: 2, expandText: '...more', collapseText: '...less' }"></a> </div> <div class="page-number semibold-large-text"> 57 </div> </div> <div class="block-bottom-pagination"> <div class="pager-info"> <p>Showing 1 to 10 of 56 Paper Titles</p> </div> <div class="pagination-container"><ul class="pagination"><li class="active"><span>1</span></li><li><a href="/SSP.346/2">2</a></li><li><a href="/SSP.346/3">3</a></li><li><a href="/SSP.346/4">4</a></li><li><a href="/SSP.346/5">5</a></li><li class="PagedList-ellipses"><a class="PagedList-skipToNext" href="/SSP.346/6" rel="next">…</a></li><li class="PagedList-skipToNext"><a href="/SSP.346/2" rel="next">></a></li><li class="PagedList-skipToLast"><a href="/SSP.346/6">>></a></li></ul></div> </div> </div> </div> </div> </div> </div> </div> <div class="social-icon-popup"> <a href="https://www.facebook.com/Scientific.Net.Ltd/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon facebook-popup-icon social-icon"></i></a> <a href="https://twitter.com/Scientific_Net/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon twitter-popup-icon social-icon"></i></a> <a href="https://www.linkedin.com/company/scientificnet/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon linkedin-popup-icon social-icon"></i></a> </div> </div> <div class="sc-footer"> <div class="footer-fluid"> <div class="container"> <div class="row"> <div class="footer-menu col-md-12 col-sm-12 col-xs-12"> <ul class="list-inline menu-font"> <li><a href="/ForLibraries">For Libraries</a></li> <li><a href="/ForPublication/Paper">For Publication</a></li> <li><a href="/insights" target="_blank">Insights</a></li> <li><a href="/DocuCenter">Downloads</a></li> <li><a href="/Home/AboutUs">About Us</a></li> <li><a href="/PolicyAndEthics/PublishingPolicies">Policy & Ethics</a></li> <li><a href="/Home/Contacts">Contact Us</a></li> <li><a href="/Home/Imprint">Imprint</a></li> <li><a href="/Home/PrivacyPolicy">Privacy Policy</a></li> <li><a href="/Home/Sitemap">Sitemap</a></li> <li><a href="/Conferences">All Conferences</a></li> <li><a href="/special-issues">All Special Issues</a></li> <li><a href="/news/all">All News</a></li> <li><a href="/open-access-partners">Open Access Partners</a></li> </ul> </div> </div> </div> </div> <div class="line-footer"></div> <div class="footer-fluid"> <div class="container"> <div class="row"> <div class="col-xs-12"> <a href="https://www.facebook.com/Scientific.Net.Ltd/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon facebook-footer-icon social-icon"></i></a> <a href="https://twitter.com/Scientific_Net/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon twitter-footer-icon social-icon"></i></a> <a href="https://www.linkedin.com/company/scientificnet/" target="_blank" rel="noopener" title="Scientific.Net"><i class="inline-icon linkedin-footer-icon social-icon"></i></a> </div> </div> </div> </div> <div class="line-footer"></div> <div class="footer-fluid"> <div class="container"> <div class="row"> <div class="col-xs-12 footer-copyright"> <p> © 2025 Trans Tech Publications Ltd. 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