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Annealing</title> <meta name="description" content="Search results for: Annealing"> <meta name="keywords" content="Annealing"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none navbar-toggler ml-auto" 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id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="Annealing"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 247</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: Annealing</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">247</span> Portfolio Risk Management Using Quantum Annealing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Thomas%20Doutre">Thomas Doutre</a>, <a href="https://publications.waset.org/abstracts/search?q=Emmanuel%20De%20Meric%20De%20Bellefon"> Emmanuel De Meric De Bellefon</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper describes the application of local-search metaheuristic quantum annealing to portfolio opti- mization. Heuristic technics are particularly handy when Markowitz’ classical Mean-Variance problem is enriched with additional realistic constraints. Once tailored to the problem, computational experiments on real collected data have shown the superiority of quantum annealing over simulated annealing for this constrained optimization problem, taking advantages of quantum effects such as tunnelling. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=optimization" title="optimization">optimization</a>, <a href="https://publications.waset.org/abstracts/search?q=portfolio%20risk%20management" title=" portfolio risk management"> portfolio risk management</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20annealing" title=" quantum annealing"> quantum annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=metaheuristic" title=" metaheuristic"> metaheuristic</a> </p> <a href="https://publications.waset.org/abstracts/40564/portfolio-risk-management-using-quantum-annealing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/40564.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">383</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">246</span> Enhancement in Seebeck Coefficient of MBE Grown Un-Doped ZnO by Thermal Annealing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Asghar">M. Asghar</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20Mahmood"> K. Mahmood</a>, <a href="https://publications.waset.org/abstracts/search?q=F.%20Malik"> F. Malik</a>, <a href="https://publications.waset.org/abstracts/search?q=Lu%20Na"> Lu Na</a>, <a href="https://publications.waset.org/abstracts/search?q=Y-H%20Xie"> Y-H Xie</a>, <a href="https://publications.waset.org/abstracts/search?q=Yasin%20A.%20Raja"> Yasin A. Raja</a>, <a href="https://publications.waset.org/abstracts/search?q=I.%20Ferguson"> I. Ferguson</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we have reported an enhancement in Seebeck coefficient of un-doped zinc oxide (ZnO) grown by molecular beam epitaxy (MBE) on silicon (001) substrate by annealing treatment. The grown ZnO thin films were annealed in oxygen environment at 500°C – 800°C, keeping a step of 100°C for one hour. Room temperature Seebeck measurements showed that Seebeck coefficient and power factor increased from 222 to 510 µV/K and 8.8×10^-6 to 2.6×10^-4 Wm^-1K^-2 as annealing temperature increased from 500°C to 800°C respectively. This is the highest value of Seebeck coefficient ever reported for un-doped MBE grown ZnO according to best of our knowledge. This observation was related with the improvement of crystal structure of grown films with annealing temperature. X-ray diffraction (XRD) results demonstrated that full width half maximum (FWHM) of ZnO (002) plane decreased and crystalline size increased as the annealing temperature increased. Photoluminescence study revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature increased because the density of oxygen vacancy related donor defects decreased with annealing temperature. This argument was further justified by the Hall measurements which showed a decreasing trend of carrier concentration with annealing temperature. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ZnO" title="ZnO">ZnO</a>, <a href="https://publications.waset.org/abstracts/search?q=MBE" title=" MBE"> MBE</a>, <a href="https://publications.waset.org/abstracts/search?q=thermoelectric%20properties" title=" thermoelectric properties"> thermoelectric properties</a>, <a href="https://publications.waset.org/abstracts/search?q=annealing%20temperature" title=" annealing temperature"> annealing temperature</a>, <a href="https://publications.waset.org/abstracts/search?q=crystal%20structure" title=" crystal structure"> crystal structure</a> </p> <a href="https://publications.waset.org/abstracts/6667/enhancement-in-seebeck-coefficient-of-mbe-grown-un-doped-zno-by-thermal-annealing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/6667.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">445</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">245</span> Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chi-Yan%20Chu">Chi-Yan Chu</a>, <a href="https://publications.waset.org/abstracts/search?q=Kai-Chi%20Chuang"> Kai-Chi Chuang</a>, <a href="https://publications.waset.org/abstracts/search?q=Huang-Chung%20Cheng"> Huang-Chung Cheng</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, the RRAM devices with the TiN/Ti/HfO<sub>x</sub>/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfO<sub>x</sub>/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=RRAM" title="RRAM">RRAM</a>, <a href="https://publications.waset.org/abstracts/search?q=furnace%20annealing%20%28FA%29" title=" furnace annealing (FA)"> furnace annealing (FA)</a>, <a href="https://publications.waset.org/abstracts/search?q=forming" title=" forming"> forming</a>, <a href="https://publications.waset.org/abstracts/search?q=set%20and%20reset%20voltages" title=" set and reset voltages"> set and reset voltages</a>, <a href="https://publications.waset.org/abstracts/search?q=XPS" title=" XPS"> XPS</a> </p> <a href="https://publications.waset.org/abstracts/58560/resistive-switching-characteristics-of-resistive-random-access-memory-devices-after-furnace-annealing-processes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/58560.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">371</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">244</span> Thermal Annealing Effects on Nonradiative Recombination Parameters of GaInAsSb/GaSb by Means of Photothermal Defection Technique</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Souha%20Bouagila">Souha Bouagila</a>, <a href="https://publications.waset.org/abstracts/search?q=Soufiene%20Ilahi"> Soufiene Ilahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Noureddine%20Yacoubi"> Noureddine Yacoubi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We have used Photothermal deflection spectroscopy PTD to investigate the impact of thermal annealing on electronics properties of GaInAsSb/GaSb.GaInAsSb used as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). We have remarked that surface recombination velocity (SRV) from 7963 m / s (± 6.3%) to 1450 m / s (± 3.6) for as grown to sample annealed for 60 min. Accordingly, Force Microscopy images analyses agree well with the measure of surface recombination velocity. We have found that Root-Mean-Square Roughness (RMS) decreases as respect of annealing time. In addition, we have that the diffusion length and minority carrier mobility have been enhanced according to annealing time. However, due to annealing effects, the interface recombination velocity (IRV) is increased from 1196 m / s (± 5) to 6000 m/s (5%) for GaInAsSb in respect of annealed times. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonradiative%20lifetime" title="nonradiative lifetime">nonradiative lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=mobility%20of%20minority%20carrier" title=" mobility of minority carrier"> mobility of minority carrier</a>, <a href="https://publications.waset.org/abstracts/search?q=diffusion%20length" title=" diffusion length"> diffusion length</a>, <a href="https://publications.waset.org/abstracts/search?q=Surface%20and%20interface%20recombination%20velocity" title=" Surface and interface recombination velocity"> Surface and interface recombination velocity</a> </p> <a href="https://publications.waset.org/abstracts/165142/thermal-annealing-effects-on-nonradiative-recombination-parameters-of-gainassbgasb-by-means-of-photothermal-defection-technique" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/165142.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">74</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">243</span> Reconstruction of Binary Matrices Satisfying Neighborhood Constraints by Simulated Annealing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Divyesh%20Patel">Divyesh Patel</a>, <a href="https://publications.waset.org/abstracts/search?q=Tanuja%20Srivastava"> Tanuja Srivastava</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper considers the NP-hard problem of reconstructing binary matrices satisfying exactly-1-4-adjacency constraint from its row and column projections. This problem is formulated into a maximization problem. The objective function gives a measure of adjacency constraint for the binary matrices. The maximization problem is solved by the simulated annealing algorithm and experimental results are presented. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=discrete%20tomography" title="discrete tomography">discrete tomography</a>, <a href="https://publications.waset.org/abstracts/search?q=exactly-1-4-adjacency" title=" exactly-1-4-adjacency"> exactly-1-4-adjacency</a>, <a href="https://publications.waset.org/abstracts/search?q=simulated%20annealing" title=" simulated annealing"> simulated annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=binary%20matrices" title=" binary matrices"> binary matrices</a> </p> <a href="https://publications.waset.org/abstracts/8505/reconstruction-of-binary-matrices-satisfying-neighborhood-constraints-by-simulated-annealing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8505.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">406</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">242</span> Characterization of Chemically Deposited CdS Thin Films Annealed in Different Atmospheres</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=J.%20Pantoja%20Enr%C3%ADquez">J. Pantoja Enríquez</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20P.%20Hern%C3%A1ndez"> G. P. Hernández</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20I.%20Duharte"> G. I. Duharte</a>, <a href="https://publications.waset.org/abstracts/search?q=X.%20Mathew"> X. Mathew</a>, <a href="https://publications.waset.org/abstracts/search?q=J.%20Moreira"> J. Moreira</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20J.%20Sebastian"> P. J. Sebastian</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Cadmium sulfide films were deposited onto glass substrates by chemical bath deposition (CBD) from a bath containing cadmium acetate, ammonium acetate, thiourea, and ammonium hydroxide. The CdS thin films were annealed in air, argon, hydrogen and nitrogen for 1 h at various temperatures (300, 350, 400, 450 and 500 °C). The changes in optical and electrical properties of annealed treated CdS thin films were analyzed. The results showed that, the band-gap and resistivity depend on the post-deposition annealing atmosphere and temperatures. Thus, it was found that these properties of the films, were found to be affected by various processes with opposite effects, some beneficial and others unfavorable. The energy gap and resistivity for different annealing atmospheres was seen to oscillate by thermal annealing. Recrystallization, oxidation, surface passivation, sublimation and materials evaporation were found the main factors of the heat-treatment process responsible for this oscillating behavior. Annealing over 400 °C was seen to degrade the optical and electrical properties of the film. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cds" title="cds">cds</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20films" title=" thin films"> thin films</a>, <a href="https://publications.waset.org/abstracts/search?q=annealing" title=" annealing"> annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=optical" title=" optical"> optical</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20properties" title=" electrical properties"> electrical properties</a> </p> <a href="https://publications.waset.org/abstracts/31251/characterization-of-chemically-deposited-cds-thin-films-annealed-in-different-atmospheres" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/31251.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">510</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">241</span> Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Takashi%20Ehara">Takashi Ehara</a>, <a href="https://publications.waset.org/abstracts/search?q=Takayoshi%20Nakanishi"> Takayoshi Nakanishi</a>, <a href="https://publications.waset.org/abstracts/search?q=Kohei%20Sasaki"> Kohei Sasaki</a>, <a href="https://publications.waset.org/abstracts/search?q=Marina%20Abe"> Marina Abe</a>, <a href="https://publications.waset.org/abstracts/search?q=Hiroshi%20Abe"> Hiroshi Abe</a>, <a href="https://publications.waset.org/abstracts/search?q=Kiyoaki%20Abe"> Kiyoaki Abe</a>, <a href="https://publications.waset.org/abstracts/search?q=Ryo%20Iizaka"> Ryo Iizaka</a>, <a href="https://publications.waset.org/abstracts/search?q=Takuya%20Sato"> Takuya Sato</a> </p> <p class="card-text"><strong>Abstract:</strong></p> CuAlO<sub>2</sub> thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO<sub>2</sub> observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO<sub>2</sub> have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO<sub>2</sub> peaks, then, the CuAlO<sub>2</sub> peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO<sub>2</sub> peak. In the present, we ascribe these peaks as metal silicide. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CuAlO2" title="CuAlO2">CuAlO2</a>, <a href="https://publications.waset.org/abstracts/search?q=silicide" title=" silicide"> silicide</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20Films" title=" thin Films"> thin Films</a>, <a href="https://publications.waset.org/abstracts/search?q=transparent%20conducting%20oxide" title=" transparent conducting oxide"> transparent conducting oxide</a> </p> <a href="https://publications.waset.org/abstracts/52540/preparation-of-cualo2-thin-films-on-si-or-sapphire-substrate-by-sol-gel-method-using-metal-acetate-or-nitrate" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/52540.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">396</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">240</span> Cooling-Rate Induced Fiber Birefringence Variation in Regenerated High Birefringent Fiber</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Man-Hong%20Lai">Man-Hong Lai</a>, <a href="https://publications.waset.org/abstracts/search?q=Dinusha%20S.%20Gunawardena"> Dinusha S. Gunawardena</a>, <a href="https://publications.waset.org/abstracts/search?q=Kok-Sing%20Lim"> Kok-Sing Lim</a>, <a href="https://publications.waset.org/abstracts/search?q=Harith%20Ahmad"> Harith Ahmad</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we have reported birefringence manipulation in regenerated high-birefringent fiber Bragg grating (RPMG) by using CO2 laser annealing method. The results indicate that the birefringence of RPMG remains unchanged after CO2 laser annealing followed by a slow cooling process, but reduced after the fast cooling process (~5.6×10-5). After a series of annealing procedures with different cooling rates, the obtained results show that slower the cooling rate, higher the birefringence of RPMG. The volume, thermal expansion coefficient (TEC) and glass transition temperature (Tg) change of stress applying part in RPMG during the cooling process are responsible for the birefringence change. Therefore, these findings are important to the RPMG sensor in high and dynamic temperature environment. The measuring accuracy, range and sensitivity of RPMG sensor are greatly affected by its birefringence value. This work also opens up a new application of CO2 laser for fiber annealing and birefringence modification. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=birefringence" title="birefringence">birefringence</a>, <a href="https://publications.waset.org/abstracts/search?q=CO2%20laser%20annealing" title=" CO2 laser annealing"> CO2 laser annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=regenerated%20gratings" title=" regenerated gratings"> regenerated gratings</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20stress" title=" thermal stress"> thermal stress</a> </p> <a href="https://publications.waset.org/abstracts/33331/cooling-rate-induced-fiber-birefringence-variation-in-regenerated-high-birefringent-fiber" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/33331.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">459</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">239</span> Influence of Annealing on the Mechanical αc-Relaxation of Isotactic-Polypropylene: A Study from the Intermediate Phase Perspective</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Baobao%20Chang">Baobao Chang</a>, <a href="https://publications.waset.org/abstracts/search?q=Konrad%20Schneider"> Konrad Schneider</a>, <a href="https://publications.waset.org/abstracts/search?q=Vogel%20Roland"> Vogel Roland</a>, <a href="https://publications.waset.org/abstracts/search?q=Gert%20Heinrich"> Gert Heinrich</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, the influence of annealing on the mechanical αc-relaxation behavior of isotactic polypropylene (iPP) was investigated. The results suggest that the mechanical αc-relaxation behavior depends strongly on the confinement force on the polymer chains in the intermediate phase and the thickness of the intermediate phase. After quenching at 10°C, abundant crystallites with a wide size distribution are formed. The polymer chains in the intermediate phase are constrained by the crystallites, giving rise to one broad αc-relaxation peak. With an annealing temperature between 60°C~105°C, imperfect lamellae melting releases part of the constraint force, which reduces the conformational ordering of the polymer chains neighboring the amorphous phase. Consequently, two separate αc-relaxation peaks could be observed which are labeled as αc1-relaxation and αc2-relaxation. αc1-relaxation and αc2-relaxation describe the relaxation behavior of polymer chains in the region close to the amorphous phase and the crystalline phase, respectively. Both relaxation peaks shift to a higher temperature as annealing temperature increases. With an annealing temperature higher than 105°C, the new crystalline phase is formed in the intermediate phase, which enhances the constraint force on the polymer chains. αc1-relaxation peak is broadened obviously and its position shifts to a higher temperature as annealing temperature increases. Moreover, αc2-relaxation is undetectable because that the polymer chains in the region between the initial crystalline phase and the newly formed crystalline phase are strongly confined. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=annealing" title="annealing">annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=%CE%B1c-relaxation" title=" αc-relaxation"> αc-relaxation</a>, <a href="https://publications.waset.org/abstracts/search?q=isotactic-polypropylene" title=" isotactic-polypropylene"> isotactic-polypropylene</a>, <a href="https://publications.waset.org/abstracts/search?q=intermediate%20phase" title=" intermediate phase"> intermediate phase</a> </p> <a href="https://publications.waset.org/abstracts/67006/influence-of-annealing-on-the-mechanical-ac-relaxation-of-isotactic-polypropylene-a-study-from-the-intermediate-phase-perspective" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/67006.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">349</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">238</span> Thermal Stability of Hydrogen in ZnO Bulk and Thin Films: A Kinetic Monte Carlo Study</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20A.%20Lahmer">M. A. Lahmer</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20Guergouri"> K. Guergouri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, Kinetic Monte Carlo (KMC) method was applied to study the thermal stability of hydrogen in ZnO bulk and thin films. Our simulation includes different possible events such as interstitial hydrogen (Hi) jumps, substitutional hydrogen (HO) formation and dissociation, oxygen and zinc vacancies jumps, hydrogen-VZn complexes formation and dissociation, HO-Hi complex formation and hydrogen molecule (H2) formation and dissociation. The obtained results show that the hidden hydrogen formed during thermal annealing or at room temperature is constituted of both hydrogen molecule and substitutional hydrogen. The ratio of this constituants depends on the initial defects concentration as well as the annealing temperature. For annealing temperature below 300°C hidden hydrogen was found to be constituted from both substitutional hydrogen and hydrogen molecule, however, for higher temperature it is composed essentially from HO defects only because H2 was found to be unstable. In the other side, our results show that the remaining hydrogen amount in sample during thermal annealing depend greatly on the oxygen vacancies in the material. H2 molecule was found to be stable for thermal annealing up to 200°C, VZnHn complexes are stable up to 350°C and HO was found to be stable up to 450°C. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ZnO" title="ZnO">ZnO</a>, <a href="https://publications.waset.org/abstracts/search?q=hydrogen" title=" hydrogen"> hydrogen</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20annealing" title=" thermal annealing"> thermal annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=kinetic%20Monte%20Carlo" title=" kinetic Monte Carlo"> kinetic Monte Carlo</a> </p> <a href="https://publications.waset.org/abstracts/8488/thermal-stability-of-hydrogen-in-zno-bulk-and-thin-films-a-kinetic-monte-carlo-study" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8488.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">341</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">237</span> Preparation of Porous Metal Membrane by Thermal Annealing for Thin Film Encapsulation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jaibir%20Sharma">Jaibir Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Lee%20JaeWung"> Lee JaeWung</a>, <a href="https://publications.waset.org/abstracts/search?q=Merugu%20Srinivas"> Merugu Srinivas</a>, <a href="https://publications.waset.org/abstracts/search?q=Navab%20Singh"> Navab Singh </a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents thermal annealing dewetting technique for the preparation of porous metal membrane for thin film encapsulation application. Thermal annealing dewetting experimental results reveal that pore size in porous metal membrane depend upon i.e. 1. The substrate on which metal is deposited for formation of porous metal cap membrane, 2. Melting point of metal used for porous metal cap layer membrane formation, 3. Thickness of metal used for cap layer, 4. Temperature used for porous metal membrane formation. Silver (Ag) was used as a metal for preparation of porous metal membrane by annealing the film at different temperature. Pores in porous silver film were analyzed using Scanning Electron Microscope (SEM). In order to check the usefulness of porous metal film for thin film encapsulation application, the porous silver film prepared on amorphous silicon (a-Si) was release using XeF2. Finally, guide line and structures are suggested to use this porous membrane for thin film encapsulation (TFE) application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=dewetting" title="dewetting">dewetting</a>, <a href="https://publications.waset.org/abstracts/search?q=themal%20annealing" title=" themal annealing"> themal annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=metal" title=" metal"> metal</a>, <a href="https://publications.waset.org/abstracts/search?q=melting%20point" title=" melting point"> melting point</a>, <a href="https://publications.waset.org/abstracts/search?q=porous" title=" porous"> porous</a> </p> <a href="https://publications.waset.org/abstracts/31602/preparation-of-porous-metal-membrane-by-thermal-annealing-for-thin-film-encapsulation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/31602.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">658</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">236</span> Controlling RPV Embrittlement through Wet Annealing in Support of Life Extension</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=E.%20A.%20Krasikov">E. A. Krasikov</a> </p> <p class="card-text"><strong>Abstract:</strong></p> As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore, present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. There are two approaches to annealing. The first one is so-called ‘dry’ high temperature (~475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment. The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible. The first RPV «wet» annealing was done using nuclear heat (US Army SM-1A reactor). The second one was done by means of primary pumps heat (Belgian BR-3 reactor). As a rule, there is no recovery effect up to annealing and irradiation temperature difference of 70°C. It is known, however, that along with radiation embrittlement neutron irradiation may mitigate the radiation damage in metals. Therefore, we have tried to test the possibility to use the effect of radiation-induced ductilization in ‘wet’ annealing technology by means of nuclear heat utilization as heat and neutron irradiation sources at once. In support of the above-mentioned conception the 3-year duration reactor experiment on 15Cr3NiMoV type steel with preliminary irradiation at operating PWR at 270°C and following extra irradiation (87 h at 330°C) at IR-8 test reactor was fulfilled. In fact, embrittlement was partly suppressed up to value equivalent to 1,5 fold neutron fluence decrease. The degree of recovery in case of radiation enhanced annealing is equal to 27% whereas furnace annealing results in zero effect under existing conditions. Mechanism of the radiation-induced damage mitigation is proposed. It is hoped that «wet » annealing technology will help provide a better management of the RPV degradation as a factor affecting the lifetime of nuclear power plants which, together with associated management methods, will help facilitate safe and economic long-term operation of PWRs. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=controlling" title="controlling">controlling</a>, <a href="https://publications.waset.org/abstracts/search?q=embrittlement" title=" embrittlement"> embrittlement</a>, <a href="https://publications.waset.org/abstracts/search?q=radiation" title=" radiation"> radiation</a>, <a href="https://publications.waset.org/abstracts/search?q=steel" title=" steel"> steel</a>, <a href="https://publications.waset.org/abstracts/search?q=wet%20annealing" title=" wet annealing"> wet annealing</a> </p> <a href="https://publications.waset.org/abstracts/43963/controlling-rpv-embrittlement-through-wet-annealing-in-support-of-life-extension" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/43963.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">235</span> Annealing of the Contact between Graphene and Metal: Electrical and Raman Study</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20Sakavi%C4%8Dius">A. Sakavičius</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Luk%C5%A1a"> A. Lukša</a>, <a href="https://publications.waset.org/abstracts/search?q=V.%20Nargelien%C4%97"> V. Nargelienė</a>, <a href="https://publications.waset.org/abstracts/search?q=V.%20Bukauskas"> V. Bukauskas</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Astromskas"> G. Astromskas</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20%C5%A0etkus"> A. Šetkus</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We investigate the influence of annealing on the properties of a contact between graphene and metal (Au and Ni), using circular transmission line model (CTLM) contact geometry. Kelvin probe force microscopy (KPFM) and Raman spectroscopy are applied for characterization of the surface and interface properties. Annealing causes a decrease of the metal-graphene contact resistance for both Ni and Au. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Au%2FGraphene%20contacts" title="Au/Graphene contacts">Au/Graphene contacts</a>, <a href="https://publications.waset.org/abstracts/search?q=graphene" title=" graphene"> graphene</a>, <a href="https://publications.waset.org/abstracts/search?q=Kelvin%20force%20probe%20microscopy" title=" Kelvin force probe microscopy"> Kelvin force probe microscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=NiC%2FGraphene%20contacts" title=" NiC/Graphene contacts"> NiC/Graphene contacts</a>, <a href="https://publications.waset.org/abstracts/search?q=Ni%2FGraphene%20contacts" title=" Ni/Graphene contacts"> Ni/Graphene contacts</a>, <a href="https://publications.waset.org/abstracts/search?q=Raman%20spectroscopy" title=" Raman spectroscopy"> Raman spectroscopy</a> </p> <a href="https://publications.waset.org/abstracts/67751/annealing-of-the-contact-between-graphene-and-metal-electrical-and-raman-study" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/67751.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">317</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">234</span> The Role of Deformation Strain and Annealing Temperature on Grain Boundary Engineering and Texture Evolution of Haynes 230</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mohsen%20Sanayei">Mohsen Sanayei</a>, <a href="https://publications.waset.org/abstracts/search?q=Jerzy%20Szpunar"> Jerzy Szpunar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The present study investigates the effects of deformation strain and annealing temperature on the formation of twin boundaries, deformation and recrystallization texture evolution and grain boundary networks and connectivity. The resulting microstructures were characterized using Electron Backscatter Diffraction (EBSD) and X-Ray Diffraction (XRD) both immediately following small amount of deformation and after short time annealing at high temperature to correlate the micro and macro texture evolution of these alloys. Furthermore, this study showed that the process of grain boundary engineering, consisting cycles of deformation and annealing, is found to substantially reduce the mass and size of random boundaries and increase the proportion of low Coincidence Site Lattice (CSL) grain boundaries. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=coincidence%20site%20lattice" title="coincidence site lattice">coincidence site lattice</a>, <a href="https://publications.waset.org/abstracts/search?q=grain%20boundary%20engineering" title=" grain boundary engineering"> grain boundary engineering</a>, <a href="https://publications.waset.org/abstracts/search?q=electron%20backscatter%20diffraction" title=" electron backscatter diffraction"> electron backscatter diffraction</a>, <a href="https://publications.waset.org/abstracts/search?q=texture" title=" texture"> texture</a>, <a href="https://publications.waset.org/abstracts/search?q=x-ray%20diffraction" title=" x-ray diffraction"> x-ray diffraction</a> </p> <a href="https://publications.waset.org/abstracts/70079/the-role-of-deformation-strain-and-annealing-temperature-on-grain-boundary-engineering-and-texture-evolution-of-haynes-230" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/70079.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">311</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">233</span> Synthesis and Characterization of Non-Aqueous Electrodeposited ZnSe Thin Film</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=S.%20R.%20Kumar">S. R. Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=Shashikant%20Rajpal"> Shashikant Rajpal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A nanocrystalline thin film of ZnSe was successfully electrodeposited on copper substrate using a non-aqueous solution and subsequently annealed in air at 400°C. XRD analysis indicates the polycrystalline deposit of (111) plane in both the cases. The sharpness of the peak increases due to annealing of the film and average grain size increases to 20 nm to 27nm. SEM photograph indicate that grains are uniform and densely distributed over the surface. Due to annealing the average grain size increased by 20%. The EDS spectroscopy shows the ratio of Zn & Se is 1.1 in case of annealed film. AFM analysis indicates the average roughness of the film reduces from 181nm to 165nm due to annealing of the film. The bandgap also decreases from 2.71eV to 2.62eV. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrodeposition" title="electrodeposition">electrodeposition</a>, <a href="https://publications.waset.org/abstracts/search?q=non-aqueous%20medium" title=" non-aqueous medium"> non-aqueous medium</a>, <a href="https://publications.waset.org/abstracts/search?q=SEM" title=" SEM"> SEM</a>, <a href="https://publications.waset.org/abstracts/search?q=XRD" title=" XRD"> XRD</a> </p> <a href="https://publications.waset.org/abstracts/22975/synthesis-and-characterization-of-non-aqueous-electrodeposited-znse-thin-film" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22975.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">486</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">232</span> Solving the Wireless Mesh Network Design Problem Using Genetic Algorithm and Simulated Annealing Optimization Methods</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Moheb%20R.%20Girgis">Moheb R. Girgis</a>, <a href="https://publications.waset.org/abstracts/search?q=Tarek%20M.%20Mahmoud"> Tarek M. Mahmoud</a>, <a href="https://publications.waset.org/abstracts/search?q=Bahgat%20A.%20Abdullatif"> Bahgat A. Abdullatif</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahmed%20M.%20Rabie"> Ahmed M. Rabie</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Mesh clients, mesh routers and gateways are components of Wireless Mesh Network (WMN). In WMN, gateways connect to Internet using wireline links and supply Internet access services for users. We usually need multiple gateways, which takes time and costs a lot of money set up, due to the limited wireless channel bit rate. WMN is a highly developed technology that offers to end users a wireless broadband access. It offers a high degree of flexibility contrasted to conventional networks; however, this attribute comes at the expense of a more complex construction. Therefore, a challenge is the planning and optimization of WMNs. In this paper, we concentrate on this challenge using a genetic algorithm and simulated annealing. The genetic algorithm and simulated annealing enable searching for a low-cost WMN configuration with constraints and determine the number of used gateways. Experimental results proved that the performance of the genetic algorithm and simulated annealing in minimizing WMN network costs while satisfying quality of service. The proposed models are presented to significantly outperform the existing solutions. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=wireless%20mesh%20networks" title="wireless mesh networks">wireless mesh networks</a>, <a href="https://publications.waset.org/abstracts/search?q=genetic%20algorithms" title=" genetic algorithms"> genetic algorithms</a>, <a href="https://publications.waset.org/abstracts/search?q=simulated%20annealing" title=" simulated annealing"> simulated annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=topology%20design" title=" topology design"> topology design</a> </p> <a href="https://publications.waset.org/abstracts/11103/solving-the-wireless-mesh-network-design-problem-using-genetic-algorithm-and-simulated-annealing-optimization-methods" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/11103.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">458</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">231</span> Multi-Objective Simulated Annealing Algorithms for Scheduling Just-In-Time Assembly Lines</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ghorbanali%20Mohammadi">Ghorbanali Mohammadi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> New approaches to sequencing mixed-model manufacturing systems are present. These approaches have attracted considerable attention due to their potential to deal with difficult optimization problems. This paper presents Multi-Objective Simulated Annealing Algorithms (MOSAA) approaches to the Just-In-Time (JIT) sequencing problem where workload-smoothing (WL) and the number of set-ups (St) are to be optimized simultaneously. Mixed-model assembly lines are types of production lines where varieties of product models similar in product characteristics are assembled. Moreover, this type of problem is NP-hard. Two annealing methods are proposed to solve the multi-objective problem and find an efficient frontier of all design configurations. The performances of the two methods are tested on several problems from the literature. Experimentation demonstrates the relative desirable performance of the presented methodology. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=scheduling" title="scheduling">scheduling</a>, <a href="https://publications.waset.org/abstracts/search?q=just-in-time" title=" just-in-time"> just-in-time</a>, <a href="https://publications.waset.org/abstracts/search?q=mixed-model%20assembly%20line" title=" mixed-model assembly line"> mixed-model assembly line</a>, <a href="https://publications.waset.org/abstracts/search?q=sequencing" title=" sequencing"> sequencing</a>, <a href="https://publications.waset.org/abstracts/search?q=simulated%20annealing" title=" simulated annealing"> simulated annealing</a> </p> <a href="https://publications.waset.org/abstracts/152223/multi-objective-simulated-annealing-algorithms-for-scheduling-just-in-time-assembly-lines" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/152223.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">128</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">230</span> Hybridized Simulated Annealing with Chemical Reaction Optimization for Solving to Sequence Alignment Problem</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ernesto%20Linan">Ernesto Linan</a>, <a href="https://publications.waset.org/abstracts/search?q=Linda%20Cruz"> Linda Cruz</a>, <a href="https://publications.waset.org/abstracts/search?q=Lucero%20Becerra"> Lucero Becerra</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a new hybridized algorithm based on Chemical Reaction Optimization and Simulated Annealing is proposed to solve the alignment sequence Problem. The Chemical Reaction Optimization is a population-based meta-heuristic algorithm based on the principles of a chemical reaction. Simulated Annealing is applied to solve a large number of combinatorial optimization problems of general-purpose. In this paper, we propose hybridization between Chemical Reaction Optimization algorithm and Simulated Annealing in order to solve the Sequence Alignment Problem. An initial population of molecules is defined at beginning of the proposed algorithm, where each molecule represents a sequence alignment problem. In order to simulate inter-molecule collisions, the process of Chemical Reaction is placed inside the Metropolis Cycle at certain values of temperature. Inside this cycle, change of molecules is done due to collisions; some molecules are accepted by applying Boltzmann probability. The results with the hybrid scheme are better than the results obtained separately. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chemical%20reaction%20optimization" title="chemical reaction optimization">chemical reaction optimization</a>, <a href="https://publications.waset.org/abstracts/search?q=sequence%20alignment%20problem" title=" sequence alignment problem"> sequence alignment problem</a>, <a href="https://publications.waset.org/abstracts/search?q=simulated%20annealing%20algorithm" title=" simulated annealing algorithm"> simulated annealing algorithm</a>, <a href="https://publications.waset.org/abstracts/search?q=metaheuristics" title=" metaheuristics"> metaheuristics</a> </p> <a href="https://publications.waset.org/abstracts/136324/hybridized-simulated-annealing-with-chemical-reaction-optimization-for-solving-to-sequence-alignment-problem" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/136324.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">211</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">229</span> Effect of Rapid Thermal Annealing on the Optical Properties of InAs Quantum Dots Grown on (100) and (311)B GaAs Substrates by Molecular Beam Epitaxy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Amjad%20Almunyif">Amjad Almunyif</a>, <a href="https://publications.waset.org/abstracts/search?q=Amra%20Alhassni"> Amra Alhassni</a>, <a href="https://publications.waset.org/abstracts/search?q=Sultan%20Alhassan"> Sultan Alhassan</a>, <a href="https://publications.waset.org/abstracts/search?q=Maryam%20Al%20Huwayz"> Maryam Al Huwayz</a>, <a href="https://publications.waset.org/abstracts/search?q=Saud%20Alotaibi"> Saud Alotaibi</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdulaziz%20Almalki"> Abdulaziz Almalki</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Henini"> Mohamed Henini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The effect of rapid thermal annealing (RTA) on the optical properties of InAs quantum dots (QDs) grown at an As overpressure of 2x 10⁻⁶ Torr by molecular beam epitaxy (MBE) on (100) and (311)B GaAs substrates was investigated using photoluminescence (PL) technique. PL results showed that for the as-grown samples, the QDs grown on the high index plane (311)B have lower PL intensity and lower full width at half maximum (FWHM) than those grown on the conventional (100) plane. The latter demonstrates that the (311)B QDs have better size uniformity than (100) QDs. Compared with as-grown samples, a blue-shift was observed for all samples with increasing annealing temperature from 600°C to 700°C. For (100) samples, a narrowing of the FWHM was observed with increasing annealing temperature from 600°C to 700°C. However, in (311)B samples, the FWHM showed a different behaviour; it slightly increased when the samples were annealed at 600°C and then decreased when the annealing temperature increased to 700°C. As expected, the PL peak intensity for all samples increased when the laser excitation power increased. The PL peak energy temperature dependence showed a strong redshift when the temperature was increased from 10 K to 120 K. The PL peak energy exhibited an abnormal S-shape behaviour as a function of temperature for all samples. Most samples exhibited a significant enhancement in their activation energies when annealed at 600°C and 700°C, suggesting that annealing annihilated defects created during sample growth. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=RTA" title="RTA">RTA</a>, <a href="https://publications.waset.org/abstracts/search?q=QDs" title=" QDs"> QDs</a>, <a href="https://publications.waset.org/abstracts/search?q=InAs" title=" InAs"> InAs</a>, <a href="https://publications.waset.org/abstracts/search?q=MBE" title=" MBE"> MBE</a> </p> <a href="https://publications.waset.org/abstracts/141819/effect-of-rapid-thermal-annealing-on-the-optical-properties-of-inas-quantum-dots-grown-on-100-and-311b-gaas-substrates-by-molecular-beam-epitaxy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/141819.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">176</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">228</span> Investigation of the Morphology and Optical Properties of CuAlO₂ Thin Film</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=T.%20M.%20Aminu">T. M. Aminu</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Salisu"> A. Salisu</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Abdu"> B. Abdu</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20U.%20Alhassan"> H. U. Alhassan</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20H.%20Dharma"> T. H. Dharma</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Thin films of CuAlO2 were deposited on clean glass substrate using the chemical solution deposition (sol-gel) method of deposition with CuCl and AlCl3 taken as the starting materials. CuCl was dissolved in HCl while AlCl₃ in distilled water, pH value of the mixture was controlled by addition of NaOH. The samples were annealed at different temperatures in order to determine the effect of annealing temperatures on the morphological and optical properties of the deposited CuAlO₂ thin film. The surface morphology reveals an improved crystalline as annealing temperature increases. The results of the UV-vis and FT-IR spectrophotometry indicate that the absorbance for all the samples decreases sharply from a common value of about 89% at about 329 nm to a range of values of 56.2%-35.2% and the absorption / extinction coefficients of the films decrease with increase in annealing temperature from 1.58 x 10⁻⁶ to1.08 x 10⁻⁶ at about 1.14eV in the infrared region to about 1.93 x 10⁻⁶ to 1.29 x 10⁻⁶ at about 3.62eV in the visible region, the transmittance, reflectance and band gaps vary directly with annealing temperature, the deposited films were found to be suitable in optoelectronic applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=copper%20aluminium-oxide%20%28CuAlO2%29" title="copper aluminium-oxide (CuAlO2)">copper aluminium-oxide (CuAlO2)</a>, <a href="https://publications.waset.org/abstracts/search?q=absorbance" title=" absorbance"> absorbance</a>, <a href="https://publications.waset.org/abstracts/search?q=transmittance" title=" transmittance"> transmittance</a>, <a href="https://publications.waset.org/abstracts/search?q=reflectance" title=" reflectance"> reflectance</a>, <a href="https://publications.waset.org/abstracts/search?q=band%20gaps" title=" band gaps"> band gaps</a> </p> <a href="https://publications.waset.org/abstracts/49351/investigation-of-the-morphology-and-optical-properties-of-cualo2-thin-film" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/49351.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">294</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">227</span> Nanoindentation Behaviour and Microstructural Evolution of Annealed Single-Crystal Silicon</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Woei-Shyan%20Lee">Woei-Shyan Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Shuo-Ling%20Chang"> Shuo-Ling Chang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are examined. The silicon specimens are annealed at temperatures of 250, 350 and 450ºC, respectively, for 15 minutes and are then indented to maximum loads of 30, 50 and 70 mN. The phase changes induced in the indented specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). For all annealing temperatures, an elbow feature is observed in the unloading curve following indentation to a maximum load of 30 mN. Under higher loads of 50 mN and 70 mN, respectively, the elbow feature is replaced by a pop-out event. The elbow feature reveals a complete amorphous phase transformation within the indented zone, whereas the pop-out event indicates the formation of Si XII and Si III phases. The experimental results show that the formation of these crystalline silicon phases increases with an increasing annealing temperature and indentation load. The hardness and Young’s modulus both decrease as the annealing temperature and indentation load are increased. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nanoindentation" title="nanoindentation">nanoindentation</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=phase%20transformation" title=" phase transformation"> phase transformation</a>, <a href="https://publications.waset.org/abstracts/search?q=amorphous" title=" amorphous"> amorphous</a>, <a href="https://publications.waset.org/abstracts/search?q=annealing" title=" annealing"> annealing</a> </p> <a href="https://publications.waset.org/abstracts/23123/nanoindentation-behaviour-and-microstructural-evolution-of-annealed-single-crystal-silicon" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/23123.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">373</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">226</span> Solving Weighted Number of Operation Plus Processing Time Due-Date Assignment, Weighted Scheduling and Process Planning Integration Problem Using Genetic and Simulated Annealing Search Methods</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Halil%20Ibrahim%20Demir">Halil Ibrahim Demir</a>, <a href="https://publications.waset.org/abstracts/search?q=Caner%20Erden"> Caner Erden</a>, <a href="https://publications.waset.org/abstracts/search?q=Mumtaz%20Ipek"> Mumtaz Ipek</a>, <a href="https://publications.waset.org/abstracts/search?q=Ozer%20Uygun"> Ozer Uygun</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Traditionally, the three important manufacturing functions, which are process planning, scheduling and due-date assignment, are performed separately and sequentially. For couple of decades, hundreds of studies are done on integrated process planning and scheduling problems and numerous researches are performed on scheduling with due date assignment problem, but unfortunately the integration of these three important functions are not adequately addressed. Here, the integration of these three important functions is studied by using genetic, random-genetic hybrid, simulated annealing, random-simulated annealing hybrid and random search techniques. As well, the importance of the integration of these three functions and the power of meta-heuristics and of hybrid heuristics are studied. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=process%20planning" title="process planning">process planning</a>, <a href="https://publications.waset.org/abstracts/search?q=weighted%20scheduling" title=" weighted scheduling"> weighted scheduling</a>, <a href="https://publications.waset.org/abstracts/search?q=weighted%20due-date%20assignment" title=" weighted due-date assignment"> weighted due-date assignment</a>, <a href="https://publications.waset.org/abstracts/search?q=genetic%20search" title=" genetic search"> genetic search</a>, <a href="https://publications.waset.org/abstracts/search?q=simulated%20annealing" title=" simulated annealing"> simulated annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=hybrid%20meta-heuristics" title=" hybrid meta-heuristics"> hybrid meta-heuristics</a> </p> <a href="https://publications.waset.org/abstracts/57629/solving-weighted-number-of-operation-plus-processing-time-due-date-assignment-weighted-scheduling-and-process-planning-integration-problem-using-genetic-and-simulated-annealing-search-methods" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/57629.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">469</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">225</span> Interface Analysis of Annealed Al/Cu Cladded Sheet</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Joon%20Ho%20Kim">Joon Ho Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae%20Kwon%20Ha"> Tae Kwon Ha</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Effect of aging treatment on microstructural aspects of interfacial layers of the Cu/Al clad sheet produced by Differential Speed Rolling (DSR) process were studied by Electron Back Scattered Diffraction (EBSD). Clad sheet of Al/Cu has been fabricated by using DSR, which caused severe shear deformation between Al and Cu plate to easily bond to each other. Rolling was carried out at 100°C with speed ratio of 2, in which the total thickness reduction was 45%. Interface layers of clad sheet were analyzed by EBSD after subsequent annealing at 400°C for 30 to 120 min. With increasing annealing time, thickness of interface layer and fraction of high angle grain boundary were increased and average grain size was decreased. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=aluminium%2Fcopper%20clad%20sheet" title="aluminium/copper clad sheet">aluminium/copper clad sheet</a>, <a href="https://publications.waset.org/abstracts/search?q=differential%20speed%20rolling" title=" differential speed rolling"> differential speed rolling</a>, <a href="https://publications.waset.org/abstracts/search?q=interface%20layer" title=" interface layer"> interface layer</a>, <a href="https://publications.waset.org/abstracts/search?q=microstructure" title=" microstructure"> microstructure</a>, <a href="https://publications.waset.org/abstracts/search?q=annealing" title=" annealing"> annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=electron%20back%20scattered%20diffraction" title=" electron back scattered diffraction"> electron back scattered diffraction</a> </p> <a href="https://publications.waset.org/abstracts/7126/interface-analysis-of-annealed-alcu-cladded-sheet" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/7126.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">366</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">224</span> Microstructure and Texture Evolution of Cryo Rolled and Annealed Ductile TaNbHfZrTi Refractory High Entropy Alloy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mokali%20Veeresham">Mokali Veeresham</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The microstructure and texture evolution of cryo rolled and annealed ductile TaHfNbZrTi refractory high entropy alloy was investigated. To obtain that, the alloy is severely cryo rolled and subsequently annealed for the recrystallization process. The cryo rolled – 90% shows the presence of very fine grains and microstructural heterogeneity. The cryo rolled samples are annealed at a temperature ranging from 800°C to 1400°C, the partial recrystallization is observed at 800°C annealed condition, and at higher annealing temperatures the complete recrystallization process is noticed. The development of ND fiber texture is observed after the annealing. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=refractory%20high%20entropy%20alloy" title="refractory high entropy alloy">refractory high entropy alloy</a>, <a href="https://publications.waset.org/abstracts/search?q=cryo-rolling" title=" cryo-rolling"> cryo-rolling</a>, <a href="https://publications.waset.org/abstracts/search?q=annealing" title=" annealing"> annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=microstructure" title=" microstructure"> microstructure</a>, <a href="https://publications.waset.org/abstracts/search?q=texture" title=" texture"> texture</a> </p> <a href="https://publications.waset.org/abstracts/139305/microstructure-and-texture-evolution-of-cryo-rolled-and-annealed-ductile-tanbhfzrti-refractory-high-entropy-alloy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/139305.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">176</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">223</span> A Study on the Influence of Annealing Conditions on the Properties of ZnON Thin Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kiran%20Jose">Kiran Jose</a>, <a href="https://publications.waset.org/abstracts/search?q=Anjana%20J.%20G."> Anjana J. G.</a>, <a href="https://publications.waset.org/abstracts/search?q=Venu%20Anand"> Venu Anand</a>, <a href="https://publications.waset.org/abstracts/search?q=Aswathi%20R.%20Nair"> Aswathi R. Nair</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work investigates the change in structural, optical, and electrical properties of Zinc Oxynitride (ZnON) thin film when annealed in different atmospheres. ZnON film is prepared by reactively sputtering the Zinc target using argon, oxygen, and nitrogen. The deposited film is annealed for one hour at 3250C in the Vaccum condition and Nitrogen and oxygen atmospheres. XRD and Raman spectroscopy is used to study the structural properties of samples. The current conduction mechanism is examined by extracting voltage versus current characteristics on a logarithmic scale, and the optical response is quantified by analyzing persistent photoconductivity (PPC) behavior. This study proposes the optimum annealing atmosphere for ZnON thin film for a better transistor and photosensor application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zinc%20oxynitride" title="Zinc oxynitride">Zinc oxynitride</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20film" title=" thin film"> thin film</a>, <a href="https://publications.waset.org/abstracts/search?q=annealing" title=" annealing"> annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=DC%20sputtering" title=" DC sputtering"> DC sputtering</a> </p> <a href="https://publications.waset.org/abstracts/157564/a-study-on-the-influence-of-annealing-conditions-on-the-properties-of-znon-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/157564.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">93</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">222</span> Impact Factor of Annealing on Electrical Properties of Zinc Selenide (ZnSe) Thin Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Esubalew%20Yehualaw%20Melaku">Esubalew Yehualaw Melaku</a>, <a href="https://publications.waset.org/abstracts/search?q=Tizazu%20Abeza"> Tizazu Abeza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> ZnSe thin films in an aqueous solution of zinc acetate and hydrazine hydrate (HH) using the non-toxic complexing agent EDTA along with the films were annealed at 200, 300, and 400oC. This research aimed to investigate the effect of annealing on the structural, optical, and electrical properties of the films. X-ray diffraction (XRD) analysis was used to study the structure and crystallite size of the ZnSe thin film. The ZnSe thin films are annealed in an oven at various temperatures which are characterized by structural and optical properties. An increase in annealing temperature distorted the nanocrystillinity and made the ZnSe thin films amorphous. The variation of resistivity indicates the semiconducting nature of the thin film. The electrical resistivity of the films decreases with increasing annealing temperature. In this study, the Band gap of ZnSe decreases from 2.8eV to 2.65eV with the increase in temperature and decreases for as-deposited to 2.5eV. As a result of this research, ZnSe is used for certain applications; it has been widely utilized in various optoelectronic devices such as thin film solar cells, green-blue light emitting diodes, lasers, photo-luminescent, and electro-luminescent devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chemical%20bath%20deposition" title="chemical bath deposition">chemical bath deposition</a>, <a href="https://publications.waset.org/abstracts/search?q=ZnSe%20thin%20film" title=" ZnSe thin film"> ZnSe thin film</a>, <a href="https://publications.waset.org/abstracts/search?q=band%20gap" title=" band gap"> band gap</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title=" solar cells"> solar cells</a> </p> <a href="https://publications.waset.org/abstracts/166183/impact-factor-of-annealing-on-electrical-properties-of-zinc-selenide-znse-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/166183.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">131</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">221</span> Model Order Reduction Using Hybrid Genetic Algorithm and Simulated Annealing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Khaled%20Salah">Khaled Salah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Model order reduction has been one of the most challenging topics in the past years. In this paper, a hybrid solution of genetic algorithm (GA) and simulated annealing algorithm (SA) are used to approximate high-order transfer functions (TFs) to lower-order TFs. In this approach, hybrid algorithm is applied to model order reduction putting in consideration improving accuracy and preserving the properties of the original model which are two important issues for improving the performance of simulation and computation and maintaining the behavior of the original complex models being reduced. Compared to conventional mathematical methods that have been used to obtain a reduced order model of high order complex models, our proposed method provides better results in terms of reducing run-time. Thus, the proposed technique could be used in electronic design automation (EDA) tools. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=genetic%20algorithm" title="genetic algorithm">genetic algorithm</a>, <a href="https://publications.waset.org/abstracts/search?q=simulated%20annealing" title=" simulated annealing"> simulated annealing</a>, <a href="https://publications.waset.org/abstracts/search?q=model%20reduction" title=" model reduction"> model reduction</a>, <a href="https://publications.waset.org/abstracts/search?q=transfer%20function" title=" transfer function"> transfer function</a> </p> <a href="https://publications.waset.org/abstracts/97897/model-order-reduction-using-hybrid-genetic-algorithm-and-simulated-annealing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/97897.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">143</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">220</span> Application of Simulated Annealing to Threshold Optimization in Distributed OS-CFAR System </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=L.%20Abdou">L. Abdou</a>, <a href="https://publications.waset.org/abstracts/search?q=O.%20Taibaoui"> O. Taibaoui</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Moumen"> A. Moumen</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Talib%20Ahmed">A. Talib Ahmed</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper proposes an application of the simulated annealing to optimize the detection threshold in an ordered statistics constant false alarm rate (OS-CFAR) system. Using conventional optimization methods, such as the conjugate gradient, can lead to a local optimum and lose the global optimum. Also for a system with a number of sensors that is greater than or equal to three, it is difficult or impossible to find this optimum; Hence, the need to use other methods, such as meta-heuristics. From a variety of meta-heuristic techniques, we can find the simulated annealing (SA) method, inspired from a process used in metallurgy. This technique is based on the selection of an initial solution and the generation of a near solution randomly, in order to improve the criterion to optimize. In this work, two parameters will be subject to such optimisation and which are the statistical order (k) and the scaling factor (T). Two fusion rules; “AND” and “OR” were considered in the case where the signals are independent from sensor to sensor. The results showed that the application of the proposed method to the problem of optimisation in a distributed system is efficiency to resolve such problems. The advantage of this method is that it allows to browse the entire solutions space and to avoid theoretically the stagnation of the optimization process in an area of local minimum. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=distributed%20system" title="distributed system">distributed system</a>, <a href="https://publications.waset.org/abstracts/search?q=OS-CFAR%20system" title=" OS-CFAR system"> OS-CFAR system</a>, <a href="https://publications.waset.org/abstracts/search?q=independent%20sensors" title=" independent sensors"> independent sensors</a>, <a href="https://publications.waset.org/abstracts/search?q=simulating%20annealing" title=" simulating annealing"> simulating annealing</a> </p> <a href="https://publications.waset.org/abstracts/22281/application-of-simulated-annealing-to-threshold-optimization-in-distributed-os-cfar-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22281.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">497</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">219</span> Effect of Annealing Temperature on the Photoelectric Work Function of Silver-Zinc Oxide Contact Materials</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bouchou%20A%C3%AFssa">Bouchou Aïssa</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Akbi"> Mohamed Akbi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Contact materials used for electrical breakers are often made with silver alloys. Mechanical and thermo dynamical properties as well as electron emission of such complicated alloys present a lack of reliable and accurate experimental data. This paper deals mainly with electron work function (EWF) measurements about silver-metal oxide (Ag-MeO) electrical contacts (Ag-ZnO (92/8), before and after surface heat treatments at 296 K  813 K, under UHV conditions (residual gas pressure of 1.4 x 10-7 mbar). The electron work function (EWF) of silver zinc oxide materials was measured photoelectrically, using both Fowler’s method of isothermal curves and linearized Fowler plots. In this paper, we present the development of a method for measuring photoelectric work function of contact materials. Also reported in this manuscript are the results of experimental work whose purpose has been the buildup of a reliable photoelectric system and associated monochromatic ultra-violet radiations source, and the photoelectric measurement of the electron work functions (EWF) of contact materials. In order to study the influence of annealing temperature on the EWF, a vacuum furnace was used for heating the metallic samples up to 800 K. The EWF of the silver – zinc oxide materials were investigated to study the influence of annealing temperature on the EWF. In the present study, the photoelectric measurements about Ag-ZnO(92/8) contacts have shown a linear decrease of the EWF with increasing temperature, i.e. the temperature coefficient is constant and negative: for the first annealing # 1, in the temperature range [299 K  823 K]. On the contrary, a linear increase was observed with increasing temperature (i.e. , being constant and positive), for the next annealing # 2, in the temperature range [296 K  813 K]. The EWFs obtained for silver-zinc oxide Ag-ZnO(92/8) show an obvious dependence on the annealing temperature which is strongly associated with the evolution of the arrangement on ZnO nano particles on the Ag-ZnO contact surface as well as surface charge distribution. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Photoemission" title="Photoemission">Photoemission</a>, <a href="https://publications.waset.org/abstracts/search?q=Electron%20work%20function" title=" Electron work function"> Electron work function</a>, <a href="https://publications.waset.org/abstracts/search?q=Fowler%20methods" title=" Fowler methods"> Fowler methods</a>, <a href="https://publications.waset.org/abstracts/search?q=Ag-ZnO%20contact%20materials" title=" Ag-ZnO contact materials"> Ag-ZnO contact materials</a>, <a href="https://publications.waset.org/abstracts/search?q=Vacuum%20heat%20treatment" title=" Vacuum heat treatment"> Vacuum heat treatment</a> </p> <a href="https://publications.waset.org/abstracts/25862/effect-of-annealing-temperature-on-the-photoelectric-work-function-of-silver-zinc-oxide-contact-materials" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/25862.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">416</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">218</span> Recrystallization Microstructure Studies of Cold-Rolled Ta0.5Nb0.5Hf0.5ZrTi1.5 Non-Equiatomic Refractory High Entropy Alloy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Veeresham%20Mokali">Veeresham Mokali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recrystallization microstructure and grain growth studies of Ta₀.₅Nb₀.₅Hf₀.₅ZrTi₁.₅ refractory high entropy alloy have been explored in the present work. The as-cast Ta₀.₅Nb₀.₅Hf₀.₅ZrTi₁.₅ alloy was cold-rolled to 90% in several passes at room temperature and further subjected to annealing treatment for recrystallization at 800°C, 1000°C, 1250°C, and 1400°C temperatures for one hour. However, the characterization of heavily cold-rolled and annealed condition specimens was done using scanning electron microscopy (SEM-EBSD). The cold-rolled specimens showed the development of an inhomogeneous microstructure. Upon annealing, recrystallized microstructures were achieved; in addition to that, the coarsening of microstructure with raising annealing temperature noticed in the range of 800°C – 1400°C annealed temperatures. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=refractory%20high%20entropy%20alloys" title="refractory high entropy alloys">refractory high entropy alloys</a>, <a href="https://publications.waset.org/abstracts/search?q=cold-rolling" title=" cold-rolling"> cold-rolling</a>, <a href="https://publications.waset.org/abstracts/search?q=recrystallization" title=" recrystallization"> recrystallization</a>, <a href="https://publications.waset.org/abstracts/search?q=microstructure" title=" microstructure"> microstructure</a> </p> <a href="https://publications.waset.org/abstracts/138947/recrystallization-microstructure-studies-of-cold-rolled-ta05nb05hf05zrti15-non-equiatomic-refractory-high-entropy-alloy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/138947.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">202</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=Annealing&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=Annealing&page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=Annealing&page=4">4</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=Annealing&page=5">5</a></li> <li class="page-item"><a class="page-link" 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