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diode</title> <meta name="description" content="Search results for: Zener diode"> <meta name="keywords" content="Zener diode"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none navbar-toggler ml-auto" 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id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="Zener diode"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 199</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: Zener diode</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">199</span> Analysis of Silicon Controlled Rectifier-Based Electrostatic Discharge Protection Circuits with Electrical Characteristics for the 5V Power Clamp</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper analyzed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuits with the turn-on time characteristics. The structures are the LVTSCR (Low Voltage Triggered SCR), the ZTSCR (Zener Triggered SCR) and the PTSCR (P-Substrate Triggered SCR). The three structures are for the 5V power clamp. In general, the structures with the low trigger voltage structure can have the fast turn-on characteristics than other structures. All the ESD protection circuits have the low trigger voltage by using the N+ bridge region of LVTSCR, by using the zener diode structure of ZTSCR, by increasing the trigger current of PTSCR. The simulation for the comparison with the turn-on time was conducted by the Synopsys TCAD simulator. As the simulation results, the LVTSCR has the turn-on time of 2.8 ns, ZTSCR of 2.1 ns and the PTSCR of 2.4 ns. The HBM simulation results, however, show that the PTSCR is the more robust structure of 430K in HBM 8kV standard than 450K of LVTSCR and 495K of ZTSCR. Therefore the PTSCR is the most effective ESD protection circuit for the 5V power clamp. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=turn-on%20time" title=" turn-on time"> turn-on time</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a> </p> <a href="https://publications.waset.org/abstracts/65650/analysis-of-silicon-controlled-rectifier-based-electrostatic-discharge-protection-circuits-with-electrical-characteristics-for-the-5v-power-clamp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/65650.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">348</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">198</span> The Effect of the Thermal Temperature and Injected Current on Laser Diode 808 nm Output Power</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hassan%20H.%20Abuelhassan">Hassan H. Abuelhassan</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Ali%20Badawi"> M. Ali Badawi</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdelrahman%20A.%20Elbadawi"> Abdelrahman A. Elbadawi</a>, <a href="https://publications.waset.org/abstracts/search?q=Adam%20A.%20Elbashir"> Adam A. Elbashir</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, the effect of the injected current and temperature into the output power of the laser diode module operating at 808nm were applied, studied and discussed. Low power diode laser was employed as a source. The experimental results were demonstrated and then the output power of laser diode module operating at 808nm was clearly changed by the thermal temperature and injected current. The output power increases by the increasing the injected current and temperature. We also showed that the increasing of the injected current results rising in heat, which also, results into decreasing of the laser diode output power during the highest temperature as well. The best ranges of characteristics made by diode module operating at 808nm were carefully handled and determined. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=laser%20diode" title="laser diode">laser diode</a>, <a href="https://publications.waset.org/abstracts/search?q=light%20amplification" title=" light amplification"> light amplification</a>, <a href="https://publications.waset.org/abstracts/search?q=injected%20current" title=" injected current"> injected current</a>, <a href="https://publications.waset.org/abstracts/search?q=output%20power" title=" output power"> output power</a> </p> <a href="https://publications.waset.org/abstracts/49324/the-effect-of-the-thermal-temperature-and-injected-current-on-laser-diode-808-nm-output-power" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/49324.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">387</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">197</span> Frequency Reconfigurable Multiband Patch Antenna Using PIN-Diode for ITS Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Gaurav%20Upadhyay">Gaurav Upadhyay</a>, <a href="https://publications.waset.org/abstracts/search?q=Nand%20Kishore"> Nand Kishore</a>, <a href="https://publications.waset.org/abstracts/search?q=Prashant%20Ranjan"> Prashant Ranjan</a>, <a href="https://publications.waset.org/abstracts/search?q=V.%20S.%20Tripathi"> V. S. Tripathi</a>, <a href="https://publications.waset.org/abstracts/search?q=Shivesh%20Tripathi"> Shivesh Tripathi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A frequency reconfigurable multiband antenna for intelligent transportation system (ITS) applications is proposed in this paper. A PIN-diode is used for reconfigurability. Centre frequencies are 1.38, 1.98, 2.89, 3.86, and 4.34 GHz in “ON” state of Diode and 1.56, 2.16, 2.88, 3.91 and 4.45 GHz in “OFF” state. Achieved maximum bandwidth is 18%. The maximum gain of the proposed antenna is 2.7 dBi in “ON” state and 3.95 dBi in “OFF” state of the diode. The antenna is simulated, fabricated, and tested in the lab. Measured and simulated results are in good confirmation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ITS" title="ITS">ITS</a>, <a href="https://publications.waset.org/abstracts/search?q=multiband%20antenna" title=" multiband antenna"> multiband antenna</a>, <a href="https://publications.waset.org/abstracts/search?q=PIN-diode" title=" PIN-diode"> PIN-diode</a>, <a href="https://publications.waset.org/abstracts/search?q=reconfigurable" title=" reconfigurable"> reconfigurable</a> </p> <a href="https://publications.waset.org/abstracts/84977/frequency-reconfigurable-multiband-patch-antenna-using-pin-diode-for-its-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/84977.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">347</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">196</span> A Small Signal Model for Resonant Tunneling Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rania%20M.%20Abdallah">Rania M. Abdallah</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahmed%20A.%20S.%20Dessouki"> Ahmed A. S. Dessouki</a>, <a href="https://publications.waset.org/abstracts/search?q=Moustafa%20H.%20Aly"> Moustafa H. Aly</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper has presented a new simple small signal model for a resonant tunnelling diode device. The resonant tunnelling diode equivalent circuit elements were calculated and the results led to good agreement between the calculated equivalent circuit elements and the measurement results. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=resonant%20tunnelling%20diode" title="resonant tunnelling diode">resonant tunnelling diode</a>, <a href="https://publications.waset.org/abstracts/search?q=small%20signal%20model" title=" small signal model"> small signal model</a>, <a href="https://publications.waset.org/abstracts/search?q=negative%20differential%20conductance" title=" negative differential conductance"> negative differential conductance</a>, <a href="https://publications.waset.org/abstracts/search?q=electronic%20engineering" title=" electronic engineering"> electronic engineering</a> </p> <a href="https://publications.waset.org/abstracts/5891/a-small-signal-model-for-resonant-tunneling-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/5891.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">443</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">195</span> Dependence of Photocurrent on UV Wavelength in ZnO/Pt Bottom-Contact Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Byoungho%20Lee">Byoungho Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Changmin%20Kim"> Changmin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Youngmin%20Lee"> Youngmin Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Sejoon%20Lee"> Sejoon Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Deuk%20Young%20Kim"> Deuk Young Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong dependence on the UV wavelength for its photo-response characteristics. When longer-wavelength-UV (e.g., UV-A) was illuminated on the device, the photo-current was increased by a factor of 200, compared to that under illumination of shorter-wavelength-UV (e.g., UV-C). The behavior is attributed to the wavelength-dependent UV penetration depth for ZnO. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ZnO" title="ZnO">ZnO</a>, <a href="https://publications.waset.org/abstracts/search?q=UV" title=" UV"> UV</a>, <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diode" title=" Schottky diode"> Schottky diode</a>, <a href="https://publications.waset.org/abstracts/search?q=photocurrent" title=" photocurrent"> photocurrent</a> </p> <a href="https://publications.waset.org/abstracts/45500/dependence-of-photocurrent-on-uv-wavelength-in-znopt-bottom-contact-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45500.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">256</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">194</span> Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/56482/analysis-of-stacked-scr-based-esd-protection-circuit-with-low-trigger-voltage-and-latch-up-immunity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56482.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">524</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">193</span> Study on Concentration and Temperature Measurement with 760 nm Diode Laser in Combustion System Using Tunable Diode Laser Absorption Spectroscopy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Miyeon%20Yoo">Miyeon Yoo</a>, <a href="https://publications.waset.org/abstracts/search?q=Sewon%20Kim"> Sewon Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Changyeop%20Lee"> Changyeop Lee</a> </p> <p class="card-text"><strong>Abstract:</strong></p> It is important to measure the internal temperature or temperature distribution precisely in combustion system to increase energy efficiency and reduce the pollutants. Especially in case of large combustion systems such as power plant boiler and reheating furnace of steel making process, it is very difficult to measure those physical properties in detail. Tunable diode laser absorption spectroscopy measurement and analysis can be attractive method to overcome the difficulty. In this paper, TDLAS methods are used to measure the oxygen concentration and temperature distribution in various experimental conditions. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=tunable%20diode%20laser%20absorption%20Spectroscopy" title="tunable diode laser absorption Spectroscopy">tunable diode laser absorption Spectroscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=temperature%20distribution" title=" temperature distribution"> temperature distribution</a>, <a href="https://publications.waset.org/abstracts/search?q=gas%20concentration" title=" gas concentration"> gas concentration</a> </p> <a href="https://publications.waset.org/abstracts/3424/study-on-concentration-and-temperature-measurement-with-760-nm-diode-laser-in-combustion-system-using-tunable-diode-laser-absorption-spectroscopy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/3424.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">386</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">192</span> Fluctuations of Transfer Factor of the Mixer Based on Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Alexey%20V.%20Klyuev">Alexey V. Klyuev</a>, <a href="https://publications.waset.org/abstracts/search?q=Arkady%20V.%20Yakimov"> Arkady V. Yakimov</a>, <a href="https://publications.waset.org/abstracts/search?q=Mikhail%20I.%20Ryzhkin"> Mikhail I. Ryzhkin</a>, <a href="https://publications.waset.org/abstracts/search?q=Andrey%20V.%20Klyuev"> Andrey V. Klyuev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Fluctuations of Schottky diode parameters in a structure of the mixer are investigated. These fluctuations are manifested in two ways. At the first, they lead to fluctuations in the transfer factor that is lead to the amplitude fluctuations in the signal of intermediate frequency. On the basis of the measurement data of 1/f noise of the diode at forward current, the estimation of a spectrum of relative fluctuations in transfer factor of the mixer is executed. Current dependence of the spectrum of relative fluctuations in transfer factor of the mixer and dependence of the spectrum of relative fluctuations in transfer factor of the mixer on the amplitude of the heterodyne signal are investigated. At the second, fluctuations in parameters of the diode lead to the occurrence of 1/f noise in the output signal of the mixer. This noise limits the sensitivity of the mixer to the value of received signal. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=current-voltage%20characteristic" title="current-voltage characteristic">current-voltage characteristic</a>, <a href="https://publications.waset.org/abstracts/search?q=fluctuations" title=" fluctuations"> fluctuations</a>, <a href="https://publications.waset.org/abstracts/search?q=mixer" title=" mixer"> mixer</a>, <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diode" title=" Schottky diode"> Schottky diode</a>, <a href="https://publications.waset.org/abstracts/search?q=1%2Ff%20noise" title=" 1/f noise"> 1/f noise</a> </p> <a href="https://publications.waset.org/abstracts/37525/fluctuations-of-transfer-factor-of-the-mixer-based-on-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/37525.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">586</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">191</span> Modeling of the Energy Storage Device: LTC3588</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mojtaba%20Ghodsi">Mojtaba Ghodsi</a>, <a href="https://publications.waset.org/abstracts/search?q=Morteza%20Mohammadzaheri"> Morteza Mohammadzaheri</a>, <a href="https://publications.waset.org/abstracts/search?q=Payam%20Soltani"> Payam Soltani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This study provides a detailed analysis of the LTC3588 as a low-power energy storage model, focusing on its internal circuitry and energy harvesting capabilities. The study highlights the relationship between the input and output capacitors and the behavior of the output voltage, particularly its rise time. It was found that increasing the input capacitance (Cᵢₙ) from 1 µF to 220 µF reduces oscillations in the output voltage (Vₒᵤₜ) and slows the rate of increase in the input voltage, demonstrating the impact of input capacitance on voltage dynamics. Furthermore, the study revealed that smaller output capacitors (Cₒᵤₜ) result in fewer voltage jumps required to reach the target output voltage of 3.2 V, suggesting that a smaller Cₒᵤₜ improves voltage regulation speed and stability. The study concludes that both input and output capacitors play a critical role in the LTC3588's performance. Optimizing these capacitors is crucial for efficient energy storage and harvesting in applications requiring minimal power consumption. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=LTC3588" title="LTC3588">LTC3588</a>, <a href="https://publications.waset.org/abstracts/search?q=modeling" title=" modeling"> modeling</a>, <a href="https://publications.waset.org/abstracts/search?q=Zener%20diode" title=" Zener diode"> Zener diode</a>, <a href="https://publications.waset.org/abstracts/search?q=LED" title=" LED"> LED</a> </p> <a href="https://publications.waset.org/abstracts/192372/modeling-of-the-energy-storage-device-ltc3588" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/192372.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">5</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">190</span> Microwave Single Photon Source Using Landau-Zener Transitions</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Siddhi%20Khaire">Siddhi Khaire</a>, <a href="https://publications.waset.org/abstracts/search?q=Samarth%20Hawaldar"> Samarth Hawaldar</a>, <a href="https://publications.waset.org/abstracts/search?q=Baladitya%20Suri"> Baladitya Suri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> As efforts towards quantum communication advance, the need for single photon sources becomes imminent. Due to the extremely low energy of a single microwave photon, efforts to build single photon sources and detectors in the microwave range are relatively recent. We plan to use a Cooper Pair Box (CPB) that has a ‘sweet-spot’ where the two energy levels have minimal separation. Moreover, these qubits have fairly large anharmonicity making them close to ideal two-level systems. If the external gate voltage of these qubits is varied rapidly while passing through the sweet-spot, due to Landau-Zener effect, the qubit can be excited almost deterministically. The rapid change of the gate control voltage through the sweet spot induces a non-adiabatic population transfer from the ground to the excited state. The qubit eventually decays into the emission line emitting a single photon. The advantage of this setup is that the qubit can be excited without any coherent microwave excitation, thereby effectively increasing the usable source efficiency due to the absence of control pulse microwave photons. Since the probability of a Landau-Zener transition can be made almost close to unity by the appropriate design of parameters, this source behaves as an on-demand source of single microwave photons. The large anharmonicity of the CPB also ensures that only one excited state is involved in the transition and multiple photon output is highly improbable. Such a system has so far not been implemented and would find many applications in the areas of quantum optics, quantum computation as well as quantum communication. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20computing" title="quantum computing">quantum computing</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20communication" title=" quantum communication"> quantum communication</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20optics" title=" quantum optics"> quantum optics</a>, <a href="https://publications.waset.org/abstracts/search?q=superconducting%20qubits" title=" superconducting qubits"> superconducting qubits</a>, <a href="https://publications.waset.org/abstracts/search?q=flux%20qubit" title=" flux qubit"> flux qubit</a>, <a href="https://publications.waset.org/abstracts/search?q=charge%20qubit" title=" charge qubit"> charge qubit</a>, <a href="https://publications.waset.org/abstracts/search?q=microwave%20single%20photon%20source" title=" microwave single photon source"> microwave single photon source</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20information%20processing" title=" quantum information processing"> quantum information processing</a> </p> <a href="https://publications.waset.org/abstracts/160844/microwave-single-photon-source-using-landau-zener-transitions" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/160844.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">98</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">189</span> Powerful Laser Diode Matrixes for Active Vision Systems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Dzmitry%20M.%20Kabanau">Dzmitry M. Kabanau</a>, <a href="https://publications.waset.org/abstracts/search?q=Vladimir%20V.%20Kabanov"> Vladimir V. Kabanov</a>, <a href="https://publications.waset.org/abstracts/search?q=Yahor%20V.%20Lebiadok"> Yahor V. Lebiadok</a>, <a href="https://publications.waset.org/abstracts/search?q=Denis%20V.%20Shabrov"> Denis V. Shabrov</a>, <a href="https://publications.waset.org/abstracts/search?q=Pavel%20V.%20Shpak"> Pavel V. Shpak</a>, <a href="https://publications.waset.org/abstracts/search?q=Gevork%20T.%20Mikaelyan"> Gevork T. Mikaelyan</a>, <a href="https://publications.waset.org/abstracts/search?q=Alexandr%20P.%20Bunichev"> Alexandr P. Bunichev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=active%20vision%20systems" title="active vision systems">active vision systems</a>, <a href="https://publications.waset.org/abstracts/search?q=laser%20diode%20matrixes" title=" laser diode matrixes"> laser diode matrixes</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20properties" title=" thermal properties"> thermal properties</a>, <a href="https://publications.waset.org/abstracts/search?q=radiation%20divergence" title=" radiation divergence"> radiation divergence</a> </p> <a href="https://publications.waset.org/abstracts/19451/powerful-laser-diode-matrixes-for-active-vision-systems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19451.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">612</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">188</span> Characterization of InP Semiconductor Quantum Dot Laser Diode after Am-Be Neutron Irradiation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdulmalek%20Marwan%20Rajkhan">Abdulmalek Marwan Rajkhan</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20S.%20Al%20Ghamdi"> M. S. Al Ghamdi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohammed%20Damoum"> Mohammed Damoum</a>, <a href="https://publications.waset.org/abstracts/search?q=Essam%20Banoqitah"> Essam Banoqitah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper is about the Am-Be neutron source irradiation of the InP Quantum Dot Laser diode. A QD LD was irradiated for 24 hours and 48 hours. The laser underwent IV characterization experiments before and after the first and second irradiations. A computer simulation using GAMOS helped in analyzing the given results from IV curves. The results showed an improvement in the QD LD series resistance, current density, and overall ideality factor at all measured temperatures. This is explained by the activation of the QD LD Indium composition to Strontium, ionization of the compound QD LD materials, and the energy deposited to the QD LD. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20dot%20laser%20diode%20irradiation" title="quantum dot laser diode irradiation">quantum dot laser diode irradiation</a>, <a href="https://publications.waset.org/abstracts/search?q=effect%20of%20radiation%20on%20QD%20LD" title=" effect of radiation on QD LD"> effect of radiation on QD LD</a>, <a href="https://publications.waset.org/abstracts/search?q=Am-Be%20irradiation%20effect%20on%20SC%20QD%20LD" title=" Am-Be irradiation effect on SC QD LD"> Am-Be irradiation effect on SC QD LD</a> </p> <a href="https://publications.waset.org/abstracts/178642/characterization-of-inp-semiconductor-quantum-dot-laser-diode-after-am-be-neutron-irradiation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/178642.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">62</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">187</span> Dynamics of Adiabatic Rapid Passage in an Open Rabi Dimer Model</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Justin%20Zhengjie%20Tan">Justin Zhengjie Tan</a>, <a href="https://publications.waset.org/abstracts/search?q=Yang%20Zhao"> Yang Zhao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Adiabatic Rapid Passage, a popular method of achieving population inversion, is studied in a Rabi dimer model in the presence of noise which acts as a dissipative environment. The integration of the multi-Davydov D2 Ansatz into the time-dependent variational framework enables us to model the intricate quantum system accurately. By influencing the system with a driving field strength resonant with the energy spacing, the probability of adiabatic rapid passage, which is modelled after the Landau Zener model, can be derived along with several other observables, such as the photon population. The effects of a dissipative environment can be reproduced by coupling the system to a common phonon mode. By manipulating the strength and frequency of the driving field, along with the coupling strength of the phonon mode to the qubits, we are able to control the qubits and photon dynamics and subsequently increase the probability of Adiabatic Rapid Passage happening. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20electrodynamics" title="quantum electrodynamics">quantum electrodynamics</a>, <a href="https://publications.waset.org/abstracts/search?q=adiabatic%20rapid%20passage" title=" adiabatic rapid passage"> adiabatic rapid passage</a>, <a href="https://publications.waset.org/abstracts/search?q=Landau-Zener%20transitions" title=" Landau-Zener transitions"> Landau-Zener transitions</a>, <a href="https://publications.waset.org/abstracts/search?q=dissipative%20environment" title=" dissipative environment"> dissipative environment</a> </p> <a href="https://publications.waset.org/abstracts/167520/dynamics-of-adiabatic-rapid-passage-in-an-open-rabi-dimer-model" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/167520.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">87</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">186</span> Determination of Material Constants and Zener-Hollomon Parameter of AA2017 Aluminium Alloy under Hot Compression Test</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=C.%20H.%20Shashikanth">C. H. Shashikanth</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20J.%20Davidson"> M. J. Davidson</a>, <a href="https://publications.waset.org/abstracts/search?q=V.%20Suresh%20Babu"> V. Suresh Babu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The formability of metals depends on a number of variables such as strain, strain rate, and temperature. Though most of the metals are formable at room temperature, few are not. To evaluate the workability of such metals at elevated temperatures, thermomechanical experiments should be carried out to find out the forming temperatures and strain rates. Though a number of constitutive relations are available to correlate the material parameters and the corresponding formability at elevated temperatures, the constitutive rule proposed by Arrhenius has been used in this work. Thus, in the present work, the material constants such as A (constant), α (stress multiplier), β (constant), and n (stress exponent) of AA 2017 has been found by conducting a series of hot compression tests at different temperatures such as 400°C, 450°C, 500°C, and 550°C and at different strain rates such as 0.16, 0.18, and 0.2. True stress (σt), true strains (εt) deformation activation energy (Q), and the Zener-Hollomon parameter (Z value) were also calculated. The results indicate that the value of ln (Z) decreases as the temperature increases and it increases as the strain rate increases. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=hot%20compression%20test" title="hot compression test">hot compression test</a>, <a href="https://publications.waset.org/abstracts/search?q=aluminium%20alloy" title=" aluminium alloy"> aluminium alloy</a>, <a href="https://publications.waset.org/abstracts/search?q=flow%20stress" title=" flow stress"> flow stress</a>, <a href="https://publications.waset.org/abstracts/search?q=activation%20energy" title=" activation energy"> activation energy</a> </p> <a href="https://publications.waset.org/abstracts/22101/determination-of-material-constants-and-zener-hollomon-parameter-of-aa2017-aluminium-alloy-under-hot-compression-test" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22101.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">621</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">185</span> Electrical Characterization of Hg/n-bulk GaN Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Nabil">B. Nabil</a>, <a href="https://publications.waset.org/abstracts/search?q=O.%20Zahir"> O. Zahir</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20Abdelaziz"> R. Abdelaziz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We present the results of electrical characterizations current-voltage and capacity-voltage implementation of a method of making a Schottky diode on bulk gallium nitride doped n. We made temporary Schottky contact of Mercury (Hg) and an ohmic contact of silver (Ag), the electrical characterizations current-voltage (I-V) and capacitance-voltage (C-V) allows us to determine the difference parameters of our structure (Hg /n-GaN) as the barrier height (ΦB), the ideality factor (n), the series resistor (Rs), the voltage distribution (Vd), the doping of the substrate (Nd) and density of interface states (Nss). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bulk%20Gallium%20nitride" title="Bulk Gallium nitride">Bulk Gallium nitride</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20characterization" title=" electrical characterization"> electrical characterization</a>, <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diode" title=" Schottky diode"> Schottky diode</a>, <a href="https://publications.waset.org/abstracts/search?q=series%20resistance" title=" series resistance"> series resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=substrate%20doping" title=" substrate doping"> substrate doping</a> </p> <a href="https://publications.waset.org/abstracts/1498/electrical-characterization-of-hgn-bulk-gan-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/1498.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">485</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">184</span> Effect of Varying Zener-Hollomon Parameter (Temperature and Flow Stress) and Stress Relaxation on Creep Response of Hot Deformed AA3104 Can Body Stock</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Oyindamola%20Kayode">Oyindamola Kayode</a>, <a href="https://publications.waset.org/abstracts/search?q=Sarah%20George"> Sarah George</a>, <a href="https://publications.waset.org/abstracts/search?q=Roberto%20Borrageiro"> Roberto Borrageiro</a>, <a href="https://publications.waset.org/abstracts/search?q=Mike%20Shirran"> Mike Shirran</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A phenomenon identified by our industrial partner has experienced sag on AA3104 can body stock (CBS) transfer bar during transportation of the slab from the breakdown mill to the finishing mill. Excessive sag results in bottom scuffing of the slab onto the roller table, resulting in surface defects on the final product. It has been found that increasing the strain rate on the breakdown mill final pass results in a slab resistant to sag. The creep response for materials hot deformed at different Zener–Holloman parameter values needs to be evaluated experimentally to gain better understanding of the operating mechanism. This study investigates this identified phenomenon through laboratory simulation of the breakdown mill conditions for various strain rates by utilizing the Gleeble at UCT Centre for Materials Engineering. The experiment will determine the creep response for a range of conditions as well as quantifying the associated material microstructure (sub-grain size, grain structure etc). The experimental matrices were determined based on experimental conditions approximate to industrial hot breakdown rolling and carried out on the Gleeble 3800 at the Centre for Materials Engineering, University of Cape Town. Plane strain compression samples were used for this series of tests at an applied load that allow for better contact and exaggerated creep displacement. A tantalum barrier layer was used for increased conductivity and decreased risk of anvil welding. One set of tests with no in-situ hold time was performed, where the samples were quenched after deformation. The samples were retained for microstructure analysis of the micrographs from the light microscopy (LM), quantitative data and images from scanning electron microscopy (SEM) and energy dispersive X-ray (EDX), sub-grain size and grain structure from electron back scattered diffraction (EBSD). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=aluminium%20alloy" title="aluminium alloy">aluminium alloy</a>, <a href="https://publications.waset.org/abstracts/search?q=can-body%20stock" title=" can-body stock"> can-body stock</a>, <a href="https://publications.waset.org/abstracts/search?q=hot%20rolling" title=" hot rolling"> hot rolling</a>, <a href="https://publications.waset.org/abstracts/search?q=creep%20response" title=" creep response"> creep response</a>, <a href="https://publications.waset.org/abstracts/search?q=Zener-Hollomon%20parameter" title=" Zener-Hollomon parameter"> Zener-Hollomon parameter</a> </p> <a href="https://publications.waset.org/abstracts/152728/effect-of-varying-zener-hollomon-parameter-temperature-and-flow-stress-and-stress-relaxation-on-creep-response-of-hot-deformed-aa3104-can-body-stock" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/152728.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">86</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">183</span> Analytical Terahertz Characterization of In0.53Ga0.47As Transistors and Homogenous Diodes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelmadjid%20Mammeri">Abdelmadjid Mammeri</a>, <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Mahi"> Fatima Zohra Mahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Luca%20Varani"> Luca Varani</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Marinchoi"> H. Marinchoi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We propose an analytical model for the admittance and the noise calculations of the InGaAs transistor and diode. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent of the small-signal admittance response is determined by the total currents and the potentials matrix relation between the gate and the drain terminals. The noise is evaluated by using the real part of the transistor/diode admittance under a small-signal perturbation. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; can give significant information about the noise frequency dependence in the InGaAs transistor and diode. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20transistors" title="InGaAs transistors">InGaAs transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode" title=" InGaAs diode"> InGaAs diode</a>, <a href="https://publications.waset.org/abstracts/search?q=admittance" title=" admittance"> admittance</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20peaks" title=" resonant peaks"> resonant peaks</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20waves" title=" plasma waves"> plasma waves</a>, <a href="https://publications.waset.org/abstracts/search?q=analytical%20model" title=" analytical model"> analytical model</a> </p> <a href="https://publications.waset.org/abstracts/45170/analytical-terahertz-characterization-of-in053ga047as-transistors-and-homogenous-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45170.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">316</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">182</span> The Nonlinear Optical Properties Analysis of AlPc-Cl Organic Compound</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Benhaliliba">M. Benhaliliba</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Ben%20Ahmed"> A. Ben Ahmed</a>, <a href="https://publications.waset.org/abstracts/search?q=C.E.%20Benouis"> C.E. Benouis</a>, <a href="https://publications.waset.org/abstracts/search?q=A.Ayeshamariam"> A.Ayeshamariam</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The properties of nonlinear optical NLOs are examined, and the results confirm the 2.19 eV HOMO-LUMO mismatch. In the Al-Pc cluster, certain functional bond lengths and bond angles have been observed. The Quantum chemical method (DFT and TD-DFT) and Vibrational spectra properties of AlPc are studied. X-ray pattern reveals the crystalline structure along with the (242) orientation of the AlPc organic thin layer. UV-Vis shows the frequency selective behavior of the device. The absorbance of such layer exhibits a high value within the UV range and two consecutive peaks within visible range. Spin coating is used to make an organic diode based on the Aluminium-phthalocynanine (AlPc-Cl) molecule. Under dark and light conditions, electrical characterization of Ag/AlPc/Si/Au is obtained. The diode's high rectifying capability (about 1x104) is subsequently discovered. While the height barrier is constant and saturation current is greatly reliant on light, the ideality factor of such a diode increases to 6.9 which confirms the non-ideality of such a device. The Cheung-Cheung technique is employed to further the investigation and gain additional data such as series resistance and barrier height. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=AlPc-Cl%20organic%20material" title="AlPc-Cl organic material">AlPc-Cl organic material</a>, <a href="https://publications.waset.org/abstracts/search?q=nonlinear%20optic" title=" nonlinear optic"> nonlinear optic</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20filter" title=" optical filter"> optical filter</a>, <a href="https://publications.waset.org/abstracts/search?q=diode" title=" diode"> diode</a> </p> <a href="https://publications.waset.org/abstracts/148773/the-nonlinear-optical-properties-analysis-of-alpc-cl-organic-compound" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/148773.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">138</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">181</span> Reconfigurable Multiband Meandered Line Antenna</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=D.%20Rama%20Krishna">D. Rama Krishna</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.%20Pandu%20Rangaiah"> Y. Pandu Rangaiah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents the design of multiband reconfigurable antenna using PIN diodes for four iterations and all the four iterations have been validated by measuring return loss and pattern measurements of developed prototype antenna. The simulated and experimental data have demonstrated the concepts of a multiband reconfigurable antenna by switching OFF and ON of PIN diodes for multiple band frequencies. The technique has taken the advantage of a different number of radiating lengths with the use of PIN diode switches, each configuration resonating at multiband frequencies. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=frequency%20reconfigurable" title="frequency reconfigurable">frequency reconfigurable</a>, <a href="https://publications.waset.org/abstracts/search?q=meandered%20line%20multiband%20antenna" title=" meandered line multiband antenna"> meandered line multiband antenna</a>, <a href="https://publications.waset.org/abstracts/search?q=PIN%20diode" title=" PIN diode"> PIN diode</a>, <a href="https://publications.waset.org/abstracts/search?q=multiband%20frequencies" title=" multiband frequencies"> multiband frequencies</a> </p> <a href="https://publications.waset.org/abstracts/10408/reconfigurable-multiband-meandered-line-antenna" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/10408.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">387</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">180</span> Characterization of the in 0.53 Ga 0.47 as n+nn+ Photodetectors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Mahi">Fatima Zohra Mahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Luca%20Varani"> Luca Varani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We present an analytical model for the calculation of the sensitivity, the spectral current noise and the detectivity for an optically illuminated In0.53Ga0.47As n+nn+ diode. The photocurrent due to the excess carrier is obtained by solving the continuity equation. Moreover, the current noise level is evaluated at room temperature and under a constant voltage applied between the diode terminals. The analytical calculation of the current noise in the n+nn+ structure is developed. The responsivity and the detectivity are discussed as functions of the doping concentrations and the emitter layer thickness in one-dimensional homogeneous n+nn+ structure. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=detectivity" title="detectivity">detectivity</a>, <a href="https://publications.waset.org/abstracts/search?q=photodetectors" title=" photodetectors"> photodetectors</a>, <a href="https://publications.waset.org/abstracts/search?q=continuity%20equation" title=" continuity equation"> continuity equation</a>, <a href="https://publications.waset.org/abstracts/search?q=current%20noise" title=" current noise"> current noise</a> </p> <a href="https://publications.waset.org/abstracts/13905/characterization-of-the-in-053-ga-047-as-nnn-photodetectors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/13905.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">644</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">179</span> Study of the Energy Levels in the Structure of the Laser Diode GaInP</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelali%20Laid">Abdelali Laid</a>, <a href="https://publications.waset.org/abstracts/search?q=Abid%20Hamza"> Abid Hamza</a>, <a href="https://publications.waset.org/abstracts/search?q=Zeroukhi%20Houari"> Zeroukhi Houari</a>, <a href="https://publications.waset.org/abstracts/search?q=Sayah%20Naimi"> Sayah Naimi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work relates to the study of the energy levels and the optimization of the Parameter intrinsic (a number of wells and their widths, width of barrier of potential, index of refraction etc.) and extrinsic (temperature, pressure) in the Structure laser diode containing the structure GaInP. The methods of calculation used; - method of the empirical pseudo potential to determine the electronic structures of bands, - graphic method for optimization. The found results are in concord with those of the experiment and the theory. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=semi-conductor" title="semi-conductor">semi-conductor</a>, <a href="https://publications.waset.org/abstracts/search?q=GaInP%2FAlGaInP" title=" GaInP/AlGaInP"> GaInP/AlGaInP</a>, <a href="https://publications.waset.org/abstracts/search?q=pseudopotential" title=" pseudopotential"> pseudopotential</a>, <a href="https://publications.waset.org/abstracts/search?q=energy" title=" energy"> energy</a>, <a href="https://publications.waset.org/abstracts/search?q=alliages" title=" alliages"> alliages</a> </p> <a href="https://publications.waset.org/abstracts/36433/study-of-the-energy-levels-in-the-structure-of-the-laser-diode-gainp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/36433.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">492</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">178</span> SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20Lakrim">A. Lakrim</a>, <a href="https://publications.waset.org/abstracts/search?q=D.%20Tahri"> D. Tahri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=SiC%20MPS%20diode" title="SiC MPS diode">SiC MPS diode</a>, <a href="https://publications.waset.org/abstracts/search?q=electro-thermal" title=" electro-thermal"> electro-thermal</a>, <a href="https://publications.waset.org/abstracts/search?q=SPICE%20model" title=" SPICE model"> SPICE model</a>, <a href="https://publications.waset.org/abstracts/search?q=behavioral%20macro-model" title=" behavioral macro-model"> behavioral macro-model</a> </p> <a href="https://publications.waset.org/abstracts/11540/sic-merged-pin-and-schottky-mps-power-diodes-electrothermal-modeling-in-spice" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/11540.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">407</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">177</span> Chaotic Electronic System with Lambda Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=George%20Mahalu">George Mahalu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The Chua diode has been configured over time in various ways, using electronic structures like operational amplifiers (AOs) or devices with gas or semiconductors. When discussing the use of semiconductor devices, tunnel diodes (Esaki diodes) are most often considered, and more recently, transistorized configurations such as lambda diodes. The paperwork proposed here uses in the modeling a lambda diode type configuration consisting of two junction field effect transistors (JFET). The original scheme is created in the MULTISIM electronic simulation environment and is analyzed in order to identify the conditions for the appearance of evolutionary unpredictability specific to nonlinear dynamic systems with chaos-induced behavior. The chaotic deterministic oscillator is one autonomous type, a fact that places it in the class of Chua’s type oscillators, the only significant and most important difference being the presence of a nonlinear device like the one mentioned structure above. The chaotic behavior is identified both by means of strange attractor-type trajectories and visible during the simulation and by highlighting the hypersensitivity of the system to small variations of one of the input parameters. The results obtained through simulation and the conclusions drawn are useful in the further research of ways to implement such constructive electronic solutions in theoretical and practical applications related to modern small signal amplification structures, to systems for encoding and decoding messages through various modern ways of communication, as well as new structures that can be imagined both in modern neural networks and in those for the physical implementation of some requirements imposed by current research with the aim of obtaining practically usable solutions in quantum computing and quantum computers. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chua" title="chua">chua</a>, <a href="https://publications.waset.org/abstracts/search?q=diode" title=" diode"> diode</a>, <a href="https://publications.waset.org/abstracts/search?q=memristor" title=" memristor"> memristor</a>, <a href="https://publications.waset.org/abstracts/search?q=chaos" title=" chaos"> chaos</a> </p> <a href="https://publications.waset.org/abstracts/164571/chaotic-electronic-system-with-lambda-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/164571.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">88</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">176</span> An Improved Visible Range Absorption Spectroscopy on Soil Macronutrient </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Suhaila%20Isaak">Suhaila Isaak</a>, <a href="https://publications.waset.org/abstracts/search?q=Yusmeeraz%20Yusof"> Yusmeeraz Yusof</a>, <a href="https://publications.waset.org/abstracts/search?q=Khairunnisa%20Mohd%20Yusof"> Khairunnisa Mohd Yusof</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahmad%20Safuan%20Abdul%20Rashid"> Ahmad Safuan Abdul Rashid</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Soil fertility is commonly evaluated by soil macronutrients such as nitrate, potassium, and phosphorus contents. Optical spectroscopy is an emerging technology which is rapid and simple has been widely used in agriculture to measure soil fertility. For visible and near infrared absorption spectroscopy, the absorbed light level in is useful for soil macro-nutrient measurement. This is because the absorption of light in a soil sample influences sensitivity of the measurement. This paper reports the performance of visible and near infrared absorption spectroscopy in the 400–1400 nm wavelength range using light-emitting diode as the excitation light source to predict the soil macronutrient content of nitrate, potassium, and phosphorus. The experimental results show an improved linear regression analysis of various soil specimens based on the Beer–Lambert law to determine sensitivity of soil spectroscopy by evaluating the absorption of characteristic peaks emitted from a light-emitting diode and detected by high sensitivity optical spectrometer. This would denote in developing a simple and low-cost soil spectroscopy with light-emitting diode for future implementation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=macronutrients%20absorption" title="macronutrients absorption">macronutrients absorption</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20spectroscopy" title=" optical spectroscopy"> optical spectroscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=soil" title=" soil"> soil</a>, <a href="https://publications.waset.org/abstracts/search?q=absorption" title=" absorption"> absorption</a> </p> <a href="https://publications.waset.org/abstracts/78092/an-improved-visible-range-absorption-spectroscopy-on-soil-macronutrient" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/78092.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">293</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">175</span> Chaotic Electronic System with Lambda Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=George%20Mahalu">George Mahalu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The Chua diode has been configured over time in various ways, using electronic structures like as operational amplifiers (OAs) or devices with gas or semiconductors. When discussing the use of semiconductor devices, tunnel diodes (Esaki diodes) are most often considered, and more recently, transistorized configurations such as lambda diodes. The paper-work proposed here uses in the modeling a lambda diode type configuration consisting of two Junction Field Effect Transistors (JFET). The original scheme is created in the MULTISIM electronic simulation environment and is analyzed in order to identify the conditions for the appearance of evolutionary unpredictability specific to nonlinear dynamic systems with chaos-induced behavior. The chaotic deterministic oscillator is one autonomous type, a fact that places it in the class of Chua’s type oscillators, the only significant and most important difference being the presence of a nonlinear device like the one mentioned structure above. The chaotic behavior is identified both by means of strange attractor-type trajectories and visible during the simulation and by highlighting the hypersensitivity of the system to small variations of one of the input parameters. The results obtained through simulation and the conclusions drawn are useful in the further research of ways to implement such constructive electronic solutions in theoretical and practical applications related to modern small signal amplification structures, to systems for encoding and decoding messages through various modern ways of communication, as well as new structures that can be imagined both in modern neural networks and in those for the physical implementation of some requirements imposed by current research with the aim of obtaining practically usable solutions in quantum computing and quantum computers. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chaos" title="chaos">chaos</a>, <a href="https://publications.waset.org/abstracts/search?q=lambda%20diode" title=" lambda diode"> lambda diode</a>, <a href="https://publications.waset.org/abstracts/search?q=strange%20attractor" title=" strange attractor"> strange attractor</a>, <a href="https://publications.waset.org/abstracts/search?q=nonlinear%20system" title=" nonlinear system"> nonlinear system</a> </p> <a href="https://publications.waset.org/abstracts/162251/chaotic-electronic-system-with-lambda-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/162251.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">86</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">174</span> Simulation of I–V Characteristics of Lateral PIN Diode on Polysilicon Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelaziz%20Rabhi">Abdelaziz Rabhi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Amrani"> Mohamed Amrani</a>, <a href="https://publications.waset.org/abstracts/search?q=Abderrazek%20Ziane"> Abderrazek Ziane</a>, <a href="https://publications.waset.org/abstracts/search?q=Nabil%20Belkadi"> Nabil Belkadi</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdelraouf%20Hocini"> Abdelraouf Hocini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a bedimensional simulation program of the electric characteristics of reverse biased lateral polysilicon PIN diode is presented. In this case we have numerically solved the system of partial differential equations formed by Poisson's equation and both continuity equations that take into account the effect of impact ionization. Therefore we will obtain the current-voltage characteristics (I-V) of the reverse-biased structure which may include the effect of breakdown.The geometrical model assumes that the polysilicon layer is composed by a succession of defined mean grain size crystallites, separated by lateral grain boundaries which are parallel to the metallurgic junction. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=breakdown" title="breakdown">breakdown</a>, <a href="https://publications.waset.org/abstracts/search?q=polycrystalline%20silicon" title=" polycrystalline silicon"> polycrystalline silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=PIN" title=" PIN"> PIN</a>, <a href="https://publications.waset.org/abstracts/search?q=grain" title=" grain"> grain</a>, <a href="https://publications.waset.org/abstracts/search?q=impact%20ionization" title=" impact ionization"> impact ionization</a> </p> <a href="https://publications.waset.org/abstracts/1337/simulation-of-i-v-characteristics-of-lateral-pin-diode-on-polysilicon-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/1337.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">381</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">173</span> Flip-Chip Bonding for Monolithic of Matrix-Addressable GaN-Based Micro-Light-Emitting Diodes Array</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chien-Ju%20Chen">Chien-Ju Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Jui%20Yu"> Chia-Jui Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=Jyun-Hao%20Liao"> Jyun-Hao Liao</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Ching%20Wu"> Chia-Ching Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Meng-Chyi%20Wu"> Meng-Chyi Wu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A 64 × 64 GaN-based micro-light-emitting diode array (μLEDA) with 20 μm in pixel size and 40 μm in pitch by flip-chip bonding (FCB) is demonstrated in this study. Besides, an underfilling (UF) technology is applied to the process for improving the uniformity of device. With those configurations, good characteristics are presented, operation voltage and series resistance of a pixel in the 450 nm flip chip μLEDA are 2.89 V and 1077Ω (4.3 mΩ-cm²) at 25 A/cm², respectively. The μLEDA can sustain higher current density compared to conventional LED, and the power of the device is 9.5 μW at 100 μA and 0.42 mW at 20 mA. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN" title="GaN">GaN</a>, <a href="https://publications.waset.org/abstracts/search?q=micro-light-emitting%20diode%20array%28%CE%BCLEDA%29" title=" micro-light-emitting diode array(μLEDA)"> micro-light-emitting diode array(μLEDA)</a>, <a href="https://publications.waset.org/abstracts/search?q=flip-chip%20bonding" title=" flip-chip bonding"> flip-chip bonding</a>, <a href="https://publications.waset.org/abstracts/search?q=underfilling" title=" underfilling"> underfilling</a> </p> <a href="https://publications.waset.org/abstracts/73765/flip-chip-bonding-for-monolithic-of-matrix-addressable-gan-based-micro-light-emitting-diodes-array" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73765.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">423</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">172</span> High-Performance Liquid Chromatographic Method with Diode Array Detection (HPLC-DAD) Analysis of Naproxen and Omeprazole Active Isomers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Marwa%20Ragab">Marwa Ragab</a>, <a href="https://publications.waset.org/abstracts/search?q=Eman%20El-Kimary"> Eman El-Kimary</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Chiral separation and analysis of omeprazole and naproxen enantiomers in tablets were achieved using high-performance liquid chromatographic method with diode array detection (HPLC-DAD). Kromasil Cellucoat chiral column was used as a stationary phase for separation and the eluting solvent consisted of hexane, isopropanol and trifluoroacetic acid in a ratio of: 90, 9.9 and 0.1, respectively. The chromatographic system was suitable for the enantiomeric separation and analysis of active isomers of the drugs. Resolution values of 2.17 and 3.84 were obtained after optimization of the chromatographic conditions for omeprazole and naproxen isomers, respectively. The determination of S-isomers of each drug in their dosage form was fully validated. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chiral%20analysis" title="chiral analysis">chiral analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=esomeprazole" title=" esomeprazole"> esomeprazole</a>, <a href="https://publications.waset.org/abstracts/search?q=S-Naproxen" title=" S-Naproxen"> S-Naproxen</a>, <a href="https://publications.waset.org/abstracts/search?q=HPLC-DAD" title=" HPLC-DAD"> HPLC-DAD</a> </p> <a href="https://publications.waset.org/abstracts/61903/high-performance-liquid-chromatographic-method-with-diode-array-detection-hplc-dad-analysis-of-naproxen-and-omeprazole-active-isomers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/61903.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">301</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">171</span> A Study on Evaluation for Performance Verification of Ni-63 Radioisotope Betavoltaic Battery</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Youngmok%20Yun">Youngmok Yun</a>, <a href="https://publications.waset.org/abstracts/search?q=Bosung%20Kim"> Bosung Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Sungho%20Lee"> Sungho Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyeongsu%20Jeon"> Kyeongsu Jeon</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyunwook%20Hwangbo"> Hyunwook Hwangbo</a>, <a href="https://publications.waset.org/abstracts/search?q=Byounggun%20Choi"> Byounggun Choi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A betavoltaic battery converts nuclear energy released as beta particles (β-) directly into electrical energy. Betavoltaic cells are analogous to photovoltaic cells. The beta particle’s kinetic energy enters a p-n junction and creates electron-hole pairs. Subsequently, the built-in potential of the p-n junction accelerates the electrons and ions to their respective collectors. The major challenges are electrical conversion efficiencies and exact evaluation. In this study, the performance of betavoltaic battery was evaluated. The betavoltaic cell was evaluated in the same condition as radiation from radioactive isotope using by FE-SEM(field emission scanning electron microscope). The average energy of the radiation emitted from the Ni-63 radioisotope is 17.42 keV. FE-SEM is capable of emitting an electron beam of 1-30keV. Therefore, it is possible to evaluate betavoltaic cell without radioactive isotopes. The betavoltaic battery consists of radioisotope that is physically connected on the surface of Si-based PN diode. The performance of betavoltaic battery can be estimated by the efficiency of PN diode unit cell. The current generated by scanning electron microscope with fixed accelerating voltage (17keV) was measured by using faraday cup. Electrical characterization of the p-n junction diode was performed by using Nano Probe Work Station and I-V measurement system. The output value of the betavoltaic cells developed by this research team was 0.162 μw/cm2 and the efficiency was 1.14%. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=betavoltaic" title="betavoltaic">betavoltaic</a>, <a href="https://publications.waset.org/abstracts/search?q=nuclear" title=" nuclear"> nuclear</a>, <a href="https://publications.waset.org/abstracts/search?q=battery" title=" battery"> battery</a>, <a href="https://publications.waset.org/abstracts/search?q=Ni-63" title=" Ni-63"> Ni-63</a>, <a href="https://publications.waset.org/abstracts/search?q=radio-isotope" title=" radio-isotope"> radio-isotope</a> </p> <a href="https://publications.waset.org/abstracts/50012/a-study-on-evaluation-for-performance-verification-of-ni-63-radioisotope-betavoltaic-battery" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/50012.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">258</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">170</span> Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Au/GaN Schottky diodes </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelaziz%20Rabehi">Abdelaziz Rabehi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The current–voltage (I–V) characteristics of Au/GaN Schottky diodes were measured at room temperature. In addition, capacitance–voltage–frequency (C–V–f) characteristics are investigated by considering the interface states (Nss) at frequency range 100 kHz to 1 MHz. From the I–V characteristics of the Schottky diode, ideality factor (n) and barrier height (Φb) values of 1.22 and 0.56 eV, respectively, were obtained from a forward bias I–V plot. In addition, the interface states distribution profile as a function of (Ess − Ev) was extracted from the forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (Φe) for the Schottky diode. The C–V curves gave a barrier height value higher than those obtained from I–V measurements. This discrepancy is due to the different nature of the I–V and C–V measurement techniques. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diodes" title="Schottky diodes">Schottky diodes</a>, <a href="https://publications.waset.org/abstracts/search?q=frequency%20dependence" title=" frequency dependence"> frequency dependence</a>, <a href="https://publications.waset.org/abstracts/search?q=barrier%20height" title=" barrier height"> barrier height</a>, <a href="https://publications.waset.org/abstracts/search?q=interface%20states" title=" interface states "> interface states </a> </p> <a href="https://publications.waset.org/abstracts/5577/characterization-of-current-voltage-i-v-and-capacitance-voltage-frequency-c-v-f-features-of-augan-schottky-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/5577.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span 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