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class="title" id="title">1万伏！我国实现6英寸AlN单晶复合衬底和晶圆制造全流程突破</h1> <div class="info"> <span style="padding-right:1em">日期：2024-11-05</span> <span id="hits">阅读：647</span> </div> <div class="introduce">核心提示：西安电子科技大学郝跃院士课题组张进成教授、李祥东教授团队与松山湖材料实验室王新强教授、袁冶副研究员团队，以及广东致能科技有限公司联合攻关</div><div id="content"><div class="content" id="article"><p> <span style="text-indent: 2em;">近日，西安电子科技大学郝跃院士课题组张进成教授、李祥东教授团队与松山湖材料实验室王新强教授、袁冶副研究员团队，以及广东致能科技有限公司联合攻关，成功基于2~6英寸AlN单晶复合衬底制备了高性能GaN HEMTs晶圆。得益于AlN单晶复合衬底的材料优势 (位错密度居于</span>2×10<sup style="font-size: 12px;">8</sup> cm<sup style="font-size: 12px;">-2</sup><span style="text-indent: 2em;">数量级)，AlGaN缓冲层厚度降至350 nm，外延成本大幅下降，且有效控制晶圆翘曲。这是我国在大尺寸新型衬底制备与应用方向取得的又一重大突破。</span></p> <p>研究发现，AlN单晶复合衬底表面存在的Si、O杂质会造成寄生漏电通道，使得HEMTs器件无法正常关断。团队据此创新提出二次生长AlN埋层方法覆盖杂质层，使其在超宽禁带材料中无法离化，从而显著抑制漏电。实验结果显示，团队所提出的350 nm无掺杂超薄AlGaN缓冲层的横向击穿电压轻松突破10 kV，HEMTs器件关态耐压超8 kV，动态电流崩塌＜20%，阈值电压漂移＜10%，初步通过可靠性评估。部分成果发表在器件领域顶刊IEEE TED（<strong>DOI</strong>: 10.1109/ISPSD59661.2024.10579573）以及ISPSD（DOI: 10.1109/ISPSD59661.2024.10579573）上。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/05/093650482.png" width="586" height="597" alt="" /></p> <p style="text-align: center;">图：基于6英寸AlN单晶复合衬底制造的GaN晶圆，转移特性曲线，动态输出特性曲线和动态转移特性曲线</p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=17092');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=17092"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> <a href="http://www.casmita.com/news/search.php?kw="></a><a href="http://www.casmita.com/news/index.php?catid=4"></a> <div class="bui-box single-mode"> <div class="single-mode-rbox"> <div class="single-mode-rbox-inner"> <div class="title-box"><a 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