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Search results for: Semiconductor

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/></div></noscript> <!-- /Yandex.Metrika counter --> <!-- Matomo --> <!-- End Matomo Code --> <title>Search results for: Semiconductor</title> <meta name="description" content="Search results for: Semiconductor"> <meta name="keywords" content="Semiconductor"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open 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class="col-md-9 mx-auto"> <form method="get" action="https://publications.waset.org/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="Semiconductor"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 156</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: Semiconductor</h1> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">156</span> Electrotechnology for Silicon Refining: Plasma Generator and Arc Furnace: Installations and Theoretical Base</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Ashot%20Navasardian">Ashot Navasardian</a>, <a href="https://publications.waset.org/search?q=Mariam%20Vardanian"> Mariam Vardanian</a>, <a href="https://publications.waset.org/search?q=Vladik%20Vardanian"> Vladik Vardanian</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Metallurgical%20grade%20silicon" title="Metallurgical grade silicon">Metallurgical grade silicon</a>, <a href="https://publications.waset.org/search?q=solar%20grade%20silicon" title=" solar grade silicon"> solar grade silicon</a>, <a href="https://publications.waset.org/search?q=impurity" title=" impurity"> impurity</a>, <a href="https://publications.waset.org/search?q=refining" title=" refining"> refining</a>, <a href="https://publications.waset.org/search?q=plasma." title=" plasma."> plasma.</a> </p> <a href="https://publications.waset.org/10003042/electrotechnology-for-silicon-refining-plasma-generator-and-arc-furnace-installations-and-theoretical-base" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10003042/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10003042/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10003042/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10003042/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10003042/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10003042/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10003042/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10003042/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10003042/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10003042/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10003042.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1207</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">155</span> Synchronization of Semiconductor Laser Networks</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=R.%20M.%20L%C3%B3pez-Guti%C3%A9rrez">R. M. López-Gutiérrez</a>, <a href="https://publications.waset.org/search?q=L.%20Cardoza-Avenda%C3%B1o"> L. Cardoza-Avendaño</a>, <a href="https://publications.waset.org/search?q=H.%20Cervantes-De%20%C3%81vila"> H. Cervantes-De Ávila</a>, <a href="https://publications.waset.org/search?q=J.%20A.%20Michel-Macarty"> J. A. Michel-Macarty</a>, <a href="https://publications.waset.org/search?q=C.%20Cruz-Hern%C3%A1ndez"> C. Cruz-Hernández</a>, <a href="https://publications.waset.org/search?q=A.%20Arellano-Delgado"> A. Arellano-Delgado</a>, <a href="https://publications.waset.org/search?q=R.%20Carmona-Rodr%C3%ADguez"> R. Carmona-Rodríguez</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, synchronization of multiple chaotic semiconductor lasers is achieved by appealing to complex system theory. In particular, we consider dynamical networks composed by semiconductor laser, as interconnected nodes, where the interaction in the networks are defined by coupling the first state of each node. An interest case is synchronized with master-slave configuration in star topology. Nodes of these networks are modeled for the laser and simulate by Matlab. These results are applicable to private communication. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Synchronization" title="Synchronization">Synchronization</a>, <a href="https://publications.waset.org/search?q=chaotic%20laser" title=" chaotic laser"> chaotic laser</a>, <a href="https://publications.waset.org/search?q=network." title=" network."> network.</a> </p> <a href="https://publications.waset.org/10002469/synchronization-of-semiconductor-laser-networks" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10002469/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10002469/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10002469/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10002469/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10002469/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10002469/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10002469/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10002469/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10002469/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10002469/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10002469.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2311</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">154</span> Yield Prediction Using Support Vectors Based Under-Sampling in Semiconductor Process</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Sae-Rom%20Pak">Sae-Rom Pak</a>, <a href="https://publications.waset.org/search?q=Seung%20Hwan%20Park"> Seung Hwan Park</a>, <a href="https://publications.waset.org/search?q=Jeong%20Ho%20Cho"> Jeong Ho Cho</a>, <a href="https://publications.waset.org/search?q=Daewoong%20An"> Daewoong An</a>, <a href="https://publications.waset.org/search?q=Cheong-Sool%20Park">Cheong-Sool Park</a>, <a href="https://publications.waset.org/search?q=Jun%20Seok%20Kim"> Jun Seok Kim</a>, <a href="https://publications.waset.org/search?q=Jun-Geol%20Baek"> Jun-Geol Baek</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>It is important to predict yield in semiconductor test process in order to increase yield. In this study, yield prediction means finding out defective die, wafer or lot effectively. Semiconductor test process consists of some test steps and each test includes various test items. In other world, test data has a big and complicated characteristic. It also is disproportionably distributed as the number of data belonging to FAIL class is extremely low. For yield prediction, general data mining techniques have a limitation without any data preprocessing due to eigen properties of test data. Therefore, this study proposes an under-sampling method using support vector machine (SVM) to eliminate an imbalanced characteristic. For evaluating a performance, randomly under-sampling method is compared with the proposed method using actual semiconductor test data. As a result, sampling method using SVM is effective in generating robust model for yield prediction.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Yield%20Prediction" title="Yield Prediction">Yield Prediction</a>, <a href="https://publications.waset.org/search?q=Semiconductor%20Test%20Process" title=" Semiconductor Test Process"> Semiconductor Test Process</a>, <a href="https://publications.waset.org/search?q=Support%0D%0AVector%20Machine" title=" Support Vector Machine"> Support Vector Machine</a>, <a href="https://publications.waset.org/search?q=Under%20Sampling" title=" Under Sampling"> Under Sampling</a> </p> <a href="https://publications.waset.org/5620/yield-prediction-using-support-vectors-based-under-sampling-in-semiconductor-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/5620/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/5620/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/5620/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/5620/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/5620/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/5620/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/5620/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/5620/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/5620/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/5620/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/5620.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2398</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">153</span> Average Current Estimation Technique for Reliability Analysis of Multiple Semiconductor Interconnects</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Ki-Young%20Kim">Ki-Young Kim</a>, <a href="https://publications.waset.org/search?q=Jae-Ho%20Lim"> Jae-Ho Lim</a>, <a href="https://publications.waset.org/search?q=Deok-Min%20Kim"> Deok-Min Kim</a>, <a href="https://publications.waset.org/search?q=Seok-Yoon%20Kim"> Seok-Yoon Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Average current analysis checking the impact of current flow is very important to guarantee the reliability of semiconductor systems. As semiconductor process technologies improve, the coupling capacitance often become bigger than self capacitances. In this paper, we propose an analytic technique for analyzing average current on interconnects in multi-conductor structures. The proposed technique has shown to yield the acceptable errors compared to HSPICE results while providing computational efficiency. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=current%20moment" title="current moment">current moment</a>, <a href="https://publications.waset.org/search?q=interconnect%20modeling" title=" interconnect modeling"> interconnect modeling</a>, <a href="https://publications.waset.org/search?q=reliability%0Aanalysis" title=" reliability analysis"> reliability analysis</a>, <a href="https://publications.waset.org/search?q=worst-case%20switching" title=" worst-case switching"> worst-case switching</a> </p> <a href="https://publications.waset.org/509/average-current-estimation-technique-for-reliability-analysis-of-multiple-semiconductor-interconnects" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/509/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/509/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/509/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/509/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/509/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/509/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/509/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/509/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/509/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/509/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/509.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1387</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">152</span> Identifying Key Success Factor For Supply Chain Management System in the Semiconductor Industry - A Focus Group Approach</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=T.%20P.%20Lu">T. P. Lu</a>, <a href="https://publications.waset.org/search?q=B.%20N.%20Hwang"> B. N. Hwang</a>, <a href="https://publications.waset.org/search?q=T.%20Z.%20Liou"> T. Z. Liou</a>, <a href="https://publications.waset.org/search?q=Y.%20L.%20Lin"> Y. L. Lin</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>Developing a supply chain management (SCM) system is costly, but important. However, because of its complicated nature, not many of such projects are considered successful. Few research publications directly relate to key success factors (KSFs) for implementing a SCM system. Motivated by the above, this research proposes a hierarchy of KSFs for SCM system implementation in the semiconductor industry by using a two-step approach. First, the literature review indicates the initial hierarchy. The second step includes a focus group approach to finalize the proposed KSF hierarchy by extracting valuable experiences from executives and managers that actively participated in a project, which successfully establish a seamless SCM integration between the world&#39;s largest semiconductor foundry manufacturing company and the world&#39;s largest assembly and testing company. Future project executives may refer the resulting KSF hierarchy as a checklist for SCM system implementation in semiconductor or related industries.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Focus%20group" title="Focus group">Focus group</a>, <a href="https://publications.waset.org/search?q=key%20success%20factors" title=" key success factors"> key success factors</a>, <a href="https://publications.waset.org/search?q=supply%20chain%20management" title=" supply chain management"> supply chain management</a>, <a href="https://publications.waset.org/search?q=semiconductor%20industry." title=" semiconductor industry."> semiconductor industry.</a> </p> <a href="https://publications.waset.org/1527/identifying-key-success-factor-for-supply-chain-management-system-in-the-semiconductor-industry-a-focus-group-approach" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/1527/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/1527/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/1527/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/1527/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/1527/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/1527/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/1527/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/1527/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/1527/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/1527/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/1527.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1539</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">151</span> Determination of Optical Constants of Semiconductor Thin Films by Ellipsometry</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=A%C3%AFssa%20Manallah">Aïssa Manallah</a>, <a href="https://publications.waset.org/search?q=Mohamed%20Bouafia"> Mohamed Bouafia</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Ellipsometry" title="Ellipsometry">Ellipsometry</a>, <a href="https://publications.waset.org/search?q=optical%20constants" title=" optical constants"> optical constants</a>, <a href="https://publications.waset.org/search?q=semiconductors" title=" semiconductors"> semiconductors</a>, <a href="https://publications.waset.org/search?q=thin%20films." title=" thin films."> thin films.</a> </p> <a href="https://publications.waset.org/10005029/determination-of-optical-constants-of-semiconductor-thin-films-by-ellipsometry" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10005029/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10005029/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10005029/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10005029/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10005029/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10005029/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10005029/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10005029/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10005029/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10005029/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10005029.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1337</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">150</span> Effective Scheduling of Semiconductor Manufacturing using Simulation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Ingy%20A.%20El-Khouly">Ingy A. El-Khouly</a>, <a href="https://publications.waset.org/search?q=Khaled%20S.%20El-Kilany"> Khaled S. El-Kilany</a>, <a href="https://publications.waset.org/search?q=Aziz%20E.%20El-Sayed"> Aziz E. El-Sayed</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The process of wafer fabrication is arguably the most technologically complex and capital intensive stage in semiconductor manufacturing. This large-scale discrete-event process is highly reentrant, and involves hundreds of machines, restrictions, and processing steps. Therefore, production control of wafer fabrication facilities (fab), specifically scheduling, is one of the most challenging problems that this industry faces. Dispatching rules have been extensively applied to the scheduling problems in semiconductor manufacturing. Moreover, lot release policies are commonly used in this manufacturing setting to further improve the performance of such systems and reduce its inherent variability. In this work, simulation is used in the scheduling of re-entrant flow shop manufacturing systems with an application in semiconductor wafer fabrication; where, a simulation model has been developed for the Intel Five-Machine Six Step Mini-Fab using the ExtendTM simulation environment. The Mini-Fab has been selected as it captures the challenges involved in scheduling the highly re-entrant semiconductor manufacturing lines. A number of scenarios have been developed and have been used to evaluate the effect of different dispatching rules and lot release policies on the selected performance measures. Results of simulation showed that the performance of the Mini-Fab can be drastically improved using a combination of dispatching rules and lot release policy. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Dispatching%20rules" title="Dispatching rules">Dispatching rules</a>, <a href="https://publications.waset.org/search?q=lot%20release%20policy" title=" lot release policy"> lot release policy</a>, <a href="https://publications.waset.org/search?q=re-entrant%20flowshop" title=" re-entrant flowshop"> re-entrant flowshop</a>, <a href="https://publications.waset.org/search?q=semiconductor%20manufacturing." title=" semiconductor manufacturing."> semiconductor manufacturing.</a> </p> <a href="https://publications.waset.org/10502/effective-scheduling-of-semiconductor-manufacturing-using-simulation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10502/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10502/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10502/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10502/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10502/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10502/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10502/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10502/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10502/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10502/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10502.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2571</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">149</span> A Spatial Point Pattern Analysis to Recognize Fail Bit Patterns in Semiconductor Manufacturing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Youngji%20Yoo">Youngji Yoo</a>, <a href="https://publications.waset.org/search?q=Seung%20Hwan%20Park"> Seung Hwan Park</a>, <a href="https://publications.waset.org/search?q=Daewoong%20An"> Daewoong An</a>, <a href="https://publications.waset.org/search?q=Sung-Shick%20Kim"> Sung-Shick Kim</a>, <a href="https://publications.waset.org/search?q=Jun-Geol%20Baek"> Jun-Geol Baek</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>The yield management system is very important to produce high-quality semiconductor chips in the semiconductor manufacturing process. In order to improve quality of semiconductors, various tests are conducted in the post fabrication (FAB) process. During the test process, large amount of data are collected and the data includes a lot of information about defect. In general, the defect on the wafer is the main causes of yield loss. Therefore, analyzing the defect data is necessary to improve performance of yield prediction. The wafer bin map (WBM) is one of the data collected in the test process and includes defect information such as the fail bit patterns. The fail bit has characteristics of spatial point patterns. Therefore, this paper proposes the feature extraction method using the spatial point pattern analysis. Actual data obtained from the semiconductor process is used for experiments and the experimental result shows that the proposed method is more accurately recognize the fail bit patterns.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Semiconductor" title="Semiconductor">Semiconductor</a>, <a href="https://publications.waset.org/search?q=wafer%20bin%20map%20%28WBM%29" title=" wafer bin map (WBM)"> wafer bin map (WBM)</a>, <a href="https://publications.waset.org/search?q=feature%20extraction" title=" feature extraction"> feature extraction</a>, <a href="https://publications.waset.org/search?q=spatial%20point%20patterns" title=" spatial point patterns"> spatial point patterns</a>, <a href="https://publications.waset.org/search?q=contour%20map." title=" contour map."> contour map.</a> </p> <a href="https://publications.waset.org/9997463/a-spatial-point-pattern-analysis-to-recognize-fail-bit-patterns-in-semiconductor-manufacturing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/9997463/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/9997463/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/9997463/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/9997463/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/9997463/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/9997463/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/9997463/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/9997463/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/9997463/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/9997463/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/9997463.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2500</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">148</span> Study of a Fabry-Perot Resonator</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=F.%20Hadjaj">F. Hadjaj</a>, <a href="https://publications.waset.org/search?q=A.%20Belghachi"> A. Belghachi</a>, <a href="https://publications.waset.org/search?q=A.%20Halmaoui"> A. Halmaoui</a>, <a href="https://publications.waset.org/search?q=M.%20Belhadj"> M. Belhadj</a>, <a href="https://publications.waset.org/search?q=H.%20Mazouz"> H. Mazouz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Fabry-Perot%20Resonator" title="Fabry-Perot Resonator">Fabry-Perot Resonator</a>, <a href="https://publications.waset.org/search?q=laser%20diode." title=" laser diode."> laser diode.</a> </p> <a href="https://publications.waset.org/9996849/study-of-a-fabry-perot-resonator" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/9996849/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/9996849/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/9996849/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/9996849/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/9996849/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/9996849/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/9996849/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/9996849/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/9996849/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/9996849/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/9996849.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">8964</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">147</span> Research on Modern Semiconductor Converters and the Usage of SiC Devices in the Technology Centre of Ostrava</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=P.%20Vacul%C3%ADk">P. Vaculík</a>, <a href="https://publications.waset.org/search?q=P.%20Ka%C5%88ovsk%C3%BD"> P. Kaňovský</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The following article presents Technology Centre of Ostrava (TCO) in the Czech Republic describing the structure and main research areas realized by the project ENET - Energy Units for Utilization of non Traditional Energy Sources. More details are presented from the research program dealing with transformation, accumulation and distribution of electric energy. Technology Centre has its own energy mix consisting of alternative sources of fuel sources that use of process gases from the storage part and also the energy from distribution network. The article will be focus on the properties and application possibilities SiC semiconductor devices for power semiconductor converter for photovoltaic systems. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=SiC" title="SiC">SiC</a>, <a href="https://publications.waset.org/search?q=Si" title=" Si"> Si</a>, <a href="https://publications.waset.org/search?q=Technology%20Centre%20of%20Ostrava" title=" Technology Centre of Ostrava"> Technology Centre of Ostrava</a>, <a href="https://publications.waset.org/search?q=Photovoltaic%0D%0ASystems" title=" Photovoltaic Systems"> Photovoltaic Systems</a>, <a href="https://publications.waset.org/search?q=DC%2FDC%20Converter" title=" DC/DC Converter"> DC/DC Converter</a>, <a href="https://publications.waset.org/search?q=Simulation." title=" Simulation."> Simulation.</a> </p> <a href="https://publications.waset.org/10001381/research-on-modern-semiconductor-converters-and-the-usage-of-sic-devices-in-the-technology-centre-of-ostrava" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10001381/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10001381/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10001381/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10001381/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10001381/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10001381/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10001381/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10001381/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10001381/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10001381/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10001381.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1841</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">146</span> Pattern Recognition Using Feature Based Die-Map Clusteringin the Semiconductor Manufacturing Process</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Seung%20Hwan%20Park">Seung Hwan Park</a>, <a href="https://publications.waset.org/search?q=Cheng-Sool%20Park"> Cheng-Sool Park</a>, <a href="https://publications.waset.org/search?q=Jun%20Seok%20Kim"> Jun Seok Kim</a>, <a href="https://publications.waset.org/search?q=Youngji%20Yoo"> Youngji Yoo</a>, <a href="https://publications.waset.org/search?q=Daewoong%20An"> Daewoong An</a>, <a href="https://publications.waset.org/search?q=Jun-Geol%20Baek"> Jun-Geol Baek</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>Depending on the big data analysis becomes important, yield prediction using data from the semiconductor process is essential. In general, yield prediction and analysis of the causes of the failure are closely related. The purpose of this study is to analyze pattern affects the final test results using a die map based clustering. Many researches have been conducted using die data from the semiconductor test process. However, analysis has limitation as the test data is less directly related to the final test results. Therefore, this study proposes a framework for analysis through clustering using more detailed data than existing die data. This study consists of three phases. In the first phase, die map is created through fail bit data in each sub-area of die. In the second phase, clustering using map data is performed. And the third stage is to find patterns that affect final test result. Finally, the proposed three steps are applied to actual industrial data and experimental results showed the potential field application.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Die-Map%20Clustering" title="Die-Map Clustering">Die-Map Clustering</a>, <a href="https://publications.waset.org/search?q=Feature%20Extraction" title=" Feature Extraction"> Feature Extraction</a>, <a href="https://publications.waset.org/search?q=Pattern%20Recognition" title=" Pattern Recognition"> Pattern Recognition</a>, <a href="https://publications.waset.org/search?q=Semiconductor%20Manufacturing%20Process." title=" Semiconductor Manufacturing Process."> Semiconductor Manufacturing Process.</a> </p> <a href="https://publications.waset.org/9997462/pattern-recognition-using-feature-based-die-map-clusteringin-the-semiconductor-manufacturing-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/9997462/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/9997462/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/9997462/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/9997462/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/9997462/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/9997462/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/9997462/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/9997462/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/9997462/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/9997462/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/9997462.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3151</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">145</span> Solving Differential&#039;s Equation of Carrier Load on Semiconductor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Morteza%20Amirabadi">Morteza Amirabadi</a>, <a href="https://publications.waset.org/search?q=Vahid%20Fayaz">Vahid Fayaz </a>, <a href="https://publications.waset.org/search?q=Fereshteh%20Felegary"> Fereshteh Felegary</a>, <a href="https://publications.waset.org/search?q=Hossien%20Hossienkhani"> Hossien Hossienkhani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The most suitable Semiconductor detector, Cadmium Zinc Teloraid , has unique properties because of high Atomic number and wide Brand Gap . It has been tried in this project with different processes such as Lead , Diffusion , Produce and Recombination , effect of Trapping and injection carrier of CdZnTe , to get hole and then present a complete answer of it . Then we should investigate the movement of carrier ( Electron – Hole ) by using above answer. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Semiconcuctor%20detector" title="Semiconcuctor detector">Semiconcuctor detector</a>, <a href="https://publications.waset.org/search?q=Trapping" title=" Trapping"> Trapping</a>, <a href="https://publications.waset.org/search?q=Recommbination" title=" Recommbination"> Recommbination</a>, <a href="https://publications.waset.org/search?q=Diffusion" title=" Diffusion"> Diffusion</a> </p> <a href="https://publications.waset.org/10727/solving-differentials-equation-of-carrier-load-on-semiconductor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10727/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10727/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10727/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10727/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10727/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10727/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10727/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10727/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10727/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10727/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10727.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1453</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">144</span> On Use of Semiconductor Detector Arrays on COMPASS Tokamak</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=V.%20Weinzettl">V. Weinzettl</a>, <a href="https://publications.waset.org/search?q=M.%20Imrisek"> M. Imrisek</a>, <a href="https://publications.waset.org/search?q=J.%20Havlicek"> J. Havlicek</a>, <a href="https://publications.waset.org/search?q=J.%20Mlynar"> J. Mlynar</a>, <a href="https://publications.waset.org/search?q=D.%20Naydenkova"> D. Naydenkova</a>, <a href="https://publications.waset.org/search?q=P.%20Hacek"> P. Hacek</a>, <a href="https://publications.waset.org/search?q=M.%20Hron"> M. Hron</a>, <a href="https://publications.waset.org/search?q=F.%20Janky"> F. Janky</a>, <a href="https://publications.waset.org/search?q=D.%20Sarychev"> D. Sarychev</a>, <a href="https://publications.waset.org/search?q=M.%20Berta"> M. Berta</a>, <a href="https://publications.waset.org/search?q=A.%20Bencze"> A. Bencze</a>, <a href="https://publications.waset.org/search?q=T.%20Szabolics"> T. Szabolics</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Semiconductor detector arrays are widely used in high-temperature plasma diagnostics. They have a fast response, which allows observation of many processes and instabilities in tokamaks. In this paper, there are reviewed several diagnostics based on semiconductor arrays as cameras, AXUV photodiodes (referred often as fast “bolometers") and detectors of both soft X-rays and visible light installed on the COMPASS tokamak recently. Fresh results from both spring and summer campaigns in 2012 are introduced. Examples of the utilization of the detectors are shown on the plasma shape determination, fast calculation of the radiation center, two-dimensional plasma radiation tomography in different spectral ranges, observation of impurity inflow, and also on investigation of MHD activity in the COMPASS tokamak discharges. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Bolometry" title="Bolometry">Bolometry</a>, <a href="https://publications.waset.org/search?q=plasma%20diagnostics" title=" plasma diagnostics"> plasma diagnostics</a>, <a href="https://publications.waset.org/search?q=soft%20X-rays" title=" soft X-rays"> soft X-rays</a>, <a href="https://publications.waset.org/search?q=tokamak." title=" tokamak."> tokamak.</a> </p> <a href="https://publications.waset.org/5150/on-use-of-semiconductor-detector-arrays-on-compass-tokamak" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/5150/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/5150/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/5150/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/5150/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/5150/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/5150/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/5150/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/5150/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/5150/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/5150/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/5150.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2590</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">143</span> Wavelength Conversion of Dispersion Managed Solitons at 100 Gbps through Semiconductor Optical Amplifier</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Kadam%20Bhambri">Kadam Bhambri</a>, <a href="https://publications.waset.org/search?q=Neena%20Gupta"> Neena Gupta</a> </p> <p class="card-text"><strong>Abstract:</strong></p> All optical wavelength conversion is essential in present day optical networks for transparent interoperability, contention resolution, and wavelength routing. The incorporation of all optical wavelength convertors leads to better utilization of the network resources and hence improves the efficiency of optical networks. Wavelength convertors that can work with Dispersion Managed (DM) solitons are attractive due to their superior transmission capabilities. In this paper, wavelength conversion for dispersion managed soliton signals was demonstrated at 100 Gbps through semiconductor optical amplifier and an optical filter. The wavelength conversion was achieved for a 1550 nm input signal to1555nm output signal. The output signal was measured in terms of BER, Q factor and system margin.&nbsp;&nbsp; &nbsp; <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=All%20optical%20wavelength%20conversion" title="All optical wavelength conversion">All optical wavelength conversion</a>, <a href="https://publications.waset.org/search?q=dispersion%20managed%20solitons" title=" dispersion managed solitons"> dispersion managed solitons</a>, <a href="https://publications.waset.org/search?q=semiconductor%20optical%20amplifier" title=" semiconductor optical amplifier"> semiconductor optical amplifier</a>, <a href="https://publications.waset.org/search?q=cross%20gain%20modulation." title=" cross gain modulation."> cross gain modulation.</a> </p> <a href="https://publications.waset.org/10005279/wavelength-conversion-of-dispersion-managed-solitons-at-100-gbps-through-semiconductor-optical-amplifier" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10005279/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10005279/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10005279/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10005279/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10005279/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10005279/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10005279/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10005279/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10005279/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10005279/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10005279.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1392</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">142</span> Application of Machine Learning Methods to Online Test Error Detection in Semiconductor Test</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Matthias%20Kirmse">Matthias Kirmse</a>, <a href="https://publications.waset.org/search?q=Uwe%20Petersohn"> Uwe Petersohn</a>, <a href="https://publications.waset.org/search?q=Elief%20Paffrath"> Elief Paffrath</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>As in today&#39;s semiconductor industries test costs can make up to 50 percent of the total production costs, an efficient test error detection becomes more and more important. In this paper, we present a new machine learning approach to test error detection that should provide a faster recognition of test system faults as well as an improved test error recall. The key idea is to learn a classifier ensemble, detecting typical test error patterns in wafer test results immediately after finishing these tests. Since test error detection has not yet been discussed in the machine learning community, we define central problem-relevant terms and provide an analysis of important domain properties. Finally, we present comparative studies reflecting the failure detection performance of three individual classifiers and three ensemble methods based upon them. As base classifiers we chose a decision tree learner, a support vector machine and a Bayesian network, while the compared ensemble methods were simple and weighted majority vote as well as stacking. For the evaluation, we used cross validation and a specially designed practical simulation. By implementing our approach in a semiconductor test department for the observation of two products, we proofed its practical applicability.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Ensemble%20methods" title="Ensemble methods">Ensemble methods</a>, <a href="https://publications.waset.org/search?q=fault%20detection" title=" fault detection"> fault detection</a>, <a href="https://publications.waset.org/search?q=machine%20learning" title=" machine learning"> machine learning</a>, <a href="https://publications.waset.org/search?q=semiconductor%20test." title=" semiconductor test."> semiconductor test.</a> </p> <a href="https://publications.waset.org/8547/application-of-machine-learning-methods-to-online-test-error-detection-in-semiconductor-test" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/8547/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/8547/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/8547/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/8547/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/8547/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/8547/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/8547/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/8547/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/8547/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/8547/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/8547.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2274</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">141</span> Multicasting Characteristics of All-Optical Triode Based On Negative Feedback Semiconductor Optical Amplifiers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=S.%20Aisyah%20Azizan">S. Aisyah Azizan</a>, <a href="https://publications.waset.org/search?q=M.%20Syafiq%20Azmi"> M. Syafiq Azmi</a>, <a href="https://publications.waset.org/search?q=Yuki%20Harada"> Yuki Harada</a>, <a href="https://publications.waset.org/search?q=Yoshinobu%20Maeda"> Yoshinobu Maeda</a>, <a href="https://publications.waset.org/search?q=Takaomi%20Matsutani"> Takaomi Matsutani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>We introduced an all-optical multicasting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multicasting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multicasting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Cross%20gain%20modulation" title="Cross gain modulation">Cross gain modulation</a>, <a href="https://publications.waset.org/search?q=multicasting" title=" multicasting"> multicasting</a>, <a href="https://publications.waset.org/search?q=negative%0D%0Afeedback%20optical%20amplifier" title=" negative feedback optical amplifier"> negative feedback optical amplifier</a>, <a href="https://publications.waset.org/search?q=semiconductor%20optical%20amplifier." title=" semiconductor optical amplifier."> semiconductor optical amplifier.</a> </p> <a href="https://publications.waset.org/9999905/multicasting-characteristics-of-all-optical-triode-based-on-negative-feedback-semiconductor-optical-amplifiers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/9999905/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/9999905/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/9999905/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/9999905/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/9999905/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/9999905/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/9999905/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/9999905/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/9999905/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/9999905/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/9999905.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1928</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">140</span> Semiconductor Supported Gold Nanoparticles for Photodegradation of Rhodamine B</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Ahmad%20Alshammari">Ahmad Alshammari</a>, <a href="https://publications.waset.org/search?q=Abdulaziz%20Bagabas"> Abdulaziz Bagabas</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>Rhodamine B (RB) is a toxic dye used extensively in textile industry, which must be remediated before its drainage to environment. In the present study, supported gold nanoparticles on commercially available titania and zincite were successfully prepared and then their activity on the photodegradation of RB under UV A light irradiation were evaluated. The synthesized photocatalysts were characterized by ICP, BET, XRD, and TEM. Kinetic results showed that Au/TiO2 was an inferior photocatalyst to Au/ZnO. This observation could be attributed to the strong reflection of UV irradiation by gold nanoparticles over TiO2 support.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Supported%20AuNPs" title="Supported AuNPs">Supported AuNPs</a>, <a href="https://publications.waset.org/search?q=Semiconductor%20photocatalyst" title=" Semiconductor photocatalyst"> Semiconductor photocatalyst</a>, <a href="https://publications.waset.org/search?q=Photodegradation" title=" Photodegradation"> Photodegradation</a>, <a href="https://publications.waset.org/search?q=Rhodamine%20B." title=" Rhodamine B."> Rhodamine B.</a> </p> <a href="https://publications.waset.org/10000208/semiconductor-supported-gold-nanoparticles-for-photodegradation-of-rhodamine-b" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10000208/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10000208/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10000208/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10000208/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10000208/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10000208/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10000208/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10000208/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10000208/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10000208/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10000208.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2281</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">139</span> Efficiency Enhancement of PWM Controlled Water Electrolysis Cells</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=S.K.%20Mazloomi">S.K. Mazloomi</a>, <a href="https://publications.waset.org/search?q=Nasri%20b.%20Sulaiman"> Nasri b. Sulaiman</a> </p> <p class="card-text"><strong>Abstract:</strong></p> By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Power%20switch" title="Power switch">Power switch</a>, <a href="https://publications.waset.org/search?q=PWM" title=" PWM"> PWM</a>, <a href="https://publications.waset.org/search?q=Semiconductor%20switch" title=" Semiconductor switch"> Semiconductor switch</a>, <a href="https://publications.waset.org/search?q=Waterelectrolysis" title=" Waterelectrolysis"> Waterelectrolysis</a> </p> <a href="https://publications.waset.org/1068/efficiency-enhancement-of-pwm-controlled-water-electrolysis-cells" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/1068/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/1068/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/1068/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/1068/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/1068/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/1068/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/1068/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/1068/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/1068/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/1068/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/1068.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3474</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">138</span> Application of Strong Optical Feedback to Enhance the Modulation Bandwidth of Semiconductor Lasers to the Millimeter-Wave Band</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Moustafa%20Ahmed">Moustafa Ahmed</a>, <a href="https://publications.waset.org/search?q=Ahmed%20Bakry"> Ahmed Bakry</a>, <a href="https://publications.waset.org/search?q=Fumio%20Koyama"> Fumio Koyama</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>We report on the use of strong external optical feedback to enhance the modulation response of semiconductor lasers over a frequency passband around modulation frequencies higher than 60 GHz. We show that this modulation enhancement is a type of photon-photon resonance (PPR) of oscillating modes in the external cavity formed between the laser and the external reflector. The study is based on a time-delay rate equation model that takes into account both the strong feedback and multiple reflections in the external cavity. We examine the harmonic and intermodulation distortions associated with single and two-tone modulations in the mm-wave band of the resonant modulation. We show that compared with solitary lasers modulated around the carrier-photon resonance frequency, the present mm-wave modulated signal has lower distortions.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Distortion" title="Distortion">Distortion</a>, <a href="https://publications.waset.org/search?q=intensity%20modulation" title=" intensity modulation"> intensity modulation</a>, <a href="https://publications.waset.org/search?q=optical%20feedback" title=" optical feedback"> optical feedback</a>, <a href="https://publications.waset.org/search?q=semiconductor%20laser." title=" semiconductor laser."> semiconductor laser.</a> </p> <a href="https://publications.waset.org/10000137/application-of-strong-optical-feedback-to-enhance-the-modulation-bandwidth-of-semiconductor-lasers-to-the-millimeter-wave-band" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10000137/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10000137/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10000137/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10000137/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10000137/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10000137/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10000137/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10000137/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10000137/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10000137/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10000137.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2582</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">137</span> Modeling Reflection and Transmission of Elastodiffussive Wave Sata Semiconductor Interface</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=A.%20A.%20Sharma">A. A. Sharma</a>, <a href="https://publications.waset.org/search?q=B.%20J.%20N.%20Sharma"> B. J. N. Sharma</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor half-space and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers&rsquo; diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Quasilongitudinal" title="Quasilongitudinal">Quasilongitudinal</a>, <a href="https://publications.waset.org/search?q=reflection%20and%20transmission" title=" reflection and transmission"> reflection and transmission</a>, <a href="https://publications.waset.org/search?q=semiconductors" title=" semiconductors"> semiconductors</a>, <a href="https://publications.waset.org/search?q=acoustics." title=" acoustics."> acoustics.</a> </p> <a href="https://publications.waset.org/10001640/modeling-reflection-and-transmission-of-elastodiffussive-wave-sata-semiconductor-interface" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10001640/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10001640/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10001640/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10001640/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10001640/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10001640/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10001640/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10001640/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10001640/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10001640/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10001640.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1207</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">136</span> Depletion Layer Parameters of Al-MoO3-P-CdTe-Al MOS Structures</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=A.%20C.%20Sarmah">A. C. Sarmah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (&lt;10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Debye%20length" title="Debye length">Debye length</a>, <a href="https://publications.waset.org/search?q=Depletion%20width" title=" Depletion width"> Depletion width</a>, <a href="https://publications.waset.org/search?q=flat%20band%0D%0Acapacitance" title=" flat band capacitance"> flat band capacitance</a>, <a href="https://publications.waset.org/search?q=impurity%20concentration." title=" impurity concentration."> impurity concentration.</a> </p> <a href="https://publications.waset.org/10001008/depletion-layer-parameters-of-al-moo3-p-cdte-al-mos-structures" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10001008/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10001008/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10001008/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10001008/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10001008/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10001008/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10001008/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10001008/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10001008/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10001008/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10001008.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1569</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">135</span> The Analysis of Photoconductive Semiconductor Switch Operation in the Frequency of 10 GHz</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Morteza%20Fathipour">Morteza Fathipour</a>, <a href="https://publications.waset.org/search?q=Seyed%20Nasrolah%20Anousheh"> Seyed Nasrolah Anousheh</a>, <a href="https://publications.waset.org/search?q=Kaveh%20Ghiafeh%20Davoudi"> Kaveh Ghiafeh Davoudi</a>, <a href="https://publications.waset.org/search?q=Vala%20Fathipour">Vala Fathipour</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A device analysis of the photoconductive semiconductor switch is carried out to investigate distribution of electric field and carrier concentrations as well as the current density distribution. The operation of this device was then investigated as a switch operating in X band. It is shown that despite the presence of symmetry geometry, switch current density of the on-state steady state mode is distributed asymmetrically throughout the device. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Band%20X" title="Band X">Band X</a>, <a href="https://publications.waset.org/search?q=Gallium-Arsenide" title=" Gallium-Arsenide"> Gallium-Arsenide</a>, <a href="https://publications.waset.org/search?q=Mixed%20mode" title=" Mixed mode"> Mixed mode</a>, <a href="https://publications.waset.org/search?q=PCSS" title=" PCSS"> PCSS</a>, <a href="https://publications.waset.org/search?q=Photoconductivity." title="Photoconductivity.">Photoconductivity.</a> </p> <a href="https://publications.waset.org/6305/the-analysis-of-photoconductive-semiconductor-switch-operation-in-the-frequency-of-10-ghz" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/6305/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/6305/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/6305/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/6305/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/6305/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/6305/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/6305/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/6305/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/6305/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/6305/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/6305.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1756</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">134</span> 0.13-µm Complementary Metal-Oxide Semiconductor Vector Modulator for Beamforming System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=J.%20S.%20Kim">J. S. Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents a 0.13-&micro;m Complementary Metal-Oxide Semiconductor (CMOS) vector modulator for beamforming system. The vector modulator features a 360&deg; phase and gain range of -10 dB to 10 dB with a root mean square phase and amplitude error of only 2.2&deg; and 0.45 dB, respectively. These features make it a suitable for wireless backhaul system in the 5 GHz industrial, scientific, and medical (ISM) bands. It draws a current of 20.4 mA from a 1.2 V supply. The total chip size is 1.87x1.34 mm&sup2;.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS" title="CMOS">CMOS</a>, <a href="https://publications.waset.org/search?q=vector%20modulator" title=" vector modulator"> vector modulator</a>, <a href="https://publications.waset.org/search?q=beamforming" title=" beamforming"> beamforming</a>, <a href="https://publications.waset.org/search?q=wireless%20backhaul" title=" wireless backhaul"> wireless backhaul</a>, <a href="https://publications.waset.org/search?q=ISM." title=" ISM."> ISM.</a> </p> <a href="https://publications.waset.org/10006837/013-m-complementary-metal-oxide-semiconductor-vector-modulator-for-beamforming-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10006837/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10006837/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10006837/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10006837/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10006837/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10006837/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10006837/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10006837/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10006837/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10006837/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10006837.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1057</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">133</span> Application of Molecular Materials in the Manufacture of Flexible and Organic Devices for Photovoltaic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=M.%20G%C3%B3mez-G%C3%B3mez">M. Gómez-Gómez</a>, <a href="https://publications.waset.org/search?q=M.%20E.%20S%C3%A1nchez-Vergara"> M. E. Sánchez-Vergara</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Electrical%20properties" title="Electrical properties">Electrical properties</a>, <a href="https://publications.waset.org/search?q=optical%20gap" title=" optical gap"> optical gap</a>, <a href="https://publications.waset.org/search?q=phthalocyanine" title=" phthalocyanine"> phthalocyanine</a>, <a href="https://publications.waset.org/search?q=thin%20film." title=" thin film."> thin film.</a> </p> <a href="https://publications.waset.org/10012627/application-of-molecular-materials-in-the-manufacture-of-flexible-and-organic-devices-for-photovoltaic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10012627/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10012627/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10012627/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10012627/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10012627/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10012627/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10012627/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10012627/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10012627/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10012627/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10012627.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">418</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">132</span> Development of Manufacturing Simulation Model for Semiconductor Fabrication</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Syahril%20Ridzuan%20Ab%20Rahim">Syahril Ridzuan Ab Rahim</a>, <a href="https://publications.waset.org/search?q=Ibrahim%20Ahmad"> Ibrahim Ahmad</a>, <a href="https://publications.waset.org/search?q=Mohd%20Azizi%20Chik"> Mohd Azizi Chik</a>, <a href="https://publications.waset.org/search?q=Ahmad%20Zafir%20Md.%20Rejab"> Ahmad Zafir Md. Rejab</a>, <a href="https://publications.waset.org/search?q=and%0AU.%20Hashim"> and U. Hashim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This research presents the development of simulation modeling for WIP management in semiconductor fabrication. Manufacturing simulation modeling is needed for productivity optimization analysis due to the complex process flows involved more than 35 percent re-entrance processing steps more than 15 times at same equipment. Furthermore, semiconductor fabrication required to produce high product mixed with total processing steps varies from 300 to 800 steps and cycle time between 30 to 70 days. Besides the complexity, expansive wafer cost that potentially impact the company profits margin once miss due date is another motivation to explore options to experiment any analysis using simulation modeling. In this paper, the simulation model is developed using existing commercial software platform AutoSched AP, with customized integration with Manufacturing Execution Systems (MES) and Advanced Productivity Family (APF) for data collections used to configure the model parameters and data source. Model parameters such as processing steps cycle time, equipment performance, handling time, efficiency of operator are collected through this customization. Once the parameters are validated, few customizations are made to ensure the prior model is executed. The accuracy for the simulation model is validated with the actual output per day for all equipments. The comparison analysis from result of the simulation model compared to actual for achieved 95 percent accuracy for 30 days. This model later was used to perform various what if analysis to understand impacts on cycle time and overall output. By using this simulation model, complex manufacturing environment like semiconductor fabrication (fab) now have alternative source of validation for any new requirements impact analysis. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Advanced%20Productivity%20Family%20%28APF%29" title="Advanced Productivity Family (APF)">Advanced Productivity Family (APF)</a>, <a href="https://publications.waset.org/search?q=Complementary%20Metal%20Oxide%20Semiconductor%20%28CMOS%29" title=" Complementary Metal Oxide Semiconductor (CMOS)"> Complementary Metal Oxide Semiconductor (CMOS)</a>, <a href="https://publications.waset.org/search?q=Manufacturing%20Execution%20Systems%20%28MES%29" title=" Manufacturing Execution Systems (MES)"> Manufacturing Execution Systems (MES)</a>, <a href="https://publications.waset.org/search?q=Work%20In%20Progress%0A%28WIP%29." title=" Work In Progress (WIP)."> Work In Progress (WIP).</a> </p> <a href="https://publications.waset.org/10306/development-of-manufacturing-simulation-model-for-semiconductor-fabrication" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10306/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10306/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10306/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10306/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10306/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10306/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10306/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10306/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10306/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10306/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10306.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3218</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">131</span> Influence of Confined Acoustic Phonons on the Shubnikov – de Haas Magnetoresistance Oscillations in a Doped Semiconductor Superlattice</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Pham%20Ngoc%20Thang">Pham Ngoc Thang</a>, <a href="https://publications.waset.org/search?q=Le%20Thai%20Hung"> Le Thai Hung</a>, <a href="https://publications.waset.org/search?q=Nguyen%20Quang%20Bau"> Nguyen Quang Bau</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>The influence of confined acoustic phonons on the Shubnikov &ndash; de Haas magnetoresistance oscillations in a doped semiconductor superlattice (DSSL), subjected in a magnetic field, DC electric field, and a laser radiation, has been theoretically studied based on quantum kinetic equation method. The analytical expression for the magnetoresistance in a DSSL has been obtained as a function of external fields, DSSL parameters, and especially the quantum number <em>m</em> characterizing the effect of confined acoustic phonons. When <em>m</em> goes to zero, the results for bulk phonons in a DSSL could be achieved. Numerical calculations are also achieved for the <em>GaAs:Si/GaAs:Be </em>DSSL and compared with other studies. Results show that the Shubnikov &ndash; de Haas magnetoresistance oscillations amplitude decrease as the increasing of phonon confinement effect.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Shubnikov%E2%80%93de%20Haas%20magnetoresistance%20oscillations" title="Shubnikov–de Haas magnetoresistance oscillations">Shubnikov–de Haas magnetoresistance oscillations</a>, <a href="https://publications.waset.org/search?q=quantum%20kinetic%20equation" title=" quantum kinetic equation"> quantum kinetic equation</a>, <a href="https://publications.waset.org/search?q=confined%20acoustic%20phonons" title=" confined acoustic phonons"> confined acoustic phonons</a>, <a href="https://publications.waset.org/search?q=laser%20radiation" title=" laser radiation"> laser radiation</a>, <a href="https://publications.waset.org/search?q=doped%20semiconductor%20superlattices." title=" doped semiconductor superlattices. "> doped semiconductor superlattices. </a> </p> <a href="https://publications.waset.org/10007744/influence-of-confined-acoustic-phonons-on-the-shubnikov-de-haas-magnetoresistance-oscillations-in-a-doped-semiconductor-superlattice" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10007744/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10007744/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10007744/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10007744/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10007744/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10007744/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10007744/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10007744/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10007744/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10007744/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10007744.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1461</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">130</span> The Experience with SiC MOSFET and Buck Converter Snubber Design</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=P.%20Vaculik">P. Vaculik</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide &ndash; SiC. This material has exclusive features thanks to which it becomes a better switch than Si &ndash; silicon semiconductor switch. There are some special features that need to be understood to enable the device&rsquo;s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.&nbsp;</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=SiC" title="SiC">SiC</a>, <a href="https://publications.waset.org/search?q=Si" title=" Si"> Si</a>, <a href="https://publications.waset.org/search?q=MOSFET" title=" MOSFET"> MOSFET</a>, <a href="https://publications.waset.org/search?q=IGBT" title=" IGBT"> IGBT</a>, <a href="https://publications.waset.org/search?q=SBD" title=" SBD"> SBD</a>, <a href="https://publications.waset.org/search?q=RC%20snubber." title=" RC snubber. "> RC snubber. </a> </p> <a href="https://publications.waset.org/9997123/the-experience-with-sic-mosfet-and-buck-converter-snubber-design" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/9997123/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/9997123/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/9997123/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/9997123/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/9997123/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/9997123/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/9997123/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/9997123/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/9997123/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/9997123/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/9997123.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">5590</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">129</span> A Comparative Study of a Defective Superconductor/ Semiconductor-Dielectric Photonic Crystal</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=S.%20Sadegzadeh">S. Sadegzadeh</a>, <a href="https://publications.waset.org/search?q=A.%20Mousavi"> A. Mousavi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Temperature-dependent tunable photonic crystals have attracted widespread interest in recent years. In this research, transmission characteristics of a one-dimensional photonic crystal structure with a single defect have been studied. Here, we assume two different defect layers: InSb as a semiconducting layer and HgBa<sub>2</sub>Ca<sub>2</sub>Cu<sub>3</sub>O<sub>10</sub> as a high-temperature superconducting layer. Both the defect layers have temperature-dependent refractive indexes. Two different types of dielectric materials (Si as a high-refractive index dielectric and MgF<sub>2</sub> as a low-refractive index dielectric) are used to construct the asymmetric structures (Si/MgF<sub>2</sub>)<sup>N</sup>InSb(Si/MgF<sub>2</sub>)<sup>N</sup> named S.I, and (Si/MgF<sub>2</sub>)<sup>N</sup>HgBa<sub>2</sub>Ca<sub>2</sub>Cu<sub>3</sub>O<sub>10</sub>(Si/MgF<sub>2</sub>)<sup>N</sup> named S.II. It is found that in response to the temperature changes, transmission peaks within the photonic band gap of the S.II structure, in contrast to S.I, show a small wavelength shift. Furthermore, the results show that under the same conditions, S.I structure generates an extra defect mode in the transmission spectra. Besides high efficiency transmission property of S.II structure, it can be concluded that the semiconductor-dielectric photonic crystals are more sensitive to temperature variation than superconductor types. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Defect%20modes" title="Defect modes">Defect modes</a>, <a href="https://publications.waset.org/search?q=photonic%20crystals" title=" photonic crystals"> photonic crystals</a>, <a href="https://publications.waset.org/search?q=semiconductor" title=" semiconductor"> semiconductor</a>, <a href="https://publications.waset.org/search?q=superconductor" title=" superconductor"> superconductor</a>, <a href="https://publications.waset.org/search?q=transmission." title=" transmission."> transmission.</a> </p> <a href="https://publications.waset.org/10007371/a-comparative-study-of-a-defective-superconductor-semiconductor-dielectric-photonic-crystal" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10007371/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10007371/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10007371/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10007371/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10007371/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10007371/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10007371/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10007371/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10007371/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10007371/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10007371.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1252</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">128</span> Analysis of Nonlinear Pulse Propagation Characteristics in Semiconductor Optical Amplifier for Different Input Pulse Shapes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Suchi%20Barua">Suchi Barua</a>, <a href="https://publications.waset.org/search?q=Narottam%20Das"> Narottam Das</a>, <a href="https://publications.waset.org/search?q=Sven%20Nordholm"> Sven Nordholm</a>, <a href="https://publications.waset.org/search?q=Mohammad%20Razaghi"> Mohammad Razaghi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schr&ouml;dinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Finite-difference%20beam%20propagation%20method" title="Finite-difference beam propagation method">Finite-difference beam propagation method</a>, <a href="https://publications.waset.org/search?q=pulse%20shape" title=" pulse shape"> pulse shape</a>, <a href="https://publications.waset.org/search?q=pulse%20propagation" title=" pulse propagation"> pulse propagation</a>, <a href="https://publications.waset.org/search?q=semiconductor%20optical%20amplifier." title=" semiconductor optical amplifier."> semiconductor optical amplifier.</a> </p> <a href="https://publications.waset.org/10000235/analysis-of-nonlinear-pulse-propagation-characteristics-in-semiconductor-optical-amplifier-for-different-input-pulse-shapes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10000235/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10000235/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10000235/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10000235/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10000235/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10000235/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10000235/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10000235/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10000235/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10000235/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10000235.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2370</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">127</span> Application of Formyl-TIPPCu (II) for Temperature and Light Sensing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Dil%20Nawaz%20Khan">Dil Nawaz Khan</a>, <a href="https://publications.waset.org/search?q=M.%20H.%20Sayyad"> M. H. Sayyad</a>, <a href="https://publications.waset.org/search?q=Muhammad%20Yaseen"> Muhammad Yaseen</a>, <a href="https://publications.waset.org/search?q=Munawar%20Ali%20Munawar"> Munawar Ali Munawar</a>, <a href="https://publications.waset.org/search?q=Mukhtar%20Ali"> Mukhtar Ali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Effect of temperature and light was investigated on a thin film of organic semiconductor formyl-TIPPCu(II) deposited on a glass substrate with preliminary evaporated gold electrodes. The electrical capacitance and resistance of the fabricated device were evaluated under the effect of temperature and light. The relative capacitance of the fabricated sensor increased by 4.3 times by rising temperature from 27 to 1870C, while under illumination up to 25000 lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive sensor increased continuously by 13.2 times as compared to dark conditions. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=formyl-TIPPCu%28II%29" title="formyl-TIPPCu(II)">formyl-TIPPCu(II)</a>, <a href="https://publications.waset.org/search?q=Organic%20semiconductor" title=" Organic semiconductor"> Organic semiconductor</a>, <a href="https://publications.waset.org/search?q=Photocapacitance" title="Photocapacitance">Photocapacitance</a>, <a href="https://publications.waset.org/search?q=Polarizability." title=" Polarizability."> Polarizability.</a> </p> <a href="https://publications.waset.org/9573/application-of-formyl-tippcu-ii-for-temperature-and-light-sensing" class="btn btn-primary btn-sm">Procedia</a> <a 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