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Search results for: CMOS temperature sensor
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</div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: CMOS temperature sensor</h1> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3379</span> Temperature Sensor IC Design for Intracranial Monitoring Device</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Wai%20Pan%20Chan">Wai Pan Chan</a>, <a href="https://publications.waset.org/search?q=Minkyu%20Je"> Minkyu Je</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>A precision CMOS chopping amplifier is adopted in this work to improve a CMOS temperature sensor high sensitive enough for intracranial temperature monitoring. An amplified temperature sensitivity of 18.8 ± 3*0.2 mV/oC is attained over the temperature range from 20 oC to 80 oC from a given 10 samples of the same wafer. The analog frontend design outputs the temperature dependent and the temperature independent signals which can be directly interfaced to a 10 bit ADC to accomplish an accurate temperature instrumentation system.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Chopping" title="Chopping">Chopping</a>, <a href="https://publications.waset.org/search?q=analog%20frontend" title=" analog frontend"> analog frontend</a>, <a href="https://publications.waset.org/search?q=CMOS%20temperature%0D%0Asensor" title=" CMOS temperature sensor"> CMOS temperature sensor</a>, <a href="https://publications.waset.org/search?q=traumatic%20brain%20injury%20%28TBI%29" title=" traumatic brain injury (TBI)"> traumatic brain injury (TBI)</a>, <a href="https://publications.waset.org/search?q=intracranial%20temperature%0D%0Amonitoring." title=" intracranial temperature monitoring."> intracranial temperature monitoring.</a> </p> <a href="https://publications.waset.org/11560/temperature-sensor-ic-design-for-intracranial-monitoring-device" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/11560/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/11560/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/11560/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/11560/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/11560/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/11560/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/11560/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/11560/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/11560/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/11560/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/11560.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1979</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3378</span> A Single-chip Proportional to Absolute Temperature Sensor Using CMOS Technology</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=AL.AL">AL.AL</a>, <a href="https://publications.waset.org/search?q=M.%20B.%20I.%20Reaz"> M. B. I. Reaz</a>, <a href="https://publications.waset.org/search?q=S.%20M.%20A.%20Motakabber"> S. M. A. Motakabber</a>, <a href="https://publications.waset.org/search?q=Mohd%20Alauddin%20Mohd%20Ali"> Mohd Alauddin Mohd Ali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=PTAT" title="PTAT">PTAT</a>, <a href="https://publications.waset.org/search?q=single-chip%20circuit" title=" single-chip circuit"> single-chip circuit</a>, <a href="https://publications.waset.org/search?q=linear%20temperature%20sensor" title=" linear temperature sensor"> linear temperature sensor</a>, <a href="https://publications.waset.org/search?q=CMOS%20technology." title=" CMOS technology."> CMOS technology.</a> </p> <a href="https://publications.waset.org/6952/a-single-chip-proportional-to-absolute-temperature-sensor-using-cmos-technology" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/6952/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/6952/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/6952/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/6952/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/6952/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/6952/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/6952/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/6952/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/6952/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/6952/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/6952.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3431</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3377</span> Design and Characterization of a CMOS Process Sensor Utilizing Vth Extractor Circuit</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Rohana%20Musa">Rohana Musa</a>, <a href="https://publications.waset.org/search?q=Yuzman%20Yusoff"> Yuzman Yusoff</a>, <a href="https://publications.waset.org/search?q=Chia%20Chieu%20Yin"> Chia Chieu Yin</a>, <a href="https://publications.waset.org/search?q=Hanif%20Che%20Lah"> Hanif Che Lah</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (V<sub>th</sub>) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS%20Process%20sensor" title="CMOS Process sensor">CMOS Process sensor</a>, <a href="https://publications.waset.org/search?q=Process" title=" Process"> Process</a>, <a href="https://publications.waset.org/search?q=Voltage%20and%20Temperature%20%28PVT%29%20sensor" title=" Voltage and Temperature (PVT) sensor"> Voltage and Temperature (PVT) sensor</a>, <a href="https://publications.waset.org/search?q=threshold%20extractor%20circuit" title=" threshold extractor circuit"> threshold extractor circuit</a>, <a href="https://publications.waset.org/search?q=Vth%20extractor%20circuit." title=" Vth extractor circuit."> Vth extractor circuit.</a> </p> <a href="https://publications.waset.org/10011611/design-and-characterization-of-a-cmos-process-sensor-utilizing-vth-extractor-circuit" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10011611/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10011611/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10011611/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10011611/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10011611/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10011611/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10011611/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10011611/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10011611/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10011611/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10011611.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">754</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3376</span> Design of SiC Capacitive Pressure Sensor with LC-Based Oscillator Readout Circuit</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Azza%20M.%20Anis">Azza M. Anis</a>, <a href="https://publications.waset.org/search?q=M.%20M.%20Abutaleb"> M. M. Abutaleb</a>, <a href="https://publications.waset.org/search?q=Hani%20F.%20Ragai"> Hani F. Ragai</a>, <a href="https://publications.waset.org/search?q=M.%20I.%20Eladawy"> M. I. Eladawy</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS%20LC-based%20oscillator" title="CMOS LC-based oscillator">CMOS LC-based oscillator</a>, <a href="https://publications.waset.org/search?q=micro%20pressure%20sensor" title=" micro pressure sensor"> micro pressure sensor</a>, <a href="https://publications.waset.org/search?q=silicon%20carbide" title=" silicon carbide"> silicon carbide</a> </p> <a href="https://publications.waset.org/1496/design-of-sic-capacitive-pressure-sensor-with-lc-based-oscillator-readout-circuit" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/1496/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/1496/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/1496/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/1496/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/1496/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/1496/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/1496/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/1496/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/1496/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/1496/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/1496.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1669</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3375</span> Image Sensor Matrix High Speed Simulation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Z.%20Feng">Z. Feng</a>, <a href="https://publications.waset.org/search?q=V.%20Viswanathan"> V. Viswanathan</a>, <a href="https://publications.waset.org/search?q=D.%20Navarro"> D. Navarro</a>, <a href="https://publications.waset.org/search?q=I.%20O%27Connor"> I. O'Connor</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents a new high speed simulation methodology to solve the long simulation time problem of CMOS image sensor matrix. Generally, for integrating the pixel matrix in SOC and simulating the system performance, designers try to model the pixel in various modeling languages such as VHDL-AMS, SystemC or Matlab. We introduce a new alternative method based on spice model in cadence design platform to achieve accuracy and reduce simulation time. The simulation results indicate that the pixel output voltage maximum error is at 0.7812% and time consumption reduces from 2.2 days to 13 minutes achieving about 240X speed-up for the 256x256 pixel matrix.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS%20image%20sensor" title="CMOS image sensor">CMOS image sensor</a>, <a href="https://publications.waset.org/search?q=high%20speed%20simulation" title=" high speed simulation"> high speed simulation</a>, <a href="https://publications.waset.org/search?q=image%0D%0Asensor%20matrix%20simulation." title=" image sensor matrix simulation."> image sensor matrix simulation.</a> </p> <a href="https://publications.waset.org/6766/image-sensor-matrix-high-speed-simulation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/6766/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/6766/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/6766/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/6766/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/6766/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/6766/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/6766/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/6766/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/6766/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/6766/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/6766.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2013</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3374</span> A 1.8 V RF CMOS Active Inductor with 0.18 um CMOS Technology</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Siavash%20Heydarzadeh">Siavash Heydarzadeh</a>, <a href="https://publications.waset.org/search?q=Massoud%20Dousti"> Massoud Dousti</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS%20active%20inductor" title="CMOS active inductor ">CMOS active inductor </a>, <a href="https://publications.waset.org/search?q=0.18um%20CMOS%20technology" title=" 0.18um CMOS technology "> 0.18um CMOS technology </a>, <a href="https://publications.waset.org/search?q=ADS" title=" ADS"> ADS</a> </p> <a href="https://publications.waset.org/7310/a-18-v-rf-cmos-active-inductor-with-018-um-cmos-technology" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/7310/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/7310/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/7310/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/7310/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/7310/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/7310/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/7310/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/7310/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/7310/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/7310/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/7310.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3334</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3373</span> Measurement of Temperature, Humidity and Strain Variation Using Bragg Sensor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Amira%20Zrelli">Amira Zrelli</a>, <a href="https://publications.waset.org/search?q=Tahar%20Ezzeddine"> Tahar Ezzeddine</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Measurement and monitoring of temperature, humidity and strain variation are very requested in great fields and areas such as structural health monitoring (SHM) systems. Currently, the use of fiber Bragg grating sensors (FBGS) is very recommended in SHM systems due to the specifications of these sensors. In this paper, we present the theory of Bragg sensor, therefore we try to measure the efficient variation of strain, temperature and humidity (SV, ST, SH) using Bragg sensor. Thus, we can deduce the fundamental relation between these parameters and the wavelength of Bragg sensor. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Optical%20fiber" title="Optical fiber">Optical fiber</a>, <a href="https://publications.waset.org/search?q=strain" title=" strain"> strain</a>, <a href="https://publications.waset.org/search?q=temperature" title=" temperature"> temperature</a>, <a href="https://publications.waset.org/search?q=humidity" title=" humidity"> humidity</a>, <a href="https://publications.waset.org/search?q=measurement" title=" measurement"> measurement</a>, <a href="https://publications.waset.org/search?q=Bragg%20sensor" title=" Bragg sensor"> Bragg sensor</a>, <a href="https://publications.waset.org/search?q=SHM." title=" SHM."> SHM.</a> </p> <a href="https://publications.waset.org/10007063/measurement-of-temperature-humidity-and-strain-variation-using-bragg-sensor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10007063/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10007063/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10007063/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10007063/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10007063/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10007063/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10007063/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10007063/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10007063/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10007063/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10007063.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1140</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3372</span> High Speed and Ultra Low-voltage CMOS NAND and NOR Domino Gates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Yngvar%20Berg">Yngvar Berg</a>, <a href="https://publications.waset.org/search?q=Omid%20Mirmotahari"> Omid Mirmotahari</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>In this paper we ultra low-voltage and high speed CMOS domino logic. For supply voltages below 500mV the delay for a ultra low-voltage NAND2 gate is aproximately 10% of a complementary CMOS inverter. Furthermore, the delay variations due to mismatch is much less than for conventional CMOS. Differential domino gates for AND/NAND and OR/NOR operation are presented.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Low-voltage" title="Low-voltage">Low-voltage</a>, <a href="https://publications.waset.org/search?q=high-speed" title=" high-speed"> high-speed</a>, <a href="https://publications.waset.org/search?q=NAND" title=" NAND"> NAND</a>, <a href="https://publications.waset.org/search?q=NOR" title=" NOR"> NOR</a>, <a href="https://publications.waset.org/search?q=CMOS." title=" CMOS."> CMOS.</a> </p> <a href="https://publications.waset.org/852/high-speed-and-ultra-low-voltage-cmos-nand-and-nor-domino-gates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/852/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/852/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/852/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/852/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/852/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/852/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/852/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/852/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/852/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/852/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/852.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2553</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3371</span> An 8-Bit, 100-MSPS Fully Dynamic SAR ADC for Ultra-High Speed Image Sensor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=F.%20Rarbi">F. Rarbi</a>, <a href="https://publications.waset.org/search?q=D.%20Dzahini"> D. Dzahini</a>, <a href="https://publications.waset.org/search?q=W.%20Uhring"> W. Uhring</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>In this paper, a dynamic and power efficient 8-bit and 100-MSPS Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) is presented. The circuit uses a non-differential capacitive Digital-to-Analog (DAC) architecture segmented by 2. The prototype is produced in a commercial 65-nm 1P7M CMOS technology with 1.2-V supply voltage. The size of the core ADC is 208.6 x 103.6 µm<sup>2</sup>. The post-layout noise simulation results feature a SNR of 46.9 dB at Nyquist frequency, which means an effective number of bit (ENOB) of 7.5-b. The total power consumption of this SAR ADC is only 1.55 mW at 100-MSPS. It achieves then a figure of merit of 85.6 fJ/step.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS%20analog%20to%20digital%20converter" title="CMOS analog to digital converter">CMOS analog to digital converter</a>, <a href="https://publications.waset.org/search?q=dynamic%20comparator" title=" dynamic comparator"> dynamic comparator</a>, <a href="https://publications.waset.org/search?q=image%20sensor%20application" title=" image sensor application"> image sensor application</a>, <a href="https://publications.waset.org/search?q=successive%20approximation%20register." title=" successive approximation register. "> successive approximation register. </a> </p> <a href="https://publications.waset.org/10008348/an-8-bit-100-msps-fully-dynamic-sar-adc-for-ultra-high-speed-image-sensor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10008348/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10008348/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10008348/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10008348/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10008348/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10008348/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10008348/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10008348/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10008348/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10008348/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10008348.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1303</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3370</span> A Micro-Watt Second Order Filter for a Chopper Stabilized MEMS Pressure Sensor Interface</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Arup%20K.%20George">Arup K. George</a>, <a href="https://publications.waset.org/search?q=Wai%20Pan%20Chan"> Wai Pan Chan</a>, <a href="https://publications.waset.org/search?q=Zhi%20Hui%20Kong"> Zhi Hui Kong</a>, <a href="https://publications.waset.org/search?q=Minkyu%20Je"> Minkyu Je</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper describes a low-power second-order filter for a continuous-time chopper stabilized capacitive sensor interface, integrated with a fully differential post-CMOS surface-micromachined MEMS pressure sensor. The circuit uses a single-ended folded-cascode operational amplifier and two GM-C filters connected in cascade. The circuit is realized in a 0.18 μm CMOS process and offers differential to single-ended conversion. The novelty of the scheme is the cascade of two GM-C filters to achieve a second-order filter while minimizing power dissipation. The simulated filter cutoff frequency is 1.14 kHz at common-mode voltage 1.65 V, operating from a 3.3 V supply while dissipating 172μW of power. The filter achieves an operating range of 1V for an output load of 1MOhm and 10pF. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Chopper%20Stabilization" title="Chopper Stabilization">Chopper Stabilization</a>, <a href="https://publications.waset.org/search?q=MEMS" title=" MEMS"> MEMS</a>, <a href="https://publications.waset.org/search?q=Pressure%20Sensors" title=" Pressure Sensors"> Pressure Sensors</a>, <a href="https://publications.waset.org/search?q=Low%20Pass%20Filter" title=" Low Pass Filter"> Low Pass Filter</a> </p> <a href="https://publications.waset.org/13840/a-micro-watt-second-order-filter-for-a-chopper-stabilized-mems-pressure-sensor-interface" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/13840/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/13840/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/13840/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/13840/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/13840/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/13840/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/13840/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/13840/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/13840/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/13840/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/13840.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2103</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3369</span> Current Starved Ring Oscillator Image Sensor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Devin%20Atkin">Devin Atkin</a>, <a href="https://publications.waset.org/search?q=Orly%20Yadid-Pecht"> Orly Yadid-Pecht</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>The continual demands for increasing resolution and dynamic range in complimentary metal-oxide semiconductor (CMOS) image sensors have resulted in exponential increases in the amount of data that need to be read out of an image sensor, and existing readouts cannot keep up with this demand. Interesting approaches such as sparse and burst readouts have been proposed and show promise, but at considerable trade-offs in other specifications. To this end, we have begun designing and evaluating various readout topologies centered around an attempt to parallelize the sensor readout. In this paper, we have designed, simulated, and started testing a light-controlled oscillator topology with dual column and row readouts. We expect the parallel readout structure to offer greater speed and alleviate the trade-off typical in this topology, where slow pixels present a major framerate bottleneck.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS%20image%20sensors" title="CMOS image sensors">CMOS image sensors</a>, <a href="https://publications.waset.org/search?q=high-speed%20capture" title=" high-speed capture"> high-speed capture</a>, <a href="https://publications.waset.org/search?q=wide%20dynamic%20range" title=" wide dynamic range"> wide dynamic range</a>, <a href="https://publications.waset.org/search?q=light%20controlled%20oscillator." title=" light controlled oscillator."> light controlled oscillator.</a> </p> <a href="https://publications.waset.org/10013512/current-starved-ring-oscillator-image-sensor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10013512/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10013512/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10013512/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10013512/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10013512/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10013512/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10013512/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10013512/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10013512/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10013512/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10013512.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">185</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3368</span> An Efficient Digital Baseband ASIC for Wireless Biomedical Signals Monitoring</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Kah-Hyong%20Chang">Kah-Hyong Chang</a>, <a href="https://publications.waset.org/search?q=Xin%20Liu"> Xin Liu</a>, <a href="https://publications.waset.org/search?q=Jia%20Hao%20Cheong"> Jia Hao Cheong</a>, <a href="https://publications.waset.org/search?q=Saisundar%20Sankaranarayanan"> Saisundar Sankaranarayanan</a>, <a href="https://publications.waset.org/search?q=Dexing%20Pang"> Dexing Pang</a>, <a href="https://publications.waset.org/search?q=Hongzhao%20Zheng"> Hongzhao Zheng</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A digital baseband Application-Specific Integrated Circuit (ASIC) (yclic Redundancy Checkis developed for a microchip transponder to transmit signals and temperature levels from biomedical monitoring devices. The transmission protocol is adapted from the ISO/IEC 11784/85 standard. The module has a decimation filter that employs only a single adder-subtractor in its datapath. The filtered output is coded with cyclic redundancy check and transmitted through backscattering Load Shift Keying (LSK) modulation to a reader. Fabricated using the 0.18-μm CMOS technology, the module occupies 0.116 mm<sup>2</sup> in chip area (digital baseband: 0.060 mm<sup>2</sup>, decimation filter: 0.056 mm<sup>2</sup>), and consumes a total of less than 0.9 μW of power (digital baseband: 0.75 μW, decimation filter: 0.14 μW). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Biomedical%20sensor" title="Biomedical sensor">Biomedical sensor</a>, <a href="https://publications.waset.org/search?q=decimation%20filter" title=" decimation filter"> decimation filter</a>, <a href="https://publications.waset.org/search?q=Radio%20Frequency%20Integrated%20Circuit%20%28RFIC%29%20baseband" title=" Radio Frequency Integrated Circuit (RFIC) baseband"> Radio Frequency Integrated Circuit (RFIC) baseband</a>, <a href="https://publications.waset.org/search?q=temperature%20sensor." title=" temperature sensor."> temperature sensor.</a> </p> <a href="https://publications.waset.org/10003804/an-efficient-digital-baseband-asic-for-wireless-biomedical-signals-monitoring" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10003804/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10003804/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10003804/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10003804/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10003804/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10003804/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10003804/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10003804/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10003804/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10003804/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10003804.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1616</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3367</span> A Sub-mW Low Noise Amplifier for Wireless Sensor Networks</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Gianluca%20Cornetta">Gianluca Cornetta</a>, <a href="https://publications.waset.org/search?q=David%20J.%20Santos"> David J. Santos</a>, <a href="https://publications.waset.org/search?q=Balwant%20Godara"> Balwant Godara</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Current%20Reuse" title="Current Reuse">Current Reuse</a>, <a href="https://publications.waset.org/search?q=IEEE%20802.15.4%20%28ZigBee%29" title=" IEEE 802.15.4 (ZigBee)"> IEEE 802.15.4 (ZigBee)</a>, <a href="https://publications.waset.org/search?q=Low%20NoiseAmplifiers" title=" Low NoiseAmplifiers"> Low NoiseAmplifiers</a>, <a href="https://publications.waset.org/search?q=Wireless%20Sensor%20Networks." title=" Wireless Sensor Networks."> Wireless Sensor Networks.</a> </p> <a href="https://publications.waset.org/14102/a-sub-mw-low-noise-amplifier-for-wireless-sensor-networks" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/14102/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/14102/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/14102/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/14102/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/14102/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/14102/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/14102/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/14102/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/14102/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/14102/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/14102.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1813</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3366</span> Integration of CMOS Biosensor into a Polymeric Lab-on-a-Chip System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=T.%20Brettschneider"> T. Brettschneider</a>, <a href="https://publications.waset.org/search?q=C.%20Dorrer"> C. Dorrer</a>, <a href="https://publications.waset.org/search?q=H.%20Suy"> H. Suy</a>, <a href="https://publications.waset.org/search?q=T.%20Braun"> T. Braun</a>, <a href="https://publications.waset.org/search?q=E.%20Jung"> E. Jung</a>, <a href="https://publications.waset.org/search?q=R.%20Hoofman"> R. Hoofman</a>, <a href="https://publications.waset.org/search?q=M.%20Br%C3%BCndel"> M. Bründel</a>, <a href="https://publications.waset.org/search?q=R.%20Zengerle"> R. Zengerle</a>, <a href="https://publications.waset.org/search?q=F.%20L%C3%A4rmer"> F. Lärmer</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>We present an integration approach of a CMOS biosensor into a polymer based microfluidic environment suitable for mass production. It consists of a wafer-level-package for the silicon die and laser bonding process promoted by an intermediate hot melt foil to attach the sensor package to the microfluidic chip, without the need for dispensing of glues or underfiller. A very good condition of the sensing area was obtained after introducing a protection layer during packaging. A microfluidic flow cell was fabricated and shown to withstand pressures up to Δp = 780 kPa without leakage. The employed biosensors were electrically characterized in a dry environment.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS%20biosensor" title=" CMOS biosensor"> CMOS biosensor</a>, <a href="https://publications.waset.org/search?q=laser%20bonding" title=" laser bonding"> laser bonding</a>, <a href="https://publications.waset.org/search?q=silicon%20polymer%20integration" title=" silicon polymer integration"> silicon polymer integration</a>, <a href="https://publications.waset.org/search?q=wafer%20level%20packaging." title=" wafer level packaging."> wafer level packaging.</a> </p> <a href="https://publications.waset.org/16087/integration-of-cmos-biosensor-into-a-polymeric-lab-on-a-chip-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/16087/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/16087/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/16087/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/16087/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/16087/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/16087/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/16087/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/16087/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/16087/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/16087/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/16087.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3029</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3365</span> A Smart-Visio Microphone for Audio-Visual Speech Recognition “Vmike“ </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Y.%20Ni">Y. Ni</a>, <a href="https://publications.waset.org/search?q=K.%20Sebri"> K. Sebri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>The practical implementation of audio-video coupled speech recognition systems is mainly limited by the hardware complexity to integrate two radically different information capturing devices with good temporal synchronisation. In this paper, we propose a solution based on a smart CMOS image sensor in order to simplify the hardware integration difficulties. By using on-chip image processing, this smart sensor can calculate in real time the X/Y projections of the captured image. This on-chip projection reduces considerably the volume of the output data. This data-volume reduction permits a transmission of the condensed visual information via the same audio channel by using a stereophonic input available on most of the standard computation devices such as PC, PDA and mobile phones. A prototype called VMIKE (Visio-Microphone) has been designed and realised by using standard 0.35um CMOS technology. A preliminary experiment gives encouraged results. Its efficiency will be further investigated in a large variety of applications such as biometrics, speech recognition in noisy environments, and vocal control for military or disabled persons, etc.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Audio-Visual%20Speech%20recognition" title="Audio-Visual Speech recognition">Audio-Visual Speech recognition</a>, <a href="https://publications.waset.org/search?q=CMOS%20Smartsensor" title=" CMOS Smartsensor"> CMOS Smartsensor</a>, <a href="https://publications.waset.org/search?q=On-Chip%20image%20processing." title=" On-Chip image processing."> On-Chip image processing.</a> </p> <a href="https://publications.waset.org/6893/a-smart-visio-microphone-for-audio-visual-speech-recognition-vmike" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/6893/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/6893/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/6893/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/6893/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/6893/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/6893/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/6893/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/6893/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/6893/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/6893/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/6893.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1826</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3364</span> A Nobel Approach for Campus Monitoring</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Rashmi%20Priyadarshini">Rashmi Priyadarshini</a>, <a href="https://publications.waset.org/search?q=S.%20R.%20N.%20Reddy"> S. R. N. Reddy</a>, <a href="https://publications.waset.org/search?q=R.%20M.%20Mehra"> R. M. Mehra</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents one of the best applications of wireless sensor network for campus Monitoring. With the help of PIR sensor, temperature sensor and humidity sensor, effective utilization of energy resources has been implemented in one of rooms of Sharda University, Greater Noida, India. The RISC microcontroller is used here for analysis of output of sensors and providing proper control using ZigBee protocol. This wireless sensor module presents a tremendous power saving method for any campus</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=PIC%20microcontroller" title="PIC microcontroller">PIC microcontroller</a>, <a href="https://publications.waset.org/search?q=wireless%20sensor%20network" title=" wireless sensor network"> wireless sensor network</a>, <a href="https://publications.waset.org/search?q=ZigBee." title=" ZigBee."> ZigBee.</a> </p> <a href="https://publications.waset.org/2255/a-nobel-approach-for-campus-monitoring" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/2255/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/2255/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/2255/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/2255/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/2255/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/2255/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/2255/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/2255/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/2255/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/2255/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/2255.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1789</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3363</span> Design of a CMOS Differential Operational Transresistance Amplifier in 90 nm CMOS Technology</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Hafiz%20Muhammad%20Obaid">Hafiz Muhammad Obaid</a>, <a href="https://publications.waset.org/search?q=Umais%20Tayyab"> Umais Tayyab</a>, <a href="https://publications.waset.org/search?q=Shabbir%20Majeed%20Ch."> Shabbir Majeed Ch.</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=CMOS" title="CMOS">CMOS</a>, <a href="https://publications.waset.org/search?q=differential" title=" differential"> differential</a>, <a href="https://publications.waset.org/search?q=operational%20transresistance%20amplifier" title=" operational transresistance amplifier"> operational transresistance amplifier</a>, <a href="https://publications.waset.org/search?q=OTRA" title=" OTRA"> OTRA</a>, <a href="https://publications.waset.org/search?q=90%20nm" title=" 90 nm"> 90 nm</a>, <a href="https://publications.waset.org/search?q=VLSI." title=" VLSI. "> VLSI. </a> </p> <a href="https://publications.waset.org/10007961/design-of-a-cmos-differential-operational-transresistance-amplifier-in-90-nm-cmos-technology" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10007961/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10007961/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10007961/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10007961/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10007961/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10007961/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10007961/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10007961/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10007961/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10007961/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10007961.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1138</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3362</span> Algorithm Design and Performance Evaluation of Equivalent CMOS Model</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Parvinder%20S.%20Sandhu">Parvinder S. Sandhu</a>, <a href="https://publications.waset.org/search?q=Iqbaldeep%20Kaur"> Iqbaldeep Kaur</a>, <a href="https://publications.waset.org/search?q=Amit%20Verma"> Amit Verma</a>, <a href="https://publications.waset.org/search?q=Inderpreet%20Kaur"> Inderpreet Kaur</a>, <a href="https://publications.waset.org/search?q=Birinderjit%20S.%20Kalyan"> Birinderjit S. Kalyan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work is a proposed model of CMOS for which the algorithm has been created and then the performance evaluation of this proposition has been done. In this context, another commonly used model called ZSTT (Zero Switching Time Transient) model is chosen to compare all the vital features and the results for the Proposed Equivalent CMOS are promising. In the end, the excerpts of the created algorithm are also included <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Dual%20Capacitor%20Model" title="Dual Capacitor Model">Dual Capacitor Model</a>, <a href="https://publications.waset.org/search?q=ZSTT" title=" ZSTT"> ZSTT</a>, <a href="https://publications.waset.org/search?q=CMOS" title=" CMOS"> CMOS</a>, <a href="https://publications.waset.org/search?q=SPICEMacro-Model." title=" SPICEMacro-Model."> SPICEMacro-Model.</a> </p> <a href="https://publications.waset.org/14943/algorithm-design-and-performance-evaluation-of-equivalent-cmos-model" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/14943/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/14943/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/14943/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/14943/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/14943/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/14943/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/14943/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/14943/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/14943/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/14943/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/14943.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1331</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3361</span> A Capacitive Sensor Interface Circuit Based on Phase Differential Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=H.%20A.%20Majid">H. A. Majid</a>, <a href="https://publications.waset.org/search?q=N.%20Razali"> N. Razali</a>, <a href="https://publications.waset.org/search?q=M.%20S.%20Sulaiman"> M. S. Sulaiman</a>, <a href="https://publications.waset.org/search?q=A.%20K.%20A%27ain"> A. K. A'ain</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A new interface circuit for capacitive sensor is presented. This paper presents the design and simulation of soil moisture capacitive sensor interface circuit based on phase differential technique. The circuit has been designed and fabricated using MIMOS- 0.35"m CMOS technology. Simulation and test results show linear characteristic from 36 – 52 degree phase difference, representing 0 – 100% in soil moisture level. Test result shows the circuit has sensitivity of 0.79mV/0.10 phase difference, translating into resolution of 10% soil moisture level. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Capacitive%20sensor" title="Capacitive sensor">Capacitive sensor</a>, <a href="https://publications.waset.org/search?q=interface" title=" interface"> interface</a>, <a href="https://publications.waset.org/search?q=phase%20differential." title=" phase differential."> phase differential.</a> </p> <a href="https://publications.waset.org/10448/a-capacitive-sensor-interface-circuit-based-on-phase-differential-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10448/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10448/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10448/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10448/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10448/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10448/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10448/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10448/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10448/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10448/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10448.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3422</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3360</span> Versatile Dual-Mode Class-AB Four-Quadrant Analog Multiplier</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Montree%20Kumngern">Montree Kumngern</a>, <a href="https://publications.waset.org/search?q=Kobchai%20Dejhan"> Kobchai Dejhan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Versatile dual-mode class-AB CMOS four-quadrant analog multiplier circuit is presented. The dual translinear loops and current mirrors are the basic building blocks in realization scheme. This technique provides; wide dynamic range, wide-bandwidth response and low power consumption. The major advantages of this approach are; its has single ended inputs; since its input is dual translinear loop operate in class-AB mode which make this multiplier configuration interesting for low-power applications; current multiplying, voltage multiplying, or current and voltage multiplying can be obtainable with balanced input. The simulation results of versatile analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth of about 19MHz, a maximum power consumption of 0.46mW, and temperature compensated. Operation of versatile analog multiplier was also confirmed through an experiment using CMOS transistor array. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Class-AB" title="Class-AB">Class-AB</a>, <a href="https://publications.waset.org/search?q=dual-mode%20CMOS%20analog%20multiplier" title=" dual-mode CMOS analog multiplier"> dual-mode CMOS analog multiplier</a>, <a href="https://publications.waset.org/search?q=CMOS%20analog%20integrated%20circuit" title="CMOS analog integrated circuit">CMOS analog integrated circuit</a>, <a href="https://publications.waset.org/search?q=CMOS%20translinear%20integrated%20circuit." title=" CMOS translinear integrated circuit."> CMOS translinear integrated circuit.</a> </p> <a href="https://publications.waset.org/401/versatile-dual-mode-class-ab-four-quadrant-analog-multiplier" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/401/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/401/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/401/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/401/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/401/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/401/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/401/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/401/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/401/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/401/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/401.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2286</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3359</span> LFSR Counter Implementation in CMOS VLSI</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Doshi%20N.%20A.">Doshi N. A.</a>, <a href="https://publications.waset.org/search?q=Dhobale%20S.%20B."> Dhobale S. B.</a>, <a href="https://publications.waset.org/search?q=Kakade%20S.%20R."> Kakade S. R.</a> </p> <p class="card-text"><strong>Abstract:</strong></p> As chip manufacturing technology is suddenly on the threshold of major evaluation, which shrinks chip in size and performance, LFSR (Linear Feedback Shift Register) is implemented in layout level which develops the low power consumption chip, using recent CMOS, sub-micrometer layout tools. Thus LFSR counter can be a new trend setter in cryptography and is also beneficial as compared to GRAY & BINARY counter and variety of other applications. This paper compares 3 architectures in terms of the hardware implementation, CMOS layout and power consumption, using Microwind CMOS layout tool. Thus it provides solution to a low power architecture implementation of LFSR in CMOS VLSI. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Chip%20technology" title="Chip technology">Chip technology</a>, <a href="https://publications.waset.org/search?q=Layout%20level" title=" Layout level"> Layout level</a>, <a href="https://publications.waset.org/search?q=LFSR" title=" LFSR"> LFSR</a>, <a href="https://publications.waset.org/search?q=Pass%20transistor" title=" Pass transistor"> Pass transistor</a> </p> <a href="https://publications.waset.org/4463/lfsr-counter-implementation-in-cmos-vlsi" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/4463/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/4463/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/4463/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/4463/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/4463/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/4463/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/4463/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/4463/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/4463/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/4463/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/4463.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">4513</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3358</span> Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=N.%20Shen">N. Shen</a>, <a href="https://publications.waset.org/search?q=Z.%20X.%20Chen"> Z. X. Chen</a>, <a href="https://publications.waset.org/search?q=K.D.%20Buddharaju"> K.D. Buddharaju</a>, <a href="https://publications.waset.org/search?q=H.%20M.%20Chua"> H. M. Chua</a>, <a href="https://publications.waset.org/search?q=X.%20Li"> X. Li</a>, <a href="https://publications.waset.org/search?q=N.%20Singh"> N. Singh</a>, <a href="https://publications.waset.org/search?q=G.Q%20Lo"> G.Q Lo</a>, <a href="https://publications.waset.org/search?q=D.-L.%20Kwong"> D.-L. Kwong</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Gate-all-around" title="Gate-all-around">Gate-all-around</a>, <a href="https://publications.waset.org/search?q=temperature%20dependence" title=" temperature dependence"> temperature dependence</a>, <a href="https://publications.waset.org/search?q=silicon%20nanowire" title=" silicon nanowire"> silicon nanowire</a> </p> <a href="https://publications.waset.org/8846/vertical-gaa-silicon-nanowire-transistor-with-impact-of-temperature-on-device-parameters" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/8846/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/8846/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/8846/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/8846/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/8846/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/8846/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/8846/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/8846/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/8846/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/8846/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/8846.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1852</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3357</span> Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Yuzman%20Yusoff">Yuzman Yusoff</a>, <a href="https://publications.waset.org/search?q=Siti%20Noor%20Harun"> Siti Noor Harun</a>, <a href="https://publications.waset.org/search?q=Noor%20Shelida%20Sallehand%20Tan%20Kong%20Yew"> Noor Shelida Sallehand Tan Kong Yew</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Readout%20interface%20circuit%20%28ROIC%29" title="Readout interface circuit (ROIC)">Readout interface circuit (ROIC)</a>, <a href="https://publications.waset.org/search?q=analog%20interface%20circuit" title=" analog interface circuit"> analog interface circuit</a>, <a href="https://publications.waset.org/search?q=ion%20sensitive%20field%20effect%20transistor%20%28ISFET%29" title=" ion sensitive field effect transistor (ISFET)"> ion sensitive field effect transistor (ISFET)</a>, <a href="https://publications.waset.org/search?q=ion%20selective%20electrode%20%28ISE%29" title=" ion selective electrode (ISE)"> ion selective electrode (ISE)</a>, <a href="https://publications.waset.org/search?q=and%20ion%20sensor%20electronics." title=" and ion sensor electronics."> and ion sensor electronics.</a> </p> <a href="https://publications.waset.org/17148/design-and-characterization-of-cmos-readout-circuit-for-isfet-and-ise-based-sensors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/17148/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/17148/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/17148/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/17148/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/17148/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/17148/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/17148/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/17148/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/17148/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/17148/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/17148.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2653</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3356</span> Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Yuzman%20Yusoff">Yuzman Yusoff</a>, <a href="https://publications.waset.org/search?q=Siti%20Noor%20Harun"> Siti Noor Harun</a>, <a href="https://publications.waset.org/search?q=Noor%20Shelida%20Sallehand"> Noor Shelida Sallehand</a>, <a href="https://publications.waset.org/search?q=Tan%20Kong%20Yew"> Tan Kong Yew</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 Rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Readout%20interface%20circuit%20%28ROIC%29" title="Readout interface circuit (ROIC)">Readout interface circuit (ROIC)</a>, <a href="https://publications.waset.org/search?q=analog%20interface%0D%0Acircuit" title=" analog interface circuit"> analog interface circuit</a>, <a href="https://publications.waset.org/search?q=ion%20sensitive%20field%20effect%20transistor%20%28ISFET%29" title=" ion sensitive field effect transistor (ISFET)"> ion sensitive field effect transistor (ISFET)</a>, <a href="https://publications.waset.org/search?q=ion%20selective%0D%0Aelectrode%20%28ISE%29" title=" ion selective electrode (ISE)"> ion selective electrode (ISE)</a>, <a href="https://publications.waset.org/search?q=ion%20sensor%20electronics." title=" ion sensor electronics."> ion sensor electronics.</a> </p> <a href="https://publications.waset.org/10001593/design-and-characterization-of-cmos-readout-circuit-for-isfet-and-ise-based-sensors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10001593/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10001593/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10001593/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10001593/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10001593/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10001593/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10001593/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10001593/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10001593/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10001593/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10001593.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2064</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3355</span> A Floating Gate MOSFET Based Novel Programmable Current Reference</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=V.%20Suresh%20Babu">V. Suresh Babu</a>, <a href="https://publications.waset.org/search?q=Haseena%20P.%20S."> Haseena P. S.</a>, <a href="https://publications.waset.org/search?q=Varun%20P.%20Gopi"> Varun P. Gopi</a>, <a href="https://publications.waset.org/search?q=M.%20R.%20Baiju"> M. R. Baiju</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>In this paper a scheme is proposed for generating a programmable current reference which can be implemented in the CMOS technology. The current can be varied over a wide range by changing an external voltage applied to one of the control gates of FGMOS (Floating Gate MOSFET). For a range of supply voltages and temperature, CMOS current reference is found to be dependent, this dependence is compensated by subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is found to improve with the use of FGMOS. Mathematical analysis of the proposed circuit is done to establish supply voltage and temperature independence. Simulation and performance evaluation of the proposed current reference circuit is done using TANNER EDA Tools. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The proposed current reference can operate down to 0.9 V supply.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Floating%20Gate%20MOSFET" title="Floating Gate MOSFET">Floating Gate MOSFET</a>, <a href="https://publications.waset.org/search?q=current%20reference" title=" current reference"> current reference</a>, <a href="https://publications.waset.org/search?q=self%0D%0Abias%20scheme" title=" self bias scheme"> self bias scheme</a>, <a href="https://publications.waset.org/search?q=temperature%20independency" title=" temperature independency"> temperature independency</a>, <a href="https://publications.waset.org/search?q=supply%20voltage%0D%0Aindependency." title=" supply voltage independency."> supply voltage independency.</a> </p> <a href="https://publications.waset.org/9999857/a-floating-gate-mosfet-based-novel-programmable-current-reference" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/9999857/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/9999857/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/9999857/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/9999857/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/9999857/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/9999857/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/9999857/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/9999857/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/9999857/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/9999857/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/9999857.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1801</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3354</span> The Design of PFM Mode DC-DC Converter with DT-CMOS Switch</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Jae-Chang%20Kwak">Jae-Chang Kwak</a>, <a href="https://publications.waset.org/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=DT-CMOS" title="DT-CMOS">DT-CMOS</a>, <a href="https://publications.waset.org/search?q=PMIC" title=" PMIC"> PMIC</a>, <a href="https://publications.waset.org/search?q=PFM" title=" PFM"> PFM</a>, <a href="https://publications.waset.org/search?q=DC-DC%20converter." title=" DC-DC converter."> DC-DC converter.</a> </p> <a href="https://publications.waset.org/9999074/the-design-of-pfm-mode-dc-dc-converter-with-dt-cmos-switch" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/9999074/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/9999074/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/9999074/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/9999074/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/9999074/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/9999074/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/9999074/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/9999074/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/9999074/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/9999074/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/9999074.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">3203</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3353</span> High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=J.%20H.%20Choi">J. H. Choi</a>, <a href="https://publications.waset.org/search?q=S.%20J.%20Kim"> S. J. Kim</a>, <a href="https://publications.waset.org/search?q=M.%20S.%20Jung"> M. S. Jung</a>, <a href="https://publications.waset.org/search?q=S.%20J.%20Kim"> S. J. Kim</a>, <a href="https://publications.waset.org/search?q=S.%20J.%20Joo"> S. J. Joo</a>, <a href="https://publications.waset.org/search?q=S.%20C.%20Kim"> S. C. Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=High%20temperature" title="High temperature">High temperature</a>, <a href="https://publications.waset.org/search?q=hydrogen%20sensor" title=" hydrogen sensor"> hydrogen sensor</a>, <a href="https://publications.waset.org/search?q=SiC" title=" SiC"> SiC</a>, <a href="https://publications.waset.org/search?q=Ta2O5%20dielectric%20layer." title=" Ta2O5 dielectric layer."> Ta2O5 dielectric layer.</a> </p> <a href="https://publications.waset.org/10844/high-temperature-hydrogen-sensors-based-on-pdta2o5sic-mos-capacitor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10844/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10844/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10844/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10844/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10844/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10844/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10844/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10844/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10844/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10844/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10844.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2069</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3352</span> Optimization of Thermopile Sensor Performance of Polycrystalline Silicon Film</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Li%20Long">Li Long</a>, <a href="https://publications.waset.org/search?q=Thomas%20Ortlepp"> Thomas Ortlepp</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>A theoretical model for the optimization of thermopile sensor performance is developed for thermoelectric-based infrared radiation detection. It is shown that the performance of polycrystalline silicon film thermopile sensor can be optimized according to the thermoelectric quality factor, sensor layer structure factor and sensor layout shape factor. Based on the properties of electrons, phonons, grain boundaries and their interactions, the thermoelectric quality factor of polycrystalline silicon is analyzed with the relaxation time approximation of Boltzmann transport equation. The model includes the effects of grain structure, grain boundary trap properties and doping concentration. The layer structure factor of sensor is analyzed with respect to infrared absorption coefficient. The effect of layout design is characterized with the shape factor, which is calculated for different sensor designs. Double layer polycrystalline silicon thermopile infrared sensors on suspended support membrane have been designed and fabricated with a CMOS-compatible process. The theoretical approach is confirmed with measurement results.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Polycrystalline%20silicon%20film" title="Polycrystalline silicon film">Polycrystalline silicon film</a>, <a href="https://publications.waset.org/search?q=relaxation%20time%0D%0Aapproximation" title=" relaxation time approximation"> relaxation time approximation</a>, <a href="https://publications.waset.org/search?q=specific%20detectivity" title=" specific detectivity"> specific detectivity</a>, <a href="https://publications.waset.org/search?q=thermal%20conductivity" title=" thermal conductivity"> thermal conductivity</a>, <a href="https://publications.waset.org/search?q=thermopile%0D%0Ainfrared%20sensor." title=" thermopile infrared sensor."> thermopile infrared sensor.</a> </p> <a href="https://publications.waset.org/10013161/optimization-of-thermopile-sensor-performance-of-polycrystalline-silicon-film" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10013161/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10013161/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10013161/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10013161/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10013161/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10013161/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10013161/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10013161/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10013161/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10013161/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10013161.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">231</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3351</span> Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Hassan%20Jassim%20Motlak">Hassan Jassim Motlak</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to the symmetrical input stage. P-Spice simulation results are obtained using 0.18μm MIETEC CMOS process parameters and supply voltage of ±1.2V, 50μA biasing current. The p-spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, openloop gain bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/μS, THD of -63dB and DC consumption power (PC) of 2mW.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Pseudo-OTA%20used%20CMOS%20CFOA" title="Pseudo-OTA used CMOS CFOA">Pseudo-OTA used CMOS CFOA</a>, <a href="https://publications.waset.org/search?q=low%20power%20CFOA" title=" low power CFOA"> low power CFOA</a>, <a href="https://publications.waset.org/search?q=high-performance%20CFOA" title=" high-performance CFOA"> high-performance CFOA</a>, <a href="https://publications.waset.org/search?q=novel%20CFOA." title=" novel CFOA."> novel CFOA.</a> </p> <a href="https://publications.waset.org/10001668/design-of-cmos-cfoa-based-on-pseudo-operational-transconductance-amplifier" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/10001668/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/10001668/bibtex" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">BibTeX</a> <a href="https://publications.waset.org/10001668/chicago" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Chicago</a> <a href="https://publications.waset.org/10001668/endnote" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">EndNote</a> <a href="https://publications.waset.org/10001668/harvard" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">Harvard</a> <a href="https://publications.waset.org/10001668/json" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">JSON</a> <a href="https://publications.waset.org/10001668/mla" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">MLA</a> <a href="https://publications.waset.org/10001668/ris" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">RIS</a> <a href="https://publications.waset.org/10001668/xml" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">XML</a> <a href="https://publications.waset.org/10001668/iso690" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">ISO 690</a> <a href="https://publications.waset.org/10001668.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">2851</span> </span> </div> </div> <div class="card publication-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3350</span> Current Mode Logic Circuits for 10-bit 5GHz High Speed Digital to Analog Converter </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/search?q=Zhenguo%20Vincent%20Chia">Zhenguo Vincent Chia</a>, <a href="https://publications.waset.org/search?q=Sheung%20Yan%20Simon%20Ng"> Sheung Yan Simon Ng</a>, <a href="https://publications.waset.org/search?q=Minkyu%20Je"> Minkyu Je</a> </p> <p class="card-text"><strong>Abstract:</strong></p> <p>This paper presents CMOS Current Mode Logic (CML) circuits for a high speed Digital to Analog Converter (DAC) using standard CMOS 65nm process. The CML circuits have the propagation delay advantage over its conventional CMOS counterparts due to smaller output voltage swing and tunable bias current. The CML circuits proposed in this paper can achieve a maximum propagation delay of only 9.3ps, which can satisfy the stringent requirement for the 5 GHz high speed DAC application. Another advantage for CML circuits is its dynamic symmetry characteristic resulting in a reduction of an additional inverter. Simulation results show that the proposed CML circuits can operate from 1.08V to 1.3V with temperature ranging from -40 to +120°C.</p> <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/search?q=Conventional" title="Conventional">Conventional</a>, <a href="https://publications.waset.org/search?q=Current%20Mode%20Logic" title=" Current Mode Logic"> Current Mode Logic</a>, <a href="https://publications.waset.org/search?q=DAC" title=" DAC"> DAC</a>, <a href="https://publications.waset.org/search?q=Decoder" title=" Decoder"> Decoder</a> </p> <a href="https://publications.waset.org/16693/current-mode-logic-circuits-for-10-bit-5ghz-high-speed-digital-to-analog-converter" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/16693/apa" target="_blank" rel="nofollow" class="btn btn-primary btn-sm">APA</a> <a href="https://publications.waset.org/16693/bibtex" target="_blank" rel="nofollow" class="btn btn-primary 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