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EEPROM - Wikipedia

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<li id="toc-Early_attempts" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Early_attempts"> <div class="vector-toc-text"> <span class="vector-toc-numb">1.1</span> <span>Early attempts</span> </div> </a> <ul id="toc-Early_attempts-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Modern_EEPROM" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Modern_EEPROM"> <div class="vector-toc-text"> <span class="vector-toc-numb">1.2</span> <span>Modern EEPROM</span> </div> </a> <ul id="toc-Modern_EEPROM-sublist" class="vector-toc-list"> </ul> </li> </ul> </li> <li id="toc-Theoretical_basis_of_FLOTOX_structure" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Theoretical_basis_of_FLOTOX_structure"> <div class="vector-toc-text"> <span class="vector-toc-numb">2</span> <span>Theoretical basis of FLOTOX structure</span> </div> </a> <ul id="toc-Theoretical_basis_of_FLOTOX_structure-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Today&#039;s_EEPROM_structure" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Today&#039;s_EEPROM_structure"> <div class="vector-toc-text"> <span class="vector-toc-numb">3</span> <span>Today's EEPROM structure</span> </div> </a> <ul id="toc-Today&#039;s_EEPROM_structure-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Security_protections" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Security_protections"> <div class="vector-toc-text"> <span class="vector-toc-numb">4</span> <span>Security protections</span> </div> </a> <ul id="toc-Security_protections-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Electrical_interface" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Electrical_interface"> <div class="vector-toc-text"> <span class="vector-toc-numb">5</span> <span>Electrical interface</span> </div> </a> <button aria-controls="toc-Electrical_interface-sublist" class="cdx-button cdx-button--weight-quiet cdx-button--icon-only vector-toc-toggle"> <span class="vector-icon mw-ui-icon-wikimedia-expand"></span> <span>Toggle Electrical interface subsection</span> </button> <ul id="toc-Electrical_interface-sublist" class="vector-toc-list"> <li id="toc-Serial_bus_devices" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Serial_bus_devices"> <div class="vector-toc-text"> <span class="vector-toc-numb">5.1</span> <span>Serial bus devices</span> </div> </a> <ul id="toc-Serial_bus_devices-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Parallel_bus_devices" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Parallel_bus_devices"> <div class="vector-toc-text"> <span class="vector-toc-numb">5.2</span> <span>Parallel bus devices</span> </div> </a> <ul id="toc-Parallel_bus_devices-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Other_devices" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Other_devices"> <div class="vector-toc-text"> <span class="vector-toc-numb">5.3</span> <span>Other devices</span> </div> </a> <ul id="toc-Other_devices-sublist" class="vector-toc-list"> </ul> </li> </ul> </li> <li id="toc-Failure_modes" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Failure_modes"> <div class="vector-toc-text"> <span class="vector-toc-numb">6</span> <span>Failure modes</span> </div> </a> <ul id="toc-Failure_modes-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-Related_types" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#Related_types"> <div class="vector-toc-text"> <span class="vector-toc-numb">7</span> <span>Related types</span> </div> </a> <button aria-controls="toc-Related_types-sublist" class="cdx-button cdx-button--weight-quiet cdx-button--icon-only vector-toc-toggle"> <span class="vector-icon mw-ui-icon-wikimedia-expand"></span> <span>Toggle Related types subsection</span> </button> <ul id="toc-Related_types-sublist" class="vector-toc-list"> <li id="toc-Comparison_with_EPROM_and_EEPROM/flash" class="vector-toc-list-item vector-toc-level-2"> <a class="vector-toc-link" href="#Comparison_with_EPROM_and_EEPROM/flash"> <div class="vector-toc-text"> <span class="vector-toc-numb">7.1</span> <span>Comparison with EPROM and EEPROM/flash</span> </div> </a> <ul id="toc-Comparison_with_EPROM_and_EEPROM/flash-sublist" class="vector-toc-list"> </ul> </li> </ul> </li> <li id="toc-See_also" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#See_also"> <div class="vector-toc-text"> <span class="vector-toc-numb">8</span> <span>See also</span> </div> </a> <ul id="toc-See_also-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-References" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#References"> <div class="vector-toc-text"> <span class="vector-toc-numb">9</span> <span>References</span> </div> </a> <ul id="toc-References-sublist" class="vector-toc-list"> </ul> </li> <li id="toc-External_links" class="vector-toc-list-item vector-toc-level-1 vector-toc-list-item-expanded"> <a class="vector-toc-link" href="#External_links"> <div class="vector-toc-text"> <span class="vector-toc-numb">10</span> <span>External links</span> </div> </a> <ul id="toc-External_links-sublist" class="vector-toc-list"> </ul> </li> </ul> </div> </div> </nav> </div> </div> <div class="mw-content-container"> <main id="content" class="mw-body"> <header class="mw-body-header vector-page-titlebar"> <nav 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id="firstHeading" class="firstHeading mw-first-heading"><span class="mw-page-title-main">EEPROM</span></h1> <div id="p-lang-btn" class="vector-dropdown mw-portlet mw-portlet-lang" > <input type="checkbox" id="p-lang-btn-checkbox" role="button" aria-haspopup="true" data-event-name="ui.dropdown-p-lang-btn" class="vector-dropdown-checkbox mw-interlanguage-selector" aria-label="Go to an article in another language. Available in 41 languages" > <label id="p-lang-btn-label" for="p-lang-btn-checkbox" class="vector-dropdown-label cdx-button cdx-button--fake-button cdx-button--fake-button--enabled cdx-button--weight-quiet cdx-button--action-progressive mw-portlet-lang-heading-41" aria-hidden="true" ><span class="vector-icon mw-ui-icon-language-progressive mw-ui-icon-wikimedia-language-progressive"></span> <span class="vector-dropdown-label-text">41 languages</span> </label> <div class="vector-dropdown-content"> <div class="vector-menu-content"> <ul class="vector-menu-content-list"> <li class="interlanguage-link interwiki-ar mw-list-item"><a href="https://ar.wikipedia.org/wiki/%D8%B0%D8%A7%D9%83%D8%B1%D8%A9_%D9%82%D8%B1%D8%A7%D8%A1%D8%A9_%D9%81%D9%82%D8%B7_%D9%82%D8%A7%D8%A8%D9%84%D8%A9_%D9%84%D9%84%D8%A8%D8%B1%D9%85%D8%AC%D8%A9_%D9%88%D8%A7%D9%84%D9%85%D8%B3%D8%AD_%D8%A7%D9%84%D9%83%D9%87%D8%B1%D8%A8%D8%A7%D8%A6%D9%8A" title="ذاكرة قراءة فقط قابلة للبرمجة والمسح الكهربائي – Arabic" lang="ar" hreflang="ar" data-title="ذاكرة قراءة فقط قابلة للبرمجة والمسح الكهربائي" data-language-autonym="العربية" data-language-local-name="Arabic" class="interlanguage-link-target"><span>العربية</span></a></li><li class="interlanguage-link interwiki-be mw-list-item"><a href="https://be.wikipedia.org/wiki/EEPROM" title="EEPROM – Belarusian" lang="be" hreflang="be" data-title="EEPROM" data-language-autonym="Беларуская" data-language-local-name="Belarusian" class="interlanguage-link-target"><span>Беларуская</span></a></li><li class="interlanguage-link interwiki-bg mw-list-item"><a href="https://bg.wikipedia.org/wiki/EEPROM" title="EEPROM – Bulgarian" lang="bg" hreflang="bg" data-title="EEPROM" data-language-autonym="Български" data-language-local-name="Bulgarian" class="interlanguage-link-target"><span>Български</span></a></li><li class="interlanguage-link interwiki-ca mw-list-item"><a href="https://ca.wikipedia.org/wiki/EEPROM" title="EEPROM – Catalan" lang="ca" hreflang="ca" data-title="EEPROM" data-language-autonym="Català" data-language-local-name="Catalan" class="interlanguage-link-target"><span>Català</span></a></li><li class="interlanguage-link interwiki-cs mw-list-item"><a href="https://cs.wikipedia.org/wiki/EEPROM" title="EEPROM – Czech" lang="cs" hreflang="cs" data-title="EEPROM" data-language-autonym="Čeština" data-language-local-name="Czech" class="interlanguage-link-target"><span>Čeština</span></a></li><li class="interlanguage-link interwiki-da mw-list-item"><a href="https://da.wikipedia.org/wiki/EEPROM" title="EEPROM – Danish" lang="da" hreflang="da" data-title="EEPROM" data-language-autonym="Dansk" data-language-local-name="Danish" class="interlanguage-link-target"><span>Dansk</span></a></li><li class="interlanguage-link interwiki-de mw-list-item"><a href="https://de.wikipedia.org/wiki/Electrically_Erasable_Programmable_Read-Only_Memory" title="Electrically Erasable Programmable Read-Only Memory – German" lang="de" hreflang="de" data-title="Electrically Erasable Programmable Read-Only Memory" data-language-autonym="Deutsch" data-language-local-name="German" class="interlanguage-link-target"><span>Deutsch</span></a></li><li class="interlanguage-link interwiki-et mw-list-item"><a href="https://et.wikipedia.org/wiki/EEPROM" title="EEPROM – Estonian" lang="et" hreflang="et" data-title="EEPROM" data-language-autonym="Eesti" data-language-local-name="Estonian" class="interlanguage-link-target"><span>Eesti</span></a></li><li class="interlanguage-link interwiki-el mw-list-item"><a href="https://el.wikipedia.org/wiki/EEPROM" title="EEPROM – Greek" lang="el" hreflang="el" data-title="EEPROM" data-language-autonym="Ελληνικά" data-language-local-name="Greek" class="interlanguage-link-target"><span>Ελληνικά</span></a></li><li class="interlanguage-link interwiki-es mw-list-item"><a href="https://es.wikipedia.org/wiki/EEPROM" title="EEPROM – Spanish" lang="es" hreflang="es" data-title="EEPROM" data-language-autonym="Español" data-language-local-name="Spanish" class="interlanguage-link-target"><span>Español</span></a></li><li class="interlanguage-link interwiki-eu mw-list-item"><a href="https://eu.wikipedia.org/wiki/Electrically-Erasable_Progammable_Read_Only" title="Electrically-Erasable Progammable Read Only – Basque" lang="eu" hreflang="eu" data-title="Electrically-Erasable Progammable Read Only" data-language-autonym="Euskara" data-language-local-name="Basque" class="interlanguage-link-target"><span>Euskara</span></a></li><li class="interlanguage-link interwiki-fa mw-list-item"><a href="https://fa.wikipedia.org/wiki/%D8%A6%DB%8C%E2%80%8C%D8%A6%DB%8C%D9%BE%E2%80%8C%D8%B1%D8%A7%D9%85" title="ئی‌ئیپ‌رام – Persian" lang="fa" hreflang="fa" data-title="ئی‌ئیپ‌رام" data-language-autonym="فارسی" data-language-local-name="Persian" class="interlanguage-link-target"><span>فارسی</span></a></li><li class="interlanguage-link interwiki-fr mw-list-item"><a href="https://fr.wikipedia.org/wiki/Electrically-erasable_programmable_read-only_memory" title="Electrically-erasable programmable read-only memory – French" lang="fr" hreflang="fr" data-title="Electrically-erasable programmable read-only memory" data-language-autonym="Français" data-language-local-name="French" class="interlanguage-link-target"><span>Français</span></a></li><li class="interlanguage-link interwiki-gl mw-list-item"><a href="https://gl.wikipedia.org/wiki/EEPROM" title="EEPROM – Galician" lang="gl" hreflang="gl" data-title="EEPROM" data-language-autonym="Galego" data-language-local-name="Galician" class="interlanguage-link-target"><span>Galego</span></a></li><li class="interlanguage-link interwiki-ko mw-list-item"><a href="https://ko.wikipedia.org/wiki/EEPROM" title="EEPROM – Korean" lang="ko" hreflang="ko" data-title="EEPROM" data-language-autonym="한국어" data-language-local-name="Korean" class="interlanguage-link-target"><span>한국어</span></a></li><li class="interlanguage-link interwiki-hr mw-list-item"><a href="https://hr.wikipedia.org/wiki/EEPROM" title="EEPROM – Croatian" lang="hr" hreflang="hr" data-title="EEPROM" data-language-autonym="Hrvatski" data-language-local-name="Croatian" class="interlanguage-link-target"><span>Hrvatski</span></a></li><li class="interlanguage-link interwiki-id mw-list-item"><a href="https://id.wikipedia.org/wiki/EEPROM" title="EEPROM – Indonesian" lang="id" hreflang="id" data-title="EEPROM" data-language-autonym="Bahasa Indonesia" data-language-local-name="Indonesian" class="interlanguage-link-target"><span>Bahasa Indonesia</span></a></li><li class="interlanguage-link interwiki-it mw-list-item"><a href="https://it.wikipedia.org/wiki/EEPROM" title="EEPROM – Italian" lang="it" hreflang="it" data-title="EEPROM" data-language-autonym="Italiano" data-language-local-name="Italian" class="interlanguage-link-target"><span>Italiano</span></a></li><li class="interlanguage-link interwiki-he mw-list-item"><a href="https://he.wikipedia.org/wiki/EEPROM" title="EEPROM – Hebrew" lang="he" hreflang="he" data-title="EEPROM" data-language-autonym="עברית" data-language-local-name="Hebrew" class="interlanguage-link-target"><span>עברית</span></a></li><li class="interlanguage-link interwiki-lt mw-list-item"><a href="https://lt.wikipedia.org/wiki/EEPROM" title="EEPROM – Lithuanian" lang="lt" hreflang="lt" data-title="EEPROM" data-language-autonym="Lietuvių" data-language-local-name="Lithuanian" class="interlanguage-link-target"><span>Lietuvių</span></a></li><li class="interlanguage-link interwiki-hu mw-list-item"><a href="https://hu.wikipedia.org/wiki/EEPROM" title="EEPROM – Hungarian" lang="hu" hreflang="hu" data-title="EEPROM" data-language-autonym="Magyar" data-language-local-name="Hungarian" class="interlanguage-link-target"><span>Magyar</span></a></li><li class="interlanguage-link interwiki-ms mw-list-item"><a href="https://ms.wikipedia.org/wiki/EEPROM" title="EEPROM – Malay" lang="ms" hreflang="ms" data-title="EEPROM" data-language-autonym="Bahasa Melayu" data-language-local-name="Malay" class="interlanguage-link-target"><span>Bahasa Melayu</span></a></li><li class="interlanguage-link interwiki-nl mw-list-item"><a href="https://nl.wikipedia.org/wiki/Electrically_erasable_programmable_read-only_memory" title="Electrically erasable programmable read-only memory – Dutch" lang="nl" hreflang="nl" data-title="Electrically erasable programmable read-only memory" data-language-autonym="Nederlands" data-language-local-name="Dutch" class="interlanguage-link-target"><span>Nederlands</span></a></li><li class="interlanguage-link interwiki-ja mw-list-item"><a href="https://ja.wikipedia.org/wiki/EEPROM" title="EEPROM – Japanese" lang="ja" hreflang="ja" data-title="EEPROM" data-language-autonym="日本語" data-language-local-name="Japanese" class="interlanguage-link-target"><span>日本語</span></a></li><li class="interlanguage-link interwiki-pl mw-list-item"><a href="https://pl.wikipedia.org/wiki/EEPROM" title="EEPROM – Polish" lang="pl" hreflang="pl" data-title="EEPROM" data-language-autonym="Polski" data-language-local-name="Polish" class="interlanguage-link-target"><span>Polski</span></a></li><li class="interlanguage-link interwiki-pt mw-list-item"><a href="https://pt.wikipedia.org/wiki/EEPROM" title="EEPROM – Portuguese" lang="pt" hreflang="pt" data-title="EEPROM" data-language-autonym="Português" data-language-local-name="Portuguese" class="interlanguage-link-target"><span>Português</span></a></li><li class="interlanguage-link interwiki-ro mw-list-item"><a href="https://ro.wikipedia.org/wiki/EEPROM" title="EEPROM – Romanian" lang="ro" hreflang="ro" data-title="EEPROM" data-language-autonym="Română" data-language-local-name="Romanian" class="interlanguage-link-target"><span>Română</span></a></li><li class="interlanguage-link interwiki-ru mw-list-item"><a href="https://ru.wikipedia.org/wiki/EEPROM" title="EEPROM – Russian" lang="ru" hreflang="ru" data-title="EEPROM" data-language-autonym="Русский" data-language-local-name="Russian" class="interlanguage-link-target"><span>Русский</span></a></li><li class="interlanguage-link interwiki-sq mw-list-item"><a href="https://sq.wikipedia.org/wiki/EEPROM" title="EEPROM – Albanian" lang="sq" hreflang="sq" data-title="EEPROM" data-language-autonym="Shqip" data-language-local-name="Albanian" class="interlanguage-link-target"><span>Shqip</span></a></li><li class="interlanguage-link interwiki-simple mw-list-item"><a href="https://simple.wikipedia.org/wiki/EEPROM" title="EEPROM – Simple English" lang="en-simple" hreflang="en-simple" data-title="EEPROM" data-language-autonym="Simple English" data-language-local-name="Simple English" class="interlanguage-link-target"><span>Simple English</span></a></li><li class="interlanguage-link interwiki-sk mw-list-item"><a href="https://sk.wikipedia.org/wiki/EEPROM" title="EEPROM – Slovak" lang="sk" hreflang="sk" data-title="EEPROM" data-language-autonym="Slovenčina" data-language-local-name="Slovak" class="interlanguage-link-target"><span>Slovenčina</span></a></li><li class="interlanguage-link interwiki-sl mw-list-item"><a href="https://sl.wikipedia.org/wiki/EEPROM" title="EEPROM – Slovenian" lang="sl" hreflang="sl" data-title="EEPROM" data-language-autonym="Slovenščina" data-language-local-name="Slovenian" class="interlanguage-link-target"><span>Slovenščina</span></a></li><li class="interlanguage-link interwiki-sr mw-list-item"><a href="https://sr.wikipedia.org/wiki/EEPROM" title="EEPROM – Serbian" lang="sr" hreflang="sr" data-title="EEPROM" data-language-autonym="Српски / srpski" data-language-local-name="Serbian" class="interlanguage-link-target"><span>Српски / srpski</span></a></li><li class="interlanguage-link interwiki-fi mw-list-item"><a href="https://fi.wikipedia.org/wiki/EEPROM" title="EEPROM – Finnish" lang="fi" hreflang="fi" data-title="EEPROM" data-language-autonym="Suomi" data-language-local-name="Finnish" class="interlanguage-link-target"><span>Suomi</span></a></li><li class="interlanguage-link interwiki-ta mw-list-item"><a href="https://ta.wikipedia.org/wiki/%E0%AE%AE%E0%AE%BF%E0%AE%A9%E0%AF%8D%E0%AE%A9%E0%AE%B4%E0%AE%BF_%E0%AE%A8%E0%AE%BF%E0%AE%B0%E0%AE%B2%E0%AF%8D%E0%AE%AE%E0%AE%BE%E0%AE%B1%E0%AF%81_%E0%AE%AA%E0%AE%9F%E0%AE%BF%E0%AE%95%E0%AF%8D%E0%AE%95_%E0%AE%AE%E0%AE%9F%E0%AF%8D%E0%AE%9F%E0%AF%81%E0%AE%AE%E0%AF%8D_%E0%AE%A8%E0%AE%BF%E0%AE%A9%E0%AF%88%E0%AE%B5%E0%AE%95%E0%AE%AE%E0%AF%8D" title="மின்னழி நிரல்மாறு படிக்க மட்டும் நினைவகம் – Tamil" lang="ta" hreflang="ta" data-title="மின்னழி நிரல்மாறு படிக்க மட்டும் நினைவகம்" data-language-autonym="தமிழ்" data-language-local-name="Tamil" class="interlanguage-link-target"><span>தமிழ்</span></a></li><li class="interlanguage-link interwiki-tr mw-list-item"><a href="https://tr.wikipedia.org/wiki/EEPROM" title="EEPROM – Turkish" lang="tr" hreflang="tr" data-title="EEPROM" data-language-autonym="Türkçe" data-language-local-name="Turkish" class="interlanguage-link-target"><span>Türkçe</span></a></li><li class="interlanguage-link interwiki-uk mw-list-item"><a href="https://uk.wikipedia.org/wiki/EEPROM" title="EEPROM – Ukrainian" lang="uk" hreflang="uk" data-title="EEPROM" data-language-autonym="Українська" data-language-local-name="Ukrainian" class="interlanguage-link-target"><span>Українська</span></a></li><li class="interlanguage-link interwiki-vi mw-list-item"><a href="https://vi.wikipedia.org/wiki/EEPROM" title="EEPROM – Vietnamese" lang="vi" hreflang="vi" data-title="EEPROM" data-language-autonym="Tiếng Việt" data-language-local-name="Vietnamese" class="interlanguage-link-target"><span>Tiếng Việt</span></a></li><li class="interlanguage-link interwiki-wuu mw-list-item"><a href="https://wuu.wikipedia.org/wiki/%E7%94%B5%E5%AD%90%E6%8A%B9%E9%99%A4%E5%BC%8F%E5%8F%AF%E5%A4%8D%E5%86%99%E5%8F%AA%E8%AF%BB%E5%86%85%E5%AD%98" title="电子抹除式可复写只读内存 – Wu" lang="wuu" hreflang="wuu" data-title="电子抹除式可复写只读内存" data-language-autonym="吴语" data-language-local-name="Wu" class="interlanguage-link-target"><span>吴语</span></a></li><li class="interlanguage-link interwiki-zh-yue mw-list-item"><a href="https://zh-yue.wikipedia.org/wiki/EEPROM" title="EEPROM – Cantonese" lang="yue" hreflang="yue" data-title="EEPROM" data-language-autonym="粵語" data-language-local-name="Cantonese" class="interlanguage-link-target"><span>粵語</span></a></li><li class="interlanguage-link interwiki-zh mw-list-item"><a href="https://zh.wikipedia.org/wiki/%E9%9B%BB%E5%AD%90%E6%8A%B9%E9%99%A4%E5%BC%8F%E5%8F%AF%E8%A4%87%E5%AF%AB%E5%94%AF%E8%AE%80%E8%A8%98%E6%86%B6%E9%AB%94" title="電子抹除式可複寫唯讀記憶體 – Chinese" lang="zh" hreflang="zh" data-title="電子抹除式可複寫唯讀記憶體" data-language-autonym="中文" data-language-local-name="Chinese" class="interlanguage-link-target"><span>中文</span></a></li> </ul> <div class="after-portlet after-portlet-lang"><span class="wb-langlinks-edit wb-langlinks-link"><a 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a{color:var(--color-progressive)!important}}@media print{body.ns-0 .mw-parser-output .sidebar{display:none!important}}</style><table class="sidebar sidebar-collapse nomobile nowraplinks hlist"><tbody><tr><th class="sidebar-title"><a href="/wiki/Computer_memory" title="Computer memory">Computer memory</a> and <a href="/wiki/Computer_data_storage" title="Computer data storage">data storage</a> types</th></tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">General</div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Memory_cell_(computing)" title="Memory cell (computing)">Memory cell</a></li> <li><a href="/wiki/Memory_coherence" title="Memory coherence">Memory coherence</a></li> <li><a href="/wiki/Cache_coherence" title="Cache coherence">Cache coherence</a></li> <li><a href="/wiki/Memory_hierarchy" title="Memory hierarchy">Memory hierarchy</a></li> <li><a href="/wiki/Memory_access_pattern" title="Memory access pattern">Memory access pattern</a></li> <li><a href="/wiki/Memory_map" title="Memory map">Memory map</a></li> <li><a href="/wiki/Computer_data_storage#Secondary_storage" title="Computer data storage">Secondary storage</a></li> <li><a href="/wiki/Semiconductor_memory" title="Semiconductor memory">MOS memory</a> <ul><li><a href="/wiki/Floating-gate_MOSFET" title="Floating-gate MOSFET">floating-gate</a></li></ul></li> <li><a href="/wiki/Continuous_availability" title="Continuous availability">Continuous availability</a></li> <li><a href="/wiki/Areal_density_(computer_storage)" class="mw-redirect" title="Areal density (computer storage)">Areal density (computer storage)</a></li> <li><a href="/wiki/Block_(data_storage)" title="Block (data storage)">Block (data storage)</a></li> <li><a href="/wiki/Object_storage" title="Object storage">Object storage</a></li> <li><a href="/wiki/Direct-attached_storage" title="Direct-attached storage">Direct-attached storage</a></li> <li><a href="/wiki/Network-attached_storage" title="Network-attached storage">Network-attached storage</a> <ul><li><a href="/wiki/Storage_area_network" title="Storage area network">Storage area network</a></li> <li><a href="/wiki/Block-level_storage" title="Block-level storage">Block-level storage</a></li></ul></li> <li><a href="/wiki/Single-instance_storage" title="Single-instance storage">Single-instance storage</a></li> <li><a href="/wiki/Data" title="Data">Data</a></li> <li><a href="/wiki/Data_model" title="Data model">Structured data</a></li> <li><a href="/wiki/Unstructured_data" title="Unstructured data">Unstructured data</a></li> <li><a href="/wiki/Big_data" title="Big data">Big data</a></li> <li><a href="/wiki/Metadata" title="Metadata">Metadata</a></li> <li><a href="/wiki/Data_compression" title="Data compression">Data compression</a></li> <li><a href="/wiki/Data_corruption" title="Data corruption">Data corruption</a></li> <li><a href="/wiki/Data_cleansing" title="Data cleansing">Data cleansing</a></li> <li><a href="/wiki/Data_degradation" title="Data degradation">Data degradation</a></li> <li><a href="/wiki/Data_integrity" title="Data integrity">Data integrity</a></li> <li><a href="/wiki/Data_security" title="Data security">Data security</a></li> <li><a href="/wiki/Data_validation" title="Data validation">Data validation</a></li> <li><a href="/wiki/Data_validation_and_reconciliation" title="Data validation and reconciliation">Data validation and reconciliation</a></li> <li><a href="/wiki/Data_recovery" title="Data recovery">Data recovery</a></li> <li><a href="/wiki/Computer_data_storage" title="Computer data storage">Storage</a></li> <li><a href="/wiki/Data_cluster" class="mw-redirect" title="Data cluster">Data cluster</a></li> <li><a href="/wiki/Directory_(computing)" title="Directory (computing)">Directory</a></li> <li><a href="/wiki/Shared_resource" title="Shared resource">Shared resource</a></li> <li><a href="/wiki/File_sharing" title="File sharing">File sharing</a></li> <li><a href="/wiki/File_system" title="File system">File system</a></li> <li><a href="/wiki/Clustered_file_system" title="Clustered file system">Clustered file system</a></li> <li><a href="/wiki/Clustered_file_system#Distributed_file_systems" title="Clustered file system">Distributed file system</a></li> <li><a href="/wiki/Distributed_file_system_for_cloud" title="Distributed file system for cloud">Distributed file system for cloud</a></li> <li><a href="/wiki/Distributed_data_store" title="Distributed data store">Distributed data store</a></li> <li><a href="/wiki/Distributed_database" title="Distributed database">Distributed database</a></li> <li><a href="/wiki/Database" title="Database">Database</a></li> <li><a href="/wiki/Data_bank" title="Data bank">Data bank</a></li> <li><a href="/wiki/Data_storage" title="Data storage">Data storage</a></li> <li><a href="/wiki/Data_store" title="Data store">Data store</a></li> <li><a href="/wiki/Data_deduplication" title="Data deduplication">Data deduplication</a></li> <li><a href="/wiki/Data_structure" title="Data structure">Data structure</a></li> <li><a href="/wiki/Data_redundancy" title="Data redundancy">Data redundancy</a></li> <li><a href="/wiki/Replication_(computing)" title="Replication (computing)">Replication (computing)</a></li> <li><a href="/wiki/Memory_refresh" title="Memory refresh">Memory refresh</a></li> <li><a href="/wiki/Storage_record" title="Storage record">Storage record</a></li> <li><a href="/wiki/Information_repository" title="Information repository">Information repository</a></li> <li><a href="/wiki/Knowledge_base" title="Knowledge base">Knowledge base</a></li> <li><a href="/wiki/Computer_file" title="Computer file">Computer file</a></li> <li><a href="/wiki/Object_file" title="Object file">Object file</a></li> <li><a href="/wiki/File_deletion" title="File deletion">File deletion</a></li> <li><a href="/wiki/File_copying" title="File copying">File copying</a></li> <li><a href="/wiki/Backup" title="Backup">Backup</a></li> <li><a href="/wiki/Core_dump" title="Core dump">Core dump</a></li> <li><a href="/wiki/Hex_dump" title="Hex dump">Hex dump</a></li> <li><a href="/wiki/Data_communication" title="Data communication">Data communication</a></li> <li><a href="/wiki/Information_transfer" title="Information transfer">Information transfer</a></li> <li><a href="/wiki/Temporary_file" title="Temporary file">Temporary file</a></li> <li><a href="/wiki/Copy_protection" title="Copy protection">Copy protection</a></li> <li><a href="/wiki/Digital_rights_management" title="Digital rights management">Digital rights management</a></li> <li><a href="/wiki/Volume_(computing)" title="Volume (computing)">Volume (computing)</a></li> <li><a href="/wiki/Boot_sector" title="Boot sector">Boot sector</a></li> <li><a href="/wiki/Master_boot_record" title="Master boot record">Master boot record</a></li> <li><a href="/wiki/Volume_boot_record" title="Volume boot record">Volume boot record</a></li> <li><a href="/wiki/Disk_array" title="Disk array">Disk array</a></li> <li><a href="/wiki/Disk_image" title="Disk image">Disk image</a></li> <li><a href="/wiki/Disk_mirroring" title="Disk mirroring">Disk mirroring</a></li> <li><a href="/wiki/Disk_aggregation" title="Disk aggregation">Disk aggregation</a></li> <li><a href="/wiki/Disk_partitioning" title="Disk partitioning">Disk partitioning</a></li> <li><a href="/wiki/Memory_segmentation" title="Memory segmentation">Memory segmentation</a></li> <li><a href="/wiki/Locality_of_reference" title="Locality of reference">Locality of reference</a></li> <li><a href="/wiki/Logical_disk" title="Logical disk">Logical disk</a></li> <li><a href="/wiki/Storage_virtualization" title="Storage virtualization">Storage virtualization</a></li> <li><a href="/wiki/Virtual_memory" title="Virtual memory">Virtual memory</a></li> <li><a href="/wiki/Memory-mapped_file" title="Memory-mapped file">Memory-mapped file</a></li> <li><a href="/wiki/Software_entropy" class="mw-redirect" title="Software entropy">Software entropy</a></li> <li><a href="/wiki/Software_rot" title="Software rot">Software rot</a></li> <li><a href="/wiki/In-memory_database" title="In-memory database">In-memory database</a></li> <li><a href="/wiki/In-memory_processing" title="In-memory processing">In-memory processing</a></li> <li><a href="/wiki/Persistence_(computer_science)" title="Persistence (computer science)">Persistence (computer science)</a></li> <li><a href="/wiki/Persistent_data_structure" title="Persistent data structure">Persistent data structure</a></li> <li><a href="/wiki/RAID" title="RAID">RAID</a></li> <li><a href="/wiki/Non-RAID_drive_architectures" title="Non-RAID drive architectures">Non-RAID drive architectures</a></li> <li><a href="/wiki/Memory_paging" title="Memory paging">Memory paging</a></li> <li><a href="/wiki/Bank_switching" title="Bank switching">Bank switching</a></li> <li><a href="/wiki/Grid_computing" title="Grid computing">Grid computing</a></li> <li><a href="/wiki/Cloud_computing" title="Cloud computing">Cloud computing</a></li> <li><a href="/wiki/Cloud_storage" title="Cloud storage">Cloud storage</a></li> <li><a href="/wiki/Fog_computing" title="Fog computing">Fog computing</a></li> <li><a href="/wiki/Edge_computing" title="Edge computing">Edge computing</a></li> <li><a href="/wiki/Dew_computing" title="Dew computing">Dew computing</a></li> <li><a href="/wiki/Amdahl%27s_law" title="Amdahl&#39;s law">Amdahl's law</a></li> <li><a href="/wiki/Moore%27s_law" title="Moore&#39;s law">Moore's law</a></li> <li><a href="/wiki/Mark_Kryder#Kryder&#39;s_law_projection" title="Mark Kryder">Kryder's law</a></li></ul></div></div></td> </tr><tr><th class="sidebar-heading"> <a href="/wiki/Volatile_memory" title="Volatile memory">Volatile</a></th></tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="/wiki/Random-access_memory" title="Random-access memory">RAM</a></div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Cache_(computing)#HARDWARE" title="Cache (computing)">Hardware cache</a> <ul><li><a href="/wiki/CPU_cache" title="CPU cache">CPU cache</a></li> <li><a href="/wiki/Scratchpad_memory" title="Scratchpad memory">Scratchpad memory</a></li></ul></li> <li><a href="/wiki/Dynamic_random-access_memory" title="Dynamic random-access memory">DRAM</a> <ul><li><a href="/wiki/EDRAM" title="EDRAM">eDRAM</a></li> <li><a href="/wiki/Synchronous_dynamic_random-access_memory" title="Synchronous dynamic random-access memory">SDRAM</a></li> <li><a href="/wiki/Synchronous_dynamic_random-access_memory#Synchronous_Graphics_RAM_(SGRAM)" title="Synchronous dynamic random-access memory">SGRAM</a></li> <li><a href="/wiki/DDR_SDRAM" title="DDR SDRAM">DDR</a></li> <li><a href="/wiki/GDDR_SDRAM" title="GDDR SDRAM">GDDR</a></li> <li><a href="/wiki/LPDDR" title="LPDDR">LPDDR</a></li> <li><a href="/wiki/Quad_Data_Rate_SRAM" title="Quad Data Rate SRAM">QDRSRAM</a></li> <li><a href="/wiki/Dynamic_random-access_memory#Extended_data_out_DRAM" title="Dynamic random-access memory">EDO DRAM</a></li> <li><a href="/wiki/XDR_DRAM" title="XDR DRAM">XDR DRAM</a></li> <li><a href="/wiki/RDRAM" title="RDRAM">RDRAM</a></li> <li><a href="/wiki/High_Bandwidth_Memory" title="High Bandwidth Memory">HBM</a></li></ul></li> <li><a href="/wiki/Static_random-access_memory" title="Static random-access memory">SRAM</a> <ul><li><a href="/wiki/1T-SRAM" title="1T-SRAM">1T-SRAM</a></li></ul></li> <li><a href="/wiki/Resistive_random-access_memory" title="Resistive random-access memory">ReRAM</a></li> <li><a href="/wiki/Quantum_memory" title="Quantum memory">QRAM</a></li> <li><a href="/wiki/Content-addressable_memory" title="Content-addressable memory">Content-addressable memory</a> (CAM)</li> <li><a href="/wiki/Computational_RAM" title="Computational RAM">Computational RAM</a></li> <li><a href="/wiki/Video_random_access_memory" class="mw-redirect" title="Video random access memory">VRAM</a></li> <li><a href="/wiki/Dual-ported_RAM" title="Dual-ported RAM">Dual-ported RAM</a> <ul><li><a href="/wiki/Video_RAM_(dual-ported_DRAM)" class="mw-redirect" title="Video RAM (dual-ported DRAM)">Video RAM (dual-ported DRAM)</a></li></ul></li></ul></div></div></td> </tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">Historical</div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Williams_tube" title="Williams tube">Williams–Kilburn tube</a> (1946–1947)</li> <li><a href="/wiki/Delay-line_memory" title="Delay-line memory">Delay-line memory</a> (1947)</li> <li><a href="/wiki/Mellon_optical_memory" title="Mellon optical memory">Mellon optical memory</a> (1951)</li> <li><a href="/wiki/Selectron_tube" title="Selectron tube">Selectron tube</a> (1952)</li> <li><a href="/wiki/Dekatron" title="Dekatron">Dekatron</a></li> <li><a href="/wiki/T-RAM" title="T-RAM">T-RAM</a> (2009)</li> <li><a href="/wiki/Z-RAM" title="Z-RAM">Z-RAM</a> (2002–2010)</li></ul></div></div></td> </tr><tr><th class="sidebar-heading"> <a href="/wiki/Non-volatile_memory" title="Non-volatile memory">Non-volatile</a></th></tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="/wiki/Read-only_memory" title="Read-only memory">ROM</a></div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Diode_matrix" title="Diode matrix">Diode matrix</a></li> <li><a href="/wiki/Read-only_memory#Factory-programmed" title="Read-only memory">MROM</a></li> <li><a href="/wiki/Programmable_ROM" title="Programmable ROM">PROM</a> <ul><li><a href="/wiki/EPROM" title="EPROM">EPROM</a></li> <li><a class="mw-selflink selflink">EEPROM</a></li></ul></li> <li><a href="/wiki/ROM_cartridge" title="ROM cartridge">ROM cartridge</a></li> <li><a href="/wiki/Solid-state_storage" title="Solid-state storage">Solid-state storage</a> (SSS) <ul><li><a href="/wiki/Flash_memory" title="Flash memory">Flash memory</a> is used in:</li> <li><a href="/wiki/Solid-state_drive" title="Solid-state drive">Solid-state drive</a> (SSD)</li> <li><a href="/wiki/Solid-state_hybrid_drive" class="mw-redirect" title="Solid-state hybrid drive">Solid-state hybrid drive</a> (SSHD)</li> <li><a href="/wiki/USB_flash_drive" title="USB flash drive">USB flash drive</a></li> <li><a href="/wiki/IBM_FlashSystem" title="IBM FlashSystem">IBM FlashSystem</a></li> <li><a href="/wiki/Flash_Core_Module" title="Flash Core Module">Flash Core Module</a></li></ul></li> <li><a href="/wiki/Memory_card" title="Memory card">Memory card</a> <ul><li><a href="/wiki/Memory_Stick" title="Memory Stick">Memory Stick</a></li> <li><a href="/wiki/CompactFlash" title="CompactFlash">CompactFlash</a></li> <li><a href="/wiki/PC_Card" title="PC Card">PC Card</a></li> <li><a href="/wiki/MultiMediaCard" title="MultiMediaCard">MultiMediaCard</a></li> <li><a href="/wiki/SD_card" title="SD card">SD card</a></li> <li><a href="/wiki/SIM_card" title="SIM card">SIM card</a></li> <li><a href="/wiki/SmartMedia" title="SmartMedia">SmartMedia</a></li> <li><a href="/wiki/Universal_Flash_Storage" title="Universal Flash Storage">Universal Flash Storage</a></li> <li><a href="/wiki/SxS" title="SxS">SxS</a></li> <li><a href="/wiki/MicroP2" title="MicroP2">MicroP2</a></li> <li><a href="/wiki/XQD_card" title="XQD card">XQD card</a></li></ul></li> <li><a href="/wiki/Programmable_metallization_cell" title="Programmable metallization cell">Programmable metallization cell</a></li></ul></div></div></td> </tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="/wiki/Non-volatile_random-access_memory" title="Non-volatile random-access memory">NVRAM</a></div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Memistor" title="Memistor">Memistor</a></li> <li><a href="/wiki/Memristor" title="Memristor">Memristor</a></li> <li><a href="/wiki/Phase-change_memory" title="Phase-change memory">PCM</a> (<a href="/wiki/3D_XPoint" title="3D XPoint">3D XPoint</a>)</li> <li><a href="/wiki/Magnetoresistive_RAM" title="Magnetoresistive RAM">MRAM</a></li> <li><a href="/wiki/Electrochemical_RAM" title="Electrochemical RAM">Electrochemical RAM</a> (ECRAM)</li> <li><a href="/wiki/Nano-RAM" title="Nano-RAM">Nano-RAM</a></li> <li><a href="/wiki/Programmable_metallization_cell" title="Programmable metallization cell">CBRAM</a></li></ul></div></div></td> </tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">Early-stage <a href="/wiki/Non-volatile_random-access_memory" title="Non-volatile random-access memory">NVRAM</a></div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Ferroelectric_RAM" title="Ferroelectric RAM">FeRAM</a></li> <li><a href="/wiki/Resistive_random-access_memory" title="Resistive random-access memory">ReRAM</a></li> <li><a href="/wiki/Fe_FET" title="Fe FET">FeFET memory</a></li></ul></div></div></td> </tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="/wiki/Analog_recording" title="Analog recording">Analog recording</a></div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Phonograph_cylinder" title="Phonograph cylinder">Phonograph cylinder</a></li> <li><a href="/wiki/Phonograph_record" title="Phonograph record">Phonograph record</a></li> <li><a href="/wiki/Quadruplex_videotape" title="Quadruplex videotape">Quadruplex videotape</a></li> <li><a href="/wiki/Vision_Electronic_Recording_Apparatus" title="Vision Electronic Recording Apparatus">Vision Electronic Recording Apparatus</a></li> <li><a href="/wiki/Magnetic_recording" class="mw-redirect" title="Magnetic recording">Magnetic recording</a> <ul><li><a href="/wiki/Magnetic_storage" title="Magnetic storage">Magnetic storage</a></li> <li><a href="/wiki/Magnetic_tape" title="Magnetic tape">Magnetic tape</a></li> <li><a href="/wiki/Magnetic-tape_data_storage" title="Magnetic-tape data storage">Magnetic-tape data storage</a></li> <li><a href="/wiki/Tape_drive" title="Tape drive">Tape drive</a></li> <li><a href="/wiki/Tape_library" title="Tape library">Tape library</a></li> <li><a href="/wiki/Digital_Data_Storage" title="Digital Data Storage">Digital Data Storage</a> (DDS)</li> <li><a href="/wiki/Videotape" title="Videotape">Videotape</a></li> <li><a href="/wiki/Videocassette" class="mw-redirect" title="Videocassette">Videocassette</a></li> <li><a href="/wiki/Cassette_tape" class="mw-redirect" title="Cassette tape">Cassette tape</a></li> <li><a href="/wiki/Linear_Tape-Open" title="Linear Tape-Open">Linear Tape-Open</a></li> <li><a href="/wiki/Betamax" title="Betamax">Betamax</a></li> <li><a href="/wiki/8_mm_video_format" title="8 mm video format">8 mm video format</a></li> <li><a href="/wiki/DV_(video_format)" title="DV (video format)">DV</a></li> <li><a href="/wiki/MiniDV" class="mw-redirect" title="MiniDV">MiniDV</a></li> <li><a href="/wiki/MicroMV" title="MicroMV">MicroMV</a></li> <li><a href="/wiki/U-matic" title="U-matic">U-matic</a></li> <li><a href="/wiki/VHS" title="VHS">VHS</a></li> <li><a href="/wiki/S-VHS" title="S-VHS">S-VHS</a></li> <li><a href="/wiki/VHS-C" title="VHS-C">VHS-C</a></li> <li><a href="/wiki/D-VHS" title="D-VHS">D-VHS</a></li></ul></li> <li><a href="/wiki/Hard_disk_drive" title="Hard disk drive">Hard disk drive</a></li></ul></div></div></td> </tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)"><a href="/wiki/Optical_storage" title="Optical storage">Optical</a></div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/3D_optical_data_storage" title="3D optical data storage">3D optical data storage</a> <ul><li><a href="/wiki/Optical_disc" title="Optical disc">Optical disc</a></li> <li><a href="/wiki/LaserDisc" title="LaserDisc">LaserDisc</a></li> <li><a href="/wiki/Compact_Disc_Digital_Audio" title="Compact Disc Digital Audio">Compact Disc Digital Audio</a> (CDDA)</li> <li><a href="/wiki/Compact_disc" title="Compact disc">CD</a></li> <li><a href="/wiki/CD_Video" title="CD Video">CD Video</a></li> <li><a href="/wiki/CD-R" title="CD-R">CD-R</a></li> <li><a href="/wiki/CD-RW" title="CD-RW">CD-RW</a></li> <li><a href="/wiki/Video_CD" title="Video CD">Video CD</a></li> <li><a href="/wiki/Super_Video_CD" title="Super Video CD">Super Video CD</a></li> <li><a href="/wiki/Mini_CD" title="Mini CD">Mini CD</a></li> <li><a href="/wiki/Nintendo_optical_discs" title="Nintendo optical discs">Nintendo optical discs</a></li> <li><a href="/wiki/CD-ROM" title="CD-ROM">CD-ROM</a></li> <li><a href="/wiki/Hyper_CD-ROM" title="Hyper CD-ROM">Hyper CD-ROM</a></li> <li><a href="/wiki/DVD" title="DVD">DVD</a></li> <li><a href="/wiki/DVD_recordable#DVD+R_and_DVD+RW_(DVD_&quot;plus&quot;)" title="DVD recordable">DVD+R</a></li> <li><a href="/wiki/DVD-Video" title="DVD-Video">DVD-Video</a></li> <li><a href="/wiki/DVD_card" title="DVD card">DVD card</a></li> <li><a href="/wiki/DVD-RAM" title="DVD-RAM">DVD-RAM</a></li> <li><a href="/wiki/MiniDVD" title="MiniDVD">MiniDVD</a></li> <li><a href="/wiki/HD_DVD" title="HD DVD">HD DVD</a></li> <li><a href="/wiki/Blu-ray" title="Blu-ray">Blu-ray</a></li> <li><a href="/wiki/Ultra_HD_Blu-ray" title="Ultra HD Blu-ray">Ultra HD Blu-ray</a></li> <li><a href="/wiki/Holographic_Versatile_Disc" title="Holographic Versatile Disc">Holographic Versatile Disc</a></li></ul></li> <li><a href="/wiki/Write_once_read_many" title="Write once read many">WORM</a></li></ul></div></div></td> </tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">In development</div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Programmable_metallization_cell" title="Programmable metallization cell">CBRAM</a></li> <li><a href="/wiki/Racetrack_memory" title="Racetrack memory">Racetrack memory</a></li> <li><a href="/wiki/Nano-RAM" title="Nano-RAM">NRAM</a></li> <li><a href="/wiki/Millipede_memory" title="Millipede memory">Millipede memory</a></li> <li><a href="/wiki/Electrochemical_RAM" title="Electrochemical RAM">ECRAM</a></li> <li><a href="/wiki/Patterned_media" title="Patterned media">Patterned media</a></li> <li><a href="/wiki/Holographic_data_storage" title="Holographic data storage">Holographic data storage</a> <ul><li><a href="/wiki/Electronic_quantum_holography" title="Electronic quantum holography">Electronic quantum holography</a></li></ul></li> <li><a href="/wiki/5D_optical_data_storage" title="5D optical data storage">5D optical data storage</a></li> <li><a href="/wiki/DNA_digital_data_storage" title="DNA digital data storage">DNA digital data storage</a></li> <li><a href="/wiki/Universal_memory" title="Universal memory">Universal memory</a></li> <li><a href="/wiki/Time_crystal" title="Time crystal">Time crystal</a></li> <li><a href="/wiki/Quantum_memory" title="Quantum memory">Quantum memory</a></li> <li><a href="/wiki/UltraRAM" title="UltraRAM">UltraRAM</a></li></ul></div></div></td> </tr><tr><td class="sidebar-content"> <div class="sidebar-list mw-collapsible mw-collapsed"><div class="sidebar-list-title" style="color: var(--color-base)">Historical</div><div class="sidebar-list-content mw-collapsible-content"> <ul><li><a href="/wiki/Paper_data_storage" title="Paper data storage">Paper data storage</a> (1725)</li> <li><a href="/wiki/Punched_card" title="Punched card">Punched card</a> (1725)</li> <li><a href="/wiki/Punched_tape" title="Punched tape">Punched tape</a> (1725)</li> <li><a href="/wiki/Plugboard" title="Plugboard">Plugboard</a></li> <li><a href="/wiki/Drum_memory" title="Drum memory">Drum memory</a> (1932)</li> <li><a href="/wiki/Magnetic-core_memory" title="Magnetic-core memory">Magnetic-core memory</a> (1949)</li> <li><a href="/wiki/Plated-wire_memory" title="Plated-wire memory">Plated-wire memory</a> (1957)</li> <li><a href="/wiki/Core_rope_memory" title="Core rope memory">Core rope memory</a> (1960s)</li> <li><a href="/wiki/Thin-film_memory" title="Thin-film memory">Thin-film memory</a> (1962)</li> <li><a href="/wiki/Disk_pack" title="Disk pack">Disk pack</a> (1962)</li> <li><a href="/wiki/Twistor_memory" title="Twistor memory">Twistor memory</a> (~1968)</li> <li><a href="/wiki/Bubble_memory" title="Bubble memory">Bubble memory</a> (~1970)</li> <li><a href="/wiki/Floppy_disk" title="Floppy disk">Floppy disk</a> (1971)</li></ul></div></div></td> </tr><tr><td class="sidebar-navbar"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1129693374" /><style data-mw-deduplicate="TemplateStyles:r1239400231">.mw-parser-output .navbar{display:inline;font-size:88%;font-weight:normal}.mw-parser-output .navbar-collapse{float:left;text-align:left}.mw-parser-output .navbar-boxtext{word-spacing:0}.mw-parser-output .navbar ul{display:inline-block;white-space:nowrap;line-height:inherit}.mw-parser-output .navbar-brackets::before{margin-right:-0.125em;content:"[ "}.mw-parser-output .navbar-brackets::after{margin-left:-0.125em;content:" ]"}.mw-parser-output .navbar li{word-spacing:-0.125em}.mw-parser-output .navbar a>span,.mw-parser-output .navbar a>abbr{text-decoration:inherit}.mw-parser-output .navbar-mini abbr{font-variant:small-caps;border-bottom:none;text-decoration:none;cursor:inherit}.mw-parser-output .navbar-ct-full{font-size:114%;margin:0 7em}.mw-parser-output .navbar-ct-mini{font-size:114%;margin:0 4em}html.skin-theme-clientpref-night .mw-parser-output .navbar li a abbr{color:var(--color-base)!important}@media(prefers-color-scheme:dark){html.skin-theme-clientpref-os .mw-parser-output .navbar li a abbr{color:var(--color-base)!important}}@media print{.mw-parser-output .navbar{display:none!important}}</style><div class="navbar plainlinks hlist navbar-mini"><ul><li class="nv-view"><a href="/wiki/Template:Memory_types" title="Template:Memory types"><abbr title="View this template">v</abbr></a></li><li class="nv-talk"><a href="/wiki/Template_talk:Memory_types" title="Template talk:Memory types"><abbr title="Discuss this template">t</abbr></a></li><li class="nv-edit"><a href="/wiki/Special:EditPage/Template:Memory_types" title="Special:EditPage/Template:Memory types"><abbr title="Edit this template">e</abbr></a></li></ul></div></td></tr></tbody></table> <div class="shortdescription nomobile noexcerpt noprint searchaux" style="display:none">Computer memory used for small quantities of data</div> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:Floating_gate_transistor-en.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/a/ae/Floating_gate_transistor-en.svg/250px-Floating_gate_transistor-en.svg.png" decoding="async" width="220" height="82" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/a/ae/Floating_gate_transistor-en.svg/330px-Floating_gate_transistor-en.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/a/ae/Floating_gate_transistor-en.svg/440px-Floating_gate_transistor-en.svg.png 2x" data-file-width="283" data-file-height="106" /></a><figcaption>A cross section of legacy <a href="/wiki/EPROM" title="EPROM">EPROM</a>&#160;structure.<br />Upper insulator: <abbr title="Oxide–nitride–oxide">ONO</abbr><br />Lower&#160;insulator:&#160;<a href="/wiki/Quantum_tunnelling" title="Quantum tunnelling">tunnel</a>&#160;<a href="/wiki/Silicon_dioxide" title="Silicon dioxide">oxide</a></figcaption></figure> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:AT24C02_EEPROM_1480355_6_7_HDR_Enhancer.jpg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/7/71/AT24C02_EEPROM_1480355_6_7_HDR_Enhancer.jpg/220px-AT24C02_EEPROM_1480355_6_7_HDR_Enhancer.jpg" decoding="async" width="220" height="220" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/7/71/AT24C02_EEPROM_1480355_6_7_HDR_Enhancer.jpg/330px-AT24C02_EEPROM_1480355_6_7_HDR_Enhancer.jpg 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/7/71/AT24C02_EEPROM_1480355_6_7_HDR_Enhancer.jpg/440px-AT24C02_EEPROM_1480355_6_7_HDR_Enhancer.jpg 2x" data-file-width="1200" data-file-height="1200" /></a><figcaption><a href="/wiki/STMicroelectronics" title="STMicroelectronics">STMicro</a> <a rel="nofollow" class="external text" href="http://www.st.com/resource/en/datasheet/m24c02-f.pdf">M24C02</a> <a href="/wiki/I%C2%B2C" title="I²C">I²C</a> serial type EEPROM</figcaption></figure> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:ATMEL048_93C46A_SC.jpg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/9/94/ATMEL048_93C46A_SC.jpg/250px-ATMEL048_93C46A_SC.jpg" decoding="async" width="220" height="345" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/9/94/ATMEL048_93C46A_SC.jpg/330px-ATMEL048_93C46A_SC.jpg 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/9/94/ATMEL048_93C46A_SC.jpg/500px-ATMEL048_93C46A_SC.jpg 2x" data-file-width="1911" data-file-height="2993" /></a><figcaption><a href="/wiki/Atmel" title="Atmel">Atmel</a> <a rel="nofollow" class="external text" href="http://ww1.microchip.com/downloads/en/devicedoc/doc0539.pdf">AT93C46A</a> <a href="/wiki/Die_(integrated_circuit)" title="Die (integrated circuit)">die</a></figcaption></figure> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:Atmel-avr-atusb162-HD.jpg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/2/2a/Atmel-avr-atusb162-HD.jpg/220px-Atmel-avr-atusb162-HD.jpg" decoding="async" width="220" height="216" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/2/2a/Atmel-avr-atusb162-HD.jpg/330px-Atmel-avr-atusb162-HD.jpg 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/2/2a/Atmel-avr-atusb162-HD.jpg/440px-Atmel-avr-atusb162-HD.jpg 2x" data-file-width="8415" data-file-height="8250" /></a><figcaption> <a rel="nofollow" class="external text" href="http://ww1.microchip.com/downloads/en/DeviceDoc/7707S.pdf">AT90USB162</a> <a href="/wiki/Microcontroller" title="Microcontroller">MCU</a> integrates 512 Byte EEPROM</figcaption></figure> <p><b>EEPROM</b> or <b>E<sup>2</sup>PROM</b> (<b>electrically erasable programmable read-only memory</b>) is a type of <a href="/wiki/Non-volatile_memory" title="Non-volatile memory">non-volatile memory</a>. It is used in computers, usually integrated in <a href="/wiki/Microcontrollers" class="mw-redirect" title="Microcontrollers">microcontrollers</a> such as <a href="/wiki/Smart_card" title="Smart card">smart cards</a> and <a href="/wiki/Remote_keyless_system" title="Remote keyless system">remote keyless systems</a>, or as a separate chip device, to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. </p><p>EEPROMs are organized as arrays of <a href="/wiki/Floating-gate_transistor" class="mw-redirect" title="Floating-gate transistor">floating-gate transistors</a>. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration. </p><p><a href="/wiki/Flash_memory" title="Flash memory">Flash memory</a> is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (typically 512&#160;bytes or larger) and limited number of write cycles (often 10,000). There is no clear boundary dividing the two, but the term "EEPROM" is generally used to describe non-volatile memory with small erase blocks (as small as one byte) and a long lifetime (typically 1,000,000 cycles). Many past <a href="/wiki/Microcontrollers" class="mw-redirect" title="Microcontrollers">microcontrollers</a> included both (flash memory for the <a href="/wiki/Firmware" title="Firmware">firmware</a> and a small EEPROM for parameters), though the trend with modern microcontrollers is to <a href="/wiki/Emulation_(computing)" class="mw-redirect" title="Emulation (computing)">emulate</a> EEPROM using flash. </p><p>As of 2020, flash memory costs much less than byte-programmable EEPROM and is the dominant memory type wherever a system requires a significant amount of non-volatile <a href="/wiki/Solid-state_storage" title="Solid-state storage">solid-state storage</a>. EEPROMs, however, are still used on applications that only require small amounts of storage, like in <a href="/wiki/Serial_presence_detect" title="Serial presence detect">serial presence detect</a>.<sup id="cite_ref-1" class="reference"><a href="#cite_note-1"><span class="cite-bracket">&#91;</span>1<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-2" class="reference"><a href="#cite_note-2"><span class="cite-bracket">&#91;</span>2<span class="cite-bracket">&#93;</span></a></sup> </p> <meta property="mw:PageProp/toc" /> <div class="mw-heading mw-heading2"><h2 id="History">History</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=1" title="Edit section: History"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:Flash-Programming.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/2/28/Flash-Programming.svg/220px-Flash-Programming.svg.png" decoding="async" width="220" height="183" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/2/28/Flash-Programming.svg/330px-Flash-Programming.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/2/28/Flash-Programming.svg/440px-Flash-Programming.svg.png 2x" data-file-width="460" data-file-height="382" /></a><figcaption><a href="/wiki/Electric_charge" title="Electric charge">Charging</a> mechanism of today's <a href="/wiki/NOR_gate" title="NOR gate">NOR-type</a> <a href="/wiki/Flash_memory" title="Flash memory">FLASH</a> <a href="/wiki/Memory_cell_(computing)" title="Memory cell (computing)">memory cell</a>. <a href="/wiki/Angstrom" title="Angstrom">Å</a> = 10<sup>-10</sup> <a href="/wiki/Metre" title="Metre">m</a>.</figcaption></figure> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:Flash_erase.svg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/1/1f/Flash_erase.svg/250px-Flash_erase.svg.png" decoding="async" width="220" height="183" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/1/1f/Flash_erase.svg/330px-Flash_erase.svg.png 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/1/1f/Flash_erase.svg/440px-Flash_erase.svg.png 2x" data-file-width="460" data-file-height="382" /></a><figcaption><a href="/wiki/Electric_discharge" title="Electric discharge">Discharging</a> mechanism of today's <a href="/wiki/NOR_gate" title="NOR gate">NOR-type</a> <a href="/wiki/Flash_memory" title="Flash memory">FLASH</a> <a href="/wiki/Memory_cell_(computing)" title="Memory cell (computing)">memory cell</a></figcaption></figure> <div class="mw-heading mw-heading3"><h3 id="Early_attempts">Early attempts</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=2" title="Edit section: Early attempts"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>In the early 1970s, some studies, <a href="/wiki/Inventions" class="mw-redirect" title="Inventions">inventions</a>, and development for electrically re-programmable <a href="/wiki/Non-volatile_memory" title="Non-volatile memory">non-volatile memories</a> were performed by various companies and organizations. </p><p>In 1971, early research was presented at <i>the 3rd Conference on <a href="/wiki/Solid-state_electronics" title="Solid-state electronics">Solid State Devices</a>, <a href="/wiki/Tokyo" title="Tokyo">Tokyo</a></i> in Japan by Yasuo Tarui, Yutaka Hayashi, and Kiyoko Nagai at <i><a href="/wiki/Electrotechnical_Laboratory" class="mw-redirect" title="Electrotechnical Laboratory">Electrotechnical Laboratory</a></i>; a Japanese national research institute.<sup id="cite_ref-3" class="reference"><a href="#cite_note-3"><span class="cite-bracket">&#91;</span>3<span class="cite-bracket">&#93;</span></a></sup> They <a href="/wiki/Semiconductor_device_fabrication" title="Semiconductor device fabrication">fabricated</a> an electrically re-programmable non-volatile memory in 1972,<sup id="cite_ref-:0_4-0" class="reference"><a href="#cite_note-:0-4"><span class="cite-bracket">&#91;</span>4<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-Iizuka-1976_5-0" class="reference"><a href="#cite_note-Iizuka-1976-5"><span class="cite-bracket">&#91;</span>5<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-6" class="reference"><a href="#cite_note-6"><span class="cite-bracket">&#91;</span>6<span class="cite-bracket">&#93;</span></a></sup> and continued this study for more than 10 years.<sup id="cite_ref-7" class="reference"><a href="#cite_note-7"><span class="cite-bracket">&#91;</span>7<span class="cite-bracket">&#93;</span></a></sup> However this early memory depended on capacitors to work,<sup id="cite_ref-:0_4-1" class="reference"><a href="#cite_note-:0-4"><span class="cite-bracket">&#91;</span>4<span class="cite-bracket">&#93;</span></a></sup> which modern EEPROM lacks. </p><p>In 1972 IBM patented an electrically re-programmable non-volatile memory invention.<sup id="cite_ref-8" class="reference"><a href="#cite_note-8"><span class="cite-bracket">&#91;</span>8<span class="cite-bracket">&#93;</span></a></sup> Later that year, an avalanche injection type MOS was patented by <a href="/wiki/Fujio_Masuoka" title="Fujio Masuoka">Fujio Masuoka</a>, the inventor of <a href="/wiki/Flash_memory" title="Flash memory">flash memory</a>, at Toshiba<sup id="cite_ref-Masuoka-1972_9-0" class="reference"><a href="#cite_note-Masuoka-1972-9"><span class="cite-bracket">&#91;</span>9<span class="cite-bracket">&#93;</span></a></sup> and IBM patented another later that year.<sup id="cite_ref-10" class="reference"><a href="#cite_note-10"><span class="cite-bracket">&#91;</span>10<span class="cite-bracket">&#93;</span></a></sup> </p><p>In 1974, <a href="/wiki/NEC" title="NEC">NEC</a> patented a electrically erasable carrier injection device.<sup id="cite_ref-11" class="reference"><a href="#cite_note-11"><span class="cite-bracket">&#91;</span>11<span class="cite-bracket">&#93;</span></a></sup> The next year, NEC applied for the trademark "EEPROM®" with the Japan Patent Office. The trademark was granted in 1978.<sup id="cite_ref-12" class="reference"><a href="#cite_note-12"><span class="cite-bracket">&#91;</span>12<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-13" class="reference"><a href="#cite_note-13"><span class="cite-bracket">&#91;</span>13<span class="cite-bracket">&#93;</span></a></sup> </p><p>The theoretical basis of these devices is <a href="/wiki/Avalanche_breakdown" title="Avalanche breakdown">avalanche</a> <a href="/wiki/Hot-carrier_injection" title="Hot-carrier injection">hot-carrier injection</a>. In general, programmable memories, including EPROM, of early 1970s had reliability and endurance problems such as the data retention periods and the number of erase/write cycles.<sup id="cite_ref-Moskowitz_2016_14-0" class="reference"><a href="#cite_note-Moskowitz_2016-14"><span class="cite-bracket">&#91;</span>14<span class="cite-bracket">&#93;</span></a></sup> </p><p>Most of the major semiconductor manufactures, such as <a href="/wiki/Toshiba" title="Toshiba">Toshiba</a>,<sup id="cite_ref-Masuoka-1972_9-1" class="reference"><a href="#cite_note-Masuoka-1972-9"><span class="cite-bracket">&#91;</span>9<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-Iizuka-1976_5-1" class="reference"><a href="#cite_note-Iizuka-1976-5"><span class="cite-bracket">&#91;</span>5<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/Sanyo" title="Sanyo">Sanyo</a> (later, <a href="/wiki/ON_Semiconductor" class="mw-redirect" title="ON Semiconductor">ON Semiconductor</a>),<sup id="cite_ref-15" class="reference"><a href="#cite_note-15"><span class="cite-bracket">&#91;</span>15<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/IBM" title="IBM">IBM</a>,<sup id="cite_ref-16" class="reference"><a href="#cite_note-16"><span class="cite-bracket">&#91;</span>16<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/Intel" title="Intel">Intel</a>,<sup id="cite_ref-17" class="reference"><a href="#cite_note-17"><span class="cite-bracket">&#91;</span>17<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-18" class="reference"><a href="#cite_note-18"><span class="cite-bracket">&#91;</span>18<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/NEC" title="NEC">NEC</a> (later, <a href="/wiki/Renesas_Electronics" title="Renesas Electronics">Renesas Electronics</a>),<sup id="cite_ref-NEC-1974_19-0" class="reference"><a href="#cite_note-NEC-1974-19"><span class="cite-bracket">&#91;</span>19<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/Philips" title="Philips">Philips</a> (later, <a href="/wiki/NXP_Semiconductors" title="NXP Semiconductors">NXP Semiconductors</a>),<sup id="cite_ref-20" class="reference"><a href="#cite_note-20"><span class="cite-bracket">&#91;</span>20<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/Siemens" title="Siemens">Siemens</a> (later, <a href="/wiki/Infineon_Technologies" title="Infineon Technologies">Infineon Technologies</a>),<sup id="cite_ref-21" class="reference"><a href="#cite_note-21"><span class="cite-bracket">&#91;</span>21<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/Honeywell" title="Honeywell">Honeywell</a> (later, <a href="/wiki/Atmel" title="Atmel">Atmel</a>),<sup id="cite_ref-22" class="reference"><a href="#cite_note-22"><span class="cite-bracket">&#91;</span>22<span class="cite-bracket">&#93;</span></a></sup> <a href="/wiki/Texas_Instruments" title="Texas Instruments">Texas Instruments</a>,<sup id="cite_ref-23" class="reference"><a href="#cite_note-23"><span class="cite-bracket">&#91;</span>23<span class="cite-bracket">&#93;</span></a></sup> studied, invented, and manufactured some electrically re-programmable non-volatile devices until 1977. </p> <div class="mw-heading mw-heading3"><h3 id="Modern_EEPROM">Modern EEPROM</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=3" title="Edit section: Modern EEPROM"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>The first EEPROM that used <a href="/wiki/Field_electron_emission#Fowler–Nordheim_tunneling" title="Field electron emission">Fowler-Nordheim tunnelling</a> to erase data was invented by Bernward and patented by <a href="/wiki/Siemens" title="Siemens">Siemens</a> in 1974.<sup id="cite_ref-24" class="reference"><a href="#cite_note-24"><span class="cite-bracket">&#91;</span>24<span class="cite-bracket">&#93;</span></a></sup> In February 1977, Israeli-American <a href="/wiki/Eli_Harari" title="Eli Harari">Eliyahou Harari</a> at <a href="/wiki/Hughes_Aircraft_Company" title="Hughes Aircraft Company">Hughes Aircraft Company</a> patented in the US a modern EEPROM technology, based on Fowler-Nordheim tunnelling through a thin <a href="/wiki/Silicon_dioxide" title="Silicon dioxide">silicon dioxide</a> layer between the <a href="/wiki/Floating-gate_MOSFET" title="Floating-gate MOSFET">floating-gate</a> and the <a href="/wiki/Wafer_(electronics)" title="Wafer (electronics)">wafer</a>. Hughes went on to produce this new EEPROM devices.<sup id="cite_ref-25" class="reference"><a href="#cite_note-25"><span class="cite-bracket">&#91;</span>25<span class="cite-bracket">&#93;</span></a></sup> </p><p>In May 1977, some important research result was disclosed by <a href="/wiki/Fairchild_Camera_and_Instrument" title="Fairchild Camera and Instrument">Fairchild</a> and <a href="/wiki/Siemens" title="Siemens">Siemens</a>. They used <i>SONOS</i> (<a href="/wiki/Polysilicon" class="mw-redirect" title="Polysilicon">polysilicon</a>-<a href="/wiki/Silicon_oxynitride" title="Silicon oxynitride">oxynitride</a>-<a href="/wiki/Nitride" title="Nitride">nitride</a>-<a href="/wiki/Oxide" title="Oxide">oxide</a>-<a href="/wiki/Silicon" title="Silicon">silicon</a>) structure with thickness of silicon dioxide less than 30 <a href="/wiki/%C3%85ngstr%C3%B6m" class="mw-redirect" title="Ångström">Å</a>, and <i>SIMOS</i> (stacked-gate <a href="/wiki/Hot-carrier_injection" title="Hot-carrier injection">injection</a> <a href="/wiki/MOSFET" title="MOSFET">MOS</a>) structure, respectively, for using <a href="/wiki/Field_electron_emission#Fowler–Nordheim_tunneling" title="Field electron emission"><i>Fowler-Nordheim tunnelling</i></a> <a href="/wiki/Hot-carrier_injection" title="Hot-carrier injection">hot-carrier injection</a>.<sup id="cite_ref-26" class="reference"><a href="#cite_note-26"><span class="cite-bracket">&#91;</span>26<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-27" class="reference"><a href="#cite_note-27"><span class="cite-bracket">&#91;</span>27<span class="cite-bracket">&#93;</span></a></sup> </p><p>Around 1976 to 1978, Intel's team, including <a href="/wiki/George_Perlegos" title="George Perlegos">George Perlegos</a>, made some inventions to improve this tunneling E<sup>2</sup>PROM technology.<sup id="cite_ref-28" class="reference"><a href="#cite_note-28"><span class="cite-bracket">&#91;</span>28<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-29" class="reference"><a href="#cite_note-29"><span class="cite-bracket">&#91;</span>29<span class="cite-bracket">&#93;</span></a></sup> In 1978, they developed a 16K (2K word × 8) bit <i>Intel 2816</i> chip with a thin <a href="/wiki/Silicon_dioxide" title="Silicon dioxide">silicon dioxide</a> layer, which was less than 200 <a href="/wiki/%C3%85ngstr%C3%B6m" class="mw-redirect" title="Ångström">Å</a>.<sup id="cite_ref-30" class="reference"><a href="#cite_note-30"><span class="cite-bracket">&#91;</span>30<span class="cite-bracket">&#93;</span></a></sup> In 1980, this structure was publicly introduced as <i>FLOTOX</i>; <a href="/wiki/Floating-gate_MOSFET" title="Floating-gate MOSFET">floating gate</a> <a href="/wiki/Tunnel_junction" title="Tunnel junction">tunnel</a> <a href="/wiki/Oxide" title="Oxide">oxide</a>.<sup id="cite_ref-31" class="reference"><a href="#cite_note-31"><span class="cite-bracket">&#91;</span>31<span class="cite-bracket">&#93;</span></a></sup> The <i>FLOTOX</i> structure improved reliability of erase/write cycles per byte up to 10,000 times.<sup id="cite_ref-32" class="reference"><a href="#cite_note-32"><span class="cite-bracket">&#91;</span>32<span class="cite-bracket">&#93;</span></a></sup> But this device required additional 20–22V V<sub>PP</sub> bias voltage supply for byte erase, except for 5V read operations.<sup id="cite_ref-33" class="reference"><a href="#cite_note-33"><span class="cite-bracket">&#91;</span>33<span class="cite-bracket">&#93;</span></a></sup><sup class="reference nowrap"><span title="Page / location: 5–86">&#58;&#8202;5–86&#8202;</span></sup> In 1981, Perlegos and 2 other members left Intel to form <a href="/wiki/Atmel#Founding_and_1980s_growth" title="Atmel">Seeq Technology</a>,<sup id="cite_ref-34" class="reference"><a href="#cite_note-34"><span class="cite-bracket">&#91;</span>34<span class="cite-bracket">&#93;</span></a></sup> which used on-device <a href="/wiki/Charge_pump" title="Charge pump">charge pumps</a> to supply the high voltages necessary for programming E<sup>2</sup>PROMs. In 1984, Perlogos left Seeq Technology to found <a href="/wiki/Atmel" title="Atmel">Atmel</a>, then Seeq Technology was acquired by Atmel.<sup id="cite_ref-35" class="reference"><a href="#cite_note-35"><span class="cite-bracket">&#91;</span>35<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-36" class="reference"><a href="#cite_note-36"><span class="cite-bracket">&#91;</span>36<span class="cite-bracket">&#93;</span></a></sup> </p><p>Electrically alterable read-only memory (EAROM) is a type of EEPROM that can be modified one or a few <a href="/wiki/Bit" title="Bit">bits</a> at a time.<sup id="cite_ref-37" class="reference"><a href="#cite_note-37"><span class="cite-bracket">&#91;</span>37<span class="cite-bracket">&#93;</span></a></sup> Writing is a very slow process and again needs higher voltage (usually around 12 <a href="/wiki/Volt" title="Volt">V</a>) than is used for read access. EAROMs are intended for applications that require infrequent and only partial rewriting. </p> <div class="mw-heading mw-heading2"><h2 id="Theoretical_basis_of_FLOTOX_structure"><span class="anchor" id="FLOTOX"></span>Theoretical basis of FLOTOX structure</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=4" title="Edit section: Theoretical basis of FLOTOX structure"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>As is described in former section, old EEPROMs are based on <a href="/wiki/Avalanche_breakdown" title="Avalanche breakdown">avalanche breakdown</a>-based <a href="/wiki/Hot-carrier_injection" title="Hot-carrier injection">hot-carrier injection</a> with high <a href="/wiki/Breakdown_voltage" title="Breakdown voltage">reverse breakdown voltage</a>. But <i>FLOTOX</i> theoretical basis is <a href="/wiki/Field_electron_emission#Fowler–Nordheim_tunneling" title="Field electron emission">Fowler–Nordheim tunneling</a> <a href="/wiki/Hot-carrier_injection" title="Hot-carrier injection">hot-carrier injection</a> through a thin <a href="/wiki/Silicon_dioxide" title="Silicon dioxide">silicon dioxide</a> layer between the <a href="/wiki/Floating-gate_MOSFET" title="Floating-gate MOSFET">floating gate</a> and the wafer. In other words, it uses a <a href="/wiki/Tunnel_junction" title="Tunnel junction">tunnel junction</a>.<sup id="cite_ref-Gutmann-2001_38-0" class="reference"><a href="#cite_note-Gutmann-2001-38"><span class="cite-bracket">&#91;</span>38<span class="cite-bracket">&#93;</span></a></sup> </p><p>Theoretical basis of the physical phenomenon itself is the same as today's <a href="/wiki/Flash_memory" title="Flash memory">flash memory</a>. But each FLOTOX structure is in conjunction with another read-control transistor because the floating gate itself is just programming and erasing one data bit.<sup id="cite_ref-39" class="reference"><a href="#cite_note-39"><span class="cite-bracket">&#91;</span>39<span class="cite-bracket">&#93;</span></a></sup> </p><p>Intel's FLOTOX device structure improved EEPROM reliability, in other words, the endurance of the write and erase cycles, and the data retention period. A material of study for <a href="/wiki/Single-event_upset" title="Single-event upset">single-event effect</a> about FLOTOX is available.<sup id="cite_ref-40" class="reference"><a href="#cite_note-40"><span class="cite-bracket">&#91;</span>40<span class="cite-bracket">&#93;</span></a></sup> </p><p>Today, an academic explanation of the FLOTOX device structure can be found in several sources.<sup id="cite_ref-41" class="reference"><a href="#cite_note-41"><span class="cite-bracket">&#91;</span>41<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-42" class="reference"><a href="#cite_note-42"><span class="cite-bracket">&#91;</span>42<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-43" class="reference"><a href="#cite_note-43"><span class="cite-bracket">&#91;</span>43<span class="cite-bracket">&#93;</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Today's_EEPROM_structure"><span id="Today.27s_EEPROM_structure"></span>Today's EEPROM structure</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=5" title="Edit section: Today&#39;s EEPROM structure"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>Nowadays, EEPROM is used for embedded <a href="/wiki/Microcontrollers" class="mw-redirect" title="Microcontrollers">microcontrollers</a> as well as standard EEPROM products. EEPROM still requires a 2-transistor structure per bit to erase a dedicated byte in the memory, while <a href="/wiki/Flash_memory" title="Flash memory">flash memory</a> has 1 transistor per bit to erase a region of the memory.<sup id="cite_ref-Skorobogatov_2017_44-0" class="reference"><a href="#cite_note-Skorobogatov_2017-44"><span class="cite-bracket">&#91;</span>44<span class="cite-bracket">&#93;</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Security_protections">Security protections</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=6" title="Edit section: Security protections"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <figure class="mw-default-size" typeof="mw:File/Thumb"><a href="/wiki/File:Sim_Chip.jpg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/9/9b/Sim_Chip.jpg/250px-Sim_Chip.jpg" decoding="async" width="220" height="165" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/9/9b/Sim_Chip.jpg/330px-Sim_Chip.jpg 1.5x, //upload.wikimedia.org/wikipedia/commons/thumb/9/9b/Sim_Chip.jpg/500px-Sim_Chip.jpg 2x" data-file-width="4896" data-file-height="3672" /></a><figcaption>Inside of a <a href="/wiki/Subscriber_identity_module" class="mw-redirect" title="Subscriber identity module">SIM card</a></figcaption></figure> <p>Because EEPROM technology is used for some security gadgets, such as credit cards, SIM cards, key-less entry, etc., some devices have security protection mechanisms, such as copy-protection.<sup id="cite_ref-Skorobogatov_2017_44-1" class="reference"><a href="#cite_note-Skorobogatov_2017-44"><span class="cite-bracket">&#91;</span>44<span class="cite-bracket">&#93;</span></a></sup><sup id="cite_ref-45" class="reference"><a href="#cite_note-45"><span class="cite-bracket">&#91;</span>45<span class="cite-bracket">&#93;</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Electrical_interface">Electrical interface</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=7" title="Edit section: Electrical interface"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>EEPROM devices use a serial or parallel interface for data input/output. </p> <div class="mw-heading mw-heading3"><h3 id="Serial_bus_devices">Serial bus devices</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=8" title="Edit section: Serial bus devices"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>The common serial interfaces are <a href="/wiki/Serial_Peripheral_Interface_Bus" class="mw-redirect" title="Serial Peripheral Interface Bus">SPI</a>, <a href="/wiki/I%C2%B2C" title="I²C">I²C</a>, <a href="/wiki/Microwire" class="mw-redirect" title="Microwire">Microwire</a>, <a href="/wiki/UNI/O" title="UNI/O">UNI/O</a>, and <a href="/wiki/1-Wire" title="1-Wire">1-Wire</a>. These use from 1 to 4 device pins and allow devices to use packages with 8 pins or less. </p><p>A typical EEPROM serial protocol consists of three phases: <a href="/wiki/Opcode" title="Opcode">OP-code phase</a>, address phase and data phase. The OP-code is usually the first 8 bits input to the serial input pin of the EEPROM device (or with most I²C devices, is implicit); followed by 8 to 24 bits of addressing, depending on the depth of the device, then the read or write data. </p><p>Each EEPROM device typically has its own set of OP-code instructions mapped to different functions. Common operations on <a href="/wiki/Serial_Peripheral_Interface_Bus" class="mw-redirect" title="Serial Peripheral Interface Bus">SPI</a> EEPROM devices are: </p> <ul><li>Write enable (WRENAL)</li> <li>Write disable (WRDI)</li> <li>Read status register (RDSR)</li> <li>Write status register (WRSR)</li> <li>Read data (READ)</li> <li>Write data (WRITE)</li></ul> <p>Other operations supported by some EEPROM devices are: </p> <ul><li>Program</li> <li>Sector erase</li> <li>Chip erase commands</li></ul> <div class="mw-heading mw-heading3"><h3 id="Parallel_bus_devices">Parallel bus devices</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=9" title="Edit section: Parallel bus devices"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>Parallel EEPROM devices typically have an 8-bit data bus and an address bus wide enough to cover the complete memory. Most devices have chip select and write protect pins. Some <a href="/wiki/Microcontroller" title="Microcontroller">microcontrollers</a> also have integrated parallel EEPROM. </p><p>Operation of a parallel EEPROM is simple and fast when compared to serial EEPROM, but these devices are larger due to the higher pin count (28 pins or more) and have been decreasing in popularity in favor of serial EEPROM or flash. </p> <div class="mw-heading mw-heading3"><h3 id="Other_devices">Other devices</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=10" title="Edit section: Other devices"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>EEPROM memory is used to enable features in other types of products that are not strictly memory products. Products such as <a href="/wiki/Real-time_clock" title="Real-time clock">real-time clocks</a>, digital <a href="/wiki/Potentiometer" title="Potentiometer">potentiometers</a>, digital <a href="/wiki/Silicon_bandgap_temperature_sensor" title="Silicon bandgap temperature sensor">temperature sensors</a>, among others, may have small amounts of EEPROM to store calibration information or other data that needs to be available in the event of power loss. It was also used on <a href="/wiki/Video_game_cartridge" class="mw-redirect" title="Video game cartridge">video game cartridges</a> to save game progress and configurations, before the usage of external and internal flash memories. </p> <div class="mw-heading mw-heading2"><h2 id="Failure_modes">Failure modes</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=11" title="Edit section: Failure modes"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>There are two limitations of stored information: endurance and data retention. </p><p>During rewrites, the gate oxide in the <a href="/wiki/Floating-gate_transistor" class="mw-redirect" title="Floating-gate transistor">floating-gate transistors</a> gradually accumulates trapped electrons. The electric field of the trapped electrons adds to the electrons in the floating gate, lowering the window between threshold voltages for zeros vs ones. After sufficient number of rewrite cycles, the difference becomes too small to be recognizable, the cell is stuck in programmed state, and endurance failure occurs. The manufacturers usually specify the maximum number of rewrites being 1 million or more.<sup id="cite_ref-46" class="reference"><a href="#cite_note-46"><span class="cite-bracket">&#91;</span>46<span class="cite-bracket">&#93;</span></a></sup> </p><p>During storage, the electrons injected into the floating gate may drift through the insulator, especially at increased temperature, and cause charge loss, reverting the cell into erased state. The manufacturers usually guarantee data retention of 10 years or more.<sup id="cite_ref-47" class="reference"><a href="#cite_note-47"><span class="cite-bracket">&#91;</span>47<span class="cite-bracket">&#93;</span></a></sup> </p> <div class="mw-heading mw-heading2"><h2 id="Related_types">Related types</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=12" title="Edit section: Related types"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p><a href="/wiki/Flash_memory" title="Flash memory">Flash memory</a> is a later form of EEPROM. In the industry, there is a convention to reserve the term EEPROM to byte-wise erasable memories compared to block-wise erasable flash memories. EEPROM occupies more die area than flash memory for the same capacity, because each cell usually needs a read, a write, and an erase <a href="/wiki/Transistor" title="Transistor">transistor</a>, while flash memory erase circuits are shared by large blocks of cells (often 512×8). </p><p>Newer non-volatile memory technologies such as <a href="/wiki/Ferroelectric_RAM" title="Ferroelectric RAM">FeRAM</a> and <a href="/wiki/Magnetoresistive_RAM" title="Magnetoresistive RAM">MRAM</a> are slowly replacing EEPROMs in some applications, but are expected to remain a small fraction of the EEPROM market for the foreseeable future. </p> <div class="mw-heading mw-heading3"><h3 id="Comparison_with_EPROM_and_EEPROM/flash"><span id="Comparison_with_EPROM_and_EEPROM.2Fflash"></span>Comparison with EPROM and EEPROM/flash</h3><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=13" title="Edit section: Comparison with EPROM and EEPROM/flash"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <p>The difference between <a href="/wiki/EPROM" title="EPROM">EPROM</a> and EEPROM lies in the way that the memory programs and erases. EEPROM can be programmed and erased electrically using <a href="/wiki/Field_electron_emission" title="Field electron emission">field electron emission</a> (more commonly known in the industry as "Fowler–Nordheim tunneling"). </p><p>EPROMs can't be erased electrically and are programmed by <a href="/wiki/Hot-carrier_injection" title="Hot-carrier injection">hot-carrier injection</a> onto the floating gate. Erase is by an <a href="/wiki/Ultraviolet" title="Ultraviolet">ultraviolet</a> light source, although in practice many EPROMs are encapsulated in plastic that is opaque to UV light, making them "one-time programmable". </p><p>Most NOR flash memory is a hybrid style—programming is through <a href="/wiki/Hot-carrier_injection" title="Hot-carrier injection">hot-carrier injection</a> and erase is through <a href="/wiki/Field_electron_emission#Fowler–Nordheim_tunneling" title="Field electron emission">Fowler–Nordheim tunneling</a>. </p> <table class="wikitable"> <tbody><tr class="hintergrundfarbe6"> <th>Type </th> <th>Inject electrons onto gate<br />(mostly interpreted as bit=0) </th> <th>Duration </th> <th>Remove electrons from gate<br />(mostly interpreted as bit=1) </th> <th>Duration/mode </th></tr> <tr> <td>EEPROM</td> <td>field electron emission</td> <td>0.1—5 ms, bytewise</td> <td>field electron emission</td> <td>0.1—5 ms, blockwise </td></tr> <tr> <td>NOR flash memory</td> <td>hot-carrier injection</td> <td>0.01—1 ms</td> <td>field electron emission</td> <td>0.01—1 ms, blockwise </td></tr> <tr> <td>EPROM</td> <td>hot-carrier injection</td> <td>3—50 ms, bytewise</td> <td>ultraviolet light &lt;400nm</td> <td>5—30 minutes, whole chip </td></tr> </tbody></table> <div class="mw-heading mw-heading2"><h2 id="See_also">See also</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=14" title="Edit section: See also"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <ul><li><a href="/wiki/Avalanche_breakdown" title="Avalanche breakdown">Avalanche breakdown</a></li> <li><a href="/wiki/DataFlash" title="DataFlash">DataFlash</a></li> <li><a href="/wiki/EPROM" title="EPROM">EPROM</a></li> <li><a href="/wiki/Field_electron_emission#Fowler–Nordheim_tunneling" title="Field electron emission">Field electron emission §&#160;Fowler–Nordheim tunneling</a></li> <li><a href="/wiki/Flash_memory" title="Flash memory">Flash memory</a></li> <li><a href="/wiki/Floating-gate_MOSFET" title="Floating-gate MOSFET">Floating-gate MOSFET</a></li> <li><a href="/wiki/Intel_HEX" title="Intel HEX">Intel HEX</a> – file format</li> <li><a href="/wiki/Programmer_(hardware)" title="Programmer (hardware)">Programmer (hardware)</a></li> <li><a href="/wiki/Quantum_tunnelling" title="Quantum tunnelling">Quantum tunnelling</a></li> <li><a href="/wiki/SREC_(file_format)" title="SREC (file format)">SREC</a> – file format</li> <li><a href="/wiki/Tunnel_junction" title="Tunnel junction">Tunnel junction</a></li> <li><a href="/wiki/Read-mostly_memory" title="Read-mostly memory">Read-mostly memory</a> (RMM)</li></ul> <div class="mw-heading mw-heading2"><h2 id="References">References</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=15" title="Edit section: References"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <style data-mw-deduplicate="TemplateStyles:r1239543626">.mw-parser-output .reflist{margin-bottom:0.5em;list-style-type:decimal}@media screen{.mw-parser-output .reflist{font-size:90%}}.mw-parser-output .reflist .references{font-size:100%;margin-bottom:0;list-style-type:inherit}.mw-parser-output .reflist-columns-2{column-width:30em}.mw-parser-output .reflist-columns-3{column-width:25em}.mw-parser-output .reflist-columns{margin-top:0.3em}.mw-parser-output .reflist-columns ol{margin-top:0}.mw-parser-output .reflist-columns li{page-break-inside:avoid;break-inside:avoid-column}.mw-parser-output .reflist-upper-alpha{list-style-type:upper-alpha}.mw-parser-output .reflist-upper-roman{list-style-type:upper-roman}.mw-parser-output .reflist-lower-alpha{list-style-type:lower-alpha}.mw-parser-output .reflist-lower-greek{list-style-type:lower-greek}.mw-parser-output .reflist-lower-roman{list-style-type:lower-roman}</style><div class="reflist"> <div class="mw-references-wrap mw-references-columns"><ol class="references"> <li id="cite_note-1"><span class="mw-cite-backlink"><b><a href="#cite_ref-1">^</a></b></span> <span class="reference-text"><style data-mw-deduplicate="TemplateStyles:r1238218222">.mw-parser-output cite.citation{font-style:inherit;word-wrap:break-word}.mw-parser-output .citation q{quotes:"\"""\"""'""'"}.mw-parser-output .citation:target{background-color:rgba(0,127,255,0.133)}.mw-parser-output .id-lock-free.id-lock-free a{background:url("//upload.wikimedia.org/wikipedia/commons/6/65/Lock-green.svg")right 0.1em center/9px no-repeat}.mw-parser-output .id-lock-limited.id-lock-limited a,.mw-parser-output .id-lock-registration.id-lock-registration a{background:url("//upload.wikimedia.org/wikipedia/commons/d/d6/Lock-gray-alt-2.svg")right 0.1em center/9px no-repeat}.mw-parser-output .id-lock-subscription.id-lock-subscription 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.cs1-maint{display:none;color:#085;margin-left:0.3em}.mw-parser-output .cs1-kern-left{padding-left:0.2em}.mw-parser-output .cs1-kern-right{padding-right:0.2em}.mw-parser-output .citation .mw-selflink{font-weight:inherit}@media screen{.mw-parser-output .cs1-format{font-size:95%}html.skin-theme-clientpref-night .mw-parser-output .cs1-maint{color:#18911f}}@media screen and (prefers-color-scheme:dark){html.skin-theme-clientpref-os .mw-parser-output .cs1-maint{color:#18911f}}</style><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://web.archive.org/web/20220726125258/https://www.micron.com/-/media/client/global/documents/products/technical-note/dram-modules/tn_04_42.pdf">"TN-04-42: Memory Module Serial Presence-Detect"</a> <span class="cs1-format">(PDF)</span>. Micron Technology. 2002. Archived from <a rel="nofollow" class="external text" href="https://www.micron.com/-/media/client/global/documents/products/technical-note/dram-modules/tn_04_42.pdf?rev=e5a1537ce3214de5b695f17c340fd023">the original</a> <span class="cs1-format">(PDF)</span> on 2022-07-26<span class="reference-accessdate">. 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Nagai, Kiyoko; Hayashi, Yutaka (1974-07-19). <a rel="nofollow" class="external text" href="https://www.jstage.jst.go.jp/article/oubutsu1932/43/10/43_10_990/_pdf/-char/en.pdf">"Nonvolatile Semiconductor Memory"</a> <span class="cs1-format">(PDF)</span>. <i>Oyo Buturi</i>. <b>43</b> (10): <span class="nowrap">990–</span>1002. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.11470%2Foubutsu1932.43.990">10.11470/oubutsu1932.43.990</a>. <a href="/wiki/ISSN_(identifier)" class="mw-redirect" title="ISSN (identifier)">ISSN</a>&#160;<a rel="nofollow" class="external text" href="https://search.worldcat.org/issn/2188-2290">2188-2290</a>. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20180312205219/https://www.jstage.jst.go.jp/article/oubutsu1932/43/10/43_10_990/_pdf/-char/en.pdf">Archived</a> <span class="cs1-format">(PDF)</span> from the original on 2018-03-12.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.jtitle=Oyo+Buturi&amp;rft.atitle=Nonvolatile+Semiconductor+Memory&amp;rft.volume=43&amp;rft.issue=10&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E990-%3C%2Fspan%3E1002&amp;rft.date=1974-07-19&amp;rft_id=info%3Adoi%2F10.11470%2Foubutsu1932.43.990&amp;rft.issn=2188-2290&amp;rft.aulast=Tarui&amp;rft.aufirst=Yasuo&amp;rft.au=Nagai%2C+Kiyoko&amp;rft.au=Hayashi%2C+Yutaka&amp;rft_id=https%3A%2F%2Fwww.jstage.jst.go.jp%2Farticle%2Foubutsu1932%2F43%2F10%2F43_10_990%2F_pdf%2F-char%2Fen.pdf&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-8"><span class="mw-cite-backlink"><b><a href="#cite_ref-8">^</a></b></span> <span class="reference-text"><style data-mw-deduplicate="TemplateStyles:r1041539562">.mw-parser-output .citation{word-wrap:break-word}.mw-parser-output .citation:target{background-color:rgba(0,127,255,0.133)}</style><span class="citation patent" id="CITEREFAgustaChangJoshi1975"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US3865652A/">US3865652A</a>,&#32;Agusta, Benjamin; Chang, Joseph J.&#32;&amp; Joshi, Madhukar L.,&#32;"Method of forming self-aligned field effect transistor and charge-coupled device",&#32;issued 1975-02-11</span><span class="Z3988" title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&amp;rft.number=US3865652A&amp;rft.cc=&amp;rft.title=Method+of+forming+self-aligned+field+effect+transistor+and+charge-coupled+device&amp;rft.inventor=Agusta&amp;rft.date=1975-02-11"><span style="display: none;">&#160;</span></span></span> </li> <li id="cite_note-Masuoka-1972-9"><span class="mw-cite-backlink">^ <a href="#cite_ref-Masuoka-1972_9-0"><sup><i><b>a</b></i></sup></a> <a href="#cite_ref-Masuoka-1972_9-1"><sup><i><b>b</b></i></sup></a></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFMasuoka1972" class="citation journal cs1">Masuoka, Fujio (31 August 1972). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US3868187A/en">"Avalanche injection type mos memory"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.atitle=Avalanche+injection+type+mos+memory&amp;rft.date=1972-08-31&amp;rft.aulast=Masuoka&amp;rft.aufirst=Fujio&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS3868187A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span> <span class="cs1-visible-error citation-comment"><code class="cs1-code">{{<a href="/wiki/Template:Cite_journal" title="Template:Cite journal">cite journal</a>}}</code>: </span><span class="cs1-visible-error citation-comment">Cite journal requires <code class="cs1-code">&#124;journal=</code> (<a href="/wiki/Help:CS1_errors#missing_periodical" title="Help:CS1 errors">help</a>)</span></span> </li> <li id="cite_note-10"><span class="mw-cite-backlink"><b><a href="#cite_ref-10">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1041539562" /><span class="citation patent" id="CITEREFAgustaChang1974"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US3797000">US3797000A</a>,&#32;Agusta, B.&#32;&amp;&#32;Chang, J.,&#32;"Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information",&#32;issued 1974-03-12</span><span class="Z3988" title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&amp;rft.number=US3797000A&amp;rft.cc=&amp;rft.title=Non-volatile+semiconductor+storage+device+utilizing+avalanche+injection+and+extraction+of+stored+information&amp;rft.inventor=Agusta&amp;rft.date=1974-03-12"><span style="display: none;">&#160;</span></span></span> </li> <li id="cite_note-11"><span class="mw-cite-backlink"><b><a href="#cite_ref-11">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1041539562" /><span class="citation patent" id="CITEREFOhyaKikuchi1977"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/US4016588A">US4016588A</a>,&#32;Ohya, Shuichi&#32;&amp;&#32;Kikuchi, Masanori,&#32;"Non-volatile semiconductor memory device",&#32;issued 1977-04-05</span><span class="Z3988" title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&amp;rft.number=US4016588A&amp;rft.cc=&amp;rft.title=Non-volatile+semiconductor+memory+device&amp;rft.inventor=Ohya&amp;rft.date=1977-04-05"><span style="display: none;">&#160;</span></span></span> </li> <li id="cite_note-12"><span class="mw-cite-backlink"><b><a href="#cite_ref-12">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://www.tmdn.org/tmview/get-detail?st13=JP501975000139811">"EEPROM"</a>. <i>TMview</i>. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20180310010029/https://www.tmdn.org/tmview/get-detail?st13=JP501975000139811">Archived</a> from the original on 2018-03-10.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=unknown&amp;rft.jtitle=TMview&amp;rft.atitle=EEPROM&amp;rft_id=https%3A%2F%2Fwww.tmdn.org%2Ftmview%2Fget-detail%3Fst13%3DJP501975000139811&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-13"><span class="mw-cite-backlink"><b><a href="#cite_ref-13">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://www.j-platpat.inpit.go.jp/web/TR/JPT_1342184/1767B48BDBDDD17B2CDA0380D54389D9">"Reg. No.1342184 – LIVE – REGISTRATION – Issued and Active"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=unknown&amp;rft.btitle=Reg.+No.1342184+%E2%80%93+LIVE+%E2%80%93+REGISTRATION+%E2%80%93+Issued+and+Active&amp;rft_id=https%3A%2F%2Fwww.j-platpat.inpit.go.jp%2Fweb%2FTR%2FJPT_1342184%2F1767B48BDBDDD17B2CDA0380D54389D9&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-Moskowitz_2016-14"><span class="mw-cite-backlink"><b><a href="#cite_ref-Moskowitz_2016_14-0">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFMoskowitz2016" class="citation book cs1">Moskowitz, Sanford L. (2016). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=FyT3DAAAQBAJ&amp;q=">"reliability%20problems"+EPROM+1970s&amp;pg=PA187 <i>Advanced Materials Innovation: Managing Global Technology in the 21st century</i></a>. John Wiley &amp; Sons. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a>&#160;<a href="/wiki/Special:BookSources/9781118986097" title="Special:BookSources/9781118986097"><bdi>9781118986097</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=book&amp;rft.btitle=Advanced+Materials+Innovation%3A+Managing+Global+Technology+in+the+21st+century&amp;rft.pub=John+Wiley+%26+Sons&amp;rft.date=2016&amp;rft.isbn=9781118986097&amp;rft.aulast=Moskowitz&amp;rft.aufirst=Sanford+L.&amp;rft_id=https%3A%2F%2Fbooks.google.com%2Fbooks%3Fid%3DFyT3DAAAQBAJ%26q%3D%22reliability%2520problems%22%2BEPROM%2B1970s%26pg%3DPA187&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-15"><span class="mw-cite-backlink"><b><a href="#cite_ref-15">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFRaiSasamiHasegawaOkazoe1973" class="citation journal cs1">Rai, Yasuki; Sasami, Terutoshi; Hasegawa, Yuzuru; Okazoe, Masaru (1973-05-18). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US4004159A/en">"Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation"</a>. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20180503153251/https://patents.google.com/patent/US4004159A/en">Archived</a> from the original on 2018-05-03.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.atitle=Electrically+reprogrammable+nonvolatile+floating+gate+semi-conductor+memory+device+and+method+of+operation&amp;rft.date=1973-05-18&amp;rft.aulast=Rai&amp;rft.aufirst=Yasuki&amp;rft.au=Sasami%2C+Terutoshi&amp;rft.au=Hasegawa%2C+Yuzuru&amp;rft.au=Okazoe%2C+Masaru&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS4004159A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span> <span class="cs1-visible-error citation-comment"><code class="cs1-code">{{<a href="/wiki/Template:Cite_journal" title="Template:Cite journal">cite journal</a>}}</code>: </span><span class="cs1-visible-error citation-comment">Cite journal requires <code class="cs1-code">&#124;journal=</code> (<a href="/wiki/Help:CS1_errors#missing_periodical" title="Help:CS1 errors">help</a>)</span></span> </li> <li id="cite_note-16"><span class="mw-cite-backlink"><b><a href="#cite_ref-16">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFAbbasBarileLaneLiu.1973" class="citation web cs1">Abbas, Shakir A.; Barile, Conrad A.; Lane, Ralph D.; Liu., Peter T (1973-03-16). <a rel="nofollow" class="external text" href="http://pdfpiw.uspto.gov/.piw?Docid=3836992">"US3836992A; Electrically erasable floating gate fet memory cell"</a>. <i>pdfpiw.uspto.gov</i>. United States Patent and Trademark Office. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20180309182950/http://pdfpiw.uspto.gov/.piw?Docid=3836992">Archived</a> from the original on 2018-03-09.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=unknown&amp;rft.jtitle=pdfpiw.uspto.gov&amp;rft.atitle=US3836992A%3B+Electrically+erasable+floating+gate+fet+memory+cell&amp;rft.date=1973-03-16&amp;rft.aulast=Abbas&amp;rft.aufirst=Shakir+A.&amp;rft.au=Barile%2C+Conrad+A.&amp;rft.au=Lane%2C+Ralph+D.&amp;rft.au=Liu.%2C+Peter+T&amp;rft_id=http%3A%2F%2Fpdfpiw.uspto.gov%2F.piw%3FDocid%3D3836992&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-17"><span class="mw-cite-backlink"><b><a href="#cite_ref-17">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFFrohman1973" class="citation journal cs1">Frohman, Bentchkowsky D (19 October 1973). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US3825946A/en">"Electrically alterable floating gate device and method for altering same"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.atitle=Electrically+alterable+floating+gate+device+and+method+for+altering+same&amp;rft.date=1973-10-19&amp;rft.aulast=Frohman&amp;rft.aufirst=Bentchkowsky+D&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS3825946A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span> <span class="cs1-visible-error citation-comment"><code class="cs1-code">{{<a href="/wiki/Template:Cite_journal" title="Template:Cite journal">cite journal</a>}}</code>: </span><span class="cs1-visible-error citation-comment">Cite journal requires <code class="cs1-code">&#124;journal=</code> (<a href="/wiki/Help:CS1_errors#missing_periodical" title="Help:CS1 errors">help</a>)</span></span> </li> <li id="cite_note-18"><span class="mw-cite-backlink"><b><a href="#cite_ref-18">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFChou1973" class="citation journal cs1">Chou, Sunlin (26 February 1973). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US3919711A/en">"Erasable floating gate device"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.atitle=Erasable+floating+gate+device&amp;rft.date=1973-02-26&amp;rft.aulast=Chou&amp;rft.aufirst=Sunlin&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS3919711A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span> <span class="cs1-visible-error citation-comment"><code class="cs1-code">{{<a href="/wiki/Template:Cite_journal" title="Template:Cite journal">cite journal</a>}}</code>: </span><span class="cs1-visible-error citation-comment">Cite journal requires <code class="cs1-code">&#124;journal=</code> (<a href="/wiki/Help:CS1_errors#missing_periodical" title="Help:CS1 errors">help</a>)</span></span> </li> <li id="cite_note-NEC-1974-19"><span class="mw-cite-backlink"><b><a href="#cite_ref-NEC-1974_19-0">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFOhyaKikuchi1974" class="citation journal cs1">Ohya, Shuichi; Kikuchi, Masanori (1974-12-27). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US4016588A/en">"Non-volatile semiconductor memory device"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.atitle=Non-volatile+semiconductor+memory+device&amp;rft.date=1974-12-27&amp;rft.aulast=Ohya&amp;rft.aufirst=Shuichi&amp;rft.au=Kikuchi%2C+Masanori&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS4016588A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span> <span class="cs1-visible-error citation-comment"><code class="cs1-code">{{<a href="/wiki/Template:Cite_journal" title="Template:Cite journal">cite journal</a>}}</code>: </span><span class="cs1-visible-error citation-comment">Cite journal requires <code class="cs1-code">&#124;journal=</code> (<a href="/wiki/Help:CS1_errors#missing_periodical" title="Help:CS1 errors">help</a>)</span></span> </li> <li id="cite_note-20"><span class="mw-cite-backlink"><b><a href="#cite_ref-20">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFVerweyKramer1974" class="citation journal cs1">Verwey, J. F.; Kramer, R. P. (1974). "Atmos—An electrically reprogrammable read-only memory device". <i>IEEE Transactions on Electron Devices</i>. <b>21</b> (10): <span class="nowrap">631–</span>636. <a href="/wiki/Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/1974ITED...21..631V">1974ITED...21..631V</a>. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FT-ED.1974.17981">10.1109/T-ED.1974.17981</a>. <a href="/wiki/ISSN_(identifier)" class="mw-redirect" title="ISSN (identifier)">ISSN</a>&#160;<a rel="nofollow" class="external text" href="https://search.worldcat.org/issn/0018-9383">0018-9383</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.jtitle=IEEE+Transactions+on+Electron+Devices&amp;rft.atitle=Atmos%E2%80%94An+electrically+reprogrammable+read-only+memory+device&amp;rft.volume=21&amp;rft.issue=10&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E631-%3C%2Fspan%3E636&amp;rft.date=1974&amp;rft.issn=0018-9383&amp;rft_id=info%3Adoi%2F10.1109%2FT-ED.1974.17981&amp;rft_id=info%3Abibcode%2F1974ITED...21..631V&amp;rft.aulast=Verwey&amp;rft.aufirst=J.+F.&amp;rft.au=Kramer%2C+R.+P.&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-21"><span class="mw-cite-backlink"><b><a href="#cite_ref-21">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFB.R._G.1975" class="citation journal cs1">B., Roessler; R. G., Mueller (1975). "Erasable and electrically reprogrammable read-only memory using the N-channel SIMOS one-transistor cell". <i>Siemens Forschungs und Entwicklungsberichte</i>. <b>4</b> (6): <span class="nowrap">345–</span>351. <a href="/wiki/Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/1975SiFoE...4..345R">1975SiFoE...4..345R</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.jtitle=Siemens+Forschungs+und+Entwicklungsberichte&amp;rft.atitle=Erasable+and+electrically+reprogrammable+read-only+memory+using+the+N-channel+SIMOS+one-transistor+cell&amp;rft.volume=4&amp;rft.issue=6&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E345-%3C%2Fspan%3E351&amp;rft.date=1975&amp;rft_id=info%3Abibcode%2F1975SiFoE...4..345R&amp;rft.aulast=B.&amp;rft.aufirst=Roessler&amp;rft.au=R.+G.%2C+Mueller&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-22"><span class="mw-cite-backlink"><b><a href="#cite_ref-22">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFJackHuang1975" class="citation journal cs1">Jack, S; Huang, T. (8 September 1975). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US4051464A/en">"Semiconductor memory cell"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.atitle=Semiconductor+memory+cell&amp;rft.date=1975-09-08&amp;rft.aulast=Jack&amp;rft.aufirst=S&amp;rft.au=Huang%2C+T.&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS4051464A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span> <span class="cs1-visible-error citation-comment"><code class="cs1-code">{{<a href="/wiki/Template:Cite_journal" title="Template:Cite journal">cite journal</a>}}</code>: </span><span class="cs1-visible-error citation-comment">Cite journal requires <code class="cs1-code">&#124;journal=</code> (<a href="/wiki/Help:CS1_errors#missing_periodical" title="Help:CS1 errors">help</a>)</span></span> </li> <li id="cite_note-23"><span class="mw-cite-backlink"><b><a href="#cite_ref-23">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFGosney1977" class="citation journal cs1">Gosney, W. M. (1977). "DIFMOS—A floating-gate electrically erasable nonvolatile semiconductor memory technology". <i>IEEE Transactions on Electron Devices</i>. <b>24</b> (5): <span class="nowrap">594–</span>599. <a href="/wiki/Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/1977ITED...24..594G">1977ITED...24..594G</a>. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FT-ED.1977.18786">10.1109/T-ED.1977.18786</a>. <a href="/wiki/ISSN_(identifier)" class="mw-redirect" title="ISSN (identifier)">ISSN</a>&#160;<a rel="nofollow" class="external text" href="https://search.worldcat.org/issn/0018-9383">0018-9383</a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a>&#160;<a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:45636024">45636024</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.jtitle=IEEE+Transactions+on+Electron+Devices&amp;rft.atitle=DIFMOS%E2%80%94A+floating-gate+electrically+erasable+nonvolatile+semiconductor+memory+technology&amp;rft.volume=24&amp;rft.issue=5&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E594-%3C%2Fspan%3E599&amp;rft.date=1977&amp;rft_id=info%3Adoi%2F10.1109%2FT-ED.1977.18786&amp;rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A45636024%23id-name%3DS2CID&amp;rft.issn=0018-9383&amp;rft_id=info%3Abibcode%2F1977ITED...24..594G&amp;rft.aulast=Gosney&amp;rft.aufirst=W.+M.&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-24"><span class="mw-cite-backlink"><b><a href="#cite_ref-24">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1041539562" /><span class="citation patent"><a rel="nofollow" class="external text" href="https://patents.google.com/patent/GB1517925A/en">GB1517925A</a>,&#32;"Storage field effect transistors",&#32;issued 1978-07-19</span><span class="Z3988" title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&amp;rft.number=GB1517925A&amp;rft.cc=&amp;rft.title=Storage+field+effect+transistors&amp;rft.date=1978-07-19"><span style="display: none;">&#160;</span></span></span> </li> <li id="cite_note-25"><span class="mw-cite-backlink"><b><a href="#cite_ref-25">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation web cs1"><a rel="nofollow" class="external text" href="http://archive.computerhistory.org/resources/access/text/2012/03/102745933-05-01-acc.pdf">"1027459330501acc.pdf"</a> <span class="cs1-format">(PDF)</span>. <a rel="nofollow" class="external text" href="http://archive.wikiwix.com/cache/20150207004103/http://archive.computerhistory.org/resources/access/text/2012/03/102745933-05-01-acc.pdf">Archived</a> <span class="cs1-format">(PDF)</span> from the original on 2015-02-07<span class="reference-accessdate">. Retrieved <span class="nowrap">2015-02-05</span></span>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=unknown&amp;rft.btitle=1027459330501acc.pdf&amp;rft_id=http%3A%2F%2Farchive.computerhistory.org%2Fresources%2Faccess%2Ftext%2F2012%2F03%2F102745933-05-01-acc.pdf&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-26"><span class="mw-cite-backlink"><b><a href="#cite_ref-26">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFChen1977" class="citation journal cs1">Chen, P. C. Y. (May 1977). 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"Electrically erasable and reprogrammable read-only memory using the n-channel SIMOS one-transistor cell". <i>IEEE Transactions on Electron Devices</i>. <b>24</b> (5): <span class="nowrap">606–</span>610. <a href="/wiki/Bibcode_(identifier)" class="mw-redirect" title="Bibcode (identifier)">Bibcode</a>:<a rel="nofollow" class="external text" href="https://ui.adsabs.harvard.edu/abs/1977ITED...24..606R">1977ITED...24..606R</a>. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FT-ED.1977.18788">10.1109/T-ED.1977.18788</a>. <a href="/wiki/ISSN_(identifier)" class="mw-redirect" title="ISSN (identifier)">ISSN</a>&#160;<a rel="nofollow" class="external text" href="https://search.worldcat.org/issn/0018-9383">0018-9383</a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a>&#160;<a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:33203267">33203267</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.jtitle=IEEE+Transactions+on+Electron+Devices&amp;rft.atitle=Electrically+erasable+and+reprogrammable+read-only+memory+using+the+n-channel+SIMOS+one-transistor+cell&amp;rft.volume=24&amp;rft.issue=5&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E606-%3C%2Fspan%3E610&amp;rft.date=1977-05&amp;rft_id=info%3Adoi%2F10.1109%2FT-ED.1977.18788&amp;rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A33203267%23id-name%3DS2CID&amp;rft.issn=0018-9383&amp;rft_id=info%3Abibcode%2F1977ITED...24..606R&amp;rft.aulast=Rossler&amp;rft.aufirst=B.&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-28"><span class="mw-cite-backlink"><b><a href="#cite_ref-28">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFSimko1977" class="citation web cs1">Simko, Richard T. (17 March 1977). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US4119995A/en">"Electrically programmable and electrically erasable MOS memory cell"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=unknown&amp;rft.btitle=Electrically+programmable+and+electrically+erasable+MOS+memory+cell&amp;rft.date=1977-03-17&amp;rft.aulast=Simko&amp;rft.aufirst=Richard+T.&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS4119995A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-29"><span class="mw-cite-backlink"><b><a href="#cite_ref-29">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFFrohman-BentchkowskyMarPerlegosJohnson1978" class="citation web cs1">Frohman-Bentchkowsky, Dov; Mar, Jerry; Perlegos, George; Johnson, William S. (15 December 1978). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US4203158A/en">"Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same"</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=unknown&amp;rft.btitle=Electrically+programmable+and+erasable+MOS+floating+gate+memory+device+employing+tunneling+and+method+of+fabricating+same&amp;rft.date=1978-12-15&amp;rft.aulast=Frohman-Bentchkowsky&amp;rft.aufirst=Dov&amp;rft.au=Mar%2C+Jerry&amp;rft.au=Perlegos%2C+George&amp;rft.au=Johnson%2C+William+S.&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS4203158A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-30"><span class="mw-cite-backlink"><b><a href="#cite_ref-30">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFDummer2013" class="citation book cs1">Dummer, G. W. A. (2013). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=PbYgBQAAQBAJ&amp;q=Intel+FLOTOX&amp;pg=PA212"><i>Electronic Inventions and Discoveries: Electronics from Its Earliest Beginnings to the Present Day</i></a>. Elsevier. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a>&#160;<a href="/wiki/Special:BookSources/9781483145211" title="Special:BookSources/9781483145211"><bdi>9781483145211</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=book&amp;rft.btitle=Electronic+Inventions+and+Discoveries%3A+Electronics+from+Its+Earliest+Beginnings+to+the+Present+Day&amp;rft.pub=Elsevier&amp;rft.date=2013&amp;rft.isbn=9781483145211&amp;rft.aulast=Dummer&amp;rft.aufirst=G.+W.+A.&amp;rft_id=https%3A%2F%2Fbooks.google.com%2Fbooks%3Fid%3DPbYgBQAAQBAJ%26q%3DIntel%2BFLOTOX%26pg%3DPA212&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-31"><span class="mw-cite-backlink"><b><a href="#cite_ref-31">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFJohnsonPerlegosRenningerKuhn1980" class="citation book cs1">Johnson, W.; Perlegos, G.; Renninger, A.; Kuhn, G.; Ranganath, T. (1980). "A 16Kb electrically erasable nonvolatile memory". <i>1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers</i>. Vol.&#160;XXIII. pp.&#160;<span class="nowrap">152–</span>153. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FISSCC.1980.1156030">10.1109/ISSCC.1980.1156030</a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a>&#160;<a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:44313709">44313709</a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=bookitem&amp;rft.atitle=A+16Kb+electrically+erasable+nonvolatile+memory&amp;rft.btitle=1980+IEEE+International+Solid-State+Circuits+Conference.+Digest+of+Technical+Papers&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E152-%3C%2Fspan%3E153&amp;rft.date=1980&amp;rft_id=info%3Adoi%2F10.1109%2FISSCC.1980.1156030&amp;rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A44313709%23id-name%3DS2CID&amp;rft.aulast=Johnson&amp;rft.aufirst=W.&amp;rft.au=Perlegos%2C+G.&amp;rft.au=Renninger%2C+A.&amp;rft.au=Kuhn%2C+G.&amp;rft.au=Ranganath%2C+T.&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-32"><span class="mw-cite-backlink"><b><a href="#cite_ref-32">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFEuzentBorutaLeeJenq1981" class="citation book cs1">Euzent, B.; Boruta, N.; Lee, J.; Jenq, C. (1981). "Reliability Aspects of a Floating Gate E2 PROM". <i>19th International Reliability Physics Symposium</i>. pp.&#160;<span class="nowrap">11–</span>16. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FIRPS.1981.362965">10.1109/IRPS.1981.362965</a>. <a href="/wiki/S2CID_(identifier)" class="mw-redirect" title="S2CID (identifier)">S2CID</a>&#160;<a rel="nofollow" class="external text" href="https://api.semanticscholar.org/CorpusID:41116025">41116025</a>. <q>The Intel 2816 uses the FLOTOX structure, which has been discussed in detail in the literaturel. Basically, it uses an oxide of less than 200A thick between the floating polysilicon gate and the N+ region as shown in Figure 1.</q></cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=bookitem&amp;rft.atitle=Reliability+Aspects+of+a+Floating+Gate+E2+PROM&amp;rft.btitle=19th+International+Reliability+Physics+Symposium&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E11-%3C%2Fspan%3E16&amp;rft.date=1981&amp;rft_id=info%3Adoi%2F10.1109%2FIRPS.1981.362965&amp;rft_id=https%3A%2F%2Fapi.semanticscholar.org%2FCorpusID%3A41116025%23id-name%3DS2CID&amp;rft.aulast=Euzent&amp;rft.aufirst=B.&amp;rft.au=Boruta%2C+N.&amp;rft.au=Lee%2C+J.&amp;rft.au=Jenq%2C+C.&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-33"><span class="mw-cite-backlink"><b><a href="#cite_ref-33">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation book cs1"><a rel="nofollow" class="external text" href="http://www.datasheets360.com/pdf/3161437977278813752"><i>2816A-2 PDF Datasheet - Intel Corporation - Datasheets360.com</i></a>. Intel. October 1983.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=book&amp;rft.btitle=2816A-2+PDF+Datasheet+-+Intel+Corporation+-+Datasheets360.com&amp;rft.pub=Intel&amp;rft.date=1983-10&amp;rft_id=http%3A%2F%2Fwww.datasheets360.com%2Fpdf%2F3161437977278813752&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-34"><span class="mw-cite-backlink"><b><a href="#cite_ref-34">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation web cs1"><a rel="nofollow" class="external text" href="http://www.antiquetech.com/?page_id=900">"Seeq Technology&#160;» AntiqueTech"</a>. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20141002212230/http://www.antiquetech.com/?page_id=900">Archived</a> from the original on 2014-10-02.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=unknown&amp;rft.btitle=Seeq+Technology+%C2%BB+AntiqueTech&amp;rft_id=http%3A%2F%2Fwww.antiquetech.com%2F%3Fpage_id%3D900&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-35"><span class="mw-cite-backlink"><b><a href="#cite_ref-35">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFRostky2002" class="citation journal cs1">Rostky, George (July 2, 2002). <a rel="nofollow" class="external text" href="http://www.eetimes.com/issue/fp/showArticle.jhtml;?articleID=18307418">"Remembering the PROM knights of Intel"</a>. <i>EE Times</i>. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20070929104409/http://www.eetimes.com/issue/fp/showArticle.jhtml;?articleID=18307418">Archived</a> from the original on September 29, 2007<span class="reference-accessdate">. Retrieved <span class="nowrap">2007-02-08</span></span>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.jtitle=EE+Times&amp;rft.atitle=Remembering+the+PROM+knights+of+Intel&amp;rft.date=2002-07-02&amp;rft.aulast=Rostky&amp;rft.aufirst=George&amp;rft_id=http%3A%2F%2Fwww.eetimes.com%2Fissue%2Ffp%2FshowArticle.jhtml%3B%3FarticleID%3D18307418&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-36"><span class="mw-cite-backlink"><b><a href="#cite_ref-36">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation book cs1"><a rel="nofollow" class="external text" href="http://cva.stanford.edu/classes/cs99s/datasheets/at28c16.pdf"><i>Atmel AT28C16 datasheet</i></a> <span class="cs1-format">(PDF)</span> (0540B&#160;ed.). October 1998. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20170829005334/http://cva.stanford.edu/classes/cs99s/datasheets/at28c16.pdf">Archived</a> <span class="cs1-format">(PDF)</span> from the original on 2017-08-29.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=book&amp;rft.btitle=Atmel+AT28C16+datasheet&amp;rft.edition=0540B&amp;rft.date=1998-10&amp;rft_id=http%3A%2F%2Fcva.stanford.edu%2Fclasses%2Fcs99s%2Fdatasheets%2Fat28c16.pdf&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-37"><span class="mw-cite-backlink"><b><a href="#cite_ref-37">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFCiarcia1981" class="citation book cs1">Ciarcia, Steve (1981). <a rel="nofollow" class="external text" href="https://books.google.com/books?id=ocjJE4KtZq4C&amp;dq=Electrically+alterable+read-only+memory+%28EAROM%29&amp;pg=PA130"><i>Ciarcia's Circuit Cellar</i></a>. Circuit Cellar. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a>&#160;<a href="/wiki/Special:BookSources/978-0-07-010963-6" title="Special:BookSources/978-0-07-010963-6"><bdi>978-0-07-010963-6</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=book&amp;rft.btitle=Ciarcia%27s+Circuit+Cellar&amp;rft.pub=Circuit+Cellar&amp;rft.date=1981&amp;rft.isbn=978-0-07-010963-6&amp;rft.aulast=Ciarcia&amp;rft.aufirst=Steve&amp;rft_id=https%3A%2F%2Fbooks.google.com%2Fbooks%3Fid%3DocjJE4KtZq4C%26dq%3DElectrically%2Balterable%2Bread-only%2Bmemory%2B%2528EAROM%2529%26pg%3DPA130&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-Gutmann-2001-38"><span class="mw-cite-backlink"><b><a href="#cite_ref-Gutmann-2001_38-0">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFGutmann2001" class="citation journal cs1">Gutmann, Peter (2001-08-15). <a rel="nofollow" class="external text" href="http://static.usenix.org/legacy/events/sec01/full_papers/gutmann/gutmann_html/#_Ref513619292">"Data Remanence in Semiconductor Devices"</a>. <i>10th USENIX SECURITY SYMPOSIUM</i>. IBM T. J. Watson Research Center: <span class="nowrap">39–</span>54. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20161012131700/http://static.usenix.org/legacy/events/sec01/full_papers/gutmann/gutmann_html/#_Ref513619292">Archived</a> from the original on 2016-10-12.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=article&amp;rft.jtitle=10th+USENIX+SECURITY+SYMPOSIUM&amp;rft.atitle=Data+Remanence+in+Semiconductor+Devices&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E39-%3C%2Fspan%3E54&amp;rft.date=2001-08-15&amp;rft.aulast=Gutmann&amp;rft.aufirst=Peter&amp;rft_id=http%3A%2F%2Fstatic.usenix.org%2Flegacy%2Fevents%2Fsec01%2Ffull_papers%2Fgutmann%2Fgutmann_html%2F%23_Ref513619292&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-39"><span class="mw-cite-backlink"><b><a href="#cite_ref-39">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFJanwadkar2017" class="citation web cs1">Janwadkar, Sudhanshu (2017-10-24). <a rel="nofollow" class="external text" href="https://www.slideshare.net/shudhanshu29/fabrication-of-floating-gate-mos-flotox">"Fabrication of Floating Gate MOS (FLOTOX)"</a>. <i>www.slideshare.net</i>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=unknown&amp;rft.jtitle=www.slideshare.net&amp;rft.atitle=Fabrication+of+Floating+Gate+MOS+%28FLOTOX%29&amp;rft.date=2017-10-24&amp;rft.aulast=Janwadkar&amp;rft.aufirst=Sudhanshu&amp;rft_id=https%3A%2F%2Fwww.slideshare.net%2Fshudhanshu29%2Ffabrication-of-floating-gate-mos-flotox&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-40"><span class="mw-cite-backlink"><b><a href="#cite_ref-40">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFKogaTranGeorgeCrawford" class="citation web cs1">Koga, R.; Tran, V.; George, J.; Crawford, K.; Crain, S.; Zakrzewski, M.; Yu, P. <a rel="nofollow" class="external text" href="http://www.ti.com/pdfs/hirel/space/V3690SEE.pdf">"SEE Sensitivities of Selected Advanced Flash and First-In-First-Out Memories"</a> <span class="cs1-format">(PDF)</span>. The Aerospace Corporation. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20180314042641/http://www.ti.com/pdfs/hirel/space/V3690SEE.pdf">Archived</a> <span class="cs1-format">(PDF)</span> from the original on 2018-03-14.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=unknown&amp;rft.btitle=SEE+Sensitivities+of+Selected+Advanced+Flash+and+First-In-First-Out+Memories&amp;rft.pub=The+Aerospace+Corporation&amp;rft.aulast=Koga&amp;rft.aufirst=R.&amp;rft.au=Tran%2C+V.&amp;rft.au=George%2C+J.&amp;rft.au=Crawford%2C+K.&amp;rft.au=Crain%2C+S.&amp;rft.au=Zakrzewski%2C+M.&amp;rft.au=Yu%2C+P.&amp;rft_id=http%3A%2F%2Fwww.ti.com%2Fpdfs%2Fhirel%2Fspace%2FV3690SEE.pdf&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-41"><span class="mw-cite-backlink"><b><a href="#cite_ref-41">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFFuller2012" class="citation book cs1">Fuller, Dr. Lynn (2012-02-22). <a rel="nofollow" class="external text" href="https://people.rit.edu/lffeee/EEPROM"><i>CMOS Process Variations EEPROM Fabrication Technology</i></a>. Microelectronic Engineering, Rochester Institute of Technology.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=book&amp;rft.btitle=CMOS+Process+Variations+EEPROM+Fabrication+Technology&amp;rft.pub=Microelectronic+Engineering%2C+Rochester+Institute+of+Technology&amp;rft.date=2012-02-22&amp;rft.aulast=Fuller&amp;rft.aufirst=Dr.+Lynn&amp;rft_id=https%3A%2F%2Fpeople.rit.edu%2Flffeee%2FEEPROM&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span><sup class="noprint Inline-Template"><span style="white-space: nowrap;">&#91;<i><a href="/wiki/Wikipedia:Link_rot" title="Wikipedia:Link rot"><span title="&#160;Dead link tagged September 2024">permanent dead link</span></a></i><span style="visibility:hidden; color:transparent; padding-left:2px">&#8205;</span>&#93;</span></sup></span> </li> <li id="cite_note-42"><span class="mw-cite-backlink"><b><a href="#cite_ref-42">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFGroesenekenMaesVanHoudtWitters" class="citation book cs1">Groeseneken, G.; Maes, H. E.; VanHoudt, J.; Witters, J. S. <i>Basics of Nonvolatile Semiconductor Memory Devices</i>. <a href="/wiki/CiteSeerX_(identifier)" class="mw-redirect" title="CiteSeerX (identifier)">CiteSeerX</a>&#160;<span class="id-lock-free" title="Freely accessible"><a rel="nofollow" class="external text" href="https://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.111.9431">10.1.1.111.9431</a></span>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=book&amp;rft.btitle=Basics+of+Nonvolatile+Semiconductor+Memory+Devices&amp;rft_id=https%3A%2F%2Fciteseerx.ist.psu.edu%2Fviewdoc%2Fsummary%3Fdoi%3D10.1.1.111.9431%23id-name%3DCiteSeerX&amp;rft.aulast=Groeseneken&amp;rft.aufirst=G.&amp;rft.au=Maes%2C+H.+E.&amp;rft.au=VanHoudt%2C+J.&amp;rft.au=Witters%2C+J.+S.&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-43"><span class="mw-cite-backlink"><b><a href="#cite_ref-43">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFBergemontChi1997" class="citation web cs1">Bergemont, Albert; Chi, Min-Hwa (1997-05-05). <a rel="nofollow" class="external text" href="https://patents.google.com/patent/US5856222A/en">"US Patent 5856222: Method of fabricating a high density EEPROM cell"</a>. <i>patents.google.com</i>. National Semiconductor Corp.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=unknown&amp;rft.jtitle=patents.google.com&amp;rft.atitle=US+Patent+5856222%3A+Method+of+fabricating+a+high+density+EEPROM+cell&amp;rft.date=1997-05-05&amp;rft.aulast=Bergemont&amp;rft.aufirst=Albert&amp;rft.au=Chi%2C+Min-Hwa&amp;rft_id=https%3A%2F%2Fpatents.google.com%2Fpatent%2FUS5856222A%2Fen&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-Skorobogatov_2017-44"><span class="mw-cite-backlink">^ <a href="#cite_ref-Skorobogatov_2017_44-0"><sup><i><b>a</b></i></sup></a> <a href="#cite_ref-Skorobogatov_2017_44-1"><sup><i><b>b</b></i></sup></a></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite id="CITEREFSkorobogatov2017" class="citation conference cs1">Skorobogatov, Sergei (2017). <a rel="nofollow" class="external text" href="https://www.cl.cam.ac.uk/~sps32/ahsa2017_prob.pdf#page=2">"How Microprobing Can Attack Encrypted Memory"</a> <span class="cs1-format">(PDF)</span>. <i>2017 Euromicro Conference on Digital System Design (DSD)</i>. 2017 Euromicro Conference on Digital System Design (DSD). Vienna. pp.&#160;<span class="nowrap">244–</span>251. <a href="/wiki/Doi_(identifier)" class="mw-redirect" title="Doi (identifier)">doi</a>:<a rel="nofollow" class="external text" href="https://doi.org/10.1109%2FDSD.2017.69">10.1109/DSD.2017.69</a>. <a href="/wiki/ISBN_(identifier)" class="mw-redirect" title="ISBN (identifier)">ISBN</a>&#160;<a href="/wiki/Special:BookSources/978-1-5386-2146-2" title="Special:BookSources/978-1-5386-2146-2"><bdi>978-1-5386-2146-2</bdi></a>.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=conference&amp;rft.atitle=How+Microprobing+Can+Attack+Encrypted+Memory&amp;rft.btitle=2017+Euromicro+Conference+on+Digital+System+Design+%28DSD%29&amp;rft.place=Vienna&amp;rft.pages=%3Cspan+class%3D%22nowrap%22%3E244-%3C%2Fspan%3E251&amp;rft.date=2017&amp;rft_id=info%3Adoi%2F10.1109%2FDSD.2017.69&amp;rft.isbn=978-1-5386-2146-2&amp;rft.aulast=Skorobogatov&amp;rft.aufirst=Sergei&amp;rft_id=https%3A%2F%2Fwww.cl.cam.ac.uk%2F~sps32%2Fahsa2017_prob.pdf%23page%3D2&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-45"><span class="mw-cite-backlink"><b><a href="#cite_ref-45">^</a></b></span> <span class="reference-text"> <link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation web cs1"><a rel="nofollow" class="external text" href="https://www.cl.cam.ac.uk/~sps32/mcu_lock.html">"Breaking copy protection in microcontrollers"</a>. <i>www.cl.cam.ac.uk</i>. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20171022043128/http://www.cl.cam.ac.uk/~sps32/mcu_lock.html">Archived</a> from the original on 2017-10-22.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&amp;rft.genre=unknown&amp;rft.jtitle=www.cl.cam.ac.uk&amp;rft.atitle=Breaking+copy+protection+in+microcontrollers&amp;rft_id=https%3A%2F%2Fwww.cl.cam.ac.uk%2F~sps32%2Fmcu_lock.html&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-46"><span class="mw-cite-backlink"><b><a href="#cite_ref-46">^</a></b></span> <span class="reference-text"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1238218222" /><cite class="citation web cs1"><a rel="nofollow" class="external text" href="http://www.rohm.com/products/lsi/eeprom/faq.html">"Frequently Asked Questions -ROHM Semiconductor"</a>. <a rel="nofollow" class="external text" href="https://web.archive.org/web/20110219060902/http://www.rohm.com/products/lsi/eeprom/faq.html">Archived</a> from the original on 2011-02-19.</cite><span title="ctx_ver=Z39.88-2004&amp;rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&amp;rft.genre=unknown&amp;rft.btitle=Frequently+Asked+Questions+-ROHM+Semiconductor&amp;rft_id=http%3A%2F%2Fwww.rohm.com%2Fproducts%2Flsi%2Feeprom%2Ffaq.html&amp;rfr_id=info%3Asid%2Fen.wikipedia.org%3AEEPROM" class="Z3988"></span></span> </li> <li id="cite_note-47"><span class="mw-cite-backlink"><b><a href="#cite_ref-47">^</a></b></span> <span class="reference-text">System Integration - From Transistor Design to Large Scale Integrated Circuits</span> </li> </ol></div></div> <div class="mw-heading mw-heading2"><h2 id="External_links">External links</h2><span class="mw-editsection"><span class="mw-editsection-bracket">[</span><a href="/w/index.php?title=EEPROM&amp;action=edit&amp;section=16" title="Edit section: External links"><span>edit</span></a><span class="mw-editsection-bracket">]</span></span></div> <ul><li><a rel="nofollow" class="external text" href="http://static.usenix.org/legacy/events/sec01/full_papers/gutmann/gutmann_html/">Gutmann (2001) papaer: "Data Remanence in Semiconductor Devices" | USENIX</a></li></ul> <div class="navbox-styles"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1129693374" /><style data-mw-deduplicate="TemplateStyles:r1236075235">.mw-parser-output .navbox{box-sizing:border-box;border:1px solid #a2a9b1;width:100%;clear:both;font-size:88%;text-align:center;padding:1px;margin:1em auto 0}.mw-parser-output .navbox .navbox{margin-top:0}.mw-parser-output .navbox+.navbox,.mw-parser-output .navbox+.navbox-styles+.navbox{margin-top:-1px}.mw-parser-output .navbox-inner,.mw-parser-output .navbox-subgroup{width:100%}.mw-parser-output .navbox-group,.mw-parser-output .navbox-title,.mw-parser-output .navbox-abovebelow{padding:0.25em 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style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Booting_process_of_Windows" title="Booting process of Windows">Windows</a></span> <ul><li><span class="nowrap"><a href="/wiki/Architecture_of_Windows_9x#Boot_sequence" title="Architecture of Windows 9x">9x</a></span></li> <li><span class="nowrap"><a href="/wiki/Booting_process_of_Windows_NT" class="mw-redirect" title="Booting process of Windows NT">NT</a></span></li></ul></li> <li><span class="nowrap"><a href="/wiki/Booting_process_of_Linux" title="Booting process of Linux">Linux</a></span> <ul><li><span class="nowrap"><a href="/wiki/Booting_process_of_Android_devices" title="Booting process of Android devices">Android</a></span></li></ul></li></ul> </div></td><td class="noviewer navbox-image" rowspan="10" style="width:1px;padding:0 0 0 2px"><div><span typeof="mw:File"><a href="/wiki/File:WD_Blue_WD5000LPVX_-_controller_-_Winbond_25X20CLVIG-0182.jpg" class="mw-file-description"><img src="//upload.wikimedia.org/wikipedia/commons/thumb/f/f8/WD_Blue_WD5000LPVX_-_controller_-_Winbond_25X20CLVIG-0182.jpg/120px-WD_Blue_WD5000LPVX_-_controller_-_Winbond_25X20CLVIG-0182.jpg" decoding="async" width="100" height="100" class="mw-file-element" srcset="//upload.wikimedia.org/wikipedia/commons/thumb/f/f8/WD_Blue_WD5000LPVX_-_controller_-_Winbond_25X20CLVIG-0182.jpg/250px-WD_Blue_WD5000LPVX_-_controller_-_Winbond_25X20CLVIG-0182.jpg 1.5x" data-file-width="1535" data-file-height="1535" /></a></span></div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Booting <a href="/wiki/Firmware#Computers" title="Firmware">firmware</a></th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"></div><table class="nowraplinks navbox-subgroup" style="border-spacing:0"><tbody><tr><th scope="row" class="navbox-group" style="width:1%">Types</th><td class="navbox-list-with-group navbox-list navbox-even" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Proprietary_firmware" title="Proprietary firmware">Proprietary firmware</a></span></li> <li><span class="nowrap"><a href="/wiki/Open-source_firmware" title="Open-source firmware">Open-source firmware</a></span></li> <li><span class="nowrap"><a href="/wiki/Custom_firmware" title="Custom firmware">Custom firmware</a></span></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Interfaces</th><td class="navbox-list-with-group navbox-list navbox-odd" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/UEFI" title="UEFI">UEFI</a></span></li> <li><span class="nowrap"><a href="/wiki/BIOS" title="BIOS">BIOS</a></span> <ul><li><span class="nowrap"><a href="/wiki/Video_BIOS" title="Video BIOS">Video BIOS</a></span></li></ul></li> <li><span class="nowrap"><a href="/wiki/Open_Firmware" title="Open Firmware">Open Firmware</a></span></li> <li><span class="nowrap"><a href="/wiki/ACPI" title="ACPI">ACPI</a></span></li> <li><span class="nowrap"><a href="/wiki/MultiProcessor_Specification" title="MultiProcessor Specification">MultiProcessor Specification</a></span></li> <li><span class="nowrap"><a href="/wiki/Advanced_Power_Management" title="Advanced Power Management">APM</a></span></li> <li><span class="nowrap"><a href="/wiki/Legacy_Plug_and_Play" title="Legacy Plug and Play">Legacy Plug and Play</a></span></li> <li><span class="nowrap"><a href="/wiki/ARC_(specification)" title="ARC (specification)">AlphaBIOS</a></span></li> <li><span class="nowrap"><a href="/wiki/SRM_firmware" title="SRM firmware">SRM</a></span></li> <li><span class="nowrap"><a href="/wiki/Simple_Firmware_Interface" title="Simple Firmware Interface">SFI</a></span></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Implementations</th><td class="navbox-list-with-group navbox-list navbox-even" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/SeaBIOS" title="SeaBIOS">SeaBIOS</a></span></li> <li><span class="nowrap"><a href="/wiki/Award_Software" title="Award Software">Award BIOS</a></span></li> <li><span class="nowrap"><a href="/wiki/American_Megatrends" title="American Megatrends">American Megatrends</a></span> <ul><li><span class="nowrap"><a href="/wiki/AMIBIOS" class="mw-redirect" title="AMIBIOS">AMIBIOS</a></span></li> <li><span class="nowrap"><a href="/wiki/AMI_Aptio" class="mw-redirect" title="AMI Aptio">AMI Aptio</a></span></li></ul></li> <li><span class="nowrap"><a href="/wiki/Insyde_Software" title="Insyde Software">InsydeH2O</a></span></li> <li><span class="nowrap"><a href="/wiki/Phoenix_Technologies" title="Phoenix Technologies">Phoenix SecureCore UEFI</a></span></li> <li><span class="nowrap"><a href="/wiki/TianoCore_EDK_II" title="TianoCore EDK II">TianoCore EDK II</a></span></li> <li><span class="nowrap"><a href="/wiki/OpenBIOS" title="OpenBIOS">OpenBIOS</a></span></li> <li><span class="nowrap"><a href="/wiki/Coreboot" title="Coreboot">Coreboot</a></span></li> <li><span class="nowrap"><a href="/wiki/Libreboot" title="Libreboot">Libreboot</a></span></li> <li><span class="nowrap"><a href="/wiki/LinuxBoot" title="LinuxBoot">LinuxBoot</a></span></li> <li><span class="nowrap"><a href="/wiki/Kickstart_(Amiga)" title="Kickstart (Amiga)">Kickstart</a></span></li> <li><span class="nowrap"><a href="/wiki/Run-Time_Abstraction_Services" title="Run-Time Abstraction Services">Run-Time Abstraction Services</a></span></li></ul> </div></td></tr></tbody></table><div></div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Hybrid firmware bootloader</th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Common_Firmware_Environment" title="Common Firmware Environment">Common Firmware Environment</a> </span></li> <li><span class="nowrap"><a href="/wiki/Das_U-Boot" title="Das U-Boot">Das U-Boot</a></span></li> <li><span class="nowrap"><a href="/wiki/ARCS_(computing)" title="ARCS (computing)">ARCS</a></span></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%"><a href="/wiki/Bootloaders" class="mw-redirect" title="Bootloaders">Bootloaders</a></th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Bootloader_unlocking" title="Bootloader unlocking">Bootloader unlocking</a></span></li> <li><span class="nowrap"><a href="/wiki/Comparison_of_bootloaders" title="Comparison of bootloaders">Comparison of bootloaders</a></span></li></ul> </div><table class="nowraplinks navbox-subgroup" style="border-spacing:0"><tbody><tr><th id="Implementations15" scope="row" class="navbox-group" style="width:1%">Implementations</th><td class="navbox-list-with-group navbox-list navbox-odd" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Acronis_OS_Selector" class="mw-redirect" title="Acronis OS Selector">Acronis OS Selector</a></span></li> <li><span class="nowrap"><a href="/wiki/Barebox" title="Barebox">Barebox</a></span></li> <li><span class="nowrap"><a href="/wiki/BootManager" class="mw-redirect" title="BootManager">BootManager</a></span></li> <li><span class="nowrap"><a href="/wiki/BootX_(Apple)" title="BootX (Apple)">BootX (Apple)</a></span></li> <li><span class="nowrap"><a href="/wiki/BootX_(Linux)" title="BootX (Linux)">BootX (Linux)</a></span></li> <li><span class="nowrap"><a href="/wiki/GNU_GRUB" title="GNU GRUB">GNU GRUB</a></span></li> <li><span class="nowrap"><a href="/wiki/IBoot" title="IBoot">iBoot</a></span></li> <li><span class="nowrap"><a href="/wiki/Systemd-boot" title="Systemd-boot">systemd-boot</a></span></li> <li><span class="nowrap"><a href="/wiki/Limine_(bootloader)" title="Limine (bootloader)">Limine</a></span></li> <li><span class="nowrap"><a href="/wiki/Loadlin" title="Loadlin">loadlin</a></span></li> <li><span class="nowrap"><a href="/wiki/MILO_(bootloader)" title="MILO (bootloader)">MILO</a></span></li> <li><span class="nowrap"><a href="/wiki/NTLDR" title="NTLDR">NTLDR</a></span></li> <li><span class="nowrap"><a href="/wiki/OpeniBoot" title="OpeniBoot">OpeniBoot</a></span></li> <li><span class="nowrap"><a href="/wiki/Plop_Boot_Manager" title="Plop Boot Manager">Plop Boot Manager</a></span></li> <li><span class="nowrap"><a href="/wiki/RedBoot" title="RedBoot">RedBoot</a></span></li> <li><span class="nowrap"><a href="/wiki/REFInd" title="REFInd">rEFInd</a></span></li> <li><span class="nowrap"><a href="/wiki/REFIt" title="REFIt">rEFIt</a></span></li> <li><span class="nowrap"><a href="/wiki/SYSLINUX" title="SYSLINUX">SYSLINUX</a></span></li> <li><span class="nowrap"><a href="/wiki/Windows_Boot_Manager" title="Windows Boot Manager">Windows Boot Manager</a></span></li> <li><span class="nowrap"><a href="/wiki/XOSL" title="XOSL">xOSL</a></span></li> <li><span class="nowrap"><a href="/wiki/Yaboot" title="Yaboot">Yaboot</a></span></li></ul> </div></td></tr></tbody></table><div> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Partition layouts</th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/GUID_Partition_Table" title="GUID Partition Table">GUID Partition Table</a></span></li> <li><span class="nowrap"><a href="/wiki/Master_boot_record" title="Master boot record">Master boot record</a></span></li> <li><span class="nowrap"><a href="/wiki/Apple_Partition_Map" title="Apple Partition Map">Apple Partition Map</a></span></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%"><a href="/wiki/System_partition_and_boot_partition" title="System partition and boot partition">Partitions</a></th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/EFI_system_partition" title="EFI system partition">EFI system partition</a></span></li> <li><span class="nowrap"><a href="/wiki/BIOS_boot_partition" title="BIOS boot partition">BIOS boot partition</a></span></li> <li><span class="nowrap"><a href="/wiki//boot/" class="mw-redirect" title="/boot/">/boot/</a></span></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Utilities</th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"></div><table class="nowraplinks navbox-subgroup" style="border-spacing:0"><tbody><tr><th scope="row" class="navbox-group" style="width:1%">Software</th><td class="navbox-list-with-group navbox-list navbox-even" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Flashrom_(utility)" title="Flashrom (utility)">flashrom</a></span></li> <li><span class="nowrap"><a href="/wiki/Fwupd" title="Fwupd">fwupd</a></span></li> <li><span class="nowrap"><a href="/wiki/UEFITool" title="UEFITool">UEFITool</a></span></li> <li><span class="nowrap"><a href="/wiki/Odin_(firmware_flashing_software)" title="Odin (firmware flashing software)">Odin</a></span> <ul><li><span class="nowrap"><a href="/wiki/Odin_(firmware_flashing_software)#Heimdall" title="Odin (firmware flashing software)">Heimdall</a></span></li></ul></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Hardware</th><td class="navbox-list-with-group navbox-list navbox-odd" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Bus_Pirate" title="Bus Pirate">Bus Pirate</a></span></li> <li><span class="nowrap"><a href="/wiki/Raspberry_Pi" title="Raspberry Pi">Raspberry Pi</a></span></li> <li><span class="nowrap"><a href="/wiki/FTDI" title="FTDI">ft2232</a></span></li></ul> </div></td></tr></tbody></table><div></div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%"><a href="/wiki/Network_booting" title="Network booting">Network boot</a></th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Preboot_Execution_Environment" title="Preboot Execution Environment">Preboot Execution Environment</a></span> <ul><li><span class="nowrap"><a href="/wiki/GPXE" title="GPXE">gPXE</a></span></li> <li><span class="nowrap"><a href="/wiki/IPXE" title="IPXE">iPXE</a></span></li></ul></li> <li><span class="nowrap"><a href="/wiki/NetBoot" title="NetBoot">NetBoot</a></span></li> <li><span class="nowrap"><a href="/wiki/Remote_Initial_Program_Load" title="Remote Initial Program Load">Remote Initial Program Load</a></span></li> <li><span class="nowrap"><a href="/wiki/Wake-on-LAN" title="Wake-on-LAN">Wake-on-LAN</a></span></li> <li><span class="nowrap"><a href="/wiki/Wake-on-ring" title="Wake-on-ring">Wake-on-ring</a></span></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">ROM variants</th><td class="navbox-list-with-group navbox-list navbox-odd hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Read-only_memory" title="Read-only memory">ROM</a></span></li> <li><span class="nowrap"><a href="/wiki/Programmable_ROM" title="Programmable ROM">PROM</a></span></li> <li><span class="nowrap"><a href="/wiki/EPROM" title="EPROM">EPROM</a></span></li> <li><span class="nowrap"><a class="mw-selflink selflink">EEPROM</a></span></li></ul> </div></td></tr><tr><th scope="row" class="navbox-group" style="width:1%">Related</th><td class="navbox-list-with-group navbox-list navbox-even hlist" style="width:100%;padding:0"><div style="padding:0 0.25em"> <ul><li><span class="nowrap"><a href="/wiki/Boot_ROM" title="Boot ROM">Boot ROM</a></span></li> <li><span class="nowrap"><a href="/wiki/ROM_hacking" title="ROM hacking">ROM hacking</a></span></li> <li><span class="nowrap"><a href="/wiki/ROM_image" title="ROM image">ROM image</a></span></li> <li><span class="nowrap"><a href="/wiki/Execute_in_place" title="Execute in place">Execute in place</a></span></li> <li><span class="nowrap"><a href="/wiki/Devicetree" title="Devicetree">Devicetree</a></span></li> <li><span class="nowrap"><a href="/wiki/Fastboot" title="Fastboot">Fastboot</a></span></li> <li><span class="nowrap"><a href="/wiki/Instant-on" title="Instant-on">Instant-on</a></span></li> <li><span class="nowrap"><a href="/wiki/Power-on_self-test" title="Power-on self-test">Power-on self-test</a></span></li> <li><span class="nowrap"><a href="/wiki/Qualcomm_EDL_mode" title="Qualcomm EDL mode">EDL mode</a></span></li></ul> </div></td></tr></tbody></table></div> <div class="navbox-styles"><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1129693374" /><link rel="mw-deduplicated-inline-style" href="mw-data:TemplateStyles:r1236075235" /></div><div role="navigation" class="navbox authority-control" aria-label="Navbox390" style="padding:3px"><table class="nowraplinks hlist navbox-inner" style="border-spacing:0;background:transparent;color:inherit"><tbody><tr><th scope="row" class="navbox-group" style="width:1%"><a href="/wiki/Help:Authority_control" title="Help:Authority control">Authority control databases</a>: National <span class="mw-valign-text-top noprint" typeof="mw:File/Frameless"><a href="https://www.wikidata.org/wiki/Q205908#identifiers" title="Edit this at Wikidata"><img alt="Edit this at Wikidata" src="//upload.wikimedia.org/wikipedia/en/thumb/8/8a/OOjs_UI_icon_edit-ltr-progressive.svg/10px-OOjs_UI_icon_edit-ltr-progressive.svg.png" decoding="async" 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