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class="info"> <span style="padding-right:1em">日期：2024-10-29</span> <span id="hits">阅读：373</span> </div> <div class="introduce">核心提示：作为IFWS的重要分会之一的“ 氮化镓射频电子器件与应用”分会最新报告日程正式出炉，将有来自将有香港科技大学高通光学实验室、高武半导体，小米通讯技术，汇芯通信/国家5G中高频器件创新中心，中国科学技术大学、云塔电子，能讯高能半导体，中国科学院半导体研究所，九峰山实验室，江南大学，中国科学院微电子研究所的专家们分享精彩主题报告。</div><div id="content"><div class="content" id="article"><p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202410/30/095433132.jpg" alt="头图分会-900<em></em>x383" width="668" height="284" /></p> <p>氮化镓射频器件具有高功率、高效率、高可靠性等特点。已经证明在雷达、卫星、通信基站等领域具有非常大的优势，随着5G通信、物联网等新兴应用的发展，氮化镓射频器件市场需求不断增长，前景广阔。</p> <p>2024年11月18-21日，第十届国际第三代半导体论坛（IFWS2024）&第二十一届中国国际半导体照明论坛（SSLCHINA2024）、先进半导体技术应用创新展（CASTAS）将在苏州国际博览中心举办。本届论坛由苏州实验室、第三代半导体产业技术创新战略联盟（CASA）、中关村半导体照明工程研发及产业联盟（CSA）主办，国家第三代半导体技术创新中心（苏州）(NCTIAS)、江苏第三代半导体研究院、北京麦肯桥新材料生产力促进中心有限公司承办。</p> <p>论坛融合聚集产、学、研、用、政、金多个层面的资源，将邀请最具代表性的行业专家、企业家带来最前沿趋势的分享探讨。除了重量级开幕大会，设有五大热点主题技术分会，以及多场产业峰会和先进半导体技术应用创新展，全面聚焦半导体照明及第三代半导体热门领域技术前沿及应用进展。 </p> <p>目前，作为IFWS的重要分会之一的“ 氮化镓射频电子器件与应用”分会最新报告日程正式出炉，本届分会得到了深圳市汇芯通信技术有限公司 /国家5G中高频器件创新中心的协办支持。 中国电子科技集团第五十八所所长蔡树军、苏州能讯高能半导体有限公司总裁张乃千、江南大学教授/宁波铼微半导体总经理敖金平将共同主持分会。</p> <p align="justify">届时，将有香港科技大学高通光学实验室主任、教授、高武半导体（香港）有限公司创始人俞捷，小米通讯技术有限公司高级硬件研发工程师孙跃，深圳市汇芯通信技术有限公司 /国家5G中高频器件创新中心张天辰，中国科学技术大学微电子学院教授、安徽云塔电子科技有限公司创始人左成杰，苏州能讯高能半导体有限公司副总裁裴轶，中国科学院半导体研究所副研究员张连，九峰山实验室熊鑫，江南大学集成电路学院副教授李杨，中国科学院微电子研究所张国祥等多位科研院校知名专家及实力派企业代表共同参与，将围绕氮化镓射频电子器件与应用发展分享主题报告，共同探讨氮化镓功率电子器件技术的前沿发展趋势及最新动向，敬请关注！ </p> <p><b>分会日程详情如下：</b></p> <table border="1" cellspacing="0"> <tbody> <tr> <td width="699" valign="top" colspan="2"> <p align="center"><b>技术分会：氮化镓射频</b><b>电子器件与应用</b></p> <p align="center"><b>Technical Sub-Forum：RF Electro<em></em>nic Devices</b></p> </td> </tr> <tr> <td width="699" valign="top" colspan="2"> <p><b>时间：</b><b>202</b><b>4</b><b>年</b><b>11月</b><b>21</b><b>日</b><b>08</b><b>:</b><b>3</b><b>0-1</b><b>2</b><b>:</b><b>0</b><b>0</b></p> <p><b>地点：</b><b>苏州国际博览中心</b><b>G馆 • G107</b></p> <p><b>Time: </b><b>Nov </b><b>21</b><b>, </b><b>08</b><b>:</b><b>3</b><b>0-1</b><b>2</b><b>:</b><b>0</b><b>0</b></p> <p><b>Location:</b><b> </b><b>Suzhou Internatio<em></em>nal Expo Centre • G107</b></p> </td> </tr> <tr> <td width="699" valign="top" colspan="2"> <p><b>协办单位：深圳市汇芯通信技术有限公司 /国家5G中高频器件创新中心</b></p> </td> </tr> <tr> <td width="699" valign="top" colspan="2"> <p><b>主持人</b><b>          蔡树军-中国电子科技集团第五十八所所长</b></p> <p><b>张乃千-苏州能讯高能半导体有限公司总裁</b></p> <p><b>Moderator</b><b>     敖金平-江南大学教授，宁波铼微半导体总经理</b></p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>0</b><b>8</b><b>:</b><b>25</b><b>-08</b><b>:</b><b>30</b></p> </td> <td width="576" valign="top"> <p><b>嘉宾致辞 </b><b>& </b><b>合影 /</b><b> Opening</b><b> Address</b><b> & </b><b>Group Photo</b><b> Shooting</b></p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>0</b><b>9</b><b>:</b><b>00</b><b>-0</b><b>9</b><b>:</b><b>2</b><b>0</b></p> </td> <td width="576" valign="top"> <p><b>面向未来数据中心和6G网络的下一代高端生态半导体</b></p> <p>Next-Gen High-End Eco-Semico<em></em>nductors for Tomorrow’s Data Centers and 6G Networks</p> <p><b>俞</b><b> </b><b>捷</b>——<b>香港科技大学高通光学实验室主任、教授、高武半导体（香港）有限公司创始人</b></p> <p>Patrick Yue——Professor, <a href="https://ece.hkust.edu.hk/eepatrick">ECE Department</a>,HKUST </p> <p>Director, HKUST-Qualcomm Optical Wireless Lab (<a href="https://yuegroup.hkust.edu.hk/">OWL</a>)</p> <p>Founder of High5 Semico<em></em>nductor (Hong Kong) Ltd.</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>0</b><b>9</b><b>:</b><b>2</b><b>0-0</b><b>9</b><b>:</b><b>4</b><b>0</b></p> </td> <td width="576" valign="top"> <p><b>移动终端射频功放应用问题探讨</b></p> <p>Discussion on RF Power Amplifiers for Handset Applications</p> <p><b>孙跃</b>——<b>小米通讯技术有限公司高级硬件研发工程师</b></p> <p>SUN Yue——Senior Hardware Engineer of Xiaomi Communications Co., Ltd，</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>0</b><b>9:</b><b>4</b><b>0-</b><b>10</b><b>:</b><b>0</b><b>0</b></p> </td> <td width="576" valign="top"> <p><b>同质外延氮化镓射频电子器件研究进展</b></p> <p>薛军帅——西安电子科技大学教授</p> <p>XUE Junshuai——Professor Xidian University</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>10:</b><b>00</b><b>-</b><b>10:</b><b>20</b></p> </td> <td width="576" valign="top"> <p><b>FLAB：特色</b><b>射频</b><b>半导体的技术创新模式探索</b></p> <p>张天辰——深圳市汇芯通信技术有限公司 /国家5G中高频器件创新中心研究员</p> <p>ZHANG Tianchen   </p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>1</b><b>0:</b><b>20</b><b>-10:</b><b>35</b></p> </td> <td width="576" valign="top"> <p><b>茶歇</b> / <b>Coffee Break</b></p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>1</b><b>0:</b><b>3</b><b>5-10:</b><b>55</b></p> </td> <td width="576" valign="top"> <p><b>面向6G和Wi-Fi 7 的高频和宽带射频滤波器</b></p> <p>High-Frequency and Wideband RF Filters for 6G and Wi-Fi 7</p> <p><b>左成杰</b>——<b>中国科学技术大学微电子学院教授、安徽云塔电子科技有限公司创始人</b></p> <p>ZUO Chengjie——Professor of School of Microelectro<em></em>nics at University of Science and Technology of China</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>1</b><b>0:</b><b>55</b><b>-1</b><b>1:15</b></p> </td> <td width="576" valign="top"> <p><b>先进射频氮化镓制造中心支持DC-40GHz MMIC代工</b></p> <p><b>Advanced</b><b> GaN</b><b> RF Manufacturing Center supports DC-40GHz MMIC foundry</b></p> <p>裴轶——苏州能讯高能半导体有限公司副总裁</p> <p>PEI Yi  Vice president of  Dynax Semi-co<em></em>nductor Inc</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b> </b></p> <p><b>1</b><b>1:15-11:30</b></p> </td> <td width="576" valign="top"> <p><b>fT/fmax=10.4/7.1GHz 的蓝宝石上AlGaN/GaN异质结双极晶体管</b></p> <p><b>AlGaN/GaN Heterojunction Bipolar Transistors</b><b> </b><b>On Sapphire With record fT/fmax=10.4/7.1GHz</b></p> <p>张连——中国科学院半导体研究所副研究员</p> <p>ZHANG Lian——Associate Professor of Institute of Semiconductor, CAS</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>1</b><b>1:</b><b>3</b><b>0-11:</b><b>45</b></p> </td> <td width="576" valign="top"> <p><b>3-20 GHz碳化硅基氮化镓超宽带威尔金森功分器</b></p> <p><b>3-20 GHz Ultra-wideband Wilkinson Power DividerCombiner Using GaN on SiC</b></p> <p>熊 鑫——九峰山实验室</p> <p>XIONG Xin  JFS Laboratory</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>1</b><b>1:</b><b>45</b><b>-1</b><b>2</b><b>:</b><b>0</b><b>0</b></p> </td> <td width="576" valign="top"> <p><b>基于氮化镓肖特基二极管的微波无线能量收集</b></p> <p><b>Recent progress on GaN Schottky barrier diode ba<em></em>sed microwave energy harvesting</b></p> <p>李杨——江南大学集成电路学院副教授</p> <p>LI Yang , Associate Professor, School of Integrated Circuits, Jiangnan University</p> </td> </tr> <tr> <td width="122" valign="top"> <p><b>1</b><b>2</b><b>:</b><b>00</b><b>-1</b><b>2:15</b></p> </td> <td width="576" valign="top"> <p><b>基于GaN SBD技术的具有快速恢复性能的大功率微波限幅器High power microwave limiter with fast recovery performance ba<em></em>sed on GaN SBD technology</b></p> <p>张国祥——中国科学院微电子研究所</p> <p>ZHANG Guoxiang  Institute of Microelectronics, Chinese Academy of Sciences</p> </td> </tr> </tbody> </table> <p> </p> <p><img src="http://www.casmita.com/file/upload/202410/30/095457202.jpg" alt="日程总览中文_v1_1" width="668" 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