Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures

<!DOCTYPE html> <html lang="en" dir="ltr"> <head> <meta name="format-detection" content="telephone=no"> <meta name="viewport" content="width=device-width, initial-scale=1.0" /> <meta charset="utf-8"> <meta http-equiv="X-UA-Compatible" content="IE=edge"> <link rel="canonical" href="https://www.scientific.net/MSF.1124.57" /> <meta property="og:title" content="Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures | Scientific.Net" /> <meta property="og:type" content="website" /> <meta property="og:url" content="https://www.scientific.net/MSF.1124.57" /> <meta property="og:image" content="/Content/app/scinet5/images/metadata_logo.png" /> <meta property="og:image:type" content="image/png" /> <meta property="og:image:width" content="261" /> <meta property="og:image:height" content="260" /> <meta property="og:image:alt" content="Scientific.Net Logo" /> <meta name="citation_language" content="en" /> <meta name="citation_publisher" content="Trans Tech Publications Ltd" /> <meta name="citation_title" content="Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures" /> <meta name="citation_publication_date" content="2024" /> <meta name="citation_online_date" content="2024/08/21" /> <meta name="citation_journal_title" content="Materials Science Forum" /> <meta name="citation_issn" content="1662-9752" /> <meta name="citation_volume" content="1124" /> <meta name="citation_firstpage" content="57" /> <meta name="citation_lastpage" content="65" /> <meta name="citation_pdf_url" content="https://www.scientific.net/MSF.1124.57.pdf" /> <meta name="citation_abstract_html_url" content="https://www.scientific.net/MSF.1124.57" /> <meta name="citation_keywords" content="Electrical Characterization;Ion Slicing;Layer Transfer;SiC-on-Insulator (SiCOI);Smart Cut™" /> <meta name="citation_doi" content="10.4028/p-yDH8Qb" /> <meta name="citation_fulltext_world_readable" content="" /> <meta name="citation_author" content="Guillaume Gelineau" /> <meta name="citation_author" content="Cédric Masante" /> <meta name="citation_author" content="Emmanuel Rolland" /> <meta name="citation_author" content="Sophie Barbet" /> <meta name="citation_author" content="Lucie Corbin" /> <meta name="citation_author" content="Anne-Marie Papon" /> <meta name="citation_author" content="Simon Caridroit" /> <meta name="citation_author" content="Mathieu Delcroix" /> <meta name="citation_author" content="Stéphanie Huet" /> <meta name="citation_author" content="Alexandre Moulin" /> <meta name="citation_author" content="Vladimir S. 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Berlin, Germany: Heidelberg GmbH, 2004." /> <meta name="citation_reference" content="M. E. Bathen et al., ournal of. Applied Physics, vol. 127, p.085701, 2020." /> <meta name="person" content="Guillaume Gelineau, Cédric Masante, Emmanuel Rolland, Sophie Barbet, Lucie Corbin, Anne-Marie Papon, Simon Caridroit, Mathieu Delcroix, Stéphanie Huet, Alexandre Moulin, Vladimir S. Prudkovskiy, Nicolas Troutot, Séverin Rouchier, Loic Turchetti, Karine Mony, Julie Widiez" /> <meta name="description" content="SiC-on-Insulator (SiCOI) structures fabricated using the Smart Cut™ technique can be of great interest in order to probe the properties of a silicon carbide (SiC) transferred layer, by electrically insulating it from the receiver substrate. In this study, we report the fabrication of such a SiCOI structure using a SiC receiver, as well as its electrical and TEM characterization after high temperature annealing. We highlight a decrease of the transferred layer electrical resistivity with increasing annealing temperature, due to doping reactivation and electron mobility enhancement. After low temperature annealing (1200°C to 1400°C), deep acceptor levels, possibly located in a damaged region near the substrate’s surface, might be responsible of a non negligible electrical compensation. Beyond 1400°C however, the transferred SiC crystal is healed and electron transport is only subjected to shallow nitrogen ionization." /> <meta name="keywords" content="Electrical Characterization, Ion Slicing, Layer Transfer, SiC-on-Insulator (SiCOI), Smart Cut™" /> <title>Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures | Scientific.Net</title> <link href="/Content/app/scinet5/images/favicon.ico" rel="shortcut icon" /> <link href="/Content/public.min.css?v=BKBihgCkUm340JBGsNjEPtWz8I22CUsubMPC3V1WYzw" rel="stylesheet" /> <link rel="preconnect" href="https://www.google-analytics.com"> <link rel="preconnect" href="https://www.gstatic.com"> <link rel="preconnect" href="https://www.googletagmanager.com"> <link rel="icon" href="/Content/app/scinet5/images/favicon.ico"> <link rel="apple-touch-icon" href="/Content/app/scinet5/images/apple-touch-icon.png"> <link rel="preconnect" 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href="/MSF.1124">Materials Science Forum Vol. 1124</a><i class="inline-icon arrow-breadcrumbs"></i><span class="bread-crumbs-second">Investigations on the Recovery of the Electrical...</span></div> <div class="page-name-block underline-begin"> <h1 class="page-name-block-text">Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures</h1> </div> <div class="paper-statistics"> <div class="loading"> <i class="inline-icon download-and-visitor-statistics-icon"></i> <span class="normal-text" id="paperDownloadsAndVisitorsCount"></span> </div> </div> <div class="clearfix"></div> <div class="page-paper-title"> <div class="preview-block"> <img alt="Article Preview" width="128" height="180" src="/MSF.1124.57/thumbnail.gif"> <div id="preview-button" data-url-preview-log="/Paper/PreviewImageLog?paperId=605644"> <i class="inline-icon preview-icon"></i> </div>  <div id="paper-preview-modal" class="modal fade"> <div 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In this study, we report the fabrication of such a SiCOI structure using a SiC receiver, as well as its electrical and TEM characterization after high temperature annealing. We highlight a decrease of the transferred layer electrical resistivity with increasing annealing temperature, due to doping reactivation and electron mobility enhancement. After low temperature annealing (1200°C to 1400°C), deep acceptor levels, possibly located in a damaged region near the substrate’s surface, might be responsible of a non negligible electrical compensation. Beyond 1400°C however, the transferred SiC crystal is healed and electron transport is only subjected to shallow nitrogen ionization. </p> </div> <div class="paper-access-buttons col-xs-12"> <div class="row"> <div class="two-buttons"> <a id="ask-by-email-button" href="#" class="button button-160 button-grey icon-container" data-url="/Paper/_AskByEmail?JournalId=4&TitleId=7246&PaperId=605644"> <span class="inline-element">By email</span> <i class="inline-icon mail-icon-grey button-email-icon button-icon-right"></i> </a> <a id="downloadPdfButton" href="/MSF.1124.57.pdf" class="button button-160"> <span class="inline-element">View Pdf</span> <i class="inline-icon pdf-icon button-icon-right"></i> </a> </div>  <div id="ask-by-email-modal" class="modal fade" tabindex="-1" role="dialog"></div>  </div> </div> <div id="div_plpixel" style="display: none;"></div> <div class="clearfix"></div> <div class="connected-title-container"> <div class="connected-title-text semibold-middle-text">You might 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