<?xml version="1.0" encoding="UTF-8"?> <article key="pdf/10004883" mdate="2016-05-02 00:00:00"> <author>G. Korotcenkov and V. Brinzari and B. K. Cho</author> <title>Electrophysical and Thermoelectric Properties of Nanoscaled In2O3Sn, Zn, GaBased Thin Films Achievements and Limitations for Thermoelectric Applications</title> <pages>884 - 888</pages> <year>2016</year> <volume>10</volume> <number>7</number> <journal>International Journal of Electrical and Computer Engineering</journal> <ee>https://publications.waset.org/pdf/10004883</ee> <url>https://publications.waset.org/vol/115</url> <publisher>World Academy of Science, Engineering and Technology</publisher> <abstract>The thermoelectric properties of nanoscaled In2O3Sn films deposited by spray pyrolysis are considered in the present report. It is shown that multicomponent In2O3Snbased films are promising material for the application in thermoelectric devices. It is established that the increase in the efficiency of thermoelectric conversion at CSn5 occurred due to nanoscaled structure of the films studied and the effect of the grain boundary filtering of the low energy electrons. There are also analyzed the limitations that may appear during such material using in devices developed for the market of thermoelectric generators and refrigerators. Studies showed that the stability of nanoscaled film&amp;amp;rsquo;s parameters is the main problem which can limit the application of these materials in high temperature thermoelectric converters.</abstract> <index>Open Science Index 115, 2016</index> </article>