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href="http://www.casmita.com/video/202305/22/557398.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="昂瑞微电子副总经理黄鑫：国产突破，中国射频前端产业引领5G 芯时代" src="https://vod.jizhi.top/snapshot/d4426470f40871edbfbe0764a0ec010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">昂瑞微电子副总经理黄鑫：国产突破，中国射频前端产业引领5G 芯时代</p><p class="num"><span class="play"><i class="icon"></i>1025</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557398.html" target="_blank" title="昂瑞微电子副总经理黄鑫：国产突破，中国射频前端产业引领5G 芯时代" class="title">昂瑞微电子副总经理黄鑫：国产突破，中国射频前端产业引领5G 芯时代</a><div class="v-desc">国产突破，中国射频前端产业引领5G 芯时代Domestic breakthrough, China's RF front-end industry leads the 5G Chip era黄鑫北京昂瑞微电子技术股份有限公司副总经理HUANG XinVice General Manager 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class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">山东大学新一代半导体材料研究院研究员崔鹏：电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs</p><p class="num"><span class="play"><i class="icon"></i>1086</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557397.html" target="_blank" title="山东大学新一代半导体材料研究院研究员崔鹏：电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs" class="title">山东大学新一代半导体材料研究院研究员崔鹏：电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTs</a><div class="v-desc">电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University</div><div class="v-info"><span class="v-info-i"><i title="观看" class="b-icon b-icon-v-play"></i><span>1086</span></span><span class="v-info-i"><i title="评论" class="b-icon 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class="v-date">2023-05-22 15:15</span></div></div></div></li> <li><div class="l-item"><div class="l"><div class="spread-module"><a href="http://www.casmita.com/video/202305/22/557391.html" target="_blank"><div class="pic"><div class="lazy-img"><img alt="澳大利亚麦考瑞大学教授Sourabh KHANDELWAL：Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM" src="https://vod.jizhi.top/snapshot/672bfee0f3ff71edba9c6633b79f010200005.jpg"></div><i class="icon medal "></i><div class="cover-preview-module"><div class="progress-bar"><span style="width: 0%;"></span></div></div><div class="mask-video"></div><div class="danmu-module"></div><span class="dur"></span></div><p class="t">澳大利亚麦考瑞大学教授Sourabh KHANDELWAL：Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM</p><p class="num"><span class="play"><i class="icon"></i>779</span><span class="danmu"><i class="icon"></i>0</span></p></a></div></div><div class="r"><a href="http://www.casmita.com/video/202305/22/557391.html" 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