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Gallium doping</title> <meta name="description" content="Search results for: effects of Gallium doping"> <meta name="keywords" content="effects of Gallium doping"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="effects of Gallium doping"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 10985</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: effects of Gallium doping</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10985</span> First Principle study of Electronic Structure of Silicene Doped with Galium </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mauludi%20Ariesto%20Pamungkas">Mauludi Ariesto Pamungkas</a>, <a href="https://publications.waset.org/abstracts/search?q=Wafa%20Maftuhin"> Wafa Maftuhin</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Gallium with three outer electrons commonly are used as dopants of silicon to make it P type and N type semiconductor respectively. Silicene, one-atom-thick silicon layer is one of emerging two dimension materials after the success of graphene. The effects of Gallium doping on electronic structure of silicine are investigated by using first principle calculation based on Density Functional Theory (DFT) calculation and norm conserving pseudopotential method implemented in ABINIT code. Bandstructure of Pristine silicene is similar to that of graphene. Effect of Ga doping on bandstructure of silicene depend on the position of Ga adatom on silicene <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=silicene" title="silicene">silicene</a>, <a href="https://publications.waset.org/abstracts/search?q=effects%20of%20Gallium%20doping" title=" effects of Gallium doping"> effects of Gallium doping</a>, <a href="https://publications.waset.org/abstracts/search?q=Density%20Functional%20Theory%20%28DFT%29" title=" Density Functional Theory (DFT)"> Density Functional Theory (DFT)</a>, <a href="https://publications.waset.org/abstracts/search?q=graphene" title=" graphene"> graphene</a> </p> <a href="https://publications.waset.org/abstracts/21783/first-principle-study-of-electronic-structure-of-silicene-doped-with-galium" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/21783.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">433</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10984</span> Electrical Characterization of Hg/n-bulk GaN Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Nabil">B. Nabil</a>, <a href="https://publications.waset.org/abstracts/search?q=O.%20Zahir"> O. Zahir</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20Abdelaziz"> R. Abdelaziz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We present the results of electrical characterizations current-voltage and capacity-voltage implementation of a method of making a Schottky diode on bulk gallium nitride doped n. We made temporary Schottky contact of Mercury (Hg) and an ohmic contact of silver (Ag), the electrical characterizations current-voltage (I-V) and capacitance-voltage (C-V) allows us to determine the difference parameters of our structure (Hg /n-GaN) as the barrier height (ΦB), the ideality factor (n), the series resistor (Rs), the voltage distribution (Vd), the doping of the substrate (Nd) and density of interface states (Nss). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bulk%20Gallium%20nitride" title="Bulk Gallium nitride">Bulk Gallium nitride</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20characterization" title=" electrical characterization"> electrical characterization</a>, <a href="https://publications.waset.org/abstracts/search?q=Schottky%20diode" title=" Schottky diode"> Schottky diode</a>, <a href="https://publications.waset.org/abstracts/search?q=series%20resistance" title=" series resistance"> series resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=substrate%20doping" title=" substrate doping"> substrate doping</a> </p> <a href="https://publications.waset.org/abstracts/1498/electrical-characterization-of-hgn-bulk-gan-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/1498.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">485</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10983</span> High Quality Gallium Oxide Microstructures by Catalyst-Free Thermal Oxidation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jiang-Bei%20Qin">Jiang-Bei Qin</a>, <a href="https://publications.waset.org/abstracts/search?q=Rui-Xia%20Miao"> Rui-Xia Miao</a>, <a href="https://publications.waset.org/abstracts/search?q=Wei%20Ren"> Wei Ren</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, high crystalline gallium oxide microstructures (wires, belts, and sheets) were synthesized by catalyst-free thermal oxidation. Structural studies such as X-ray diffraction, Raman and transmission electron microscope (TEM) investigations on the microstructures showed monoclinic phase of gallium oxide and single crystalline structure. The scanning electron microscopy (SEM) observations revealed that a huge super microsheet even grows up to 450 µm in length and 206 µm in width. Gallium oxide microstructures exhibit high crystallinity along (002) and (401), respectively. The PL spectrum of these microstructures excites a blue light band centered at 441 and 489nm. The growth mechanism of gallium oxide microstructures is discussed. These gallium oxide microstructures have great potential in functional devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=catalyst-free" title="catalyst-free">catalyst-free</a>, <a href="https://publications.waset.org/abstracts/search?q=gallium%20oxide" title=" gallium oxide"> gallium oxide</a>, <a href="https://publications.waset.org/abstracts/search?q=microstructures" title=" microstructures"> microstructures</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20oxide" title=" thermal oxide"> thermal oxide</a> </p> <a href="https://publications.waset.org/abstracts/144556/high-quality-gallium-oxide-microstructures-by-catalyst-free-thermal-oxidation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/144556.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">189</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10982</span> Investigation Of Eugan's, Optical Properties With Dft</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bahieddine.%20Bouabdellah">Bahieddine. Bouabdellah</a>, <a href="https://publications.waset.org/abstracts/search?q=Benameur.%20Amiri"> Benameur. Amiri</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdelkader.nouri"> Abdelkader.nouri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Europium-doped gallium nitride (EuGaN) is a promising material for optoelectronic and thermoelectric devices. This study investigates its optical properties using density functional theory (DFT) with the FP-LAPW method and MBJ+U correction. The simulation substitutes a gallium atom with europium in a hexagonal GaN lattice (6% doping). Distinct absorption peaks are observed in the optical analysis. These results highlight EuGaN's potential for various applications and pave the way for further research on rare earth-doped materials. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=eugan" title="eugan">eugan</a>, <a href="https://publications.waset.org/abstracts/search?q=fp-lapw" title=" fp-lapw"> fp-lapw</a>, <a href="https://publications.waset.org/abstracts/search?q=dft" title=" dft"> dft</a>, <a href="https://publications.waset.org/abstracts/search?q=wien2k" title=" wien2k"> wien2k</a>, <a href="https://publications.waset.org/abstracts/search?q=mbj%20hubbard" title=" mbj hubbard"> mbj hubbard</a> </p> <a href="https://publications.waset.org/abstracts/185924/investigation-of-eugans-optical-properties-with-dft" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/185924.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">66</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10981</span> Effect of Precursor’s Grain Size on the Conversion of Microcrystalline Gallium Antimonide GaSb to Nanocrystalline Gallium Nitride GaN</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jerzy%20F.%20Janik">Jerzy F. Janik</a>, <a href="https://publications.waset.org/abstracts/search?q=Mariusz%20Drygas"> Mariusz Drygas</a>, <a href="https://publications.waset.org/abstracts/search?q=Miroslaw%20M.%20Bucko"> Miroslaw M. Bucko</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A simple precursor system has been recently developed in our laboratory for the conversion of affordable microcrystalline gallium antimonide GaSb to a range of nanocrystalline powders of gallium nitride GaN – a wide bandgap semiconductor indispensable in modern optoelectronics. The process relies on high temperature nitridation reactions of GaSb with ammonia. Topochemical relationships set up by the cubic lattice of GaSb result in some metastable cubic GaN formed in addition to the stable hexagonal GaN. A prior application of high energy ball milling to the initially microcrystalline GaSb precursor is shown to alter the nitridation output. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nanocrystalline" title="nanocrystalline">nanocrystalline</a>, <a href="https://publications.waset.org/abstracts/search?q=gallium%20nitride" title=" gallium nitride"> gallium nitride</a>, <a href="https://publications.waset.org/abstracts/search?q=GaN" title=" GaN"> GaN</a>, <a href="https://publications.waset.org/abstracts/search?q=gallium%20antimonide" title=" gallium antimonide"> gallium antimonide</a>, <a href="https://publications.waset.org/abstracts/search?q=GaSb" title=" GaSb"> GaSb</a>, <a href="https://publications.waset.org/abstracts/search?q=nitridation" title=" nitridation"> nitridation</a>, <a href="https://publications.waset.org/abstracts/search?q=ball%20milling" title=" ball milling"> ball milling</a> </p> <a href="https://publications.waset.org/abstracts/18150/effect-of-precursors-grain-size-on-the-conversion-of-microcrystalline-gallium-antimonide-gasb-to-nanocrystalline-gallium-nitride-gan" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/18150.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">400</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10980</span> To Investigate the Effects of Potassium Ion Doping and Oxygen Vacancies in Thin-Film Transistors of Gallium Oxide-Indium Oxide on Their Electrical</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Peihao%20Huang">Peihao Huang</a>, <a href="https://publications.waset.org/abstracts/search?q=Chun%20Zhao"> Chun Zhao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Thin-film transistors(TFTs) have the advantages of low power consumption, short reaction time, and have high research value in the field of semiconductors, based on this reason, people have focused on gallium oxide-indium oxide thin-film transistors, a relatively common thin-film transistor, elaborated and analyzed his production process, "aqueous solution method", explained the purpose of each step of operation, and finally explored the influence of potassium ions doped in the channel layer on the electrical properties of the device, as well as the effect of oxygen vacancies on its switching ratio and memory, and summarized the conclusions. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=aqueous%20solution" title="aqueous solution">aqueous solution</a>, <a href="https://publications.waset.org/abstracts/search?q=oxygen%20vacancies" title=" oxygen vacancies"> oxygen vacancies</a>, <a href="https://publications.waset.org/abstracts/search?q=switch%20ratio" title=" switch ratio"> switch ratio</a>, <a href="https://publications.waset.org/abstracts/search?q=thin-film%20transistor%28TFT%29" title=" thin-film transistor(TFT)"> thin-film transistor(TFT)</a> </p> <a href="https://publications.waset.org/abstracts/171155/to-investigate-the-effects-of-potassium-ion-doping-and-oxygen-vacancies-in-thin-film-transistors-of-gallium-oxide-indium-oxide-on-their-electrical" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/171155.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">115</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10979</span> Ethical Aspects of the Anti-Doping System Management in Poland and in Global Framework</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Malgorzata%20Kurleto">Malgorzata Kurleto</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This study is trying to analyse the organization of the anti-doping system globally (particularly in Poland). The analysis is going to show the concept of doping, indicating the types of doping, and list of banned substances and methods. The paper discusses ethical aspects of the global anti-doping system. The analysis is focusing on organization of global Anti-Doping Agency. The paper will try to describe the basic assumptions of regulations adopted by WADA, called "standards” as well organization and functioning of the Polish Anti-Doping Agency (including the legal basis: POLADA). The base for this discuss will be the Polish 2018 annual report, which shows the most important assumptions, implementation and the number of anti-doping proceedings conducted in Poland. The aim of this paper is to show ethical arguments on anti-doping management strategies. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=anti-doping" title="anti-doping">anti-doping</a>, <a href="https://publications.waset.org/abstracts/search?q=ethical%20dilemmas" title=" ethical dilemmas"> ethical dilemmas</a>, <a href="https://publications.waset.org/abstracts/search?q=sports%20doping" title=" sports doping"> sports doping</a>, <a href="https://publications.waset.org/abstracts/search?q=WADA" title=" WADA"> WADA</a>, <a href="https://publications.waset.org/abstracts/search?q=POLADA" title=" POLADA"> POLADA</a> </p> <a href="https://publications.waset.org/abstracts/119230/ethical-aspects-of-the-anti-doping-system-management-in-poland-and-in-global-framework" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/119230.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">130</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10978</span> A Spectroscopic Study by Photoluminescence of Erbium in Gallium Nitride</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20Melouah">A. Melouah</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Diaf"> M. Diaf</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The III-N nitride semiconductors appear to be excellent host materials, in particular, GaN epilayers doped with Erbium ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable stability may be due to the large energy band gap of the material. Two methods are used for doping the Gallium nitride films with Erbium ions; ion implantation in the wafers obtained by (CVDOM) and in-situ incorporation during epitaxial growth of the layers by (MBE). Photoluminescence (PL) spectroscopy has been the main optical technique used to characterize the emission of Er-doped III-N semiconductor materials. This technique involves optical excitation of Er3+ ions and measurement of the spectrum of the light emission as a function of energy (wavelength). Excitation at above band gap energy leads to the creation of Electron-Hole pairs. Some of this pairs may transfer their energy to the Er3+ ions, exciting the 4f-electrons and resulting in optical emission. This corresponds to an indirect excitation of the Er3+ ions by electron-hole pairs. The direct excitation by the optical pumping of the radiation can be obtained. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=photoluminescence" title="photoluminescence">photoluminescence</a>, <a href="https://publications.waset.org/abstracts/search?q=Erbium" title=" Erbium"> Erbium</a>, <a href="https://publications.waset.org/abstracts/search?q=GaN" title=" GaN"> GaN</a>, <a href="https://publications.waset.org/abstracts/search?q=semiconductor%20%20materials" title=" semiconductor materials"> semiconductor materials</a> </p> <a href="https://publications.waset.org/abstracts/46060/a-spectroscopic-study-by-photoluminescence-of-erbium-in-gallium-nitride" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/46060.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">414</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10977</span> The Use of Actoprotectors by Professional Athletes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kalin%20Ivanov">Kalin Ivanov</a>, <a href="https://publications.waset.org/abstracts/search?q=Stanislava%20Ivanova"> Stanislava Ivanova</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Actoprotectors are substances with hight performance enchasing potential and hight antioxidant activity. Most of these drugs have been developed in USSR for military medicine purposes. Based on their chemical composition actoprotectors could be classified into three categories: benzimidazole derivatives (ethomersol, bemitil); adamantane derivatives (bromantane), other chemical classes. First data for intake of actoprotectors from professional athletes is from 1980. The daily intake of actoprotectors demonstrate many benefits for athletes like: positive effect on the efficiency of physical work, antihypoxic effects, antioxidant effects, nootropic effects, rapid recovery. Since 1997, bromantane is considered as doping. This is a result of Summer Olympic Games in Athlanta (1996) when several Russian athletes tested positive for bramantane. Even the drug is safe for athletes health its use is considered as violation of anti- doping rules. More than 37 years bemetil has been used by professional athletes with no risk but currently it is included in WADA monitoring programme for 2018. Current perspectives are that most used actoprotectors would be considered as doping. Many clinical studies have confirmed that intake of bemitil and bromantan demonstrate positive influence on the physical work capacity but data for other actoprotectors like chlodantane, ademol, ethomersol is limited. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=actoprotector" title="actoprotector">actoprotector</a>, <a href="https://publications.waset.org/abstracts/search?q=sport" title=" sport"> sport</a>, <a href="https://publications.waset.org/abstracts/search?q=doping" title=" doping"> doping</a>, <a href="https://publications.waset.org/abstracts/search?q=bemitil" title=" bemitil"> bemitil</a> </p> <a href="https://publications.waset.org/abstracts/85179/the-use-of-actoprotectors-by-professional-athletes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/85179.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">322</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10976</span> Evolution of Structure and Magnetic Behavior by Pr Doping in SrRuO3</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Renu%20Gupta">Renu Gupta</a>, <a href="https://publications.waset.org/abstracts/search?q=Ashim%20K.%20Pramanik"> Ashim K. Pramanik</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We report the evolution of structure and magnetic properties in perovskite ruthenates Sr1-xPrxRuO3 (x = 0.0 and 0.1). Our main expectations, to induce the structural modification and change the Ru charge state by Pr doping at Sr site. By the Pr doping on Sr site retains orthorhombic structure while we find a minor change in structural parameters. The SrRuO3 have itinerant type of ferromagnetism with ordering temperature ~160 K. By Pr doping, the magnetic moment decrease and ZFC show three distinct peaks (three transition temperature; TM1, TM2 and TM3). Further analysis of magnetization of both samples, at high temperature follow modified CWL and Pr doping gives Curie temperature ~ 129 K which is close to TM2. Above TM2 to TM3, the inverse susceptibility shows upward deviation from CW behavior, indicating the existence AFM like clustered in this regime. The low-temperature isothermal magnetization M (H) shows moment decreases by Pr doping. The Arrott plot gives spontaneous magnetization (Ms) which also decreases by Pr doping. The evolution of Rhodes-Wohlfarth ratio increases which suggests the FM in this system evolves toward the itinerant type by Pr doping. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=itinerant%20ferromagnet" title="itinerant ferromagnet">itinerant ferromagnet</a>, <a href="https://publications.waset.org/abstracts/search?q=Perovskite%20structure" title=" Perovskite structure"> Perovskite structure</a>, <a href="https://publications.waset.org/abstracts/search?q=Ruthenates" title=" Ruthenates"> Ruthenates</a>, <a href="https://publications.waset.org/abstracts/search?q=Rhodes-Wohlfarth%20ratio" title=" Rhodes-Wohlfarth ratio"> Rhodes-Wohlfarth ratio</a> </p> <a href="https://publications.waset.org/abstracts/69743/evolution-of-structure-and-magnetic-behavior-by-pr-doping-in-srruo3" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/69743.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">357</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10975</span> The Knowledge and Attitude of Doping among Junior Athletes and Coaches in Sri Lanka</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mahadula%20I.%20P.%20Kumari">Mahadula I. P. Kumari</a>, <a href="https://publications.waset.org/abstracts/search?q=Kasturiratne%20%20A."> Kasturiratne A.</a>, <a href="https://publications.waset.org/abstracts/search?q=De%20Silva%20AP"> De Silva AP</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Doping refers to an athlete's use of banned substances as a method to improve training and performance in sports. It is known that some young athletes use banned substances in Sri Lanka without knowing their side effects and associated health risks. The main objective of this study was to describe the level of knowledge and attitude among junior athletes and coaches on doping in sports. This is a descriptive cross-sectional study. Four individual sports and six team sports were taken into the study. Schools were selected considering the results of the all-island school sports competitions 2017. Two hundred sixty-two female athletes, 290 male athletes and 30 coaches representing all sports counted into this study. The data collection method was a self-administered questionnaire and SPSS Version 21 was used for the data analysis. According to the result, 79% of athletes have heard of the term "doping," and 21% have never heard of it. This means these children have not been educated on doping. A number of questions were asked to study the level of knowledge of the coaches and players. Those who answered the questions correctly were given a mark. According to the marks, it is evident that the level of knowledge of the players and coaches is very low. All athletes and coaches do not accept the use of banned substances. This shows that athletes and coaches have a good attitude about winning without cheating. It was evident that athletes in athletics, weightlifting, rugby, and badminton had some level of knowledge about banned substances. All coaches stated that school athletes and coaches do not have sufficient knowledge of banned substances. And they should be made aware of it. This study has revealed that school/Junior athletes and coaches have limited knowledge of banned substances. School children and coaches need to be educated about banned substances and their harmful effects. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=attitude" title="attitude">attitude</a>, <a href="https://publications.waset.org/abstracts/search?q=doping" title=" doping"> doping</a>, <a href="https://publications.waset.org/abstracts/search?q=knowledge" title=" knowledge"> knowledge</a>, <a href="https://publications.waset.org/abstracts/search?q=Sri%20Lanka" title=" Sri Lanka"> Sri Lanka</a> </p> <a href="https://publications.waset.org/abstracts/141321/the-knowledge-and-attitude-of-doping-among-junior-athletes-and-coaches-in-sri-lanka" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/141321.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">249</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10974</span> An Analysis of Legal and Ethical Implications of Sports Doping in India</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Prathyusha%20Samvedam">Prathyusha Samvedam</a>, <a href="https://publications.waset.org/abstracts/search?q=Hiranmaya%20Nanda"> Hiranmaya Nanda</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Doping refers to the practice of using drugs or practices that enhance an athlete's performance. This is a problem that occurs on a worldwide scale and compromises the fairness of athletic tournaments. There are rules that have been created on both the national and international levels in order to prevent doping. However, these rules sometimes contradict one another, and it is possible that they don't do a very good job of prohibiting people from using PEDs. This study will contend that India's inability to comply with specific Code criteria, as well as its failure to satisfy "best practice" standards established by other countries, demonstrates a lack of uniformity in the implementation of anti-doping regulations and processes among nations. Such challenges have the potential to undermine the validity of the anti-doping system, particularly in developing nations like India. This article on the legislative framework in India governing doping in sports is very important. To begin, doping in sports is a significant problem that affects the spirit of fair play and sportsmanship. Moreover, it has the potential to jeopardize the integrity of the sport itself. In addition, the research has the potential to educate policymakers, sports organizations, and other stakeholders about the current legal framework and how well it discourages doping in athletic competitions. This article is divided into four distinct sections. The first section offers an explanation of what doping is and provides some context about its development throughout time. Followed the role of anti-doping authorities and the responsibilities they perform are investigated. Case studies and the research technique that will be employed for the study are in the third section; finally, the results are presented in the last section. In conclusion, doping is a severe problem that endangers the honest competition that exists within sports. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=sports%20law" title="sports law">sports law</a>, <a href="https://publications.waset.org/abstracts/search?q=doping" title=" doping"> doping</a>, <a href="https://publications.waset.org/abstracts/search?q=NADA" title=" NADA"> NADA</a>, <a href="https://publications.waset.org/abstracts/search?q=WADA" title=" WADA"> WADA</a>, <a href="https://publications.waset.org/abstracts/search?q=performance%20enhancing%20drugs" title=" performance enhancing drugs"> performance enhancing drugs</a>, <a href="https://publications.waset.org/abstracts/search?q=anti-doping%20bill%202022" title=" anti-doping bill 2022"> anti-doping bill 2022</a> </p> <a href="https://publications.waset.org/abstracts/168248/an-analysis-of-legal-and-ethical-implications-of-sports-doping-in-india" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/168248.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">72</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10973</span> Attitude towards Doping of High-Performance Athletes in a Sports Institute of the City of Medellin, Colombia </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yuban%20Sebastian%20Cuartas-Agudelo">Yuban Sebastian Cuartas-Agudelo</a>, <a href="https://publications.waset.org/abstracts/search?q=Sandra%20Marcela%20L%C3%B3pez-Hincapi%C3%A9"> Sandra Marcela López-Hincapié</a>, <a href="https://publications.waset.org/abstracts/search?q=Vivianna%20Alexandra%20Garrido-Altamar"> Vivianna Alexandra Garrido-Altamar</a>, <a href="https://publications.waset.org/abstracts/search?q=Mar%C3%ADa%20de%20los%20%C3%81ngeles%20Rodr%C3%ADguez-G%C3%A1zquez"> María de los Ángeles Rodríguez-Gázquez</a>, <a href="https://publications.waset.org/abstracts/search?q=Camilo%20Ruiz-Mej%C3%ADa"> Camilo Ruiz-Mejía</a>, <a href="https://publications.waset.org/abstracts/search?q=Lina%20Mar%C3%ADa%20Mart%C3%ADnez-S%C3%A1nchez"> Lina María Martínez-Sánchez</a>, <a href="https://publications.waset.org/abstracts/search?q=Gloria%20In%C3%A9s%20Mart%C3%ADnez-Dom%C3%ADnguez"> Gloria Inés Martínez-Domínguez</a>, <a href="https://publications.waset.org/abstracts/search?q=Luis%20Eduardo%20Contreras"> Luis Eduardo Contreras</a>, <a href="https://publications.waset.org/abstracts/search?q=Felipe%20Eduardo%20Marino-Isaza"> Felipe Eduardo Marino-Isaza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Introduction: Doping is a prohibited practice in competitive sports with potential adverse effects; therefore, it is crucial to describe the attitudes of athletes towards this behavior and to determine which o these increase the susceptibility to carry out this practice. Objective: To determine the attitude of high-performance athletes towards doping in a sports institute in the city of Medellin, Colombia. Methods: We performed a cross-sectional study during 2016, with a sample taken to convenience consisting of athletes over 18 years old enrolled in a sports institute of the city of Medellin (Colombia). The athletes filled by themselves the Petroczi and Aidman questionnaire: Performance Enhancement Attitude Scale (PEAS) adapted to the Spanish language by Morente-Sánchez et al. This scale has 17 items with likert answer options, with a score ranging from 1 to 6, with a higher score indicating a stronger tendency towards doping practices. Results: 112 athletes were included with an average age of 21.6 years old, a 60% of them were male and the most frequent sports were karate 17%, judo 12.5% and athletics 9.8%. The average score of the questionnaire was 35.5 points of a 102 possible points. The lowest score was obtained in the following items: Is Doping necessary 1,4 and Doping isn’t cheating, everyone does it 1,5. Conclusion: In our population, there is a low tendency towards doping practices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=sports" title="sports">sports</a>, <a href="https://publications.waset.org/abstracts/search?q=doping%20in%20sports" title=" doping in sports"> doping in sports</a>, <a href="https://publications.waset.org/abstracts/search?q=athletic%20performance" title=" athletic performance"> athletic performance</a>, <a href="https://publications.waset.org/abstracts/search?q=attitude" title=" attitude"> attitude</a> </p> <a href="https://publications.waset.org/abstracts/93827/attitude-towards-doping-of-high-performance-athletes-in-a-sports-institute-of-the-city-of-medellin-colombia" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/93827.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">230</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10972</span> Two-Dimensional Transition Metal Dichalcogenides for Photodetection and Biosensing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mariam%20Badmus">Mariam Badmus</a>, <a href="https://publications.waset.org/abstracts/search?q=Bothina%20Manasreh"> Bothina Manasreh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Transition metal dichalcogenides (TMDs) have gained significant attention as two-dimensional (2D) materials due to their intrinsic band gaps and unique properties, which make them ideal candidates for electronic and photonic applications. Unlike graphene, which lacks a band gap, TMDs (MX₂, where M is a transition metal and X is a chalcogen such as sulfur, selenium, or tellurium) exhibit semiconductor behavior and can be exfoliated into monolayers, enhancing their properties. The properties of these materials are investigated using density functional theory, a quantum mechanical computational method to solve Schrodinger equation for many body problems to calculate electron density of the atoms involved on which the energy and properties of a system depend. They show promise for use in photodetectors, biosensors, memory devices, and other technologies in communications, health, and energy sectors. In particular, metallic TMDs, which lack an intrinsic band gap, benefit from doping with transition metals, this improves their electronic and optical properties. Doping monolayer TMDs yields more significant improvements than doping bulk materials. Notably, doping with metals such as vanadium enhances the magnetization of TMDs, expanding their potential applications in spintronics. This work highlights the effects of doping on TMDs and explores strategies for optimizing their performance for advanced technological applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=concentration" title="concentration">concentration</a>, <a href="https://publications.waset.org/abstracts/search?q=doping" title=" doping"> doping</a>, <a href="https://publications.waset.org/abstracts/search?q=magnetization" title=" magnetization"> magnetization</a>, <a href="https://publications.waset.org/abstracts/search?q=monolayer" title=" monolayer"> monolayer</a> </p> <a href="https://publications.waset.org/abstracts/193868/two-dimensional-transition-metal-dichalcogenides-for-photodetection-and-biosensing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/193868.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">11</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10971</span> Optical and Magnetic Properties of Ferromagnetic Co-Ni Co-Doped TiO2 Thin Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rabah%20Bensaha">Rabah Bensaha</a>, <a href="https://publications.waset.org/abstracts/search?q=Badreddine%20Toubal"> Badreddine Toubal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We investigate the structural, optical and magnetic properties of TiO2, Co-doped TiO2, Ni-doped TiO2 and Co-Ni co-doped TiO2 thin films prepared by the sol-gel dip coating method. Fully anatase phase was obtained by adding metal ions without any detectable impurity phase or oxide formed. AFM and SEM micrographs clearly confirm that the addition of Co-Ni affects the shape of anatase nanoparticles. The crystallite sizes and surface roughness of TiO2 films increase with Co-doping, Ni-doping and Co–Ni co-doping, respectively. The refractive index, thickness and optical band gap values of the films were obtained by means of optical transmittance spectra measurements. The band gap of TiO2 sample was decreased by Co-doping, Ni-doping and Co–Ni co-doping TiO2 films. Both undoped and Co-Ni co-doped films were found to be ferromagnetic at room temperature may due to the presence of oxygen vacancy defect and the probable formation of metal clusters Co-Ni. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Co-Ni%20co-doped" title="Co-Ni co-doped">Co-Ni co-doped</a>, <a href="https://publications.waset.org/abstracts/search?q=anatase%20TiO2" title=" anatase TiO2"> anatase TiO2</a>, <a href="https://publications.waset.org/abstracts/search?q=ferromagnetic" title=" ferromagnetic"> ferromagnetic</a>, <a href="https://publications.waset.org/abstracts/search?q=sol-gel%20method" title=" sol-gel method"> sol-gel method</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20films" title=" thin films"> thin films</a> </p> <a href="https://publications.waset.org/abstracts/35968/optical-and-magnetic-properties-of-ferromagnetic-co-ni-co-doped-tio2-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/35968.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">444</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10970</span> Uniaxial Alignment and Ion Exchange Doping to Enhance the Thermoelectric Properties of Organic Polymers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Wenjin%20Zhu">Wenjin Zhu</a>, <a href="https://publications.waset.org/abstracts/search?q=Ian%20E.%20Jacobs"> Ian E. Jacobs</a>, <a href="https://publications.waset.org/abstracts/search?q=Henning%20Sirringhaus"> Henning Sirringhaus</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This project delves into the efficiency of uniaxial alignment and ion exchange doping as methods to optimize the thermoelectric properties of organic polymers. The anisotropic nature of charge transport in conjugated polymers is capitalized upon through the uniaxial alignment of polymer backbones, ensuring charge transport is streamlined along these backbones. Ion exchange doping has demonstrated superiority over traditional molecular and electrochemical doping methods, amplifying charge carrier densities. By integrating these two techniques, we've observed marked improvements in the thermoelectric attributes of specific conjugated polymers such as PBTTT and DPP based polymers. We demonstrate respectable power factors of 172.6 μW m⁻¹ K⁻² in PBTTT system and 41.7 μW m⁻¹ K⁻² in DPP system. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=organic%20electronics" title="organic electronics">organic electronics</a>, <a href="https://publications.waset.org/abstracts/search?q=thermoelectrics" title=" thermoelectrics"> thermoelectrics</a>, <a href="https://publications.waset.org/abstracts/search?q=uniaxial%20alignment" title=" uniaxial alignment"> uniaxial alignment</a>, <a href="https://publications.waset.org/abstracts/search?q=ion%20exchange%20doping" title=" ion exchange doping"> ion exchange doping</a> </p> <a href="https://publications.waset.org/abstracts/178330/uniaxial-alignment-and-ion-exchange-doping-to-enhance-the-thermoelectric-properties-of-organic-polymers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/178330.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">69</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10969</span> Doping in Sport: Attitudes, Beliefs and Knowledge of Talented</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kim%20Nolte">Kim Nolte</a>, <a href="https://publications.waset.org/abstracts/search?q=Ben%20J.%20M.%20Steyn"> Ben J. M. Steyn</a>, <a href="https://publications.waset.org/abstracts/search?q=Pieter%20E.%20Kr%C3%BCger"> Pieter E. Krüger</a>, <a href="https://publications.waset.org/abstracts/search?q=Lizelle%20Fletcher"> Lizelle Fletcher</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Objective: The primary aim of this research was to determine the attitudes, beliefs and knowledge of talented young South African athletes regarding prohibited performance-enhancing drugs (PEDs) and anti-doping rules and regulations. Methods: This was a survey study and a quantitative research approach was used. South African TuksSport academy athletes at the High Performance Centre, University of Pretoria and competitive high school athletes at four private high schools in Gauteng completed the survey. A self-determined structured questionnaire was used to establish the attitudes, beliefs and knowledge of the athletes. Results: A total of 346 (208 males, 138 females) athletes, age (mean ± SD) 16.9 ±1.41 years participated in the survey. According to this survey, 3.9% of the athletes in this survey admitted to be using a prohibited PED and more than 14% of the athletes said they would consider using a prohibited PED if they knew they would not get caught out. Ambition (46%) and emotional pressure (22.5%) was the primary reasons why the athletes would consider using prohibited PEDs. Even though coaches appear to be the main source of information (PEDs and anti-doping rules), only 42.1% of the athletes felt they were well informed. Conclusion: Controlling doping by means of testing is important. However, it is not sufficient and interventions should include psychosocial programmes planned and developed focusing on changing attitudes towards doping and doping culture, as well as the appropriate education specifically on the health risks of using PEDs. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=doping" title="doping">doping</a>, <a href="https://publications.waset.org/abstracts/search?q=anti-doping" title=" anti-doping"> anti-doping</a>, <a href="https://publications.waset.org/abstracts/search?q=attitudes" title=" attitudes"> attitudes</a>, <a href="https://publications.waset.org/abstracts/search?q=athletes%20and%20sport" title=" athletes and sport"> athletes and sport</a> </p> <a href="https://publications.waset.org/abstracts/9871/doping-in-sport-attitudes-beliefs-and-knowledge-of-talented" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9871.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">515</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10968</span> High Thermal Selective Detection of NOₓ Using High Electron Mobility Transistor Based on Gallium Nitride</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hassane%20Ouazzani%20Chahdi">Hassane Ouazzani Chahdi</a>, <a href="https://publications.waset.org/abstracts/search?q=Omar%20Helli"> Omar Helli</a>, <a href="https://publications.waset.org/abstracts/search?q=Bourzgui%20Nour%20Eddine"> Bourzgui Nour Eddine</a>, <a href="https://publications.waset.org/abstracts/search?q=Hassan%20Maher"> Hassan Maher</a>, <a href="https://publications.waset.org/abstracts/search?q=Ali%20Soltani"> Ali Soltani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The real-time knowledge of the NO, NO₂ concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the concentration of each of these species will also enable engines to run leaner (i.e., more fuel efficient) while still meeting the anti-pollution requirements. Our proposed technology is promising in the field of automotive sensors. It consists of nanostructured semiconductors based on gallium nitride and zirconia dioxide. The development of new technologies for selective detection of NO and NO₂ gas species would be a critical enabler of superior depollution. The current response was well correlated to the NO concentration in the range of 0–2000 ppm, 0-2500 ppm NO₂, and 0-300 ppm NH₃ at a temperature of 600. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=NO%E2%82%93%20sensors" title="NOₓ sensors">NOₓ sensors</a>, <a href="https://publications.waset.org/abstracts/search?q=HEMT%20transistor" title=" HEMT transistor"> HEMT transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=anti-pollution" title=" anti-pollution"> anti-pollution</a>, <a href="https://publications.waset.org/abstracts/search?q=gallium%20nitride" title=" gallium nitride"> gallium nitride</a>, <a href="https://publications.waset.org/abstracts/search?q=gas%20sensor" title=" gas sensor"> gas sensor</a> </p> <a href="https://publications.waset.org/abstracts/79681/high-thermal-selective-detection-of-no-using-high-electron-mobility-transistor-based-on-gallium-nitride" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/79681.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">245</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10967</span> Influence of Boron Doping and Thermal Treatment on Internal Friction of Monocrystalline Si1-xGex(x≤0,02) Alloys</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=I.%20Kurashvili">I. Kurashvili</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Darsavelidze"> G. Darsavelidze</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Bokuchava"> G. Bokuchava</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Sichinava"> A. Sichinava</a>, <a href="https://publications.waset.org/abstracts/search?q=I.%20Tabatadze"> I. Tabatadze </a> </p> <p class="card-text"><strong>Abstract:</strong></p> The impact of boron doping on the internal friction (IF) and shear modulus temperature spectra of Si<sub>1-x</sub>Ge<sub>x</sub>(x≤0,02) monocrsytals has been investigated by reverse torsional pendulum oscillations characteristics testing. At room temperatures, microhardness and indentation modulus of the same specimens have been measured by dynamic ultra microhardness tester. It is shown that boron doping causes two kinds effect: At low boron concentration (~10<sup>15 </sup>cm<sup>-3</sup>) significant strengthening is revealed, while at the high boron concentration (~10<sup>19 </sup>cm<sup>-3</sup>) strengthening effect and activation characteristics of relaxation origin IF processes are reduced. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=boron" title="boron">boron</a>, <a href="https://publications.waset.org/abstracts/search?q=doping" title=" doping"> doping</a>, <a href="https://publications.waset.org/abstracts/search?q=internal%20friction" title=" internal friction"> internal friction</a>, <a href="https://publications.waset.org/abstracts/search?q=si-ge%20alloys" title=" si-ge alloys"> si-ge alloys</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20treatment" title=" thermal treatment"> thermal treatment</a> </p> <a href="https://publications.waset.org/abstracts/45812/influence-of-boron-doping-and-thermal-treatment-on-internal-friction-of-monocrystalline-si1-xgexx002-alloys" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45812.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">457</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10966</span> Optimization of Laser Doping Selective Emitter for Silicon Solar Cells</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Meziani%20Samir">Meziani Samir</a>, <a href="https://publications.waset.org/abstracts/search?q=Moussi%20Abderrahmane"> Moussi Abderrahmane</a>, <a href="https://publications.waset.org/abstracts/search?q=Chaouchi%20Sofiane"> Chaouchi Sofiane</a>, <a href="https://publications.waset.org/abstracts/search?q=Guendouzi%20Awatif"> Guendouzi Awatif</a>, <a href="https://publications.waset.org/abstracts/search?q=Djema%20Oussama"> Djema Oussama</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Laser doping has a large potential for integration into silicon solar cell technologies. The ability to process local, heavily diffused regions in a self-aligned manner can greatly simplify processing sequences for the fabrication of selective emitter. The choice of laser parameters for a laser doping process with 532nm is investigated. Solid state lasers with different power and speed were used for laser doping. In this work, the aim is the formation of selective emitter solar cells with a reduced number of technological steps. In order to have a highly doped localized emitter region, we used a 532 nm laser doping. Note that this region will receive the metallization of the Ag grid by screen printing. For this, we use SOLIDWORKS software to design a single type of pattern for square silicon cells. Sheet resistances, phosphorus doping concentration and silicon bulk lifetimes of irradiated samples are presented. Additionally, secondary ion mass spectroscopy (SIMS) profiles of the laser processed samples were acquired. Scanning electron microscope and optical microscope images of laser processed surfaces at different parameters are shown and compared. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=laser%20doping" title="laser doping">laser doping</a>, <a href="https://publications.waset.org/abstracts/search?q=selective%20emitter" title=" selective emitter"> selective emitter</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title=" solar cells"> solar cells</a> </p> <a href="https://publications.waset.org/abstracts/165841/optimization-of-laser-doping-selective-emitter-for-silicon-solar-cells" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/165841.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">102</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10965</span> Optimization of Temperature Coefficients for MEMS Based Piezoresistive Pressure Sensor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Vijay%20Kumar">Vijay Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=Jaspreet%20Singh"> Jaspreet Singh</a>, <a href="https://publications.waset.org/abstracts/search?q=Manoj%20Wadhwa"> Manoj Wadhwa</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Piezo-resistive pressure sensors were one of the first developed micromechanical system (MEMS) devices and still display a significant growth prompted by the advancements in micromachining techniques and material technology. In MEMS based piezo-resistive pressure sensors, temperature can be considered as the main environmental condition which affects the system performance. The study of the thermal behavior of these sensors is essential to define the parameters that cause the output characteristics to drift. In this work, a study on the effects of temperature and doping concentration in a boron implanted piezoresistor for a silicon-based pressure sensor is discussed. We have optimized the temperature coefficient of resistance (TCR) and temperature coefficient of sensitivity (TCS) values to determine the effect of temperature drift on the sensor performance. To be more precise, in order to reduce the temperature drift, a high doping concentration is needed. And it is well known that the Wheatstone bridge in a pressure sensor is supplied with a constant voltage or a constant current input supply. With a constant voltage supply, the thermal drift can be compensated along with an external compensation circuit, whereas the thermal drift in the constant current supply can be directly compensated by the bridge itself. But it would be beneficial to also compensate the temperature coefficient of piezoresistors so as to further reduce the temperature drift. So, with a current supply, the TCS is dependent on both the TCπ and TCR. As TCπ is a negative quantity and TCR is a positive quantity, it is possible to choose an appropriate doping concentration at which both of them cancel each other. An exact cancellation of TCR and TCπ values is not readily attainable; therefore, an adjustable approach is generally used in practical applications. Thus, one goal of this work has been to better understand the origin of temperature drift in pressure sensor devices so that the temperature effects can be minimized or eliminated. This paper describes the optimum doping levels for the piezoresistors where the TCS of the pressure transducers will be zero due to the cancellation of TCR and TCπ values. Also, the fabrication and characterization of the pressure sensor are carried out. The optimized TCR value obtained for the fabricated die is 2300 ± 100ppm/ᵒC, for which the piezoresistors are implanted at a doping concentration of 5E13 ions/cm³ and the TCS value of -2100ppm/ᵒC is achieved. Therefore, the desired TCR and TCS value is achieved, which are approximately equal to each other, so the thermal effects are considerably reduced. Finally, we have calculated the effect of temperature and doping concentration on the output characteristics of the sensor. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=piezo-resistive" title="piezo-resistive">piezo-resistive</a>, <a href="https://publications.waset.org/abstracts/search?q=pressure%20sensor" title=" pressure sensor"> pressure sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=doping%20concentration" title=" doping concentration"> doping concentration</a>, <a href="https://publications.waset.org/abstracts/search?q=TCR" title=" TCR"> TCR</a>, <a href="https://publications.waset.org/abstracts/search?q=TCS" title=" TCS"> TCS</a> </p> <a href="https://publications.waset.org/abstracts/137637/optimization-of-temperature-coefficients-for-mems-based-piezoresistive-pressure-sensor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/137637.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">180</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10964</span> Effect of Cr and Fe Doping on the Structural and Optical Properties of ZnO Nanostructures</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Prakash%20Chand">Prakash Chand</a>, <a href="https://publications.waset.org/abstracts/search?q=Anurag%20Gaur"> Anurag Gaur</a>, <a href="https://publications.waset.org/abstracts/search?q=Ashavani%20Kumar"> Ashavani Kumar </a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the present study, we have synthesized Cr and Fe doped zinc oxide (ZnO) nano-structures (Zn1-δCraFebO; where δ= a + b=20%, a = 5, 6, 8 & 10% and b=15, 14, 12 & 10%) via sol-gel method at different doping concentrations. The synthesized samples were characterized for structural properties by X-ray diffractometer and field emission scanning electron microscope and the optical properties were carried out through photoluminescence and UV-visible spectroscopy. The particle size calculated through field emission scanning electron microscope varies from 41 to 96 nm for the samples synthesized at different doping concentrations. The optical band gaps calculated through UV-visible spectroscopy are found to be decreasing from 3.27 to 3.02 eV as the doping concentration of Cr increases and Fe decreases. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nano-structures" title="nano-structures">nano-structures</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20properties" title=" optical properties"> optical properties</a>, <a href="https://publications.waset.org/abstracts/search?q=sol-gel%20method" title=" sol-gel method"> sol-gel method</a>, <a href="https://publications.waset.org/abstracts/search?q=zinc%20oxide" title=" zinc oxide "> zinc oxide </a> </p> <a href="https://publications.waset.org/abstracts/11644/effect-of-cr-and-fe-doping-on-the-structural-and-optical-properties-of-zno-nanostructures" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/11644.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">320</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10963</span> Exact Phase Diagram of High-TC Superconductors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abid%20Boudiar">Abid Boudiar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We propose a simple model to obtain an exact expression of Tc/(Tc,max) for the temperature-doping phase diagram of superconducting cuprates. We showed that our model predicted most phase diagram scenario. We found the exact special doping points p(opt), p(qcp) and an accurate E(g,max). Some other properties such as the stripes length 100.1°A and the energy gap in cuprates chain 6meV can also be calculated exactly. Another interesting consequence of this simple picture is the new magic numbers and the ability to express everything using a (Tc,p) diagram via the golden ratio. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=superconducting%20cuprates" title="superconducting cuprates">superconducting cuprates</a>, <a href="https://publications.waset.org/abstracts/search?q=phase" title=" phase"> phase</a>, <a href="https://publications.waset.org/abstracts/search?q=pseudogap" title=" pseudogap"> pseudogap</a>, <a href="https://publications.waset.org/abstracts/search?q=hole%20doping" title=" hole doping"> hole doping</a>, <a href="https://publications.waset.org/abstracts/search?q=strips" title=" strips"> strips</a>, <a href="https://publications.waset.org/abstracts/search?q=golden%20ratio" title=" golden ratio"> golden ratio</a>, <a href="https://publications.waset.org/abstracts/search?q=soliton" title=" soliton"> soliton</a> </p> <a href="https://publications.waset.org/abstracts/26541/exact-phase-diagram-of-high-tc-superconductors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/26541.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">470</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10962</span> Suppressing Ambipolar Conduction Using Dual Material Gate in Tunnel-FETs Having Heavily Doped Drain</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Dawit%20Burusie%20Abdi">Dawit Burusie Abdi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mamidala%20Jagadesh%20Kumar"> Mamidala Jagadesh Kumar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=dual%20material%20gate" title="dual material gate">dual material gate</a>, <a href="https://publications.waset.org/abstracts/search?q=suppressing%20ambipolar%20current" title=" suppressing ambipolar current"> suppressing ambipolar current</a>, <a href="https://publications.waset.org/abstracts/search?q=symmetrically%20doped%20TFET" title=" symmetrically doped TFET"> symmetrically doped TFET</a>, <a href="https://publications.waset.org/abstracts/search?q=tunnel%20FETs" title=" tunnel FETs"> tunnel FETs</a>, <a href="https://publications.waset.org/abstracts/search?q=PNPN%20TFET" title=" PNPN TFET"> PNPN TFET</a> </p> <a href="https://publications.waset.org/abstracts/42462/suppressing-ambipolar-conduction-using-dual-material-gate-in-tunnel-fets-having-heavily-doped-drain" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/42462.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">370</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10961</span> Investigation of Doping Effects on Nonradiative Recombination Parameters in Bulk GaAs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Soufiene%20Ilahi">Soufiene Ilahi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We have used Photothermal deflection spectroscopy PTD to investigate the impact of doping on electronics properties of bulk. Then, the extraction of these parameters is performed by fitting the theoretical curves to the experimental PTD ones. We have remarked that electron mobility in p type C-doped GaAs is about 300 cm2/V·s. Accordinagly, the diffusion length of minority carrier lifetime is equal to 5 (± 7%), 5 (± 4,4%) and 1.42 µm (± 7,2 %) for the Cr, C and Si doped GaAs respectively. Surface recombination velocity varies randomly that can be found around of 7942 m/s, 100 m/s and 153 m/s GaAs doped Si, Cr, C, respectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonradiative%20lifetime" title="nonradiative lifetime">nonradiative lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=mobility%20of%20minority%20carrier" title=" mobility of minority carrier"> mobility of minority carrier</a>, <a href="https://publications.waset.org/abstracts/search?q=diffusion%20length" title=" diffusion length"> diffusion length</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20and%20interface%20recombination%20in%20GaAs" title=" surface and interface recombination in GaAs"> surface and interface recombination in GaAs</a> </p> <a href="https://publications.waset.org/abstracts/166602/investigation-of-doping-effects-on-nonradiative-recombination-parameters-in-bulk-gaas" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/166602.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">72</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10960</span> Structural and Optoelectronic Properties of Monovalent Cation Doping PbS Thin Films </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Melissa%20Chavez%20Portillo">Melissa Chavez Portillo</a>, <a href="https://publications.waset.org/abstracts/search?q=Hector%20Juarez%20Santiesteban"> Hector Juarez Santiesteban</a>, <a href="https://publications.waset.org/abstracts/search?q=Mauricio%20Pacio%20Castillo"> Mauricio Pacio Castillo</a>, <a href="https://publications.waset.org/abstracts/search?q=Oscar%20Portillo%20Moreno"> Oscar Portillo Moreno</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Nanocrystalline Li-doped PbS thin films have been deposited by chemical bath deposition technique. The goal of this work is to study the modification of the optoelectronic and structural properties of Lithium incorporation. The increase of Li doping in PbS thin films leads to an increase of band gap in the range of 1.4-2.3, consequently, quantum size effect becomes pronounced in the Li-doped PbS films, which lead to a significant enhancement in the optical band gap. Doping shows influence in the film growth and results in a reduction of crystallite size from 30 to 14 nm. The refractive index was calculated and a relationship with dielectric constant was investigated. The dc conductivities of Li-doped and undoped samples were measured in the temperature range 290-340K, the conductivity increase with increase of Lithium content in the PbS films. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=doping" title="doping">doping</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20confinement" title=" quantum confinement"> quantum confinement</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20band%20gap" title=" optical band gap"> optical band gap</a>, <a href="https://publications.waset.org/abstracts/search?q=PbS" title=" PbS"> PbS</a> </p> <a href="https://publications.waset.org/abstracts/58519/structural-and-optoelectronic-properties-of-monovalent-cation-doping-pbs-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/58519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">383</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10959</span> Preclinical Studying of Stable Fe-Citrate Effect on 68Ga-Citrate Tissue Distribution</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20S.%20Lunev">A. S. Lunev</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20A.%20Larenkov"> A. A. Larenkov</a>, <a href="https://publications.waset.org/abstracts/search?q=O.%20E.%20Klementyeva"> O. E. Klementyeva</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20E.%20Kodina"> G. E. Kodina</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Background and aims: 68Ga-citrate is one of prospective radiopharmaceutical for PET-imaging of inflammation and infection. 68Ga-citrate is 67Ga-citrate analogue using since 1970s for SPECT-imaging. There's known rebinding reaction occurs past Ga-citrate injection and gallium (similar iron Fe3+) binds with blood transferrin. Then radiolabeled protein complex is delivered to pathological foci (inflammation/infection sites). But excessive gallium bindings with transferrin are cause of slow blood clearance, long accumulation time in foci (24-72 h) and exception of application possibility of the short-lived gallium-68 (T½ = 68 min). Injection of additional chemical agents (e.g. Fe3+ compounds) competing with radioactive gallium to the blood transferrin joining (blocking of its metal binding capacity) is one of the ways to solve formulated problem. This phenomenon can be used for correction of 68Ga-citrate pharmacokinetics for increasing of the blood clearance and accumulation in foci. The aim of real studying is research of effect of stable Fe-citrate on 68Ga-citrate tissue distribution. Materials and methods: 68Ga-citrate without/with extra injection of stable Fe-citrate (III) was injected nonlinear mice with inflammation models (aseptic soft tissue inflammation, lung infection, osteomyelitis). PET/X-RAY Genisys4 (Sofie Bioscience, USA) was used for non-invasive PET imaging (for 30, 60, 120 min past injection 68Ga-citrate) with subsequent reconstruction of imaging and their analysis (value of clearance, distribution volume). Scanning time is 10 min. Results and conclusions: I. v. injection of stable Fe-citrate blocks the metal-binding capability of transferrin serum and allows decreasing gallium-68 radioactivity in blood significantly and increasing accumulation in inflammation (3-5 time). It allows receiving more informative PET-images of inflammation early (for 30-60 min after injection). Pharmacokinetic parameters prove it. Noted there is no statistically significant difference between 68Ga-citrate accumulation for different inflammation model because PET imaging is indication of pathological processes and is not their identification. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=68Ga-citrate" title="68Ga-citrate">68Ga-citrate</a>, <a href="https://publications.waset.org/abstracts/search?q=Fe-citrate" title=" Fe-citrate"> Fe-citrate</a>, <a href="https://publications.waset.org/abstracts/search?q=PET%20imaging" title=" PET imaging"> PET imaging</a>, <a href="https://publications.waset.org/abstracts/search?q=mice" title=" mice"> mice</a>, <a href="https://publications.waset.org/abstracts/search?q=inflammation" title=" inflammation"> inflammation</a>, <a href="https://publications.waset.org/abstracts/search?q=infection" title=" infection"> infection</a> </p> <a href="https://publications.waset.org/abstracts/34962/preclinical-studying-of-stable-fe-citrate-effect-on-68ga-citrate-tissue-distribution" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34962.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">488</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10958</span> Thermoelectric Properties of Spark Plasma Sintered Te Doped Cu₃SbSe₄: Promising Thermoelectric Material</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kriti%20Tyagi">Kriti Tyagi</a>, <a href="https://publications.waset.org/abstracts/search?q=Bhasker%20Gahtori"> Bhasker Gahtori</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Various groups have attempted on enhancing the thermoelectric figure-of-merit (ZT) of the Cu₃SbSe₄ compound by employing doping process. Efforts are made to study the thermoelectric performance of Cu₃SbSe₄ material doped with Te in different compositions (i. e. Cu₃Sb₁₋ₓTeₓSe₄, x = 0.005, 0.01, 0.015, 0.02). The different doping concentration has been selected to identify the suitable doping to increase the thermoelectric performance. Compared to pristine Cu₃SbSe₄, an enhancement of thermoelectric figure-of-merit was achieved for 0.005 Te doped Cu₃SbSe₄. This improvement can be attributed to the reduction of thermal conductivity for 0.005 Te doped Cu₃SbSe₄. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=figure-of-merit" title="figure-of-merit">figure-of-merit</a>, <a href="https://publications.waset.org/abstracts/search?q=polycrystalline" title=" polycrystalline"> polycrystalline</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20conductivity" title=" thermal conductivity"> thermal conductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=thermoelectric" title=" thermoelectric"> thermoelectric</a> </p> <a href="https://publications.waset.org/abstracts/95321/thermoelectric-properties-of-spark-plasma-sintered-te-doped-cu3sbse4-promising-thermoelectric-material" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/95321.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">243</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10957</span> Dy³+/Eu³+ Co-Activated Gadolinium Aluminate Borate Phosphor: Enhanced Luminescence and Color Output Tuning</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Osama%20Madkhali">Osama Madkhali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> GdAl₃(BO₃)₄ phosphors, incorporating Dy³+ and Dy³+/Eu³+ activators, were successfully synthesized via the gel combustion method. Powder X-ray diffraction (XRD) was utilized to ascertain phase purity and assess the impact of dopant concentration on the crystallographic structure. Photoluminescence (PL) measurements revealed that luminescence properties' intensity and lifetime varied with Dy³+ and Eu³+ ion concentrations. The relationship between luminescence intensity and doping concentration was explored in the context of the energy transfer process between Eu³+ and Dy³+ ions. An increase in Eu³+ co-doping concentrations resulted in a decrease in luminescence lifetime. Energy transfer efficiency was significantly enhanced from 26% to 84% with Eu³+ co-doping, as evidenced by decay curve analysis. These findings position GdAl₃(BO₃)4: Dy³+, Eu³+ phosphors as promising candidates for LED applications in solid-state lighting and displays. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GdAl%E2%82%83%28BO%E2%82%83%29%E2%82%84%20phosphors" title="GdAl₃(BO₃)₄ phosphors">GdAl₃(BO₃)₄ phosphors</a>, <a href="https://publications.waset.org/abstracts/search?q=Dy%C2%B3%2B%2FEu%C2%B3%2B%20co-doping" title=" Dy³+/Eu³+ co-doping"> Dy³+/Eu³+ co-doping</a>, <a href="https://publications.waset.org/abstracts/search?q=photoluminescence%20%28PL%29%20measurements" title=" photoluminescence (PL) measurements"> photoluminescence (PL) measurements</a>, <a href="https://publications.waset.org/abstracts/search?q=luminescence%20properties" title=" luminescence properties"> luminescence properties</a>, <a href="https://publications.waset.org/abstracts/search?q=LED%20applications" title=" LED applications"> LED applications</a>, <a href="https://publications.waset.org/abstracts/search?q=solid-state%20lighting" title=" solid-state lighting"> solid-state lighting</a> </p> <a href="https://publications.waset.org/abstracts/181481/dy3eu3-co-activated-gadolinium-aluminate-borate-phosphor-enhanced-luminescence-and-color-output-tuning" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/181481.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">56</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10956</span> Numerical Design and Characterization of MOVPE Grown Nitride Based Semiconductors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=J.%20Skibinski">J. Skibinski</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20Caban"> P. Caban</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20Wejrzanowski"> T. Wejrzanowski</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20J.%20Kurzydlowski"> K. J. Kurzydlowski</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the present study numerical simulations of epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S are addressed. The aim of this study was to design the optimal fluid flow and thermal conditions for obtaining the most homogeneous product. Since there are many agents influencing reactions on the crystal growth area such as temperature, pressure, gas flow or reactor geometry, it is difficult to design optimal process. Variations of process pressure and hydrogen mass flow rates have been considered. According to the fact that it’s impossible to determine experimentally the exact distribution of heat and mass transfer inside the reactor during crystal growth, detailed 3D modeling has been used to get an insight of the process conditions. Numerical simulations allow to understand the epitaxial process by calculation of heat and mass transfer distribution during growth of gallium nitride. Including chemical reactions in the numerical model allows to calculate the growth rate of the substrate. The present approach has been applied to enhance the performance of AIX-200/4RF-S reactor. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=computational%20fluid%20dynamics" title="computational fluid dynamics">computational fluid dynamics</a>, <a href="https://publications.waset.org/abstracts/search?q=finite%20volume%20method" title=" finite volume method"> finite volume method</a>, <a href="https://publications.waset.org/abstracts/search?q=epitaxial%20growth" title=" epitaxial growth"> epitaxial growth</a>, <a href="https://publications.waset.org/abstracts/search?q=gallium%20nitride" title=" gallium nitride"> gallium nitride</a> </p> <a href="https://publications.waset.org/abstracts/19035/numerical-design-and-characterization-of-movpe-grown-nitride-based-semiconductors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19035.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> 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