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photon-assisted tunneling photodetector</title> <meta name="description" content="Search results for: photon-assisted tunneling photodetector"> <meta name="keywords" content="photon-assisted tunneling photodetector"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open 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class="col-md-9 mx-auto"> <form method="get" action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="photon-assisted tunneling photodetector"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 113</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: photon-assisted tunneling photodetector</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">113</span> Noninvasive Continuous Glucose Monitoring Device Using a Photon-Assisted Tunneling Photodetector Based on a Quantum Metal-Oxide-Semiconductor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Wannakorn%20Sangthongngam">Wannakorn Sangthongngam</a>, <a href="https://publications.waset.org/abstracts/search?q=Melissa%20Huerta"> Melissa Huerta</a>, <a href="https://publications.waset.org/abstracts/search?q=Jaewoo%20Kim"> Jaewoo Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Doyeon%20Kim"> Doyeon Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Continuous glucose monitoring systems are essential for diabetics to avoid health complications but come at a costly price, especially when insurance does not fully cover the diabetic testing kits needed. This paper proposes a noninvasive continuous glucose monitoring system to provide an accessible, low-cost, and painless alternative method of accurate glucose measurements to help improve quality of life. Using a light source with a wavelength of 850nm illuminates the fingertip for the photodetector to detect the transmitted light. Utilizing SeeDevice’s photon-assisted tunneling photodetector (PAT-PD)-based QMOS™ sensor, fluctuations of voltage based on photon absorption in blood cells are comparable to traditional glucose measurements. The performance of the proposed method was validated using 4 test participants’ transmitted voltage readings compared with measurements obtained from the Accu-Chek glucometer. The proposed method was able to successfully measure concentrations from linear regression calculations. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=continuous%20glucose%20monitoring" title="continuous glucose monitoring">continuous glucose monitoring</a>, <a href="https://publications.waset.org/abstracts/search?q=non-invasive%20continuous%20glucose%20monitoring" title=" non-invasive continuous glucose monitoring"> non-invasive continuous glucose monitoring</a>, <a href="https://publications.waset.org/abstracts/search?q=NIR" title=" NIR"> NIR</a>, <a href="https://publications.waset.org/abstracts/search?q=photon-assisted%20tunneling%20photodetector" title=" photon-assisted tunneling photodetector"> photon-assisted tunneling photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=QMOS%E2%84%A2" title=" QMOS™"> QMOS™</a>, <a href="https://publications.waset.org/abstracts/search?q=wearable%20device" title=" wearable device"> wearable device</a> </p> <a href="https://publications.waset.org/abstracts/174019/noninvasive-continuous-glucose-monitoring-device-using-a-photon-assisted-tunneling-photodetector-based-on-a-quantum-metal-oxide-semiconductor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/174019.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">97</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">112</span> Photodetector Engineering with Plasmonic Properties</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hasan%20Furkan%20Kurt">Hasan Furkan Kurt</a>, <a href="https://publications.waset.org/abstracts/search?q=Tugba%20Nur%20Atabey"> Tugba Nur Atabey</a>, <a href="https://publications.waset.org/abstracts/search?q=Onat%20Cavit%20Dereli"> Onat Cavit Dereli</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahmad%20Salmanogli"> Ahmad Salmanogli</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Selcuk%20Gecim"> H. Selcuk Gecim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the article, the main goal is to study the effect of the plasmonic properties on the photocurrent generated by a photodetector. Fundamentally, a typical photodetector is designed and simulated using the finite element methods. To utilize the plasmonic effect, gold nanoparticles with different shape, size and morphology are buried into the intrinsic region. Plasmonic effect is arisen through the interaction of the incoming light with nanoparticles by which electrical properties of the photodetector are manipulated. In fact, using plasmonic nanoparticles not only increases the absorption bandwidth of the incoming light, but also generates a high intensity near-field close to the plasmonic nanoparticles. Those properties strongly affect the generated photocurrent. The simulation results show that using plasmonic nanoparticles significantly enhances the electrical properties of the photodetectors. More importantly, one can easily manipulate the plasmonic properties of the gold nanoparticles through engineering the nanoparticles' size, shape and morphology. Another important phenomenon is plasmon-plasmon interaction inside the photodetector. It is shown that plasmon-plasmon interaction improves the electron-hole generation rate by which the rate of the current generation is severely enhanced. This is the key factor that we want to focus on, to improve the photodetector electrical properties. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=plasmonic%20photodetector" title="plasmonic photodetector">plasmonic photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=plasmon-plasmon%20interaction" title=" plasmon-plasmon interaction"> plasmon-plasmon interaction</a>, <a href="https://publications.waset.org/abstracts/search?q=Gold%20nanoparticle" title=" Gold nanoparticle"> Gold nanoparticle</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20properties" title=" electrical properties"> electrical properties</a> </p> <a href="https://publications.waset.org/abstracts/125857/photodetector-engineering-with-plasmonic-properties" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/125857.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">138</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">111</span> Influence of Wavelengths on Photosensitivity of Copper Phthalocyanine Based Photodetectors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Lekshmi%20Vijayan">Lekshmi Vijayan</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20Shreekrishna%20Kumar"> K. Shreekrishna Kumar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We demonstrated an organic field effect transistor based photodetector using phthalocyanine as the active material that exhibited high photosensitivity under varying light wavelengths. The thermally grown SiO₂ layer on silicon wafer act as a substrate. The critical parameters, such as photosensitivity, responsivity and detectivity, are comparatively high and were 3.09, 0.98AW⁻¹ and 4.86 × 10¹⁰ Jones, respectively, under a bias of 5 V and a monochromatic illumination intensity of 4mW cm⁻². The photodetector has a linear I-V curve with a low dark current. On comparing photoresponse of copper phthalocyanine at four different wavelengths, 560 nm shows better photoresponse and the highest value of photosensitivity is also obtained. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=photodetector" title="photodetector">photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=responsivity" title=" responsivity"> responsivity</a>, <a href="https://publications.waset.org/abstracts/search?q=photosensitivity" title=" photosensitivity"> photosensitivity</a>, <a href="https://publications.waset.org/abstracts/search?q=detectivity" title=" detectivity"> detectivity</a> </p> <a href="https://publications.waset.org/abstracts/88804/influence-of-wavelengths-on-photosensitivity-of-copper-phthalocyanine-based-photodetectors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/88804.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">178</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">110</span> Solar-Blind Ni-Schottky Photodetector Based on MOCVD Grown ZnGa₂O₄</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Taslim%20Khan">Taslim Khan</a>, <a href="https://publications.waset.org/abstracts/search?q=Ray%20Hua%20Horng"> Ray Hua Horng</a>, <a href="https://publications.waset.org/abstracts/search?q=Rajendra%20Singh"> Rajendra Singh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This study presents a comprehensive analysis of the design, fabrication, and performance evaluation of a solar-blind Schottky photodetector based on ZnGa₂O₄ grown via MOCVD, utilizing Ni/Au as the Schottky electrode. ZnGa₂O₄, with its wide bandgap of 5.2 eV, is well-suited for high-performance solar-blind photodetection applications. The photodetector demonstrates an impressive responsivity of 280 A/W, indicating its exceptional sensitivity within the solar-blind ultraviolet band. One of the device's notable attributes is its high rejection ratio of 10⁵, which effectively filters out unwanted background signals, enhancing its reliability in various environments. The photodetector also boasts a photodetector responsivity contrast ratio (PDCR) of 10⁷, showcasing its ability to detect even minor changes in incident UV light. Additionally, the device features an outstanding detective of 10¹⁸ Jones, underscoring its capability to precisely detect faint UV signals. It exhibits a fast response time of 80 ms and an ON/OFF ratio of 10⁵, making it suitable for real-time UV sensing applications. The noise-equivalent power (NEP) of 10^-17 W/Hz further highlights its efficiency in detecting low-intensity UV signals. The photodetector also achieves a high forward-to-backward current rejection ratio of 10⁶, ensuring high selectivity. Furthermore, the device maintains an extremely low dark current of approximately 0.1 pA. These findings position the ZnGa₂O₄-based Schottky photodetector as a leading candidate for solar-blind UV detection applications. It offers a compelling combination of sensitivity, selectivity, and operational efficiency, making it a highly promising tool for environments requiring precise and reliable UV detection. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=wideband%20gap" title="wideband gap">wideband gap</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20blind%20photodetector" title=" solar blind photodetector"> solar blind photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=MOCVD" title=" MOCVD"> MOCVD</a>, <a href="https://publications.waset.org/abstracts/search?q=zinc%20gallate" title=" zinc gallate"> zinc gallate</a> </p> <a href="https://publications.waset.org/abstracts/186831/solar-blind-ni-schottky-photodetector-based-on-mocvd-grown-znga2o4" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/186831.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">39</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">109</span> High Responsivity of Zirconium boride/Chromium Alloy Heterostructure for Deep and Near UV Photodetector</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sanjida%20Akter">Sanjida Akter</a>, <a href="https://publications.waset.org/abstracts/search?q=Ambali%20Alade%20Odebowale"> Ambali Alade Odebowale</a>, <a href="https://publications.waset.org/abstracts/search?q=Andrey%20E.%20Miroshnichenko"> Andrey E. Miroshnichenko</a>, <a href="https://publications.waset.org/abstracts/search?q=Haroldo%20T.%20Hattori"> Haroldo T. Hattori</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Photodetectors (PDs) play a pivotal role in optoelectronics and optical devices, serving as fundamental components that convert light signals into electrical signals. As the field progresses, the integration of advanced materials with unique optical properties has become a focal point, paving the way for the innovation of novel PDs. This study delves into the exploration of a cutting-edge photodetector designed for deep and near ultraviolet (UV) applications. The photodetector is constructed with a composite of Zirconium Boride (ZrB2) and Chromium (Cr) alloy, deposited onto a 6H nitrogen-doped silicon carbide substrate. The determination of the optimal alloy thickness is achieved through Finite-Difference Time-Domain (FDTD) simulation, and the synthesis of the alloy is accomplished using radio frequency (RF) sputtering. Remarkably, the resulting photodetector exhibits an exceptional responsivity of 3.5 A/W under an applied voltage of -2 V, at wavelengths of 405 nm and 280 nm. This heterostructure not only exemplifies high performance but also provides a versatile platform for the development of near UV photodetectors capable of operating effectively in challenging conditions, such as environments characterized by high power and elevated temperatures. This study contributes to the expanding landscape of photodetector technology, offering a promising avenue for the advancement of optoelectronic devices in demanding applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=responsivity" title="responsivity">responsivity</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20carbide" title=" silicon carbide"> silicon carbide</a>, <a href="https://publications.waset.org/abstracts/search?q=ultraviolet%20photodetector" title=" ultraviolet photodetector"> ultraviolet photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=zirconium%20boride" title=" zirconium boride"> zirconium boride</a> </p> <a href="https://publications.waset.org/abstracts/182866/high-responsivity-of-zirconium-boridechromium-alloy-heterostructure-for-deep-and-near-uv-photodetector" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/182866.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">66</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">108</span> Shield Tunnel Excavation Simulation of a Case Study Using a So-Called 'Stress Relaxation' Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shengwei%20Zhu">Shengwei Zhu</a>, <a href="https://publications.waset.org/abstracts/search?q=Alireza%20Afshani"> Alireza Afshani</a>, <a href="https://publications.waset.org/abstracts/search?q=Hirokazu%20Akagi"> Hirokazu Akagi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Ground surface settlement induced by shield tunneling is addressing increasing attention as shield tunneling becomes a popular construction technique for tunnels in urban areas. This paper discusses a 2D longitudinal FEM simulation of a tunneling case study in Japan (Tokyo Metro Yurakucho Line). Tunneling-induced field data was already collected and is used here for comparison and evaluating purposes. In this model, earth pressure, face pressure, backfilling grouting, elastic tunnel lining, and Mohr-Coulomb failure criterion for soil elements are considered. A method called ‘stress relaxation’ is also exploited to simulate the gradual tunneling excavation. Ground surface settlements obtained from numerical results using the introduced method are then compared with the measurement data. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=2D%20longitudinal%20FEM%20model" title="2D longitudinal FEM model">2D longitudinal FEM model</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling%20case%20study" title=" tunneling case study"> tunneling case study</a>, <a href="https://publications.waset.org/abstracts/search?q=stress%20relaxation" title=" stress relaxation"> stress relaxation</a>, <a href="https://publications.waset.org/abstracts/search?q=shield%20tunneling%20excavation" title=" shield tunneling excavation"> shield tunneling excavation</a> </p> <a href="https://publications.waset.org/abstracts/73313/shield-tunnel-excavation-simulation-of-a-case-study-using-a-so-called-stress-relaxation-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73313.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">332</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">107</span> New Analytical Current-Voltage Model for GaN-based Resonant Tunneling Diodes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zhuang%20Guo">Zhuang Guo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the field of GaN-based resonant tunneling diodes (RTDs) simulations, the traditional Tsu-Esaki formalism failed to predict the values of peak currents and peak voltages in the simulated current-voltage(J-V) characteristics. The main reason is that due to the strong internal polarization fields, two-dimensional electron gas(2DEG) accumulates at emitters, resulting in 2D-2D resonant tunneling currents, which become the dominant parts of the total J-V characteristics. By comparison, based on the 3D-2D resonant tunneling mechanism, the traditional Tsu-Esaki formalism cannot predict the J-V characteristics correctly. To overcome this shortcoming, we develop a new analytical model for the 2D-2D resonant tunneling currents generated in GaN-based RTDs. Compared with Tsu-Esaki formalism, the new model has made the following modifications: Firstly, considering the Heisenberg uncertainty, the new model corrects the expression of the density of states around the 2DEG eigenenergy levels at emitters so that it could predict the half width at half-maximum(HWHM) of resonant tunneling currents; Secondly, taking into account the effect of bias on wave vectors on the collectors, the new model modifies the expression of the transmission coefficients which could help to get the values of peak currents closer to the experiment data compared with Tsu-Esaki formalism. The new analytical model successfully predicts the J-V characteristics of GaN-based RTDs, and it also reveals more detailed mechanisms of resonant tunneling happened in GaN-based RTDs, which helps to design and fabricate high-performance GaN RTDs. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN-based%20resonant%20tunneling%20diodes" title="GaN-based resonant tunneling diodes">GaN-based resonant tunneling diodes</a>, <a href="https://publications.waset.org/abstracts/search?q=tsu-esaki%20formalism" title=" tsu-esaki formalism"> tsu-esaki formalism</a>, <a href="https://publications.waset.org/abstracts/search?q=2D-2D%20resonant%20tunneling" title=" 2D-2D resonant tunneling"> 2D-2D resonant tunneling</a>, <a href="https://publications.waset.org/abstracts/search?q=heisenberg%20uncertainty" title=" heisenberg uncertainty"> heisenberg uncertainty</a> </p> <a href="https://publications.waset.org/abstracts/166160/new-analytical-current-voltage-model-for-gan-based-resonant-tunneling-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/166160.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">76</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">106</span> Dielectric Behavior of 2D Layered Insulator Hexagonal Boron Nitride</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Nikhil%20Jain">Nikhil Jain</a>, <a href="https://publications.waset.org/abstracts/search?q=Yang%20Xu"> Yang Xu</a>, <a href="https://publications.waset.org/abstracts/search?q=Bin%20Yu"> Bin Yu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Hexagonal boron nitride (h-BN) has been used as a substrate and gate dielectric for graphene field effect transistors (GFETs). Using a graphene/h-BN/TiN (channel/dielectric/gate) stack, key material properties of h-BN were investigated i.e. dielectric strength and tunneling behavior. Work function difference between graphene and TiN results in spontaneous p-doping of graphene through a multi-layer h-BN flake. However, at high levels of current stress, n-doping of graphene is observed, possibly due to the charge transfer across the thin h-BN multi layer. Neither Direct Tunneling (DT) nor Fowler-Nordheim Tunneling (FNT) was observed in TiN/h-BN/Au hetero structures with h-BN showing two distinct volatile conduction states before breakdown. Hexagonal boron nitride emerges as a material of choice for gate dielectrics in GFETs because of robust dielectric properties and high tunneling barrier. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=graphene" title="graphene">graphene</a>, <a href="https://publications.waset.org/abstracts/search?q=transistors" title=" transistors"> transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=conduction" title=" conduction"> conduction</a>, <a href="https://publications.waset.org/abstracts/search?q=hexagonal%20boron%20nitride" title=" hexagonal boron nitride"> hexagonal boron nitride</a>, <a href="https://publications.waset.org/abstracts/search?q=dielectric%20strength" title=" dielectric strength"> dielectric strength</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling" title=" tunneling"> tunneling</a> </p> <a href="https://publications.waset.org/abstracts/22593/dielectric-behavior-of-2d-layered-insulator-hexagonal-boron-nitride" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22593.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">365</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">105</span> Risk Prioritization in Tunneling Construction Projects</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=David%20Nantes">David Nantes</a>, <a href="https://publications.waset.org/abstracts/search?q=George%20Gilbert"> George Gilbert</a> </p> <p class="card-text"><strong>Abstract:</strong></p> There are a lot of risks that might crop up as a tunneling project develops, and it's crucial to be aware of them. Due to the unexpected nature of tunneling projects and the interconnectedness of risk occurrences, the risk assessment approach presents a significant challenge. The purpose of this study is to provide a hybrid FDEMATEL-ANP model to help prioritize risks during tunnel construction projects. The ambiguity in expert judgments and the relative severity of interdependencies across risk occurrences are both taken into consideration by this model, thanks to the Fuzzy Decision-Making Trial and Evaluation Laboratory (FDEMATEL). The Analytic Network Process (ANP) method is used to rank priorities and assess project risks. The authors provide a case study of a subway tunneling construction project to back up the validity of their methodology. The results showed that the proposed method successfully isolated key risk factors and elucidated their interplay in the case study. The proposed method has the potential to become a helpful resource for evaluating dangers associated with tunnel construction projects. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=risk" title="risk">risk</a>, <a href="https://publications.waset.org/abstracts/search?q=prioritization" title=" prioritization"> prioritization</a>, <a href="https://publications.waset.org/abstracts/search?q=FDEMATEL" title=" FDEMATEL"> FDEMATEL</a>, <a href="https://publications.waset.org/abstracts/search?q=ANP" title=" ANP"> ANP</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling%20construction%20projects" title=" tunneling construction projects"> tunneling construction projects</a> </p> <a href="https://publications.waset.org/abstracts/157100/risk-prioritization-in-tunneling-construction-projects" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/157100.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">92</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">104</span> A Survey of Domain Name System Tunneling Attacks: Detection and Prevention</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Lawrence%20Williams">Lawrence Williams</a> </p> <p class="card-text"><strong>Abstract:</strong></p> As the mechanism which converts domains to internet protocol (IP) addresses, Domain Name System (DNS) is an essential part of internet usage. It was not designed securely and can be subject to attacks. DNS attacks have become more frequent and sophisticated and the need for detecting and preventing them becomes more important for the modern network. DNS tunnelling attacks are one type of attack that are primarily used for distributed denial-of-service (DDoS) attacks and data exfiltration. Discussion of different techniques to detect and prevent DNS tunneling attacks is done. The methods, models, experiments, and data for each technique are discussed. A proposal about feasibility is made. Future research on these topics is proposed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DNS" title="DNS">DNS</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling" title=" tunneling"> tunneling</a>, <a href="https://publications.waset.org/abstracts/search?q=exfiltration" title=" exfiltration"> exfiltration</a>, <a href="https://publications.waset.org/abstracts/search?q=botnet" title=" botnet"> botnet</a> </p> <a href="https://publications.waset.org/abstracts/159239/a-survey-of-domain-name-system-tunneling-attacks-detection-and-prevention" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/159239.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">75</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">103</span> High Photosensitivity and Broad Spectral Response of Multi-Layered Germanium Sulfide Transistors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rajesh%20Kumar%20Ulaganathan">Rajesh Kumar Ulaganathan</a>, <a href="https://publications.waset.org/abstracts/search?q=Yi-Ying%20Lu"> Yi-Ying Lu</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Jung%20Kuo"> Chia-Jung Kuo</a>, <a href="https://publications.waset.org/abstracts/search?q=Srinivasa%20Reddy%20Tamalampudi"> Srinivasa Reddy Tamalampudi</a>, <a href="https://publications.waset.org/abstracts/search?q=Raman%20Sankar"> Raman Sankar</a>, <a href="https://publications.waset.org/abstracts/search?q=Fang%20Cheng%20Chou"> Fang Cheng Chou</a>, <a href="https://publications.waset.org/abstracts/search?q=Yit-Tsong%20Chen"> Yit-Tsong Chen </a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we report the optoelectronic properties of multi-layered GeS nanosheets (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ~ 206 AW-1 under illumination of 1.5 µW/cm2 at  = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ~ 206 AW-1 is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the two-dimensional (2D) realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ~ 655 AW-1 operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ~ 4.0 × 104 %) and specific detectivity (D* ~ 2.35 × 1013 Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability with a response time of ~7 ms over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, fast response, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=germanium%20sulfide" title="germanium sulfide">germanium sulfide</a>, <a href="https://publications.waset.org/abstracts/search?q=photodetector" title=" photodetector"> photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=photoresponsivity" title=" photoresponsivity"> photoresponsivity</a>, <a href="https://publications.waset.org/abstracts/search?q=external%20quantum%20efficiency" title=" external quantum efficiency"> external quantum efficiency</a>, <a href="https://publications.waset.org/abstracts/search?q=specific%20detectivity" title=" specific detectivity "> specific detectivity </a> </p> <a href="https://publications.waset.org/abstracts/39141/high-photosensitivity-and-broad-spectral-response-of-multi-layered-germanium-sulfide-transistors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/39141.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">541</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">102</span> Metal-Semiconductor-Metal Photodetector Based on Porous In0.08Ga0.92N</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Saleh%20H.%20Abud">Saleh H. Abud</a>, <a href="https://publications.waset.org/abstracts/search?q=Z.%20Hassan"> Z. Hassan</a>, <a href="https://publications.waset.org/abstracts/search?q=F.%20K.%20Yam"> F. K. Yam</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15 min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390 nm chopped light. Finally, the sensitivity and quantum efficiency were also studied. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=porous%20InGaN" title="porous InGaN">porous InGaN</a>, <a href="https://publications.waset.org/abstracts/search?q=photoluminescence" title=" photoluminescence"> photoluminescence</a>, <a href="https://publications.waset.org/abstracts/search?q=SMS%20photodetector" title=" SMS photodetector"> SMS photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=atomic%20force%20microscopy" title=" atomic force microscopy"> atomic force microscopy</a> </p> <a href="https://publications.waset.org/abstracts/4022/metal-semiconductor-metal-photodetector-based-on-porous-in008ga092n" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/4022.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">489</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">101</span> Tunneling Current Switching in the Coupled Quantum Dots by Means of External Field</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Vladimir%20Mantsevich">Vladimir Mantsevich</a>, <a href="https://publications.waset.org/abstracts/search?q=Natalya%20Maslova"> Natalya Maslova</a>, <a href="https://publications.waset.org/abstracts/search?q=Petr%20Arseyev"> Petr Arseyev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations between localized electrons by means of Heisenberg equations for pseudo operators with constraint. Special role of multi-electronic states was demonstrated. Various single-electron levels location relative to the sample Fermi level and to the applied bias value in symmetric tunneling contact were investigated. Rabi frequency tuning results in the single-electron energy levels spacing. We revealed the appearance of negative tunneling conductivity and demonstrated multiple switching "on" and "off" of the tunneling current depending on the Coulomb correlations value, Rabi frequency amplitude and energy levels spacing. We proved that Coulomb correlations strongly influence the system behavior. We demonstrated the presence of multi-stability in the coupled QDs with Coulomb correlations when single value of the tunneling current amplitude corresponds to the two values of Rabi frequency in the case when both single-electron energy levels are located slightly above eV and are close to each other. This effect disappears when the single-electron energy levels spacing increases. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Coulomb%20correlations" title="Coulomb correlations">Coulomb correlations</a>, <a href="https://publications.waset.org/abstracts/search?q=negative%20tunneling%20conductivity" title=" negative tunneling conductivity"> negative tunneling conductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20dots" title=" quantum dots"> quantum dots</a>, <a href="https://publications.waset.org/abstracts/search?q=rabi%20frequency" title=" rabi frequency "> rabi frequency </a> </p> <a href="https://publications.waset.org/abstracts/24887/tunneling-current-switching-in-the-coupled-quantum-dots-by-means-of-external-field" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/24887.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">451</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">100</span> Study the effect of bulk traps on Solar Blind Photodetector Based on an IZTO/β Ga2O3/ITO Schottky Diode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Laboratory%20of%20Semiconducting">Laboratory of Semiconducting</a>, <a href="https://publications.waset.org/abstracts/search?q=Metallic%20Materials%20%28LMSM%29%20Biskra%20Algeria">Metallic Materials (LMSM) Biskra Algeria</a> </p> <p class="card-text"><strong>Abstract:</strong></p> InZnSnO2 (IZTO)/β-Ga2O3 Schottky solar barrier photodetector (PhD) exposed to 255 nm was simulated and compared to the measurement. Numerical simulations successfully reproduced the photocurrent at reverse bias and response by taking into account several factors, such as conduction mechanisms and material parameters. By adopting reducing the density of the trap as an improvement. The effect of reducing the bulk trap densities on the photocurrent, response, and time-dependent (continuous conductivity) was studied. As the trap density decreased, the photocurrent increased. The response was 0.04 A/W for the low Ga2O3 trap density. The estimated decay time for the lowest intensity ET (0.74, 1.04 eV) is 0.05 s and is shorter at ∼0.015 s for ET (0.55 eV). This indicates that the shallow traps had the dominant effect (ET = 0.55 eV) on the continuous photoconductivity phenomenon. Furthermore, with decreasing trap densities, this PhD can be considered as a self-powered solar-blind photodiode (SBPhD). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=IZTO%2F%CE%B2-Ga2O3" title="IZTO/β-Ga2O3">IZTO/β-Ga2O3</a>, <a href="https://publications.waset.org/abstracts/search?q=self-powered%20solar-blind%20photodetector" title=" self-powered solar-blind photodetector"> self-powered solar-blind photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=numerical%20simulation" title=" numerical simulation"> numerical simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=bulk%20traps" title=" bulk traps"> bulk traps</a> </p> <a href="https://publications.waset.org/abstracts/167378/study-the-effect-of-bulk-traps-on-solar-blind-photodetector-based-on-an-iztov-ga2o3ito-schottky-diode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/167378.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">86</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">99</span> Asymmetrically Contacted Tellurium Short-Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Huang%20Haoxin">Huang Haoxin</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Large dark current at room temperature has long been the major bottleneck that impedes the development of high-performance infrared photodetectors towards miniaturization and integration. Although infrared photodetectors based on layered 2D narrow bandgap semiconductors have shown admirable advantages compared with those based on conventional compounds, which typically suffer from expensive cryogenic operations, it is still urgent to develop a simple but effective strategy to further reduce the dark current. Herein, a tellurium (Te) based infrared photodetector is reported with a specifically designed asymmetric electrical contact area. The deliberately introduced asymmetric electrical contact raises the electric field intensity difference in the Te channel near the drain and the source electrodes, resulting in spontaneous asymmetric carrier diffusion under global infrared light illumination under zero bias. Specifically, the Te-based photodetector presents promising detector performance at room temperature, including a low dark current of≈1 nA, an ultrahigh photocurrent/dark current ratio of 1.57×10⁴, a high specific detectivity (D*) of 3.24×10⁹ Jones, and relatively fast response speed of ≈720 μs at zero bias. The results prove that the simple design of asymmetric electrical contact areas can provide a promising solution to high-performance 2D semiconductor-based infrared photodetectors working at room temperature. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=asymmetrical%20contact" title="asymmetrical contact">asymmetrical contact</a>, <a href="https://publications.waset.org/abstracts/search?q=tellurium" title=" tellurium"> tellurium</a>, <a href="https://publications.waset.org/abstracts/search?q=dark%20current" title=" dark current"> dark current</a>, <a href="https://publications.waset.org/abstracts/search?q=infrared%20photodetector" title=" infrared photodetector"> infrared photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=sensitivity" title=" sensitivity"> sensitivity</a> </p> <a href="https://publications.waset.org/abstracts/185792/asymmetrically-contacted-tellurium-short-wave-infrared-photodetector-with-low-dark-current-and-high-sensitivity-at-room-temperature" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/185792.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">51</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">98</span> Nano-Sensors: Search for New Features</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=I.%20Filikhin">I. Filikhin</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Vlahovic"> B. Vlahovic</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We focus on a novel type of detection based on electron tunneling properties of double nanoscale structures in semiconductor materials. Semiconductor heterostructures as quantum wells (QWs), quantum dots (QDs), and quantum rings (QRs) may have energy level structure of several hundred of electron confinement states. The single electron spectra of the double quantum objects (DQW, DQD, and DQR) were studied in our previous works with relation to the electron localization and tunneling between the objects. The wave function of electron may be localized in one of the QDs or be delocalized when it is spread over the whole system. The localizing-delocalizing tunneling occurs when an electron transition between both states is possible. The tunneling properties of spectra differ strongly for “regular” and “chaotic” systems. We have shown that a small violation of the geometry drastically affects localization of electron. In particular, such violations lead to the elimination of the delocalized states of the system. The same symmetry violation effect happens if electrical or magnetic fields are applied. These phenomena could be used to propose a new type of detection based on the high sensitivity of charge transport between double nanostructures and small violations of the shapes. It may have significant technological implications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=double%20quantum%20dots" title="double quantum dots">double quantum dots</a>, <a href="https://publications.waset.org/abstracts/search?q=single%20electron%20levels" title=" single electron levels"> single electron levels</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling" title=" tunneling"> tunneling</a>, <a href="https://publications.waset.org/abstracts/search?q=electron%20localizations" title=" electron localizations"> electron localizations</a> </p> <a href="https://publications.waset.org/abstracts/24024/nano-sensors-search-for-new-features" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/24024.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">505</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">97</span> Multiple Negative-Differential Resistance Regions Based on AlN/GaN Resonant Tunneling Structures by the Vertical Growth of Molecular Beam Epitaxy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yao%20Jiajia">Yao Jiajia</a>, <a href="https://publications.waset.org/abstracts/search?q=Wu%20Guanlin"> Wu Guanlin</a>, <a href="https://publications.waset.org/abstracts/search?q=LIU%20Fang"> LIU Fang</a>, <a href="https://publications.waset.org/abstracts/search?q=Xue%20Junshuai"> Xue Junshuai</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhang%20Jincheng"> Zhang Jincheng</a>, <a href="https://publications.waset.org/abstracts/search?q=Hao%20Yue"> Hao Yue</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Resonant tunneling diodes (RTDs) based on GaN have been extensively studied. However, no results of multiple logic states achieved by RTDs were reported by the methods of epitaxy in the GaN materials. In this paper, the multiple negative-differential resistance regions by combining two discrete double-barrier RTDs in series have been first demonstrated. Plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow structures consisting of two vertical RTDs. The substrate was a GaN-on-sapphire template. Each resonant tunneling structure was composed of a double barrier of AlN and a single well of GaN with undoped 4-nm space layers of GaN on each side. The AlN barriers were 1.5 nm thick, and the GaN well was 2 nm thick. The resonant tunneling structures were separated from each other by 30-nm thick n+ GaN layers. The bottom and top layers of the structures, grown neighboring to the spacer layers that consist of 200-nm-thick n+ GaN. These devices with two tunneling structures exhibited uniform peaks and valleys current and also had two negative differential resistance NDR regions equally spaced in bias voltage. The current-voltage (I-V) characteristics of resonant tunneling structures with diameters of 1 and 2 μm were analyzed in this study. These structures exhibit three stable operating points, which are investigated in detail. This research demonstrates that using molecular beam epitaxy MBE to vertically grow multiple resonant tunneling structures is a promising method for achieving multiple negative differential resistance regions and stable logic states. These findings have significant implications for the development of digital circuits capable of multi-value logic, which can be achieved with a small number of devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN" title="GaN">GaN</a>, <a href="https://publications.waset.org/abstracts/search?q=AlN" title=" AlN"> AlN</a>, <a href="https://publications.waset.org/abstracts/search?q=RTDs" title=" RTDs"> RTDs</a>, <a href="https://publications.waset.org/abstracts/search?q=MBE" title=" MBE"> MBE</a>, <a href="https://publications.waset.org/abstracts/search?q=logic%20state" title=" logic state"> logic state</a> </p> <a href="https://publications.waset.org/abstracts/165676/multiple-negative-differential-resistance-regions-based-on-alngan-resonant-tunneling-structures-by-the-vertical-growth-of-molecular-beam-epitaxy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/165676.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">92</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">96</span> Two-Dimensional Material-Based Negative Differential Resistance Device with High Peak-to- Valley Current Ratio for Multi-Valued Logic Circuits</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kwan-Ho%20Kim">Kwan-Ho Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Jin-Hong%20Park"> Jin-Hong Park</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The multi-valued logic (MVL) circuits, which can handle more than two logic states, are one of the promising solutions to overcome the bit density limitations of conventional binary logic systems. Recently, tunneling devices such as Esaki diode and resonant tunneling diode (RTD) have been extensively explored to construct the MVL circuits. These tunneling devices present a negative differential resistance (NDR) phenomenon in which a current decreases as a voltage increases in a specific applied voltage region. Due to this non-monotonic current behavior, the tunneling devices have more than two threshold voltages, consequently enabling construction of MVL circuits. Recently, the emergence of two dimensional (2D) van der Waals (vdW) crystals has opened up the possibility to fabricate such tunneling devices easily. Owing to the defect-free surface of the 2D crystals, a very abrupt junction interface could be formed through a simple stacking process, which subsequently allowed the implementation of a high-performance tunneling device. Here, we report a vdW heterostructure based tunneling device with multiple threshold voltages, which was fabricated with black phosphorus (BP) and hafnium diselenide (HfSe₂). First, we exfoliated BP on the SiO₂ substrate and then transferred HfSe₂ on BP using dry transfer method. The BP and HfSe₂ form type-Ⅲ heterojunction so that the highly doped n+/p+ interface can be easily implemented without additional electrical or chemical doping process. Owing to high natural doping at the junction, record high peak to valley ratio (PVCR) of 16 was observed to the best our knowledge in 2D materials based NDR device. Furthermore, based on this, we first demonstrate the feasibility of the ternary latch by connecting two multi-threshold voltage devices in series. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=two%20dimensional%20van%20der%20Waals%20crystal" title="two dimensional van der Waals crystal">two dimensional van der Waals crystal</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-valued%20logic" title=" multi-valued logic"> multi-valued logic</a>, <a href="https://publications.waset.org/abstracts/search?q=negative%20differential%20resistnace" title=" negative differential resistnace"> negative differential resistnace</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling%20device" title=" tunneling device"> tunneling device</a> </p> <a href="https://publications.waset.org/abstracts/93870/two-dimensional-material-based-negative-differential-resistance-device-with-high-peak-to-valley-current-ratio-for-multi-valued-logic-circuits" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/93870.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">213</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">95</span> Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ahmed%20Shariful%20Alam">Ahmed Shariful Alam</a>, <a href="https://publications.waset.org/abstracts/search?q=Abu%20Hena%20M.%20Mustafa%20Kamal"> Abu Hena M. Mustafa Kamal</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Abdul%20Rahman"> M. Abdul Rahman</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Nasmus%20Sakib%20Khan%20Shabbir"> M. Nasmus Sakib Khan Shabbir</a>, <a href="https://publications.waset.org/abstracts/search?q=Atiqul%20Islam"> Atiqul Islam</a> </p> <p class="card-text"><strong>Abstract:</strong></p> According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. <em>35mV</em> supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was <em>3.5V</em>. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ITRS" title="ITRS">ITRS</a>, <a href="https://publications.waset.org/abstracts/search?q=enhancement%20type%20MOSFET" title=" enhancement type MOSFET"> enhancement type MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=island" title=" island"> island</a>, <a href="https://publications.waset.org/abstracts/search?q=DC%20analysis" title=" DC analysis"> DC analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=transient%20analysis" title=" transient analysis"> transient analysis</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20consumption" title=" power consumption"> power consumption</a>, <a href="https://publications.waset.org/abstracts/search?q=background%20charge%20co-tunneling" title=" background charge co-tunneling"> background charge co-tunneling</a> </p> <a href="https://publications.waset.org/abstracts/17949/replacing-mosfets-with-single-electron-transistors-set-to-reduce-power-consumption-of-an-inverter-circuit" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/17949.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">526</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">94</span> Sewer Culvert Installation Method to Accommodate Underground Construction in an Urban Area with Narrow Streets</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Osamu%20Igawa">Osamu Igawa</a>, <a href="https://publications.waset.org/abstracts/search?q=Hiroshi%20Kouchiwa"> Hiroshi Kouchiwa</a>, <a href="https://publications.waset.org/abstracts/search?q=Yuji%20Ito"> Yuji Ito</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In recent years, a reconstruction project for sewer pipelines has been progressing in Japan with the aim of renewing old sewer culverts. However, it is difficult to secure a sufficient base area for shafts in an urban area because many streets are narrow with a complex layout. As a result, construction in such urban areas is generally very demanding. In urban areas, there is a strong requirement for a safe, reliable and economical construction method that does not disturb the public’s daily life and urban activities. With this in mind, we developed a new construction method called the 'shield switching type micro-tunneling method' which integrates the micro-tunneling method and shield method. In this method, pipeline is constructed first for sections that are gently curved or straight using the economical micro-tunneling method, and then the method is switched to the shield method for sections with a sharp curve or a series of curves without establishing an intermediate shaft. This paper provides the information, features and construction examples of this newly developed method. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=micro-tunneling%20method" title="micro-tunneling method">micro-tunneling method</a>, <a href="https://publications.waset.org/abstracts/search?q=secondary%20lining%20applied%20RC%20segment" title=" secondary lining applied RC segment"> secondary lining applied RC segment</a>, <a href="https://publications.waset.org/abstracts/search?q=sharp%20curve" title=" sharp curve"> sharp curve</a>, <a href="https://publications.waset.org/abstracts/search?q=shield%20method" title=" shield method"> shield method</a>, <a href="https://publications.waset.org/abstracts/search?q=switching%20type" title=" switching type"> switching type</a> </p> <a href="https://publications.waset.org/abstracts/4418/sewer-culvert-installation-method-to-accommodate-underground-construction-in-an-urban-area-with-narrow-streets" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/4418.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">404</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">93</span> Double Negative Differential Resistance Features in GaN-Based Bipolar Resonance Tunneling Diodes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Renjie%20Liu">Renjie Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=Junshuai%20Xue"> Junshuai Xue</a>, <a href="https://publications.waset.org/abstracts/search?q=Jiajia%20Yao"> Jiajia Yao</a>, <a href="https://publications.waset.org/abstracts/search?q=Guanlin%20Wu"> Guanlin Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Zumao%20L"> Zumao L</a>, <a href="https://publications.waset.org/abstracts/search?q=Xueyan%20Yang"> Xueyan Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=Fang%20Liu"> Fang Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhuang%20Guo"> Zhuang Guo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Here, we report the study of the performance of AlN/GaN bipolar resonance tunneling diodes (BRTDs) using numerical simulations. The I-V characteristics of BRTDs show double negative differential resistance regions, which exhibit similar peak current density and peak-to-valley current ratio (PVCR). Investigations show that the PVCR can approach 4.6 for the first and 5.75 for the second negative resistance region. The appearance of the two negative differential resistance regions is realized by changing the collector material of conventional GaN RTD to P-doped GaN. As the bias increases, holes in the P-region and electrons in the N-region undergo resonant tunneling, respectively, resulting in two negative resistance regions. The appearance of two negative resistance regions benefits from the high AlN barrier and the precise regulation of the potential well thickness. This result shows the promise of GaN BRTDs in the development of multi-valued logic circuits. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN%20bipolar%20resonant%20tunneling%20diode" title="GaN bipolar resonant tunneling diode">GaN bipolar resonant tunneling diode</a>, <a href="https://publications.waset.org/abstracts/search?q=double%20negative%20differential%20resistance%20regions" title=" double negative differential resistance regions"> double negative differential resistance regions</a>, <a href="https://publications.waset.org/abstracts/search?q=peak%20to%20valley%20current%20ratio" title=" peak to valley current ratio"> peak to valley current ratio</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-valued%20logic" title=" multi-valued logic"> multi-valued logic</a> </p> <a href="https://publications.waset.org/abstracts/166147/double-negative-differential-resistance-features-in-gan-based-bipolar-resonance-tunneling-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/166147.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">163</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">92</span> Some Issues with Extension of an HPC Cluster</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Pil%20Seong%20Park">Pil Seong Park</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Homemade HPC clusters are widely used in many small labs, because they are easy to build and cost-effective. Even though incremental growth is an advantage of clusters, it results in heterogeneous systems anyhow. Instead of adding new nodes to the cluster, we can extend clusters to include some other Internet servers working independently on the same LAN, so that we can make use of their idle times, especially during the night. However extension across a firewall raises some security problems with NFS. In this paper, we propose a method to solve such a problem using SSH tunneling, and suggest a modified structure of the cluster that implements it. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=extension%20of%20HPC%20clusters" title="extension of HPC clusters">extension of HPC clusters</a>, <a href="https://publications.waset.org/abstracts/search?q=security" title=" security"> security</a>, <a href="https://publications.waset.org/abstracts/search?q=NFS" title=" NFS"> NFS</a>, <a href="https://publications.waset.org/abstracts/search?q=SSH%20tunneling" title=" SSH tunneling"> SSH tunneling</a> </p> <a href="https://publications.waset.org/abstracts/8521/some-issues-with-extension-of-an-hpc-cluster" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8521.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">426</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">91</span> Mechanism of Sinkhole Development on Water-Bearing Soft Ground Tunneling</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=H.%20J.%20Kim">H. J. Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20H.%20Kim"> K. H. Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20H.%20Park"> N. H. Park</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20T.%20Nam"> K. T. Nam</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.%20H.%20Jung"> Y. H. Jung</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20H.%20Kim"> T. H. Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=J.%20H.%20Shin"> J. H. Shin</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Underground excavations in an urban area can cause various geotechnical problems such as ground loss and lowering of groundwater level. When the ground loss becomes uncontrollably large, sinkholes can be developed to the ground surface. A sinkhole is commonly known as the natural phenomenon associated with lime rock areas. However, sinkholes in urban areas due to pressurized sewers and/or tunneling are also frequently reported. In this study, mechanism of a sinkhole developed at the site ‘A’ where a tunneling work underwent is investigated. The sinkhole occurred in the sand strata with the high level of groundwater when excavating a tunnel of which diameter is 3.6 m. The sinkhole was progressed in two steps. The first step began with the local failure around the tunnel face followed by tons of groundwater inflow, and the second step was triggered by the TBM (Tunnel Boring Machine) chamber opening which led to the progressive general failure. The possibility of the sinkhole was evaluated by using Limit Equilibrium Method (LEM), and critical height was evaluated by the empirical stability chart. It is found that the lowering of the face pressure and inflow of groundwater into the tunnel face turned to be the main reason for the sinkhole. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=limit%20equilibrium%20method" title="limit equilibrium method">limit equilibrium method</a>, <a href="https://publications.waset.org/abstracts/search?q=sinkhole" title=" sinkhole"> sinkhole</a>, <a href="https://publications.waset.org/abstracts/search?q=stability%20chart" title=" stability chart"> stability chart</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling" title=" tunneling"> tunneling</a> </p> <a href="https://publications.waset.org/abstracts/77044/mechanism-of-sinkhole-development-on-water-bearing-soft-ground-tunneling" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/77044.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">251</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">90</span> Laser Irradiated GeSn Photodetector for Improved Infrared Photodetection</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Patrik%20Scajev">Patrik Scajev</a>, <a href="https://publications.waset.org/abstracts/search?q=Pavels%20Onufrijevs"> Pavels Onufrijevs</a>, <a href="https://publications.waset.org/abstracts/search?q=Algirdas%20Mekys"> Algirdas Mekys</a>, <a href="https://publications.waset.org/abstracts/search?q=Tadas%20Malinauskas"> Tadas Malinauskas</a>, <a href="https://publications.waset.org/abstracts/search?q=Dominykas%20Augulis"> Dominykas Augulis</a>, <a href="https://publications.waset.org/abstracts/search?q=Liudvikas%20Subacius"> Liudvikas Subacius</a>, <a href="https://publications.waset.org/abstracts/search?q=Kuo-Chih%20Lee"> Kuo-Chih Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Jevgenijs%20Kaupuzs"> Jevgenijs Kaupuzs</a>, <a href="https://publications.waset.org/abstracts/search?q=Arturs%20Medvids"> Arturs Medvids</a>, <a href="https://publications.waset.org/abstracts/search?q=Hung%20Hsiang%20Cheng"> Hung Hsiang Cheng </a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, we focused on the optoelectronic properties of the photodiodes prepared by using 200 nm thick Ge₀.₉₅Sn₀.₀₅ epitaxial layers on Ge/n-Si substrate with aluminum contacts. Photodiodes were formed on non-irradiated and Nd: YAG laser irradiated Ge₀.₉₅Sn₀.₀₅ layers. The samples were irradiated by pulsed Nd: YAG laser with 136.7-462.6 MW/cm² intensity. The photodiodes were characterized by using short laser pulses with the wavelength in the 2.0-2.6 μm range. The laser-irradiated diode was found more sensitive in the long-wavelength range due to laser-induced Sn atoms redistribution providing formation of graded bandgap structure. Sub-millisecond photocurrent relaxation in the diodes revealed their suitability for image sensors. Our findings open the perspective for improving the photo-sensitivity of GeSn alloys in the mid-infrared by pulsed laser processing. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GeSn" title="GeSn">GeSn</a>, <a href="https://publications.waset.org/abstracts/search?q=laser%20processing" title=" laser processing"> laser processing</a>, <a href="https://publications.waset.org/abstracts/search?q=photodetector" title=" photodetector"> photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=infrared" title=" infrared"> infrared</a> </p> <a href="https://publications.waset.org/abstracts/131848/laser-irradiated-gesn-photodetector-for-improved-infrared-photodetection" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/131848.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">153</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">89</span> Performance of Armchair Graphene Nanoribbon Resonant Tunneling Diode under Uniaxial Strain</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Milad%20Zoghi">Milad Zoghi</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Zahangir%20Kabir"> M. Zahangir Kabir</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Performance of armchair graphene nanoribbon (AGNR) resonant tunneling diodes (RTD) alter if they go under strain. This may happen due to either using stretchable substrates or real working conditions such as heat generation. Therefore, it is informative to understand how mechanical deformations such as uniaxial strain can impact the performance of AGNR RTDs. In this paper, two platforms of AGNR RTD consist of width-modified AGNR RTD and electric-field modified AGNR RTD are subjected to both compressive and tensile uniaxial strain ranging from -2% to +2%. It is found that characteristics of AGNR RTD markedly change under both compressive and tensile strain. In particular, peak to valley ratio (PVR) can be totally disappeared upon strong enough strain deformation. Numerical tight binding (TB) coupled with Non-Equilibrium Green's Function (NEGF) is derived for this study to calculate corresponding Hamiltonian matrices and transport properties. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=armchair%20graphene%20nanoribbon" title="armchair graphene nanoribbon">armchair graphene nanoribbon</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20tunneling%20diode" title=" resonant tunneling diode"> resonant tunneling diode</a>, <a href="https://publications.waset.org/abstracts/search?q=uniaxial%20strain" title=" uniaxial strain"> uniaxial strain</a>, <a href="https://publications.waset.org/abstracts/search?q=peak%20to%20valley%20ratio" title=" peak to valley ratio"> peak to valley ratio</a> </p> <a href="https://publications.waset.org/abstracts/101092/performance-of-armchair-graphene-nanoribbon-resonant-tunneling-diode-under-uniaxial-strain" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/101092.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">178</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">88</span> Effect of Al on Glancing Angle Deposition Synthesized In₂O₃ Nanocolumn for Photodetector Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chitralekha%20Ngangbam">Chitralekha Ngangbam</a>, <a href="https://publications.waset.org/abstracts/search?q=Aniruddha%20Mondal"> Aniruddha Mondal</a>, <a href="https://publications.waset.org/abstracts/search?q=Naorem%20Khelchand%20Singh"> Naorem Khelchand Singh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Aluminium (Al) doped In2O3 (Indium Oxide) nanocolumn array was synthesized by glancing angle deposition (GLAD) technique on Si (n-type) substrate for photodetector application. The sample was characterized by scanning electron microscopy (SEM). The average diameter of the nanocolumn was calculated from the top view of the SEM image and found to be ∼80 nm. The length of the nanocolumn (~500 nm) was calculated from cross sectional SEM image and it shows that the nanocolumns are perpendicular to the substrate. The EDX analysis confirmed the presence of Al (Aluminium), In (Indium), O (Oxygen) elements in the samples. The XRD patterns of the Al-doped In2O3 nanocolumn show the presence of different phases of the Al doped In2O3 nanocolumn i.e. (222) and (622). Three different peaks were observed from the PL analysis of Al doped In2O3 nanocolumn at 365 nm, 415 nm and 435 nm respectively. The peak at PL emission at 365 nm can be attributed to the near band gap transition of In2O3 whereas the peaks at 415 nm and 435 nm can be attributed to the trap state emissions due to oxygen vacancies and oxygen–indium vacancy centre in Al doped In2O3 nanocolumn. The current-voltage (I–V) characteristics of the Al doped In2O3 nanocolumn based detector was measured through the Au Schottky contact. The devices were then examined under the halogen light (20 W) illumination for photocurrent measurement. The Al-doped In2O3 nanocolumn based optical detector showed high conductivity and low turn on voltage at 0.69 V under white light illumination. A maximum photoresponsivity of 82 A/W at 380 nm was observed for the device. The device shows a high internal gain of ~267 at UV region (380 nm) and ∼127 at visible region (760 nm). Also the rise time and fall time for the device at 650 nm is 0.15 and 0.16 sec respectively which makes it suitable for fast response detector. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=glancing%20angle%20deposition" title="glancing angle deposition">glancing angle deposition</a>, <a href="https://publications.waset.org/abstracts/search?q=nanocolumn" title=" nanocolumn"> nanocolumn</a>, <a href="https://publications.waset.org/abstracts/search?q=semiconductor" title=" semiconductor"> semiconductor</a>, <a href="https://publications.waset.org/abstracts/search?q=photodetector" title=" photodetector"> photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=indium%20oxide" title=" indium oxide"> indium oxide</a> </p> <a href="https://publications.waset.org/abstracts/83178/effect-of-al-on-glancing-angle-deposition-synthesized-in2o3-nanocolumn-for-photodetector-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/83178.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">180</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">87</span> Series Connected GaN Resonant Tunneling Diodes for Multiple-Valued Logic</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fang%20Liu">Fang Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=JunShuai%20Xue"> JunShuai Xue</a>, <a href="https://publications.waset.org/abstracts/search?q=JiaJia%20Yao"> JiaJia Yao</a>, <a href="https://publications.waset.org/abstracts/search?q=XueYan%20Yang"> XueYan Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=ZuMao%20Li"> ZuMao Li</a>, <a href="https://publications.waset.org/abstracts/search?q=GuanLin%20Wu"> GuanLin Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=HePeng%20Zhang"> HePeng Zhang</a>, <a href="https://publications.waset.org/abstracts/search?q=ZhiPeng%20Sun"> ZhiPeng Sun</a> </p> <p class="card-text"><strong>Abstract:</strong></p> III-Nitride resonant tunneling diode (RTD) is one of the most promising candidates for multiple-valued logic (MVL) elements. Here, we report a monolithic integration of GaN resonant tunneling diodes to realize multiple negative differential resistance (NDR) regions for MVL application. GaN RTDs, composed of a 2 nm quantum well embedded in two 1 nm quantum barriers, are grown by plasma-assisted molecular beam epitaxy on free-standing c-plane GaN substrates. Negative differential resistance characteristic with a peak current density of 178 kA/cm² in conjunction with a peak-to-valley current ratio (PVCR) of 2.07 is observed. Statistical properties exhibit high consistency showing a peak current density standard deviation of almost 1%, laying the foundation for the monolithic integration. After complete electrical isolation, two diodes of the designed same area are connected in series. By solving the Poisson equation and Schrodinger equation in one dimension, the energy band structure is calculated to explain the transport mechanism of the differential negative resistance phenomenon. Resonant tunneling events in a sequence of the series-connected RTD pair (SCRTD) form multiple NDR regions with nearly equal peak current, obtaining three stable operating states corresponding to ternary logic. A frequency multiplier circuit achieved using this integration is demonstrated, attesting to the robustness of this multiple peaks feature. This article presents a monolithic integration of SCRTD with multiple NDR regions driven by the resonant tunneling mechanism, which can be applied to a multiple-valued logic field, promising a fast operation speed and a great reduction of circuit complexity and demonstrating a new solution for nitride devices to break through the limitations of binary logic. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN%20resonant%20tunneling%20diode" title="GaN resonant tunneling diode">GaN resonant tunneling diode</a>, <a href="https://publications.waset.org/abstracts/search?q=multiple-valued%20logic%20system" title=" multiple-valued logic system"> multiple-valued logic system</a>, <a href="https://publications.waset.org/abstracts/search?q=frequency%20multiplier" title=" frequency multiplier"> frequency multiplier</a>, <a href="https://publications.waset.org/abstracts/search?q=negative%20differential%20resistance" title=" negative differential resistance"> negative differential resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=peak-to-valley%20current%20ratio" title=" peak-to-valley current ratio"> peak-to-valley current ratio</a> </p> <a href="https://publications.waset.org/abstracts/163097/series-connected-gan-resonant-tunneling-diodes-for-multiple-valued-logic" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/163097.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">81</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">86</span> Monolithic Integrated GaN Resonant Tunneling Diode Pair with Picosecond Switching Time for High-speed Multiple-valued Logic System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fang%20Liu">Fang Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=JiaJia%20Yao"> JiaJia Yao</a>, <a href="https://publications.waset.org/abstracts/search?q=GuanLin%20Wu"> GuanLin Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=ZuMaoLi"> ZuMaoLi</a>, <a href="https://publications.waset.org/abstracts/search?q=XueYan%20Yang"> XueYan Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=HePeng%20Zhang"> HePeng Zhang</a>, <a href="https://publications.waset.org/abstracts/search?q=ZhiPeng%20Sun"> ZhiPeng Sun</a>, <a href="https://publications.waset.org/abstracts/search?q=JunShuai%20Xue"> JunShuai Xue</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The explosive increasing needs of data processing and information storage strongly drive the advancement of the binary logic system to multiple-valued logic system. Inherent negative differential resistance characteristic, ultra-high-speed switching time, and robust anti-irradiation capability make III-nitride resonant tunneling diode one of the most promising candidates for multi-valued logic devices. Here we report the monolithic integration of GaN resonant tunneling diodes in series to realize multiple negative differential resistance regions, obtaining at least three stable operating states. A multiply-by-three circuit is achieved by this combination, increasing the frequency of the input triangular wave from f0 to 3f0. The resonant tunneling diodes are grown by plasma-assistedmolecular beam epitaxy on free-standing c-plane GaN substrates, comprising double barriers and a single quantum well both at the atomic level. Device with a peak current density of 183kA/cm² in conjunction with a peak-to-valley current ratio (PVCR) of 2.07 is observed, which is the best result reported in nitride-based resonant tunneling diodes. Microwave oscillation event at room temperature was discovered with a fundamental frequency of 0.31GHz and an output power of 5.37μW, verifying the high repeatability and robustness of our device. The switching behavior measurement was successfully carried out, featuring rise and fall times in the order of picoseconds, which can be used in high-speed digital circuits. Limited by the measuring equipment and the layer structure, the switching time can be further improved. In general, this article presents a novel nitride device with multiple negative differential regions driven by the resonant tunneling mechanism, which can be used in high-speed multiple value logic field with reduced circuit complexity, demonstrating a new solution of nitride devices to break through the limitations of binary logic. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN%20resonant%20tunneling%20diode" title="GaN resonant tunneling diode">GaN resonant tunneling diode</a>, <a href="https://publications.waset.org/abstracts/search?q=negative%20differential%20resistance" title=" negative differential resistance"> negative differential resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=multiple-valued%20logic%20system" title=" multiple-valued logic system"> multiple-valued logic system</a>, <a href="https://publications.waset.org/abstracts/search?q=switching%20time" title=" switching time"> switching time</a>, <a href="https://publications.waset.org/abstracts/search?q=peak-to-valley%20current%20ratio" title=" peak-to-valley current ratio"> peak-to-valley current ratio</a> </p> <a href="https://publications.waset.org/abstracts/157992/monolithic-integrated-gan-resonant-tunneling-diode-pair-with-picosecond-switching-time-for-high-speed-multiple-valued-logic-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/157992.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">100</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">85</span> Single Atom Manipulation with 4 Scanning Tunneling Microscope Technique</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jianshu%20Yang">Jianshu Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=Delphine%20Sordes"> Delphine Sordes</a>, <a href="https://publications.waset.org/abstracts/search?q=Marek%20Kolmer"> Marek Kolmer</a>, <a href="https://publications.waset.org/abstracts/search?q=Christian%20Joachim"> Christian Joachim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Nanoelectronics, for example the calculating circuits integrating at molecule scale logic gates, atomic scale circuits, has been constructed and investigated recently. A major challenge is their functional properties characterization because of the connecting problem from atomic scale to micrometer scale. New experimental instruments and new processes have been proposed therefore. To satisfy a precisely measurement at atomic scale and then connecting micrometer scale electrical integration controller, the technique improvement is kept on going. Our new machine, a low temperature high vacuum four scanning tunneling microscope, as a customer required instrument constructed by Omicron GmbH, is expected to be scaling down to atomic scale characterization. Here, we will present our first testified results about the performance of this new instrument. The sample we selected is Au(111) surface. The measurements have been taken at 4.2 K. The atomic resolution surface structure was observed with each of four scanners with noise level better than 3 pm. With a tip-sample distance calibration by I-z spectra, the sample conductance has been derived from its atomic locally I-V spectra. Furthermore, the surface conductance measurement has been performed using two methods, (1) by landing two STM tips on the surface with sample floating; and (2) by sample floating and one of the landed tips turned to be grounding. In addition, single atom manipulation has been achieved with a modified tip design, which is comparable to a conventional LT-STM. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=low%20temperature%20ultra-high%20vacuum%20four%20scanning%20tunneling%20microscope" title="low temperature ultra-high vacuum four scanning tunneling microscope">low temperature ultra-high vacuum four scanning tunneling microscope</a>, <a href="https://publications.waset.org/abstracts/search?q=nanoelectronics" title=" nanoelectronics"> nanoelectronics</a>, <a href="https://publications.waset.org/abstracts/search?q=point%20contact" title=" point contact"> point contact</a>, <a href="https://publications.waset.org/abstracts/search?q=single%20atom%20manipulation" title=" single atom manipulation"> single atom manipulation</a>, <a href="https://publications.waset.org/abstracts/search?q=tunneling%20resistance" title=" tunneling resistance"> tunneling resistance</a> </p> <a href="https://publications.waset.org/abstracts/31668/single-atom-manipulation-with-4-scanning-tunneling-microscope-technique" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/31668.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">280</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">84</span> 2106 kA/cm² Peak Tunneling Current Density in GaN-Based Resonant Tunneling Diode with an Intrinsic Oscillation Frequency of ~260GHz at Room Temperature</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fang%20Liu">Fang Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=JunShuai%20Xue"> JunShuai Xue</a>, <a href="https://publications.waset.org/abstracts/search?q=JiaJia%20Yao"> JiaJia Yao</a>, <a href="https://publications.waset.org/abstracts/search?q=GuanLin%20Wu"> GuanLin Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=ZuMaoLi"> ZuMaoLi</a>, <a href="https://publications.waset.org/abstracts/search?q=XueYan%20Yang"> XueYan Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=HePeng%20Zhang"> HePeng Zhang</a>, <a href="https://publications.waset.org/abstracts/search?q=ZhiPeng%20Sun"> ZhiPeng Sun</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Terahertz spectra is in great demand since last two decades for many photonic and electronic applications. III-Nitride resonant tunneling diode is one of the promising candidates for portable and compact THz sources. Room temperature microwave oscillator based on GaN/AlN resonant tunneling diode was reported in this work. The devices, grown by plasma-assisted molecular-beam epitaxy on free-standing c-plane GaN substrates, exhibit highly repeatable and robust negative differential resistance (NDR) characteristics at room temperature. To improve the interface quality at the active region in RTD, indium surfactant assisted growth is adopted to enhance the surface mobility of metal atoms on growing film front. Thanks to the lowered valley current associated with the suppression of threading dislocation scattering on low dislocation GaN substrate, a positive peak current density of record-high 2.1 MA/cm2 in conjunction with a peak-to-valley current ratio (PVCR) of 1.2 are obtained, which is the best results reported in nitride-based RTDs up to now considering the peak current density and PVCR values simultaneously. When biased within the NDR region, microwave oscillations are measured with a fundamental frequency of 0.31 GHz, yielding an output power of 5.37 µW. Impedance mismatch results in the limited output power and oscillation frequency described above. The actual measured intrinsic capacitance is only 30fF. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is estimated to be ~260GHz. This work demonstrates a microwave oscillator based on resonant tunneling effect, which can meet the demands of terahertz spectral devices, more importantly providing guidance for the fabrication of the complex nitride terahertz and quantum effect devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaN%20resonant%20tunneling%20diode" title="GaN resonant tunneling diode">GaN resonant tunneling diode</a>, <a href="https://publications.waset.org/abstracts/search?q=peak%20current%20density" title=" peak current density"> peak current density</a>, <a href="https://publications.waset.org/abstracts/search?q=microwave%20oscillation" title=" microwave oscillation"> microwave oscillation</a>, <a href="https://publications.waset.org/abstracts/search?q=intrinsic%20capacitance" title=" intrinsic capacitance"> intrinsic capacitance</a> </p> <a href="https://publications.waset.org/abstracts/148950/2106-kacm2-peak-tunneling-current-density-in-gan-based-resonant-tunneling-diode-with-an-intrinsic-oscillation-frequency-of-260ghz-at-room-temperature" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/148950.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">139</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=photon-assisted%20tunneling%20photodetector&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=photon-assisted%20tunneling%20photodetector&page=3">3</a></li> <li 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