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class="share-wechat"><i class="icon icon-wechat"></i><span>微信</span></a> </div> <div class="content-box"> <h1 class="title" id="title">SCIENCE CHINA|面向超高像素密度TFT基Micro-LED全彩显示应用的激光巨量转移技术</h1> <div class="info"> <span style="padding-right:1em">日期：2024-10-28</span> <span id="hits">阅读：380</span> </div> <div class="introduce">核心提示：近日，厦门大学、厦门市未来显示技术研究院和天马微电子组成的联合研发团队在SCIENCE CHINA Information Sciences杂志发表了题为“Super retina TFT based full color microLED display via laser mass transfer”的研究论文。论文深入探讨了面向超高像素密度TFT基Micro-LED全彩显示应用的激光巨量转移集成关键技术问题，并对激光剥离、激光转移修复、面板键合等制程所面临的工艺、装备及材料的挑战进行了系统分析。</div><div id="content"><div class="content" id="article"><p> Micro-LED显示技术是一种将尺寸微缩化的半导体发光二极管（LED）以矩阵形式高密度地集成在一个芯片上的显示技术，是LED芯片与平板显示制造的交叉学科应用技术。相较于LCD与和OLED显示技术，除了产业链成熟度与制造成本，Micro-LED显示技术在亮度、响应速度、功耗、透明度、稳定性等方面具有显著优势，被广泛认为是下一代主流显示技术。如何实现效率、精度、良率兼具的巨量转移集成是学术和产业界共同关注的关键核心问题之一。在百舸争流的众多转移技术中，激光巨量转移技术逐步脱颖而出，承载着Micro-LED产业化征程的期盼。</p> <p>近日，厦门大学、厦门市未来显示技术研究院和天马微电子组成的联合研发团队在SCIENCE CHINA Information Sciences杂志发表了题为“Super retina TFT ba<em></em>sed full color microLED display via laser mass transfer”的研究论文。论文深入探讨了面向超高像素密度TFT基Micro-LED全彩显示应用的激光巨量转移集成关键技术问题，并对激光剥离、激光转移修复、面板键合等制程所面临的工艺、装备及材料的挑战进行了系统分析。团队创新性提出了提升转移效率与良率的新方法和新技术，在业内首次成功制造出像素密度高达403PPI的超视网膜显示TFT基Micro-LED全彩屏，标志着Micro-LED显示技术的一项重大突破。</p> <p style="text-align: center;"><b><img src="http://www.casmita.com/file/upload/202410/28/101851601.png" width="668" height="301" alt="" /> </b></p> <p><b>研究创新点一：基于激光匀化光斑辐照方案，实现图形化衬底GaN基Micro-LED芯片的高质量衬底剥离。</b></p> <p>当前，采用266 nm波长的半导体泵浦固体激光（DPSS激光）对图形化衬底（PSS）GaN基Micro-LED进行激光剥离（LLO）时，存在工艺窗口小，芯片易出现断裂、边缘破损等问题。针对这一问题，团队使用光子追踪法模拟了PSS和GaN界面的能量分布，进而提出激光匀化光斑辐照方案，实现图形化衬底GaN基Micro-LED芯片的高质量衬底剥离，良率超过99%。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202410/28/101859841.jpg" width="668" height="343" alt="" /></p> <p style="text-align: center;">图2 Micro-LED FCoC芯片的光学显微镜下图像：（a）蓝光，（b）绿光和（c）红光；放大后的Micro-LED芯片共聚焦激光扫描显微镜图像：（d）蓝光，（e）绿光和（f）红光 </p> <p><b>研究创新点二：提出了激光巨量转移多因子关联决策方案，通过对转移材料物理特性、激光辐照能量、芯片辐照损伤等因子综合评价，显著提升激光巨量转移的效率、精度与良率。</b></p> <p>针对超高像素密度Micro-LED全彩显示屏对芯片激光巨量转移定位精度与良率的严苛要求，团队提出一种激光巨量转移过程的多因子关联决策方案，如图3所示。包括：1）基于激光与转移胶相互作用模式，对转移胶类型选择进行综合评判；2）激光能量范围与转移胶厚度关联调控，确保在无损伤情况下实现芯片的高精度、高良率转移；3）采用自动光学检测（AOI）/PL检测定位，对不良芯片进行原位修复。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202410/28/101911121.jpg" width="668" height="206" alt="" /></p> <p style="text-align: center;">图3 激光巨量转移多因子关联决策方案</p> <p>根据上述决策方案，团队对转移材料物理特性、激光辐照能量、芯片辐照损伤等影响因子进行了综合评估与优化，显著提升激光巨量转移的效率、精度与良率，转移效率达36kk/h，其中蓝和绿光芯片一次转移良率达99.87%，红光芯片一次转移良率达99.76%。进一步采用266nm激光进行修复，修复后良率达99.999%。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202410/28/101920861.jpg" width="668" height="352" alt="" /> </p> <p>图4（a）GB-ACoC部分芯片排列的SEM图像（侧视图）；（b）GB-ACoC芯片的光学显微镜图像；（c）与（b）图同视场下芯片PL显微镜图像；（d）R-ACoC部分芯片排列的SEM图像（侧视图）；（e）R-ACoC芯片的光学显微镜图像；（f）与（e）图同视场下芯片PL显微镜图像 </p> <p>基于以上创新技术，团队利用激光巨量转移方法，首次成功制造出分辨率高达403PPI的超视网膜显示TFT基Micro-LED全彩屏。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202410/28/101930321.jpg" width="668" height="558" alt="" /> </p> <p>图5 在完成激光巨量转移集成后，像素密度为403 PPI的Micro-LED显示屏分别以（a）蓝色，（b）绿色和（c）红色画面点亮的照片；（d）完成模组封装后的显示屏，实现了全彩显示效果；插图显示了该显示屏中子像素排列情况 </p> <p>厦门大学与厦门市未来显示技术研究院的杨旭高级工程师与李金钗教授为第一作者，黄凯教授与中国科学院院士张荣教授为通讯作者。该研究得到了国家重点研发计划、福建省自然科学基金、厦门市科技计划等项目的资助。研发团队将持续在Micro-LED材料外延、器件开发与转移集成等领域开展技术深耕，加强产学研深度融合，促进行业快速发展。 </p> <p>原文链接：https://l<em></em>ink.springer.com/article/10.1007/s11432-024-4111-9</p> <p>来源：<a>未来显示技术研究院</a></p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=16979');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=16979"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script 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