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Bode Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3DVLSI Circuits

<?xml version="1.0" encoding="UTF-8"?> <article key="pdf/8373" mdate="2011-05-24 00:00:00"> <author>Saeed H. Nasiri and Rahim Faez and Bita Davoodi and Maryam Farrokhi</author> <title>Bode Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3DVLSI Circuits</title> <pages>663 - 666</pages> <year>2011</year> <volume>5</volume> <number>5</number> <journal>International Journal of Electronics and Communication Engineering</journal> <ee>https://publications.waset.org/pdf/8373</ee> <url>https://publications.waset.org/vol/53</url> <publisher>World Academy of Science, Engineering and Technology</publisher> <abstract>Bode stability analysis based on transmission line modeling (TLM) for single wall carbon nanotube (SWCNT) interconnects used in 3DVLSI circuits is investigated for the first time. In this analysis, the dependence of the degree of relative stability for SWCNT interconnects on the geometry of each tube has been acquired. It is shown that, increasing the length and diameter of each tube, SWCNT interconnects become more stable.</abstract> <index>Open Science Index 53, 2011</index> </article>