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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="spin hall current"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 9374</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: spin hall current</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9374</span> Field-Free Orbital Hall Current-Induced Deterministic Switching in the MO/Co₇₁Gd₂₉/Ru Structure</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zelalem%20Abebe%20Bekele">Zelalem Abebe Bekele</a>, <a href="https://publications.waset.org/abstracts/search?q=Kun%20Lei"> Kun Lei</a>, <a href="https://publications.waset.org/abstracts/search?q=Xiukai%20Lan"> Xiukai Lan</a>, <a href="https://publications.waset.org/abstracts/search?q=Xiangyu%20Liu"> Xiangyu Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=Hui%20Wen"> Hui Wen</a>, <a href="https://publications.waset.org/abstracts/search?q=Kaiyou%20Wang"> Kaiyou Wang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Spin-polarized currents offer an efficient means of manipulating the magnetization of a ferromagnetic layer for big data and neuromorphic computing. Research has shown that the orbital Hall effect (OHE) can produce orbital currents, potentially surpassing the counter spin currents induced by the spin Hall effect. However, it’s essential to note that orbital currents alone cannot exert torque directly on a ferromagnetic layer, necessitating a conversion process from orbital to spin currents. Here, we present an efficient method for achieving perpendicularly magnetized spin-orbit torque (SOT) switching by harnessing the localized orbital Hall current generated from a Mo layer within a Mo/CoGd device. Our investigation reveals a remarkable enhancement in the interface-induced planar Hall effect (PHE) within the Mo/CoGd bilayer, resulting in the generation of a z-polarized planar current for manipulating the magnetization of CoGd layer without the need for an in-plane magnetic field. Furthermore, the Mo layer induces out-of-plane orbital current, boosting the in-plane and out-of-plane spin polarization by converting the orbital current into spin current within the dual-property CoGd layer. At the optimal Mo layer thickness, a low critical magnetization switching current density of 2.51×10⁶ A cm⁻² is achieved. This breakthrough opens avenues for all-electrical control energy-efficient magnetization switching through orbital current, advancing the field of spin-orbitronics. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=spin-orbit%20torque" title="spin-orbit torque">spin-orbit torque</a>, <a href="https://publications.waset.org/abstracts/search?q=orbital%20hall%20effect" title=" orbital hall effect"> orbital hall effect</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20hall%20current" title=" spin hall current"> spin hall current</a>, <a href="https://publications.waset.org/abstracts/search?q=orbital%20hall%20current" title=" orbital hall current"> orbital hall current</a>, <a href="https://publications.waset.org/abstracts/search?q=interface-generated%20planar%20hall%20current" title=" interface-generated planar hall current"> interface-generated planar hall current</a>, <a href="https://publications.waset.org/abstracts/search?q=anisotropic%20magnetoresistance" title=" anisotropic magnetoresistance"> anisotropic magnetoresistance</a> </p> <a href="https://publications.waset.org/abstracts/182198/field-free-orbital-hall-current-induced-deterministic-switching-in-the-moco71gd29ru-structure" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/182198.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">55</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9373</span> Two-Dimensional Van-Der Waals Heterostructure for Highly Energy-Efficient Field-Free Deterministic Spin-Orbit Torque Switching at Room Temperature</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Pradeep%20Raj%20Sharma">Pradeep Raj Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Bogeun%20Jang"> Bogeun Jang</a>, <a href="https://publications.waset.org/abstracts/search?q=Jongill%20Hong"> Jongill Hong</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Spin-orbit torque (SOT) is an efficient approach for manipulating the magnetization of ferromagnetic materials (FMs), providing improved device performance, better compatibility, and ultra-fast switching with lower power consumption compared to spin-transfer torque (STT). Among the various materials and structural designs, two-dimensional (2D) van-der Waals (vdW) layered materials and their heterostructures have been demonstrated as highly scalable and promising device architecture for SOT. In particular, a bilayer heterostructure consisting of fully 2D-vdW-FM, non-magnetic material (NM) offers a potential platform for controlling the magnetization using SOT because of the advantages of being easy to scale and less energy to switch. Here, we report filed-free deterministic switching driven by SOT at room temperature, integrating perpendicularly magnetized 2D-vdW material Fe₃GaTe₂ (FGaT) and NM WTe₂. Pulse current-induced magnetization switching with an ultra-low current density of about 6.5×10⁵ A/cm², yielding a SOT efficiency close to double-digits at 300 K, is reported. These values are two orders of magnitude higher than those observed in conventional heavy metal (HM) based SOT and exceed those reported with 2D-vdW layered materials. WTe₂, a topological semimetal possessing strong SOC and high spin Hall angle, can induce significant spin accumulation with negligible spin loss across the transparent 2D bilayer heterointerface. This promising device architecture enables highly compatible, energy-efficient, non-volatile memory and lays the foundation for designing efficient, flexible, and miniaturized spintronic devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=spintronics" title="spintronics">spintronics</a>, <a href="https://publications.waset.org/abstracts/search?q=spin-orbit%20torque" title=" spin-orbit torque"> spin-orbit torque</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20Hall%20effect" title=" spin Hall effect"> spin Hall effect</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20Hall%20angle" title=" spin Hall angle"> spin Hall angle</a>, <a href="https://publications.waset.org/abstracts/search?q=topological%20semimetal" title=" topological semimetal"> topological semimetal</a>, <a href="https://publications.waset.org/abstracts/search?q=perpendicular%20magnetic%20anisotropy" title=" perpendicular magnetic anisotropy"> perpendicular magnetic anisotropy</a> </p> <a href="https://publications.waset.org/abstracts/194481/two-dimensional-van-der-waals-heterostructure-for-highly-energy-efficient-field-free-deterministic-spin-orbit-torque-switching-at-room-temperature" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/194481.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">5</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9372</span> Exploring Spin Reorientation Transition and Berry Curvature Driven Anomalous Hall Effect in Quasi-2D vdW Ferromagnet Fe4GeTe2</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Satyabrata%20Bera">Satyabrata Bera</a>, <a href="https://publications.waset.org/abstracts/search?q=Mintu%20Mondal"> Mintu Mondal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Two-dimensional (2D) ferromagnetic materials have garnered significant attention due to their potential to host intriguing scientific phenomena such as the anomalous Hall effect, anomalous Nernst effect, and high transport spin polarization. This study focuses on the investigation of air-stable van der Waals(vdW) ferromagnets, FeGeTe₂ (FₙGT with n = 3, 4, and 5). Particular emphasis is placed on the Fe4GeTe2 (F4GT) compound, which exhibits a complex and fascinating magnetic behavior characterized by two distinct transitions: (i) paramagnetic (PM) to ferromagnetic (FM) around T C ∼ 270 K, and (ii) another spins reorientation transition (SRT) at T SRT ∼ 100 K . Scaling analysis of magnetocaloric effect confirms the second-order character of the ferromagnetic transition, while the same analysis at T SRT suggests that SRT is first-order phase transition. Moreover, the F4GT exhibits a large anomalous Hall conductivity (AHC), ∼ 490 S/cm at 2 K . The near-quadratic behavior of the anomalous Hall resistivity with the longitudinal resistivity suggests that a dominant AHC contribution arises from an intrinsic Berry curvature (BC) mechanism. Electronic structure calculations reveal a significant BC resulting from SOC-induced gapped nodal lines around the Fermi level, thereby giving rise to large AHC. Additionally, we reported exceptionally large anomalous Hall angle (≃ 10.6%) and Hall factor (≃ 0.22 V −1 ) values, the largest observed within this vdW family. The findings presented here, provide valuable insights into the fascinating magnetic and transport properties of 2D ferromagnetic materials, in particular, FₙGT family. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=2D%20vdW%20ferromagnet" title="2D vdW ferromagnet">2D vdW ferromagnet</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20reorientation%20transition" title=" spin reorientation transition"> spin reorientation transition</a>, <a href="https://publications.waset.org/abstracts/search?q=anomalous%20hall%20effect" title=" anomalous hall effect"> anomalous hall effect</a>, <a href="https://publications.waset.org/abstracts/search?q=berry%20curvature" title=" berry curvature"> berry curvature</a> </p> <a href="https://publications.waset.org/abstracts/178827/exploring-spin-reorientation-transition-and-berry-curvature-driven-anomalous-hall-effect-in-quasi-2d-vdw-ferromagnet-fe4gete2" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/178827.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">86</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9371</span> Power Reduction of Hall-Effect Sensor by Pulse Width Modulation of Spinning-Current</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hyungil%20Chae">Hyungil Chae</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work presents a method to reduce spinning current of a Hall-effect sensor for low-power magnetic sensor applications. Spinning current of a Hall-effect sensor changes the direction of bias current periodically and can separate signals from DC-offset. The bias current is proportional to the sensor sensitivity but also increases the power consumption. To achieve both high sensitivity and low power consumption, the bias current can be pulse-width modulated. When the bias current duration Tb is reduced by a factor of N compared to the spinning current period of Tₛ/2, the total power consumption can be saved by N times. N can be large as long as the Hall-effect sensor settles down within Tb. The proposed scheme is implemented and simulated in a 0.18um CMOS process, and the power saving factor is 9.6 when N is 10. Acknowledgements: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (20160001360022003, Development of Hall Semi-conductor for Smart Car and Device). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chopper%20stabilization" title="chopper stabilization">chopper stabilization</a>, <a href="https://publications.waset.org/abstracts/search?q=Hall-effect%20sensor" title=" Hall-effect sensor"> Hall-effect sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=pulse%20width%20modulation" title=" pulse width modulation"> pulse width modulation</a>, <a href="https://publications.waset.org/abstracts/search?q=spinning%20current" title=" spinning current"> spinning current</a> </p> <a href="https://publications.waset.org/abstracts/83742/power-reduction-of-hall-effect-sensor-by-pulse-width-modulation-of-spinning-current" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/83742.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">484</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9370</span> Path-Spin to Spin-Spin Hybrid Quantum Entanglement: A Conversion Protocol</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Indranil%20Bayal">Indranil Bayal</a>, <a href="https://publications.waset.org/abstracts/search?q=Pradipta%20Panchadhyayee"> Pradipta Panchadhyayee</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Path-spin hybrid entanglement generated and confined in a single spin-1/2 particle is converted to spin-spin hybrid interparticle entanglement, which finds its important applications in quantum information processing. This protocol uses beam splitter, spin flipper, spin measurement, classical channel, unitary transformations, etc., and requires no collective operation on the pair of particles whose spin variables share complete entanglement after the accomplishment of the protocol. The specialty of the protocol lies in the fact that the path-spin entanglement is transferred between spin degrees of freedom of two separate particles initially possessed by a single party. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=entanglement" title="entanglement">entanglement</a>, <a href="https://publications.waset.org/abstracts/search?q=path-spin%20entanglement" title=" path-spin entanglement"> path-spin entanglement</a>, <a href="https://publications.waset.org/abstracts/search?q=spin-spin%20entanglement" title=" spin-spin entanglement"> spin-spin entanglement</a>, <a href="https://publications.waset.org/abstracts/search?q=CNOT%20operation" title=" CNOT operation"> CNOT operation</a> </p> <a href="https://publications.waset.org/abstracts/142538/path-spin-to-spin-spin-hybrid-quantum-entanglement-a-conversion-protocol" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/142538.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">198</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9369</span> Magnetic versus Non-Magnetic Adatoms in Graphene Nanoribbons: Tuning of Spintronic Applications and the Quantum Spin Hall Phase</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Saurabh%20Basu">Saurabh Basu</a>, <a href="https://publications.waset.org/abstracts/search?q=Sudin%20Ganguly"> Sudin Ganguly</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Conductance in graphene nanoribbons (GNR) in presence of magnetic (for example, Iron) and non-magnetic (for example, Gold) adatoms are explored theoretically within a Kane-Mele model for their possible spintronic applications and topologically non-trivial properties. In our work, we have considered the magnetic adatoms to induce a Rashba spin-orbit coupling (RSOC) and an exchange bias field, while the non-magnetic ones induce an RSOC and an intrinsic spin-orbit (SO) coupling. Even though RSOC is present in both, they, however, represent very different physical situations, where the magnetic adatoms do not preserve the time reversal symmetry, while the non-magnetic case does. This has important implications on the topological properties. For example, the non-magnetic adatoms, for moderately strong values of SO, the GNR denotes a quantum spin Hall insulator as evident from a 2e²/h plateau in the longitudinal conductance and presence of distinct conducting edge states with an insulating bulk. Since the edge states are protected by time reversal symmetry, the magnetic adatoms in GNR yield trivial insulators and do not possess any non-trivial topological property. However, they have greater utility than the non-magnetic adatoms from the point of view of spintronic applications. Owing to the broken spatial symmetry induced by the presence of adatoms of either type, all the x, y and z components of the spin-polarized conductance become non-zero (only the y-component survives in pristine Graphene owing to a mirror symmetry present there) and hence become suitable for spintronic applications. However, the values of the spin polarized conductances are at least two orders of magnitude larger in the case of magnetic adatoms than their non-magnetic counterpart, thereby ensuring more efficient spintronic applications. Further the applications are tunable by altering the adatom densities. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=magnetic%20and%20non-magnetic%20adatoms" title="magnetic and non-magnetic adatoms">magnetic and non-magnetic adatoms</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20spin%20hall%20phase" title=" quantum spin hall phase"> quantum spin hall phase</a>, <a href="https://publications.waset.org/abstracts/search?q=spintronic%20applications" title=" spintronic applications"> spintronic applications</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20polarized%20conductance" title=" spin polarized conductance"> spin polarized conductance</a>, <a href="https://publications.waset.org/abstracts/search?q=time%20reversal%20symmetry" title=" time reversal symmetry"> time reversal symmetry</a> </p> <a href="https://publications.waset.org/abstracts/76194/magnetic-versus-non-magnetic-adatoms-in-graphene-nanoribbons-tuning-of-spintronic-applications-and-the-quantum-spin-hall-phase" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/76194.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">302</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9368</span> Analysis of Vertical Hall Effect Device Using Current-Mode</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kim%20Jin%20Sup">Kim Jin Sup</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a vertical hall effect device using current-mode. Among different geometries that have been studied and simulated using COMSOL Multiphysics, optimized cross-shaped model displayed the best sensitivity. The cross-shaped model emerged as the optimum plate to fit the lowest noise and residual offset and the best sensitivity. The symmetrical cross-shaped hall plate is widely used because of its high sensitivity and immunity to alignment tolerances resulting from the fabrication process. The hall effect device has been designed using a 0.18-μm CMOS technology. The simulation uses the nominal bias current of 12μA. The applied magnetic field is from 0 mT to 20 mT. Simulation results achieved in COMSOL and validated with respect to the electrical behavior of equivalent circuit for Cadence. Simulation results of the one structure over the 13 available samples shows for the best geometry a current-mode sensitivity of 6.6 %/T at 20mT. Acknowledgment: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (No. R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=vertical%20hall%20device" title="vertical hall device">vertical hall device</a>, <a href="https://publications.waset.org/abstracts/search?q=current-mode" title=" current-mode"> current-mode</a>, <a href="https://publications.waset.org/abstracts/search?q=crossed-shaped%20model" title=" crossed-shaped model"> crossed-shaped model</a>, <a href="https://publications.waset.org/abstracts/search?q=CMOS%20technology" title=" CMOS technology"> CMOS technology</a> </p> <a href="https://publications.waset.org/abstracts/59413/analysis-of-vertical-hall-effect-device-using-current-mode" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/59413.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">292</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9367</span> Metal Layer Based Vertical Hall Device in a Complementary Metal Oxide Semiconductor Process</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Se-Mi%20Lim">Se-Mi Lim</a>, <a href="https://publications.waset.org/abstracts/search?q=Won-Jae%20Jung"> Won-Jae Jung</a>, <a href="https://publications.waset.org/abstracts/search?q=Jin-Sup%20Kim"> Jin-Sup Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Jun-Seok%20Park"> Jun-Seok Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyung-Il%20Chae"> Hyung-Il Chae</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a current-mode vertical hall device (VHD) structure using metal layers in a CMOS process. The proposed metal layer based vertical hall device (MLVHD) utilizes vertical connection among metal layers (from M1 to the top metal) to facilitate hall effect. The vertical metal structure unit flows a bias current Ibias from top to bottom, and an external magnetic field changes the current distribution by Lorentz force. The asymmetric current distribution can be detected by two differential-mode current outputs on each side at the bottom (M1), and each output sinks Ibias/2 ± Ihall. A single vertical metal structure generates only a small amount of hall effect of Ihall due to the short length from M1 to the top metal as well as the low conductivity of the metal, and a series connection between thousands of vertical structure units can solve the problem by providing NxIhall. The series connection between two units is another vertical metal structure flowing current in the opposite direction, and generates negative hall effect. To mitigate the negative hall effect from the series connection, the differential current outputs at the bottom (M1) from one unit merges on the top metal level of the other unit. The proposed MLVHD is simulated in a 3-dimensional model simulator in COMSOL Multiphysics, with 0.35 μm CMOS process parameters. The simulated MLVHD unit size is (W) 10 μm × (L) 6 μm × (D) 10 μm. In this paper, we use an MLVHD with 10 units; the overall hall device size is (W) 10 μm × (L)78 μm × (D) 10 μm. The COMSOL simulation result is as following: the maximum hall current is approximately 2 μA with a 12 μA bias current and 100mT magnetic field; This work was supported by Institute for Information & communications Technology Promotion(IITP) grant funded by the Korea government(MSIP) (No.R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CMOS" title="CMOS">CMOS</a>, <a href="https://publications.waset.org/abstracts/search?q=vertical%20hall%20device" title=" vertical hall device"> vertical hall device</a>, <a href="https://publications.waset.org/abstracts/search?q=current%20mode" title=" current mode"> current mode</a>, <a href="https://publications.waset.org/abstracts/search?q=COMSOL" title=" COMSOL"> COMSOL</a> </p> <a href="https://publications.waset.org/abstracts/60363/metal-layer-based-vertical-hall-device-in-a-complementary-metal-oxide-semiconductor-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/60363.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">303</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9366</span> Behavior of Current in a Semiconductor Nanostructure under Influence of Embedded Quantum Dots</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=H.%20Paredes%20Guti%C3%A9rrez">H. Paredes Gutiérrez</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20T.%20P%C3%A9rez-Merchancano"> S. T. Pérez-Merchancano</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20semiconductors" title="quantum semiconductors">quantum semiconductors</a>, <a href="https://publications.waset.org/abstracts/search?q=nanostructures" title=" nanostructures"> nanostructures</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20dots" title=" quantum dots"> quantum dots</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20polarization" title=" spin polarization"> spin polarization</a> </p> <a href="https://publications.waset.org/abstracts/49796/behavior-of-current-in-a-semiconductor-nanostructure-under-influence-of-embedded-quantum-dots" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/49796.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">273</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9365</span> A CMOS-Integrated Hall Plate with High Sensitivity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jin%20Sup%20Kim">Jin Sup Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Min%20Seo"> Min Seo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> An improved cross-shaped hall plate with high sensitivity is described in this paper. Among different geometries that have been simulated and measured using Helmholtz coil. The paper describes the physical hall plate design and implementation in a 0.18-µm CMOS technology. In this paper, the biasing is a constant voltage mode. In the voltage mode, magnetic field is converted into an output voltage. The output voltage is typically in the order of micro- to millivolt and therefore, it must be amplified before being transmitted to the outside world. The study, design and performance optimization of hall plate has been carried out with the COMSOL Multiphysics. It is used to estimate the voltage distribution in the hall plate with and without magnetic field and to optimize the geometry. The simulation uses the nominal bias current of 1mA. The applied magnetic field is in the range from 0 mT to 20 mT. Measured results of the one structure over the 10 available samples show for the best sensitivity of 2.5 %/T at 20mT. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cross-shaped%20hall%20plate" title="cross-shaped hall plate">cross-shaped hall plate</a>, <a href="https://publications.waset.org/abstracts/search?q=sensitivity" title=" sensitivity"> sensitivity</a>, <a href="https://publications.waset.org/abstracts/search?q=CMOS%20technology" title=" CMOS technology"> CMOS technology</a>, <a href="https://publications.waset.org/abstracts/search?q=Helmholtz%20coil" title=" Helmholtz coil"> Helmholtz coil</a> </p> <a href="https://publications.waset.org/abstracts/79041/a-cmos-integrated-hall-plate-with-high-sensitivity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/79041.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">197</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9364</span> A Spin and Valley Modulating Device in Grapheme heterostructure: Controlling Valley and Spin Current</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Adel%20Belayadi">Adel Belayadi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The investigation of two-dimensional (2D) heterostructures, whether in the presence or the absence of magnetic substrates that sustain several induced spin-orbit couplings, has shown a promising/essential application for advancing the emerging fields of spintronics and valleytronics. In this contribution, we study spin/valley transport in graphene-like substrates in the presence of one or several locally induced spin-orbit coupling (SOC) terms resulting from graphene-based heterostructures. The models we proposed are based on the tight-binding approach, and our findings imply an alternative approach for conducting valley-polarized currents and suggest a corresponding mechanism for valley-dependent electron optics and optoelectronic devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=graphene-heterostructures" title="graphene-heterostructures">graphene-heterostructures</a>, <a href="https://publications.waset.org/abstracts/search?q=tight%20binding%20pproch" title=" tight binding pproch"> tight binding pproch</a>, <a href="https://publications.waset.org/abstracts/search?q=Spintronics" title=" Spintronics"> Spintronics</a>, <a href="https://publications.waset.org/abstracts/search?q=Valleytronics" title=" Valleytronics"> Valleytronics</a> </p> <a href="https://publications.waset.org/abstracts/192032/a-spin-and-valley-modulating-device-in-grapheme-heterostructure-controlling-valley-and-spin-current" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/192032.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">25</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9363</span> Development of a Very High Sensitivity Magnetic Field Sensor Based on Planar Hall Effect</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Arnab%20Roy">Arnab Roy</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20S.%20Anil%20Kumar"> P. S. Anil Kumar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Hall bar magnetic field sensors based on planar hall effect were fabricated from permalloy (Ni¬80Fe20) thin films grown by pulsed laser ablation. As large as 400% planar Hall voltage change was observed for a magnetic field sweep within ±4 Oe, a value comparable with present day TMR sensors at room temperature. A very large planar Hall sensitivity of 1200 Ω/T was measured close to switching fields, which was not obtained so far apart from 2DEG Hall sensors. In summary, a highly sensitive low magnetic field sensor has been constructed which has the added advantage of simple architecture, good signal to noise ratio and robustness. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=planar%20hall%20effect" title="planar hall effect">planar hall effect</a>, <a href="https://publications.waset.org/abstracts/search?q=permalloy" title=" permalloy"> permalloy</a>, <a href="https://publications.waset.org/abstracts/search?q=NiFe" title=" NiFe"> NiFe</a>, <a href="https://publications.waset.org/abstracts/search?q=pulsed%20laser%20ablation" title=" pulsed laser ablation"> pulsed laser ablation</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20magnetic%20field%20sensor" title=" low magnetic field sensor"> low magnetic field sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20sensitivity%20magnetic%20field%20sensor" title=" high sensitivity magnetic field sensor"> high sensitivity magnetic field sensor</a> </p> <a href="https://publications.waset.org/abstracts/17435/development-of-a-very-high-sensitivity-magnetic-field-sensor-based-on-planar-hall-effect" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/17435.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">515</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9362</span> Spin Resolved Electronic Behavior of Zno Nanoribbons </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Serkan%20Caliskan">Serkan Caliskan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The aim of this study is to understand the spin-resolved properties of ZnO armchair and zigzag nanoribbons. The spin polarization can be induced by either geometry of the nanoribbons or ferromagnetic electrodes. Hence, spin-dependent behavior is revealed in these nanostructures in the absence of external magnetic field. Both electronic structure and magnetic properties of the nanoribbons are analyzed, employing first-principles calculations through Density Functional Theory. The relevant properties using the spin-dependent band structure, conductance, transmission, density of states and magnetic moment are elucidated. These results can be utilized to describe the nanoscale structures and stimulate the experimental works. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=first%20principles" title="first principles">first principles</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20polarized%20transport" title=" spin polarized transport"> spin polarized transport</a>, <a href="https://publications.waset.org/abstracts/search?q=ZnO%20device" title=" ZnO device"> ZnO device</a>, <a href="https://publications.waset.org/abstracts/search?q=ZnO%20nanoribbons" title=" ZnO nanoribbons"> ZnO nanoribbons</a> </p> <a href="https://publications.waset.org/abstracts/82373/spin-resolved-electronic-behavior-of-zno-nanoribbons" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/82373.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">194</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9361</span> Experimental Investigation of Performance Anode Side of PEM Fuel Cell with Spin Method Coated with YSZ+SDC</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=G%C3%BCrol%20%C3%96nal">Gürol Önal</a>, <a href="https://publications.waset.org/abstracts/search?q=Kevser%20Din%C3%A7er"> Kevser Dinçer</a>, <a href="https://publications.waset.org/abstracts/search?q=Salih%20Yayla"> Salih Yayla</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, performance of proton exchange membrane PEM fuel cell was experimentally investigated. Coating on the anode side of the PEM fuel cell was accomplished with the spin method by using YSZ+SDC. A solution having 0,1 gr YttriaStabilized Zirconia (YSZ) + 0,1 Samarium-Doped Ceria (SDC) + 10 mL methanol was prepared. This solution was taken out and filled into a micro-pipette. Then the anode side of PEM fuel cell was coated with YSZ+ SDC by using spin method. In the experimental study, current, voltage and power performances before and after coating were recorded and then compared to each other. It was found that the efficiency of PEM fuel cell increases after the coating with YSZ+SDC. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=fuel%20cell" title="fuel cell">fuel cell</a>, <a href="https://publications.waset.org/abstracts/search?q=Polymer%20Electrolyte%20Membrane%20%28PEM%29" title=" Polymer Electrolyte Membrane (PEM)"> Polymer Electrolyte Membrane (PEM)</a>, <a href="https://publications.waset.org/abstracts/search?q=membrane" title=" membrane"> membrane</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20method" title=" spin method"> spin method</a> </p> <a href="https://publications.waset.org/abstracts/8063/experimental-investigation-of-performance-anode-side-of-pem-fuel-cell-with-spin-method-coated-with-yszsdc" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8063.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">562</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9360</span> Spin-Dependent Transport Signatures of Bound States: From Finger to Top Gates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yun-Hsuan%20Yu">Yun-Hsuan Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=Chi-Shung%20Tang"> Chi-Shung Tang</a>, <a href="https://publications.waset.org/abstracts/search?q=Nzar%20Rauf%20Abdullah"> Nzar Rauf Abdullah</a>, <a href="https://publications.waset.org/abstracts/search?q=Vidar%20Gudmundsson"> Vidar Gudmundsson</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Spin-orbit gap feature in energy dispersion of one-dimensional devices is revealed via strong spin-orbit interaction (SOI) effects under Zeeman field. We describe the utilization of a finger-gate or a top-gate to control the spin-dependent transport characteristics in the SOI-Zeeman influenced split-gate devices by means of a generalized spin-mixed propagation matrix method. For the finger-gate system, we find a bound state in continuum for incident electrons within the ultra-low energy regime. For the top-gate system, we observe more bound-state features in conductance associated with the formation of spin-associated hole-like or electron-like quasi-bound states around band thresholds, as well as hole bound states around the reverse point of the energy dispersion. We demonstrate that the spin-dependent transport behavior of a top-gate system is similar to that of a finger-gate system only if the top-gate length is less than the effective Fermi wavelength. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=spin-orbit" title="spin-orbit">spin-orbit</a>, <a href="https://publications.waset.org/abstracts/search?q=zeeman" title=" zeeman"> zeeman</a>, <a href="https://publications.waset.org/abstracts/search?q=top-gate" title=" top-gate"> top-gate</a>, <a href="https://publications.waset.org/abstracts/search?q=finger-gate" title=" finger-gate"> finger-gate</a>, <a href="https://publications.waset.org/abstracts/search?q=bound%20state" title=" bound state"> bound state</a> </p> <a href="https://publications.waset.org/abstracts/82686/spin-dependent-transport-signatures-of-bound-states-from-finger-to-top-gates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/82686.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">269</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9359</span> Electron Spin Resonance of Conduction and Spin Waves Dynamics Investigations in Bi-2223 Superconductor for Decoding Pairing Mechanism</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=S.%20N.%20Ekbote">S. N. Ekbote</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20K.%20Padam"> G. K. Padam</a>, <a href="https://publications.waset.org/abstracts/search?q=Manju%20Arora"> Manju Arora</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Electron spin resonance (ESR) spectroscopic investigations of (Bi, Pb)₂Sr₂Ca₂Cu₃O₁₀₋ₓ (Bi-2223) bulk samples were carried out in both the normal and superconducting states. A broad asymmetric resonance signal with side signals is obtained in the normal state, and all of them disappear in the superconducting state. The temperature and angular orientation effects on these signals suggest that the broad asymmetric signal arises from electron spin resonance of conduction electrons (CESR) and the side signals from exchange interactions as Platzman-Wolff type spin waves. The disappearance of CESR and spin waves in a superconducting state demonstrates the role of exchange interactions in Cooper pair formation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bi-2223%20superconductor" title="Bi-2223 superconductor">Bi-2223 superconductor</a>, <a href="https://publications.waset.org/abstracts/search?q=CESR" title=" CESR"> CESR</a>, <a href="https://publications.waset.org/abstracts/search?q=ESR" title=" ESR"> ESR</a>, <a href="https://publications.waset.org/abstracts/search?q=exchange%20interactions" title=" exchange interactions"> exchange interactions</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20waves" title=" spin waves"> spin waves</a> </p> <a href="https://publications.waset.org/abstracts/157103/electron-spin-resonance-of-conduction-and-spin-waves-dynamics-investigations-in-bi-2223-superconductor-for-decoding-pairing-mechanism" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/157103.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">131</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9358</span> Coexistence of Superconductivity and Spin Density Wave in Ferropnictide Ba₁₋ₓKₓFe₂As₂</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Tadesse%20Desta%20Gidey">Tadesse Desta Gidey</a>, <a href="https://publications.waset.org/abstracts/search?q=Gebregziabher%20Kahsay"> Gebregziabher Kahsay</a>, <a href="https://publications.waset.org/abstracts/search?q=Pooran%20Singh"> Pooran Singh </a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work focuses on the theoretical investigation of the coexistence of superconductivity and Spin Density Wave (SDW)in Ferropnictide Ba₁₋ₓKₓFe₂As₂. By developing a model Hamiltonian for the system and by using quantum field theory Green’s function formalism, we have obtained mathematical expressions for superconducting transition temperature TC), spin density wave transition temperature (Tsdw), superconductivity order parameter (Sc), and spin density wave order parameter (sdw). By employing the experimental and theoretical values of the parameters in the obtained expressions, phase diagrams of superconducting transition temperature (TC) versus superconducting order parameter (Sc) and spin density wave transition temperature (Tsdw), versus spin density wave order parameter (sdw) have been plotted. By combining the two phase diagrams, we have demonstrated the possible coexistence of superconductivity and spin density wave (SDW) in ferropnictide Ba1−xKxFe2As2. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Superconductivity" title="Superconductivity">Superconductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=Spin%20density%20wave" title=" Spin density wave"> Spin density wave</a>, <a href="https://publications.waset.org/abstracts/search?q=Coexistence" title=" Coexistence"> Coexistence</a>, <a href="https://publications.waset.org/abstracts/search?q=Green%20function" title=" Green function"> Green function</a>, <a href="https://publications.waset.org/abstracts/search?q=Pnictides" title=" Pnictides"> Pnictides</a>, <a href="https://publications.waset.org/abstracts/search?q=Ba%E2%82%81%E2%82%8B%E2%82%93K%E2%82%93Fe%E2%82%82As%E2%82%82" title=" Ba₁₋ₓKₓFe₂As₂"> Ba₁₋ₓKₓFe₂As₂</a> </p> <a href="https://publications.waset.org/abstracts/119138/coexistence-of-superconductivity-and-spin-density-wave-in-ferropnictide-ba1kfe2as2" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/119138.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">173</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9357</span> Lookup Table Reduction and Its Error Analysis of Hall Sensor-Based Rotation Angle Measurement</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Young-San%20Shin">Young-San Shin</a>, <a href="https://publications.waset.org/abstracts/search?q=Seongsoo%20Lee"> Seongsoo Lee</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Hall sensor is widely used to measure rotation angle. When the Hall voltage is measured for linear displacement, it is converted to angular displacement using arctangent function, which requires a large lookup table. In this paper, a lookup table reduction technique is presented for angle measurement. When the input of the lookup table is small within a certain threshold, the change of the outputs with respect to the change of the inputs is relatively small. Thus, several inputs can share same output, which significantly reduce the lookup table size. Its error analysis was also performed, and the threshold was determined so as to maintain the error less than 1°. When the Hall voltage has 11-bit resolution, the lookup table size is reduced from 1,024 samples to 279 samples. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=hall%20sensor" title="hall sensor">hall sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=angle%20measurement" title=" angle measurement"> angle measurement</a>, <a href="https://publications.waset.org/abstracts/search?q=lookup%20table" title=" lookup table"> lookup table</a>, <a href="https://publications.waset.org/abstracts/search?q=arctangent" title=" arctangent"> arctangent</a> </p> <a href="https://publications.waset.org/abstracts/60862/lookup-table-reduction-and-its-error-analysis-of-hall-sensor-based-rotation-angle-measurement" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/60862.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">337</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9356</span> Electrical Transport in Bi₁Sb₁Te₁.₅Se₁.₅ /α-RuCl₃ Heterostructure Nanodevices</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shoubhik%20Mandal">Shoubhik Mandal</a>, <a href="https://publications.waset.org/abstracts/search?q=Debarghya%20Mallick"> Debarghya Mallick</a>, <a href="https://publications.waset.org/abstracts/search?q=Abhishek%20Banerjee"> Abhishek Banerjee</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20Ganesan"> R. Ganesan</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20S.%20Anil%20Kumar"> P. S. Anil Kumar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We report magnetotransport measurements in Bi₁Sb₁Te₁.₅Se₁.₅/RuCl₃ heterostructure nanodevices. Bi₁Sb₁Te₁.₅Se₁.₅ (BSTS) is a strong three-dimensional topological insulator (3D-TI) that hosts conducting topological surface states (TSS) enclosing an insulating bulk. α-RuCl₃ (namely, RuCl₃) is an anti-ferromagnet that is predicted to behave as a Kitaev-like quantum spin liquid carrying Majorana excitations. Temperature (T)-dependent resistivity measurements show the interplay between parallel bulk and surface transport channels. At T < 150 K, surface state transport dominates over bulk transport. Multi-channel weak anti-localization (WAL) is observed, as a sharp cusp in the magnetoconductivity, indicating strong spin-orbit coupling. The presence of top and bottom topological surface states (TSS), including a pair of electrically coupled Rashba surface states (RSS), are indicated. Non-linear Hall effect, explained by a two-band model, further supports this interpretation. Finally, a low-T logarithmic resistance upturn is analyzed using the Lu-Shen model, supporting the presence of gapless surface states with a π Berry phase. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=topological%20materials" title="topological materials">topological materials</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20transport" title=" electrical transport"> electrical transport</a>, <a href="https://publications.waset.org/abstracts/search?q=Lu-Shen%20model" title=" Lu-Shen model"> Lu-Shen model</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20spin%20liquid" title=" quantum spin liquid"> quantum spin liquid</a> </p> <a href="https://publications.waset.org/abstracts/149012/electrical-transport-in-bi1sb1te15se15-a-rucl3-heterostructure-nanodevices" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/149012.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">121</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9355</span> The Effect of Lande G-Factors on the Quantum and Thermal Entanglement in the Mixed Spin-(1/2,S) Heisenberg Dimer</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=H.%20Vargova">H. Vargova</a>, <a href="https://publications.waset.org/abstracts/search?q=J.%20Strecka"> J. Strecka</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20Tomasovicova"> N. Tomasovicova</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A rigorous analytical treatment, with the help of a concept of negativity, is used to study the quantum and thermal entanglement in an isotropic mixed spin-(1/2,S) Heisenberg dimer. The effect of the spin-S magnitude, as well as the effect of diversity between Landé g-factors of magnetic constituents on system entanglement, is exhaustively analyzed upon the variation of the external magnetic and electric field, respectively. It was identified that the increasing magnitude of the spin-S species in a mixed spin-(1/2,S) Heisenberg dimer with comparative Landé g-factors have always a reduction effect on a degree of the quantum entanglement, but it strikingly shifts the thermal entanglement to the higher temperatures. Surprisingly, out of the limit of identical Landé g-factors, the increasing magnitude of spin-S entities can enhance the system entanglement in both low and high magnetic fields. Besides this, we identify that the analyzed dimer with a high-enough magnitude of the spin-S entities at a sufficiently high magnetic field can exhibit unconventional thermally driven re-entrance between the entangled and unentangled mixed state. The importance of the electric-field stimuli is also discussed in detail. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20and%20thermal%20entantanglement" title="quantum and thermal entantanglement">quantum and thermal entantanglement</a>, <a href="https://publications.waset.org/abstracts/search?q=mixed%20spin%20Heisenberg%20model" title=" mixed spin Heisenberg model"> mixed spin Heisenberg model</a>, <a href="https://publications.waset.org/abstracts/search?q=negativity" title=" negativity"> negativity</a>, <a href="https://publications.waset.org/abstracts/search?q=reentrant%20phase%20transition" title=" reentrant phase transition"> reentrant phase transition</a> </p> <a href="https://publications.waset.org/abstracts/155595/the-effect-of-lande-g-factors-on-the-quantum-and-thermal-entanglement-in-the-mixed-spin-12s-heisenberg-dimer" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/155595.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">99</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9354</span> Magneto-Transport of Single Molecular Transistor Using Anderson-Holstein-Caldeira-Leggett Model </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Manasa%20Kalla">Manasa Kalla</a>, <a href="https://publications.waset.org/abstracts/search?q=Narasimha%20Raju%20Chebrolu"> Narasimha Raju Chebrolu</a>, <a href="https://publications.waset.org/abstracts/search?q=Ashok%20Chatterjee"> Ashok Chatterjee</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We have studied the quantum transport properties of a single molecular transistor in the presence of an external magnetic field using the Keldysh Green function technique. We also used the Anderson-Holstein-Caldeira-Leggett Model to describe the single molecular transistor that consists of a molecular quantum dot (QD) coupled to two metallic leads and placed on a substrate that acts as a heat bath. The phonons are eliminated by the Lang-Firsov transformation and the effective Hamiltonian is used to study the effect of an external magnetic field on the spectral density function, Tunneling Current, Differential Conductance and Spin polarization. A peak in the spectral function corresponds to a possible excitation. In the presence of a magnetic field, the spin-up and spin-down states are degenerate and this degeneracy is lifted by the magnetic field leading to the splitting of the central peak of the spectral function. The tunneling current decreases with increasing magnetic field. We have observed that even the differential conductance peak in the zero magnetic field curve is split in the presence electron-phonon interaction. As the magnetic field is increased, each peak splits into two peaks. And each peak indicates the existence of an energy level. Thus the number of energy levels for transport in the bias window increases with the magnetic field. In the presence of the electron-phonon interaction, Differential Conductance in general gets reduced and decreases faster with the magnetic field. As magnetic field strength increases, the spin polarization of the current is increasing. Our results show that a strongly interacting QD coupled to metallic leads in the presence of external magnetic field parallel to the plane of QD acts as a spin filter at zero temperature. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Anderson-Holstein%20model" title="Anderson-Holstein model">Anderson-Holstein model</a>, <a href="https://publications.waset.org/abstracts/search?q=Caldeira-Leggett%20model" title=" Caldeira-Leggett model"> Caldeira-Leggett model</a>, <a href="https://publications.waset.org/abstracts/search?q=spin-polarization" title=" spin-polarization"> spin-polarization</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20dots" title=" quantum dots"> quantum dots</a> </p> <a href="https://publications.waset.org/abstracts/93952/magneto-transport-of-single-molecular-transistor-using-anderson-holstein-caldeira-leggett-model" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/93952.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">185</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9353</span> The Incubation of University Spin-Offs: An Exploratory Study of a Deep Tech Venture</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jerome%20D.%20Donovan">Jerome D. Donovan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The pandemic has resulted in a dramatic re-consideration of the reliance on international student fees to support university models in Australia. A key resulting initiative for the Australian Federal Government has been shifting the way universities consider their research model, emphasising the importance of commercialising research. This study specifically examines this shift from the perspective of a university spin-off, examining how university support structures and incubation models have assisted in the translation of fundamental research into a high-growth university spin-off. A focused case study approach is adopted in this study, using an auto-ethnographic research method to document the experiences and insights drawn from being a co-founder in a university spin-off in a time where research commercialisation has emerged as a central focus in Australian universities. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=research%20commercialisation" title="research commercialisation">research commercialisation</a>, <a href="https://publications.waset.org/abstracts/search?q=spin-offs" title=" spin-offs"> spin-offs</a>, <a href="https://publications.waset.org/abstracts/search?q=university%20incubation" title=" university incubation"> university incubation</a>, <a href="https://publications.waset.org/abstracts/search?q=entrepreneurship" title=" entrepreneurship"> entrepreneurship</a> </p> <a href="https://publications.waset.org/abstracts/166331/the-incubation-of-university-spin-offs-an-exploratory-study-of-a-deep-tech-venture" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/166331.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">81</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9352</span> Bulk Transport in Strongly Correlated Topological Insulator Samarium Hexaboride Using Hall Effect and Inverted Resistance Methods</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Alexa%20Rakoski">Alexa Rakoski</a>, <a href="https://publications.waset.org/abstracts/search?q=Yun%20Suk%20Eo"> Yun Suk Eo</a>, <a href="https://publications.waset.org/abstracts/search?q=Cagliyan%20Kurdak"> Cagliyan Kurdak</a>, <a href="https://publications.waset.org/abstracts/search?q=Priscila%20F.%20S.%20Rosa"> Priscila F. S. Rosa</a>, <a href="https://publications.waset.org/abstracts/search?q=Zachary%20Fisk"> Zachary Fisk</a>, <a href="https://publications.waset.org/abstracts/search?q=Monica%20Ciomaga%20Hatnean"> Monica Ciomaga Hatnean</a>, <a href="https://publications.waset.org/abstracts/search?q=Geetha%20Balakrishnan"> Geetha Balakrishnan</a>, <a href="https://publications.waset.org/abstracts/search?q=Boyoun%20Kang"> Boyoun Kang</a>, <a href="https://publications.waset.org/abstracts/search?q=Myungsuk%20Song"> Myungsuk Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Byungki%20Cho"> Byungki Cho</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Samarium hexaboride (SmB6) is a strongly correlated mixed valence material and Kondo insulator. In the resistance-temperature curve, SmB6 exhibits activated behavior from 4-40 K after the Kondo gap forms. However, below 4 K, the resistivity is temperature independent or weakly temperature dependent due to the appearance of a topologically protected surface state. Current research suggests that the surface of SmB6 is conductive while the bulk is truly insulating, different from conventional 3D TIs (Topological Insulators) like Bi₂Se₃ which are plagued by bulk conduction due to impurities. To better understand why the bulk of SmB6 is so different from conventional TIs, this study employed a new method, called inverted resistance, to explore the lowest temperatures, as well as standard Hall measurements for the rest of the temperature range. In the inverted resistance method, current flows from an inner contact to an outer ring, and voltage is measured outside of this outer ring. This geometry confines the surface current and allows for measurement of the bulk resistivity even when the conductive surface dominates transport (below 4 K). The results confirm that the bulk of SmB6 is truly insulating down to 2 K. Hall measurements on a number of samples show consistent bulk behavior from 4-40 K, but widely varying behavior among samples above 40 K. This is attributed to a combination of the growth process and purity of the starting material, and the relationship between the high and low temperature behaviors is still being explored. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bulk%20transport" title="bulk transport">bulk transport</a>, <a href="https://publications.waset.org/abstracts/search?q=Hall%20effect" title=" Hall effect"> Hall effect</a>, <a href="https://publications.waset.org/abstracts/search?q=inverted%20resistance" title=" inverted resistance"> inverted resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=Kondo%20insulator" title=" Kondo insulator"> Kondo insulator</a>, <a href="https://publications.waset.org/abstracts/search?q=samarium%20hexaboride" title=" samarium hexaboride"> samarium hexaboride</a>, <a href="https://publications.waset.org/abstracts/search?q=topological%20insulator" title=" topological insulator"> topological insulator</a> </p> <a href="https://publications.waset.org/abstracts/94303/bulk-transport-in-strongly-correlated-topological-insulator-samarium-hexaboride-using-hall-effect-and-inverted-resistance-methods" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/94303.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">160</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9351</span> A Potential Spin-orbit Torque Device Using the Tri-layer Structure</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chih-Wei%20Cheng">Chih-Wei Cheng</a>, <a href="https://publications.waset.org/abstracts/search?q=Wei-Jen%20Chan"> Wei-Jen Chan</a>, <a href="https://publications.waset.org/abstracts/search?q=Yu-Han%20Huang"> Yu-Han Huang</a>, <a href="https://publications.waset.org/abstracts/search?q=Yi-Tsung%20Lin"> Yi-Tsung Lin</a>, <a href="https://publications.waset.org/abstracts/search?q=Yen-Wei%20Huang"> Yen-Wei Huang</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Cheng%20Chen"> Min-Cheng Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Shou-Zen%20Chang"> Shou-Zen Chang</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Chern"> G. Chern</a>, <a href="https://publications.waset.org/abstracts/search?q=Yuan-Chieh%20Tseng"> Yuan-Chieh Tseng</a> </p> <p class="card-text"><strong>Abstract:</strong></p> How to develop spin-orbit-torque (SOT) devices with the virtues of field-free, perpendicular magnetic anisotropy (PMA), and low switching current is one of the many challenges in spintronics today. We propose a CoFeB/Ta/CoFeB tri-layer antiferromagnetic SOT device that could meet the above requirements. The device’s PMA was developed by adopting CoFeB–MgO interface. The key to the success of this structure is to ensure that (i)changes of the inter-layer coupling(IEC) and CoFeB anisotropy can occur simultaneously; (ii) one of the CoFeB needs to have a slightly tilted moment in the beginning. When sufficient current is given, the SHEreverses the already-tiltedCoFeB, and the other CoFeB can be reversed simultaneously by the IEC with the field-free nature. Adjusting the thickness of Ta can modify the coupling state to reduce the switching current while the field-free nature was preserved. Micromagnetic simulation suggests that the Néel orange peel effect (NOPE) is non-negligible due to interface roughness and coupling effect in the presence of perpendicular anisotropy. Fortunately, the Néel field induced by the NOPE appears to favor the field-free reversal. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CoFeB" title="CoFeB">CoFeB</a>, <a href="https://publications.waset.org/abstracts/search?q=spin-orbit%20torque" title=" spin-orbit torque"> spin-orbit torque</a>, <a href="https://publications.waset.org/abstracts/search?q=antiferromagnetic" title=" antiferromagnetic"> antiferromagnetic</a>, <a href="https://publications.waset.org/abstracts/search?q=MRAM" title=" MRAM"> MRAM</a>, <a href="https://publications.waset.org/abstracts/search?q=trilayer" title=" trilayer"> trilayer</a> </p> <a href="https://publications.waset.org/abstracts/158357/a-potential-spin-orbit-torque-device-using-the-tri-layer-structure" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/158357.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">117</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9350</span> In Search of High Growth: Mapping out Academic Spin-Off´s Performance in Catalonia</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=F.%20Guspi">F. Guspi</a>, <a href="https://publications.waset.org/abstracts/search?q=E.%20Garc%C3%ADa"> E. García</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This exploratory study gives an overview of the evolution of the main financial and performance indicators of the Academic Spin-Off’s and High Growth Academic Spin-Off’s in year 3 and year 6 after its creation in the region of Catalonia in Spain. The study compares and evaluates results of these different measures of performance and the degree of success of these companies for each University. We found that the average Catalonian Academic Spin-Off is small and have not achieved the sustainability stage at year 6. On the contrary, a small group of High Growth Academic Spin-Off’s exhibit robust performance with high profits in year 6. Our results support the need to increase selectivity and support for these companies especially near year 3, because are the ones that will bring wealth and employment. University role as an investor has rigid norms and habits that impede an efficient economic return from their ASO investment. Universities with high performance on sales and employment in year 3 not always could sustain this growth in year 6 because their ASO’s are not profitable. On the contrary, profitable ASO exhibit superior performance in all measurement indicators in year 6. We advocate the need of a balanced growth (with profits) as a way to obtain subsequent continuous growth. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Academic%20Spin-Off%20%28ASO%29" title="Academic Spin-Off (ASO)">Academic Spin-Off (ASO)</a>, <a href="https://publications.waset.org/abstracts/search?q=university%20entrepreneurship" title=" university entrepreneurship"> university entrepreneurship</a>, <a href="https://publications.waset.org/abstracts/search?q=entrepreneurial%20university" title=" entrepreneurial university"> entrepreneurial university</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20growth" title=" high growth"> high growth</a>, <a href="https://publications.waset.org/abstracts/search?q=New%20Technology%20Based%20Companies%20%28NTBC%29" title=" New Technology Based Companies (NTBC)"> New Technology Based Companies (NTBC)</a>, <a href="https://publications.waset.org/abstracts/search?q=University%20Spin-Off" title=" University Spin-Off "> University Spin-Off </a> </p> <a href="https://publications.waset.org/abstracts/18172/in-search-of-high-growth-mapping-out-academic-spin-offs-performance-in-catalonia" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/18172.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">458</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9349</span> Learning Predictive Models for Efficient Energy Management of Exhibition Hall</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jeongmin%20Kim">Jeongmin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Eunju%20Lee"> Eunju Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwang%20Ryel%20Ryu"> Kwang Ryel Ryu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper addresses the problem of predictive control for energy management of large-scaled exhibition halls, where a lot of energy is consumed to maintain internal atmosphere under certain required conditions. Predictive control achieves better energy efficiency by optimizing the operation of air-conditioning facilities with not only the current but also some future status taken into account. In this paper, we propose to use predictive models learned from past sensor data of hall environment, for use in optimizing the operating plan for the air-conditioning facilities by simulating future environmental change. We have implemented an emulator of an exhibition hall by using EnergyPlus, a widely used building energy emulation tool, to collect data for learning environment-change models. Experimental results show that the learned models predict future change highly accurately on a short-term basis. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=predictive%20control" title="predictive control">predictive control</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20management" title=" energy management"> energy management</a>, <a href="https://publications.waset.org/abstracts/search?q=machine%20learning" title=" machine learning"> machine learning</a>, <a href="https://publications.waset.org/abstracts/search?q=optimization" title=" optimization"> optimization</a> </p> <a href="https://publications.waset.org/abstracts/59405/learning-predictive-models-for-efficient-energy-management-of-exhibition-hall" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/59405.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">274</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9348</span> Non-Singular Gravitational Collapse of a Dust Cloud in Einstein-Cartan Theory</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Amir%20Hadi%20Ziaie">Amir Hadi Ziaie</a>, <a href="https://publications.waset.org/abstracts/search?q=Mostafa%20Hashemi"> Mostafa Hashemi</a>, <a href="https://publications.waset.org/abstracts/search?q=Shahram%20Jalalzadeh"> Shahram Jalalzadeh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> It is now known that the end state of the collapse process of a dense star under its own gravity is the formation of a spacetime singularity. This is the spacetime event where the energy density and spacetime curvature diverge, and the classical general relativity breaks down. As we know, a realistic star is composed of fermions so that their spin effects could alter the final fate of the collapse scenario. The underlying theory within which the inclusion of spin effects can be worked out is the Einstein-Cartan theory. In this theory, the spacetime torsion which is defined as a geometrical quantity, is related to an intrinsic angular momentum of fermions (spin). In this work, we study the collapse process of a homogeneous spin fluid in such a framework and show that taking into account the spin effects of the collapsing cloud could prevent the formation of spacetime singularity. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=gravitational%20collapse" title="gravitational collapse">gravitational collapse</a>, <a href="https://publications.waset.org/abstracts/search?q=einstein-cartan%20theory" title=" einstein-cartan theory"> einstein-cartan theory</a>, <a href="https://publications.waset.org/abstracts/search?q=spacetime%20singularity" title=" spacetime singularity"> spacetime singularity</a>, <a href="https://publications.waset.org/abstracts/search?q=black%20hole%20physics" title=" black hole physics"> black hole physics</a> </p> <a href="https://publications.waset.org/abstracts/50866/non-singular-gravitational-collapse-of-a-dust-cloud-in-einstein-cartan-theory" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/50866.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">398</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9347</span> Rashba Spin Orbit Interaction Effect on Multiphoton Optical Transitions in a Quantum Dot for Bioimaging</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Pradip%20Kumar%20Jha">Pradip Kumar Jha</a>, <a href="https://publications.waset.org/abstracts/search?q=Manoj%20Kumar"> Manoj Kumar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We demonstrate in this work the effect of Rashba spin orbit interaction on multiphoton optical transitions of a quantum dot in the presence of THz laser field and external static magnetic field. This combination is solved by accurate non-perturbative Floquet theory. Investigations are made for the optical response of intraband transition between the various states of the conduction band with spin flipping. Enhancement and power broadening observed for excited states probabilities with increase of external fields are directly linked to the emission spectra of QD and will be useful for making future bioimaging devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bioimaging" title="bioimaging">bioimaging</a>, <a href="https://publications.waset.org/abstracts/search?q=multiphoton%20processes" title=" multiphoton processes"> multiphoton processes</a>, <a href="https://publications.waset.org/abstracts/search?q=spin%20orbit%20interaction" title=" spin orbit interaction"> spin orbit interaction</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20dot" title=" quantum dot"> quantum dot</a> </p> <a href="https://publications.waset.org/abstracts/43836/rashba-spin-orbit-interaction-effect-on-multiphoton-optical-transitions-in-a-quantum-dot-for-bioimaging" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/43836.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">480</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9346</span> Electronic Structure and Optical Properties of YNi₄Si-Type GdNi₅: A Coulomb Corrected Local-Spin Density Approximation Study</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sapan%20Mohan%20Saini">Sapan Mohan Saini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, we report the calculations on the electronic and optical properties of YNi₄Si-type GdNi₅ compound. Calculations are performed using the full-potential augmented plane wave (FPLAPW) method in the framework of density functional theory (DFT). The Coulomb corrected local-spin density approximation (LSDA+U) in the self-interaction correction (SIC) has been used for exchange-correlation potential. Spin polarised calculations of band structure show that several bands cross the Fermi level (EF) reflect the metallic character. Analysis of density of states (DOS) demonstrates that spin up Gd-f states lie around 7.5 eV below EF and spin down Gd-f lie around 4.5 eV above EF. We found Ni-3d states mainly contribute to DOS from -5.0 eV to the EF. Our calculated results of optical conductivity agree well with the experimental data. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electronic%20structure" title="electronic structure">electronic structure</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20properties" title=" optical properties"> optical properties</a>, <a href="https://publications.waset.org/abstracts/search?q=FPLAPW%20method" title=" FPLAPW method"> FPLAPW method</a>, <a href="https://publications.waset.org/abstracts/search?q=YNi%E2%82%84Si-type%20GdNi%E2%82%85" title=" YNi₄Si-type GdNi₅"> YNi₄Si-type GdNi₅</a> </p> <a href="https://publications.waset.org/abstracts/107398/electronic-structure-and-optical-properties-of-yni4si-type-gdni5-a-coulomb-corrected-local-spin-density-approximation-study" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/107398.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">171</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9345</span> Correlations in the Ising Kagome Lattice</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Antonio%20Aguilar%20Aguilar">Antonio Aguilar Aguilar</a>, <a href="https://publications.waset.org/abstracts/search?q=Eliezer%20Braun%20Guitler"> Eliezer Braun Guitler</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Using a previously developed procedure and with the aid of algebraic software, a two-dimensional generalized Ising model with a 4×2 unitary cell (UC), we obtain a Kagome Lattice with twelve different spin-spin values of interaction, in order to determine the partition function per spin L(T). From the partition function we can study the magnetic behavior of the system. Because of the competition phenomenon between spins, a very complex behavior among them in a variety of magnetic states can be observed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=correlations" title="correlations">correlations</a>, <a href="https://publications.waset.org/abstracts/search?q=Ising" title=" Ising"> Ising</a>, <a href="https://publications.waset.org/abstracts/search?q=Kagome" title=" Kagome"> Kagome</a>, <a href="https://publications.waset.org/abstracts/search?q=exact%20functions" title=" exact functions"> exact functions</a> </p> <a href="https://publications.waset.org/abstracts/17208/correlations-in-the-ising-kagome-lattice" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/17208.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">368</span> </span> 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