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Ilahi</title> <meta name="description" content="Search results for: Soufiene Ilahi"> <meta name="keywords" content="Soufiene Ilahi"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none navbar-toggler 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id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="Soufiene Ilahi"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 8</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: Soufiene Ilahi</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">8</span> Investigation of Doping Effects on Nonradiative Recombination Parameters in Bulk GaAs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Soufiene%20Ilahi">Soufiene Ilahi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We have used Photothermal deflection spectroscopy PTD to investigate the impact of doping on electronics properties of bulk. Then, the extraction of these parameters is performed by fitting the theoretical curves to the experimental PTD ones. We have remarked that electron mobility in p type C-doped GaAs is about 300 cm2/V·s. Accordinagly, the diffusion length of minority carrier lifetime is equal to 5 (± 7%), 5 (± 4,4%) and 1.42 µm (± 7,2 %) for the Cr, C and Si doped GaAs respectively. Surface recombination velocity varies randomly that can be found around of 7942 m/s, 100 m/s and 153 m/s GaAs doped Si, Cr, C, respectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonradiative%20lifetime" title="nonradiative lifetime">nonradiative lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=mobility%20of%20minority%20carrier" title=" mobility of minority carrier"> mobility of minority carrier</a>, <a href="https://publications.waset.org/abstracts/search?q=diffusion%20length" title=" diffusion length"> diffusion length</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20and%20interface%20recombination%20in%20GaAs" title=" surface and interface recombination in GaAs"> surface and interface recombination in GaAs</a> </p> <a href="https://publications.waset.org/abstracts/166602/investigation-of-doping-effects-on-nonradiative-recombination-parameters-in-bulk-gaas" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/166602.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">72</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">7</span> Thermal Annealing Effects on Nonradiative Recombination Parameters of GaInAsSb/GaSb by Means of Photothermal Defection Technique</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Souha%20Bouagila">Souha Bouagila</a>, <a href="https://publications.waset.org/abstracts/search?q=Soufiene%20Ilahi"> Soufiene Ilahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Noureddine%20Yacoubi"> Noureddine Yacoubi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We have used Photothermal deflection spectroscopy PTD to investigate the impact of thermal annealing on electronics properties of GaInAsSb/GaSb.GaInAsSb used as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). We have remarked that surface recombination velocity (SRV) from 7963 m / s (± 6.3%) to 1450 m / s (± 3.6) for as grown to sample annealed for 60 min. Accordingly, Force Microscopy images analyses agree well with the measure of surface recombination velocity. We have found that Root-Mean-Square Roughness (RMS) decreases as respect of annealing time. In addition, we have that the diffusion length and minority carrier mobility have been enhanced according to annealing time. However, due to annealing effects, the interface recombination velocity (IRV) is increased from 1196 m / s (± 5) to 6000 m/s (5%) for GaInAsSb in respect of annealed times. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonradiative%20lifetime" title="nonradiative lifetime">nonradiative lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=mobility%20of%20minority%20carrier" title=" mobility of minority carrier"> mobility of minority carrier</a>, <a href="https://publications.waset.org/abstracts/search?q=diffusion%20length" title=" diffusion length"> diffusion length</a>, <a href="https://publications.waset.org/abstracts/search?q=Surface%20and%20interface%20recombination%20velocity" title=" Surface and interface recombination velocity"> Surface and interface recombination velocity</a> </p> <a href="https://publications.waset.org/abstracts/165142/thermal-annealing-effects-on-nonradiative-recombination-parameters-of-gainassbgasb-by-means-of-photothermal-defection-technique" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/165142.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">74</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">6</span> Thermal Annealing Effects on Minority Carrier Lifetime in GaInAsSb/GaSb by Means of Photothermal Defletion Technique</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Souha%20Bouagila">Souha Bouagila</a>, <a href="https://publications.waset.org/abstracts/search?q=Soufiene%20Ilahi"> Soufiene Ilahi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Photothermal deflection technique PTD have been employed to study the impact of thermal annealing on minority carrier in GaInAsSb grown on GaSb substarte, which used as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). Photothermal defelction technique is nondescructive and accurate technique for electronics parameters determination. The measure of non-radiative recombination, electronic diffusivity, surface and interface recombination are effectuated by fitting the theoretical PTD signal to the experimental ones. As a results, we have found that Non-radiative lifetime increases from 3.8 µs (± 3, 9 %) for not annealed GaInAsSb to the 7.1 µs (± 5, 7%). In fact, electronic diffusivity D increased from 60.1 (± 3.9 %) to 89.6 cm2 / s (± 2.7%) for the as grown to that annealed for 60 min respectively. We have remarked that surface recombination velocity (SRV) decreases from 7963 m / s (± 6.3%) to 1450 m / s (± 3.6). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonradiative%20lifetime" title="nonradiative lifetime">nonradiative lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=mobility%20of%20minority%20carrier" title=" mobility of minority carrier"> mobility of minority carrier</a>, <a href="https://publications.waset.org/abstracts/search?q=diffusion%20length" title=" diffusion length"> diffusion length</a>, <a href="https://publications.waset.org/abstracts/search?q=Surface%20and%20interface%20recombination%20velocity.GaInAsSb%20active%20layer" title=" Surface and interface recombination velocity.GaInAsSb active layer"> Surface and interface recombination velocity.GaInAsSb active layer</a> </p> <a href="https://publications.waset.org/abstracts/169083/thermal-annealing-effects-on-minority-carrier-lifetime-in-gainassbgasb-by-means-of-photothermal-defletion-technique" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/169083.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">69</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5</span> Thermal Conductivity and Optical Absorption of GaInAsSb/GaSb Laser Structure: Impact of Annealing Time</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Soufiene%20Ilahi">Soufiene Ilahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Noureddine%20Yacoubi"> Noureddine Yacoubi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> GaInAsSb grown on GaSb substrate is an interesting material employed as an active layer in vertical-cavity surface-emitting lasers (VCSELs) operating in mid-infrared emission. This material presents some advantages like highs optical absorption coefficient and good thermal conductivity, which is very desirable for VCSEL application. In this paper, we have investigated the effects of thermal annealing on optical properties and thermal conductivity of GaInAsSb/GaSb. The studies are carried out by means of the photo thermal deflection spectroscopy technique (PDS). In fact, optical absorption spectrum and thermal conductivity have been determined by a comparison between the experimental and theoretical phases of the PDS signal. We have found that thermal conductivity increased significantly to 13 W/m.K for GaInAsSb annealed during 60 min. In addition, we have found that bandgap energy is blue-shifted around 30 meV. The amplitudes signal of PDS reveals multiple reflections as a function of annealing time, which reflect the high crystalline quality of the layer. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=thermal%20conductivity" title="thermal conductivity">thermal conductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=bandgap%20energy%20of%20GaInAsSb" title=" bandgap energy of GaInAsSb"> bandgap energy of GaInAsSb</a>, <a href="https://publications.waset.org/abstracts/search?q=GaInAsSb%20active%20layer" title=" GaInAsSb active layer"> GaInAsSb active layer</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20absorption" title=" optical absorption"> optical absorption</a> </p> <a href="https://publications.waset.org/abstracts/136451/thermal-conductivity-and-optical-absorption-of-gainassbgasb-laser-structure-impact-of-annealing-time" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/136451.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">151</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4</span> Doping Density Effects on Minority Carrier Lifetime in Bulk GaAs by Means of Photothermal Deflection Technique</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Soufiene%20Ilahi">Soufiene Ilahi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Photothermal effect occurs when absorbed light energy that generate a thermal wave that propagate into the sample and surrounding media. Subsequently, the propagation of the vibration of phonons or electrons causes heat transfer. In fact, heat energy is provided by non-radiative recombination process that occurs in semiconductors sample. Three heats sources are identified: surface recombination, bulk recombination and carrier thermalisation. In the last few years, Photothermal Deflection Technique PTD is a nondestructive and accurate technique that prove t ability for electronics properties investigation. In this paper, we have studied the influence of doping on minority carrier lifetime, i.e, nonradiative lifetime, surface and diffusion coefficient. In fact, we have measured the photothermal signal of two sample of GaAs doped with C et Cr.In other hand , we have developed a theoretical model that takes into account of thermal and electronics diffusion equations .In order to extract electronics parameters of GaAs samples, we have fitted the theoretical signal of PTD to the experimental ones. As a results, we have found that nonradiative lifetime is around of 4,3 x 10-8 (±11,24%) and 5 x 10-8 (±14,32%) respectively for GaAs : Si doped and Cr doped. Accordingly, the diffusion coefficient is equal 4,6 *10-4 (± 3,2%) and 5* 10-4 (± 0,14%) foe the Cr, C and Si doped GaAs respectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonradiative%20lifetime" title="nonradiative lifetime">nonradiative lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=mobility%20of%20minority%20carrier" title=" mobility of minority carrier"> mobility of minority carrier</a>, <a href="https://publications.waset.org/abstracts/search?q=diffusion%20length" title=" diffusion length"> diffusion length</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20and%20interface%20recombination%20in%20GaAs" title=" surface and interface recombination in GaAs"> surface and interface recombination in GaAs</a> </p> <a href="https://publications.waset.org/abstracts/169011/doping-density-effects-on-minority-carrier-lifetime-in-bulk-gaas-by-means-of-photothermal-deflection-technique" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/169011.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">65</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3</span> Two Layer Photo-Thermal Deflection Model to Investigate the Electronic Properties in BGaAs/GaAs Alloys</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=S.%20Ilahi">S. Ilahi</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Baira"> M. Baira</a>, <a href="https://publications.waset.org/abstracts/search?q=F.%20Saidi"> F. Saidi</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20Yacoubi"> N. Yacoubi</a>, <a href="https://publications.waset.org/abstracts/search?q=L.%20Auvray"> L. Auvray</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Maaref"> H. Maaref</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Photo-thermal deflection technique (PTD) is used to study the nonradiative recombination process in BGaAs/GaAs alloy with boron composition of 3% and 8% grown by metal organic chemical vapor deposition (MOCVD). A two layer theoretical model has been developed taking into account both thermal and electronic contribution in the photothermal signal allowing to extract the electronic parameters namely electronic diffusivity, surface and interface recombination. It is found that the increase of boron composition alters the BGaAs epilayers transport properties. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=photothermal%20defelction%20technique" title="photothermal defelction technique">photothermal defelction technique</a>, <a href="https://publications.waset.org/abstracts/search?q=two%20layer%20model" title=" two layer model"> two layer model</a>, <a href="https://publications.waset.org/abstracts/search?q=BGaAs%2FGaAs%20alloys" title=" BGaAs/GaAs alloys"> BGaAs/GaAs alloys</a>, <a href="https://publications.waset.org/abstracts/search?q=boron%20composition" title=" boron composition"> boron composition</a> </p> <a href="https://publications.waset.org/abstracts/10638/two-layer-photo-thermal-deflection-model-to-investigate-the-electronic-properties-in-bgaasgaas-alloys" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/10638.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">300</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">2</span> Modelling of Relocation and Battery Autonomy Problem on Electric Cars Sharing Dynamic by Using Discrete Event Simulation and Petri Net</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Taha%20Benarbia">Taha Benarbia</a>, <a href="https://publications.waset.org/abstracts/search?q=Kay%20W.%20Axhausen"> Kay W. Axhausen</a>, <a href="https://publications.waset.org/abstracts/search?q=Anugrah%20Ilahi"> Anugrah Ilahi </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Electric car sharing system as ecologic transportation increasing in the world. The complexity of managing electric car sharing systems, especially one-way trips and battery autonomy have direct influence to on supply and demand of system. One must be able to precisely model the demand and supply of these systems to better operate electric car sharing and estimate its effect on mobility management and the accessibility that it provides in urban areas. In this context, our work focus to develop performances optimization model of the system based on discrete event simulation and stochastic Petri net. The objective is to search optimal decisions and management parameters of the system in order to fulfil at best demand while minimizing undesirable situations. In this paper, we present new model of electric cars sharing with relocation based on monitoring system. The proposed approach also help to precise the influence of battery charging level on the behaviour of system as important decision parameter of this complex and dynamical system. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electric%20car-sharing%20systems" title="electric car-sharing systems">electric car-sharing systems</a>, <a href="https://publications.waset.org/abstracts/search?q=smart%20mobility" title=" smart mobility"> smart mobility</a>, <a href="https://publications.waset.org/abstracts/search?q=Petri%20nets%20modelling" title=" Petri nets modelling"> Petri nets modelling</a>, <a href="https://publications.waset.org/abstracts/search?q=discrete%20event%20simulation" title=" discrete event simulation"> discrete event simulation</a> </p> <a href="https://publications.waset.org/abstracts/86638/modelling-of-relocation-and-battery-autonomy-problem-on-electric-cars-sharing-dynamic-by-using-discrete-event-simulation-and-petri-net" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/86638.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">183</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1</span> Thermal Conductivity and Optical Absorption of GaAsPN/GaP for Tandem Solar Cells: Effect of Rapid Thermal Annealing </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=S.%20Ilahi">S. Ilahi</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Almosni"> S. Almosni</a>, <a href="https://publications.waset.org/abstracts/search?q=F.%20Chouchene"> F. Chouchene</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Perrin"> M. Perrin</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20Zelazna"> K. Zelazna</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20Yacoubi"> N. Yacoubi</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20Kudraweic"> R. Kudraweic</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20Rale"> P. Rale</a>, <a href="https://publications.waset.org/abstracts/search?q=L.%20Lombez"> L. Lombez</a>, <a href="https://publications.waset.org/abstracts/search?q=J.%20F.%20%20Guillemoles"> J. F. Guillemoles</a>, <a href="https://publications.waset.org/abstracts/search?q=O.%20Durand"> O. Durand</a>, <a href="https://publications.waset.org/abstracts/search?q=C.%20Cornet"> C. Cornet</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Great efforts have been dedicated to obtain high quality of GaAsPN. The properties of GaAsPN have played a great part on the development of solar cells devices based in Si substrate. The incorporation of N in GaAsPN that having a band gap around of 1.7 eV is of special interest in view of growing in Si substrate. In fact, post-growth and rapid thermal annealing (RTA) could be an effective way to improve the quality of the layer. Then, the inﬂuence of growth conditions and post-growth annealing on optical and thermal parameters is considered. We have used Photothermal deflection spectroscopy PDS to investigate the impact of rapid thermal annealing on thermal and optical properties of GaAsPN. In fact, the principle of the PDS consists to illuminate the sample by a modulated monochromatic light beam. Then, the absorbed energy is converted into heat through the nonradiative recombination process. The generated thermal wave propagates into the sample and surrounding media creating a refractive-index gradient giving rise to the deflection of a laser probe beam skimming the sample surface. The incident light is assumed to be uniform, and only the sample absorbs the light. In conclusion, the results are promising revealing an improvement in absorption coefficient and thermal conductivity. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=GaAsPN%20absorber" title="GaAsPN absorber">GaAsPN absorber</a>, <a href="https://publications.waset.org/abstracts/search?q=photothermal%20defelction%20technique%20PDS" title=" photothermal defelction technique PDS"> photothermal defelction technique PDS</a>, <a href="https://publications.waset.org/abstracts/search?q=photonics%20on%20silicon" title=" photonics on silicon"> photonics on silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20conductivity" title=" thermal conductivity"> thermal conductivity</a> </p> <a href="https://publications.waset.org/abstracts/62722/thermal-conductivity-and-optical-absorption-of-gaaspngap-for-tandem-solar-cells-effect-of-rapid-thermal-annealing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/62722.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">354</span> </span> </div> </div> </div> </main> <footer> <div id="infolinks" class="pt-3 pb-2"> <div class="container"> <div style="background-color:#f5f5f5;" class="p-3"> <div class="row"> <div class="col-md-2"> <ul class="list-unstyled"> About <li><a href="https://waset.org/page/support">About Us</a></li> <li><a href="https://waset.org/page/support#legal-information">Legal</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/WASET-16th-foundational-anniversary.pdf">WASET celebrates its 16th foundational anniversary</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Account <li><a href="https://waset.org/profile">My Account</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Explore <li><a href="https://waset.org/disciplines">Disciplines</a></li> <li><a href="https://waset.org/conferences">Conferences</a></li> <li><a href="https://waset.org/conference-programs">Conference Program</a></li> <li><a href="https://waset.org/committees">Committees</a></li> <li><a href="https://publications.waset.org">Publications</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Research <li><a href="https://publications.waset.org/abstracts">Abstracts</a></li> <li><a href="https://publications.waset.org">Periodicals</a></li> <li><a href="https://publications.waset.org/archive">Archive</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Open Science <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Open-Science-Philosophy.pdf">Open Science Philosophy</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Open-Science-Award.pdf">Open Science Award</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Open-Society-Open-Science-and-Open-Innovation.pdf">Open Innovation</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Postdoctoral-Fellowship-Award.pdf">Postdoctoral Fellowship Award</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/Scholarly-Research-Review.pdf">Scholarly Research Review</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Support <li><a href="https://waset.org/page/support">Support</a></li> <li><a href="https://waset.org/profile/messages/create">Contact Us</a></li> <li><a href="https://waset.org/profile/messages/create">Report Abuse</a></li> </ul> </div> </div> </div> </div> </div> <div class="container text-center"> <hr style="margin-top:0;margin-bottom:.3rem;"> <a href="https://creativecommons.org/licenses/by/4.0/" target="_blank" class="text-muted small">Creative Commons Attribution 4.0 International License</a> <div id="copy" class="mt-2">© 2024 World Academy of Science, Engineering and Technology</div> </div> </footer> <a href="javascript:" id="return-to-top"><i class="fas fa-arrow-up"></i></a> <div class="modal" id="modal-template"> <div class="modal-dialog"> <div class="modal-content"> <div class="row m-0 mt-1"> <div class="col-md-12"> <button type="button" class="close" data-dismiss="modal" aria-label="Close"><span aria-hidden="true">×</span></button> </div> </div> <div class="modal-body"></div> </div> </div> </div> <script src="https://cdn.waset.org/static/plugins/jquery-3.3.1.min.js"></script> <script src="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/js/bootstrap.bundle.min.js"></script> <script src="https://cdn.waset.org/static/js/site.js?v=150220211556"></script> <script> jQuery(document).ready(function() { /*jQuery.get("https://publications.waset.org/xhr/user-menu", function (response) { jQuery('#mainNavMenu').append(response); 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