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style="padding-right:1em">来源：探索科技</span><span id="hits">阅读：402</span> </div> <div class="introduce">核心提示：第三代半导体材料又称宽禁带半导体材料,主要包括碳化硅(SiC)和氮化镓(GaN)等。与第一、二代半导体材料相比,第三代半导体材料拥有高禁带宽度、高饱和电子漂移速度、高热导率、导通阻抗小、体积小等优势,适用于5G射频和高压功率器件。</div><div id="content"><div class="content" id="article"><div>第三代半导体材料又称宽禁带半导体材料,主要包括碳化硅(SiC)和氮化镓(GaN)等。与第一、二代半导体材料相比,第三代半导体材料拥有高禁带宽度、高饱和电子漂移速度、高热导率、导通阻抗小、体积小等优势,特别适用于5G射频和高压功率器件。</div> <div> </div> <div>据集邦咨询(TrendForce)指出,因疫情趋缓所带动5G基站射频前端、手机充电器及车用能源等需求逐步提升,预期2021年GaN通讯及功率器件营收分别为6.8亿和6100万美元,年增30.8%及90.6%,SiC器件功率领域营收可达6.8亿美元,年增32%。</div> <div> </div> <div><img src="http://www.casmita.com/file/upload/202104/08/104932525.jpg" width="500" height="333" alt="" /></div> <div><img src="http://www.casmita.com/file/upload/202104/08/104956895.jpg" width="500" height="330" alt="" /></div> <div>图:GaN、SiC功率器件市场规模</div> <div> </div> <div>“十四五”规划中把第三代半导体确定为我国集成电路产业的重要发展方向。国家政策的支持下,加之行业应用蓬勃发展,第三代半导体市场发展一片利好。</div> <div> </div> <div>本路线精心挑选了11家第三代半导体领域的厂商,主要从SiC功率器件和GaN功率、射频器件进行介绍。</div> <div> </div> <div><strong>SiC功率器件</strong></div> <div> </div> <div>传统半导体工艺在高电压大电流应用中常暴露很多缺陷,如第一代半导体材料硅,其硅基功率MOSFET和IGBT在电压大于900V时,转换效率、开关频率和工作温度受到限制,无法实现更大功率。碳化硅(SiC)材料恰恰解决了这个问题,因其禁带宽度大、热导率高、电子饱和迁移速率高和击穿电场高等物理性能让碳化硅器件在高温、高压、高频和大功率电子器件领域中有着不可替代的优势。</div> <div> </div> <div><img src="http://www.casmita.com/file/upload/202104/08/105032885.jpg" width="600" height="388" alt="" /></div> <div>图:SiC 产品应用市场预测</div> <div> </div> <div>碳化硅材料作为第三代半导体材料之一,可用于制作功率器件,推动了功率半导体行业的迅速发展。据Yole预测,未来碳化硅器件的应用将会更加广泛,市场的发展也会更加迅速,主要应用集中在5G基建、新能源汽车、充电桩、特高压、城际高铁交通等方面。</div> <div> </div> <div><strong>GaN射频器件</strong></div> <div> </div> <div>与碳化硅同属第三代宽禁带半导体材料的氮化镓,拥有与碳化硅相类似的宽禁带性能优势,但在成本控制潜力上更胜一筹。相较于已经发展十多年的碳化硅,氮化镓功率器件无疑是后进者。</div> <div> </div> <div>与传统Si材料相比,基于氮化镓材料制备的功率器件具有功率密度高、能量转换效率高等优势,能够减轻电子电力元件的体积和重量,使电子系统更加微小、更加轻便,从而极大降低系统制作及生产成本。</div> <div> </div> <div>同时,由于氮化镓功率元件可以在硅基质上成长,氮化镓比碳化硅成本更加低廉,适用于中低压和高频领域。</div> <div> </div> <div><img src="http://www.casmita.com/file/upload/202104/08/105054755.jpg" width="600" height="388" alt="" /></div> <div>图:2019-2025年GaN RF器件市场预测</div> <div> </div> 氮化镓材料在射频器件和电力电子器件两个领域大放异彩。射频器件产品包括功率放大器(PA)、低噪声放大器(LNA)、射频开关器、单片微波集成芯片(MMIC)等,在5G基站、卫星、雷达和通信设备等领域应用广泛。据Yole预测,2019年到2025年GaN RF器件的应用市场复合增长率将会达到12%。氮化镓电力电子器件则更加适用于高频率、小体积、低成本、功率要求低的情况,主要应用方向集中在快充电源市场。 </div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=3947');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=3947"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> <a href="http://www.casmita.com/news/search.php?kw="></a><a href="http://www.casmita.com/news/index.php?catid=8"></a> <div class="bui-box single-mode"> <div 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