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class="introduce">核心提示：安森美半导体发布一系列新的碳化硅 (SiC) MOSFET器件，适用于功率密度、能效和可靠性攸关的高要求应用。</div><div id="content"><div class="content" id="article"> 2021年2月18日—推动高能效创新的安森美半导体 (ON Semiconductor，美国纳斯达克上市代号：ON)，发布一系列新的碳化硅 (SiC) MOSFET器件，适用于功率密度、能效和可靠性攸关的高要求应用。设计人员用新的SiC器件取代现有的硅开关技术，将在电动汽车(EV)车载充电器(OBC)、太阳能逆变器、服务器电源(PSU)、电信和不间断电源(UPS)等应用中实现显着更好的性能。 <div style="text-align: center;"><img src="http://www.casmita.com/file/upload/202102/19/093313121.jpg" width="650" height="650" alt="" /></div> <div>安森美半导体新的车规AECQ101和工业级合格的650伏(V) SiC MOSFET基于一种新的宽禁带材料，提供比硅更胜一筹的开关性能和更好的热性能，因而提高系统级能效、功率密度，及减小电磁干扰(EMI)、系统尺寸和重量。</div> <div> </div> <div>新一代SiC MOSFET采用新颖的有源单元设计，结合先进的薄晶圆技术，可在650 V击穿电压实现同类最佳的品质因数Rsp (Rdson * area)。NVBG015N065SC1、NTBG015N065SC1、NVH4L015N065SC1和NTH4L015N065SC1采用D2PAK7L和To247封装，具有市场最低的Rdson (12 mOhm)。这技术还优化能量损失品质因数，从而优化了汽车和工业应用中的性能。内置门极电阻 (Rg)为设计人员提供更大的灵活性，而无需使用外部门极电阻人为地降低器件的速度。更高的浪涌、雪崩能力和短路鲁棒性都有助于增强耐用性，从而提供更高的可靠性和更长的器件使用寿命。</div> <div> </div> <div>安森美半导体先进电源分部高级副总裁Asif Jakwani在发布新品时说：“在现代电源应用中，如电动汽车(EV)车载充电器(OBC)和可再生能源、企业计算及电信等其他应用，高能效、可靠性和功率密度是设计人员一直面临的挑战。这些新的SiC MOSFET比同等的硅开关技术显着提高性能，使工程师能够满足这些具有挑战性的设计目标。增强的性能降低损耗，从而提高能效，减少热管理需求，并降低电磁干扰(EMI)。使用这些新的SiC MOSFET的最终结果是更小、更轻、更高效和更可靠的电源方案。”</div> <div> </div> <div>新器件均为表面贴装，并提供行业标准封装类型，包括TO247和D2PAK。</div></div> </div> <div class="keytags"> <strong>标签：</strong> <a href="http://www.casmita.com/news/search.php?kw=%E5%AE%89%E6%A3%AE%E7%BE%8E%E5%8D%8A%E5%AF%BC%E4%BD%93" target="_blank" class="b">安森美半导体</a> <a href="http://www.casmita.com/news/search.php?kw=650" target="_blank" class="b">650</a> <a href="http://www.casmita.com/news/search.php?kw=V" target="_blank" class="b">V</a> <a href="http://www.casmita.com/news/search.php?kw=%E7%A2%B3%E5%8C%96%E7%A1%85" target="_blank" class="b">碳化硅</a> <a href="http://www.casmita.com/news/search.php?kw=SiC" target="_blank" class="b">SiC</a> <a href="http://www.casmita.com/news/search.php?kw=MOSFET" target="_blank" class="b">MOSFET</a> </div> <div class="award"><div 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