{"title":"Performance of InGaN\/GaN Laser Diode Based on Quaternary Alloys Stopper and Superlattice Layers","authors":"S. M. Thahab, H. Abu Hassan, Z. Hassan","volume":31,"journal":"International Journal of Chemical and Molecular Engineering","pagesStart":322,"pagesEnd":327,"ISSN":"1307-6892","URL":"https:\/\/publications.waset.org\/pdf\/6302","abstract":"<p>The optical properties of InGaN\/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN\/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W\/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.<\/p>\r\n","references":"[1] M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata , M.\r\nTanaka and O. Oda, \"High-electron-mobility AlGaN\/AlN\/GaN\r\nheterostructures grown on 100-mm-diam epitaxial AlN\/sapphire\r\ntemplates by metalorganic vapor phase epitaxy\" Appl. Phys. Lett.85,\r\np.1710, July 2004.\r\n[2] L X Wang, M C Wang, X G Hu, X J Wang, S T Chen, G. Jiao , P J Li, P Y\r\nZeng and M J Li, \"Improved DC and RF performance of AlGaN\/GaN\r\nHEMTs grown by MOCVD on sapphire substrates\"\r\nSolid-StateElectronics, 49, pp. 1387-1390, Aug 2005 .\r\n[3] V. Adivarahan, S. Wu, P J Zhang, A. Chitnis, M. Shatalov, V. Mandavilli,\r\nR. Gaska and A M Khan,\"High-efficiency 269 nm emission deep\r\nultraviolet light-emitting diodes\" Appl.Phys.Lett, 84, p.4762, May 2004\r\n.\r\n[4] T. Nishida, H. Saito and N. Kobayashi, \"Efficient and high-power\r\nAlGaN-based ultraviolet light-emitting diode grown on bulk GaN\"\r\nAppl.Phys.Lett, 79, p.711, June 2001.\r\n[5] C. Skierbiszewski, P. Perlin, I. Grzegory, R. Z Wasilewski, M. Siekacz,\r\nA. Feduniewicz, P. Wisniewski, J. Borysiuk, P. Prystawko, G. Kamler, T.\r\nSuski and S. Porowski,\" High power blue-violet InGaN laser diodes\r\ngrown on bulk GaN substrates by plasma-assisted molecular beam\r\nepitaxy\" Semiconductor. Sci. Tech, vol 20,p. 809, June 2005.\r\n[6] H Hirayama, \"Quaternary InAlGaN-based high-efficiency ultraviolet\r\nlight-emitting diodes\" J.Appl.Phys, 97, p.091101, April 2005.\r\n[7] K H Cho, H K Lee, W S Kim, S K Park, H Y Cho and H J Lee, \"Influence\r\nof growth temperature and reactor pressure on microstructural and optical\r\nproperties of InAlGaN quaternary epilayers\" J.Crystal Growth, 267,pp.\r\n67-73, 2004 ,\r\n[8] C H Chen, L Y Huang, Y F Chen, H X Jiang and J Y Lin, \"Mechanism of\r\nenhanced luminescence in InxAlyGa1-x-yN quaternary\r\nalloys\",Appl.Phys.Lett, 80,p.1397, February 2002..\r\n[9] A Yasan, R. McClintock, K. Mayes, S. R Darvish, H. Zhang, P. Kung, M.\r\nRazeghi, K S Lee and Y J Han, \"Comparison of ultraviolet light-emitting\r\ndiodes with peak emission at 340 nm grown on GaN substrate and\r\nsapphire\" Appl.Phys.Lett, 81,p.2151, July 2002 .\r\n[10] E. Monroy, N. Gogneau, D. Jalabert, E. Bellet-Amalric, Y. Hori, F.\r\nEnjalbert, S L Dang and B. Daudin., \"In incorporation during the growth\r\nof quaternary III-nitride compounds by plasma-assisted molecular beam\r\nepitaxy\" Appl.Phys.Lett, 82,p.2242, February 2003 .\r\n[11] C. Skierbiszewski, Z. R. Wasilewski , M. Siekacz, A. Feduniewicz, P.\r\nPerlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski,\r\nand S. Porowskib) \"Blue-violet InGaN laser diodes grown on bulk GaN\r\nsubstrates by plasma-assisted molecular-beam epitaxy\", High Pressure\r\nResearch Center, PAS, Soko\u253c\u00e9owska 29\/37, 01-142 Warsaw, Poland\r\nAppl.Phys.Lett., 86, 011114, December2005.\r\n[12] Integrated System Engineering (ISE TCAD) AG, Switzerland,\r\nhttp:\/\/www.synopsys.com.\r\n[13] S. M. Thahab, H. Abu Hassan and Z. Hassan, \"Performance and optical\r\ncharacteristic of InGaN MQWs laser diodes\" Opt. Exp., 15, No.5, p.2380\r\nMarch (2007).","publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 31, 2009"}