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Semiconductor Fabrication - FIB-SEM - Dualbeam - Illuminating Semiconductors
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format-standard has-post-thumbnail category-dualbeam-fib-sem category-failure-analysis category-general category-transmission-electron-microscopy tag-electronics-semiconductors tag-transmission-electron-microscope entry" aria-label="Accelerating Semiconductor Device Analysis with the Power of the Helios 5 EXL Wafer DualBeam"><header class="entry-header"><h1 class="entry-title">Accelerating Semiconductor Device Analysis with the Power of the Helios 5 EXL Wafer DualBeam</h1> <span class="post-info-author"> By <a href="https://www.thermofisher.com/blog/author/xiaotinggu/" title="Posts by Xiaoting Gu" rel="author">Xiaoting Gu</a> </span> <span class="post-info-date"> 06.26.2024 </span> </header><div class="entry-content"><h2 style="font-size: 50%;color:white;height:5px">Semiconductor fabrication challenges</h2> <p>Semiconductor fabrication is a rapidly evolving field in which the demand for timely data analysis is of the utmost importance. The Thermo Scientific Helios 5 EXL Wafer DualBeam is designed to meet this demand by providing accelerated time to actionable data, flexible TEM sample preparation, and cross-sectional SEM imaging directly from 300 mm wafers within the semiconductor fab. This instrument is specifically tailored for metrology and defect analysis.</p> <h2 style="font-size: 100%"><strong>Semiconductor technology inflections</strong></h2> <p>The semiconductor industry is experiencing significant technological advancements to meet the needs of a world generating and consuming more data (Figure 1). This is driving the development of higher-performance semiconductor devices and new fabrication challenges.<br /> For logic, devices are transitioning from FinFET to nanosheet architectures with process nodes scaling below 5 nanometers.. Additionally, dynamic random-access memory (DRAM) devices are scaling down to sub-10 nanometers, while 3D NAND devices are incorporating more stacked layers to increase capacity. Alongside scaling, advanced packaging semiconductor technologies are moving towards three-dimensional structures, with the increasing complexity of 3D IC and high-bandwidth memory (HBM) solutions.<br /> These technology advancements present new challenges in both fabricating and analyzing advanced semiconductor devices. Consequently, there is a growing need for high-resolution, precise, and efficient analysis techniques.</p> <div id="attachment_707" style="width: 1034px" class="wp-caption alignnone"><img decoding="async" aria-describedby="caption-attachment-707" class="wp-image-707 size-full" src="https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Growth-of-Data_1024x530.jpg" alt="Trend of high-performance semiconductor fabrication driven by data needs" title="Trend of high-performance semiconductor fabrication driven by data needs" width="1024" height="530" srcset="https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Growth-of-Data_1024x530.jpg 1024w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Growth-of-Data_1024x530-300x155.jpg 300w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Growth-of-Data_1024x530-768x398.jpg 768w" sizes="(max-width: 1024px) 100vw, 1024px" /><p id="caption-attachment-707" class="wp-caption-text">Figure 1. The exponential increase in data generation has fueled the fabrication of high-performance semiconductors.</p></div> <h2 style="font-size: 100%"><strong>The importance of TEM data in semiconductor fabrication</strong></h2> <p>As semiconductor devices become more complex, the need for fast access to transmission electron microscopy (TEM) data has significantly increased. TEM data plays a critical role in measuring shrinking metrology targets and characterizing buried defects, which are challenging to assess with existing solutions in the fab. In fact, the demand for TEM samples has risen by approximately 7.6 times compared to a decade ago (Figure 2). Going forward, the reliance on TEM data is expected to grow further as devices continue to evolve and become more intricate.</p> <div id="attachment_709" style="width: 1034px" class="wp-caption alignnone"><img decoding="async" aria-describedby="caption-attachment-709" class="size-full wp-image-709" src="https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Tem-Data-Demand_1024x530.jpg" alt="Importance of TEM metrology data in semiconductor fabrication" title="Importance of TEM metrology data in semiconductor fabrication" width="1024" height="530" srcset="https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Tem-Data-Demand_1024x530.jpg 1024w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Tem-Data-Demand_1024x530-300x155.jpg 300w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Tem-Data-Demand_1024x530-768x398.jpg 768w" sizes="(max-width: 1024px) 100vw, 1024px" /><p id="caption-attachment-709" class="wp-caption-text">Figure 2. Technology inflections drive the increase of TEM data demand.</p></div> <h2 style="font-size: 100%"><strong>Accelerating Time to actionable TEM data</strong></h2> <p>Traditionally, semiconductor TEM analysis required sending wafers to external labs, resulting in time-consuming processes, complicated data tracing, and delayed feedback. The Helios 5 EXL Wafer DualBeam offers a transformative solution by enabling in-fab analysis, eliminating the need for wafer transportation, and streamlining the workflow. With the Helios 5 EXL Wafer DualBeam placed directly in the fab, analysis can be performed on the intact wafer, significantly reducing the time to obtain critical data. This in-fab workflow also simplifies wafer tracking and data tracing, empowers fab engineers with more control over job queues and results, and facilitates faster turnaround times.</p> <h2 style="font-size: 100%"><strong>Benefits of the Helios 5 EXL Wafer DualBeam</strong></h2> <p>The Helios 5 EXL Wafer DualBeam provides three key benefits that enhance semiconductor analysis:<br /> 1) User-Friendly Operation鈥擳he instrument鈥檚 intuitive interface and automation capabilities allow operators to easily navigate and execute analysis tasks. Automated cross-sectioning and TEM sample preparation free up operators to focus on other crucial tasks, boosting overall productivity.<br /> 2) Superior Sample and Data Quality鈥擳he Helios 5 EXL Wafer DualBeam ensures high-resolution scanning electron microscopy (SEM) imaging and precise focused ion beam (FIB) milling, enabling accurate endpointing on specific targets. This capability proves valuable for various processes, including top-down, planar, and inverted TEM preparations (Figure 3). The instrument also facilitates consistent SEM and FIB alignments, ensuring reliable and repeatable results.<br /> 3) Wide Variety of Device Analysis鈥擶ith its versatile capabilities, the Helios 5 EXL Wafer DualBeam caters to diverse semiconductor device analysis needs. From full-wafer automated cross-sectioning analysis to automated multi-site TEM sample preparation, the instrument offers a comprehensive solution for advanced semiconductor fabrication.</p> <div id="attachment_711" style="width: 1034px" class="wp-caption aligncenter"><img loading="lazy" decoding="async" aria-describedby="caption-attachment-711" class="size-full wp-image-711" src="https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Ultra-Thin-TEM_1024x1024.jpg" alt="Ultra-thin TEM metrology sample of a gate-all-around device" title="Ultra-thin TEM metrology sample of a gate-all-around device" width="1024" height="1024" srcset="https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Ultra-Thin-TEM_1024x1024.jpg 1024w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Ultra-Thin-TEM_1024x1024-300x300.jpg 300w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Ultra-Thin-TEM_1024x1024-150x150.jpg 150w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Ultra-Thin-TEM_1024x1024-768x768.jpg 768w, https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/Ultra-Thin-TEM_1024x1024-80x80.jpg 80w" sizes="(max-width: 1024px) 100vw, 1024px" /><p id="caption-attachment-711" class="wp-caption-text">Figure 3. Ultra-thin TEM sample of a gate-all-around device prepared by the Helios 5 EXL Wafer DualBeam for TEM metrology analysis.</p></div> <h2 style="font-size: 100%"><strong>Summary</strong></h2> <p>The Thermo Scientific line of Helios Wafer DualBeams has a long-standing history of success, with over 200 instruments installed globally. The latest generation, the Helios 5 EXL Wafer DualBeam, continues this legacy by addressing the evolving challenges faced by semiconductor engineers. By leveraging in-fab analysis and the instrument鈥檚 user-friendly operation, superior sample quality, and diverse device analysis capabilities, engineers can have faster access to data to meet the challenges posed by advancing semiconductor technologies. With Thermo Fisher’s expertise and commitment to excellence, the Helios 5 EXL Wafer DualBeam stands as a reliable and efficient tool for semiconductor analysis.<br /> Interested in learning more? Please visit the <a href="https://www.thermofisher.com/us/en/home/electron-microscopy/products/dualbeam-fib-sem-microscopes/helios-5-exl-dualbeam.html?cid=msd_semi_reg_xmkt_ldb_1276001_gl_oso_blg_ms7cgd&utm_source=comms-blog&utm_medium=semi%20blog&utm_campaign=msd_semi_reg_xmkt_ldb_1276001_gl_oso_blg_ms7cgd">Helios 5 EXL Wafer DualBeam</a> webpage and watch the on-demand webinar recording聽<a href="https://www.thermofisher.com/us/en/home/about-us/events/industrial/wafer-dualbeam-workflow-webinar.html?cid=msd_semi_reg_xmkt_ldb_1276001_gl_oso_blg_ms7cgd&utm_source=comms-blog&utm_medium=semi%20blog&utm_campaign=msd_semi_reg_xmkt_ldb_1276001_gl_oso_blg_ms7cgd">Helios5 EXL Wafer DualBeam Webinar</a> to explore the unique capabilities of this instrument.</p> <!--<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:trackback="http://madskills.com/public/xml/rss/module/trackback/"> <rdf:Description rdf:about="https://www.thermofisher.com/blog/semiconductors/semiconductor-fabrication-analysis-using-helios5-exl-dualbeam/" dc:identifier="https://www.thermofisher.com/blog/semiconductors/semiconductor-fabrication-analysis-using-helios5-exl-dualbeam/" dc:title="Accelerating Semiconductor Device Analysis with the Power of the Helios 5 EXL Wafer DualBeam" trackback:ping="https://www.thermofisher.com/blog/semiconductors/semiconductor-fabrication-analysis-using-helios5-exl-dualbeam/trackback/" /> </rdf:RDF>--> <div class="jp-relatedposts"> <div class="related-post related-1"> <a href="https://www.thermofisher.com/blog/semiconductors/semiconductor-nanoprobing-boosts-tem-analysis-success-rates-on-advanced-logic-devices/"><img width="310" height="274" src="https://www.thermofisher.com/blog/semiconductors/wp-content/uploads/sites/23/2024/06/np-iv-social-graphic-no-logo-1200x630-1-310x274.jpg" class="attachment-grid size-grid wp-post-image" alt="NProber Success Rate" decoding="async" 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