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Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si 3 N 4 , Al 2 O 3 , Ta 2 O 5 and two deposition methods, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Selecting Al 2 O 3 deposited by ALD, high density of 35 nF/mm 2 is obtained with low leakage current. Statistical measurements put forward the industrial robustness of the device integrated in BiCMOS technology. Three circuits embedding this new device are characterized: a high-pass filter, a voltage-controlled oscillator (VCO), and a phase-locked loop (PLL). They demonstrate excellent performances with significant area and assembly costs savings.","grobid_abstract_attachment_id":"40597107"},"document_type":"paper","pre_hit_view_count_baseline":null,"quality":"high","language":"en","title":"Development of Embedded Three-Dimensional 35-nF/mm MIM Capacitor and BiCMOS Circuits Characterization","broadcastable":true,"draft":null,"has_indexable_attachment":true,"indexable":true}}["work"]; window.loswp.workCoauthors = [39556932]; window.loswp.locale = "en"; window.loswp.countryCode = "SG"; window.loswp.cwvAbTestBucket = ""; window.loswp.designVariant = "ds_vanilla"; window.loswp.fullPageMobileSutdModalVariant = "full_page_mobile_sutd_modal"; window.loswp.useOptimizedScribd4genScript = false; window.loginModal = {}; window.loginModal.appleClientId = 'edu.academia.applesignon'; window.userInChina = "false";</script><script defer="" src="https://accounts.google.com/gsi/client"></script><div class="ds-loswp-container"><div class="ds-work-card--grid-container"><div class="ds-work-card--container js-loswp-work-card"><div class="ds-work-card--cover"><div class="ds-work-cover--wrapper"><div class="ds-work-cover--container"><button class="ds-work-cover--clickable js-swp-download-button" data-signup-modal="{"location":"swp-splash-paper-cover","attachmentId":40597107,"attachmentType":"pdf"}"><img alt="First page of “Development of Embedded Three-Dimensional 35-nF/mm MIM Capacitor and BiCMOS Circuits Characterization”" class="ds-work-cover--cover-thumbnail" src="https://0.academia-photos.com/attachment_thumbnails/40597107/mini_magick20190220-1710-11og9n9.png?1550716909" /><img alt="PDF Icon" class="ds-work-cover--file-icon" src="//a.academia-assets.com/images/single_work_splash/adobe_icon.svg" /><div class="ds-work-cover--hover-container"><span class="material-symbols-outlined" style="font-size: 20px" translate="no">download</span><p>Download Free PDF</p></div><div class="ds-work-cover--ribbon-container">Download Free PDF</div><div class="ds-work-cover--ribbon-triangle"></div></button></div></div></div><div class="ds-work-card--work-information"><h1 class="ds-work-card--work-title">Development of Embedded Three-Dimensional 35-nF/mm MIM Capacitor and BiCMOS Circuits Characterization</h1><div class="ds-work-card--work-authors ds-work-card--detail"><a class="ds-work-card--author js-wsj-grid-card-author ds2-5-body-md ds2-5-body-link" data-author-id="39556932" href="https://independent.academia.edu/JeanchristopheGiraudin"><img alt="Profile image of Jean-christophe Giraudin" class="ds-work-card--author-avatar" src="//a.academia-assets.com/images/s65_no_pic.png" />Jean-christophe Giraudin</a></div><div class="ds-work-card--detail"><div class="ds-work-card--work-metadata"><div class="ds-work-card--work-metadata__stat"><span class="material-symbols-outlined" style="font-size: 20px" translate="no">visibility</span><p class="ds2-5-body-sm" id="work-metadata-view-count">…</p></div><div class="ds-work-card--work-metadata__stat"><span class="material-symbols-outlined" style="font-size: 20px" translate="no">description</span><p class="ds2-5-body-sm">9 pages</p></div><div class="ds-work-card--work-metadata__stat"><span class="material-symbols-outlined" style="font-size: 20px" translate="no">link</span><p class="ds2-5-body-sm">1 file</p></div></div><script>(async () => { const workId = 19396449; const worksViewsPath = "/v0/works/views?subdomain_param=api&work_ids%5B%5D=19396449"; const getWorkViews = async (workId) => { const response = await fetch(worksViewsPath); if (!response.ok) { throw new Error('Failed to load work views'); } const data = await response.json(); return data.views[workId]; }; // Get the view count for the work - we send this immediately rather than waiting for // the DOM to load, so it can be available as soon as possible (but without holding up // the backend or other resource requests, because it's a bit expensive and not critical). const viewCount = await getWorkViews(workId); const updateViewCount = (viewCount) => { try { const viewCountNumber = parseInt(viewCount, 10); if (viewCountNumber === 0) { // Remove the whole views element if there are zero views. document.getElementById('work-metadata-view-count')?.parentNode?.remove(); return; } const commaizedViewCount = viewCountNumber.toLocaleString(); const viewCountBody = document.getElementById('work-metadata-view-count'); if (!viewCountBody) { throw new Error('Failed to find work views element'); } viewCountBody.textContent = `${commaizedViewCount} views`; } catch (error) { // Remove the whole views element if there was some issue parsing. document.getElementById('work-metadata-view-count')?.parentNode?.remove(); throw new Error(`Failed to parse view count: ${viewCount}`, error); } }; // If the DOM is still loading, wait for it to be ready before updating the view count. if (document.readyState === "loading") { document.addEventListener('DOMContentLoaded', () => { updateViewCount(viewCount); }); // Otherwise, just update it immediately. } else { updateViewCount(viewCount); } })();</script></div><p class="ds-work-card--work-abstract ds-work-card--detail ds2-5-body-md">This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si 3 N 4 , Al 2 O 3 , Ta 2 O 5 and two deposition methods, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Selecting Al 2 O 3 deposited by ALD, high density of 35 nF/mm 2 is obtained with low leakage current. Statistical measurements put forward the industrial robustness of the device integrated in BiCMOS technology. Three circuits embedding this new device are characterized: a high-pass filter, a voltage-controlled oscillator (VCO), and a phase-locked loop (PLL). They demonstrate excellent performances with significant area and assembly costs savings.</p><div class="ds-work-card--button-container"><button class="ds2-5-button js-swp-download-button" data-signup-modal="{"location":"continue-reading-button--work-card","attachmentId":40597107,"attachmentType":"pdf","workUrl":"https://www.academia.edu/19396449/Development_of_Embedded_Three_Dimensional_35_nF_mm_MIM_Capacitor_and_BiCMOS_Circuits_Characterization"}">See full PDF</button><button class="ds2-5-button ds2-5-button--secondary js-swp-download-button" data-signup-modal="{"location":"download-pdf-button--work-card","attachmentId":40597107,"attachmentType":"pdf","workUrl":"https://www.academia.edu/19396449/Development_of_Embedded_Three_Dimensional_35_nF_mm_MIM_Capacitor_and_BiCMOS_Circuits_Characterization"}"><span class="material-symbols-outlined" style="font-size: 20px" translate="no">download</span>Download PDF</button></div><div class="ds-signup-banner-trigger-container"><div class="ds-signup-banner-trigger ds-signup-banner-trigger-control"></div></div><div class="ds-signup-banner ds-signup-banner-control"><div id="ds-signup-banner-close-button"><button class="ds2-5-button ds2-5-button--secondary ds2-5-button--inverse"><span class="material-symbols-outlined" style="font-size: 20px" translate="no">close</span></button></div><div class="ds-signup-banner-ctas"><img src="//a.academia-assets.com/images/academia-logo-capital-white.svg" /><h4 class="ds2-5-heading-serif-sm">Sign up for access to the world's latest research</h4><button class="ds2-5-button ds2-5-button--inverse ds2-5-button--full-width js-swp-download-button" data-signup-modal="{"location":"signup-banner"}">Sign up for free<span class="material-symbols-outlined" style="font-size: 20px" translate="no">arrow_forward</span></button></div><div class="ds-signup-banner-divider"></div><div class="ds-signup-banner-reasons"><div class="ds-signup-banner-reasons-item"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">check</span><span>Get notified about relevant papers</span></div><div class="ds-signup-banner-reasons-item"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">check</span><span>Save papers to use in your research</span></div><div class="ds-signup-banner-reasons-item"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">check</span><span>Join the discussion with peers</span></div><div class="ds-signup-banner-reasons-item"><span class="material-symbols-outlined" style="font-size: 24px" translate="no">check</span><span>Track your impact</span></div></div></div><script>(() => { // Set up signup banner show/hide behavior: // 1. 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Several 0.25 μm-BiCMOS standard Si technology MIM capacitors with different device geometries were realised, measured and modeled in the GHz frequency range. Two different insulators are compared: SiO2 of permittivity 4.2 and Si3N4 of permittivity 7.5. The theoretical SiO2 and Si3N4 capacitance densities are respectively 1.06 fF/μm2 and 2.07 fF/μm2 for thickness of 35 nm and 32 nm. Experimental devices were characterised using a HP8720ES network analyser and on-wafer measurements with microwaves probes. The parasitic capacitances of the pad frame were accurately subtracted from the measurement data with a SOLT calibration and with an open de-embedding structure. A lumped element equivalent circuit for MIM capacitor is used to represent the different capacitors and other surrounding elements. All capacitor were analysed and experimental S-parameters were compared to the lumped element equiva...</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"RF MIM capacitors using Si3N4 dielectric in standard industrial BiCMOS technology","attachmentId":43180282,"attachmentType":"pdf","work_url":"https://www.academia.edu/15453514/RF_MIM_capacitors_using_Si3N4_dielectric_in_standard_industrial_BiCMOS_technology","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/15453514/RF_MIM_capacitors_using_Si3N4_dielectric_in_standard_industrial_BiCMOS_technology"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="1" data-entity-id="7622034" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/7622034/Integration_of_a_high_density_Ta_2O_5_MIM_capacitor_following_3D_damascene_architecture_compatible_with_copper_interconnects">Integration of a high density Ta 2O 5 MIM capacitor following 3D damascene architecture compatible with copper interconnects</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="13771850" href="https://independent.academia.edu/JoaquinTorres1">Joaquin Torres</a></div><p class="ds-related-work--metadata ds2-5-body-xs">Microelectronic Engineering, 2006</p><p class="ds-related-work--abstract ds2-5-body-sm">To face with the continuous integrated circuit densification, passive components size has to be reduced, particularly for RF and analog applications where lots of them are needed. A Metal-Insulator-Metal (MIM) capacitor is integrated with a high developed area architecture to increase the capacitance density and limit encumbrance. The combination of this architecture with Ta 2 O 5 dielectric with a permittivity of 25 allows capacitance densities of more than 15 fF/lm 2 . As metal insulator interface is critical, two stacks TiN/Ta 2 O 5 / TiN and TiN/Ta 2 O 5 /Cu are integrated among copper interconnects, evaluated and compared.</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Integration of a high density Ta 2O 5 MIM capacitor following 3D damascene architecture compatible with copper interconnects","attachmentId":48394902,"attachmentType":"pdf","work_url":"https://www.academia.edu/7622034/Integration_of_a_high_density_Ta_2O_5_MIM_capacitor_following_3D_damascene_architecture_compatible_with_copper_interconnects","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/7622034/Integration_of_a_high_density_Ta_2O_5_MIM_capacitor_following_3D_damascene_architecture_compatible_with_copper_interconnects"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="2" data-entity-id="105110565" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/105110565/High_capacitance_density_of_185_nF_mm2_achieved_in_three_dimensional_MIM_structures_using_TiO2_as_a_dielectric">High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="221127135" href="https://independent.academia.edu/AhmadChaker1">Ahmad Chaker</a></div><p class="ds-related-work--metadata ds2-5-body-xs">Applied Physics Letters, 2017</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric","attachmentId":104654304,"attachmentType":"pdf","work_url":"https://www.academia.edu/105110565/High_capacitance_density_of_185_nF_mm2_achieved_in_three_dimensional_MIM_structures_using_TiO2_as_a_dielectric","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/105110565/High_capacitance_density_of_185_nF_mm2_achieved_in_three_dimensional_MIM_structures_using_TiO2_as_a_dielectric"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="3" data-entity-id="25579471" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/25579471/Challenges_of_High_Precision_Capacitor_Integration">Challenges of High-Precision Capacitor Integration</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="48839352" href="https://independent.academia.edu/ApniWahdat">imran khan</a></div><p class="ds-related-work--metadata ds2-5-body-xs">2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2008</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Challenges of High-Precision Capacitor Integration","attachmentId":45909474,"attachmentType":"pdf","work_url":"https://www.academia.edu/25579471/Challenges_of_High_Precision_Capacitor_Integration","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/25579471/Challenges_of_High_Precision_Capacitor_Integration"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="4" data-entity-id="88881536" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/88881536/MIM_Capacitor_Integration_for_Mixed_Signal_RF_Applications">MIM Capacitor Integration for Mixed-Signal/RF Applications</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="230165849" href="https://independent.academia.edu/ChitHweiNg">Chit Hwei Ng</a></div><p class="ds-related-work--metadata ds2-5-body-xs">IEEE Transactions on Electron Devices, 2005</p><p class="ds-related-work--abstract ds2-5-body-sm">The relentless drive toward high-speed and highdensity silicon-based integrated circuits (ICs) has necessitated significant advances in processing technology. The entrance of copper metallization in IC manufacturing has resulted in new challenges in metal-insulator-metal (MIM) capacitor fabrication, one of the key building blocks in analog/mixed signal/RFCMOS circuits. The requirement to reduce passive chip space has led to active researches for MIM with high dielectric constant () film. This paper provides an overview of MIM capacitor integration issues with the transition from AlCu backend of line (BEOL) to Cu BEOL. The key to MIM capacitor electrical properties can be achieved with optimized dielectrics. The different MIM capacitor architectures published are also described. Special emphasis is made on the properties of various MIM with high-dielectrics in the last section.</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"MIM Capacitor Integration for Mixed-Signal/RF Applications","attachmentId":92782923,"attachmentType":"pdf","work_url":"https://www.academia.edu/88881536/MIM_Capacitor_Integration_for_Mixed_Signal_RF_Applications","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/88881536/MIM_Capacitor_Integration_for_Mixed_Signal_RF_Applications"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="5" data-entity-id="91674334" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/91674334/Device_characteristics_of_the_3_d_bicmos_technology_using_selective_epitaxial_growth_and_lateral_solid_phase_epitaxy">Device characteristics of the 3-d bicmos technology using selective epitaxial growth and lateral solid phase epitaxy</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="19482538" href="https://independent.academia.edu/MahenderKumar4">Mahender Kumar</a></div><p class="ds-related-work--metadata ds2-5-body-xs">IEEE Transactions on Electron Devices, 2002</p><p class="ds-related-work--abstract ds2-5-body-sm">Device characteristics of the BiCMOS technology using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) are reported. Results indicate that the current drive of the PMOS devices on the LSPE layer is only 13% lower than that of the bulk PMOS devices, and the propagation delay of the three-dimensional (3-D) inverter built using this technology is 23% faster than that of the conventional bulk inverter. The bipolar transistors fabricated in the SEG regions also provide good performance with a peak of 17 GHz and of 4.3 5.3 V. The SEG/LSPE technique for 3-D integration has the advantages of low cost, low thermal budget, and good material quality for device fabrication. This 3-D BiCMOS technology is very promising for lower power, high-density, and high-speed integrated circuits (ICs) applications.</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Device characteristics of the 3-d bicmos technology using selective epitaxial growth and lateral solid phase epitaxy","attachmentId":94894988,"attachmentType":"pdf","work_url":"https://www.academia.edu/91674334/Device_characteristics_of_the_3_d_bicmos_technology_using_selective_epitaxial_growth_and_lateral_solid_phase_epitaxy","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/91674334/Device_characteristics_of_the_3_d_bicmos_technology_using_selective_epitaxial_growth_and_lateral_solid_phase_epitaxy"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="6" data-entity-id="17603044" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/17603044/Characterization_and_Modeling_of_Atomic_Layer_Deposited_High_Density_Trench_Capacitors_in_Silicon">Characterization and Modeling of Atomic Layer Deposited High-Density Trench Capacitors in Silicon</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="37441942" href="https://independent.academia.edu/FredRoozeboom">Fred Roozeboom</a><span>, </span><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="33122199" href="https://independent.academia.edu/JohanKlootwijk">Johan Klootwijk</a></div><p class="ds-related-work--metadata ds2-5-body-xs">IEEE Transactions on Semiconductor Manufacturing, 2000</p><p class="ds-related-work--abstract ds2-5-body-sm">A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited $Al_{2}O_{3}$ and $TiN$ is presented. It is shown that in situ ozone annealing of the $Al_{2}O_{3}$ layers prior to the $TiN$ electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage of the devices. The self-inductance and self-resistance of the capacitors as derived from $S$-parameter measurements up to 10 GHz are very small, as low as 4 pH and 6 ${\rm m}\Omega$ for 19.1 ${\rm mm}^{2}$ electrode surface. These data are shown to be consistent with a theoretical model.</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Characterization and Modeling of Atomic Layer Deposited High-Density Trench Capacitors in Silicon","attachmentId":42244221,"attachmentType":"pdf","work_url":"https://www.academia.edu/17603044/Characterization_and_Modeling_of_Atomic_Layer_Deposited_High_Density_Trench_Capacitors_in_Silicon","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/17603044/Characterization_and_Modeling_of_Atomic_Layer_Deposited_High_Density_Trench_Capacitors_in_Silicon"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="7" data-entity-id="56249708" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/56249708/MEMS_based_digital_variable_capacitors_with_a_high_k_dielectric_insulator">MEMS based digital variable capacitors with a high-k dielectric insulator</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="121052" href="https://cambridge.academia.edu/NormanAFleck">Norman A Fleck</a></div><p class="ds-related-work--metadata ds2-5-body-xs">Sensors and Actuators A: Physical, 2006</p><p class="ds-related-work--abstract ds2-5-body-sm">A novel MEMS based digital variable capacitor was designed and fabricated. The device consists of a multi-cantilever (or bridge) with variable length, suspended over a bottom electrode. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. A high-k dielectric HfO 2 is also introduced to increase the capacitance value and tuning range. These devices were fabricated by a four-mask process, and electrical tests have confirmed the stepwise increase of the capacitance with bias. However it was found that it is difficult to pull-in more than 10 cantilevers and most of the cantilevers remained on the substrate when the bias is off. Charge injection from the pulled-in electrode into the insulator increases the pull-in voltage drastically, and prevents pulling-in more cantilevers. Trapped charges in the insulator produce an electrostatic force and keep the cantilever stuck on the substrate.</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"MEMS based digital variable capacitors with a high-k dielectric insulator","attachmentId":71727999,"attachmentType":"pdf","work_url":"https://www.academia.edu/56249708/MEMS_based_digital_variable_capacitors_with_a_high_k_dielectric_insulator","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/56249708/MEMS_based_digital_variable_capacitors_with_a_high_k_dielectric_insulator"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="8" data-entity-id="10714473" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/10714473/Embedded_Decoupling_Capacitors_up_to_80_nF_on_Multichip_Module_Deposited_with_Quasi_Three_Dimensional_Metal_Insulator_Metal_Structure">Embedded Decoupling Capacitors up to 80 nF on Multichip Module-Deposited with Quasi-Three-Dimensional Metal-Insulator-Metal Structure</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="26132278" href="https://purdue.academia.edu/JIMINMAENG">JIMIN MAENG</a></div><p class="ds-related-work--metadata ds2-5-body-xs">Japanese Journal of Applied Physics, 2008</p><p class="ds-related-work--abstract ds2-5-body-sm">Embedded capacitors with available capacitances up to $80 nF have been implemented on a thin-film multichip moduledeposited (MCM-D) substrate. By cost-effective silicon wet etching, a new metal-insulator-metal (MIM) structure named quasi-three-dimensional MIM capacitor has been realized. The groove structure formed by silicon wet etching increases effective capacitance area, thus enhancing capacitance density by 1.5 times. No additional mask or process step is required to form the groove structure since it is simultaneously patterned and etched with ground bumps that are for effective interconnection. The implemented capacitors have capacitances from 2 to 78 nF with a scalable density of 3.6 nF/mm 2 , indicating that they are excellent candidates for high-power decoupling application.</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Embedded Decoupling Capacitors up to 80 nF on Multichip Module-Deposited with Quasi-Three-Dimensional Metal-Insulator-Metal Structure","attachmentId":36674136,"attachmentType":"pdf","work_url":"https://www.academia.edu/10714473/Embedded_Decoupling_Capacitors_up_to_80_nF_on_Multichip_Module_Deposited_with_Quasi_Three_Dimensional_Metal_Insulator_Metal_Structure","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/10714473/Embedded_Decoupling_Capacitors_up_to_80_nF_on_Multichip_Module_Deposited_with_Quasi_Three_Dimensional_Metal_Insulator_Metal_Structure"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div><div class="ds-related-work--container js-wsj-grid-card" data-collection-position="9" data-entity-id="3150270" data-sort-order="default"><a class="ds-related-work--title js-wsj-grid-card-title ds2-5-body-md ds2-5-body-link" href="https://www.academia.edu/3150270/Characterization_and_modeling_of_stacked_MIM_on_chip_capacitors_with_high_capacitance_density_up_to_20_GHz_frequency_region">Characterization and modeling of stacked MIM on-chip capacitors with high-capacitance density up to 20 GHz frequency region</a><div class="ds-related-work--metadata"><a class="js-wsj-grid-card-author ds2-5-body-sm ds2-5-body-link" data-author-id="3602555" href="https://independent.academia.edu/HyunwonMoon">Hyunwon Moon</a></div><p class="ds-related-work--metadata ds2-5-body-xs">Microwave and Optical Technology Letters, 2009</p><p class="ds-related-work--abstract ds2-5-body-sm">In this article, double-stacked and triple-stacked metal-insulator-metal (MIM) capacitors fabricated in 0.18 μm CMOS process are reported. These provide high-capacitance density of 2 fF/μm2 and 3.2 fF/μm2 and excellent dc and RF characteristics, respectively. The lumped circuit model of the stacked MIM capacitors is presented for high-frequency applications up to 20 GHz. The stacked MIM capacitors offer a reduced chip area for a given capacitance value and are expected to be a viable choice for integration of RF/mixed-mode circuits in a single chip. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1235–1238, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24305</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Characterization and modeling of stacked MIM on-chip capacitors with high-capacitance density up to 20 GHz frequency region","attachmentId":50436538,"attachmentType":"pdf","work_url":"https://www.academia.edu/3150270/Characterization_and_modeling_of_stacked_MIM_on_chip_capacitors_with_high_capacitance_density_up_to_20_GHz_frequency_region","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-wsj-grid-card-view-pdf" href="https://www.academia.edu/3150270/Characterization_and_modeling_of_stacked_MIM_on_chip_capacitors_with_high_capacitance_density_up_to_20_GHz_frequency_region"><span class="ds2-5-text-link__content">View PDF</span><span class="material-symbols-outlined" style="font-size: 18px" translate="no">chevron_right</span></a></div></div></div></div><div class="ds-sticky-ctas--wrapper js-loswp-sticky-ctas hidden"><div class="ds-sticky-ctas--grid-container"><div class="ds-sticky-ctas--container"><button class="ds2-5-button js-swp-download-button" data-signup-modal="{"location":"continue-reading-button--sticky-ctas","attachmentId":40597107,"attachmentType":"pdf","workUrl":null}">See full PDF</button><button class="ds2-5-button ds2-5-button--secondary js-swp-download-button" data-signup-modal="{"location":"download-pdf-button--sticky-ctas","attachmentId":40597107,"attachmentType":"pdf","workUrl":null}"><span class="material-symbols-outlined" style="font-size: 20px" translate="no">download</span>Download PDF</button></div></div></div><div class="ds-below-fold--grid-container"><div class="ds-work--container js-loswp-embedded-document"><div class="attachment_preview" data-attachment="Attachment_40597107" style="display: none"><div class="js-scribd-document-container"><div class="scribd--document-loading js-scribd-document-loader" style="display: block;"><img alt="Loading..." src="//a.academia-assets.com/images/loaders/paper-load.gif" /><p>Loading Preview</p></div></div><div style="text-align: center;"><div class="scribd--no-preview-alert js-preview-unavailable"><p>Sorry, preview is currently unavailable. 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data-author-id="34175893" href="https://ihp-microelectronics.academia.edu/JD%C4%85browski">Jarek Dąbrowski</a></div><p class="ds-related-work--metadata ds2-5-body-xs">IEEE Transactions on Electron Devices, 2000</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"High-Quality\u003ctex\u003e$hboxAl_2hboxO_3/hboxPr_2hboxO_3/hboxAl_2hboxO_3$\u003c/tex\u003eMIM Capacitors for RF Applications","attachmentId":43542472,"attachmentType":"pdf","work_url":"https://www.academia.edu/15137998/High_Quality_tex_hboxAl_2hboxO_3_hboxPr_2hboxO_3_hboxAl_2hboxO_3_tex_MIM_Capacitors_for_RF_Applications","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline 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href="https://independent.academia.edu/TedMoise">Ted Moise</a></div><p class="ds-related-work--metadata ds2-5-body-xs">Applied Physics Letters, 2001</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Demonstration of scaled (≥0.12 μm[sup 2]) Pb(Zr,Ti)O[sub 3] capacitors on W plugs with Al interconnect","attachmentId":47507981,"attachmentType":"pdf","work_url":"https://www.academia.edu/27248688/Demonstration_of_scaled_0_12_%CE%BCm_sup_2_Pb_Zr_Ti_O_sub_3_capacitors_on_W_plugs_with_Al_interconnect","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-related-work-grid-card-view-pdf" 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class="ds-related-work--metadata ds2-5-body-xs">IEEE Transactions on Microwave Theory and Techniques, 1995</p><div class="ds-related-work--ctas"><button class="ds2-5-text-link ds2-5-text-link--inline js-swp-download-button" data-signup-modal="{"location":"wsj-grid-card-download-pdf-modal","work_title":"Three-dimensional passive circuit technology for ultra-compact MMICs","attachmentId":115570520,"attachmentType":"pdf","work_url":"https://www.academia.edu/120412698/Three_dimensional_passive_circuit_technology_for_ultra_compact_MMICs","alternativeTracking":true}"><span class="material-symbols-outlined" style="font-size: 18px" translate="no">download</span><span class="ds2-5-text-link__content">Download free PDF</span></button><a class="ds2-5-text-link ds2-5-text-link--inline js-related-work-grid-card-view-pdf" href="https://www.academia.edu/120412698/Three_dimensional_passive_circuit_technology_for_ultra_compact_MMICs"><span class="ds2-5-text-link__content">View PDF</span><span 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