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optoelectronic spiking process</title> <meta name="description" content="Search results for: optoelectronic spiking process"> <meta name="keywords" content="optoelectronic spiking process"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="optoelectronic spiking process"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 15330</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: optoelectronic spiking process</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15330</span> Indium-Gallium-Zinc Oxide Photosynaptic Device with Alkylated Graphene Oxide for Optoelectronic Spike Processing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Seyong%20Oh">Seyong Oh</a>, <a href="https://publications.waset.org/abstracts/search?q=Jin-Hong%20Park"> Jin-Hong Park</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recently, neuromorphic computing based on brain-inspired artificial neural networks (ANNs) has attracted huge amount of research interests due to the technological abilities to facilitate massively parallel, low-energy consuming, and event-driven computing. In particular, research on artificial synapse that imitate biological synapses responsible for human information processing and memory is in the spotlight. Here, we demonstrate a photosynaptic device, wherein a synaptic weight is governed by a mixed spike consisting of voltage and light spikes. Compared to the device operated only by the voltage spike, ∆G in the proposed photosynaptic device significantly increased from -2.32nS to 5.95nS with no degradation of nonlinearity (NL) (potentiation/depression values were changed from 4.24/8 to 5/8). Furthermore, the Modified National Institute of Standards and Technology (MNIST) digit pattern recognition rates improved from 36% and 49% to 50% and 62% in ANNs consisting of the synaptic devices with 20 and 100 weight states, respectively. We expect that the photosynaptic device technology processed by optoelectronic spike will play an important role in implementing the neuromorphic computing systems in the future. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20synapse" title="optoelectronic synapse">optoelectronic synapse</a>, <a href="https://publications.waset.org/abstracts/search?q=IGZO%20%28Indium-Gallium-Zinc%20Oxide%29%20photosynaptic%20device" title=" IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device"> IGZO (Indium-Gallium-Zinc Oxide) photosynaptic device</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20spiking%20process" title=" optoelectronic spiking process"> optoelectronic spiking process</a>, <a href="https://publications.waset.org/abstracts/search?q=neuromorphic%20computing" title=" neuromorphic computing"> neuromorphic computing</a> </p> <a href="https://publications.waset.org/abstracts/93884/indium-gallium-zinc-oxide-photosynaptic-device-with-alkylated-graphene-oxide-for-optoelectronic-spike-processing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/93884.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">173</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15329</span> Artificial Neurons Based on Memristors for Spiking Neural Networks</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yan%20Yu">Yan Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=Wang%20Yu"> Wang Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=Chen%20Xintong"> Chen Xintong</a>, <a href="https://publications.waset.org/abstracts/search?q=Liu%20Yi"> Liu Yi</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhang%20Yanzhong"> Zhang Yanzhong</a>, <a href="https://publications.waset.org/abstracts/search?q=Wang%20Yanji"> Wang Yanji</a>, <a href="https://publications.waset.org/abstracts/search?q=Chen%20Xingyu"> Chen Xingyu</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhang%20Miaocheng"> Zhang Miaocheng</a>, <a href="https://publications.waset.org/abstracts/search?q=Tong%20Yi"> Tong Yi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Neuromorphic computing based on spiking neural networks (SNNs) has emerged as a promising avenue for building the next generation of intelligent computing systems. Owing to its high-density integration, low power, and outstanding nonlinearity, memristors have attracted emerging attention on achieving SNNs. However, fabricating a low-power and robust memristor-based spiking neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a TiO₂-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, used to realize single layer fully connected (FC) SNNs. Moreover, our TiO₂-based resistive switching (RS) memristors realize spiking-time-dependent-plasticity (STDP), originating from the Ag diffusion-based filamentary mechanism. This work demonstrates that TiO2-based memristors may provide an efficient method to construct hardware neuromorphic computing systems. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=leaky%20integrate-and-fire" title="leaky integrate-and-fire">leaky integrate-and-fire</a>, <a href="https://publications.waset.org/abstracts/search?q=memristor" title=" memristor"> memristor</a>, <a href="https://publications.waset.org/abstracts/search?q=spiking%20neural%20networks" title=" spiking neural networks"> spiking neural networks</a>, <a href="https://publications.waset.org/abstracts/search?q=spiking-time-dependent-plasticity" title=" spiking-time-dependent-plasticity"> spiking-time-dependent-plasticity</a> </p> <a href="https://publications.waset.org/abstracts/147746/artificial-neurons-based-on-memristors-for-spiking-neural-networks" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/147746.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">134</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15328</span> Characteristics of GaAs/InGaP and AlGaAs/GaAs/InAlGaP Npn Heterostructural Optoelectronic Switches</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Der-Feng%20Guo">Der-Feng Guo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Optoelectronic switches have attracted a considerable attention in the semiconductor research field due to their potential applications in optical computing systems and optoelectronic integrated circuits (OEICs). With high gains and high-speed operations, npn heterostructures can be used to produce promising optoelectronic switches. It is known that the bulk barrier and heterostructure-induced potential spike act important roles in the characteristics of the npn heterostructures. To investigate the effects of bulk barrier and potential spike heights on the optoelectronic switching of the npn heterostructures, GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated in this work. It is seen that the illumination decreases the switching voltage Vs and increases the switching current Is, and thus the OFF state is under dark and ON state under illumination in the optical switching of the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS characteristics, the Vs and Is present contrary trends, and the OFF state is under illumination and ON state under dark. The studied HSOSs show quite different switching variations with incident light, which are mainly attributed to the bulk barrier and potential spike heights affected by photogenerated carriers. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bulk%20barrier" title="bulk barrier">bulk barrier</a>, <a href="https://publications.waset.org/abstracts/search?q=heterostructure" title=" heterostructure"> heterostructure</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20switch" title=" optoelectronic switch"> optoelectronic switch</a>, <a href="https://publications.waset.org/abstracts/search?q=potential%20spike" title=" potential spike"> potential spike</a> </p> <a href="https://publications.waset.org/abstracts/56272/characteristics-of-gaasingap-and-algaasgaasinalgap-npn-heterostructural-optoelectronic-switches" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56272.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">238</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15327</span> Hafnium Doped Zno Nanostructures: An Eco-Friendly Synthesis for Optoelectronic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Achehboune">Mohamed Achehboune</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohammed%20Khenfouch"> Mohammed Khenfouch</a>, <a href="https://publications.waset.org/abstracts/search?q=Issam%20Boukhoubza"> Issam Boukhoubza</a>, <a href="https://publications.waset.org/abstracts/search?q=Bakang%20Mothudi"> Bakang Mothudi</a>, <a href="https://publications.waset.org/abstracts/search?q=Izeddine%20Zorkani"> Izeddine Zorkani</a>, <a href="https://publications.waset.org/abstracts/search?q=Anouar%20Jorio"> Anouar Jorio</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Zinc Oxide (ZnO) nanostructures have been attracting growing interest in recent years; their optical and electrical properties make them useful as attractive and promising materials for optoelectronic applications. In this study, pure and Hafnium doped ZnO nanostructures were synthesized using a green processing method. The structural, optical and electrical properties of samples were investigated structural and optical spectroscopies and electrical measurements. The synthesis and chemical composition of pure and Hafnium doped ZnO were confirmed by SEM observation. The XRD studies of Hafnium doped ZnO demonstrate the formation of wurtzite structure with preferred c-axis orientation. Moreover, the optical and electrical properties of doped material have improved after the doping process. The experimental results obtained for our material show that Hf doped ZnO nanostructures could be a promising material in optoelectronic applications such as photovoltaic cell and light emitting diode devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=green%20synthesis" title="green synthesis">green synthesis</a>, <a href="https://publications.waset.org/abstracts/search?q=hafnium-doped-zinc%20oxide" title=" hafnium-doped-zinc oxide"> hafnium-doped-zinc oxide</a>, <a href="https://publications.waset.org/abstracts/search?q=nanostructures" title=" nanostructures"> nanostructures</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic" title=" optoelectronic"> optoelectronic</a> </p> <a href="https://publications.waset.org/abstracts/80753/hafnium-doped-zno-nanostructures-an-eco-friendly-synthesis-for-optoelectronic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80753.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">269</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15326</span> Latency-Based Motion Detection in Spiking Neural Networks</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mohammad%20Saleh%20Vahdatpour">Mohammad Saleh Vahdatpour</a>, <a href="https://publications.waset.org/abstracts/search?q=Yanqing%20Zhang"> Yanqing Zhang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Understanding the neural mechanisms underlying motion detection in the human visual system has long been a fascinating challenge in neuroscience and artificial intelligence. This paper presents a spiking neural network model inspired by the processing of motion information in the primate visual system, particularly focusing on the Middle Temporal (MT) area. In our study, we propose a multi-layer spiking neural network model to perform motion detection tasks, leveraging the idea that synaptic delays in neuronal communication are pivotal in motion perception. Synaptic delay, determined by factors like axon length and myelin insulation, affects the temporal order of input spikes, thereby encoding motion direction and speed. Overall, our spiking neural network model demonstrates the feasibility of capturing motion detection principles observed in the primate visual system. The combination of synaptic delays, learning mechanisms, and shared weights and delays in SMD provides a promising framework for motion perception in artificial systems, with potential applications in computer vision and robotics. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=neural%20network" title="neural network">neural network</a>, <a href="https://publications.waset.org/abstracts/search?q=motion%20detection" title=" motion detection"> motion detection</a>, <a href="https://publications.waset.org/abstracts/search?q=signature%20detection" title=" signature detection"> signature detection</a>, <a href="https://publications.waset.org/abstracts/search?q=convolutional%20neural%20network" title=" convolutional neural network"> convolutional neural network</a> </p> <a href="https://publications.waset.org/abstracts/174855/latency-based-motion-detection-in-spiking-neural-networks" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/174855.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">88</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15325</span> Comparison of Spiking Neuron Models in Terms of Biological Neuron Behaviours</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fikret%20Yalcinkaya">Fikret Yalcinkaya</a>, <a href="https://publications.waset.org/abstracts/search?q=Hamza%20Unsal"> Hamza Unsal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> To understand how neurons work, it is required to combine experimental studies on neural science with numerical simulations of neuron models in a computer environment. In this regard, the simplicity and applicability of spiking neuron modeling functions have been of great interest in computational neuron science and numerical neuroscience in recent years. Spiking neuron models can be classified by exhibiting various neuronal behaviors, such as spiking and bursting. These classifications are important for researchers working on theoretical neuroscience. In this paper, three different spiking neuron models; Izhikevich, Adaptive Exponential Integrate Fire (AEIF) and Hindmarsh Rose (HR), which are based on first order differential equations, are discussed and compared. First, the physical meanings, derivatives, and differential equations of each model are provided and simulated in the Matlab environment. Then, by selecting appropriate parameters, the models were visually examined in the Matlab environment and it was aimed to demonstrate which model can simulate well-known biological neuron behaviours such as Tonic Spiking, Tonic Bursting, Mixed Mode Firing, Spike Frequency Adaptation, Resonator and Integrator. As a result, the Izhikevich model has been shown to perform Regular Spiking, Continuous Explosion, Intrinsically Bursting, Thalmo Cortical, Low-Threshold Spiking and Resonator. The Adaptive Exponential Integrate Fire model has been able to produce firing patterns such as Regular Ignition, Adaptive Ignition, Initially Explosive Ignition, Regular Explosive Ignition, Delayed Ignition, Delayed Regular Explosive Ignition, Temporary Ignition and Irregular Ignition. The Hindmarsh Rose model showed three different dynamic neuron behaviours; Spike, Burst and Chaotic. From these results, the Izhikevich cell model may be preferred due to its ability to reflect the true behavior of the nerve cell, the ability to produce different types of spikes, and the suitability for use in larger scale brain models. The most important reason for choosing the Adaptive Exponential Integrate Fire model is that it can create rich ignition patterns with fewer parameters. The chaotic behaviours of the Hindmarsh Rose neuron model, like some chaotic systems, is thought to be used in many scientific and engineering applications such as physics, secure communication and signal processing. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Izhikevich" title="Izhikevich">Izhikevich</a>, <a href="https://publications.waset.org/abstracts/search?q=adaptive%20exponential%20integrate%20fire" title=" adaptive exponential integrate fire"> adaptive exponential integrate fire</a>, <a href="https://publications.waset.org/abstracts/search?q=Hindmarsh%20Rose" title=" Hindmarsh Rose"> Hindmarsh Rose</a>, <a href="https://publications.waset.org/abstracts/search?q=biological%20neuron%20behaviours" title=" biological neuron behaviours"> biological neuron behaviours</a>, <a href="https://publications.waset.org/abstracts/search?q=spiking%20neuron%20models" title=" spiking neuron models"> spiking neuron models</a> </p> <a href="https://publications.waset.org/abstracts/91443/comparison-of-spiking-neuron-models-in-terms-of-biological-neuron-behaviours" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/91443.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">180</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15324</span> Dynamics of the Coupled Fitzhugh-Rinzel Neurons</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sanjeev%20Kumar%20Sharma">Sanjeev Kumar Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Arnab%20Mondal"> Arnab Mondal</a>, <a href="https://publications.waset.org/abstracts/search?q=Ranjit%20Kumar%20Upadhyay"> Ranjit Kumar Upadhyay</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Excitable cells often produce different oscillatory activities that help us to understand the transmitting and processing of signals in the neural system. We consider a FitzHugh-Rinzel (FH-R) model and studied the different dynamics of the model by considering the parameter c as the predominant parameter. The model exhibits different types of neuronal responses such as regular spiking, mixed-mode bursting oscillations (MMBOs), elliptic bursting, etc. Based on the bifurcation diagram, we consider the three regimes (MMBOs, elliptic bursting, and quiescent state). An analytical treatment for the occurrence of the supercritical Hopf bifurcation is studied. Further, we extend our study to a network of a hundred neurons by considering the bi-directional synaptic coupling between them. In this article, we investigate the alternation of spiking propagation and bursting phenomena of an uncoupled and coupled FH-R neurons. We explore that the complete graph of heterogenous desynchronized neurons can exhibit different types of bursting oscillations for certain coupling strength. For higher coupling strength, all the neurons in the network show complete synchronization. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=excitable%20neuron%20model" title="excitable neuron model">excitable neuron model</a>, <a href="https://publications.waset.org/abstracts/search?q=spiking-bursting" title=" spiking-bursting"> spiking-bursting</a>, <a href="https://publications.waset.org/abstracts/search?q=stability%20and%20bifurcation" title=" stability and bifurcation"> stability and bifurcation</a>, <a href="https://publications.waset.org/abstracts/search?q=synchronization%20networks" title=" synchronization networks"> synchronization networks</a> </p> <a href="https://publications.waset.org/abstracts/116729/dynamics-of-the-coupled-fitzhugh-rinzel-neurons" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/116729.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">128</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15323</span> Spiking Behavior in Memristors with Shared Top Electrode Configuration</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Manoj%20Kumar">B. Manoj Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=C.%20Malavika"> C. Malavika</a>, <a href="https://publications.waset.org/abstracts/search?q=E.%20S.%20Kannan"> E. S. Kannan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The objective of this study is to investigate the switching behavior of two vertically aligned memristors connected by a shared top electrode, a configuration that significantly deviates from the conventional single oxide layer sandwiched between two electrodes. The device is fabricated by bridging copper electrodes with mechanically exfoliated van der Waals metal (specifically tantalum disulfide and tantalum diselenide). The device demonstrates threshold-switching behavior in its I-V characteristics. When the input voltage signal is ramped with voltages below the threshold, the output current shows spiking behavior, resembling integrated and firing actions without extra circuitry. We also investigated the self-reset behavior of the device. Using a continuous constant voltage bias, we activated the device to the firing state. After removing the bias and reapplying it shortly afterward, the current returned to its initial state. This indicates that the device can spontaneously return to its resting state. The outcome of this investigation offers a fresh perspective on memristor-based device design and an efficient method to construct hardware for neuromorphic computing systems. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=integrated%20and%20firing" title="integrated and firing">integrated and firing</a>, <a href="https://publications.waset.org/abstracts/search?q=memristor" title=" memristor"> memristor</a>, <a href="https://publications.waset.org/abstracts/search?q=spiking%20behavior" title=" spiking behavior"> spiking behavior</a>, <a href="https://publications.waset.org/abstracts/search?q=threshold%20switching" title=" threshold switching"> threshold switching</a> </p> <a href="https://publications.waset.org/abstracts/183438/spiking-behavior-in-memristors-with-shared-top-electrode-configuration" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/183438.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">64</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15322</span> Silicon Nanostructure Based on Metal-Nanoparticle-Assisted Chemical Etching for Photovoltaic Application </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouktif">B. Bouktif</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Gaidi"> M. Gaidi</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Benrabha"> M. Benrabha</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=semiconductor%20nanostructure" title="semiconductor nanostructure">semiconductor nanostructure</a>, <a href="https://publications.waset.org/abstracts/search?q=chemical%20etching" title=" chemical etching"> chemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20property" title=" optoelectronic property"> optoelectronic property</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20surface" title=" silicon surface"> silicon surface</a> </p> <a href="https://publications.waset.org/abstracts/19048/silicon-nanostructure-based-on-metal-nanoparticle-assisted-chemical-etching-for-photovoltaic-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19048.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">388</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15321</span> Using Personalized Spiking Neural Networks, Distinct Techniques for Self-Governing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Brwa%20Abdulrahman%20Abubaker">Brwa Abdulrahman Abubaker</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recently, there has been a lot of interest in the difficult task of applying reinforcement learning to autonomous mobile robots. Conventional reinforcement learning (TRL) techniques have many drawbacks, such as lengthy computation times, intricate control frameworks, a great deal of trial and error searching, and sluggish convergence. In this paper, a modified Spiking Neural Network (SNN) is used to offer a distinct method for autonomous mobile robot learning and control in unexpected surroundings. As a learning algorithm, the suggested model combines dopamine modulation with spike-timing-dependent plasticity (STDP). In order to create more computationally efficient, biologically inspired control systems that are adaptable to changing settings, this work uses the effective and physiologically credible Izhikevich neuron model. This study is primarily focused on creating an algorithm for target tracking in the presence of obstacles. Results show that the SNN trained with three obstacles yielded an impressive 96% success rate for our proposal, with collisions happening in about 4% of the 214 simulated seconds. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=spiking%20neural%20network" title="spiking neural network">spiking neural network</a>, <a href="https://publications.waset.org/abstracts/search?q=spike-timing-dependent%20plasticity" title=" spike-timing-dependent plasticity"> spike-timing-dependent plasticity</a>, <a href="https://publications.waset.org/abstracts/search?q=dopamine%20modulation" title=" dopamine modulation"> dopamine modulation</a>, <a href="https://publications.waset.org/abstracts/search?q=reinforcement%20learning" title=" reinforcement learning"> reinforcement learning</a> </p> <a href="https://publications.waset.org/abstracts/190959/using-personalized-spiking-neural-networks-distinct-techniques-for-self-governing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/190959.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">21</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15320</span> Microwave Assisted Growth of Varied Phases and Morphologies of Vanadium Oxides Nanostructures: Structural and Optoelectronic Properties</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Issam%20Derkaoui">Issam Derkaoui</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohammed%20Khenfouch"> Mohammed Khenfouch</a>, <a href="https://publications.waset.org/abstracts/search?q=Bakang%20M.%20Mothudi"> Bakang M. Mothudi</a>, <a href="https://publications.waset.org/abstracts/search?q=Malik%20Maaza"> Malik Maaza</a>, <a href="https://publications.waset.org/abstracts/search?q=Izeddine%20Zorkani"> Izeddine Zorkani</a>, <a href="https://publications.waset.org/abstracts/search?q=Anouar%20%20Jorio"> Anouar Jorio</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Transition metal oxides nanoparticles with different morphologies have attracted a lot of attention recently owning to their distinctive geometries, and demonstrated promising electrical properties for various applications. In this paper, we discuss the time and annealing effects on the structural and electrical properties of vanadium oxides nanoparticles (VO-NPs) prepared by microwave method. In this sense, transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman Spectroscopy, Ultraviolet-visible absorbance spectra (Uv-Vis) and electrical conductivity were investigated. Hence, the annealing state and the time are two crucial parameters for the improvement of the optoelectronic properties. The use of these nanostructures is promising way for the development of technological applications especially for energy storage devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Vanadium%20oxide" title="Vanadium oxide">Vanadium oxide</a>, <a href="https://publications.waset.org/abstracts/search?q=Microwave" title=" Microwave"> Microwave</a>, <a href="https://publications.waset.org/abstracts/search?q=Electrical%20conductivity" title=" Electrical conductivity"> Electrical conductivity</a>, <a href="https://publications.waset.org/abstracts/search?q=Optoelectronic%20properties" title=" Optoelectronic properties"> Optoelectronic properties</a> </p> <a href="https://publications.waset.org/abstracts/80672/microwave-assisted-growth-of-varied-phases-and-morphologies-of-vanadium-oxides-nanostructures-structural-and-optoelectronic-properties" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80672.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">195</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15319</span> Real-Time Recognition of Dynamic Hand Postures on a Neuromorphic System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Qian%20Liu">Qian Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=Steve%20Furber"> Steve Furber</a> </p> <p class="card-text"><strong>Abstract:</strong></p> To explore how the brain may recognize objects in its general,accurate and energy-efficient manner, this paper proposes the use of a neuromorphic hardware system formed from a Dynamic Video Sensor~(DVS) silicon retina in concert with the SpiNNaker real-time Spiking Neural Network~(SNN) simulator. As a first step in the exploration on this platform a recognition system for dynamic hand postures is developed, enabling the study of the methods used in the visual pathways of the brain. Inspired by the behaviours of the primary visual cortex, Convolutional Neural Networks (CNNs) are modeled using both linear perceptrons and spiking Leaky Integrate-and-Fire (LIF) neurons. In this study's largest configuration using these approaches, a network of 74,210 neurons and 15,216,512 synapses is created and operated in real-time using 290 SpiNNaker processor cores in parallel and with 93.0% accuracy. A smaller network using only 1/10th of the resources is also created, again operating in real-time, and it is able to recognize the postures with an accuracy of around 86.4% -only 6.6% lower than the much larger system. The recognition rate of the smaller network developed on this neuromorphic system is sufficient for a successful hand posture recognition system, and demonstrates a much-improved cost to performance trade-off in its approach. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=spiking%20neural%20network%20%28SNN%29" title="spiking neural network (SNN)">spiking neural network (SNN)</a>, <a href="https://publications.waset.org/abstracts/search?q=convolutional%20neural%20network%20%28CNN%29" title=" convolutional neural network (CNN)"> convolutional neural network (CNN)</a>, <a href="https://publications.waset.org/abstracts/search?q=posture%20recognition" title=" posture recognition"> posture recognition</a>, <a href="https://publications.waset.org/abstracts/search?q=neuromorphic%20system" title=" neuromorphic system"> neuromorphic system</a> </p> <a href="https://publications.waset.org/abstracts/20330/real-time-recognition-of-dynamic-hand-postures-on-a-neuromorphic-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/20330.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">472</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15318</span> Excitation Density and Energy Dependent Relaxation Dynamics of Charge Carriers in Large Area 2D TMDCs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ashish%20Soni">Ashish Soni</a>, <a href="https://publications.waset.org/abstracts/search?q=Suman%20Kalyan%20Pal"> Suman Kalyan Pal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Transition metal dichalcogenides (TMDCs) are an emerging paradigm for the generation of advanced materials which are capable of utilizing in future device applications. In recent years TMDCs have attracted researchers for their unique band structure in monolayers. Large-area monolayers could become the most appropriate candidate for flexible and thin optoelectronic devices. For this purpose, it is crucial to understand the generation and transport of charge carriers in low dimensions. A deep understanding of photo-generated hot charges and trapped charges is essential to improve the performance of optoelectronic devices. Carrier trapping by the defect states that are introduced during the growth process of the monolayer could influence the dynamical behaviour of charge carriers. Herein, we investigated some aspects of the ultrafast evolution of the initially generated hot carriers and trapped charges in large-area monolayer WS₂ by measuring transient absorption at energies above and below the band gap energy. Our excitation density and energy-dependent measurements reveal the trapping of the initially generated charge carrier. Our results could be beneficial for the development of TMDC-based optoelectronic devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=transient%20absorption" title="transient absorption">transient absorption</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronics" title=" optoelectronics"> optoelectronics</a>, <a href="https://publications.waset.org/abstracts/search?q=2D%20materials" title=" 2D materials"> 2D materials</a>, <a href="https://publications.waset.org/abstracts/search?q=TMDCs" title=" TMDCs"> TMDCs</a>, <a href="https://publications.waset.org/abstracts/search?q=exciton" title=" exciton"> exciton</a> </p> <a href="https://publications.waset.org/abstracts/146122/excitation-density-and-energy-dependent-relaxation-dynamics-of-charge-carriers-in-large-area-2d-tmdcs" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/146122.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">68</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15317</span> Physical Properties of New Perovskite Kgex3 (X = F, Cl and Br) for Photovoltaic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouadjemia">B. Bouadjemia</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Houaria"> M. Houaria</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Haida"> S. Haida</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.%20B.%20Idriss"> Y. B. Idriss</a>, <a href="https://publications.waset.org/abstracts/search?q=A"> A</a>, <a href="https://publications.waset.org/abstracts/search?q=Akham"> Akham</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Matouguia"> M. Matouguia</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Gasmia"> A. Gasmia</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20Lantria"> T. Lantria</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Bentataa"> S. Bentataa</a> </p> <p class="card-text"><strong>Abstract:</strong></p> It have investigated the structural, optoelectronic, elastic and thermodynamic properties of KGeX₃ (X = F, Cl and Br) using the density functional theory (DFT) with generalized gradient approximation (GGA) for potential exchange correlation. The modified Becke-Johnson (mBJ-GGA) potential approximation is also used for calculating the optoelectronic properties of the material.The results show that the band structure of the metalloid halide perovskites KGeX₃ (X = F, Cl and Br) have a semiconductor behavior with direct band gap at R-R direction, the gap energy values for each compound as following: 2.83, 1.27 and 0.79eV respectively. The optical properties, such as real and imaginary parts of the dielectric functions, refractive index, reflectivity and absorption coefficient, are investigated. As results, these compounds are competent candidates for optoelectronic and photovoltaic devices in this range of the energy spectrum. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=density%20functional%20theory%20%28DFT%29" title="density functional theory (DFT)">density functional theory (DFT)</a>, <a href="https://publications.waset.org/abstracts/search?q=semiconductor%20behavior" title=" semiconductor behavior"> semiconductor behavior</a>, <a href="https://publications.waset.org/abstracts/search?q=metalloid%20halide%20perovskites" title=" metalloid halide perovskites"> metalloid halide perovskites</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20propertie%20and%20photovoltaic%20devices" title=" optical propertie and photovoltaic devices"> optical propertie and photovoltaic devices</a> </p> <a href="https://publications.waset.org/abstracts/174943/physical-properties-of-new-perovskite-kgex3-x-f-cl-and-br-for-photovoltaic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/174943.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">61</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15316</span> Optoelectronic Hardware Architecture for Recurrent Learning Algorithm in Image Processing</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdullah%20Bal">Abdullah Bal</a>, <a href="https://publications.waset.org/abstracts/search?q=Sevdenur%20Bal"> Sevdenur Bal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper purposes a new type of hardware application for training of cellular neural networks (CNN) using optical joint transform correlation (JTC) architecture for image feature extraction. CNNs require much more computation during the training stage compare to test process. Since optoelectronic hardware applications offer possibility of parallel high speed processing capability for 2D data processing applications, CNN training algorithm can be realized using Fourier optics technique. JTC employs lens and CCD cameras with laser beam that realize 2D matrix multiplication and summation in the light speed. Therefore, in the each iteration of training, JTC carries more computation burden inherently and the rest of mathematical computation realized digitally. The bipolar data is encoded by phase and summation of correlation operations is realized using multi-object input joint images. Overlapping properties of JTC are then utilized for summation of two cross-correlations which provide less computation possibility for training stage. Phase-only JTC does not require data rearrangement, electronic pre-calculation and strict system alignment. The proposed system can be incorporated simultaneously with various optical image processing or optical pattern recognition techniques just in the same optical system. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CNN%20training" title="CNN training">CNN training</a>, <a href="https://publications.waset.org/abstracts/search?q=image%20processing" title=" image processing"> image processing</a>, <a href="https://publications.waset.org/abstracts/search?q=joint%20transform%20correlation" title=" joint transform correlation"> joint transform correlation</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20hardware" title=" optoelectronic hardware"> optoelectronic hardware</a> </p> <a href="https://publications.waset.org/abstracts/35981/optoelectronic-hardware-architecture-for-recurrent-learning-algorithm-in-image-processing" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/35981.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">506</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15315</span> Electronic, Magnetic and Optic Properties in Halide Perovskites CsPbX3 (X= F, Cl, I)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouadjemi">B. Bouadjemi</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Bentata"> S. Bentata</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20Lantri"> T. Lantri</a>, <a href="https://publications.waset.org/abstracts/search?q=Souidi%20Amel"> Souidi Amel</a>, <a href="https://publications.waset.org/abstracts/search?q=W.Bensaali"> W.Bensaali</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Zitouni"> A. Zitouni</a>, <a href="https://publications.waset.org/abstracts/search?q=Z.%20Aziz"> Z. Aziz</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We performed first-principle calculations, the full-potential linearized augmented plane wave (FP-LAPW) method is used to calculate structural, optoelectronic and magnetic properties of cubic halide perovskites CsPbX3 (X= F,I). We employed for this study the GGA approach and for exchange is modeled using the modified Becke-Johnson (mBJ) potential to predicting the accurate band gap of these materials. The optical properties (namely: the real and imaginary parts of dielectric functions, optical conductivities and absorption coefficient absorption make this halide perovskites promising materials for solar cells applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=halide%20perovskites" title="halide perovskites">halide perovskites</a>, <a href="https://publications.waset.org/abstracts/search?q=mBJ" title=" mBJ"> mBJ</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title=" solar cells"> solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=FP-LAPW" title=" FP-LAPW"> FP-LAPW</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20properties" title=" optoelectronic properties"> optoelectronic properties</a>, <a href="https://publications.waset.org/abstracts/search?q=absorption%20coefficient" title=" absorption coefficient"> absorption coefficient</a> </p> <a href="https://publications.waset.org/abstracts/46567/electronic-magnetic-and-optic-properties-in-halide-perovskites-cspbx3-x-f-cl-i" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/46567.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">322</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15314</span> Computational Study on the Crystal Structure, Electronic and Optical Properties of Perovskites a2bx6 for Photovoltaic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Harmel%20Meriem">Harmel Meriem</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The optoelectronic properties and high power conversion efficiency make lead halide perovskites ideal material for solar cell applications. However, the toxic nature of lead and the instability of organic cation are the two key challenges in the emerging perovskite solar cells. To overcome these challenges, we present our study about finding potential alternatives to lead in the form of A2BX6 perovskite using the first principles DFT-based calculations. The highly accurate modified Becke Johnson (mBJ) and hybrid functional (HSE06) have been used to investigate the Main Document Click here to view linked References to optoelectronic and thermoelectric properties of A2PdBr6 (A = K, Rb, and Cs) perovskite. The results indicate that different A-cations in A2PdBr6 can significantly alter their electronic and optical properties. Calculated band structures indicate semiconducting nature, with band gap values of 1.84, 1.53, and 1.54 eV for K2PdBr6, Rb2PdBr6, and Cs2PdBr6, respectively. We find strong optical absorption in the visible region with small effective masses for A2PdBr6. The ideal band gap and optimum light absorption suggest Rb2PdBr6 and Cs2PdBr6 potential candidates for the light absorption layer in perovskite solar cells. Additionally. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=soler%20cell" title="soler cell">soler cell</a>, <a href="https://publications.waset.org/abstracts/search?q=double%20perovskite" title="double perovskite">double perovskite</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20properties" title=" optoelectronic properties"> optoelectronic properties</a>, <a href="https://publications.waset.org/abstracts/search?q=ab-inotio%20study" title=" ab-inotio study"> ab-inotio study</a> </p> <a href="https://publications.waset.org/abstracts/149815/computational-study-on-the-crystal-structure-electronic-and-optical-properties-of-perovskites-a2bx6-for-photovoltaic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/149815.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">128</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15313</span> Tunable in Phase, out of Phase and T/4 Square-Wave Pulses in Delay-Coupled Optoelectronic Oscillators</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jade%20Mart%C3%ADnez-Llin%C3%A0s">Jade Martínez-Llinàs</a>, <a href="https://publications.waset.org/abstracts/search?q=Pere%20Colet"> Pere Colet</a> </p> <p class="card-text"><strong>Abstract:</strong></p> By exploring the possible dynamical regimes in a prototypical model for mutually delay-coupled OEOs, here it is shown that two mutually coupled non-identical OEOs, besides in- and out-of-phase square-waves, can generate stable square-wave pulses synchronized at a quarter of the period (T/4) in a broad parameter region. The key point to obtain T/4 solutions is that the two OEO operate with mixed feedback, namely with negative feedback in one and positive in the other. Furthermore, the coexistence of multiple solutions provides a large degree of flexibility for tuning the frequency in the GHz range without changing any parameter. As a result the two coupled OEOs system is good candidate to be implemented for information encoding as a high-capacity memory device. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nonlinear%20optics" title="nonlinear optics">nonlinear optics</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20oscillators" title=" optoelectronic oscillators"> optoelectronic oscillators</a>, <a href="https://publications.waset.org/abstracts/search?q=square%20waves" title=" square waves"> square waves</a>, <a href="https://publications.waset.org/abstracts/search?q=synchronization" title=" synchronization"> synchronization</a> </p> <a href="https://publications.waset.org/abstracts/39791/tunable-in-phase-out-of-phase-and-t4-square-wave-pulses-in-delay-coupled-optoelectronic-oscillators" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/39791.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">370</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15312</span> Modalmetric Fiber Sensor and Its Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Zyczkowski">M. Zyczkowski</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20Markowski"> P. Markowski</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Karol"> M. Karol</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The team from IOE MUT is developing fiber optic sensors for the security systems for 15 years. The conclusions of the work indicate that these sensors are complicated. Moreover, these sensors are expensive to produce and require sophisticated signal processing methods.We present the results of the investigations of three different applications of the modalmetric sensor: • Protection of museum collections and heritage buildings, • Protection of fiber optic transmission lines, • Protection of objects of critical infrastructure. Each of the presented applications involves different requirements for the system. The results indicate that it is possible to developed a fiber optic sensor based on a single fiber. Modification of optoelectronic parts with a change of the length of the sensor and the method of reflections of propagating light at the end of the sensor allows to adjust the system to the specific application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=modalmetric%20fiber%20optic%20sensor" title="modalmetric fiber optic sensor">modalmetric fiber optic sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=security%20sensor" title=" security sensor"> security sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20parts" title=" optoelectronic parts"> optoelectronic parts</a>, <a href="https://publications.waset.org/abstracts/search?q=signal%20processing" title=" signal processing"> signal processing</a> </p> <a href="https://publications.waset.org/abstracts/9235/modalmetric-fiber-sensor-and-its-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9235.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">619</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15311</span> Diffusion Dynamics of Leech-Heart Inter-Neuron Model </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Arnab%20Mondal">Arnab Mondal</a>, <a href="https://publications.waset.org/abstracts/search?q=Sanjeev%20Kumar%20Sharma"> Sanjeev Kumar Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Ranjit%20Kumar%20Upadhyay"> Ranjit Kumar Upadhyay</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We study the spatiotemporal dynamics of a neuronal cable. The processes of one- dimensional (1D) and 2D diffusion are considered for a single variable, which is the membrane voltage, i.e., membrane voltage diffusively interacts for spatiotemporal pattern formalism. The recovery and other variables interact through the membrane voltage. A 3D Leech-Heart (LH) model is introduced to investigate the nonlinear responses of an excitable neuronal cable. The deterministic LH model shows different types of firing properties. We explore the parameter space of the uncoupled LH model and based on the bifurcation diagram, considering v_k2_ashift as a bifurcation parameter, we analyze the 1D diffusion dynamics in three regimes: bursting, regular spiking, and a quiescent state. Depending on parameters, it is shown that the diffusive system may generate regular and irregular bursting or spiking behavior. Further, it is explored a 2D diffusion acting on the membrane voltage, where different types of patterns can be observed. The results show that the LH neurons with different firing characteristics depending on the control parameters participate in a collective behavior of an information processing system that depends on the overall network. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bifurcation" title="bifurcation">bifurcation</a>, <a href="https://publications.waset.org/abstracts/search?q=pattern%20formation" title=" pattern formation"> pattern formation</a>, <a href="https://publications.waset.org/abstracts/search?q=spatio-temporal%20dynamics" title=" spatio-temporal dynamics"> spatio-temporal dynamics</a>, <a href="https://publications.waset.org/abstracts/search?q=stability%20analysis" title=" stability analysis"> stability analysis</a> </p> <a href="https://publications.waset.org/abstracts/116739/diffusion-dynamics-of-leech-heart-inter-neuron-model" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/116739.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">222</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15310</span> Tunable Optoelectronic Properties of WS₂ by Local Strain Engineering and Folding</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ahmed%20Raza%20Khan">Ahmed Raza Khan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Local-strain engineering is an exciting approach to tune the optoelectronic properties of materials and enhance the performance of devices. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDCs) are particularly well-suited for this purpose because they have high flexibility and can withstand high deformations before rupture. Wrinkles on thick TMDC layers have been reported to show the interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDCs have not been investigated, because the wrinkles can easily fall down to form folds in these ultrathin layers of TMDCs. Here, we have achieved both wrinkle and fold nano-structures simultaneously on 1-3L WS₂ using a new fabrication technique. The comparable layer dependent reduction in surface potential is observed for both folded layers and corresponding perfect pack layers due to the dominant interlayer screening effect. The strains produced from the wrinkle nanostructures considerably vary semi conductive junction properties. Thermo-ionic modelling suggests that the strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. The photo-generated carriers would further significantly lower the SBH. These results present an important advance towards controlling the optoelectronic properties of atomically thin WS₂ using strain engineering, with important implications for practical device applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=strain%20engineering" title="strain engineering">strain engineering</a>, <a href="https://publications.waset.org/abstracts/search?q=folding" title=" folding"> folding</a>, <a href="https://publications.waset.org/abstracts/search?q=WS%E2%82%82" title=" WS₂"> WS₂</a>, <a href="https://publications.waset.org/abstracts/search?q=Kelvin%20probe%20force%20microscopy" title=" Kelvin probe force microscopy"> Kelvin probe force microscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=KPFM" title=" KPFM"> KPFM</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20potential" title=" surface potential"> surface potential</a>, <a href="https://publications.waset.org/abstracts/search?q=photo%20current" title=" photo current"> photo current</a>, <a href="https://publications.waset.org/abstracts/search?q=layer%20dependence" title=" layer dependence "> layer dependence </a> </p> <a href="https://publications.waset.org/abstracts/115991/tunable-optoelectronic-properties-of-ws2-by-local-strain-engineering-and-folding" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/115991.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">107</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15309</span> Controlling Excitons Complexes in Two Dimensional MoS₂ Monolayers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Arslan%20Usman">Arslan Usman</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdul%20Sattar"> Abdul Sattar</a>, <a href="https://publications.waset.org/abstracts/search?q=Hamid%20Latif"> Hamid Latif</a>, <a href="https://publications.waset.org/abstracts/search?q=Afshan%20Ashfaq"> Afshan Ashfaq</a>, <a href="https://publications.waset.org/abstracts/search?q=Muhammad%20Rafique"> Muhammad Rafique</a>, <a href="https://publications.waset.org/abstracts/search?q=Martin%20Koch"> Martin Koch</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Two-dimensional materials have promising applications in optoelectronic and photonics; MoS₂ is the pioneer 2D material in the family of transition metal dichalcogenides. Its optical, optoelectronic, and structural properties are of practical importance along with its exciton dynamics. Exciton, along with exciton complexes, plays a vital role in realizing quantum devices. MoS₂ monolayers were synthesized using chemical vapour deposition (CVD) technique on SiO₂ and hBN substrates. Photoluminescence spectroscopy (PL) was used to identify the monolayer, which also reflects the substrate based peak broadening due to screening effects. In-plane and out of plane characteristic vibrational modes E¹₂g and A₁g, respectively, were detected in a different configuration on the substrate. The B-excitons and trions showed a dominant feature at low temperatures due to electron-phonon coupling effects, whereas their energies are separated by 100 meV. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=2D%20materials" title="2D materials">2D materials</a>, <a href="https://publications.waset.org/abstracts/search?q=photoluminescence" title=" photoluminescence"> photoluminescence</a>, <a href="https://publications.waset.org/abstracts/search?q=AFM" title=" AFM"> AFM</a>, <a href="https://publications.waset.org/abstracts/search?q=excitons" title=" excitons"> excitons</a> </p> <a href="https://publications.waset.org/abstracts/114832/controlling-excitons-complexes-in-two-dimensional-mos2-monolayers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/114832.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">145</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15308</span> Structural and Optoelectronic Properties of Monovalent Cation Doping PbS Thin Films </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Melissa%20Chavez%20Portillo">Melissa Chavez Portillo</a>, <a href="https://publications.waset.org/abstracts/search?q=Hector%20Juarez%20Santiesteban"> Hector Juarez Santiesteban</a>, <a href="https://publications.waset.org/abstracts/search?q=Mauricio%20Pacio%20Castillo"> Mauricio Pacio Castillo</a>, <a href="https://publications.waset.org/abstracts/search?q=Oscar%20Portillo%20Moreno"> Oscar Portillo Moreno</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Nanocrystalline Li-doped PbS thin films have been deposited by chemical bath deposition technique. The goal of this work is to study the modification of the optoelectronic and structural properties of Lithium incorporation. The increase of Li doping in PbS thin films leads to an increase of band gap in the range of 1.4-2.3, consequently, quantum size effect becomes pronounced in the Li-doped PbS films, which lead to a significant enhancement in the optical band gap. Doping shows influence in the film growth and results in a reduction of crystallite size from 30 to 14 nm. The refractive index was calculated and a relationship with dielectric constant was investigated. The dc conductivities of Li-doped and undoped samples were measured in the temperature range 290-340K, the conductivity increase with increase of Lithium content in the PbS films. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=doping" title="doping">doping</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20confinement" title=" quantum confinement"> quantum confinement</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20band%20gap" title=" optical band gap"> optical band gap</a>, <a href="https://publications.waset.org/abstracts/search?q=PbS" title=" PbS"> PbS</a> </p> <a href="https://publications.waset.org/abstracts/58519/structural-and-optoelectronic-properties-of-monovalent-cation-doping-pbs-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/58519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">383</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15307</span> Automatic Vertical Wicking Tester Based on Optoelectronic Techniques</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chi-Wai%20Kan">Chi-Wai Kan</a>, <a href="https://publications.waset.org/abstracts/search?q=Kam-Hong%20Chau"> Kam-Hong Chau</a>, <a href="https://publications.waset.org/abstracts/search?q=Ho-Shing%20Law"> Ho-Shing Law</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Wicking property is important for textile finishing and wears comfort. Good wicking properties can ensure uniformity and efficiency of the textiles treatment. In view of wear comfort, quick wicking fabrics facilitate the evaporation of sweat. Therefore, the wetness sensation of the skin is minimised to prevent discomfort. The testing method for vertical wicking was standardised by the American Association of Textile Chemists and Colorists (AATCC) in 2011. The traditional vertical wicking test involves human error to observe fast changing and/or unclear wicking height. This study introduces optoelectronic devices to achieve an automatic Vertical Wicking Tester (VWT) and reduce human error. The VWT can record the wicking time and wicking height of samples. By reducing the difficulties of manual judgment, the reliability of the vertical wicking experiment is highly increased. Furthermore, labour is greatly decreased by using the VWT. The automatic measurement of the VWT has optoelectronic devices to trace the liquid wicking with a simple operation procedure. The optoelectronic devices detect the colour difference between dry and wet samples. This allows high sensitivity to a difference in irradiance down to 10 μW/cm². Therefore, the VWT is capable of testing dark fabric. The VWT gives a wicking distance (wicking height) of 1 mm resolution and a wicking time of one-second resolution. Acknowledgment: This is a research project of HKRITA funded by Innovation and Technology Fund (ITF) with title “Development of an Automatic Measuring System for Vertical Wicking” (ITP/055/20TP). Author would like to thank the financial support by ITF. Any opinions, findings, conclusions or recommendations expressed in this material/event (or by members of the project team) do not reflect the views of the Government of the Hong Kong Special Administrative Region, the Innovation and Technology Commission or the Panel of Assessors for the Innovation and Technology Support Programme of the Innovation and Technology Fund and the Hong Kong Research Institute of Textiles and Apparel. Also, we would like to thank the support and sponsorship from Lai Tak Enterprises Limited, Kingis Development Limited and Wing Yue Textile Company Limited. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=AATCC%20method" title="AATCC method">AATCC method</a>, <a href="https://publications.waset.org/abstracts/search?q=comfort" title=" comfort"> comfort</a>, <a href="https://publications.waset.org/abstracts/search?q=textile%20measurement" title=" textile measurement"> textile measurement</a>, <a href="https://publications.waset.org/abstracts/search?q=wetness%20sensation" title=" wetness sensation"> wetness sensation</a> </p> <a href="https://publications.waset.org/abstracts/158895/automatic-vertical-wicking-tester-based-on-optoelectronic-techniques" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/158895.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">101</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15306</span> Design of Replication System for Computer-Generated Hologram in Optical Component Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Chih-Hung%20Chen">Chih-Hung Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Yih-Shyang%20Cheng"> Yih-Shyang Cheng</a>, <a href="https://publications.waset.org/abstracts/search?q=Yu-Hsin%20Tu"> Yu-Hsin Tu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Holographic optical elements (HOEs) have recently been one of the most suitable components in optoelectronic technology owing to the requirement of the product system with compact size. Computer-generated holography (CGH) is a well-known technology for HOEs production. In some cases, a well-designed diffractive optical element with multifunctional components is also an important issue and needed for an advanced optoelectronic system. Spatial light modulator (SLM) is one of the key components that has great capability to display CGH pattern and is widely used in various applications, such as an image projection system. As mentioned to multifunctional components, such as phase and amplitude modulation of light, high-resolution hologram with multiple-exposure procedure is also one of the suitable candidates. However, holographic recording under multiple exposures, the diffraction efficiency of the final hologram is inevitably lower than that with single exposure process. In this study, a two-step holographic recording method, including the master hologram fabrication and the replicated hologram production, will be designed. Since there exist a reduction factor M² of diffraction efficiency in multiple-exposure holograms (M multiple exposures), so it seems that single exposure would be more efficient for holograms replication. In the second step of holographic replication, a stable optical system with one-shot copying is introduced. For commercial application, one may utilize this concept of holographic copying to obtain duplications of HOEs with higher optical performance. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=holographic%20replication" title="holographic replication">holographic replication</a>, <a href="https://publications.waset.org/abstracts/search?q=holography" title=" holography"> holography</a>, <a href="https://publications.waset.org/abstracts/search?q=one-shot%20copying" title=" one-shot copying"> one-shot copying</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20element" title=" optical element"> optical element</a> </p> <a href="https://publications.waset.org/abstracts/98438/design-of-replication-system-for-computer-generated-hologram-in-optical-component-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/98438.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">156</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15305</span> Electronic and Optical Properties of Orthorhombic NdMnO3 with the Modified Becke-Johnson Potential</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouadjemi">B. Bouadjemi</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Bentata"> S. Bentata</a>, <a href="https://publications.waset.org/abstracts/search?q=T.%20Lantri"> T. Lantri</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Abbad"> A. Abbad</a>, <a href="https://publications.waset.org/abstracts/search?q=W.%20Benstaali"> W. Benstaali</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Zitouni"> A. Zitouni</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Cherid"> S. Cherid</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We investigate the electronic structure, magnetic and optical properties of the orthorhombic NdMnO3 through density-functional-theory (DFT) calculations using both generalized gradient approximation GGA and GGA+U approaches, the exchange and correlation effects are taken into account by an orbital independent modified Becke Johnson (MBJ). The predicted band gaps using the MBJ exchange approximation show a significant improvement over previous theoretical work with the common GGA and GGA+U very closer to the experimental results. Band gap dependent optical parameters like dielectric constant, index of refraction, absorption coefficient, reflectivity and conductivity are calculated and analyzed. We find that when using MBJ we have obtained better results for band gap of NdMnO3 than in the case of GGA and GGA+U. The values of band gap founded in this work by MBJ are in a very good agreement with corresponding experimental values compared to other calculations. This comprehensive theoretical study of the optoelectronic properties predicts that this material can be effectively used in optical devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DFT" title="DFT">DFT</a>, <a href="https://publications.waset.org/abstracts/search?q=optical%20properties" title=" optical properties"> optical properties</a>, <a href="https://publications.waset.org/abstracts/search?q=absorption%20coefficient" title=" absorption coefficient"> absorption coefficient</a>, <a href="https://publications.waset.org/abstracts/search?q=strong%20correlation" title=" strong correlation"> strong correlation</a>, <a href="https://publications.waset.org/abstracts/search?q=MBJ" title=" MBJ"> MBJ</a>, <a href="https://publications.waset.org/abstracts/search?q=orthorhombic%20NdMnO3" title=" orthorhombic NdMnO3"> orthorhombic NdMnO3</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic" title=" optoelectronic"> optoelectronic</a> </p> <a href="https://publications.waset.org/abstracts/15712/electronic-and-optical-properties-of-orthorhombic-ndmno3-with-the-modified-becke-johnson-potential" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/15712.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">909</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15304</span> High Photosensitivity and Broad Spectral Response of Multi-Layered Germanium Sulfide Transistors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rajesh%20Kumar%20Ulaganathan">Rajesh Kumar Ulaganathan</a>, <a href="https://publications.waset.org/abstracts/search?q=Yi-Ying%20Lu"> Yi-Ying Lu</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Jung%20Kuo"> Chia-Jung Kuo</a>, <a href="https://publications.waset.org/abstracts/search?q=Srinivasa%20Reddy%20Tamalampudi"> Srinivasa Reddy Tamalampudi</a>, <a href="https://publications.waset.org/abstracts/search?q=Raman%20Sankar"> Raman Sankar</a>, <a href="https://publications.waset.org/abstracts/search?q=Fang%20Cheng%20Chou"> Fang Cheng Chou</a>, <a href="https://publications.waset.org/abstracts/search?q=Yit-Tsong%20Chen"> Yit-Tsong Chen </a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we report the optoelectronic properties of multi-layered GeS nanosheets (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ~ 206 AW-1 under illumination of 1.5 µW/cm2 at  = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ~ 206 AW-1 is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the two-dimensional (2D) realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ~ 655 AW-1 operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ~ 4.0 × 104 %) and specific detectivity (D* ~ 2.35 × 1013 Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability with a response time of ~7 ms over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, fast response, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=germanium%20sulfide" title="germanium sulfide">germanium sulfide</a>, <a href="https://publications.waset.org/abstracts/search?q=photodetector" title=" photodetector"> photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=photoresponsivity" title=" photoresponsivity"> photoresponsivity</a>, <a href="https://publications.waset.org/abstracts/search?q=external%20quantum%20efficiency" title=" external quantum efficiency"> external quantum efficiency</a>, <a href="https://publications.waset.org/abstracts/search?q=specific%20detectivity" title=" specific detectivity "> specific detectivity </a> </p> <a href="https://publications.waset.org/abstracts/39141/high-photosensitivity-and-broad-spectral-response-of-multi-layered-germanium-sulfide-transistors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/39141.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">541</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15303</span> The Exploration of the Physical Properties of the Combinations of Selenium-Based Ternary Chalcogenides AScSe₂ (A=K, Cs) for Photovoltaic Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ayesha%20Asma">Ayesha Asma</a>, <a href="https://publications.waset.org/abstracts/search?q=Aqsa%20Arooj"> Aqsa Arooj</a> </p> <p class="card-text"><strong>Abstract:</strong></p> It is an essential need in this era of Science and Technology to investigate some unique and appropriate materials for optoelectronic applications. Here, we deliberated, for the first time, the structural, optoelectronic, mechanical, vibrational, and thermo dynamical properties of hexagonal structure selenium-based ternary chalcogenides AScSe₂ (A= K, Cs) by using Perdew-Burke-Ernzerhof Generalized-Gradient-Approximation (PBE-GGA). The lattice angles for these materials are found as α=β=90o and γ=120o. KScSe₂ optimized with lattice parameters a=b=4.3 (Å), c=7.81 (Å) whereas CsScSe₂ got relaxed at a=b=4.43 (Å) and c=8.51 (Å). However, HSE06 functional has overestimated the lattice parameters to the extent that for KScSe₂ a=b=4.92 (Å), c=7.10 (Å), and CsScSe₂ a=b=5.15 (Å), c=7.09 (Å). The energy band gap of these materials calculated via PBE-GGA and HSE06 functionals confirms their semiconducting nature. Concerning Born’s criteria, these materials are mechanically stable ones. Moreover, the temperature dependence of thermodynamic potentials and specific heat at constant volume are also determined while using the harmonic approximation. The negative values of free energy ensure their thermodynamic stability. The vibrational modes are calculated by plotting the phonon dispersion and the vibrational density of states (VDOS), where infrared (IR) and Raman spectroscopy are used to characterize the vibrational modes. The various optical parameters are examined at a smearing value of 0.5eV. These parameters unveil that these materials are good absorbers of incident light in ultra-violet (UV) regions and may be utilized in photovoltaic applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=structural" title="structural">structural</a>, <a href="https://publications.waset.org/abstracts/search?q=optimized" title=" optimized"> optimized</a>, <a href="https://publications.waset.org/abstracts/search?q=vibrational" title=" vibrational"> vibrational</a>, <a href="https://publications.waset.org/abstracts/search?q=ultraviolet" title=" ultraviolet"> ultraviolet</a> </p> <a href="https://publications.waset.org/abstracts/186437/the-exploration-of-the-physical-properties-of-the-combinations-of-selenium-based-ternary-chalcogenides-ascse2-ak-cs-for-photovoltaic-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/186437.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">42</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15302</span> Temperature Dependence of the Optoelectronic Properties of InAs(Sb)-Based LED Heterostructures</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Antonina%20Semakova">Antonina Semakova</a>, <a href="https://publications.waset.org/abstracts/search?q=Karim%20Mynbaev"> Karim Mynbaev</a>, <a href="https://publications.waset.org/abstracts/search?q=Nikolai%20Bazhenov"> Nikolai Bazhenov</a>, <a href="https://publications.waset.org/abstracts/search?q=Anton%20Chernyaev"> Anton Chernyaev</a>, <a href="https://publications.waset.org/abstracts/search?q=Sergei%20Kizhaev"> Sergei Kizhaev</a>, <a href="https://publications.waset.org/abstracts/search?q=Nikolai%20Stoyanov"> Nikolai Stoyanov</a> </p> <p class="card-text"><strong>Abstract:</strong></p> At present, heterostructures are used for fabrication of almost all types of optoelectronic devices. Our research focuses on the optoelectronic properties of InAs(Sb) solid solutions that are widely used in fabrication of light emitting diodes (LEDs) operating in middle wavelength infrared range (MWIR). This spectral range (2-6 μm) is relevant for laser diode spectroscopy of gases and molecules, for systems for the detection of explosive substances, medical applications, and for environmental monitoring. The fabrication of MWIR LEDs that operate efficiently at room temperature is mainly hindered by the predominance of non-radiative Auger recombination of charge carriers over the process of radiative recombination, which makes practical application of LEDs difficult. However, non-radiative recombination can be partly suppressed in quantum-well structures. In this regard, studies of such structures are quite topical. In this work, electroluminescence (EL) of LED heterostructures based on InAs(Sb) epitaxial films with the molar fraction of InSb ranging from 0 to 0.09 and multi quantum-well (MQW) structures was studied in the temperature range 4.2-300 K. The growth of the heterostructures was performed by metal-organic chemical vapour deposition on InAs substrates. On top of the active layer, a wide-bandgap InAsSb(Ga,P) barrier was formed. At low temperatures (4.2-100 K) stimulated emission was observed. As the temperature increased, the emission became spontaneous. The transition from stimulated emission to spontaneous one occurred at different temperatures for structures with different InSb contents in the active region. The temperature-dependent carrier lifetime, limited by radiative recombination and the most probable Auger processes (for the materials under consideration, CHHS and CHCC), were calculated within the framework of the Kane model. The effect of various recombination processes on the carrier lifetime was studied, and the dominant role of Auger processes was established. For MQW structures quantization energies for electrons, light and heavy holes were calculated. A characteristic feature of the experimental EL spectra of these structures was the presence of peaks with energy different from that of calculated optical transitions between the first quantization levels for electrons and heavy holes. The obtained results showed strong effect of the specific electronic structure of InAsSb on the energy and intensity of optical transitions in nanostructures based on this material. For the structure with MQWs in the active layer, a very weak temperature dependence of EL peak was observed at high temperatures (>150 K), which makes it attractive for fabricating temperature-resistant gas sensors operating in the middle-infrared range. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Electroluminescence" title="Electroluminescence">Electroluminescence</a>, <a href="https://publications.waset.org/abstracts/search?q=InAsSb" title=" InAsSb"> InAsSb</a>, <a href="https://publications.waset.org/abstracts/search?q=light%20emitting%20diode" title=" light emitting diode"> light emitting diode</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20wells" title=" quantum wells"> quantum wells</a> </p> <a href="https://publications.waset.org/abstracts/122314/temperature-dependence-of-the-optoelectronic-properties-of-inassb-based-led-heterostructures" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/122314.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">212</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15301</span> Electronic Device Robustness against Electrostatic Discharges</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Clara%20Oliver">Clara Oliver</a>, <a href="https://publications.waset.org/abstracts/search?q=Oibar%20Martinez"> Oibar Martinez</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper is intended to reveal the severity of electrostatic discharge (ESD) effects in electronic and optoelectronic devices by performing sensitivity tests based on Human Body Model (HBM) standard. We explain here the HBM standard in detail together with the typical failure modes associated with electrostatic discharges. In addition, a prototype of electrostatic charge generator has been designed, fabricated, and verified to stress electronic devices, which features a compact high voltage source. This prototype is inexpensive and enables one to do a battery of pre-compliance tests aimed at detecting unexpected weaknesses to static discharges at the component level. Some tests with different devices were performed to illustrate the behavior of the proposed generator. A set of discharges was applied according to the HBM standard to commercially available bipolar transistors, complementary metal-oxide-semiconductor transistors and light emitting diodes. It is observed that high current and voltage ratings in electronic devices not necessarily provide a guarantee that the device will withstand high levels of electrostatic discharges. We have also compared the result obtained by performing the sensitivity tests based on HBM with a real discharge generated by a human. For this purpose, the charge accumulated in the person is monitored, and a direct discharge against the devices is generated by touching them. Every test has been performed under controlled relative humidity conditions. It is believed that this paper can be of interest for research teams involved in the development of electronic and optoelectronic devices which need to verify the reliability of their devices in terms of robustness to electrostatic discharges. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=human%20body%20model" title="human body model">human body model</a>, <a href="https://publications.waset.org/abstracts/search?q=electrostatic%20discharge" title=" electrostatic discharge"> electrostatic discharge</a>, <a href="https://publications.waset.org/abstracts/search?q=sensitivity%20tests" title=" sensitivity tests"> sensitivity tests</a>, <a href="https://publications.waset.org/abstracts/search?q=static%20charge%20monitoring" title=" static charge monitoring"> static charge monitoring</a> </p> <a href="https://publications.waset.org/abstracts/107659/electronic-device-robustness-against-electrostatic-discharges" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/107659.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">149</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=optoelectronic%20spiking%20process&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=optoelectronic%20spiking%20process&page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=optoelectronic%20spiking%20process&page=4">4</a></li> <li class="page-item"><a class="page-link" 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