<?xml version="1.0" encoding="UTF-8"?> <article key="pdf/9999918" mdate="2014-11-01 00:00:00"> <author>Nur Syarafina Binti Othman and Tsubasa Jindo and Makato Yamada and Miho Tsuyama and Hitoshi Nakano</author> <title>Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for DischargePumped Lasers</title> <pages>1876 - 1879</pages> <year>2014</year> <volume>8</volume> <number>12</number> <journal>International Journal of Electrical and Computer Engineering</journal> <ee>https://publications.waset.org/pdf/9999918</ee> <url>https://publications.waset.org/vol/96</url> <publisher>World Academy of Science, Engineering and Technology</publisher> <abstract>A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for dischargepumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast highvoltage pulse. The switching characteristic of fasthigh voltage solid state switch has been estimated in the multistage seriesconnected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fasthigh voltage solid state switch as well as experimental results obtained are presented. </abstract> <index>Open Science Index 96, 2014</index> </article>