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</div> <div class="control"> <button class="button is-small is-link">Go</button> </div> </div> </form> </div> </div> <ol class="breathe-horizontal" start="1"> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2410.23185">arXiv:2410.23185</a> <span> [<a href="https://arxiv.org/pdf/2410.23185">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Applied Physics">physics.app-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> </div> <p class="title is-5 mathjax"> In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Zhang%2C+D">Di Zhang</a>, <a href="/search/cond-mat?searchtype=author&query=Dhall%2C+R">Rohan Dhall</a>, <a href="/search/cond-mat?searchtype=author&query=Schneider%2C+M+M">Matthew M. Schneider</a>, <a href="/search/cond-mat?searchtype=author&query=Song%2C+C">Chengyu Song</a>, <a href="/search/cond-mat?searchtype=author&query=Dou%2C+H">Hongyi Dou</a>, <a href="/search/cond-mat?searchtype=author&query=Kunwar%2C+S">Sundar Kunwar</a>, <a href="/search/cond-mat?searchtype=author&query=Yazzie%2C+N+R">Natanii R. Yazzie</a>, <a href="/search/cond-mat?searchtype=author&query=Ciston%2C+J">Jim Ciston</a>, <a href="/search/cond-mat?searchtype=author&query=Cucciniello%2C+N+G">Nicholas G. Cucciniello</a>, <a href="/search/cond-mat?searchtype=author&query=Roy%2C+P">Pinku Roy</a>, <a href="/search/cond-mat?searchtype=author&query=Pettes%2C+M+T">Michael T. Pettes</a>, <a href="/search/cond-mat?searchtype=author&query=Watt%2C+J">John Watt</a>, <a href="/search/cond-mat?searchtype=author&query=Kuo%2C+W">Winson Kuo</a>, <a href="/search/cond-mat?searchtype=author&query=Wang%2C+H">Haiyan Wang</a>, <a href="/search/cond-mat?searchtype=author&query=McCabe%2C+R+J">Rodney J. McCabe</a>, <a href="/search/cond-mat?searchtype=author&query=Chen%2C+A">Aiping Chen</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2410.23185v1-abstract-short" style="display: inline;"> Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the working mechanism of such interface-type RS devices are much less studied compared to that of the filament-type devices, which hinders the design and application of t… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2410.23185v1-abstract-full').style.display = 'inline'; document.getElementById('2410.23185v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2410.23185v1-abstract-full" style="display: none;"> Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the working mechanism of such interface-type RS devices are much less studied compared to that of the filament-type devices, which hinders the design and application of the novel interface-type devices. In this work, we fabricate a metal/TiOx/TiN/Si (001) thin film memristor by using a one-step pulsed laser deposition. In situ transmission electron microscopy (TEM) imaging and current-voltage (I-V) characteristic demonstrate that the device is switched between high resistive state (HRS) and low resistive state (LRS) in a bipolar fashion with sweeping the applied positive and negative voltages. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charged defects (such as oxygen vacancies) can migrate along the intrinsic grain boundaries of TiOx insulating phase under electric field without forming obvious conductive filaments, resulting in the modulation of Schottky barriers at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a novel perspective on RS processes and opens up new technological opportunities for fabricating ultra-low-energy nitride-based memristive devices. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2410.23185v1-abstract-full').style.display = 'none'; document.getElementById('2410.23185v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 30 October, 2024; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> October 2024. </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2408.05621">arXiv:2408.05621</a> <span> [<a href="https://arxiv.org/pdf/2408.05621">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Superconductivity">cond-mat.supr-con</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.3390/ma16237468">10.3390/ma16237468 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Yang%2C+Z">Zihao Yang</a>, <a href="/search/cond-mat?searchtype=author&query=Wei%2C+X">Xiucheng Wei</a>, <a href="/search/cond-mat?searchtype=author&query=Roy%2C+P">Pinku Roy</a>, <a href="/search/cond-mat?searchtype=author&query=Zhang%2C+D">Di Zhang</a>, <a href="/search/cond-mat?searchtype=author&query=Lu%2C+P">Ping Lu</a>, <a href="/search/cond-mat?searchtype=author&query=Dhole%2C+S">Samyak Dhole</a>, <a href="/search/cond-mat?searchtype=author&query=Wang%2C+H">Haiyan Wang</a>, <a href="/search/cond-mat?searchtype=author&query=Cucciniello%2C+N">Nicholas Cucciniello</a>, <a href="/search/cond-mat?searchtype=author&query=Patibandla%2C+N">Nag Patibandla</a>, <a href="/search/cond-mat?searchtype=author&query=Chen%2C+Z">Zhebo Chen</a>, <a href="/search/cond-mat?searchtype=author&query=Zeng%2C+H">Hao Zeng</a>, <a href="/search/cond-mat?searchtype=author&query=Jia%2C+Q">Quanxi Jia</a>, <a href="/search/cond-mat?searchtype=author&query=Zhu%2C+M">Mingwei Zhu</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2408.05621v1-abstract-short" style="display: inline;"> We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resoluti… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2408.05621v1-abstract-full').style.display = 'inline'; document.getElementById('2408.05621v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2408.05621v1-abstract-full" style="display: none;"> We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented 未-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or Hc2 (34.06 T boost in Hc2 for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2408.05621v1-abstract-full').style.display = 'none'; document.getElementById('2408.05621v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 10 August, 2024; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> August 2024. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Journal ref:</span> Materials 2023, 16, 7468 </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2312.17715">arXiv:2312.17715</a> <span> [<a href="https://arxiv.org/pdf/2312.17715">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> </div> <p class="title is-5 mathjax"> High-throughput combinatorial approach expedites the synthesis of a lead-free relaxor ferroelectric system </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/cond-mat?searchtype=author&query=Zhang%2C+D">Di Zhang</a>, <a href="/search/cond-mat?searchtype=author&query=Harmon%2C+K+J">Katherine J. Harmon</a>, <a href="/search/cond-mat?searchtype=author&query=Zachman%2C+M+J">Michael J. Zachman</a>, <a href="/search/cond-mat?searchtype=author&query=Lu%2C+P">Ping Lu</a>, <a href="/search/cond-mat?searchtype=author&query=Kim%2C+D">Doyun Kim</a>, <a href="/search/cond-mat?searchtype=author&query=Zhang%2C+Z">Zhan Zhang</a>, <a href="/search/cond-mat?searchtype=author&query=Cucciniello%2C+N">Nickolas Cucciniello</a>, <a href="/search/cond-mat?searchtype=author&query=Markland%2C+R">Reid Markland</a>, <a href="/search/cond-mat?searchtype=author&query=Ssennyimba%2C+K+W">Ken William Ssennyimba</a>, <a href="/search/cond-mat?searchtype=author&query=Zhou%2C+H">Hua Zhou</a>, <a href="/search/cond-mat?searchtype=author&query=Cao%2C+Y">Yue Cao</a>, <a href="/search/cond-mat?searchtype=author&query=Brahlek%2C+M">Matthew Brahlek</a>, <a href="/search/cond-mat?searchtype=author&query=Zheng%2C+H">Hao Zheng</a>, <a href="/search/cond-mat?searchtype=author&query=Schneider%2C+M+M">Matthew M. Schneider</a>, <a href="/search/cond-mat?searchtype=author&query=Mazza%2C+A+R">Alessandro R. Mazza</a>, <a href="/search/cond-mat?searchtype=author&query=Hughes%2C+Z">Zach Hughes</a>, <a href="/search/cond-mat?searchtype=author&query=Somodi%2C+C">Chase Somodi</a>, <a href="/search/cond-mat?searchtype=author&query=Freiman%2C+B">Benjamin Freiman</a>, <a href="/search/cond-mat?searchtype=author&query=Pooley%2C+S">Sarah Pooley</a>, <a href="/search/cond-mat?searchtype=author&query=Kunwar%2C+S">Sundar Kunwar</a>, <a href="/search/cond-mat?searchtype=author&query=Roy%2C+P">Pinku Roy</a>, <a href="/search/cond-mat?searchtype=author&query=Tu%2C+Q">Qing Tu</a>, <a href="/search/cond-mat?searchtype=author&query=McCabe%2C+R+J">Rodney J. McCabe</a>, <a href="/search/cond-mat?searchtype=author&query=Chen%2C+A">Aiping Chen</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2312.17715v1-abstract-short" style="display: inline;"> Developing novel lead-free ferroelectric materials is crucial for next-generation microelectronic technologies that are energy efficient and environment friendly. However, materials discovery and property optimization are typically time-consuming due to the limited throughput of traditional synthesis methods. In this work, we use a high-throughput combinatorial synthesis approach to fabricate lead… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2312.17715v1-abstract-full').style.display = 'inline'; document.getElementById('2312.17715v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2312.17715v1-abstract-full" style="display: none;"> Developing novel lead-free ferroelectric materials is crucial for next-generation microelectronic technologies that are energy efficient and environment friendly. However, materials discovery and property optimization are typically time-consuming due to the limited throughput of traditional synthesis methods. In this work, we use a high-throughput combinatorial synthesis approach to fabricate lead-free ferroelectric superlattices and solid solutions of (Ba0.7Ca0.3)TiO3 (BCT) and Ba(Zr0.2Ti0.8)O3 (BZT) phases with continuous variation of composition and layer thickness. High-resolution X-ray diffraction (XRD) and analytical scanning transmission electron microscopy (STEM) demonstrate high film quality and well-controlled compositional gradients. Ferroelectric and dielectric property measurements identify the optimal property point achieved at the morphotropic phase boundary (MPB) with a composition of 48BZT-52BCT. Displacement vector maps reveal that ferroelectric domain sizes are tunable by varying {BCT-BZT}N superlattice geometry. This high-throughput synthesis approach can be applied to many other material systems to expedite new materials discovery and properties optimization, allowing for the exploration of a large area of phase space within a single growth. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2312.17715v1-abstract-full').style.display = 'none'; document.getElementById('2312.17715v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 29 December, 2023; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> December 2023. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">submitted</span> </p> </li> </ol> <div class="is-hidden-tablet">  <span class="help" style="display: inline-block;"><a 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