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InGaAs</title> <meta name="description" content="Search results for: InGaAs"> <meta name="keywords" content="InGaAs"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none navbar-toggler ml-auto" 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class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="InGaAs"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 8</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: InGaAs</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">8</span> Fabrication of InGaAs P-I-N Micro-Photodiode Sensor Array</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jyun-Hao%20Liao">Jyun-Hao Liao</a>, <a href="https://publications.waset.org/abstracts/search?q=Chien-Ju%20Chen"> Chien-Ju Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Jui%20Yu"> Chia-Jui Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=Meng%20Chyi%20Wu"> Meng Chyi Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Ching%20Wu"> Chia-Ching Wu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this letter, we reported the fabrication of InGaAs micro-photodiode sensor array with the rapid thermal diffusion (RTD) technique. The spin-on dopant source Zn was used to form the p-type region in InP layer. Through the RTD technique, the InP/InGaAs heterostructure was formed. We improved our fabrication on the p-i-n photodiode to micro size which pixel is 7.8um, and the pitch is 12.8um. The proper SiNx was deposited to form the passivation layer. The leakage current of single pixel decrease to 3.3pA at -5V, and 35fA at -10mV. The leakage current densities of each voltage are 21uA/cm² at -5V and 0.223uA/cm² at -10mV. As we focus on the wavelength from 0.9um to 1.7um, the optimized Si/Al₂O₃ bilayers are deposited to form the AR-coating. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=InGaAs" title="InGaAs">InGaAs</a>, <a href="https://publications.waset.org/abstracts/search?q=micro%20sensor%20array" title=" micro sensor array"> micro sensor array</a>, <a href="https://publications.waset.org/abstracts/search?q=p-i-n%20photodiode" title=" p-i-n photodiode"> p-i-n photodiode</a>, <a href="https://publications.waset.org/abstracts/search?q=rapid%20thermal%20diffusion" title=" rapid thermal diffusion"> rapid thermal diffusion</a>, <a href="https://publications.waset.org/abstracts/search?q=Zn%20diffusion" title=" Zn diffusion"> Zn diffusion</a> </p> <a href="https://publications.waset.org/abstracts/73769/fabrication-of-ingaas-p-i-n-micro-photodiode-sensor-array" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73769.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">318</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">7</span> Analytical Terahertz Characterization of In0.53Ga0.47As Transistors and Homogenous Diodes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelmadjid%20Mammeri">Abdelmadjid Mammeri</a>, <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Mahi"> Fatima Zohra Mahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Luca%20Varani"> Luca Varani</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Marinchoi"> H. Marinchoi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We propose an analytical model for the admittance and the noise calculations of the InGaAs transistor and diode. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent of the small-signal admittance response is determined by the total currents and the potentials matrix relation between the gate and the drain terminals. The noise is evaluated by using the real part of the transistor/diode admittance under a small-signal perturbation. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; can give significant information about the noise frequency dependence in the InGaAs transistor and diode. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20transistors" title="InGaAs transistors">InGaAs transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode" title=" InGaAs diode"> InGaAs diode</a>, <a href="https://publications.waset.org/abstracts/search?q=admittance" title=" admittance"> admittance</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20peaks" title=" resonant peaks"> resonant peaks</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20waves" title=" plasma waves"> plasma waves</a>, <a href="https://publications.waset.org/abstracts/search?q=analytical%20model" title=" analytical model"> analytical model</a> </p> <a href="https://publications.waset.org/abstracts/45170/analytical-terahertz-characterization-of-in053ga047as-transistors-and-homogenous-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45170.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">315</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">6</span> Room Temperature Lasing from InGaAs Quantum Well Nanowires on Silicon-On-Insulator Substrates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Balthazar%20Temu">Balthazar Temu</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhao%20Yan"> Zhao Yan</a>, <a href="https://publications.waset.org/abstracts/search?q=Bogdan-Petrin%20Ratiu"> Bogdan-Petrin Ratiu</a>, <a href="https://publications.waset.org/abstracts/search?q=Sang%20Soon%20Oh"> Sang Soon Oh</a>, <a href="https://publications.waset.org/abstracts/search?q=Qiang%20Li"> Qiang Li</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Quantum confinement can be used to increase efficiency and control the emitted spectra in lasers and LEDs. In semiconductor nanowires, quantum confinement can be achieved in the axial direction by stacking multiple quantum disks or in the radial direction by forming a core-shell structure. In this work we demonstrate room temperature lasing in topological photonic crystal nanowire array lasers by using the InGaAs radial quantum well as the gain material. The nanowires with the GaAs/ InGaAs/ InGaP quantum well structure are arranged in a deformed honeycomb lattice, forming a photonic crystal surface emitting laser (PCSEL) . Under optical pumping we show that the PCSEL lase at the wavelength of 1001 nm (undeformed pattern) and 966 nm (stretched pattern), with the lasing threshold of 103 µJ〖/cm 〗^2. We compare the lasing wavelengths from devices with three different nanowire diameters for undeformed compressed and stretched devices, showing that the lasing wavelength increases as the nanowire diameter increases. The impact of deforming the honeycomb pattern is studied, where it was found out that the lasing wavelengths of undeformed devices are always larger than the corresponding stretched or compressed devices with the same nanowire diameter. Using photoluminescence results and numerical simulations on the field profile and the quality factors of the devices, we establish that the lasing of the device is from the radial quantum well structure. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=honeycomb%20PCSEL" title="honeycomb PCSEL">honeycomb PCSEL</a>, <a href="https://publications.waset.org/abstracts/search?q=nanowire%20laser" title=" nanowire laser"> nanowire laser</a>, <a href="https://publications.waset.org/abstracts/search?q=photonic%20crystal%20laser" title=" photonic crystal laser"> photonic crystal laser</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20well%20laser" title=" quantum well laser"> quantum well laser</a> </p> <a href="https://publications.waset.org/abstracts/193549/room-temperature-lasing-from-ingaas-quantum-well-nanowires-on-silicon-on-insulator-substrates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/193549.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">11</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5</span> Investigation of the Effects of Gamma Radiation on the Electrically Active Defects in InAs/InGaAs Quantum Dots Laser Structures Grown by Molecular Beam Epitaxy on GaAs Substrates Using Deep Level Transient Spectroscopy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Al%20Huwayz">M. Al Huwayz</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Salhi"> A. Salhi</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Alhassan"> S. Alhassan</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Alotaibi"> S. Alotaibi</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Almalki"> A. Almalki</a>, <a href="https://publications.waset.org/abstracts/search?q=M.Almunyif"> M.Almunyif</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Alhassni"> A. Alhassni</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Henini"> M. Henini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recently, there has been much research carried out to investigate quantum dots (QDs) lasers with the aim to increase the gain of quantum well lasers. However, one of the difficulties with these structures is that electrically active defects can lead to serious issues in the performance of these devices. It is therefore essential to fully understand the types of defects introduced during the growth and/or the fabrication process. In this study, the effects of Gamma radiation on the electrically active defects in p-i-n InAs/InGaAsQDs laser structures grown by Molecular Beam Epitaxy (MBE) technique on GaAs substrates were investigated. Deep Level Transient Spectroscopy (DLTS), current-voltage (I-V), and capacitance-voltage (C-V) measurements were performed to explore these effects on the electrical properties of these QDs lasers. I-V measurements showed that as-grown sample had better electrical properties than the irradiated sample. However, DLTS and Laplace DLTS measurements at different reverse biases revealed that the defects in the-region of the p-i-n structures were decreased in the irradiated sample. In both samples, a trap with an activation energy of ~ 0.21 eV was assigned to the well-known defect M1 in GaAs layers <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=quantum%20dots%20laser%20structures" title="quantum dots laser structures">quantum dots laser structures</a>, <a href="https://publications.waset.org/abstracts/search?q=gamma%20radiation" title=" gamma radiation"> gamma radiation</a>, <a href="https://publications.waset.org/abstracts/search?q=DLTS" title=" DLTS"> DLTS</a>, <a href="https://publications.waset.org/abstracts/search?q=defects" title=" defects"> defects</a>, <a href="https://publications.waset.org/abstracts/search?q=nAs%2FIngaAs" title=" nAs/IngaAs"> nAs/IngaAs</a> </p> <a href="https://publications.waset.org/abstracts/141942/investigation-of-the-effects-of-gamma-radiation-on-the-electrically-active-defects-in-inasingaas-quantum-dots-laser-structures-grown-by-molecular-beam-epitaxy-on-gaas-substrates-using-deep-level-transient-spectroscopy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/141942.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">187</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4</span> Comparison of Artificial Neural Networks and Statistical Classifiers in Olive Sorting Using Near-Infrared Spectroscopy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=I%CC%87smail%20Kavd%C4%B1r">İsmail Kavdır</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Burak%20B%C3%BCy%C3%BCkcan"> M. Burak Büyükcan</a>, <a href="https://publications.waset.org/abstracts/search?q=Ferhat%20Kurtulmu%C5%9F"> Ferhat Kurtulmuş</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Table olive is a valuable product especially in Mediterranean countries. It is usually consumed after some fermentation process. Defects happened naturally or as a result of an impact while olives are still fresh may become more distinct after processing period. Defected olives are not desired both in table olive and olive oil industries as it will affect the final product quality and reduce market prices considerably. Therefore it is critical to sort table olives before processing or even after processing according to their quality and surface defects. However, doing manual sorting has many drawbacks such as high expenses, subjectivity, tediousness and inconsistency. Quality criterions for green olives were accepted as color and free of mechanical defects, wrinkling, surface blemishes and rotting. In this study, it was aimed to classify fresh table olives using different classifiers and NIR spectroscopy readings and also to compare the classifiers. For this purpose, green (Ayvalik variety) olives were classified based on their surface feature properties such as defect-free, with bruised defect and with fly defect using FT-NIR spectroscopy and classification algorithms such as artificial neural networks, ident and cluster. Bruker multi-purpose analyzer (MPA) FT-NIR spectrometer (Bruker Optik, GmbH, Ettlingen Germany) was used for spectral measurements. The spectrometer was equipped with InGaAs detectors (TE-InGaAs internal for reflectance and RT-InGaAs external for transmittance) and a 20-watt high intensity tungsten–halogen NIR light source. Reflectance measurements were performed with a fiber optic probe (type IN 261) which covered the wavelengths between 780–2500 nm, while transmittance measurements were performed between 800 and 1725 nm. Thirty-two scans were acquired for each reflectance spectrum in about 15.32 s while 128 scans were obtained for transmittance in about 62 s. Resolution was 8 cm⁻¹ for both spectral measurement modes. Instrument control was done using OPUS software (Bruker Optik, GmbH, Ettlingen Germany). Classification applications were performed using three classifiers; Backpropagation Neural Networks, ident and cluster classification algorithms. For these classification applications, Neural Network tool box in Matlab, ident and cluster modules in OPUS software were used. Classifications were performed considering different scenarios; two quality conditions at once (good vs bruised, good vs fly defect) and three quality conditions at once (good, bruised and fly defect). Two spectrometer readings were used in classification applications; reflectance and transmittance. Classification results obtained using artificial neural networks algorithm in discriminating good olives from bruised olives, from olives with fly defect and from the olive group including both bruised and fly defected olives with success rates respectively changing between 97 and 99%, 61 and 94% and between 58.67 and 92%. On the other hand, classification results obtained for discriminating good olives from bruised ones and also for discriminating good olives from fly defected olives using the ident method ranged between 75-97.5% and 32.5-57.5%, respectfully; results obtained for the same classification applications using the cluster method ranged between 52.5-97.5% and between 22.5-57.5%. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=artificial%20neural%20networks" title="artificial neural networks">artificial neural networks</a>, <a href="https://publications.waset.org/abstracts/search?q=statistical%20classifiers" title=" statistical classifiers"> statistical classifiers</a>, <a href="https://publications.waset.org/abstracts/search?q=NIR%20spectroscopy" title=" NIR spectroscopy"> NIR spectroscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=reflectance" title=" reflectance"> reflectance</a>, <a href="https://publications.waset.org/abstracts/search?q=transmittance" title=" transmittance"> transmittance</a> </p> <a href="https://publications.waset.org/abstracts/74775/comparison-of-artificial-neural-networks-and-statistical-classifiers-in-olive-sorting-using-near-infrared-spectroscopy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/74775.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">246</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3</span> Analytical Response Characterization of High Mobility Transistor Channels</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=F.%20Z.%20Mahi">F. Z. Mahi</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Marinchio"> H. Marinchio</a>, <a href="https://publications.waset.org/abstracts/search?q=C.%20Palermo"> C. Palermo</a>, <a href="https://publications.waset.org/abstracts/search?q=L.%20Varani"> L. Varani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We propose an analytical approach for the admittance response calculation of the high mobility InGaAs channel transistors. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The total currents and the potentials matrix relation between the gate and the drain terminals determine the frequency-dependent small-signal admittance response. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand, to control the appearance of plasma resonances, and on the other hand, can give significant information about the admittance phase frequency dependence. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=small-signal%20admittance" title="small-signal admittance">small-signal admittance</a>, <a href="https://publications.waset.org/abstracts/search?q=Poisson%20equation" title=" Poisson equation"> Poisson equation</a>, <a href="https://publications.waset.org/abstracts/search?q=currents%20and%20potentials%20matrix" title=" currents and potentials matrix"> currents and potentials matrix</a>, <a href="https://publications.waset.org/abstracts/search?q=the%20drain%20and%20the%20gate%20terminals" title=" the drain and the gate terminals"> the drain and the gate terminals</a>, <a href="https://publications.waset.org/abstracts/search?q=analytical%20model" title=" analytical model"> analytical model</a> </p> <a href="https://publications.waset.org/abstracts/35861/analytical-response-characterization-of-high-mobility-transistor-channels" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/35861.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">540</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">2</span> High Photosensitivity and Broad Spectral Response of Multi-Layered Germanium Sulfide Transistors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rajesh%20Kumar%20Ulaganathan">Rajesh Kumar Ulaganathan</a>, <a href="https://publications.waset.org/abstracts/search?q=Yi-Ying%20Lu"> Yi-Ying Lu</a>, <a href="https://publications.waset.org/abstracts/search?q=Chia-Jung%20Kuo"> Chia-Jung Kuo</a>, <a href="https://publications.waset.org/abstracts/search?q=Srinivasa%20Reddy%20Tamalampudi"> Srinivasa Reddy Tamalampudi</a>, <a href="https://publications.waset.org/abstracts/search?q=Raman%20Sankar"> Raman Sankar</a>, <a href="https://publications.waset.org/abstracts/search?q=Fang%20Cheng%20Chou"> Fang Cheng Chou</a>, <a href="https://publications.waset.org/abstracts/search?q=Yit-Tsong%20Chen"> Yit-Tsong Chen </a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we report the optoelectronic properties of multi-layered GeS nanosheets (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ~ 206 AW-1 under illumination of 1.5 µW/cm2 at  = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ~ 206 AW-1 is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the two-dimensional (2D) realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ~ 655 AW-1 operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ~ 4.0 × 104 %) and specific detectivity (D* ~ 2.35 × 1013 Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability with a response time of ~7 ms over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, fast response, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=germanium%20sulfide" title="germanium sulfide">germanium sulfide</a>, <a href="https://publications.waset.org/abstracts/search?q=photodetector" title=" photodetector"> photodetector</a>, <a href="https://publications.waset.org/abstracts/search?q=photoresponsivity" title=" photoresponsivity"> photoresponsivity</a>, <a href="https://publications.waset.org/abstracts/search?q=external%20quantum%20efficiency" title=" external quantum efficiency"> external quantum efficiency</a>, <a href="https://publications.waset.org/abstracts/search?q=specific%20detectivity" title=" specific detectivity "> specific detectivity </a> </p> <a href="https://publications.waset.org/abstracts/39141/high-photosensitivity-and-broad-spectral-response-of-multi-layered-germanium-sulfide-transistors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/39141.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">541</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1</span> Designing Electrically Pumped Photonic Crystal Surface Emitting Lasers Based on a Honeycomb Nanowire Pattern</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Balthazar%20Temu">Balthazar Temu</a>, <a href="https://publications.waset.org/abstracts/search?q=Zhao%20Yan"> Zhao Yan</a>, <a href="https://publications.waset.org/abstracts/search?q=Bogdan-Petrin%20Ratiu"> Bogdan-Petrin Ratiu</a>, <a href="https://publications.waset.org/abstracts/search?q=Sang%20Soon%20Oh"> Sang Soon Oh</a>, <a href="https://publications.waset.org/abstracts/search?q=Qiang%20Li"> Qiang Li</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Photonic crystal surface emitting lasers (PCSELs) has recently become an area of active research because of the advantages these lasers have over the edge emitting lasers and vertical cavity surface emitting lasers (VCSELs). PCSELs can emit laser beams with high power (from the order of few milliwatts to Watts or even tens of Watts) which scales with the emission area while maintaining single mode operation even at large emission areas. Most PCSELs reported in the literature are air-hole based, with only few demonstrations of nanowire based PCSELs. We previously reported an optically pumped, nanowire based PCSEL operating in the O band by using the honeycomb lattice. The nanowire based PCSELs have the advantage of being able to grow on silicon platform without threading dislocations. It is desirable to extend their operating wavelength to C band to open more applications including eye-safe sensing, lidar and long haul optical communications. In this work we first analyze how the lattice constant , nanowire diameter, nanowire height and side length of the hexagon in the honeycomb pattern can be changed to increase the operating wavelength of the honeycomb based PCSELs to the C band. Then as an attempt to make our device electrically pumped, we present the finite-difference time-domain (FDTD) simulation results with metals on the nanowire. The results for different metals on the nanowire are presented in order to choose the metal which gives the device with the best quality factor. The metals under consideration are those which form good ohmic contact with p-type doped InGaAs with low contact resistivity and decent sticking coefficient to the semiconductor. Such metals include Tungsten, Titanium, Palladium and Platinum. Using the chosen metal we demonstrate the impact of thickness of the metal for a given nanowire height on the quality factor of the device. We also investigate how the height of the nanowire affects the quality factor for a fixed thickness of the metal. Finally, the main steps in making the practical device are discussed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=designing%20nanowire%20PCSEL" title="designing nanowire PCSEL">designing nanowire PCSEL</a>, <a href="https://publications.waset.org/abstracts/search?q=designing%20PCSEL%20on%20silicon%20substrates" title=" designing PCSEL on silicon substrates"> designing PCSEL on silicon substrates</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20threshold%20nanowire%20laser" title=" low threshold nanowire laser"> low threshold nanowire laser</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation%20of%20photonic%20crystal%20lasers." title=" simulation of photonic crystal lasers."> simulation of photonic crystal lasers.</a> </p> <a href="https://publications.waset.org/abstracts/193555/designing-electrically-pumped-photonic-crystal-surface-emitting-lasers-based-on-a-honeycomb-nanowire-pattern" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/193555.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">16</span> </span> </div> </div> </div> </main> <footer> <div id="infolinks" class="pt-3 pb-2"> <div class="container"> <div style="background-color:#f5f5f5;" class="p-3"> <div class="row"> <div class="col-md-2"> <ul class="list-unstyled"> About <li><a href="https://waset.org/page/support">About Us</a></li> <li><a href="https://waset.org/page/support#legal-information">Legal</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/WASET-16th-foundational-anniversary.pdf">WASET celebrates its 16th foundational 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