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chemical etching</title> <meta name="description" content="Search results for: plasma chemical etching"> <meta name="keywords" content="plasma chemical etching"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="plasma chemical etching"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 5412</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: plasma chemical etching</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5412</span> Silicon Carbide (SiC) Crystallization Obtained as a Side Effect of SF6 Etching Process</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=N.%20K.%20A.%20M.%20Galv%C3%A3o">N. K. A. M. Galvão</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Godoy%20Jr."> A. Godoy Jr.</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20L.%20J.%20Pereira"> A. L. J. Pereira</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20V.%20Martins"> G. V. Martins</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20S.%20Pessoa"> R. S. Pessoa</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20S.%20Maciel"> H. S. Maciel</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20A.%20Fraga"> M. A. Fraga</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Silicon carbide (SiC) is a wide band-gap semiconductor material with very attractive properties, such as high breakdown voltage, chemical inertness, and high thermal and electrical stability, which makes it a promising candidate for several applications, including microelectromechanical systems (MEMS) and electronic devices. In MEMS manufacturing, the etching process is an important step. It has been proved that wet etching of SiC is not feasible due to its high bond strength and high chemical inertness. In view of this difficulty, the plasma etching technique has been applied with paramount success. However, in most of these studies, only the determination of the etching rate and/or morphological characterization of SiC, as well as the analysis of the reactive ions present in the plasma, are lowly explored. There is a lack of results in the literature on the chemical and structural properties of SiC after the etching process [4]. In this work, we investigated the etching process of sputtered amorphous SiC thin films on Si substrates in a reactive ion etching (RIE) system using sulfur hexafluoride (SF6) gas under different RF power. The results of the chemical and structural analyses of the etched films revealed that, for all conditions, a SiC crystallization occurred, in addition to fluoride contamination. In conclusion, we observed that SiC crystallization is a side effect promoted by structural, morphological and chemical changes caused by RIE SF6 etching process. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=plasma%20etching" title="plasma etching">plasma etching</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20deposition" title=" plasma deposition"> plasma deposition</a>, <a href="https://publications.waset.org/abstracts/search?q=Silicon%20Carbide" title=" Silicon Carbide"> Silicon Carbide</a>, <a href="https://publications.waset.org/abstracts/search?q=microelectromechanical%20systems" title=" microelectromechanical systems"> microelectromechanical systems</a> </p> <a href="https://publications.waset.org/abstracts/158558/silicon-carbide-sic-crystallization-obtained-as-a-side-effect-of-sf6-etching-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/158558.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">75</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5411</span> A Study on the Etching Characteristics of High aspect ratio Oxide Etching Using C4F6 Plasma in Inductively Coupled Plasma with Low Frequency Bias</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=ByungJun%20Woo">ByungJun Woo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, high-aspect-ratio (HAR) oxide etching characteristics in inductively coupled plasma were investigated using low frequency (2 MHz) bias power with C4F6 gas. An experiment was conducted using CF4/C4F6/He as the mixed gas. A 100 nm (etch area)/500 nm (mask area) line patterns were used, and the etch cross-section and etch selectivity of the amorphous carbon layer thin film were derived using a scanning electron microscope. Ion density was extracted using a double Langmuir probe, and CFx and F neutral species were observed via optical emission spectroscopy. Based on these results, the possibility for HAR oxide etching using C4F6 gas chemistry was suggested in this work. These etching results also indicate that the use of C4F6 gas can significantly contribute to the development of next-generation HAR oxide etching. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=plasma" title="plasma">plasma</a>, <a href="https://publications.waset.org/abstracts/search?q=etching" title=" etching"> etching</a>, <a href="https://publications.waset.org/abstracts/search?q=C4F6" title=" C4F6"> C4F6</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20aspect%20ratio" title=" high aspect ratio"> high aspect ratio</a>, <a href="https://publications.waset.org/abstracts/search?q=inductively%20coupled%20plasma" title=" inductively coupled plasma"> inductively coupled plasma</a> </p> <a href="https://publications.waset.org/abstracts/183420/a-study-on-the-etching-characteristics-of-high-aspect-ratio-oxide-etching-using-c4f6-plasma-in-inductively-coupled-plasma-with-low-frequency-bias" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/183420.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">73</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5410</span> Cyclic Etching Process Using Inductively Coupled Plasma for Polycrystalline Diamond on AlGaN/GaN Heterostructure</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Haolun%20Sun">Haolun Sun</a>, <a href="https://publications.waset.org/abstracts/search?q=Ping%20Wang"> Ping Wang</a>, <a href="https://publications.waset.org/abstracts/search?q=Mei%20Wu"> Mei Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Meng%20Zhang"> Meng Zhang</a>, <a href="https://publications.waset.org/abstracts/search?q=Bin%20Hou"> Bin Hou</a>, <a href="https://publications.waset.org/abstracts/search?q=Ling%20Yang"> Ling Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=Xiaohua%20Ma"> Xiaohua Ma</a>, <a href="https://publications.waset.org/abstracts/search?q=Yue%20Hao"> Yue Hao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Gallium nitride (GaN) is an attractive material for next-generation power devices. It is noted that the performance of GaN-based high electron mobility transistors (HEMTs) is always limited by the self-heating effect. In response to the problem, integrating devices with polycrystalline diamond (PCD) has been demonstrated to be an efficient way to alleviate the self-heating issue of the GaN-based HEMTs. Among all the heat-spreading schemes, using PCD to cap the epitaxial layer before the HEMTs process is one of the most effective schemes. Now, the mainstream method of fabricating the PCD-capped HEMTs is to deposit the diamond heat-spreading layer on the AlGaN surface, which is covered by a thin nucleation dielectric/passivation layer. To achieve the pattern etching of the diamond heat spreader and device preparation, we selected SiN as the hard mask for diamond etching, which was deposited by plasma-enhanced chemical vapor deposition (PECVD). The conventional diamond etching method first uses F-based etching to remove the SiN from the special window region, followed by using O₂/Ar plasma to etch the diamond. However, the results of the scanning electron microscope (SEM) and focused ion beam microscopy (FIB) show that there are lots of diamond pillars on the etched diamond surface. Through our study, we found that it was caused by the high roughness of the diamond surface and the existence of the overlap between the diamond grains, which makes the etching of the SiN hard mask insufficient and leaves micro-masks on the diamond surface. Thus, a cyclic etching method was proposed to solve the problem of the residual SiN, which was left in the F-based etching. We used F-based etching during the first step to remove the SiN hard mask in the specific region; then, the O₂/Ar plasma was introduced to etch the diamond in the corresponding region. These two etching steps were set as one cycle. After the first cycle, we further used cyclic etching to clear the pillars, in which the F-based etching was used to remove the residual SiN, and then the O₂/Ar plasma was used to etch the diamond. Whether to take the next cyclic etching depends on whether there are still SiN micro-masks left. By using this method, we eventually achieved the self-terminated etching of the diamond and the smooth surface after the etching. These results demonstrate that the cyclic etching method can be successfully applied to the integrated preparation of polycrystalline diamond thin films and GaN HEMTs. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=AlGaN%2FGaN%20heterojunction" title="AlGaN/GaN heterojunction">AlGaN/GaN heterojunction</a>, <a href="https://publications.waset.org/abstracts/search?q=O%E2%82%82%2FAr%20plasma" title=" O₂/Ar plasma"> O₂/Ar plasma</a>, <a href="https://publications.waset.org/abstracts/search?q=cyclic%20etching" title=" cyclic etching"> cyclic etching</a>, <a href="https://publications.waset.org/abstracts/search?q=polycrystalline%20diamond" title=" polycrystalline diamond"> polycrystalline diamond</a> </p> <a href="https://publications.waset.org/abstracts/159880/cyclic-etching-process-using-inductively-coupled-plasma-for-polycrystalline-diamond-on-algangan-heterostructure" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/159880.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">134</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5409</span> Silicon Nanostructure Based on Metal-Nanoparticle-Assisted Chemical Etching for Photovoltaic Application </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouktif">B. Bouktif</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Gaidi"> M. Gaidi</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Benrabha"> M. Benrabha</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=semiconductor%20nanostructure" title="semiconductor nanostructure">semiconductor nanostructure</a>, <a href="https://publications.waset.org/abstracts/search?q=chemical%20etching" title=" chemical etching"> chemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=optoelectronic%20property" title=" optoelectronic property"> optoelectronic property</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20surface" title=" silicon surface"> silicon surface</a> </p> <a href="https://publications.waset.org/abstracts/19048/silicon-nanostructure-based-on-metal-nanoparticle-assisted-chemical-etching-for-photovoltaic-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19048.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">386</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5408</span> Nanoprofiling of GaAs Surface in a Combined Low-Temperature Plasma for Microwave Devices</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Victor%20S.%20Klimin">Victor S. Klimin</a>, <a href="https://publications.waset.org/abstracts/search?q=Alexey%20A.%20Rezvan"> Alexey A. Rezvan</a>, <a href="https://publications.waset.org/abstracts/search?q=Maxim%20S.%20Solodovnik"> Maxim S. Solodovnik</a>, <a href="https://publications.waset.org/abstracts/search?q=Oleg%20A.%20Ageev"> Oleg A. Ageev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, the problems of existing methods of profiling and surface modification of nanoscale arsenide-gallium structures are analyzed. The use of a combination of methods of local anodic oxidation and plasma chemical etching to solve this problem is considered. The main features that make this technology one of the promising areas of modification and profiling of near-surface layers of solids are demonstrated. In this paper, we studied the effect of formation stress and etching time on the geometrical parameters of the etched layer and the roughness of the etched surface. Experimental dependences of the thickness of the etched layer on the time and stress of formation were obtained. The surface analysis was carried out using atomic force microscopy methods, the corresponding profilograms were constructed from the obtained images, and the roughness of the etched surface was studied accordingly. It was shown that at high formation voltage, the depth of the etched surface increased, this is due to an increase in the number of active particles (oxygen ions and hydroxyl groups) formed as a result of the decomposition of water molecules in an electric field, during the formation of oxide nanostructures on the surface of gallium arsenide. Oxide layers were used as negative masks for subsequent plasma chemical etching by the STE ICPe68 unit. BCl₃ was chosen as the chlorine-containing gas, which differs from analogs in some parameters for the effect of etching of nanostructures based on gallium arsenide in the low-temperature plasma. The gas mixture of reaction chamber consisted of a buffer gas NAr = 100 cm³/min and a chlorine-containing gas NBCl₃ = 15 cm³/min at a pressure P = 2 Pa. The influence of these methods modes, which are formation voltage and etching time, on the roughness and geometric parameters, and corresponding dependences are demonstrated. Probe nanotechnology was used for surface analysis. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nanostructures" title="nanostructures">nanostructures</a>, <a href="https://publications.waset.org/abstracts/search?q=GaAs" title=" GaAs"> GaAs</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching" title=" plasma chemical etching"> plasma chemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=modification%20structures" title=" modification structures"> modification structures</a> </p> <a href="https://publications.waset.org/abstracts/106770/nanoprofiling-of-gaas-surface-in-a-combined-low-temperature-plasma-for-microwave-devices" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/106770.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">145</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5407</span> Effects of Plasma Treatment on Seed Germination</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yong%20Ho%20Jeon">Yong Ho Jeon</a>, <a href="https://publications.waset.org/abstracts/search?q=Youn%20Mi%20Lee"> Youn Mi Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Yoon%20Lee"> Yong Yoon Lee</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Effects of cold plasma treatment on various plant seed germination were studied. The seeds of hot pepper, cucumber, tomato and arabidopsis were exposed to plasma and the plasma was generated in various devices. The germination speed was evaluated compared to an unexposed control. A positive effect on germination speed was observed in all tested seeds but the effects strongly depended on the type of the used plasma device (Argon-DBD, surface-DBD or MARX generator), time of exposure (6s~10min or 1~10shots) and kind of seeds. The SEM images showed that arrays of gold particles along the cell wall were observed on the surface of cucumber seeds showed a germination-accelerating effect by plasma treatment, which was the same as untreated. However, when treated with the high dose plasma, gold particles were not arrayed at the seed surface, it seems that due to the surface etching. This may suggest that the germination is not promoted by etching or damage of surface caused by the plasma treatment. Seedling growth improvement was also observed by indirect plasma treatment. These lead to an important conclusion that the effect of charged particles on plasma play the essential role in plant germination and indirect plasma treatment offers new perspectives for large scale application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cold%20plasma" title="cold plasma">cold plasma</a>, <a href="https://publications.waset.org/abstracts/search?q=cucumber" title=" cucumber"> cucumber</a>, <a href="https://publications.waset.org/abstracts/search?q=germination" title=" germination"> germination</a>, <a href="https://publications.waset.org/abstracts/search?q=SEM" title=" SEM "> SEM </a> </p> <a href="https://publications.waset.org/abstracts/49540/effects-of-plasma-treatment-on-seed-germination" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/49540.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">315</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5406</span> Control of Oxide and Silicon Loss during Exposure of Silicon Waveguide</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Gu%20Zhonghua">Gu Zhonghua</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Control method of bulk silicon dioxide etching process to approach then expose silicon waveguide has been developed. It has been demonstrated by silicon waveguide of photonics devices. It is also able to generalize other applications. Use plasma dry etching to etch bulk silicon dioxide and approach oxide-silicon interface accurately, then use dilute HF wet etching to etch silicon dioxide residue layer to expose the silicon waveguide as soft landing. Plasma dry etch macro loading effect and endpoint technology was used to determine dry etch time accurately with a low wafer expose ratio. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=waveguide" title="waveguide">waveguide</a>, <a href="https://publications.waset.org/abstracts/search?q=etch" title=" etch"> etch</a>, <a href="https://publications.waset.org/abstracts/search?q=control" title=" control"> control</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20loss" title=" silicon loss"> silicon loss</a> </p> <a href="https://publications.waset.org/abstracts/34993/control-of-oxide-and-silicon-loss-during-exposure-of-silicon-waveguide" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34993.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">414</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5405</span> Carbon Nanofilms on Diamond for All-Carbon Chemical Sensors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Vivek%20Kumar">Vivek Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=Alexander%20M.%20Zaitsev"> Alexander M. Zaitsev</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A study on chemical sensing properties of carbon nanofilms on diamond for developing all-carbon chemical sensors is presented. The films were obtained by high temperature graphitization of diamond followed by successive plasma etchings. Characterization of the films was done by Raman spectroscopy, atomic force microscopy, and electrical measurements. Fast and selective response to common organic vapors as seen as sensitivity of electrical conductance was observed. The phenomenological description of the chemical sensitivity is proposed as a function of the surface and bulk material properties of the films. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chemical%20sensor" title="chemical sensor">chemical sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=carbon%20nanofilm" title=" carbon nanofilm"> carbon nanofilm</a>, <a href="https://publications.waset.org/abstracts/search?q=graphitization%20of%20diamond" title=" graphitization of diamond"> graphitization of diamond</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20etching" title=" plasma etching"> plasma etching</a>, <a href="https://publications.waset.org/abstracts/search?q=Raman%20spectroscopy" title=" Raman spectroscopy"> Raman spectroscopy</a>, <a href="https://publications.waset.org/abstracts/search?q=atomic%20force%20microscopy" title=" atomic force microscopy"> atomic force microscopy</a> </p> <a href="https://publications.waset.org/abstracts/20783/carbon-nanofilms-on-diamond-for-all-carbon-chemical-sensors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/20783.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">446</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5404</span> Nano-Texturing of Single Crystalline Silicon via Cu-Catalyzed Chemical Etching</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20A.%20Abaker%20Omer">A. A. Abaker Omer</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20B.%20Mohamed%20Balh"> H. B. Mohamed Balh</a>, <a href="https://publications.waset.org/abstracts/search?q=W.%20Liu"> W. Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Abas"> A. Abas</a>, <a href="https://publications.waset.org/abstracts/search?q=J.%20Yu"> J. Yu</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Li"> S. Li</a>, <a href="https://publications.waset.org/abstracts/search?q=W.%20Ma"> W. Ma</a>, <a href="https://publications.waset.org/abstracts/search?q=W.%20El%20Kolaly"> W. El Kolaly</a>, <a href="https://publications.waset.org/abstracts/search?q=Y.%20Y.%20Ahmed%20Abuker"> Y. Y. Ahmed Abuker</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO<sub>3</sub>)<sub>2</sub>/HF/H<sub>2</sub>O<sub>2</sub>/H<sub>2</sub>O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Cu-catalyzed%20chemical%20etching" title="Cu-catalyzed chemical etching">Cu-catalyzed chemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=inverted%20pyramid%20nanostructured" title=" inverted pyramid nanostructured"> inverted pyramid nanostructured</a>, <a href="https://publications.waset.org/abstracts/search?q=reflection" title=" reflection"> reflection</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title=" solar cells"> solar cells</a> </p> <a href="https://publications.waset.org/abstracts/118084/nano-texturing-of-single-crystalline-silicon-via-cu-catalyzed-chemical-etching" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/118084.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">154</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5403</span> Silicon Surface Treatment Effect on the Structural, Optical, and Optoelectronic Properties for Solar Cell Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Lotfi%20Hedi%20Khezami">Lotfi Hedi Khezami</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohamed%20Ben%20Rabha"> Mohamed Ben Rabha</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20Sboui"> N. Sboui</a>, <a href="https://publications.waset.org/abstracts/search?q=Mounir%20Gaidi"> Mounir Gaidi</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bessais"> B. Bessais</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Metal-nano particle-assisted Chemical Etching is an extraordinary developed wet etching method of producing uniform semiconductor nano structure (nano wires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and opto electronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and opto electronic properties are presented in this paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=stain%20etching" title="stain etching">stain etching</a>, <a href="https://publications.waset.org/abstracts/search?q=porous%20silicon" title=" porous silicon"> porous silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20nanowires" title=" silicon nanowires"> silicon nanowires</a>, <a href="https://publications.waset.org/abstracts/search?q=reflectivity" title=" reflectivity"> reflectivity</a>, <a href="https://publications.waset.org/abstracts/search?q=lifetime" title=" lifetime"> lifetime</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title=" solar cells"> solar cells</a> </p> <a href="https://publications.waset.org/abstracts/17930/silicon-surface-treatment-effect-on-the-structural-optical-and-optoelectronic-properties-for-solar-cell-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/17930.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">448</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5402</span> 3D Printing of Cold Atmospheric Plasma Treated Poly(ɛ-Caprolactone) for Bone Tissue Engineering</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Dong%20Nyoung%20Heo">Dong Nyoung Heo</a>, <a href="https://publications.waset.org/abstracts/search?q=Il%20Keun%20Kwon"> Il Keun Kwon</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Three-dimensional (3D) technology is a promising method for bone tissue engineering. In order to enhance bone tissue regeneration, it is important to have ideal 3D constructs with biomimetic mechanical strength, structure interconnectivity, roughened surface, and the presence of chemical functionality. In this respect, a 3D printing system combined with cold atmospheric plasma (CAP) was developed to fabricate a 3D construct that has a rough surface with polar functional chemical groups. The CAP-etching process leads to oxidation of chemical groups existing on the polycaprolactone (PCL) surface without conformational change. The surface morphology, chemical composition, mean roughness of the CAP-treated PCL surfaces were evaluated. 3D printed constructs composed of CAP-treated PCL showed an effective increment in the hydrophilicity and roughness of the PCL surface. Also, an in vitro study revealed that CAP-treated 3D PCL constructs had higher cellular behaviors such as cell adhesion, cell proliferation, and osteogenic differentiation. Therefore, a 3D printing system with CAP can be a highly useful fabrication method for bone tissue regeneration. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bone%20tissue%20engineering" title="bone tissue engineering">bone tissue engineering</a>, <a href="https://publications.waset.org/abstracts/search?q=cold%20atmospheric%20plasma" title=" cold atmospheric plasma"> cold atmospheric plasma</a>, <a href="https://publications.waset.org/abstracts/search?q=PCL" title=" PCL"> PCL</a>, <a href="https://publications.waset.org/abstracts/search?q=3D%20printing" title=" 3D printing"> 3D printing</a> </p> <a href="https://publications.waset.org/abstracts/126200/3d-printing-of-cold-atmospheric-plasma-treated-poly-caprolactone-for-bone-tissue-engineering" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/126200.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">114</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5401</span> A Design of Anisotropic Wet Etching System to Reduce Hillocks on Etched Surface of Silicon Substrate</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Alonggot%20Limcharoen%20Kaeochotchuangkul">Alonggot Limcharoen Kaeochotchuangkul</a>, <a href="https://publications.waset.org/abstracts/search?q=Pathomporn%20Sawatchai"> Pathomporn Sawatchai</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This research aims to design and build a wet etching system, which is suitable for anisotropic wet etching, in order to reduce etching time, to reduce hillocks on the etched surface (to reduce roughness), and to create a 45-degree wall angle (micro-mirror). This study would start by designing a wet etching system. There are four main components in this system: an ultrasonic cleaning, a condenser, a motor and a substrate holder. After that, an ultrasonic machine was modified by applying a condenser to maintain the consistency of the solution concentration during the etching process and installing a motor for improving the roughness. This effect on the etch rate and the roughness showed that the etch rate increased and the roughness was reduced. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=anisotropic%20wet%20etching" title="anisotropic wet etching">anisotropic wet etching</a>, <a href="https://publications.waset.org/abstracts/search?q=wet%20etching%20system" title=" wet etching system"> wet etching system</a>, <a href="https://publications.waset.org/abstracts/search?q=hillocks" title=" hillocks"> hillocks</a>, <a href="https://publications.waset.org/abstracts/search?q=ultrasonic%20cleaning" title=" ultrasonic cleaning"> ultrasonic cleaning</a> </p> <a href="https://publications.waset.org/abstracts/109308/a-design-of-anisotropic-wet-etching-system-to-reduce-hillocks-on-etched-surface-of-silicon-substrate" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/109308.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">115</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5400</span> A Dissolution Mechanism of the Silicon Carbide in HF/K₂Cr₂O₇ Solutions</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Karima%20Bourenane">Karima Bourenane</a>, <a href="https://publications.waset.org/abstracts/search?q=Aissa%20Keffous"> Aissa Keffous</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we present an experimental method on the etching reaction of p-type 6H-SiC, etching that was carried out in HF/K₂Cr₂O₇ solutions. The morphology of the etched surface was examined with varying K₂Cr₂O₇ concentrations, etching time and temperature solution. The surfaces of the etched samples were analyzed using Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and Photoluminescence. The surface morphology of samples etched in HF/K₂Cr₂O₇ is shown to depend on the solution composition and bath temperature. The investigation of the HF/K₂Cr₂O₇ solutions on 6H-SiC surface shows that as K₂Cr₂O₇ concentration increases, the etch rate increases to reach a maximum value at about 0.75 M and then decreases. Similar behavior has been observed when the temperature of the solution is increased. The maximum etch rate is found for 80 °C. Taking into account the result, a polishing etching solution of 6H-SiC has been developed. In addition, the result is very interesting when, to date, no chemical polishing solution has been developed on silicon carbide (SiC). Finally, we have proposed a dissolution mechanism of the silicon carbide in HF/K₂Cr₂O₇ solutions. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=silicon%20carbide" title="silicon carbide">silicon carbide</a>, <a href="https://publications.waset.org/abstracts/search?q=dissolution" title=" dissolution"> dissolution</a>, <a href="https://publications.waset.org/abstracts/search?q=Chemical%20etching" title=" Chemical etching"> Chemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=mechanism" title=" mechanism"> mechanism</a> </p> <a href="https://publications.waset.org/abstracts/184641/a-dissolution-mechanism-of-the-silicon-carbide-in-hfk2cr2o7-solutions" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/184641.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">52</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5399</span> Rapid Generation of Octagonal Pyramids on Silicon Wafer for Photovoltaics by Swift Anisotropic Chemical Etching Process</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sami%20Iqbal">Sami Iqbal</a>, <a href="https://publications.waset.org/abstracts/search?q=Azam%20Hussain"> Azam Hussain</a>, <a href="https://publications.waset.org/abstracts/search?q=Weiping%20Wu"> Weiping Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Guo%20Xinli"> Guo Xinli</a>, <a href="https://publications.waset.org/abstracts/search?q=Tong%20Zhang"> Tong Zhang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A novel octagonal upright micro-pyramid structure was generated by wet chemical anisotropic etching on a monocrystalline silicon wafer (100). The primary objectives are to reduce front surface reflectance of silicon wafers, improve wettability, enhance surface morphology, and maximize the area coverage by generated octagonal pyramids. Under rigorous control and observation, the etching process' response time was maintained precisely. The experimental outcomes show a significant decrease in the optical surface reflectance of silicon wafers, with the lowest reflectance of 8.98%, as well as enhanced surface structure, periodicity, and surface area coverage of more than 85%. The octagonal silicon pyramid was formed with a high etch rate of 0.41 um/min and a much shorter reaction time with the addition of hydrofluoric acid coupled with magnetic stirring (mechanical agitation) at 300 rpm. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=octagonal%20pyramids" title="octagonal pyramids">octagonal pyramids</a>, <a href="https://publications.waset.org/abstracts/search?q=rapid%20etching" title=" rapid etching"> rapid etching</a>, <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title=" solar cells"> solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20engineering" title=" surface engineering"> surface engineering</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20reflectance" title=" surface reflectance"> surface reflectance</a> </p> <a href="https://publications.waset.org/abstracts/167589/rapid-generation-of-octagonal-pyramids-on-silicon-wafer-for-photovoltaics-by-swift-anisotropic-chemical-etching-process" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/167589.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">101</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5398</span> Study of Fast Etching of Silicon for the Fabrication of Bulk Micromachined MEMS Structures </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=V.%20Swarnalatha">V. Swarnalatha</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20V.%20Narasimha%20Rao"> A. V. Narasimha Rao</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20Pal"> P. Pal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The present research reports the investigation of fast etching of silicon for the fabrication of microelectromechanical systems (MEMS) structures using silicon wet bulk micromachining. Low concentration tetramethyl-ammonium hydroxide (TMAH) and hydroxylamine (NH<sub>2</sub>OH) are used as main etchant and additive, respectively. The concentration of NH<sub>2</sub>OH is varied to optimize the composition to achieve best etching characteristics such as high etch rate, significantly high undercutting at convex corner for the fast release of the microstructures from the substrate, and improved etched surface morphology. These etching characteristics are studied on Si{100} and Si{110} wafers as they are most widely used in the fabrication of MEMS structures as wells diode, transistors and integrated circuits. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=KOH" title="KOH">KOH</a>, <a href="https://publications.waset.org/abstracts/search?q=MEMS" title=" MEMS"> MEMS</a>, <a href="https://publications.waset.org/abstracts/search?q=micromachining" title=" micromachining"> micromachining</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon" title=" silicon"> silicon</a>, <a href="https://publications.waset.org/abstracts/search?q=TMAH" title=" TMAH"> TMAH</a>, <a href="https://publications.waset.org/abstracts/search?q=wet%20anisotropic%20etching" title=" wet anisotropic etching"> wet anisotropic etching</a> </p> <a href="https://publications.waset.org/abstracts/65235/study-of-fast-etching-of-silicon-for-the-fabrication-of-bulk-micromachined-mems-structures" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/65235.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">202</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5397</span> The Effect of Micro/Nano Structure of Poly (ε-caprolactone) (PCL) Film Using a Two-Step Process (Casting/Plasma) on Cellular Responses</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=JaeYoon%20Lee">JaeYoon Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Gi-Hoon%20Yang"> Gi-Hoon Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=JongHan%20Ha"> JongHan Ha</a>, <a href="https://publications.waset.org/abstracts/search?q=MyungGu%20Yeo"> MyungGu Yeo</a>, <a href="https://publications.waset.org/abstracts/search?q=SeungHyun%20Ahn"> SeungHyun Ahn</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyeongjin%20Lee"> Hyeongjin Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=HoJun%20Jeon"> HoJun Jeon</a>, <a href="https://publications.waset.org/abstracts/search?q=YongBok%20Kim"> YongBok Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Minseong%20Kim"> Minseong Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=GeunHyung%20Kim"> GeunHyung Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> One of the important factors in tissue engineering is to design optimal biomedical scaffolds, which can be governed by topographical surface characteristics, such as size, shape, and direction. Of these properties, we focused on the effects of nano- to micro-sized hierarchical surface. To fabricate the hierarchical surface structure on poly(ε-caprolactone) (PCL) film, we employed a micro-casting technique by pressing the mold and nano-etching technique using a modified plasma process. The micro-sized topography of PCL film was controlled by sizes of the micro structures on lotus leaf. Also, the nano-sized topography and hydrophilicity of PCL film were controlled by a modified plasma process. After the plasma treatment, the hydrophobic property of the PCL film was significantly changed into hydrophilic property, and the nano-sized structure was well developed. The surface properties of the modified PCL film were investigated in terms of initial cell morphology, attachment, and proliferation using osteoblast-like-cells (MG63). In particular, initial cell attachment, proliferation and osteogenic differentiation in the hierarchical structure were enhanced dramatically compared to those of the smooth surface. We believe that these results are because of a synergistic effect between the hierarchical structure and the reactive functional groups due to the plasma process. Based on the results presented here, we propose a new biomimetic surface model that maybe useful for effectively regenerating hard tissues. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=hierarchical%20surface" title="hierarchical surface">hierarchical surface</a>, <a href="https://publications.waset.org/abstracts/search?q=lotus%20leaf" title=" lotus leaf"> lotus leaf</a>, <a href="https://publications.waset.org/abstracts/search?q=nano-etching" title=" nano-etching"> nano-etching</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20treatment" title=" plasma treatment"> plasma treatment</a> </p> <a href="https://publications.waset.org/abstracts/40656/the-effect-of-micronano-structure-of-poly-e-caprolactone-pcl-film-using-a-two-step-process-castingplasma-on-cellular-responses" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/40656.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">375</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5396</span> Effects of Plasma Technology in Biodegradable Films for Food Packaging</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Viviane%20P.%20Romani">Viviane P. Romani</a>, <a href="https://publications.waset.org/abstracts/search?q=Bradley%20D.%20Olsen"> Bradley D. Olsen</a>, <a href="https://publications.waset.org/abstracts/search?q=Vil%C3%A1sia%20G.%20Martins"> Vilásia G. Martins</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Biodegradable films for food packaging have gained growing attention due to environmental pollution caused by synthetic films and the interest in the better use of resources from nature. Important research advances were made in the development of materials from proteins, polysaccharides, and lipids. However, the commercial use of these new generation of sustainable materials for food packaging is still limited due to their low mechanical and barrier properties that could compromise the food quality and safety. Thus, strategies to improve the performance of these materials have been tested, such as chemical modifications, incorporation of reinforcing structures and others. Cold plasma is a versatile, fast and environmentally friendly technology. It consists of a partially ionized gas containing free electrons, ions, and radicals and neutral particles able to react with polymers and start different reactions, leading to the polymer degradation, functionalization, etching and/or cross-linking. In the present study, biodegradable films from fish protein prepared through the casting technique were plasma treated using an AC glow discharge equipment. The reactor was preliminary evacuated to ~7 Pa and the films were exposed to air plasma for 2, 5 and 8 min. The films were evaluated by their mechanical and water vapor permeability (WVP) properties and changes in the protein structure were observed using Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). Potential cross-links and elimination of surface defects by etching might be the reason for the increase in tensile strength and decrease in the elongation at break observed. Among the times of plasma application tested, no differences were observed when higher times of exposure were used. The X-ray pattern showed a broad peak at 2θ = 19.51º that corresponds to the distance of 4.6Å by applying the Bragg’s law. This distance corresponds to the average backbone distance within the α-helix. Thus, the changes observed in the films might indicate that the helical configuration of fish protein was disturbed by plasma treatment. SEM images showed surface damage in the films with 5 and 8 min of plasma treatment, indicating that 2 min was the most adequate time of treatment. It was verified that plasma removes water from the films once weight loss of 4.45% was registered for films treated during 2 min. However, after 24 h in 50% of relative humidity, the water lost was recovered. WVP increased from 0.53 to 0.65 g.mm/h.m².kPa after plasma treatment during 2 min, that is desired for some foods applications which require water passage through the packaging. In general, the plasma technology affects the properties and structure of fish protein films. Since this technology changes the surface of polymers, these films might be used to develop multilayer materials, as well as to incorporate active substances in the surface to obtain active packaging. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=fish%20protein%20films" title="fish protein films">fish protein films</a>, <a href="https://publications.waset.org/abstracts/search?q=food%20packaging" title=" food packaging"> food packaging</a>, <a href="https://publications.waset.org/abstracts/search?q=improvement%20of%20properties" title=" improvement of properties"> improvement of properties</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20treatment" title=" plasma treatment"> plasma treatment</a> </p> <a href="https://publications.waset.org/abstracts/78298/effects-of-plasma-technology-in-biodegradable-films-for-food-packaging" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/78298.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">163</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5395</span> Fabrication of Durable and Renegerable Superhydrophobic Coatings on Metallic Surfaces for Potential Industrial Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Priya%20Varshney">Priya Varshney</a>, <a href="https://publications.waset.org/abstracts/search?q=Soumya%20S.%20Mohapatra"> Soumya S. Mohapatra</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Fabrication of anti-corrosion and self-cleaning superhydrophobic coatings for metallic surfaces which are regenerable and durable in the aggressive conditions has shown tremendous interest in materials science. In this work, the superhydrophobic coatings on metallic surfaces (aluminum, steel, copper) were prepared by two-step and one-step chemical etching process. In two-step process, roughness on surface was created by chemical etching and then passivation of roughened surface with low surface energy materials whereas, in one-step process, roughness on surface by chemical etching and passivation of surface with low surface energy materials were done in a single step. Beside this, the effect of etchant concentration and etching time on wettability and morphology was also studied. Thermal, mechanical, ultra-violet stability of these coatings were also tested. Along with this, regeneration of coatings and self-cleaning, corrosion resistance and water repelling characteristics were also studied. The surface morphology shows the presence of a rough microstuctures on the treated surfaces and the contact angle measurements confirms the superhydrophobic nature. It is experimentally observed that the surface roughness and contact angle increases with increase in etching time as well as with concentration of etchant. Superhydrophobic surfaces show the excellent self-cleaning behaviour. Coatings are found to be stable and maintain their superhydrophobicity in acidic and alkaline solutions. Water jet impact, floatation on water surface, and low temperature condensation tests prove the water-repellent nature of the coatings. These coatings are found to be thermal, mechanical and ultra-violet stable. These durable superhydrophobic metallic surfaces have potential industrial applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=superhydrophobic" title="superhydrophobic">superhydrophobic</a>, <a href="https://publications.waset.org/abstracts/search?q=water-repellent" title=" water-repellent"> water-repellent</a>, <a href="https://publications.waset.org/abstracts/search?q=anti-corrosion" title=" anti-corrosion"> anti-corrosion</a>, <a href="https://publications.waset.org/abstracts/search?q=self-cleaning" title=" self-cleaning"> self-cleaning</a> </p> <a href="https://publications.waset.org/abstracts/61291/fabrication-of-durable-and-renegerable-superhydrophobic-coatings-on-metallic-surfaces-for-potential-industrial-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/61291.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">279</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5394</span> SEM Analysis of the Effectiveness of the Acid Etching on Cat Enamel</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=C.%20Gallottini">C. Gallottini</a>, <a href="https://publications.waset.org/abstracts/search?q=W.%20Di%20Mari"> W. Di Mari</a>, <a href="https://publications.waset.org/abstracts/search?q=C.%20De%20Carolis"> C. De Carolis</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Dolci"> A. Dolci</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Dolci"> G. Dolci</a>, <a href="https://publications.waset.org/abstracts/search?q=L.%20Gallottini"> L. Gallottini</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Barraco"> G. Barraco</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Eramo"> S. Eramo </a> </p> <p class="card-text"><strong>Abstract:</strong></p> The aim of this paper is to summarize the literature on micromorphology and composition of the enamel of the cat and present an original experiment by SEM on how it responds to the etching with ortophosphoric acid for the time recommended in the veterinary literature (30", 45", 60"), derived from research and experience on human enamel; 21 teeth of cat were randomly divided into three groups of 7 (A, B, C): Group A was subjected to etching for 30 seconds by means of orthophosphoric acid to 40% on a circular area with diameter of about 2mm of the enamel coronal; the Groups B and C had the same treatment but, respectively, for 45 and 60 seconds. The samples obtained were observed by SEM to constant magnification of 1000x framing, in particular, the border area between enamel exposed and not exposed to etching to highlight differences. The images were subjected to the analysis of three blinded experienced operators in electron microscopy. In the enamel of the cat the etching for the times considered is not optimally effective for the purpose adhesives and the presence of a thick prismless layer could explain this situation. To improve this condition may clinically in the likeness of what is proposed for the enamel of human deciduous teeth: a bevel or a chamfer of 1 mm on the contour of the cavity to discover the prismatic enamel and increase the bonding surface. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=cat%20enamel" title="cat enamel">cat enamel</a>, <a href="https://publications.waset.org/abstracts/search?q=SEM" title=" SEM"> SEM</a>, <a href="https://publications.waset.org/abstracts/search?q=veterinary%20dentistry" title=" veterinary dentistry"> veterinary dentistry</a>, <a href="https://publications.waset.org/abstracts/search?q=acid%20etching" title=" acid etching"> acid etching</a> </p> <a href="https://publications.waset.org/abstracts/1802/sem-analysis-of-the-effectiveness-of-the-acid-etching-on-cat-enamel" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/1802.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">307</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5393</span> Study of Ion Density Distribution and Sheath Thickness in Warm Electronegative Plasma</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rajat%20Dhawan">Rajat Dhawan</a>, <a href="https://publications.waset.org/abstracts/search?q=Hitendra%20K.%20Malik"> Hitendra K. Malik</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Electronegative plasmas comprising electrons, positive ions, and negative ions are advantageous for their expanding applications in industries. In plasma cleaning, plasma etching, and plasma deposition process, electronegative plasmas are preferred because of relatively less potential developed on the surface of the material under investigation. Also, the presence of negative ions avoid the irregularity in etching shapes and also enhance the material working during the fabrication process. The interaction of metallic conducting surface with plasma becomes mandatory to understand these applications. A metallic conducting probe immersed in a plasma results in the formation of a thin layer of charged species around the probe called as a sheath. The density of the ions embedded on the surface of the material and the sheath thickness are the important parameters for the surface-plasma interaction. Sheath thickness will give rise to the information of affected plasma region due to conducting surface/probe. The knowledge of the density of ions in the sheath region is advantageous in plasma nitriding, and their temperature is equally important as it strongly influences the thickness of the modified layer during surface plasma interaction. In the present work, we considered a negatively biased metallic probe immersed in a warm electronegative plasma. For this system, we adopted the continuity equation and momentum transfer equation for both the positive and negative ions, whereas electrons are described by Boltzmann distribution. Finally, we use the Poisson’s equation. Here, we assumed the spherical geometry for small probe radius. Poisson’s equation reveals the behaviour of potential surrounding a conducting metallic probe along with the use of the continuity and momentum transfer equations, with the help of proper boundary conditions. In turn, it gives rise to the information about the density profile of charged species and most importantly the thickness of the sheath. By keeping in mind, the well-known Bohm-Sheath criterion, all calculations are done. We found that positive ion density decreases with an increase in positive ion temperature, whereas it increases with the higher temperature of the negative ions. Positive ion density decreases as we move away from the center of the probe and is found to show a discontinuity at a particular distance from the center of the probe. The distance where discontinuity occurs is designated as sheath edge, i.e., the point where sheath ends. These results are beneficial for industrial applications, as the density of ions embedded on material surface is strongly affected by the temperature of plasma species. It has a drastic influence on the surface properties, i.e., the hardness, corrosion resistance, etc. of the materials. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electronegative%20plasmas" title="electronegative plasmas">electronegative plasmas</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20surface%20interaction%20positive%20ion%20density" title=" plasma surface interaction positive ion density"> plasma surface interaction positive ion density</a>, <a href="https://publications.waset.org/abstracts/search?q=sheath%20thickness" title=" sheath thickness"> sheath thickness</a> </p> <a href="https://publications.waset.org/abstracts/103124/study-of-ion-density-distribution-and-sheath-thickness-in-warm-electronegative-plasma" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/103124.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">131</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5392</span> Controlled Nano Texturing in Silicon Wafer for Excellent Optical and Photovoltaic Properties</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Deb%20Kumar%20Shah">Deb Kumar Shah</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Shaheer%20Akhtar"> M. Shaheer Akhtar</a>, <a href="https://publications.waset.org/abstracts/search?q=Ha%20Ryeon%20Lee"> Ha Ryeon Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=O-Bong%20Yang"> O-Bong Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=Chong%20Yeal%20Kim"> Chong Yeal Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The crystalline silicon (Si) solar cells are highly renowned photovoltaic technology and well-established as the commercial solar technology. Most of the solar panels are globally installed with the crystalline Si solar modules. At the present scenario, the major photovoltaic (PV) market is shared by c-Si solar cells, but the cost of c-Si panels are still very high as compared with the other PV technology. In order to reduce the cost of Si solar panels, few necessary steps such as low-cost Si manufacturing, cheap antireflection coating materials, inexpensive solar panel manufacturing are to be considered. It is known that the antireflection (AR) layer in c-Si solar cell is an important component to reduce Fresnel reflection for improving the overall conversion efficiency. Generally, Si wafer exhibits the 30% reflection because it normally poses the two major intrinsic drawbacks such as; the spectral mismatch loss and the high Fresnel reflection loss due to the high contrast of refractive indices between air and silicon wafer. In recent years, researchers and scientists are highly devoted to a lot of researches in the field of searching effective and low-cost AR materials. Silicon nitride (SiNx) is well-known AR materials in commercial c-Si solar cells due to its good deposition and interaction with passivated Si surfaces. However, the deposition of SiNx AR is usually performed by expensive plasma enhanced chemical vapor deposition (PECVD) process which could have several demerits like difficult handling and damaging the Si substrate by plasma when secondary electrons collide with the wafer surface for AR coating. It is very important to explore new, low cost and effective AR deposition process to cut the manufacturing cost of c-Si solar cells. One can also be realized that a nano-texturing process like the growth of nanowires, nanorods, nanopyramids, nanopillars, etc. on Si wafer can provide a low reflection on the surface of Si wafer based solar cells. The above nanostructures might be enhanced the antireflection property which provides the larger surface area and effective light trapping. In this work, we report on the development of crystalline Si solar cells without using the AR layer. The Silicon wafer was modified by growing nanowires like Si nanostructures using the wet controlled etching method and directly used for the fabrication of Si solar cell without AR. The nanostructures over Si wafer were optimized in terms of sizes, lengths, and densities by changing the etching conditions. Well-defined and aligned wires like structures were achieved when the etching time is 20 to 30 min. The prepared Si nanostructured displayed the minimum reflectance ~1.64% at 850 nm with the average reflectance of ~2.25% in the wavelength range from 400-1000 nm. The nanostructured Si wafer based solar cells achieved the comparable power conversion efficiency in comparison with c-Si solar cells with SiNx AR layer. From this study, it is confirmed that the reported method (controlled wet etching) is an easy, facile method for preparation of nanostructured like wires on Si wafer with low reflectance in the whole visible region, which has greater prospects in developing c-Si solar cells without AR layer at low cost. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=chemical%20etching" title="chemical etching">chemical etching</a>, <a href="https://publications.waset.org/abstracts/search?q=conversion%20efficiency" title=" conversion efficiency"> conversion efficiency</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20nanostructures" title=" silicon nanostructures"> silicon nanostructures</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20solar%20cells" title=" silicon solar cells"> silicon solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20modification" title=" surface modification"> surface modification</a> </p> <a href="https://publications.waset.org/abstracts/109834/controlled-nano-texturing-in-silicon-wafer-for-excellent-optical-and-photovoltaic-properties" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/109834.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">125</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5391</span> Effect of Accelerated Ions Interacted with Al Targets Using Plasma Focus Device</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Morteza%20Habibi">Morteza Habibi</a>, <a href="https://publications.waset.org/abstracts/search?q=Reza%20Amrollahi"> Reza Amrollahi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The Aluminum made targets were placed at the central part of a Fillipov type (90KJ) plasma focus cathode. These targets were exposed to perpendicular dense plasma stream incidence. Melt layer erosion by melt motion, surface smoothing, and bubble formation were some of different effects caused by diverse working conditions. Micro hardness of surface layer tends to decrease particularly in the central region of the sample where destruction is more intense. The most pronouced melt motion is registered in the region of the maximum gradient of pressure and the etching of aluminium surface is noticeable in the central part of target. The crater with a maximum depth of 200µm, and the diameter of about 8.5mm is observed close to the mountains. Adding Krypton admixture to the Deuterium gas lead to collapsing bubbles and greater surface damage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=fillipov%20type%20plasma%20focus" title="fillipov type plasma focus">fillipov type plasma focus</a>, <a href="https://publications.waset.org/abstracts/search?q=al%20target%20interaction" title=" al target interaction"> al target interaction</a>, <a href="https://publications.waset.org/abstracts/search?q=bubbling%20effect" title=" bubbling effect"> bubbling effect</a>, <a href="https://publications.waset.org/abstracts/search?q=melt%20layer%20motion" title=" melt layer motion"> melt layer motion</a>, <a href="https://publications.waset.org/abstracts/search?q=surface%20smoothing" title=" surface smoothing"> surface smoothing</a> </p> <a href="https://publications.waset.org/abstracts/30371/effect-of-accelerated-ions-interacted-with-al-targets-using-plasma-focus-device" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30371.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">535</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5390</span> Tungsten-Based Powders Produced in Plasma Systems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Andrey%20V.%20Samokhin">Andrey V. Samokhin</a>, <a href="https://publications.waset.org/abstracts/search?q=Nikolay%20V.%20Alekseev"> Nikolay V. Alekseev</a>, <a href="https://publications.waset.org/abstracts/search?q=Mikhail%20A.%20Sinaiskii"> Mikhail A. Sinaiskii</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The report presents the results of R&D of plasma-chemical production of W, W-Cu, W-Ni-Fe nanopowders as well as spherical micropowders of these compounds for their use in modern 3D printing technologies. Plasma-chemical synthesis of nanopowdersis based on the reduction of tungsten oxide compounds powders in a stream of hydrogen-containing low-temperature thermal plasma generated in an electric arc plasma torch. The synthesis of W-Cu and W-Ni-Fe nanocompositesiscarried out using the reduction of a mixture of the metal oxides. Using the synthesized tungsten-based nanocomposites powders, spherical composite micropowders with a submicron structure canbe manufactured by spray dryinggranulation of nanopowder suspension and subsequent densification and spheroidization of granules by melting in a low-temperature thermal plasma flow. The DC arc plasma systems are usedfor the synthesis of nanopowdersas well as for the spheroidization of microgranuls. Plasma systems have a capacity of up to 1 kg/h for nanopowder and up to 5 kg/h for spheroidized powder. All synthesized nanopowders consist of aggregated particles with sizes less than 100 nm, and nanoparticles of W-Cu and W-Ni-Fe composites have core (W) –shell (Cu or Ni-Fe) structures. The resulting dense spherical microparticles with a size of 20-60 microns have a submicron structure with a uniform distribution of metals over the particle volume. The produced tungsten-based nano- and spherical micropowderscan be used to develop new materials and manufacture products using advanced modern technologies. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=plasma" title="plasma">plasma</a>, <a href="https://publications.waset.org/abstracts/search?q=powders" title=" powders"> powders</a>, <a href="https://publications.waset.org/abstracts/search?q=production" title=" production"> production</a>, <a href="https://publications.waset.org/abstracts/search?q=tungsten-based" title=" tungsten-based"> tungsten-based</a> </p> <a href="https://publications.waset.org/abstracts/147220/tungsten-based-powders-produced-in-plasma-systems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/147220.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">120</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5389</span> Haemocompatibility of Surface Modified AISI 316L Austenitic Stainless Steel Tested in Artificial Plasma</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=W.%20Walke">W. Walke</a>, <a href="https://publications.waset.org/abstracts/search?q=J.%20Przondziono"> J. Przondziono</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20Nowi%C5%84ska"> K. Nowińska</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The study comprises evaluation of suitability of passive layer created on the surface of AISI 316L stainless steel for products that are intended to have contact with blood. For that purpose, prior to and after chemical passivation, samples were subject to 7 day exposure in artificial plasma at the temperature of T=37°C. Next, tests of metallic ions infiltration from the surface to the solution were performed. The tests were performed with application of spectrometer JY 2000, by Yobin – Yvon, employing Inductively Coupled Plasma Atomic Emission Spectrometry (ICP-AES). In order to characterize physical and chemical features of electrochemical processes taking place during exposure of samples to artificial plasma, tests with application of electrochemical impedance spectroscopy were suggested. The tests were performed with application of measuring unit equipped with potentiostat PGSTAT 302n with an attachment for impedance tests FRA2. Measurements were made in the environment simulating human blood at the temperature of T=37°C. Performed tests proved that application of chemical passivation process for AISI 316L stainless steel used for production of goods intended to have contact with blood is well-grounded and useful in order to improve safety of their usage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=AISI%20316L%20stainless%20steel" title="AISI 316L stainless steel">AISI 316L stainless steel</a>, <a href="https://publications.waset.org/abstracts/search?q=chemical%20passivation" title=" chemical passivation"> chemical passivation</a>, <a href="https://publications.waset.org/abstracts/search?q=artificial%20plasma" title=" artificial plasma"> artificial plasma</a>, <a href="https://publications.waset.org/abstracts/search?q=ions%20infiltration" title=" ions infiltration"> ions infiltration</a>, <a href="https://publications.waset.org/abstracts/search?q=EIS" title=" EIS"> EIS</a> </p> <a href="https://publications.waset.org/abstracts/8994/haemocompatibility-of-surface-modified-aisi-316l-austenitic-stainless-steel-tested-in-artificial-plasma" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8994.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">266</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5388</span> p-Type Multilayer MoS₂ Enabled by Plasma Doping for Ultraviolet Photodetectors Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Xiao-Mei%20Zhang">Xiao-Mei Zhang</a>, <a href="https://publications.waset.org/abstracts/search?q=Sian-Hong%20Tseng"> Sian-Hong Tseng</a>, <a href="https://publications.waset.org/abstracts/search?q=Ming-Yen%20Lu"> Ming-Yen Lu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as MoS₂, have attracted considerable attention owing to the unique optical and electronic properties related to its 2D ultrathin atomic layer structure. MoS₂ is becoming prevalent in post-silicon digital electronics and in highly efficient optoelectronics due to its extremely low thickness and its tunable band gap (Eg = 1-2 eV). For low-power, high-performance complementary logic applications, both p- and n-type MoS₂ FETs (NFETs and PFETs) must be developed. NFETs with an electron accumulation channel can be obtained using unintentionally doped n-type MoS₂. However, the fabrication of MoS₂ FETs with complementary p-type characteristics is challenging due to the significant difficulty of injecting holes into its inversion channel. Plasma treatments with different species (including CF₄, SF₆, O₂, and CHF₃) have also been found to achieve the desired property modifications of MoS₂. In this work, we demonstrated a p-type multilayer MoS₂ enabled by selective-area doping using CHF₃ plasma treatment. Compared with single layer MoS₂, multilayer MoS₂ can carry a higher drive current due to its lower bandgap and multiple conduction channels. Moreover, it has three times the density of states at its minimum conduction band. Large-area growth of MoS₂ films on 300 nm thick SiO₂/Si substrate is carried out by thermal decomposition of ammonium tetrathiomolybdate, (NH₄)₂MoS₄, in a tube furnace. A two-step annealing process is conducted to synthesize MoS₂ films. For the first step, the temperature is set to 280 °C for 30 min in an N₂ rich environment at 1.8 Torr. This is done to transform (NH₄)₂MoS₄ into MoS₃. To further reduce MoS₃ into MoS₂, the second step of annealing is performed. For the second step, the temperature is set to 750 °C for 30 min in a reducing atmosphere consisting of 90% Ar and 10% H₂ at 1.8 Torr. The grown MoS₂ films are subjected to out-of-plane doping by CHF₃ plasma treatment using a Dry-etching system (ULVAC original NLD-570). The radiofrequency power of this dry-etching system is set to 100 W and the pressure is set to 7.5 mTorr. The final thickness of the treated samples is obtained by etching for 30 s. Back-gated MoS₂ PFETs were presented with an on/off current ratio in the order of 10³ and a field-effect mobility of 65.2 cm²V⁻¹s⁻¹. The MoS₂ PFETs photodetector exhibited ultraviolet (UV) photodetection capability with a rapid response time of 37 ms and exhibited modulation of the generated photocurrent by back-gate voltage. This work suggests the potential application of the mild plasma-doped p-type multilayer MoS₂ in UV photodetectors for environmental monitoring, human health monitoring, and biological analysis. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=photodetection" title="photodetection">photodetection</a>, <a href="https://publications.waset.org/abstracts/search?q=p-type%20doping" title=" p-type doping"> p-type doping</a>, <a href="https://publications.waset.org/abstracts/search?q=multilayers" title=" multilayers"> multilayers</a>, <a href="https://publications.waset.org/abstracts/search?q=MoS%E2%82%82" title=" MoS₂"> MoS₂</a> </p> <a href="https://publications.waset.org/abstracts/109648/p-type-multilayer-mos2-enabled-by-plasma-doping-for-ultraviolet-photodetectors-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/109648.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">104</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5387</span> Magnetic Field Generation in Inhomogeneous Plasma via Ponderomotive Force</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fatemeh%20Shahi">Fatemeh Shahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mehdi%20Sharifian"> Mehdi Sharifian</a>, <a href="https://publications.waset.org/abstracts/search?q=Laia%20Shahrassai"> Laia Shahrassai</a>, <a href="https://publications.waset.org/abstracts/search?q=Elham%20Eskandari%20A."> Elham Eskandari A.</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A new mechanism is reported here for magnetic field generation in laser-plasma interaction by means of nonlinear ponderomotive force. The plasma considered here is unmagnetized inhomogeneous plasma with an exponentially decreasing profile. A damped periodic magnetic field with a relatively lower frequency is obtained using the ponderomotive force exerted on plasma electrons. Finally, with an electric field and by using Faraday’s law, the magnetic field profile in the plasma has been obtained. Because of the negative exponential density profile, the generated magnetic field is relatively slowly oscillating and damped through the plasma. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=magnetic%20field%20generation" title="magnetic field generation">magnetic field generation</a>, <a href="https://publications.waset.org/abstracts/search?q=laser-plasma%20interaction" title=" laser-plasma interaction"> laser-plasma interaction</a>, <a href="https://publications.waset.org/abstracts/search?q=ponderomotive%20force" title=" ponderomotive force"> ponderomotive force</a>, <a href="https://publications.waset.org/abstracts/search?q=inhomogeneous%20plasma" title=" inhomogeneous plasma"> inhomogeneous plasma</a> </p> <a href="https://publications.waset.org/abstracts/134152/magnetic-field-generation-in-inhomogeneous-plasma-via-ponderomotive-force" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/134152.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">293</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5386</span> Condition for Plasma Instability and Stability Approaches</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ratna%20Sen">Ratna Sen</a> </p> <p class="card-text"><strong>Abstract:</strong></p> As due to very high temperature of Plasma it is very difficult to confine it for sufficient time so that nuclear fusion reactions to take place, As we know Plasma escapes faster than the binary collision rates. We studied the ball analogy and the ‘energy principle’ and calculated the total potential energy for the whole Plasma. If δ ⃗w is negative, that is decrease in potential energy then the plasma will be unstable. We also discussed different approaches of stability analysis such as Nyquist Method, MHD approximation and Vlasov approach of plasma stability. So that by using magnetic field configurations we can able to create a stable Plasma in Tokamak for generating energy for future generations. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=jello" title="jello">jello</a>, <a href="https://publications.waset.org/abstracts/search?q=magnetic%20field%20configuration" title=" magnetic field configuration"> magnetic field configuration</a>, <a href="https://publications.waset.org/abstracts/search?q=MHD%20approximation" title=" MHD approximation"> MHD approximation</a>, <a href="https://publications.waset.org/abstracts/search?q=energy%20principle" title=" energy principle"> energy principle</a> </p> <a href="https://publications.waset.org/abstracts/50172/condition-for-plasma-instability-and-stability-approaches" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/50172.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">442</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5385</span> New Restoration Reagent for Development of Erased Serial Number on Copper Metal Surface</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Lav%20Kesharwani">Lav Kesharwani</a>, <a href="https://publications.waset.org/abstracts/search?q=Nalini%20Shankar"> Nalini Shankar</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20K.%20Gupta"> A. K. Gupta</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A serial number is a unique code assigned for identification of a single unit. Serial number are present on many objects. In an attempt to hide the identity of the numbered item, the numbers are often obliterated or removed by mechanical methods. The present work was carried out with an objective to develop less toxic, less time consuming, more result oriented chemical etching reagent for restoration of serial number on the copper metal plate. Around nine different reagents were prepared using different combination of reagent along with standard reagent and it was applied over 50 erased samples of copper metal and compared it with the standard reagent for restoration of erased marks. After experiment, it was found that the prepared Etching reagent no. 3 (10 g FeCl3 + 20 ml glacial acetic acid + 100 ml distilled H2O) showed the best result for restoration of erased serial number on the copper metal plate .The reagent was also less toxic and less time consuming as compared to standard reagent (19 g FeCl3 + 6 ml cans. HCl + 100 ml distilled H2O). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=serial%20number%20restoration" title="serial number restoration">serial number restoration</a>, <a href="https://publications.waset.org/abstracts/search?q=copper%20plate" title=" copper plate"> copper plate</a>, <a href="https://publications.waset.org/abstracts/search?q=obliteration" title=" obliteration"> obliteration</a>, <a href="https://publications.waset.org/abstracts/search?q=chemical%20method" title=" chemical method"> chemical method</a> </p> <a href="https://publications.waset.org/abstracts/29117/new-restoration-reagent-for-development-of-erased-serial-number-on-copper-metal-surface" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/29117.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">556</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5384</span> Learning Materials of Atmospheric Pressure Plasma Process: Turning Hydrophilic Surface to Hydrophobic</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=C.W.%20Kan">C.W. Kan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper investigates the use of atmospheric pressure plasma for improving the surface hydrophobicity of polyurethane synthetic leather with tetramethylsilane (TMS). The atmospheric pressure plasma treatment with TMS is a single-step process to enhance the hydrophobicity of polyurethane synthetic leather. The hydrophobicity of the treated surface was examined by contact angle measurement. The physical and chemical surface changes were evaluated by scanning electron microscopy (SEM) and infrared spectroscopy (FTIR). The purpose of this paper is to provide learning materials for understanding how to use atmospheric pressure plasma in the textile finishing process to transform a hydrophilic surface to hydrophobic. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Learning%20materials" title="Learning materials">Learning materials</a>, <a href="https://publications.waset.org/abstracts/search?q=atmospheric%20pressure%20plasma%20treatment" title=" atmospheric pressure plasma treatment"> atmospheric pressure plasma treatment</a>, <a href="https://publications.waset.org/abstracts/search?q=hydrophobic" title=" hydrophobic"> hydrophobic</a>, <a href="https://publications.waset.org/abstracts/search?q=hydrophilic" title=" hydrophilic"> hydrophilic</a>, <a href="https://publications.waset.org/abstracts/search?q=surface" title=" surface"> surface</a> </p> <a href="https://publications.waset.org/abstracts/49534/learning-materials-of-atmospheric-pressure-plasma-process-turning-hydrophilic-surface-to-hydrophobic" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/49534.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">353</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5383</span> Forecasting Etching Behavior Silica Sand Using the Design of Experiments Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kefaifi%20Aissa">Kefaifi Aissa</a>, <a href="https://publications.waset.org/abstracts/search?q=Sahraoui%20Tahar"> Sahraoui Tahar</a>, <a href="https://publications.waset.org/abstracts/search?q=Kheloufi%20Abdelkrim"> Kheloufi Abdelkrim</a>, <a href="https://publications.waset.org/abstracts/search?q=Anas%20Sabiha"> Anas Sabiha</a>, <a href="https://publications.waset.org/abstracts/search?q=Hannane%20Farouk"> Hannane Farouk</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The aim of this study is to show how the Design of Experiments Method (DOE) can be put into use as a practical approach for silica sand etching behavior modeling during its primary step of leaching. In the present work, we have studied etching effect on particle size during a primary step of leaching process on Algerian silica sand with florid acid (HF) at 20% and 30 % during 4 and 8 hours. Therefore, a new purity of the sand is noted depending on the time of leaching. This study was expanded by a numerical approach using a method of experiment design, which shows the influence of each parameter and the interaction between them in the process and approved the obtained experimental results. This model is a predictive approach using hide software. Based on the measured parameters experimentally in the interior of the model, the use of DOE method can make it possible to predict the outside parameters of the model in question and can give us the optimize response without making the experimental measurement. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=acid%20leaching" title="acid leaching">acid leaching</a>, <a href="https://publications.waset.org/abstracts/search?q=design%20of%20experiments%20method%28DOE%29" title=" design of experiments method(DOE)"> design of experiments method(DOE)</a>, <a href="https://publications.waset.org/abstracts/search?q=purity%20silica" title=" purity silica"> purity silica</a>, <a href="https://publications.waset.org/abstracts/search?q=silica%20etching" title=" silica etching"> silica etching</a> </p> <a href="https://publications.waset.org/abstracts/46244/forecasting-etching-behavior-silica-sand-using-the-design-of-experiments-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/46244.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">286</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=4">4</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=5">5</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=6">6</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=7">7</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=8">8</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=9">9</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=plasma%20chemical%20etching&page=10">10</a></li> <li class="page-item disabled"><span class="page-link">...</span></li> <li class="page-item"><a class="page-link" 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