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<p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152218101.jpg" alt="场景1" width="668" height="445" /></p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/28/152229911.jpg" alt="场景2" width="668" height="445" /></p> <p style="text-align: center;">分会现场</p> <p>论坛期间,由深圳市汇芯通信技术有限公司/国家5G中高频器件创新中心,北京国联万众半导体科技有限公司,国家第三代半导体技术创新中心(苏州),苏州思体尔软件科技有限公司,北京北方华创微电子装备有限公司协办支持的&ldquo;氮化镓射频电子器件与应用&rdquo;技术分会上,香港科技大学高通光学实验室主任、教授、高武半导体(香港)有限公司创始人俞捷,小米通讯技术有限公司高级硬件研发工程师孙跃,中国科学技术大学微电子学院教授、安徽云塔电子科技有限公司创始人左成杰,西安电子科技大学教授薛军帅,深圳市汇芯通信技术有限公司、国家5G中高频器件创新中心副总经理、CTO许明伟,苏州能讯高能半导体有限公司研发总监张新川,中国科学院半导体研究所副研究员张连,九峰山实验室熊鑫,江南大学集成电路学院博士刘涛,中国科学院微电子研究所张国祥等嘉宾们带来精彩报告,共同探讨氮化镓射频电子器件与应用的进展与趋势。苏州能讯高能半导体有限公司总裁张乃千,中国科学院半导体研究所副所长、研究员张韵共同主持了分会。</p> <p align="center"><img src="http://www.casmita.com/file/upload/202411/28/152347761.jpg" alt="张乃千-主持人" width="668" height="445" />&nbsp;</p> <p align="center">张乃千</p> <p align="center">苏州能讯高能半导体有限公司总裁</p> <p align="center"><img src="http://www.casmita.com/file/upload/202411/28/152358471.jpg" alt="张韵" width="668" height="445" />&nbsp;</p> <p align="center">张韵</p> <p align="center">中国科学院半导体研究所副所长、研究员</p> <p align="center"><img src="http://www.casmita.com/file/upload/202411/28/152415531.jpg" alt="俞捷" width="668" height="445" />&nbsp;</p> <p align="center">俞捷</p> <p align="center">香港科技大学高通光学实验室主任、教授、高武半导体(香港)有限公司创始人</p> <p>香港科技大学高通光学实验室主任、教授、高武半导体(香港)有限公司创始人俞捷做了&ldquo;赋能未来数据中心和6G网络的下一代高端节能半导体芯粒&rdquo;的主题报告,涉及高端生态半导体芯片的High5核心技术,下一代通信市场机遇(2025-2035),企业光和无线通信市场趋势,GaN充电器和高电源,技术发展路线图,数据中心互连中下一代光通信的高性能驱动器,6G网络和卫星通信无线产品,High5半预期产品等内容。</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152428951.jpg" alt="孙跃" width="668" height="445" /></p> <p align="center">孙跃</p> <p align="center">小米通讯技术有限公司高级硬件研发工程师</p> <p>小米通讯技术有限公司高级硬件研发工程师孙跃做了&ldquo;移动终端射频功放应用问题探讨&rdquo;的主题报告,涉及移动通信中关键发射机特性的演变,手机功率放大器模块的研制,手机功放在实际应用中的问题,以及基于WBG的移动通信PA的探讨等。报告指出,随着移动通信的快速发展,手机需要高输出功率、高阶信号调制和高频谱效率。这促使PA设计师开发先进的PA架构和集成封装模块。非线性行为、输出回退(OBO)效率、坚固性、稳定性和封装EMI屏蔽在PA器件设计中值得重视。宽禁带半导体在移动通信领域仍有很大的增长空间。</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152441911.jpg" alt="左成杰" /></p> <p align="center">左成杰</p> <p align="center">中国科学技术大学微电子学院教授、安徽云塔电子科技有限公司创始人</p> <p>射频滤波器主导射频前端市场。中国科学技术大学微电子学院教授、安徽云塔电子科技有限公司创始人左成杰做了&ldquo;面向6G和Wi-Fi 7 的高频和宽带射频滤波器&rdquo;的主题报告,结合目前发展趋势,分享了相关研究进展与成果。涉及兰姆波谐振器、耦合SAW谐振器等。</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152453691.jpg" alt="薛军帅" width="668" height="445" /></p> <p align="center">薛军帅</p> <p align="center">西安电子科技大学教授</p> <p align="center">《同质外延氮化镓射频电子器件研究进展》</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/28/152550401.jpg" alt="许明伟" width="668" height="445" /></p> <p align="center">许明伟</p> <p align="center">深圳市汇芯通信技术有限公司、国家5G中高频器件创新中心副总经理、CTO</p> <p align="center">《FLAB:特色射频半导体的技术创新模式探索》</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152618941.jpg" alt="能讯代替裴轶?" width="668" height="445" /></p> <p align="center">张新川 &nbsp;&nbsp;</p> <p align="center">苏州能讯高能半导体有限公司研发总监</p> <p>氮化镓非常适合于制造5G毫米波射频前端集成。苏州能讯高能半导体有限公司副总裁裴轶做了&ldquo;先进射频氮化镓制造中心支持DC-40GHz MMIC代工&rdquo;的主题报告,6英寸GaN HEMT、高级过程控制、先进的热解决方案、高功率高效率PA等内容。</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152628461.jpg" alt="张连" width="668" height="445" /></p> <p align="center">张连</p> <p align="center">中国科学院半导体研究所副研究员</p> <p align="center">《fT/fmax=10.4/7.1GHz 的蓝宝石上AlGaN/GaN异质结双极晶体管》</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152643721.jpg" alt="熊鑫" width="668" height="445" /></p> <p align="center">熊鑫</p> <p align="center">九峰山实验室</p> <p>九峰山实验室熊鑫做了&ldquo;高性能、低成本、小型化集成无源器件技术&rdquo;的主题报告,分享了集成无源器件IPD技术、九峰山实验室IPD_PDK技术,基于IPD_PDK设计的超宽带功分器等内容。报告显示,基于九峰山实验室工艺平台和自研的IPD工艺Flow,开发了IPD的背孔工艺、空气桥等关键工艺,实现IPD无源器件包括电阻、电容、圆形电感、方形电感等器件。3-20 GHz超宽带功分器采用威尔金森功分器架构,采用三级级联结构拓展带宽,电阻采用TFR电阻,JFS IPD_PDK通过功分器、巴伦等电路设计已完成原理图仿真、版图EM仿真、调谐优化等功能性验证,PDK功能完善且使用便捷,设计的无源电路性能突出,该功分器在超宽带范围内具有良好的回波损耗与插入损耗,以及隔离度,尺寸为1.2 mm*3 mm。</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152657891.jpg" alt="代替李杨-江南大学" width="668" height="445" /></p> <p align="center">刘涛</p> <p align="center">江南大学集成电路学院博士</p> <p>江南大学集成电路学院副教授李杨做了&ldquo;基于氮化镓肖特基二极管的微波无线能量收集&rdquo;的主题报告,涉及整流损耗计算、氮化镓肖特基二极管、氮化镓微波整流器及其应用等内容。</p> <p>报告显示,研究提出了一种用于预测微波整流二极管效率的新型等效电流模型。基于所提模型的分析,并结合氮化镓二极管的工艺设计,已经设计和制造了多种高性能的氮化镓肖特基二极管。展示了基于氮化镓的微波整流器,适用于常见的ISM频段,包括900 MHz、2.4 GHz和5.8 GHz,并介绍了它们的应用,分别实现了最大整流效率92.3%、91%和80%。特别是,GaN-SBD首次应用于微瓦级整流,在0 dBm和-10 dBm时的效率与现有技术水平相比最高。这展示了氮化镓材料在微波无线输电领域巨大的潜力。</p> <p style="text-align: center;">&nbsp;<img src="http://www.casmita.com/file/upload/202411/28/152709811.jpg" alt="张国祥" width="668" height="445" /></p> <p align="center">张国祥</p> <p align="center">中国科学院微电子研究所</p> <p>中国科学院微电子研究所张国祥做了&ldquo;基于GaN SBD技术的具有快速恢复性能的大功率微波限幅器&rdquo;的主题报告,分享了GaN SBD技术、GaN SBD MMIC特性等相关研究进展。报告显示,在不同频率下,快速恢复时间在100 W下小于39 ns。由于SBD的多数载流子导通机制,该限制器不仅具有设计方法简单、阈值设计自由度高的优点,而且具有无尖峰泄漏和易于集成的特点。&nbsp;</p> <p>(根据现场资料整理,仅供参考)&nbsp;&nbsp;</p></div> </div> <div class="award"><div onclick="Go('http://www.casmita.com/member/award.php?mid=21&itemid=17266');">打赏</div></div><div id="comment" style="display:;"> <div class="block-head"><a href="http://www.casmita.com/comment/index.php?mid=21&itemid=17266"><b id="comment_count" class="px16 f_red">0</b> 条评论</a></div> <div id="comment_main"><div></div></div> </div> <script type="text/javascript" src="http://www.casmita.com/file/script/comment.js"></script> <div class="related"> <a href="http://www.casmita.com/news/search.php?kw="></a><a 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