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<span style="padding-right:1em">来源：半导体产业网</span><span id="hits">阅读：5286</span> </div> <div class="introduce">核心提示：2024年度中国第三代半导体技术十大进展正式揭晓，以更好的把握行业前沿、凸显具有影响力和突破性的进展，为行业发展提供清晰视角，激励更多创新。</div><div id="content"><div class="content" id="article"><p> 2024年11月18-21日，第十届国际第三代半导体论坛&第二十一届中国国际半导体照明论坛（IFWS&SSLCHINA2024）在苏州盛大召开。由院士领衔，来自产业链各环节的超千人代表出席了开幕大会。开幕式上，举行了一系列活动，2024年度中国第三代半导体技术十大进展正式揭晓，备受关注。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/22/104514572.jpg" width="668" height="445" alt="" /></p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202411/20/090827921.jpg" alt="吴主任发布十大技术进展" width="668" height="445" /> </p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/20/090840561.jpg" alt="十大技术进展名单" width="668" height="243" /></p> <p style="text-align: center;">第三代半导体产业技术创新战略联盟理事长、国家新材料产业发展专家咨询委员会委员吴玲发布2024年度中国第三代半导体技术十大进展。</p> <p align="justify">2024年，我国第三代半导体技术与产业发展日新月异。在快速变化的浪潮中，为了更好的把握行业前沿、凸显具有影响力和突破性的进展，为行业发展提供清晰视角，激励更多创新，大会程序委员会倡议，启动2024年度中国第三代半导体技术十大进展评选活动，截止11月10日通过自荐、推荐和公开信息整理等途径，共收到备选技术39项，经程序委员会投票、综合评议最终确定10项技术进展。</p> <p align="justify">第三代半导体技术与产业正飞速发展，也为业界带来了黄金机遇。技术突破将带来性能卓越的产品，产业发展将催生大量合作，助力开拓出更多的新兴市场。 </p> <p align="justify"><strong>附：2024年度中国第三代半导体技术十大进展（</strong><b>排名不分先后）</b></p> <p><b>（一）</b><b>6-8英寸蓝宝石基氮化镓中高压电力电子器件技术实现重大突破</b></p> <p>西安电子科技大学广州第三代半导体创新中心团队成功攻克了6-8英寸蓝宝石基GaN电力电子器件的外延、设计、制造和可靠性等系列难题，提出了新型低翘曲超薄外延异质结构和<span style="font-size: 13px;"><span style="text-indent: 2em; font-family: 仿宋_GB2312;">Al</span><sub style="text-indent: 2em;"><span style="font-family: 仿宋_GB2312; vertical-align: sub;">2</span></sub><span style="text-indent: 2em; font-family: 仿宋_GB2312;">O</span><sub style="text-indent: 2em;"><span style="font-family: 仿宋_GB2312; vertical-align: sub;">3</span></sub><span style="text-indent: 2em; font-family: 仿宋_GB2312;">/S</span><span style="text-indent: 2em; font-family: 仿宋_GB2312;">iO</span><sub style="text-indent: 2em;"><span style="font-family: 仿宋_GB2312; vertical-align: sub;">2</span></sub></span><span style="text-indent: 2em;">复合介质钝化方法，实现1200V和1700 V高性能 GaN HEMT中试产品开发，通过HTRB、HTGB等可靠性评价，成果应用于致能科技等公司系列产品中，显著推动蓝宝石基GaN成为中高压电力电子器件方案的有利竞争者。</span></p> <p style="text-align: center;">       <img src="http://www.casmita.com/file/upload/202411/20/090915501.jpg" width="668" height="257" alt="" /> </p> <p><b>（二）</b><b>垂直注入</b><b>铝镓氮</b><b>基深紫外发光器件的晶圆级制备</b></p> <p>针对深紫外LED电光转换效率低下的难题，北京大学团队提出了一种基于GaN/蓝宝石模板的深紫外LED制备新技术路线，通过高Al组分AlGaN层预置裂纹，实现器件结构层与GaN层的应力解耦，得到表面无裂纹的深紫外LED晶圆，同时预置裂纹可有效缓冲剥离过程中的局部应力。该技术路线充分利用了Ga金属滴在激光剥离过程中为液态的优点，采用常规的355 nm短波长激光器实现了深紫外LED外延结构2-4英寸晶圆级无损伤剥离，并成功制备出垂直注入器件，200 mA注入电流下，发光波长280 nm的深紫外LED光输出功率达65.2mW。相关成果发表于《Nature Communications》上。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/20/090929841.jpg" width="651" height="512" alt="" /> </p> <p> </p> <p><b>（三）基于铟镓氮红光</b><b>Micro-LED芯片的全彩显示技术</b></p> <p>南京大学、厦门大学、合肥工业大学和沙特阿卜杜拉国王科技大学联合攻关氮化镓基高铟组分红光材料及其Micro-LED器件技术，采用分子束外延制备出高电注入效率的隧道结红光Micro-LED器件。相关成果发表在《Applied Physics Letters》上，并选为Editor’s Pick。进一步与天马微电子公司合作，研制出国际上第一块基于铟镓氮基红绿蓝Micro-LED芯片的1.63寸、像素密度达403 PPI的TFT驱动全彩显示屏，完成了Micro-LED全彩显示方案的新技术验证。</p> <p style="text-align: center;"><b><img src="http://www.casmita.com/file/upload/202411/20/090945761.jpg" width="668" height="602" alt="" /> </b></p> <p><b>（四）高功率密度、高能效比深紫外</b><b>Micro-LED显示芯片</b></p> <p>香港科技大学、南方科技大学、国家第三代半导体技术创新中心（苏州）、思坦科技等单位通过长期联合攻关，基于高功率密度、高像素密度、低功耗的深紫外Micro-LED显示芯片实现了深紫外Micro-LED无掩膜光刻技术，搭建了无掩膜光刻原型机平台并制备首个深紫外Micro-LED无掩膜曝光的Micro-LED器件，将紫外光源和掩膜板图案融为一体，在短时间内为光刻胶曝光提供足够的辐照剂量，为产业发展开创了一条新路径，相关成果发表在《Nature Photonics》。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202411/20/091001461.jpg" width="668" height="366" alt="" /></p> <p> </p> <p><b>（五）氮化镓</b><b>缺陷引起的局域振动的原子尺度可视化</b></p> <p>针对氮化物半导体中与缺陷相关的局域振动模难以分析表征的问题，北京大学团队与美国橡树岭国家实验室合作，使用扫描透射电子显微镜-电子能量损失谱技术，结合高角环形暗场成像及EELS谱与第一性原理计算，精确识别了氮化镓中层错缺陷的原子结构，并观测到相关的三种声子振动模式：局域缺陷模式、受限体模式和完全扩展模式。相关研究实现了氮化物半导体中缺陷相关的声子模式分辨，并为氮化物半导体器件的热管理技术发展提供了新的思路。相关成果发表在《Nature Communications》上。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/20/091013641.jpg" width="668" height="542" alt="" /> </p> <p><b>（六）千伏级氧化镓垂直槽栅晶体管</b></p> <p style="text-align: center;">中国科学技术大学团队针对氧化镓缺乏有效p型掺杂导致难以实现增强型垂直结构晶体管的难题，通过优化后退火工艺实现氮替位激活和晶格损伤修复，研制出千伏级氧化镓垂直槽栅晶体管，为实现面向应用的高性能氧化镓晶体管提供了新思路。该成果发表于第36届国际功率半导体器件和集成电路会议，并获得了大会唯一最佳海报奖。<img src="http://www.casmita.com/file/upload/202411/20/091026121.jpg" width="640" height="454" alt="" /> </p> <p><b>（七）</b><b>2英寸单晶金刚石异质外延自支撑衬底实现国产化</b></p> <p>西安交大研究团队采用微波等离子体化学气相沉积技术，成功实现2英寸异质外延单晶金刚石自支撑衬底的国产化。通过对成膜均匀性、温场及流场的有效调控，提高了异质外延单晶金刚石成品率。衬底表面具有台阶流生长模式，可降低衬底的缺陷密度，提高晶体质量。XRD（004）、（311）摇摆曲线半峰宽分别小于91弧秒和111 弧秒，为金刚石的半导体应用奠定了基础。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/20/091035421.jpg" width="668" height="245" alt="" /> </p> <p><b>（八）</b><b>8英寸碳化硅材料和晶圆制造实现产业化突破</b></p> <p>成本与有效产能是阻碍碳化硅进入大规模应用的关键性问题，从6英寸向8英寸转型升级已成为产业发展的大势所趋。国内多家材料企业实现8英寸产业化技术突破，形成供货能力。国内8英寸碳化硅晶圆制造线工艺技术通过产品流片验证，正式开启碳化硅8英寸进程。</p> <p><b>（九）国产车规级碳化硅</b><b>MOSFET</b><b>器件实现新能源汽车电驱应用</b></p> <p>实现车规级碳化硅材料、器件设计、工艺加工和模块封装全链条技术突破，关键指标对标国外量产产品典型技术水平。采用国产碳化硅MOSFET的电驱系统通过汽车企业验证，应用数量超千台。</p> <p><b>（十）氮化镓基蓝光激光器关键技术取得产业化突破</b></p> <p>氮化镓基蓝光激光器关键技术取得产业化突破：氮化镓单晶衬底形成以中科院苏州纳米所、南京大学、苏州纳维、东莞中镓、上海镓特等为代表的产学研方阵，产品达到国际先进水平，国产化率达到50%以上；苏州镓锐、飓芯科技、三安光电等均推出蓝光激光器产品，室温连续工作3安培电流下光功率5瓦，WPE效率超过41%，60度条件下加速老化外推寿命大于2万小时。</p> <p style="text-align: center;"> <img src="http://www.casmita.com/file/upload/202411/20/091048461.jpg" width="460" height="316" alt="" /></p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202411/20/091057361.jpg" width="668" height="257" alt="" /></p> <p> </p></div> </div> <div class="award"><div 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