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Search results for: induced voltage

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text-center" style="font-size:1.6rem;">Search results for: induced voltage</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3961</span> A Model for Analysis the Induced Voltage of 115 kV On-Line Acting on Neighboring 22 kV Off-Line</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sakhon%20Woothipatanapan">Sakhon Woothipatanapan</a>, <a href="https://publications.waset.org/abstracts/search?q=Surasit%20Prakobkit"> Surasit Prakobkit</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a model for analysis the induced voltage of transmission lines (energized) acting on neighboring distribution lines (de-energized). From environmental restrictions, 22 kV distribution lines need to be installed under 115 kV transmission lines. With the installation of the two parallel circuits like this, they make the induced voltage which can cause harm to operators. This work was performed with the ATP-EMTP modeling to analyze such phenomenon before field testing. Simulation results are used to find solutions to prevent danger to operators who are on the pole. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=transmission%20system" title="transmission system">transmission system</a>, <a href="https://publications.waset.org/abstracts/search?q=distribution%20system" title=" distribution system"> distribution system</a>, <a href="https://publications.waset.org/abstracts/search?q=induced%20voltage" title=" induced voltage"> induced voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=off-line%20operation" title=" off-line operation"> off-line operation</a> </p> <a href="https://publications.waset.org/abstracts/5933/a-model-for-analysis-the-induced-voltage-of-115-kv-on-line-acting-on-neighboring-22-kv-off-line" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/5933.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">606</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3960</span> Modeling of Induced Voltage in Disconnected Grounded Conductor of Three-Phase Power Line</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Misho%20Matsankov">Misho Matsankov</a>, <a href="https://publications.waset.org/abstracts/search?q=Stoyan%20Petrov"> Stoyan Petrov</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The paper presents the methodology and the obtained mathematical models for determining the value of the grounding resistance of a disconnected conductor in a three-phase power line, for which the contact voltage is safe, by taking into account the potentials, induced by the non-disconnected phase conductors. The mathematical models have been obtained by implementing the experimental design techniques. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=contact%20voltage" title="contact voltage">contact voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=experimental%20design" title=" experimental design"> experimental design</a>, <a href="https://publications.waset.org/abstracts/search?q=induced%20voltage" title=" induced voltage"> induced voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=safety" title=" safety"> safety</a> </p> <a href="https://publications.waset.org/abstracts/137892/modeling-of-induced-voltage-in-disconnected-grounded-conductor-of-three-phase-power-line" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/137892.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">176</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3959</span> SCR-Based Advanced ESD Protection Device for Low Voltage Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bo%20Bae%20Song">Bo Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung%20Seok%20Lee"> Byung Seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyun%20young%20Kim"> Hyun young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3, and D4). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/21774/scr-based-advanced-esd-protection-device-for-low-voltage-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/21774.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">575</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3958</span> Failure Localization of Bipolar Integrated Circuits by Implementing Active Voltage Contrast</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yiqiang%20Ni">Yiqiang Ni</a>, <a href="https://publications.waset.org/abstracts/search?q=Xuanlong%20Chen"> Xuanlong Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Enliang%20Li"> Enliang Li</a>, <a href="https://publications.waset.org/abstracts/search?q=Linting%20Zheng"> Linting Zheng</a>, <a href="https://publications.waset.org/abstracts/search?q=Shizheng%20Yang"> Shizheng Yang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Bipolar ICs are playing an important role in military applications, mainly used in logic gates, such as inverter and NAND gate. The defect of metal break located on the step is one of the main failure mechanisms of bipolar ICs, resulting in open-circuit or functional failure. In this situation, general failure localization methods like optical beam-induced resistance change (OBIRCH) and photon emission microscopy (PEM) might not be fully effective. However, active voltage contrast (AVC) can be used as a voltage probe, which may pinpoint the incorrect potential and thus locate the failure position. Two case studies will be present in this paper on how to implement AVC for failure localization, and the detailed failure mechanism will be discussed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bipolar%20IC" title="bipolar IC">bipolar IC</a>, <a href="https://publications.waset.org/abstracts/search?q=failure%20localization" title=" failure localization"> failure localization</a>, <a href="https://publications.waset.org/abstracts/search?q=metal%20break" title=" metal break"> metal break</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20failure" title=" open failure"> open failure</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20contrast" title=" voltage contrast"> voltage contrast</a> </p> <a href="https://publications.waset.org/abstracts/132527/failure-localization-of-bipolar-integrated-circuits-by-implementing-active-voltage-contrast" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/132527.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">291</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3957</span> DG Power Plants Placement and Evaluation of its Effect on Improving Voltage Security Margin in Radial Distribution Networks</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Atabak%20Faramarzpour">Atabak Faramarzpour</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohsen%20Mohammadian"> Mohsen Mohammadian</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this article, we introduce the stability of power system voltage and state DG power plants placement and its effect on improving voltage security margin in radial distribution networks. For this purpose, first, important definitions in voltage stability area such as small and big voltage disturbances, instability, and voltage collapse, and voltage security definitions are stated. Then, according to voltage collapse time, voltage stability is classified and each one's characteristics are stated. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DG%20power%20plants" title="DG power plants">DG power plants</a>, <a href="https://publications.waset.org/abstracts/search?q=evaluation" title=" evaluation"> evaluation</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20security" title=" voltage security"> voltage security</a>, <a href="https://publications.waset.org/abstracts/search?q=radial%20distribution%20networks" title=" radial distribution networks"> radial distribution networks</a> </p> <a href="https://publications.waset.org/abstracts/25147/dg-power-plants-placement-and-evaluation-of-its-effect-on-improving-voltage-security-margin-in-radial-distribution-networks" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/25147.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">670</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3956</span> A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae">Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Bo-Bae%20Song"> Bo-Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/80537/a-study-on-esd-protection-circuit-applying-silicon-controlled-rectifier-based-stack-technology-with-high-holding-voltage" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80537.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">548</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3955</span> Study on the Voltage Induced Wrinkling of Elastomer with Different Electrode Areas</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zhende%20Hou">Zhende Hou</a>, <a href="https://publications.waset.org/abstracts/search?q=Fan%20Yang"> Fan Yang</a>, <a href="https://publications.waset.org/abstracts/search?q=Guoli%20Zhang"> Guoli Zhang </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Dielectric elastomer is a promising class of Electroactive polymers which can deform in response to an applied electric field. Comparing general smart material, the Dielectric elastomer is more compliance and can achieve higher energy density, which can be for diverse applications such as actuators, artificial muscles, soft robotics, and energy harvesters. The coupling of the Electroactive polymers and the electric field is that the elastomer is sandwiched between two compliant electrodes and when the electrodes are subjected to a voltage, the positive and negative charges on the two electrodes compress the polymer, so that the polymer reduces in thickness and expands in area. However, the pre-stretched dielectric elastomer film not only can achieve large electric-field induced deformation but also is prone to wrinkling, under the interaction of its own strain energy and the applied electric field energy. For a uniaxially pre-stretched dielectric elastomer film, the electrode area is an important parameter to the electric-field induced deformation and may also be a key factor affecting the film wrinkling. To determine and quantify the effect experimentally, VHB 9473 tapes were employed and compliant electrodes with different areas were pant on each of them. The tape was first tensed to a uniaxial stretch of 8. Then a DC voltage was applied to the electrodes and increased gradually until wrinkling occurred in the film. Then, the critical wrinkling voltages of the film with different electrode areas were obtained, and the wrinkle wavelengths were obtained simultaneously for analyzing the wrinkling characteristics. Experimental results indicate when the electrode area is smaller the wrinkling voltage is higher, and with the increases of electrode area, the wrinkling voltage decreases rapidly until a specific area. Beyond that, the wrinkling voltage becomes larger gradually with the increases of the area. While the wrinkle wavelength decreases gradually with the increase of voltage monotonically. That is, the relation between the critical wrinkling voltage and the electrode areas is U-shaped. Analysis believes that the film wrinkling is a kind of local effect, the interaction and the energy transfer between electrode region and non-electrode region have great influence on wrinkling. In the experiment, very thin copper wires are used as the electrode leads that just contact with the electrodes, which can avoid the stiffness of the leads affecting the wrinkling. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=elastomers" title="elastomers">elastomers</a>, <a href="https://publications.waset.org/abstracts/search?q=uniaxial%20stretch" title=" uniaxial stretch"> uniaxial stretch</a>, <a href="https://publications.waset.org/abstracts/search?q=electrode%20area" title=" electrode area"> electrode area</a>, <a href="https://publications.waset.org/abstracts/search?q=wrinkling" title=" wrinkling"> wrinkling</a> </p> <a href="https://publications.waset.org/abstracts/93758/study-on-the-voltage-induced-wrinkling-of-elastomer-with-different-electrode-areas" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/93758.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">248</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3954</span> Impact of Series Reactive Compensation on Increasing a Distribution Network Distributed Generation Hosting Capacity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Moataz%20Ammar">Moataz Ammar</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahdab%20Elmorshedy"> Ahdab Elmorshedy</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The distributed generation hosting capacity of a distribution network is typically limited at a given connection point by the upper voltage limit that can be violated due to the injection of active power into the distribution network. The upper voltage limit violation concern becomes more important as the network equivalent resistance increases with respect to its equivalent reactance. This paper investigates the impact of modifying the distribution network equivalent reactance at the point of connection such that the upper voltage limit is violated at a higher distributed generation penetration, than it would without the addition of series reactive compensation. The results show that series reactive compensation proves efficient in certain situations (based on the ratio of equivalent network reactance to equivalent network resistance at the point of connection). As opposed to the conventional case of capacitive compensation of a distribution network to reduce voltage drop, inductive compensation is seen to be more appropriate for alleviation of distributed-generation-induced voltage rise. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=distributed%20generation" title="distributed generation">distributed generation</a>, <a href="https://publications.waset.org/abstracts/search?q=distribution%20networks" title=" distribution networks"> distribution networks</a>, <a href="https://publications.waset.org/abstracts/search?q=series%20compensation" title=" series compensation"> series compensation</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20rise" title=" voltage rise"> voltage rise</a> </p> <a href="https://publications.waset.org/abstracts/67485/impact-of-series-reactive-compensation-on-increasing-a-distribution-network-distributed-generation-hosting-capacity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/67485.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">395</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3953</span> A Study on Unidirectional Analog Output Voltage Inverter for Capacitive Load</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sun-Ki%20Hong">Sun-Ki Hong</a>, <a href="https://publications.waset.org/abstracts/search?q=Nam-HeeByeon"> Nam-HeeByeon</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung-Seop%20Lee"> Jung-Seop Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae-Sam%20Kang"> Tae-Sam Kang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> For Common R or R-L load to apply arbitrary voltage, the bridge traditional inverters don’t have any difficulties by PWM method. However for driving some piezoelectric actuator, arbitrary voltage not a pulse but a steady voltage should be applied. Piezoelectric load is considered as R-C load and its voltage does not decrease even though the applied voltage decreases. Therefore it needs some special inverter with circuit that can discharge the capacitive energy. Especially for unidirectional arbitrary voltage driving like as sine wave, it becomes more difficult problem. In this paper, a charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator is proposed. The circuit has charging and discharging switches for increasing and decreasing output voltage. With the proposed simple circuit, the load voltage can have any unidirectional level with tens of bandwidth because the load voltage can be adjusted by switching the charging and discharging switch appropriately. The appropriateness is proved from the simulation of the proposed circuit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DC-DC%20converter" title="DC-DC converter">DC-DC converter</a>, <a href="https://publications.waset.org/abstracts/search?q=analog%20output%20voltage" title=" analog output voltage"> analog output voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=sinusoidal%20drive" title=" sinusoidal drive"> sinusoidal drive</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric%20load" title=" piezoelectric load"> piezoelectric load</a>, <a href="https://publications.waset.org/abstracts/search?q=discharging%20circuit" title=" discharging circuit "> discharging circuit </a> </p> <a href="https://publications.waset.org/abstracts/8464/a-study-on-unidirectional-analog-output-voltage-inverter-for-capacitive-load" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8464.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3952</span> SCR-Stacking Structure with High Holding Voltage for IO and Power Clamp</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hyun%20Young%20Kim">Hyun Young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Han%20Hee%20Cho">Han Hee Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Sang%20Woon%20Cho"> Sang Woon Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=stack" title=" stack"> stack</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a> </p> <a href="https://publications.waset.org/abstracts/30148/scr-stacking-structure-with-high-holding-voltage-for-io-and-power-clamp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30148.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">557</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3951</span> Optimal Design of Linear Generator to Recharge the Smartphone Battery</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jin%20Ho%20Kim">Jin Ho Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Yujeong%20Shin"> Yujeong Shin</a>, <a href="https://publications.waset.org/abstracts/search?q=Seong-Jin%20Cho"> Seong-Jin Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Dong-Jin%20Kim"> Dong-Jin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=U-Syn%20Ha"> U-Syn Ha</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Due to the development of the information industry and technologies, cellular phones have must not only function to communicate, but also have functions such as the Internet, e-banking, entertainment, etc. These phones are called smartphones. The performance of smartphones has improved, because of the various functions of smartphones, and the capacity of the battery has been increased gradually. Recently, linear generators have been embedded in smartphones in order to recharge the smartphone's battery. In this study, optimization is performed and an array change of permanent magnets is examined in order to increase efficiency. We propose an optimal design using design of experiments (DOE) to maximize the generated induced voltage. The thickness of the poleshoe and permanent magnet (PM), the height of the poleshoe and PM, and the thickness of the coil are determined to be design variables. We made 25 sampling points using an orthogonal array according to four design variables. We performed electromagnetic finite element analysis to predict the generated induced voltage using the commercial electromagnetic analysis software ANSYS Maxwell. Then, we made an approximate model using the Kriging algorithm, and derived optimal values of the design variables using an evolutionary algorithm. The commercial optimization software PIAnO (Process Integration, Automation, and Optimization) was used with these algorithms. The result of the optimization shows that the generated induced voltage is improved. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=smartphone" title="smartphone">smartphone</a>, <a href="https://publications.waset.org/abstracts/search?q=linear%20generator" title=" linear generator"> linear generator</a>, <a href="https://publications.waset.org/abstracts/search?q=design%20of%20experiment" title=" design of experiment"> design of experiment</a>, <a href="https://publications.waset.org/abstracts/search?q=approximate%20model" title=" approximate model"> approximate model</a>, <a href="https://publications.waset.org/abstracts/search?q=optimal%20design" title=" optimal design"> optimal design</a> </p> <a href="https://publications.waset.org/abstracts/43482/optimal-design-of-linear-generator-to-recharge-the-smartphone-battery" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/43482.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">345</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3950</span> Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo">Yong Seo Koo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jong%20Ho%20Nam"> Jong Ho Nam</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Nam%20Choi"> Yong Nam Choi</a>, <a href="https://publications.waset.org/abstracts/search?q=Dae%20Yeol%20Yoo"> Dae Yeol Yoo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung%20Woo%20Han"> Jung Woo Han</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electro-static%20discharge%20%28ESD%29" title="electro-static discharge (ESD)">electro-static discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=protection%20circuit" title=" protection circuit"> protection circuit</a> </p> <a href="https://publications.waset.org/abstracts/9524/analysis-of-scr-based-esd-protection-circuit-on-holding-voltage-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9524.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3949</span> A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-il%20Do">Kyoung-il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung-seok%20Lee"> Byung-seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-guk%20Chae"> Hee-guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-yun%20Seo%20Yong-seo%20Koo"> Jeong-yun Seo Yong-seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/89519/a-silicon-controlled-rectifier-based-esd-protection-circuit-with-high-holding-voltage-and-high-robustness-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/89519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">397</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3948</span> Analog Voltage Inverter Drive for Capacitive Load with Adaptive Gain Control</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sun-Ki%20Hong">Sun-Ki Hong</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Ho%20Cho"> Yong-Ho Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Seok%20Kim"> Ki-Seok Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae-Sam%20Kang"> Tae-Sam Kang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=analog%20voltage%20inverter" title="analog voltage inverter">analog voltage inverter</a>, <a href="https://publications.waset.org/abstracts/search?q=capacitive%20load" title=" capacitive load"> capacitive load</a>, <a href="https://publications.waset.org/abstracts/search?q=gain%20control" title=" gain control"> gain control</a>, <a href="https://publications.waset.org/abstracts/search?q=dc-dc%20converter" title=" dc-dc converter"> dc-dc converter</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric" title=" piezoelectric"> piezoelectric</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20waveform" title=" voltage waveform"> voltage waveform</a> </p> <a href="https://publications.waset.org/abstracts/34752/analog-voltage-inverter-drive-for-capacitive-load-with-adaptive-gain-control" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34752.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">655</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3947</span> Comparative Study of Line Voltage Stability Indices for Voltage Collapse Forecasting in Power Transmission System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=H.%20H.%20Goh">H. H. Goh</a>, <a href="https://publications.waset.org/abstracts/search?q=Q.%20S.%20Chua"> Q. S. Chua</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20W.%20Lee"> S. W. Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20C.%20Kok"> B. C. Kok</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20C.%20Goh"> K. C. Goh</a>, <a href="https://publications.waset.org/abstracts/search?q=K.%20T.%20K.%20Teo"> K. T. K. Teo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> At present, the evaluation of voltage stability assessment experiences sizeable anxiety in the safe operation of power systems. This is due to the complications of a strain power system. With the snowballing of power demand by the consumers and also the restricted amount of power sources, therefore, the system has to perform at its maximum proficiency. Consequently, the noteworthy to discover the maximum ability boundary prior to voltage collapse should be undertaken. A preliminary warning can be perceived to evade the interruption of power system’s capacity. The effectiveness of line voltage stability indices (LVSI) is differentiated in this paper. The main purpose of the indices is used to predict the proximity of voltage instability of the electric power system. On the other hand, the indices are also able to decide the weakest load buses which are close to voltage collapse in the power system. The line stability indices are assessed using the IEEE 14 bus test system to validate its practicability. Results demonstrated that the implemented indices are practically relevant in predicting the manifestation of voltage collapse in the system. Therefore, essential actions can be taken to dodge the incident from arising. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=critical%20line" title="critical line">critical line</a>, <a href="https://publications.waset.org/abstracts/search?q=line%20outage" title=" line outage"> line outage</a>, <a href="https://publications.waset.org/abstracts/search?q=line%20voltage%20stability%20indices%20%28LVSI%29" title=" line voltage stability indices (LVSI)"> line voltage stability indices (LVSI)</a>, <a href="https://publications.waset.org/abstracts/search?q=maximum%20loadability" title=" maximum loadability"> maximum loadability</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20collapse" title=" voltage collapse"> voltage collapse</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20instability" title=" voltage instability"> voltage instability</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20stability%20analysis" title=" voltage stability analysis"> voltage stability analysis</a> </p> <a href="https://publications.waset.org/abstracts/15431/comparative-study-of-line-voltage-stability-indices-for-voltage-collapse-forecasting-in-power-transmission-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/15431.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">360</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3946</span> New Series Input Parallel Output LLC DC/DC Converter with the Input Voltage Balancing Capacitor for the Electric System of Electric Vehicles</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kang%20Hyun%20Yi">Kang Hyun Yi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a new parallel output LLC DC/DC converter for electric vehicle. The electric vehicle has two batteries. One is a high voltage battery for the powertrain of the vehicle and the other is a low voltage battery for the vehicle electric system. The low voltage is charged from the high voltage battery and the high voltage input and the high current output DC/DC converter is needed. Therefore, the new LLC converter with the input voltage compensation is proposed for the high voltage input and the low voltage output DC/DC converter. The proposed circuit has two LLC converters with the series input voltage from the battery for the powertrain and the parallel output low battery voltage for the vehicle electric system because the battery voltage for the powertrain and the electric power for the vehicle become high. Also, the input series voltage compensation capacitor is used for balancing the input current in the two LLC converters. The proposed converter has an equal electric stress of the semiconductor parts and the reactive components, high efficiency and good heat dissipation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electric%20vehicle" title="electric vehicle">electric vehicle</a>, <a href="https://publications.waset.org/abstracts/search?q=LLC%20DC%2FDC%20converter" title=" LLC DC/DC converter"> LLC DC/DC converter</a>, <a href="https://publications.waset.org/abstracts/search?q=input%20voltage%20balancing" title=" input voltage balancing"> input voltage balancing</a>, <a href="https://publications.waset.org/abstracts/search?q=parallel%20output" title=" parallel output"> parallel output</a> </p> <a href="https://publications.waset.org/abstracts/31896/new-series-input-parallel-output-llc-dcdc-converter-with-the-input-voltage-balancing-capacitor-for-the-electric-system-of-electric-vehicles" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/31896.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">1052</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3945</span> Electrical Properties of Polarization-Induced Aluminum Nitride/Gallium Nitride Heterostructures Homoepitaxially Grown on Aluminum Nitride Sapphire Template by Molecular Beam Epitaxy</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Guanlin%20Wu">Guanlin Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Jiajia%20Yao"> Jiajia Yao</a>, <a href="https://publications.waset.org/abstracts/search?q=Fang%20Liu"> Fang Liu</a>, <a href="https://publications.waset.org/abstracts/search?q=Junshuai%20Xue"> Junshuai Xue</a>, <a href="https://publications.waset.org/abstracts/search?q=Jincheng%20Zhang"> Jincheng Zhang</a>, <a href="https://publications.waset.org/abstracts/search?q=Yue%20Hao"> Yue Hao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Owing to the excellent thermal conductivity and ultra-wide bandgap, Aluminum nitride (AlN)/Gallium nitride (GaN) is a highly promising material to achieve high breakdown voltage and output power devices among III-nitrides. In this study, we explore the growth and characterization of polarization-induced AlN/GaN heterostructures using plasma-assisted molecular beam epitaxy (PA-MBE) on AlN-on-sapphire templates. To improve the crystal quality and demonstrate the effectiveness of the PA-MBE approach, a thick AlN buffer of 180 nm was first grown on the AlN-on sapphire template. This buffer acts as a back-barrier to enhance the breakdown characteristic and isolate leakage paths that exist in the interface between the AlN epilayer and the AlN template. A root-mean-square roughness of 0.2 nm over a scanned area of 2×2 µm2 was measured by atomic force microscopy (AFM), and the full-width at half-maximum of (002) and (102) planes on the X-ray rocking curve was 101 and 206 arcsec, respectively, using by high-resolution X-ray diffraction (HR-XRD). The electron mobility of 443 cm2/Vs with a carrier concentration of 2.50×1013 cm-2 at room temperature was achieved in the AlN/GaN heterostructures by using a polarization-induced GaN channel. The low depletion capacitance of 15 pF is resolved by the capacitance-voltage. These results indicate that the polarization-induced AlN/GaN heterostructures have great potential for next-generation high-temperature, high-frequency, and high-power electronics. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=AlN" title="AlN">AlN</a>, <a href="https://publications.waset.org/abstracts/search?q=GaN" title=" GaN"> GaN</a>, <a href="https://publications.waset.org/abstracts/search?q=MBE" title=" MBE"> MBE</a>, <a href="https://publications.waset.org/abstracts/search?q=heterostructures" title=" heterostructures"> heterostructures</a> </p> <a href="https://publications.waset.org/abstracts/165723/electrical-properties-of-polarization-induced-aluminum-nitridegallium-nitride-heterostructures-homoepitaxially-grown-on-aluminum-nitride-sapphire-template-by-molecular-beam-epitaxy" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/165723.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">85</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3944</span> Voltage Stability Assessment and Enhancement Using STATCOM -A Case Study</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Puneet%20Chawla">Puneet Chawla</a>, <a href="https://publications.waset.org/abstracts/search?q=Balwinder%20Singh"> Balwinder Singh </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Recently, increased attention has been devoted to the voltage instability phenomenon in power systems. Many techniques have been proposed in the literature for evaluating and predicting voltage stability using steady state analysis methods. In this paper, P-V and Q-V curves have been generated for a 57 bus Patiala Rajpura circle of India. The power-flow program is developed in MATLAB using Newton-Raphson method. Using Q-V curves, the weakest bus of the power system and the maximum reactive power change permissible on that bus is calculated. STATCOMs are placed on the weakest bus to improve the voltage and hence voltage stability and also the power transmission capability of the line. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=voltage%20stability" title="voltage stability">voltage stability</a>, <a href="https://publications.waset.org/abstracts/search?q=reactive%20power" title=" reactive power"> reactive power</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20flow" title=" power flow"> power flow</a>, <a href="https://publications.waset.org/abstracts/search?q=weakest%20bus" title=" weakest bus"> weakest bus</a>, <a href="https://publications.waset.org/abstracts/search?q=STATCOM" title=" STATCOM"> STATCOM</a> </p> <a href="https://publications.waset.org/abstracts/3097/voltage-stability-assessment-and-enhancement-using-statcom-a-case-study" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/3097.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">515</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3943</span> Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sanghoon%20Park">Sanghoon Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Jin%20Kim"> Ki-Jin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwang-Ho%20Ahn"> Kwang-Ho Ahn</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=voltage%20sense%20amplifier" title="voltage sense amplifier">voltage sense amplifier</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20transition" title=" voltage transition"> voltage transition</a>, <a href="https://publications.waset.org/abstracts/search?q=node%20stabilization" title=" node stabilization"> node stabilization</a>, <a href="https://publications.waset.org/abstracts/search?q=biasing%20circuits" title=" biasing circuits"> biasing circuits</a> </p> <a href="https://publications.waset.org/abstracts/6878/internal-node-stabilization-for-voltage-sense-amplifiers-in-multi-channel-systems" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/6878.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">479</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3942</span> Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do">Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park"> Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae"> Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrostatic%20discharge%20%28ESD%29" title="electrostatic discharge (ESD)">electrostatic discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20voltage%20trigger%20silicon%20controlled%20rectifier%20%28LVTSCR%29" title=" low voltage trigger silicon controlled rectifier (LVTSCR)"> low voltage trigger silicon controlled rectifier (LVTSCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=MVTSCR" title=" MVTSCR"> MVTSCR</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/73702/low-trigger-voltage-silicon-controlled-rectifier-stacking-structure-with-high-holding-voltage-for-high-voltage-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73702.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">458</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3941</span> Voltage and Current Control of Microgrid in Grid Connected and Islanded Modes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Megha%20Chavda">Megha Chavda</a>, <a href="https://publications.waset.org/abstracts/search?q=Parth%20Thummar"> Parth Thummar</a>, <a href="https://publications.waset.org/abstracts/search?q=Rahul%20Ghetia"> Rahul Ghetia</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents the voltage and current control of microgrid accompanied by the synchronization of microgrid with the main utility grid in both islanded and grid-connected modes. Distributed Energy Resources (DERs) satisfy the wide-spread power demand of consumer by behaving as a micro source for a low voltage (LV) grid or microgrid. Synchronization of the microgrid with the main utility grid is done using PLL and PWM gate pulse generation technique is used for the Voltage Source Converter. Potential Function method achieves the voltage and current control of this microgrid in both islanded and grid-connected modes. A low voltage grid consisting of three distributed generators (DG) is considered for the study and is simulated in time-domain using PSCAD/EMTDC software. The simulation results depict the appropriateness of voltage and current control of microgrid and synchronization of microgrid with the medium voltage (MV) grid. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=microgrid" title="microgrid">microgrid</a>, <a href="https://publications.waset.org/abstracts/search?q=distributed%20energy%20resources" title=" distributed energy resources"> distributed energy resources</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20and%20current%20control" title=" voltage and current control"> voltage and current control</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20source%20converter" title=" voltage source converter"> voltage source converter</a>, <a href="https://publications.waset.org/abstracts/search?q=pulse%20width%20modulation" title=" pulse width modulation"> pulse width modulation</a>, <a href="https://publications.waset.org/abstracts/search?q=phase%20locked%20loop" title=" phase locked loop"> phase locked loop</a> </p> <a href="https://publications.waset.org/abstracts/52368/voltage-and-current-control-of-microgrid-in-grid-connected-and-islanded-modes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/52368.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">414</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3940</span> Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sanghoon%20Park">Sanghoon Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Jin%20Kim"> Ki-Jin Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwang-Ho%20Ahn"> Kwang-Ho Ahn</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=voltage%20sense%20amplifier" title="voltage sense amplifier">voltage sense amplifier</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-inputs" title=" multi-inputs"> multi-inputs</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20transition" title=" voltage transition"> voltage transition</a>, <a href="https://publications.waset.org/abstracts/search?q=node%20stabilization" title=" node stabilization"> node stabilization</a>, <a href="https://publications.waset.org/abstracts/search?q=biasing%20circuits" title=" biasing circuits"> biasing circuits</a> </p> <a href="https://publications.waset.org/abstracts/23974/stabilization-technique-for-multi-inputs-voltage-sense-amplifiers-in-node-sharing-converters" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/23974.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">565</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3939</span> Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/56482/analysis-of-stacked-scr-based-esd-protection-circuit-with-low-trigger-voltage-and-latch-up-immunity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56482.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">524</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3938</span> An Active Rectifier with Time-Domain Delay Compensation to Enhance the Power Conversion Efficiency</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shao-Ku%20Kao">Shao-Ku Kao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 &Omega; ~ 1500 &Omega; for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=wireless%20power%20transfer" title="wireless power transfer">wireless power transfer</a>, <a href="https://publications.waset.org/abstracts/search?q=active%20diode" title=" active diode"> active diode</a>, <a href="https://publications.waset.org/abstracts/search?q=delay%20compensation" title=" delay compensation"> delay compensation</a>, <a href="https://publications.waset.org/abstracts/search?q=time%20to%20voltage%20converter" title=" time to voltage converter"> time to voltage converter</a>, <a href="https://publications.waset.org/abstracts/search?q=PCE" title=" PCE"> PCE</a> </p> <a href="https://publications.waset.org/abstracts/99488/an-active-rectifier-with-time-domain-delay-compensation-to-enhance-the-power-conversion-efficiency" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/99488.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">282</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3937</span> Coordinated Voltage Control in a Radial Distribution System</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shivarudraswamy">Shivarudraswamy</a>, <a href="https://publications.waset.org/abstracts/search?q=Anubhav%20Shrivastava"> Anubhav Shrivastava</a>, <a href="https://publications.waset.org/abstracts/search?q=Lakshya%20Bhat"> Lakshya Bhat</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Distributed generation has indeed become a major area of interest in recent years. Distributed Generation can address large number of loads in a power line and hence has better efficiency over the conventional methods. However there are certain drawbacks associated with it, increase in voltage being the major one. This paper addresses the voltage control at the buses for an IEEE 30 bus system by regulating reactive power. For carrying out the analysis, the suitable location for placing distributed generators (DG) is identified through load flow analysis and seeing where the voltage profile is dipping. MATLAB programming is used to regulate the voltage at all buses within +/-5% of the base value even after the introduction of DG’s. Three methods for regulation of voltage are discussed. A sensitivity based analysis is later carried out to determine the priority among the various methods listed in the paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=distributed%20generators" title="distributed generators">distributed generators</a>, <a href="https://publications.waset.org/abstracts/search?q=distributed%20system" title=" distributed system"> distributed system</a>, <a href="https://publications.waset.org/abstracts/search?q=reactive%20power" title=" reactive power"> reactive power</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20control" title=" voltage control"> voltage control</a> </p> <a href="https://publications.waset.org/abstracts/28710/coordinated-voltage-control-in-a-radial-distribution-system" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/28710.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">500</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3936</span> Electrochemical Studies of Si, Si-Ge- and Ge-Air Batteries</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=R.%20C.%20Sharma">R. C. Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Rishabh%20Bansal"> Rishabh Bansal</a>, <a href="https://publications.waset.org/abstracts/search?q=Prajwal%20Menon"> Prajwal Menon</a>, <a href="https://publications.waset.org/abstracts/search?q=Manoj%20K.%20Sharma"> Manoj K. Sharma</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Silicon-air battery is highly promising for electric vehicles due to its high theoretical energy density (8470 Whkg⁻¹) and its discharge products are non-toxic. For the first time, pure silicon and germanium powders are used as anode material. Nickel wire meshes embedded with charcoal and manganese dioxide powder as cathode and concentrated potassium hydroxide is used as electrolyte. Voltage-time curves have been presented in this study for pure silicon and germanium powder and 5% and 10% germanium with silicon powder. Silicon powder cell assembly gives a stable voltage of 0.88 V for ~20 minutes while Si-Ge provides cell voltage of 0.80-0.76 V for ~10-12 minutes, and pure germanium cell provides cell voltage 0.80-0.76 V for ~30 minutes. The cell voltage is higher for concentrated (10%) sodium hydroxide solution (1.08 V) and it is stable for ~40 minutes. A sharp decrease in cell voltage beyond 40 min may be due to rapid corrosion. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Silicon-air%20battery" title="Silicon-air battery">Silicon-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=Germanium-air%20battery" title=" Germanium-air battery"> Germanium-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage-time%20curve" title=" voltage-time curve"> voltage-time curve</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage" title=" open circuit voltage"> open circuit voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=Anodic%20corrosion" title=" Anodic corrosion"> Anodic corrosion</a> </p> <a href="https://publications.waset.org/abstracts/138312/electrochemical-studies-of-si-si-ge-and-ge-air-batteries" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/138312.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">238</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3935</span> High-Quality Flavor of Black Belly Pork under Lightning Corona Discharge Using Tesla Coil for High Voltage Education</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hoon%20Jang">Kyung-Hoon Jang</a>, <a href="https://publications.waset.org/abstracts/search?q=Jae-Hyo%20Park"> Jae-Hyo Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kwang-Yeop%20Jang"> Kwang-Yeop Jang</a>, <a href="https://publications.waset.org/abstracts/search?q=Dongjin%20Kim"> Dongjin Kim</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The Tesla coil is an electrical resonant transformer circuit designed by inventor Nikola Tesla in 1891. It is used to produce high voltage, low current and high frequency alternating current electricity. Tesla experimented with a number of different configurations consisting of two or sometimes three coupled resonant electric circuits. This paper focuses on development and high voltage education to apply a Tesla coil to cuisine for high quality flavor and taste conditioning as well as high voltage education under 50 kV corona discharge. The result revealed that the velocity of roasted black belly pork by Tesla coil is faster than that of conventional methods such as hot grill and steel plate etc. depending on applied voltage level and applied voltage time. Besides, carbohydrate and crude protein increased, whereas natrium and saccharides significantly decreased after lightning surge by Tesla coil. This idea will be useful in high voltage education and high voltage application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=corona%20discharge" title="corona discharge">corona discharge</a>, <a href="https://publications.waset.org/abstracts/search?q=Tesla%20coil" title=" Tesla coil"> Tesla coil</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20voltage%20application" title=" high voltage application"> high voltage application</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20voltage%20education" title=" high voltage education"> high voltage education</a> </p> <a href="https://publications.waset.org/abstracts/77120/high-quality-flavor-of-black-belly-pork-under-lightning-corona-discharge-using-tesla-coil-for-high-voltage-education" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/77120.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">328</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3934</span> Dynamics of Light Induced Current in 1D Coupled Quantum Dots</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Tokuei%20Sako">Tokuei Sako</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Laser-induced current in a quasi-one-dimensional nanostructure has been studied by a model of a few electrons confined in a 1D electrostatic potential coupled to electrodes at both ends and subjected to a pulsed laser field. The time-propagation of the one- and two-electron wave packets has been calculated by integrating the time-dependent Schrödinger equation directly by the symplectic integrator method with uniform Fourier grid. The temporal behavior of the resultant light-induced current in the studied systems has been discussed with respect to the lifetime of the quasi-bound states formed when the static bias voltage is applied. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=pulsed%20laser%20field" title="pulsed laser field">pulsed laser field</a>, <a href="https://publications.waset.org/abstracts/search?q=nanowire" title=" nanowire"> nanowire</a>, <a href="https://publications.waset.org/abstracts/search?q=electron%20wave%20packet" title=" electron wave packet"> electron wave packet</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20dots" title=" quantum dots"> quantum dots</a>, <a href="https://publications.waset.org/abstracts/search?q=time-dependent%20Schr%C3%B6dinger%20equation" title=" time-dependent Schrödinger equation"> time-dependent Schrödinger equation</a> </p> <a href="https://publications.waset.org/abstracts/22996/dynamics-of-light-induced-current-in-1d-coupled-quantum-dots" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/22996.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">356</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3933</span> Detection of Voltage Sag and Voltage Swell in Power Quality Using Wavelet Transforms</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Nor%20Asrina%20Binti%20Ramlee">Nor Asrina Binti Ramlee</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Voltage sag, voltage swell, high-frequency noise and voltage transients are kinds of disturbances in power quality. They are also known as power quality events. Equipment used in the industry nowadays has become more sensitive to these events with the increasing complexity of equipment. This leads to the importance of distributing clean power quality to the consumer. To provide better service, the best analysis on power quality is very vital. Thus, this paper presents the events detection focusing on voltage sag and swell. The method is developed by applying time domain signal analysis using wavelet transform approach in MATLAB. Four types of mother wavelet namely Haar, Dmey, Daubechies, and Symlet are used to detect the events. This project analyzed real interrupted signal obtained from 22 kV transmission line in Skudai, Johor Bahru, Malaysia. The signals will be decomposed through the wavelet mothers. The best mother is the one that is capable to detect the time location of the event accurately. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=power%20quality" title="power quality">power quality</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20sag" title=" voltage sag"> voltage sag</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20swell" title=" voltage swell"> voltage swell</a>, <a href="https://publications.waset.org/abstracts/search?q=wavelet%20transform" title=" wavelet transform"> wavelet transform</a> </p> <a href="https://publications.waset.org/abstracts/68643/detection-of-voltage-sag-and-voltage-swell-in-power-quality-using-wavelet-transforms" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/68643.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">372</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3932</span> Coordinated Voltage Control in Radial Distribution System with Distributed Generators Using Sensitivity Analysis</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Anubhav%20Shrivastava%20Shivarudraswamy">Anubhav Shrivastava Shivarudraswamy</a>, <a href="https://publications.waset.org/abstracts/search?q=Bhat%20Lakshya"> Bhat Lakshya </a> </p> <p class="card-text"><strong>Abstract:</strong></p> Distributed generation has indeed become a major area of interest in recent years. Distributed generation can address a large number of loads in a power line and hence has better efficiency over the conventional methods. However, there are certain drawbacks associated with it, an increase in voltage being the major one. This paper addresses the voltage control at the buses for an IEEE 30 bus system by regulating reactive power. For carrying out the analysis, the suitable location for placing distributed generators (DG) is identified through load flow analysis and seeing where the voltage profile is dipping. MATLAB programming is used to regulate the voltage at all buses within +/- 5% of the base value even after the introduction of DGs. Three methods for regulation of voltage are discussed. A sensitivity based analysis is then carried out to determine the priority among the various methods listed in the paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=distributed%20generators" title="distributed generators">distributed generators</a>, <a href="https://publications.waset.org/abstracts/search?q=distributed%20system" title=" distributed system"> distributed system</a>, <a href="https://publications.waset.org/abstracts/search?q=reactive%20power" title=" reactive power"> reactive power</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20control" title=" voltage control"> voltage control</a>, <a href="https://publications.waset.org/abstracts/search?q=sensitivity%20analysis" title=" sensitivity analysis"> sensitivity analysis</a> </p> <a href="https://publications.waset.org/abstracts/28365/coordinated-voltage-control-in-radial-distribution-system-with-distributed-generators-using-sensitivity-analysis" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/28365.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">659</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=induced%20voltage&amp;page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=induced%20voltage&amp;page=3">3</a></li> <li class="page-item"><a class="page-link" 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