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href="http://service.weibo.com/share/share.php?title=IFWS%EF%BC%9A%E8%B6%85%E5%AE%BD%E7%A6%81%E5%B8%A6%E5%8D%8A%E5%AF%BC%E4%BD%93%E6%9D%90%E6%96%99%E4%B8%8E%E5%99%A8%E4%BB%B6%E6%8A%80%E6%9C%AF%E6%9C%80%E6%96%B0%E8%BF%9B%E5%B1%95&url=http%3A%2F%2Fwww.casmita.com%2Fnews%2F202302%2F14%2F11022.html&pic=" target="_blank"><i class="icon icon-weibo"></i><span>微博</span></a> <a class="share-qzone" href="https://sns.qzone.qq.com/cgi-bin/qzshare/cgi_qzshare_onekey?url=http%3A%2F%2Fwww.casmita.com%2Fnews%2F202302%2F14%2F11022.html&title=IFWS%EF%BC%9A%E8%B6%85%E5%AE%BD%E7%A6%81%E5%B8%A6%E5%8D%8A%E5%AF%BC%E4%BD%93%E6%9D%90%E6%96%99%E4%B8%8E%E5%99%A8%E4%BB%B6%E6%8A%80%E6%9C%AF%E6%9C%80%E6%96%B0%E8%BF%9B%E5%B1%95" target="_blank"><i class="icon icon-qzone"></i><span>Qzone</span></a> <a class="share-wechat"><i class="icon icon-wechat"></i><span>微信</span></a> </div> <div class="content-box"> <h1 class="title" id="title">IFWS：超宽禁带半导体材料与器件技术最新进展</h1> <div class="info"> <span style="padding-right:1em">日期：2023-02-14</span> <span style="padding-right:1em">来源：半导体产业网</span><span id="hits">阅读：502</span> </div> <div class="introduce">核心提示：以金刚石、氧化镓、氮化铝、氮化硼、石墨烯等为代表的超宽禁带半导体材料与其他先进电子材料具有更高的禁带宽度、热导率以及材料</div><div id="content"><div class="content" id="article"><p> 以金刚石、氧化镓、氮化铝、氮化硼、石墨烯等为代表的超宽禁带半导体材料与其他先进电子材料具有更高的禁带宽度、热导率以及材料稳定性，在新一代深紫外光电器件、高压大功率电力电子器件等意义重大的应用领域具有显著的优势和巨大的发展潜力，也越来越得打国内外的重视。</p> <p>由于具有载流子迁移率高、载流子饱和漂移速率大、击穿场强大等性能，金刚石是研制大功率、高温、高频等高性能半导体器件的理想材料，被行业誉为“终极半导体材料”。想要实现芯片级金刚石的工业化，需要克服提高金刚石纯度、制作大尺寸金刚石薄片等一系列系统性技术挑战。氧化镓在耐压、电流、功率、损耗等维度都有其优势，大功率、高效率电子器件还处于实验室阶段的研发，在大规模实际应用方面还有欠缺。中国已将氧化镓列入“十四五重点研发计划”。随着技术的进步，超宽禁带材料会与宽禁带半导体材料一起开拓更为广阔的应用市场。</p> <p align="justify">2023年2月7-10日，开年盛会，第八届国际第三代半导体论坛（IFWS）&第十九届中国国际半导体照明论坛（SSLCHINA）于苏州凯宾斯基大酒店胜利召开 </p> <p>本届论坛是在国家科学技术部高新技术司、国家科学技术部国际合作司、国家工业与信息化部原材料工业司、国家节能中心、国家新材料产业发展专家咨询委员会、江苏省科学技术厅、苏州市科学技术局、苏州工业园区管理委员会的大力支持下，由第三代半导体产业技术创新战略联盟（CASA）、中关村半导体照明工程研发及产业联盟（CSA）、国家第三代半导体技术创新中心（苏州）联合主办。江苏第三代半导体研究院、苏州市第三代半导体产业创新中心、苏州纳米科技发展有限公司、中国科学院苏州纳米技术与纳米仿生研究所、北京麦肯桥新材料生产力促进中心有限公司共同承办。论坛还得到了来自国内以及美国、日本、德国、瑞典、英国、意大利、波兰、澳大利亚、新加坡等国家和地区近70家组织机构、近90家行业代表性实力企业的支持。</p> <p>期间，由牛津仪器科技（上海）有限公司、苏州思体尔软件科技有限公司、江苏第三代半导体研究院协办支持的“超宽禁带半导体材料与器件“分论坛如期召开。该技术分论坛备受行业关注，在上、下两场中主题报告十分丰富，来自国内外科研院所与代表企业的专家们带来前沿报告，分享超宽禁带及其他新型半导体材料与器件领域的最新进展。 </p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174352411.jpg" alt="张进成1" width="600" height="400" /></p> <p style="text-align: center;">西安电子科技大学副校长、教授张进成做了题为“氧化镓功率器件耐压和功率优值的研究”的主题报告</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174417431.jpg" alt="黄文海" width="600" height="400" /></p> <p style="text-align: center;">香港科技大学副教授黄文海做了题为“横向和纵向β-Ga2O3功率MOSFET的十年进展”的主题报告</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174440231.jpg" alt="王钢" width="600" height="400" /></p> <p style="text-align: center;">中山大学佛山研究院院长，中山大学半导体照明材料及器件国家地方联合工程实验室主任、教授王钢做了题为“新型宽禁带压电半导体材料ε-Ga2O3及其在射频谐振器中的应用”的主题报告</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174458891.jpg" alt="韩根全" width="600" height="400" /></p> <p style="text-align: center;">西安电子科技大学教授韩根全做了题为“氧化镓异质结功率晶体管”的主题报告</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174517451.jpg" alt="刘新风" width="600" height="400" /></p> <p style="text-align: center;">国家纳米科学中心研究员,中科院纳米标准与检测重点实验室副主任刘新风做了题为“利用泵浦-探测瞬态反射显微技术测定立方砷化硼的高双极性迁移率”的主题报告</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174541791.jpg" alt="宋柏" width="600" height="400" /></p> <p style="text-align: center;">北京大学工学院特聘研究员宋柏做了题为“超高热导率立方砷化硼和氮化硼晶体”的主题报告</p> <p style="text-align: center;"> </p> <p style="text-align: center;"><strong>中国科学院半导体所研究员张兴旺做了题为“超宽禁带六方氮化硼二维原子晶体及其光电器件”的主题报告</strong></p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174627741.jpg" alt="卢红亮1" width="600" height="400" /></p> <p style="text-align: center;">复旦大学微电子学院教授卢红亮做了题为“Ga2O3光电二极管的可控制备及应用“的主题报告</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174651481.jpg" alt="何云斌2" width="600" height="400" /></p> <p>湖北大学教授何云斌带来了MgO（100）作为异质外延生长的载体高质量的β-Ga2O3薄膜和相关高灵敏度日盲紫外光电探测器的研究进展与成果。报告显示，自驱动PD在Au和Al之间表现出整流行为电极，BaTiO3极化可以调节自驱动PD性能。 </p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174708141.jpg" alt="汪正鹏" width="600" height="400" /></p> <p>南京大学的汪正鹏带来了题为”NiO/Ga2O3异质结二极管中深能级陷阱和载流子输运机制研究“的主题报告，报告分析了β-Ga2O3中陷阱的能级和空间分布，NiO/Ga2O3异质结二极管中陷阱介导的双极载流子输运。报告指出，β-Ga2O3中陷阱的空间分布已被揭示，因为E2和E2*是体陷阱，E3是近表面陷阱（<180nm）。温度相关电流-电压特性的定量建模表明，在前向亚阈值传导区域中，由激活能为0.64eV的多数载流子陷阱态介导的改进的Shockley Read Hall（SRH）复合主导了陷阱辅助隧穿过程。高反向偏压下的泄漏机制由势垒高度为0.75eV的β-Ga2O3体阱的Poole-Frenkel发射控制，这通过等温电容瞬态光谱分析确定了能量水平为EC−0.75 eV的大多数体阱来支持。</p> <p> </p> <p style="text-align: center;"><strong>哈尔滨工业大学教授朱嘉琦做了题为”单晶金刚石肖特基半导体器件研究“的主题报告</strong></p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174758221.jpg" alt="冯志红" width="600" height="400" /></p> <p style="text-align: center;">中国电科首席科学家、中国电科13所研究员、专用集成电路国家级重点实验室常务副主任冯志红做了题为”金刚石微波功率器件进展“的主题报告</p> <p style="text-align: center;"> </p> <p style="text-align: center;"><strong>日本国立物质材料研究所研究员廖梅勇做了题为”半导体金刚石n型电子器件和MEMS“的主题报告</strong></p> <p style="text-align: center;"><strong><img src="http://www.casmita.com/file/upload/202303/07/174845221.jpg" alt="张金风" width="600" height="400" /></strong></p> <p>西安电子科技大学教授张金风带来了题为”MPCVD法金刚石同质外延生长及MOS器件技术”的主题报告，介绍了CVD金刚石的生长与表征，金刚石MOS器件的模拟、制备和表征的研究成果，报告指出，西电大学已经实现了高纯度晶体、高质量厚晶体和英寸尺寸马赛克晶片的生长，并且有少量供应。为了将生长的板材变成实用的基材，中国的研究人员仍需在开发高效、高水平的金刚石抛光工艺，特别是大尺寸加工方面付出巨大努力。C-H金刚石MOSFET仍然是主流的金刚石电子器件结构。低移动性限制了设备在频率、静态功耗和微波功率方面的性能。但黎明即将到来，将2DHG在C-H金刚石表面的迁移率提高几倍，因此，类似GaN HEMT的开发方式可能用于金刚石MOSFET。西电大学制造了具有各种栅极电介质、高频器件、常闭器件和共源共栅逆变器的金刚石MOSFET，并取得了相当好的性能。高性能金刚石FET的研究仍在进行中。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174858881.jpg" alt="张赫之" width="600" height="400" /></p> <p>大连理工大学副教授张赫之带来了题为”在高Al组分AlGaO/蓝宝石基板上生长高质量β-Ga2O3厚膜的研究“的主题报告，报告介绍了高铝组分AlGaO缓冲层的制备， AlGaO/sapphire基板快速异质外延Ga2O3 的研究进展与成果，研究展望了同质衬底生长以及生长条件持续优化，AlGaO/sapphire上生长(001)、(010) β-Ga2O3厚膜，碳还原法生长Sn掺杂β-Ga2O3厚膜，其他异质衬底生长的研究（硅基，碳化硅）。</p> <p style="text-align: center;"><img src="http://www.casmita.com/file/upload/202303/07/174912221.jpg" alt="李晓航" width="600" height="400" /></p> <p style="text-align: center;">沙特阿卜杜拉国王科技大学副教授李晓航做了题为”面向柔性和垂直电子器件的外延氧化镓薄膜“的主题报告</p> 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