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transistor</title> <meta name="description" content="Search results for: MESFET transistor"> <meta name="keywords" content="MESFET transistor"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="MESFET transistor"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 99</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: MESFET transistor</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">99</span> Modeling the Transport of Charge Carriers in the Active Devices MESFET Based of GaInP by the Monte Carlo Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=N.%20Massoum">N. Massoum</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Guen.%20Bouazza"> A. Guen. Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouazza"> B. Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20El%20Ouchdi"> A. El Ouchdi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Monte%20Carlo%20simulation" title="Monte Carlo simulation">Monte Carlo simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=transient%20electron%20transport" title=" transient electron transport"> transient electron transport</a>, <a href="https://publications.waset.org/abstracts/search?q=MESFET%20device" title=" MESFET device"> MESFET device</a>, <a href="https://publications.waset.org/abstracts/search?q=GaInP" title=" GaInP"> GaInP</a> </p> <a href="https://publications.waset.org/abstracts/19250/modeling-the-transport-of-charge-carriers-in-the-active-devices-mesfet-based-of-gainp-by-the-monte-carlo-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19250.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">419</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">98</span> Electromagnetic Modeling of a MESFET Transistor Using the Moments Method Combined with Generalised Equivalent Circuit Method</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Takoua%20Soltani">Takoua Soltani</a>, <a href="https://publications.waset.org/abstracts/search?q=Imen%20Soltani"> Imen Soltani</a>, <a href="https://publications.waset.org/abstracts/search?q=Taoufik%20Aguili"> Taoufik Aguili</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The communications' and radar systems' demands give rise to new developments in the domain of active integrated antennas (AIA) and arrays. The main advantages of AIA arrays are the simplicity of fabrication, low cost of manufacturing, and the combination between free space power and the scanner without a phase shifter. The integrated active antenna modeling is the coupling between the electromagnetic model and the transport model that will be affected in the high frequencies. Global modeling of active circuits is important for simulating EM coupling, interaction between active devices and the EM waves, and the effects of EM radiation on active and passive components. The current review focuses on the modeling of the active element which is a MESFET transistor immersed in a rectangular waveguide. The proposed EM analysis is based on the Method of Moments combined with the Generalised Equivalent Circuit method (MOM-GEC). The Method of Moments which is the most common and powerful software as numerical techniques have been used in resolving the electromagnetic problems. In the class of numerical techniques, MOM is the dominant technique in solving of Maxwell and Transport’s integral equations for an active integrated antenna. In this situation, the equivalent circuit is introduced to the development of an integral method formulation based on the transposition of field problems in a Generalised equivalent circuit that is simpler to treat. The method of Generalised Equivalent Circuit (MGEC) was suggested in order to represent integral equations circuits that describe the unknown electromagnetic boundary conditions. The equivalent circuit presents a true electric image of the studied structures for describing the discontinuity and its environment. The aim of our developed method is to investigate the antenna parameters such as the input impedance and the current density distribution and the electric field distribution. In this work, we propose a global EM modeling of the MESFET AsGa transistor using an integral method. We will begin by describing the modeling structure that allows defining an equivalent EM scheme translating the electromagnetic equations considered. Secondly, the projection of these equations on common-type test functions leads to a linear matrix equation where the unknown variable represents the amplitudes of the current density. Solving this equation resulted in providing the input impedance, the distribution of the current density and the electric field distribution. From electromagnetic calculations, we were able to present the convergence of input impedance for different test function number as a function of the guide mode numbers. This paper presents a pilot study to find the answer to map out the variation of the existing current evaluated by the MOM-GEC. The essential improvement of our method is reducing computing time and memory requirements in order to provide a sufficient global model of the MESFET transistor. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=active%20integrated%20antenna" title="active integrated antenna">active integrated antenna</a>, <a href="https://publications.waset.org/abstracts/search?q=current%20density" title=" current density"> current density</a>, <a href="https://publications.waset.org/abstracts/search?q=input%20impedance" title=" input impedance"> input impedance</a>, <a href="https://publications.waset.org/abstracts/search?q=MESFET%20transistor" title=" MESFET transistor"> MESFET transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=MOM-GEC%20method" title=" MOM-GEC method"> MOM-GEC method</a> </p> <a href="https://publications.waset.org/abstracts/82843/electromagnetic-modeling-of-a-mesfet-transistor-using-the-moments-method-combined-with-generalised-equivalent-circuit-method" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/82843.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">198</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">97</span> Study of Transport in Electronic Devices with Stochastic Monte Carlo Method: Modeling and Simulation along with Submicron Gate (Lg=0.5um)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=N.%20Massoum">N. Massoum</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouazza"> B. Bouazza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we have developed a numerical simulation model to describe the electrical properties of GaInP MESFET with submicron gate (Lg = 0.5 µm). This model takes into account the three-dimensional (3D) distribution of the load in the short channel and the law effect of mobility as a function of electric field. Simulation software based on a stochastic method such as Monte Carlo has been established. The results are discussed and compared with those of the experiment. The result suggests experimentally that, in a very small gate length in our devices (smaller than 40 nm), short-channel tunneling explains the degradation of transistor performance, which was previously enhanced by velocity overshoot. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Monte%20Carlo%20simulation" title="Monte Carlo simulation">Monte Carlo simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=transient%20electron%20transport" title=" transient electron transport"> transient electron transport</a>, <a href="https://publications.waset.org/abstracts/search?q=MESFET%20device" title=" MESFET device"> MESFET device</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation%20software" title=" simulation software"> simulation software</a> </p> <a href="https://publications.waset.org/abstracts/19931/study-of-transport-in-electronic-devices-with-stochastic-monte-carlo-method-modeling-and-simulation-along-with-submicron-gate-lg05um" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19931.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">513</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">96</span> Current of Drain for Various Values of Mobility in the Gaas Mesfet</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=S.%20Belhour">S. Belhour</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20K.%20Ferouani"> A. K. Ferouani</a>, <a href="https://publications.waset.org/abstracts/search?q=C.%20Azizi"> C. Azizi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In recent years, a considerable effort (experience, numerical simulation, and theoretical prediction models) has characterised by high efficiency and low cost. Then an improved physics analytical model for simulating is proposed. The performance of GaAs MESFETs has been developed for use in device design for high frequency. This model is based on mathematical analysis, and a new approach for the standard model is proposed, this approach allowed to conceive applicable model for MESFET’s operating in the turn-one or pinch-off region and valid for the short-channel and the long channel MESFET’s in which the two dimensional potential distribution contributed by the depletion layer under the gate is obtained by conventional approximation. More ever, comparisons between the analytical models with different values of mobility are proposed, and a good agreement is obtained. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=analytical" title="analytical">analytical</a>, <a href="https://publications.waset.org/abstracts/search?q=gallium%20arsenide" title=" gallium arsenide"> gallium arsenide</a>, <a href="https://publications.waset.org/abstracts/search?q=MESFET" title=" MESFET"> MESFET</a>, <a href="https://publications.waset.org/abstracts/search?q=mobility" title=" mobility"> mobility</a>, <a href="https://publications.waset.org/abstracts/search?q=models" title=" models"> models</a> </p> <a href="https://publications.waset.org/abstracts/160245/current-of-drain-for-various-values-of-mobility-in-the-gaas-mesfet" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/160245.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">74</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">95</span> A Fault-Tolerant Full Adder in Double Pass CMOS Transistor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelmonaem%20Ayachi">Abdelmonaem Ayachi</a>, <a href="https://publications.waset.org/abstracts/search?q=Belgacem%20Hamdi"> Belgacem Hamdi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=digital%20electronics" title="digital electronics">digital electronics</a>, <a href="https://publications.waset.org/abstracts/search?q=integrated%20circuits" title=" integrated circuits"> integrated circuits</a>, <a href="https://publications.waset.org/abstracts/search?q=full%20adder" title=" full adder"> full adder</a>, <a href="https://publications.waset.org/abstracts/search?q=32nm%20CMOS%20tehnology" title=" 32nm CMOS tehnology"> 32nm CMOS tehnology</a>, <a href="https://publications.waset.org/abstracts/search?q=double%20pass%20transistor%20technology" title=" double pass transistor technology"> double pass transistor technology</a>, <a href="https://publications.waset.org/abstracts/search?q=fault%20toleance" title=" fault toleance"> fault toleance</a>, <a href="https://publications.waset.org/abstracts/search?q=self-checking" title=" self-checking"> self-checking</a> </p> <a href="https://publications.waset.org/abstracts/40794/a-fault-tolerant-full-adder-in-double-pass-cmos-transistor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/40794.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">346</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">94</span> Ultrafast Transistor Laser Containing Graded Index Separate Confinement Heterostructure</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mohammad%20Hosseini">Mohammad Hosseini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Ultrafast transistor laser investigated here has the graded index separate confinement heterostructure (GRIN-SCH) in its base region. Resonance-free optical frequency response with -3dB bandwidth of more than 26 GHz has been achieved for a single quantum well transistor laser by using graded index layers of AlξGa1-ξAs (ξ: 0.1→0) on the left side of the quantum well and AlξGa1-ξAs (ξ: 0.05→0) in the right side of quantum well. All required parameters, including quantum well and base transit time, optical confinement factor and spontaneous recombination lifetime, have been calculated using a self-consistent charge control model. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=transistor%20laser" title="transistor laser">transistor laser</a>, <a href="https://publications.waset.org/abstracts/search?q=ultrafast" title=" ultrafast"> ultrafast</a>, <a href="https://publications.waset.org/abstracts/search?q=GRIN-SCH" title=" GRIN-SCH"> GRIN-SCH</a>, <a href="https://publications.waset.org/abstracts/search?q=-3db%20optical%20bandwidth" title=" -3db optical bandwidth"> -3db optical bandwidth</a>, <a href="https://publications.waset.org/abstracts/search?q=Al%CE%BEGa1-%CE%BEAs" title=" AlξGa1-ξAs"> AlξGa1-ξAs</a> </p> <a href="https://publications.waset.org/abstracts/163022/ultrafast-transistor-laser-containing-graded-index-separate-confinement-heterostructure" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/163022.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">154</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">93</span> Transient Performance Analysis of Gate Inside Junctionless Transistor (GI-JLT)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sangeeta%20Singh">Sangeeta Singh</a>, <a href="https://publications.waset.org/abstracts/search?q=Pankaj%20Kumar"> Pankaj Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=P.%20N.%20Kondekar"> P. N. Kondekar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, the transient device performance analysis of n-type Gate Inside Junctionless Transistor (GIJLT)has been evaluated. 3-D Bohm Quantum Potential (BQP)transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor(TGF) and unity gain cut-off frequency (fT) and subthreshold slope (SS) of the GI-JLT and Gate-all-around junctionless transistor(GAA-JLT) have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=gate-inside%20junctionless%20transistor%20GI-JLT" title="gate-inside junctionless transistor GI-JLT">gate-inside junctionless transistor GI-JLT</a>, <a href="https://publications.waset.org/abstracts/search?q=gate-all-around%20junctionless%20transistor%20GAA-JLT" title=" gate-all-around junctionless transistor GAA-JLT"> gate-all-around junctionless transistor GAA-JLT</a>, <a href="https://publications.waset.org/abstracts/search?q=propagation%20delay" title=" propagation delay"> propagation delay</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20delay%20product" title=" power delay product"> power delay product</a> </p> <a href="https://publications.waset.org/abstracts/9662/transient-performance-analysis-of-gate-inside-junctionless-transistor-gi-jlt" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9662.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">577</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">92</span> An Approach for Modeling CMOS Gates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Spyridon%20Nikolaidis">Spyridon Nikolaidis</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CMOS%20gate%20modeling" title="CMOS gate modeling">CMOS gate modeling</a>, <a href="https://publications.waset.org/abstracts/search?q=inverter%20modeling" title=" inverter modeling"> inverter modeling</a>, <a href="https://publications.waset.org/abstracts/search?q=transistor%20current%20mode" title=" transistor current mode"> transistor current mode</a>, <a href="https://publications.waset.org/abstracts/search?q=timing%20model" title=" timing model "> timing model </a> </p> <a href="https://publications.waset.org/abstracts/16511/an-approach-for-modeling-cmos-gates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/16511.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">423</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">91</span> Simulation of High Performance Nanoscale Partially Depleted SOI n-MOSFET Transistors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Rahou">Fatima Zohra Rahou</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Guen%20Bouazza"> A. Guen Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouazza"> B. Bouazza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=SOI%20technology" title="SOI technology">SOI technology</a>, <a href="https://publications.waset.org/abstracts/search?q=PDSOI%20MOSFET" title=" PDSOI MOSFET"> PDSOI MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=FDSOI%20MOSFET" title=" FDSOI MOSFET"> FDSOI MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=kink%20effect" title=" kink effect"> kink effect</a> </p> <a href="https://publications.waset.org/abstracts/61667/simulation-of-high-performance-nanoscale-partially-depleted-soi-n-mosfet-transistors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/61667.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">258</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">90</span> Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100 nm Technologies</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zina%20Saheb">Zina Saheb</a>, <a href="https://publications.waset.org/abstracts/search?q=Ezz%20El-Masry"> Ezz El-Masry</a> </p> <p class="card-text"><strong>Abstract:</strong></p> As CMOS technology scaling down, Silicon oxide thickness (SiO2) become very thin (few Nano meters). When SiO2 is less than 3nm, gate direct tunneling (DT) leakage current becomes a dormant problem that impacts the transistor performance. Floating gate MOSFET (FGMOSFET) has been used in many low-voltage and low-power applications. Most of the available simulation models of FGMOSFET for analog circuit design does not account for gate DT current and there is no accurate analysis for the gate DT. It is a crucial to use an accurate mode in order to get a realistic simulation result that account for that DT impact on FGMOSFET performance effectively. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CMOS%20transistor" title="CMOS transistor">CMOS transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=direct-tunneling%20current" title=" direct-tunneling current"> direct-tunneling current</a>, <a href="https://publications.waset.org/abstracts/search?q=floating-gate" title=" floating-gate"> floating-gate</a>, <a href="https://publications.waset.org/abstracts/search?q=gate-leakage%20current" title=" gate-leakage current"> gate-leakage current</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation%20model" title=" simulation model"> simulation model</a> </p> <a href="https://publications.waset.org/abstracts/30655/practical-simulation-model-of-floating-gate-mos-transistor-in-sub-100-nm-technologies" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30655.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">529</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">89</span> Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Nur%20Syarafina%20Binti%20Othman">Nur Syarafina Binti Othman</a>, <a href="https://publications.waset.org/abstracts/search?q=Tsubasa%20Jindo"> Tsubasa Jindo</a>, <a href="https://publications.waset.org/abstracts/search?q=Makato%20Yamada"> Makato Yamada</a>, <a href="https://publications.waset.org/abstracts/search?q=Miho%20Tsuyama"> Miho Tsuyama</a>, <a href="https://publications.waset.org/abstracts/search?q=Hitoshi%20Nakano"> Hitoshi Nakano</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=high%20voltage" title="high voltage">high voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=IGBT" title=" IGBT"> IGBT</a>, <a href="https://publications.waset.org/abstracts/search?q=solid%20state%20switch" title=" solid state switch"> solid state switch</a>, <a href="https://publications.waset.org/abstracts/search?q=bipolar%20transistor" title=" bipolar transistor"> bipolar transistor</a> </p> <a href="https://publications.waset.org/abstracts/13067/fast-high-voltage-solid-state-switch-using-insulated-gate-bipolar-transistor-for-discharge-pumped-lasers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/13067.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">552</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">88</span> Design and Study of a Low Power High Speed 8 Transistor Based Full Adder Using Multiplexer and XOR Gates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Biswarup%20Mukherjee">Biswarup Mukherjee</a>, <a href="https://publications.waset.org/abstracts/search?q=Aniruddha%20Ghoshal"> Aniruddha Ghoshal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we propose a new technique for implementing a low power high speed full adder using 8 transistors. Full adder circuits are used comprehensively in Application Specific Integrated Circuits (ASICs). Thus it is desirable to have high speed operation for the sub components. The explored method of implementation achieves a high speed low power design for the full adder. Simulated results indicate the superior performance of the proposed technique over conventional 28 transistor CMOS full adder. Detailed comparison of simulated results for the conventional and present method of implementation is presented. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=high%20speed%20low%20power%20full%20adder" title="high speed low power full adder">high speed low power full adder</a>, <a href="https://publications.waset.org/abstracts/search?q=2-T%20MUX" title=" 2-T MUX"> 2-T MUX</a>, <a href="https://publications.waset.org/abstracts/search?q=3-T%20XOR" title=" 3-T XOR"> 3-T XOR</a>, <a href="https://publications.waset.org/abstracts/search?q=8-T%20FA" title=" 8-T FA"> 8-T FA</a>, <a href="https://publications.waset.org/abstracts/search?q=pass%20transistor%20logic" title=" pass transistor logic"> pass transistor logic</a>, <a href="https://publications.waset.org/abstracts/search?q=CMOS%20%28complementary%20metal%20oxide%20semiconductor%29" title=" CMOS (complementary metal oxide semiconductor)"> CMOS (complementary metal oxide semiconductor)</a> </p> <a href="https://publications.waset.org/abstracts/21932/design-and-study-of-a-low-power-high-speed-8-transistor-based-full-adder-using-multiplexer-and-xor-gates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/21932.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">348</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">87</span> Fabrication of Cylindrical Silicon Nanowire-Embedded Field Effect Transistor Using Al2O3 Transfer Layer</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sang%20Hoon%20Lee">Sang Hoon Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae%20Il%20Lee"> Tae Il Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Su%20Jeong%20Lee"> Su Jeong Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Jae%20Min%20Myoung"> Jae Min Myoung</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V•s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Al2O3%20sacrificial%20transfer%20layer" title="Al2O3 sacrificial transfer layer">Al2O3 sacrificial transfer layer</a>, <a href="https://publications.waset.org/abstracts/search?q=cylindrical%20silicon%20nanowires" title=" cylindrical silicon nanowires"> cylindrical silicon nanowires</a>, <a href="https://publications.waset.org/abstracts/search?q=dielectrophorestic%20alignment" title=" dielectrophorestic alignment"> dielectrophorestic alignment</a>, <a href="https://publications.waset.org/abstracts/search?q=field%20effect%20transistor" title=" field effect transistor"> field effect transistor</a> </p> <a href="https://publications.waset.org/abstracts/19299/fabrication-of-cylindrical-silicon-nanowire-embedded-field-effect-transistor-using-al2o3-transfer-layer" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19299.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">457</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">86</span> Designing Equivalent Model of Floating Gate Transistor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Birinderjit%20Singh%20Kalyan">Birinderjit Singh Kalyan</a>, <a href="https://publications.waset.org/abstracts/search?q=Inderpreet%20Kaur"> Inderpreet Kaur</a>, <a href="https://publications.waset.org/abstracts/search?q=Balwinder%20Singh%20Sohi"> Balwinder Singh Sohi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, an equivalent model for floating gate transistor has been proposed. Using the floating gate voltage value, capacitive coupling coefficients has been found at different bias conditions. The amount of charge present on the gate has been then calculated using the transient models of hot electron programming and Fowler-Nordheim Tunnelling. The proposed model can be extended to the transient conditions as well. The SPICE equivalent model is designed and current-voltage characteristics and Transfer characteristics are comparatively analysed. The dc current-voltage characteristics, as well as dc transfer characteristics, have been plotted for an FGMOS with W/L=0.25μm/0.375μm, the inter-poly capacitance of 0.8fF for both programmed and erased states. The Comparative analysis has been made between the present model and capacitive coefficient coupling methods which were already available. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=FGMOS" title="FGMOS">FGMOS</a>, <a href="https://publications.waset.org/abstracts/search?q=floating%20gate%20transistor" title=" floating gate transistor"> floating gate transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=capacitive%20coupling%20coefficient" title=" capacitive coupling coefficient"> capacitive coupling coefficient</a>, <a href="https://publications.waset.org/abstracts/search?q=SPICE%20model" title=" SPICE model"> SPICE model</a> </p> <a href="https://publications.waset.org/abstracts/30822/designing-equivalent-model-of-floating-gate-transistor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30822.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">545</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">85</span> Transparent and Solution Processable Low Contact Resistance SWCNT/AZONP Bilayer Electrodes for Sol-Gel Metal Oxide Thin Film Transistor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Su%20Jeong%20Lee">Su Jeong Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae%20Il%20Lee"> Tae Il Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung%20Han%20Kim"> Jung Han Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chul-Hong%20Kim"> Chul-Hong Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Gee%20Sung%20Chae"> Gee Sung Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jae-Min%20Myoung"> Jae-Min Myoung</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V∙s at 250 °C. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=single-walled%20carbon%20nanotube%20%28SWCNT%29" title="single-walled carbon nanotube (SWCNT)">single-walled carbon nanotube (SWCNT)</a>, <a href="https://publications.waset.org/abstracts/search?q=Al-doped%20ZnO%20%28AZO%29%20nanoparticle" title=" Al-doped ZnO (AZO) nanoparticle"> Al-doped ZnO (AZO) nanoparticle</a>, <a href="https://publications.waset.org/abstracts/search?q=contact%20resistance" title=" contact resistance"> contact resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=thin-film%20transistor%20%28TFT%29" title=" thin-film transistor (TFT) "> thin-film transistor (TFT) </a> </p> <a href="https://publications.waset.org/abstracts/19325/transparent-and-solution-processable-low-contact-resistance-swcntazonp-bilayer-electrodes-for-sol-gel-metal-oxide-thin-film-transistor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/19325.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">531</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">84</span> Analytical Terahertz Characterization of In0.53Ga0.47As Transistors and Homogenous Diodes</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Abdelmadjid%20Mammeri">Abdelmadjid Mammeri</a>, <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Mahi"> Fatima Zohra Mahi</a>, <a href="https://publications.waset.org/abstracts/search?q=Luca%20Varani"> Luca Varani</a>, <a href="https://publications.waset.org/abstracts/search?q=H.%20Marinchoi"> H. Marinchoi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We propose an analytical model for the admittance and the noise calculations of the InGaAs transistor and diode. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The frequency-dependent of the small-signal admittance response is determined by the total currents and the potentials matrix relation between the gate and the drain terminals. The noise is evaluated by using the real part of the transistor/diode admittance under a small-signal perturbation. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand; to control the appearance of the plasma resonances, and on other hand; can give significant information about the noise frequency dependence in the InGaAs transistor and diode. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20transistors" title="InGaAs transistors">InGaAs transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=InGaAs%20diode" title=" InGaAs diode"> InGaAs diode</a>, <a href="https://publications.waset.org/abstracts/search?q=admittance" title=" admittance"> admittance</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20peaks" title=" resonant peaks"> resonant peaks</a>, <a href="https://publications.waset.org/abstracts/search?q=plasma%20waves" title=" plasma waves"> plasma waves</a>, <a href="https://publications.waset.org/abstracts/search?q=analytical%20model" title=" analytical model"> analytical model</a> </p> <a href="https://publications.waset.org/abstracts/45170/analytical-terahertz-characterization-of-in053ga047as-transistors-and-homogenous-diodes" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/45170.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">316</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">83</span> Performance Analysis of BPJLT with Different Gate and Spacer Materials</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Porag%20Jyoti%20Ligira">Porag Jyoti Ligira</a>, <a href="https://publications.waset.org/abstracts/search?q=Gargi%20Khanna"> Gargi Khanna</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=spacer" title="spacer">spacer</a>, <a href="https://publications.waset.org/abstracts/search?q=BPJLT" title=" BPJLT"> BPJLT</a>, <a href="https://publications.waset.org/abstracts/search?q=high-k" title=" high-k"> high-k</a>, <a href="https://publications.waset.org/abstracts/search?q=double%20gate" title=" double gate"> double gate</a> </p> <a href="https://publications.waset.org/abstracts/11775/performance-analysis-of-bpjlt-with-different-gate-and-spacer-materials" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/11775.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">429</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">82</span> Characteristics of Silicon Integrated Vertical Carbon Nanotube Field-Effect Transistors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jingqi%20Li">Jingqi Li</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A new vertical carbon nanotube field effect transistor (CNTFET) has been developed. The source, drain and gate are vertically stacked in this structure. The carbon nanotubes are put on the side wall of the vertical stack. Unique transfer characteristics which depend on both silicon type and the sign of drain voltage have been observed in silicon integrated CNTFETs. The significant advantage of this CNTFET is that the short channel of the transistor can be fabricated without using complicate lithography technique. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=carbon%20nanotubes" title="carbon nanotubes">carbon nanotubes</a>, <a href="https://publications.waset.org/abstracts/search?q=field-effect%20transistors" title=" field-effect transistors"> field-effect transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=electrical%20property" title=" electrical property"> electrical property</a>, <a href="https://publications.waset.org/abstracts/search?q=short%20channel%20fabrication" title=" short channel fabrication"> short channel fabrication</a> </p> <a href="https://publications.waset.org/abstracts/82705/characteristics-of-silicon-integrated-vertical-carbon-nanotube-field-effect-transistors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/82705.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">361</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">81</span> PSRR Enhanced LDO Regulator Using Noise Sensing Circuit</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Min-ju%20Kwon">Min-ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Chae-won%20Kim"> Chae-won Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-yun%20Seo"> Jeong-yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-guk%20Chae"> Hee-guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-seo%20Koo"> Yong-seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=LDO%20regulator" title="LDO regulator">LDO regulator</a>, <a href="https://publications.waset.org/abstracts/search?q=noise%20sensing%20circuit" title=" noise sensing circuit"> noise sensing circuit</a>, <a href="https://publications.waset.org/abstracts/search?q=current%20reference" title=" current reference"> current reference</a>, <a href="https://publications.waset.org/abstracts/search?q=pass%20transistor" title=" pass transistor"> pass transistor</a> </p> <a href="https://publications.waset.org/abstracts/78192/psrr-enhanced-ldo-regulator-using-noise-sensing-circuit" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/78192.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">283</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">80</span> Future of Nanotechnology in Digital MacDraw</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Pejman%20Hosseinioun">Pejman Hosseinioun</a>, <a href="https://publications.waset.org/abstracts/search?q=Abolghasem%20Ghasempour"> Abolghasem Ghasempour</a>, <a href="https://publications.waset.org/abstracts/search?q=Elham%20Gholami"> Elham Gholami</a>, <a href="https://publications.waset.org/abstracts/search?q=Hamed%20Sarbazi"> Hamed Sarbazi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Considering the development in global semiconductor technology, it is anticipated that gadgets such as diodes and resonant transistor tunnels (RTD/RTT), Single electron transistors (SET) and quantum cellular automata (QCA) will substitute CMOS (Complementary Metallic Oxide Semiconductor) gadgets in many applications. Unfortunately, these new technologies cannot disembark the common Boolean logic efficiently and are only appropriate for liminal logic. Therefor there is no doubt that with the development of these new gadgets it is necessary to find new MacDraw technologies which are compatible with them. Resonant transistor tunnels (RTD/RTT) and circuit MacDraw with enhanced computing abilities are candida for accumulating Nano criterion in the future. Quantum cellular automata (QCA) are also advent Nano technological gadgets for electrical circuits. Advantages of these gadgets such as higher speed, smaller dimensions, and lower consumption loss are of great consideration. QCA are basic gadgets in manufacturing gates, fuses and memories. Regarding the complex Nano criterion physical entity, circuit designers can focus on logical and constructional design to decrease complication in MacDraw. Moreover Single electron technology (SET) is another noteworthy gadget considered in Nano technology. This article is a survey in future of Nano technology in digital MacDraw. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=nano%20technology" title="nano technology">nano technology</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20transistor%20tunnels" title=" resonant transistor tunnels"> resonant transistor tunnels</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum%20cellular%20automata" title=" quantum cellular automata"> quantum cellular automata</a>, <a href="https://publications.waset.org/abstracts/search?q=semiconductor" title=" semiconductor"> semiconductor</a> </p> <a href="https://publications.waset.org/abstracts/37247/future-of-nanotechnology-in-digital-macdraw" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/37247.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">265</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">79</span> Carbon Nanotube Field Effect Transistor - a Review</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=P.%20Geetha">P. Geetha</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20S.%20D.%20Wahida%20Banu"> R. S. D. Wahida Banu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The crowning advances in Silicon based electronic technology have dominated the computation world for the past decades. The captivating performance of Si devices lies in sustainable scaling down of the physical dimensions, by that increasing device density and improved performance. But, the fundamental limitations due to physical, technological, economical, and manufacture features restrict further miniaturization of Si based devices. The pit falls are due to scaling down of the devices such as process variation, short channel effects, high leakage currents, and reliability concerns. To fix the above-said problems, it is needed either to follow a new concept that will manage the current hitches or to support the available concept with different materials. The new concept is to design spintronics, quantum computation or two terminal molecular devices. Otherwise, presently used well known three terminal devices can be modified with different materials that suits to address the scaling down difficulties. The first approach will occupy in the far future since it needs considerable effort; the second path is a bright light towards the travel. Modelling paves way to know not only the current-voltage characteristics but also the performance of new devices. So, it is desirable to model a new device of suitable gate control and project the its abilities towards capability of handling high current, high power, high frequency, short delay, and high velocity with excellent electronic and optical properties. Carbon nanotube became a thriving material to replace silicon in nano devices. A well-planned optimized utilization of the carbon material leads to many more advantages. The unique nature of this organic material allows the recent developments in almost all fields of applications from an automobile industry to medical science, especially in electronics field-on which the automation industry depends. More research works were being done in this area. This paper reviews the carbon nanotube field effect transistor with various gate configurations, number of channel element, CNT wall configurations and different modelling techniques. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=array%20of%20channels" title="array of channels">array of channels</a>, <a href="https://publications.waset.org/abstracts/search?q=carbon%20nanotube%20field%20effect%20transistor" title=" carbon nanotube field effect transistor"> carbon nanotube field effect transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=double%20gate%20transistor" title=" double gate transistor"> double gate transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=gate%20wrap%20around%20transistor" title=" gate wrap around transistor"> gate wrap around transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=modelling" title=" modelling"> modelling</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-walled%20CNT" title=" multi-walled CNT"> multi-walled CNT</a>, <a href="https://publications.waset.org/abstracts/search?q=single-walled%20CNT" title=" single-walled CNT"> single-walled CNT</a> </p> <a href="https://publications.waset.org/abstracts/26953/carbon-nanotube-field-effect-transistor-a-review" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/26953.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">325</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">78</span> 3D Simulation and Modeling of Magnetic-Sensitive on n-type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DGMOSFET)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Kessi">M. Kessi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We investigated the effect of the magnetic field on carrier transport phenomena in the transistor channel region of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This explores the Lorentz force and basic physical properties of solids exposed to a constant external magnetic field. The magnetic field modulates the electrons and potential distribution in the case of silicon Tunnel FETs. This modulation shows up in the device's external electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), the threshold voltage (VTH), the magneto-transconductance (gm) and the output magneto-conductance (gDS) of Tunnel FET. Moreover, the channel doping concentration and potential distribution are obtained using the numerical method by solving Poisson’s transport equation in 3D modules semiconductor magnetic sensors available in Silvaco TCAD tools. The numerical simulations of the magnetic nano-sensors are relatively new. In this work, we present the results of numerical simulations based on 3D magnetic sensors. The results show excellent accuracy comportment and good agreement compared with that obtained in the experimental study of MOSFETs technology. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=single-gate%20MOSFET" title="single-gate MOSFET">single-gate MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=magnetic%20field" title=" magnetic field"> magnetic field</a>, <a href="https://publications.waset.org/abstracts/search?q=hall%20field" title=" hall field"> hall field</a>, <a href="https://publications.waset.org/abstracts/search?q=Lorentz%20force" title=" Lorentz force"> Lorentz force</a> </p> <a href="https://publications.waset.org/abstracts/142674/3d-simulation-and-modeling-of-magnetic-sensitive-on-n-type-double-gate-metal-oxide-semiconductor-field-effect-transistor-dgmosfet" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/142674.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">181</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">77</span> Design and Modelling of Ge/GaAs Hetero-structure Bipolar Transistor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Samson%20Mil%27shtein">Samson Mil'shtein</a>, <a href="https://publications.waset.org/abstracts/search?q=Dhawal%20N.%20Asthana"> Dhawal N. Asthana</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The presented heterostructure n-p-n bipolar transistor is comprised of Ge/GaAs heterojunctions consisting of 0.15µm thick emitter and 0.65µm collector junctions. High diffusivity of carriers in GaAs base was major motivation of current design. We avoided grading of the base which is common in heterojunction bipolar transistors, in order to keep the electron diffusivity as high as possible. The electrons injected into the 0.25µm thick p-type GaAs base with not very high doping (1017cm-3). The designed HBT enables cut off frequency on the order of 150GHz. The Ge/GaAs heterojunctions presented in our paper have proved to work better than comparable HBTs having GaAs bases and emitter/collector junctions made, for example, of AlGaAs/GaAs or other III-V compound semiconductors. The difference in lattice constants between Ge and GaAs is less than 2%. Therefore, there is no need of transition layers between Ge emitter and GaAs base. Significant difference in energy gap of these two materials presents new scope for improving performance of the emitter. With the complete structure being modelled and simulated using TCAD SILVACO, the collector/ emitter offset voltage of the device has been limited to a reasonable value of 63 millivolts by the dint of low energy band gap value associated with Ge emitter. The efficiency of the emitter in our HBT is 86%. Use of Germanium in the emitter and collector regions presents new opportunities for integration of this vertical device structure into silicon substrate. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Germanium" title="Germanium">Germanium</a>, <a href="https://publications.waset.org/abstracts/search?q=Gallium%20Arsenide" title=" Gallium Arsenide"> Gallium Arsenide</a>, <a href="https://publications.waset.org/abstracts/search?q=heterojunction%20bipolar%20transistor" title=" heterojunction bipolar transistor"> heterojunction bipolar transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20cut-off%20frequency" title=" high cut-off frequency"> high cut-off frequency</a> </p> <a href="https://publications.waset.org/abstracts/139611/design-and-modelling-of-gegaas-hetero-structure-bipolar-transistor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/139611.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">420</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">76</span> To Investigate the Effects of Potassium Ion Doping and Oxygen Vacancies in Thin-Film Transistors of Gallium Oxide-Indium Oxide on Their Electrical</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Peihao%20Huang">Peihao Huang</a>, <a href="https://publications.waset.org/abstracts/search?q=Chun%20Zhao"> Chun Zhao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Thin-film transistors(TFTs) have the advantages of low power consumption, short reaction time, and have high research value in the field of semiconductors, based on this reason, people have focused on gallium oxide-indium oxide thin-film transistors, a relatively common thin-film transistor, elaborated and analyzed his production process, "aqueous solution method", explained the purpose of each step of operation, and finally explored the influence of potassium ions doped in the channel layer on the electrical properties of the device, as well as the effect of oxygen vacancies on its switching ratio and memory, and summarized the conclusions. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=aqueous%20solution" title="aqueous solution">aqueous solution</a>, <a href="https://publications.waset.org/abstracts/search?q=oxygen%20vacancies" title=" oxygen vacancies"> oxygen vacancies</a>, <a href="https://publications.waset.org/abstracts/search?q=switch%20ratio" title=" switch ratio"> switch ratio</a>, <a href="https://publications.waset.org/abstracts/search?q=thin-film%20transistor%28TFT%29" title=" thin-film transistor(TFT)"> thin-film transistor(TFT)</a> </p> <a href="https://publications.waset.org/abstracts/171155/to-investigate-the-effects-of-potassium-ion-doping-and-oxygen-vacancies-in-thin-film-transistors-of-gallium-oxide-indium-oxide-on-their-electrical" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/171155.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">115</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">75</span> Compact Low-Voltage Biomedical Instrumentation Amplifiers</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Phanumas%20Khumsat">Phanumas Khumsat</a>, <a href="https://publications.waset.org/abstracts/search?q=Chalermchai%20Janmane"> Chalermchai Janmane</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Low-voltage instrumentation amplifier has been proposed for 3-lead electrocardiogram measurement system. The circuit’s interference rejection technique is based upon common-mode feed-forwarding where common-mode currents have cancelled each other at the output nodes. The common-mode current for cancellation is generated by means of common-mode sensing and emitter or source followers with resistors employing only one transistor. Simultaneously this particular transistor also provides common-mode feedback to the patient’s right/left leg to further reduce interference entering the amplifier. The proposed designs have been verified with simulations in 0.18-µm CMOS process operating under 1.0-V supply with CMRR greater than 80dB. Moreover ECG signals have experimentally recorded with the proposed instrumentation amplifiers implemented from discrete BJT (BC547, BC558) and MOSFET (ALD1106, ALD1107) transistors working with 1.5-V supply. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrocardiogram" title="electrocardiogram">electrocardiogram</a>, <a href="https://publications.waset.org/abstracts/search?q=common-mode%20feedback" title=" common-mode feedback"> common-mode feedback</a>, <a href="https://publications.waset.org/abstracts/search?q=common-mode%20feedforward" title=" common-mode feedforward"> common-mode feedforward</a>, <a href="https://publications.waset.org/abstracts/search?q=communication%20engineering" title=" communication engineering"> communication engineering</a> </p> <a href="https://publications.waset.org/abstracts/4913/compact-low-voltage-biomedical-instrumentation-amplifiers" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/4913.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">384</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">74</span> High Thermal Selective Detection of NOₓ Using High Electron Mobility Transistor Based on Gallium Nitride</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hassane%20Ouazzani%20Chahdi">Hassane Ouazzani Chahdi</a>, <a href="https://publications.waset.org/abstracts/search?q=Omar%20Helli"> Omar Helli</a>, <a href="https://publications.waset.org/abstracts/search?q=Bourzgui%20Nour%20Eddine"> Bourzgui Nour Eddine</a>, <a href="https://publications.waset.org/abstracts/search?q=Hassan%20Maher"> Hassan Maher</a>, <a href="https://publications.waset.org/abstracts/search?q=Ali%20Soltani"> Ali Soltani</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The real-time knowledge of the NO, NO₂ concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the concentration of each of these species will also enable engines to run leaner (i.e., more fuel efficient) while still meeting the anti-pollution requirements. Our proposed technology is promising in the field of automotive sensors. It consists of nanostructured semiconductors based on gallium nitride and zirconia dioxide. The development of new technologies for selective detection of NO and NO₂ gas species would be a critical enabler of superior depollution. The current response was well correlated to the NO concentration in the range of 0–2000 ppm, 0-2500 ppm NO₂, and 0-300 ppm NH₃ at a temperature of 600. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=NO%E2%82%93%20sensors" title="NOₓ sensors">NOₓ sensors</a>, <a href="https://publications.waset.org/abstracts/search?q=HEMT%20transistor" title=" HEMT transistor"> HEMT transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=anti-pollution" title=" anti-pollution"> anti-pollution</a>, <a href="https://publications.waset.org/abstracts/search?q=gallium%20nitride" title=" gallium nitride"> gallium nitride</a>, <a href="https://publications.waset.org/abstracts/search?q=gas%20sensor" title=" gas sensor"> gas sensor</a> </p> <a href="https://publications.waset.org/abstracts/79681/high-thermal-selective-detection-of-no-using-high-electron-mobility-transistor-based-on-gallium-nitride" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/79681.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">245</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">73</span> A Low-Power, Low-Noise and High Linearity 60 GHz LNA for WPAN Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Noha%20Al%20Majid">Noha Al Majid</a>, <a href="https://publications.waset.org/abstracts/search?q=Said%20Mazer"> Said Mazer</a>, <a href="https://publications.waset.org/abstracts/search?q=Moulhime%20El%20Bekkali"> Moulhime El Bekkali</a>, <a href="https://publications.waset.org/abstracts/search?q=Catherine%20Algani"> Catherine Algani</a>, <a href="https://publications.waset.org/abstracts/search?q=Mahmoud%20Mehdi"> Mahmoud Mehdi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A low noise figure (NF) and high linearity V-band Low Noise Amplifier (LNA) is reported in this article. The LNA compromises a three-stage cascode configuration. This LNA will be used as a part of a WPAN (Wireless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. It is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH 15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1 dB and its high linearity (IIP3 is about 22 dB). The LNA consumes 0.24 Watts, achieving a high gain which is about 23 dB, an input return loss better than -10 dB and an output return loss better than -8 dB. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=low%20noise%20amplifier" title="low noise amplifier">low noise amplifier</a>, <a href="https://publications.waset.org/abstracts/search?q=V-band" title=" V-band"> V-band</a>, <a href="https://publications.waset.org/abstracts/search?q=MMIC%20technology" title=" MMIC technology"> MMIC technology</a>, <a href="https://publications.waset.org/abstracts/search?q=LNA" title=" LNA"> LNA</a>, <a href="https://publications.waset.org/abstracts/search?q=amplifier" title=" amplifier"> amplifier</a>, <a href="https://publications.waset.org/abstracts/search?q=cascode" title=" cascode"> cascode</a>, <a href="https://publications.waset.org/abstracts/search?q=pseudomorphic%20high%20electron%20mobility%20transistor%20%28PHEMT%29" title=" pseudomorphic high electron mobility transistor (PHEMT)"> pseudomorphic high electron mobility transistor (PHEMT)</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20linearity" title=" high linearity"> high linearity</a> </p> <a href="https://publications.waset.org/abstracts/26198/a-low-power-low-noise-and-high-linearity-60-ghz-lna-for-wpan-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/26198.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">514</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">72</span> A 1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel Processed Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ke-Jing%20Lee">Ke-Jing Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Cheng-Jung%20Lee"> Cheng-Jung Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Yu-Chi%20Chang"> Yu-Chi Chang</a>, <a href="https://publications.waset.org/abstracts/search?q=Li-Wen%20Wang"> Li-Wen Wang</a>, <a href="https://publications.waset.org/abstracts/search?q=Yeong-Her%20Wang"> Yeong-Her Wang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> To avoid the cross-talk issue of only resistive random access memory (RRAM) cell, one transistor and one resistor (1T1R) architecture with a TiO₂-based RRAM cell connected with solution barium zirconate nickelate (BZN) organic thin film transistor (OTFT) device is successfully demonstrated. The OTFT were fabricated on a glass substrate. Aluminum (Al) as the gate electrode was deposited via a radio-frequency (RF) magnetron sputtering system. The barium acetate, zirconium n-propoxide, and nickel II acetylacetone were synthesized by using the sol-gel method. After the BZN solution was completely prepared using the sol-gel process, it was spin-coated onto the Al/glass substrate as the gate dielectric. The BZN layer was baked at 100 °C for 10 minutes under ambient air conditions. The pentacene thin film was thermally evaporated on the BZN layer at a deposition rate of 0.08 to 0.15 nm/s. Finally, gold (Au) electrode was deposited using an RF magnetron sputtering system and defined through shadow masks as both the source and drain. The channel length and width of the transistors were 150 and 1500 μm, respectively. As for the manufacture of 1T1R configuration, the RRAM device was fabricated directly on drain electrodes of TFT device. A simple metal/insulator/metal structure, which consisting of Al/TiO₂/Au structures, was fabricated. First, Au was deposited to be a bottom electrode of RRAM device by RF magnetron sputtering system. Then, the TiO₂ layer was deposited on Au electrode by sputtering. Finally, Al was deposited as the top electrode. The electrical performance of the BZN OTFT was studied, showing superior transfer characteristics with the low threshold voltage of −1.1 V, good saturation mobility of 5 cm²/V s, and low subthreshold swing of 400 mV/decade. The integration of the BZN OTFT and TiO₂ RRAM devices was finally completed to form 1T1R configuration with low power consumption of 1.3 μW, the low operation current of 0.5 μA, and reliable data retention. Based on the I-V characteristics, the different polarities of bipolar switching are found to be determined by the compliance current with the different distribution of the internal oxygen vacancies used in the RRAM and 1T1R devices. Also, this phenomenon can be well explained by the proposed mechanism model. It is promising to make the 1T1R possible for practical applications of low-power active matrix flat-panel displays. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=one%20transistor%20and%20one%20resistor%20%281T1R%29" title="one transistor and one resistor (1T1R)">one transistor and one resistor (1T1R)</a>, <a href="https://publications.waset.org/abstracts/search?q=organic%20thin-film%20transistor%20%28OTFT%29" title=" organic thin-film transistor (OTFT)"> organic thin-film transistor (OTFT)</a>, <a href="https://publications.waset.org/abstracts/search?q=resistive%20random%20access%20memory%20%28RRAM%29" title=" resistive random access memory (RRAM)"> resistive random access memory (RRAM)</a>, <a href="https://publications.waset.org/abstracts/search?q=sol-gel" title=" sol-gel"> sol-gel</a> </p> <a href="https://publications.waset.org/abstracts/65265/a-1t1r-nonvolatile-memory-with-altio2au-and-sol-gel-processed-barium-zirconate-nickelate-gate-in-pentacene-thin-film-transistor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/65265.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">354</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">71</span> Design and Simulation of 3-Transistor Active Pixel Sensor Using MATLAB Simulink</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=H.%20Alheeh">H. Alheeh</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Alameri"> M. Alameri</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Al%20Tarabsheh"> A. Al Tarabsheh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> There has been a growing interest in CMOS-based sensors technology in cameras as they afford low-power, small-size, and cost-effective imaging systems. This article describes the CMOS image sensor pixel categories and presents the design and the simulation of the 3-Transistor (3T) Active Pixel Sensor (APS) in MATLAB/Simulink tool. The analysis investigates the conversion of the light into an electrical signal for a single pixel sensing circuit, which consists of a photodiode and three NMOS transistors. The paper also proposes three modes for the pixel operation; reset, integration, and readout modes. The simulations of the electrical signals for each of the studied modes of operation show how the output electrical signals are correlated to the input light intensities. The charging/discharging speed for the photodiodes is also investigated. The output voltage for different light intensities, including in dark case, is calculated and showed its inverse proportionality with the light intensity. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=APS" title="APS">APS</a>, <a href="https://publications.waset.org/abstracts/search?q=CMOS%20image%20sensor" title=" CMOS image sensor"> CMOS image sensor</a>, <a href="https://publications.waset.org/abstracts/search?q=light%20intensities%20photodiode" title=" light intensities photodiode"> light intensities photodiode</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation" title=" simulation"> simulation</a> </p> <a href="https://publications.waset.org/abstracts/131973/design-and-simulation-of-3-transistor-active-pixel-sensor-using-matlab-simulink" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/131973.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">177</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">70</span> Low Voltage and High Field-Effect Mobility Thin Film Transistor Using Crystalline Polymer Nanocomposite as Gate Dielectric</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Debabrata%20Bhadra">Debabrata Bhadra</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20K.%20Chaudhuri"> B. K. Chaudhuri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The operation of organic thin film transistors (OFETs) with low voltage is currently a prevailing issue. We have fabricated anthracene thin-film transistor (TFT) with an ultrathin layer (~450nm) of Poly-vinylidene fluoride (PVDF)/CuO nanocomposites as a gate insulator. We obtained a device with excellent electrical characteristics at low operating voltages (<1V). Different layers of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constant (εr ). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films were investigated. This device was found to have highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of 0.34V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such favorable combination of properties means that these OFETs can be utilized successfully as voltages below 1V. A very simple fabrication process has been used along with step wise poling process for enhancing the pyroelectric effects on the device performance. The output characteristic of OFET after poling were changed and exhibited linear current-voltage relationship showing the evidence of large polarization. The temperature dependent response of the device was also investigated. The stable performance of the OFET after poling operation makes it reliable in temperature sensor applications. Such High-ε CuO/PVDF gate dielectric appears to be highly promising candidates for organic non-volatile memory and sensor field-effect transistors (FETs). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=organic%20field%20effect%20transistors" title="organic field effect transistors">organic field effect transistors</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20film%20transistor" title=" thin film transistor"> thin film transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=gate%20dielectric" title=" gate dielectric"> gate dielectric</a>, <a href="https://publications.waset.org/abstracts/search?q=organic%20semiconductor" title=" organic semiconductor"> organic semiconductor</a> </p> <a href="https://publications.waset.org/abstracts/53924/low-voltage-and-high-field-effect-mobility-thin-film-transistor-using-crystalline-polymer-nanocomposite-as-gate-dielectric" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/53924.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">244</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=MESFET%20transistor&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=MESFET%20transistor&page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=MESFET%20transistor&page=4">4</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=MESFET%20transistor&page=2" 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