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voltage</title> <meta name="description" content="Search results for: open circuit voltage"> <meta name="keywords" content="open circuit voltage"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none 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action="https://publications.waset.org/abstracts/search"> <div id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="open circuit voltage"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 4698</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: open circuit voltage</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4698</span> Combined Influence of Charge Carrier Density and Temperature on Open-Circuit Voltage in Bulk Heterojunction Organic Solar Cells</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Douglas%20Yeboah">Douglas Yeboah</a>, <a href="https://publications.waset.org/abstracts/search?q=Monishka%20Narayan"> Monishka Narayan</a>, <a href="https://publications.waset.org/abstracts/search?q=Jai%20Singh"> Jai Singh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> One of the key parameters in determining the power conversion efficiency (PCE) of organic solar cells (OSCs) is the open-circuit voltage, however, it is still not well understood. In order to examine the performance of OSCs, it is necessary to understand the losses associated with the open-circuit voltage and how best it can be improved. Here, an analytical expression for the open-circuit voltage of bulk heterojunction (BHJ) OSCs is derived from the charge carrier densities without considering the drift-diffusion current. The open-circuit voltage thus obtained is dependent on the donor-acceptor band gap, the energy difference between the highest occupied molecular orbital (HOMO) and the hole quasi-Fermi level of the donor material, temperature, the carrier density (electrons), the generation rate of free charge carriers and the bimolecular recombination coefficient. It is found that open-circuit voltage increases when the carrier density increases and when the temperature decreases. The calculated results are discussed in view of experimental results and agree with them reasonably well. Overall, this work proposes an alternative pathway for improving the open-circuit voltage in BHJ OSCs. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=charge%20carrier%20density" title="charge carrier density">charge carrier density</a>, <a href="https://publications.waset.org/abstracts/search?q=open-circuit%20voltage" title=" open-circuit voltage"> open-circuit voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=organic%20solar%20cells" title=" organic solar cells"> organic solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=temperature" title=" temperature"> temperature</a> </p> <a href="https://publications.waset.org/abstracts/68927/combined-influence-of-charge-carrier-density-and-temperature-on-open-circuit-voltage-in-bulk-heterojunction-organic-solar-cells" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/68927.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">373</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4697</span> A Test Methodology to Measure the Open-Loop Voltage Gain of an Operational Amplifier</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Maninder%20Kaur%20Gill">Maninder Kaur Gill</a>, <a href="https://publications.waset.org/abstracts/search?q=Alpana%20Agarwal"> Alpana Agarwal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Device%20Under%20Test%20%28DUT%29" title="Device Under Test (DUT)">Device Under Test (DUT)</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20loop%20voltage%20gain" title=" open loop voltage gain"> open loop voltage gain</a>, <a href="https://publications.waset.org/abstracts/search?q=operational%20amplifier" title=" operational amplifier"> operational amplifier</a>, <a href="https://publications.waset.org/abstracts/search?q=test%20circuit" title=" test circuit"> test circuit</a> </p> <a href="https://publications.waset.org/abstracts/63309/a-test-methodology-to-measure-the-open-loop-voltage-gain-of-an-operational-amplifier" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/63309.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">447</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4696</span> Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo">Yong Seo Koo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jong%20Ho%20Nam"> Jong Ho Nam</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Nam%20Choi"> Yong Nam Choi</a>, <a href="https://publications.waset.org/abstracts/search?q=Dae%20Yeol%20Yoo"> Dae Yeol Yoo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung%20Woo%20Han"> Jung Woo Han</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electro-static%20discharge%20%28ESD%29" title="electro-static discharge (ESD)">electro-static discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=protection%20circuit" title=" protection circuit"> protection circuit</a> </p> <a href="https://publications.waset.org/abstracts/9524/analysis-of-scr-based-esd-protection-circuit-on-holding-voltage-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9524.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4695</span> A Study on Unidirectional Analog Output Voltage Inverter for Capacitive Load</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sun-Ki%20Hong">Sun-Ki Hong</a>, <a href="https://publications.waset.org/abstracts/search?q=Nam-HeeByeon"> Nam-HeeByeon</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung-Seop%20Lee"> Jung-Seop Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae-Sam%20Kang"> Tae-Sam Kang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> For Common R or R-L load to apply arbitrary voltage, the bridge traditional inverters don’t have any difficulties by PWM method. However for driving some piezoelectric actuator, arbitrary voltage not a pulse but a steady voltage should be applied. Piezoelectric load is considered as R-C load and its voltage does not decrease even though the applied voltage decreases. Therefore it needs some special inverter with circuit that can discharge the capacitive energy. Especially for unidirectional arbitrary voltage driving like as sine wave, it becomes more difficult problem. In this paper, a charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator is proposed. The circuit has charging and discharging switches for increasing and decreasing output voltage. With the proposed simple circuit, the load voltage can have any unidirectional level with tens of bandwidth because the load voltage can be adjusted by switching the charging and discharging switch appropriately. The appropriateness is proved from the simulation of the proposed circuit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DC-DC%20converter" title="DC-DC converter">DC-DC converter</a>, <a href="https://publications.waset.org/abstracts/search?q=analog%20output%20voltage" title=" analog output voltage"> analog output voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=sinusoidal%20drive" title=" sinusoidal drive"> sinusoidal drive</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric%20load" title=" piezoelectric load"> piezoelectric load</a>, <a href="https://publications.waset.org/abstracts/search?q=discharging%20circuit" title=" discharging circuit "> discharging circuit </a> </p> <a href="https://publications.waset.org/abstracts/8464/a-study-on-unidirectional-analog-output-voltage-inverter-for-capacitive-load" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8464.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">380</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4694</span> A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-il%20Do">Kyoung-il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung-seok%20Lee"> Byung-seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-guk%20Chae"> Hee-guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-yun%20Seo%20Yong-seo%20Koo"> Jeong-yun Seo Yong-seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/89519/a-silicon-controlled-rectifier-based-esd-protection-circuit-with-high-holding-voltage-and-high-robustness-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/89519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">397</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4693</span> A Study on ESD Protection Circuit Applying Silicon Controlled Rectifier-Based Stack Technology with High Holding Voltage</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae">Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Bo-Bae%20Song"> Bo-Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/80537/a-study-on-esd-protection-circuit-applying-silicon-controlled-rectifier-based-stack-technology-with-high-holding-voltage" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/80537.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">548</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4692</span> Charge Carrier Mobility Dependent Open-Circuit Voltage in Organic and Hybrid Solar Cells</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=David%20Ompong">David Ompong</a>, <a href="https://publications.waset.org/abstracts/search?q=Jai%20Singh"> Jai Singh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A better understanding of the open-circuit voltage (Voc) related losses in organic solar cells (OSCs) is desirable in order to assess the photovoltaic performance of these devices. We have derived Voc as a function of charge carrier mobilities (μe and μh) for organic and hybrid solar cells by optimizing the drift-diffusion current density. The optimum Voc thus obtained depends on the energy difference between the highest occupied molecular orbital (HOMO) level and the quasi-Fermi level of holes of the donor material. We have found that the Voc depends on the ratio of the electron (μe) and hole (μh) mobilities and when μh > μe the Voc increases. The most important loss term in the Voc arises from the energetics of the donor and acceptor materials, which will be discussed in detail in this paper. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=charge%20carrier%20mobility" title="charge carrier mobility">charge carrier mobility</a>, <a href="https://publications.waset.org/abstracts/search?q=open-circuit%20voltage" title=" open-circuit voltage"> open-circuit voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=organic%20solar%20cells" title=" organic solar cells"> organic solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=quasi-fermi%20levels" title=" quasi-fermi levels"> quasi-fermi levels</a> </p> <a href="https://publications.waset.org/abstracts/39499/charge-carrier-mobility-dependent-open-circuit-voltage-in-organic-and-hybrid-solar-cells" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/39499.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">449</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4691</span> Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/56482/analysis-of-stacked-scr-based-esd-protection-circuit-with-low-trigger-voltage-and-latch-up-immunity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56482.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">524</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4690</span> SCR-Based Advanced ESD Protection Device for Low Voltage Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bo%20Bae%20Song">Bo Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung%20Seok%20Lee"> Byung Seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyun%20young%20Kim"> Hyun young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3, and D4). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/21774/scr-based-advanced-esd-protection-device-for-low-voltage-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/21774.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">575</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4689</span> Designing and Simulation of a CMOS Square Root Analog Multiplier</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Milad%20Kaboli">Milad Kaboli</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A new CMOS low voltage current-mode four-quadrant analog multiplier based on the squarer circuit with voltage output is presented. The proposed circuit is composed of a pair of current subtractors, a pair differential-input V-I converters and a pair of voltage squarers. The circuit was simulated using HSPICE simulator in standard 0.18 μm CMOS level 49 MOSIS (BSIM3 V3.2 SPICE-based). Simulation results show the performance of the proposed circuit and experimental results are given to confirm the operation. This topology of multiplier results in a high-frequency capability with low power consumption. The multiplier operates for a power supply ±1.2V. The simulation results of analog multiplier demonstrate a THD of 0.65% in 10MHz, a −3dB bandwidth of 1.39GHz, and a maximum power consumption of 7.1mW. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=analog%20processing%20circuit" title="analog processing circuit">analog processing circuit</a>, <a href="https://publications.waset.org/abstracts/search?q=WTA" title=" WTA"> WTA</a>, <a href="https://publications.waset.org/abstracts/search?q=LTA" title=" LTA"> LTA</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20voltage" title=" low voltage"> low voltage</a> </p> <a href="https://publications.waset.org/abstracts/8028/designing-and-simulation-of-a-cmos-square-root-analog-multiplier" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/8028.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">476</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4688</span> Field Experience with Sweep Frequency Response Analysis for Power Transformer Diagnosis</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ambuj%20Kumar">Ambuj Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=Sunil%20Kumar%20Singh"> Sunil Kumar Singh</a>, <a href="https://publications.waset.org/abstracts/search?q=Shrikant%20Singh"> Shrikant Singh</a>, <a href="https://publications.waset.org/abstracts/search?q=Zakir%20Husain"> Zakir Husain</a>, <a href="https://publications.waset.org/abstracts/search?q=R.%20K.%20Jarial"> R. K. Jarial</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Sweep frequency response analysis has been turning out a powerful tool for investigation of mechanical as well as electrical integration of transformers. In this paper various aspect of practical application of SFRA has been studied. Open circuit and short circuit measurement were done on different phases of high voltage and low voltage winding. A case study was presented for the transformer of rating 31.5 MVA for various frequency ranges. A clear picture was presented for sub- frequency ranges for HV as well as LV winding. The main motive of work is to investigate high voltage short circuit response. The theoretical concept about SFRA responses is validated with expert system software results. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=transformer%20winding" title="transformer winding">transformer winding</a>, <a href="https://publications.waset.org/abstracts/search?q=SFRA" title=" SFRA"> SFRA</a>, <a href="https://publications.waset.org/abstracts/search?q=OCT%20%26%20SCT" title=" OCT & SCT"> OCT & SCT</a>, <a href="https://publications.waset.org/abstracts/search?q=frequency%20deviation" title=" frequency deviation"> frequency deviation</a> </p> <a href="https://publications.waset.org/abstracts/27973/field-experience-with-sweep-frequency-response-analysis-for-power-transformer-diagnosis" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/27973.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">957</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4687</span> Analog Voltage Inverter Drive for Capacitive Load with Adaptive Gain Control</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Sun-Ki%20Hong">Sun-Ki Hong</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Ho%20Cho"> Yong-Ho Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Ki-Seok%20Kim"> Ki-Seok Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Tae-Sam%20Kang"> Tae-Sam Kang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=analog%20voltage%20inverter" title="analog voltage inverter">analog voltage inverter</a>, <a href="https://publications.waset.org/abstracts/search?q=capacitive%20load" title=" capacitive load"> capacitive load</a>, <a href="https://publications.waset.org/abstracts/search?q=gain%20control" title=" gain control"> gain control</a>, <a href="https://publications.waset.org/abstracts/search?q=dc-dc%20converter" title=" dc-dc converter"> dc-dc converter</a>, <a href="https://publications.waset.org/abstracts/search?q=piezoelectric" title=" piezoelectric"> piezoelectric</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20waveform" title=" voltage waveform"> voltage waveform</a> </p> <a href="https://publications.waset.org/abstracts/34752/analog-voltage-inverter-drive-for-capacitive-load-with-adaptive-gain-control" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/34752.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">655</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4686</span> Numerical Simulation of the Effect of 1 Mev Electron Beam on the Performance of a Solar Cell of Type n+/p GaAs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Waleed%20Alsaidy">Waleed Alsaidy</a>, <a href="https://publications.waset.org/abstracts/search?q=Mourad%20Mbarki"> Mourad Mbarki</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, it have investigated the effect of electron irradiation on the output characteristics of n+/p GaAs solar cell. The studied solar cell is exposed to an electron beam with kinetic energy of 1 MeV under AM0 illumination. In this work, it have used our own software to calculate the damage caused by these energetic particles. Indeed, these particles produce severe degradation on the performances of the solar cells. The aim of this work is to investigate the effect of electronic irradiation on the J(V) characteristics upon the fluence of particles φ (electron/cm2). Thereafter, we have evaluated the degradation of its performances such as the short circuit current J_sc, the open circuit voltage V_oc the efficiency η with respect to the fluence φ of electrons. it have shown that the variation of these parameters decrease linearly with the logarithm of the fluence φ, and their degradation begins from a threshold value φ_m. To validate our calculation, we have compared our results with other theoretical and experimental results available in the literature and we have found a good agreement between them. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=solar%20cells" title="solar cells">solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=GaAs" title=" GaAs"> GaAs</a>, <a href="https://publications.waset.org/abstracts/search?q=short%20circuit%20current" title=" short circuit current"> short circuit current</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage" title=" open circuit voltage"> open circuit voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=fluence" title=" fluence"> fluence</a>, <a href="https://publications.waset.org/abstracts/search?q=degradation" title=" degradation"> degradation</a> </p> <a href="https://publications.waset.org/abstracts/193039/numerical-simulation-of-the-effect-of-1-mev-electron-beam-on-the-performance-of-a-solar-cell-of-type-np-gaas" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/193039.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">22</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4685</span> Failure Localization of Bipolar Integrated Circuits by Implementing Active Voltage Contrast</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yiqiang%20Ni">Yiqiang Ni</a>, <a href="https://publications.waset.org/abstracts/search?q=Xuanlong%20Chen"> Xuanlong Chen</a>, <a href="https://publications.waset.org/abstracts/search?q=Enliang%20Li"> Enliang Li</a>, <a href="https://publications.waset.org/abstracts/search?q=Linting%20Zheng"> Linting Zheng</a>, <a href="https://publications.waset.org/abstracts/search?q=Shizheng%20Yang"> Shizheng Yang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Bipolar ICs are playing an important role in military applications, mainly used in logic gates, such as inverter and NAND gate. The defect of metal break located on the step is one of the main failure mechanisms of bipolar ICs, resulting in open-circuit or functional failure. In this situation, general failure localization methods like optical beam-induced resistance change (OBIRCH) and photon emission microscopy (PEM) might not be fully effective. However, active voltage contrast (AVC) can be used as a voltage probe, which may pinpoint the incorrect potential and thus locate the failure position. Two case studies will be present in this paper on how to implement AVC for failure localization, and the detailed failure mechanism will be discussed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bipolar%20IC" title="bipolar IC">bipolar IC</a>, <a href="https://publications.waset.org/abstracts/search?q=failure%20localization" title=" failure localization"> failure localization</a>, <a href="https://publications.waset.org/abstracts/search?q=metal%20break" title=" metal break"> metal break</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20failure" title=" open failure"> open failure</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage%20contrast" title=" voltage contrast"> voltage contrast</a> </p> <a href="https://publications.waset.org/abstracts/132527/failure-localization-of-bipolar-integrated-circuits-by-implementing-active-voltage-contrast" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/132527.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">291</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4684</span> Dielectric Recovery Characteristics of High Voltage Gas Circuit Breakers Operating with CO₂ Mixture</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Peng%20Lu">Peng Lu</a>, <a href="https://publications.waset.org/abstracts/search?q=Branimir%20Radisavljevic"> Branimir Radisavljevic</a>, <a href="https://publications.waset.org/abstracts/search?q=Martin%20Seeger"> Martin Seeger</a>, <a href="https://publications.waset.org/abstracts/search?q=Daniel%20Over"> Daniel Over</a>, <a href="https://publications.waset.org/abstracts/search?q=Torsten%20Votteler"> Torsten Votteler</a>, <a href="https://publications.waset.org/abstracts/search?q=Bernardo%20Galletti"> Bernardo Galletti</a> </p> <p class="card-text"><strong>Abstract:</strong></p> CO₂-based gas mixtures exhibit huge potential as the interruption medium for replacing SF₆ in high voltage switchgears. In this paper, the recovery characteristics of dielectric strength of CO₂-O₂ mixture in the post arc phase after the current zero are presented. As representative examples, the dielectric recovery curves under conditions of different gas filling pressures and short-circuit current amplitudes are presented. A series of dielectric recovery measurements suggests that the dielectric recovery rate is proportional to the mass flux of the blowing gas, and the dielectric strength recovers faster in the case of lower short circuit currents. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CO%E2%82%82%20mixture" title="CO₂ mixture">CO₂ mixture</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20voltage%20circuit%20breakers" title=" high voltage circuit breakers"> high voltage circuit breakers</a>, <a href="https://publications.waset.org/abstracts/search?q=dielectric%20recovery%20rate" title=" dielectric recovery rate"> dielectric recovery rate</a>, <a href="https://publications.waset.org/abstracts/search?q=short-circuit%20current" title=" short-circuit current"> short-circuit current</a>, <a href="https://publications.waset.org/abstracts/search?q=mass%20flux" title=" mass flux"> mass flux</a> </p> <a href="https://publications.waset.org/abstracts/139491/dielectric-recovery-characteristics-of-high-voltage-gas-circuit-breakers-operating-with-co2-mixture" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/139491.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">194</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4683</span> An Active Rectifier with Time-Domain Delay Compensation to Enhance the Power Conversion Efficiency</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Shao-Ku%20Kao">Shao-Ku Kao</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=wireless%20power%20transfer" title="wireless power transfer">wireless power transfer</a>, <a href="https://publications.waset.org/abstracts/search?q=active%20diode" title=" active diode"> active diode</a>, <a href="https://publications.waset.org/abstracts/search?q=delay%20compensation" title=" delay compensation"> delay compensation</a>, <a href="https://publications.waset.org/abstracts/search?q=time%20to%20voltage%20converter" title=" time to voltage converter"> time to voltage converter</a>, <a href="https://publications.waset.org/abstracts/search?q=PCE" title=" PCE"> PCE</a> </p> <a href="https://publications.waset.org/abstracts/99488/an-active-rectifier-with-time-domain-delay-compensation-to-enhance-the-power-conversion-efficiency" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/99488.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">282</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4682</span> Transient Voltage Distribution on the Single Phase Transmission Line under Short Circuit Fault Effect</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20Kojah">A. Kojah</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Nacaro%C4%9Flu"> A. Nacaroğlu</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Single phase transmission lines are used to transfer data or energy between two users. Transient conditions such as switching operations and short circuit faults cause the generation of the fluctuation on the waveform to be transmitted. Spatial voltage distribution on the single phase transmission line may change owing to the position and duration of the short circuit fault in the system. In this paper, the state space representation of the single phase transmission line for short circuit fault and for various types of terminations is given. Since the transmission line is modeled in time domain using distributed parametric elements, the mathematical representation of the event is given in state space (time domain) differential equation form. It also makes easy to solve the problem because of the time and space dependent characteristics of the voltage variations on the distributed parametrically modeled transmission line. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=energy%20transmission" title="energy transmission">energy transmission</a>, <a href="https://publications.waset.org/abstracts/search?q=transient%20effects" title=" transient effects"> transient effects</a>, <a href="https://publications.waset.org/abstracts/search?q=transmission%20line" title=" transmission line"> transmission line</a>, <a href="https://publications.waset.org/abstracts/search?q=transient%20voltage" title=" transient voltage"> transient voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=RLC%20short%20circuit" title=" RLC short circuit"> RLC short circuit</a>, <a href="https://publications.waset.org/abstracts/search?q=single%20phase" title=" single phase"> single phase</a> </p> <a href="https://publications.waset.org/abstracts/86007/transient-voltage-distribution-on-the-single-phase-transmission-line-under-short-circuit-fault-effect" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/86007.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">223</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4681</span> Electrochemical Studies of Si, Si-Ge- and Ge-Air Batteries</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=R.%20C.%20Sharma">R. C. Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Rishabh%20Bansal"> Rishabh Bansal</a>, <a href="https://publications.waset.org/abstracts/search?q=Prajwal%20Menon"> Prajwal Menon</a>, <a href="https://publications.waset.org/abstracts/search?q=Manoj%20K.%20Sharma"> Manoj K. Sharma</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Silicon-air battery is highly promising for electric vehicles due to its high theoretical energy density (8470 Whkg⁻¹) and its discharge products are non-toxic. For the first time, pure silicon and germanium powders are used as anode material. Nickel wire meshes embedded with charcoal and manganese dioxide powder as cathode and concentrated potassium hydroxide is used as electrolyte. Voltage-time curves have been presented in this study for pure silicon and germanium powder and 5% and 10% germanium with silicon powder. Silicon powder cell assembly gives a stable voltage of 0.88 V for ~20 minutes while Si-Ge provides cell voltage of 0.80-0.76 V for ~10-12 minutes, and pure germanium cell provides cell voltage 0.80-0.76 V for ~30 minutes. The cell voltage is higher for concentrated (10%) sodium hydroxide solution (1.08 V) and it is stable for ~40 minutes. A sharp decrease in cell voltage beyond 40 min may be due to rapid corrosion. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Silicon-air%20battery" title="Silicon-air battery">Silicon-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=Germanium-air%20battery" title=" Germanium-air battery"> Germanium-air battery</a>, <a href="https://publications.waset.org/abstracts/search?q=voltage-time%20curve" title=" voltage-time curve"> voltage-time curve</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage" title=" open circuit voltage"> open circuit voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=Anodic%20corrosion" title=" Anodic corrosion"> Anodic corrosion</a> </p> <a href="https://publications.waset.org/abstracts/138312/electrochemical-studies-of-si-si-ge-and-ge-air-batteries" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/138312.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">238</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4680</span> Inverter IGBT Open–Circuit Fault Detection Using Park's Vectors Enhanced by Polar Coordinates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bendiabdellah%20Azzeddine">Bendiabdellah Azzeddine</a>, <a href="https://publications.waset.org/abstracts/search?q=Cherif%20Bilal%20Djamal%20Eddine"> Cherif Bilal Djamal Eddine</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The three-phase power converter voltage structure is widely used in many power applications but its failure can lead to partial or total loss of control of the phase currents and can cause serious system malfunctions or even a complete system shutdown. To ensure continuity of service in all circumstances, effective and rapid techniques of detection and location of inverter fault is to be implemented. The present paper is dedicated to open-circuit fault detection in a three-phase two-level inverter fed induction motor. For detection purpose, the proposed contribution addresses the Park’s current vectors associated to a polar coordinates calculation tool to compute the exact value of the fault angle corresponding directly to the faulty IGBT switch. The merit of the proposed contribution is illustrated by experimental results. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=diagnosis" title="diagnosis">diagnosis</a>, <a href="https://publications.waset.org/abstracts/search?q=detection" title=" detection"> detection</a>, <a href="https://publications.waset.org/abstracts/search?q=Park%E2%80%99s%20vectors" title=" Park’s vectors"> Park’s vectors</a>, <a href="https://publications.waset.org/abstracts/search?q=polar%20coordinates" title=" polar coordinates"> polar coordinates</a>, <a href="https://publications.waset.org/abstracts/search?q=open-circuit%20fault" title=" open-circuit fault"> open-circuit fault</a>, <a href="https://publications.waset.org/abstracts/search?q=inverter" title=" inverter"> inverter</a>, <a href="https://publications.waset.org/abstracts/search?q=IGBT%20switch" title=" IGBT switch"> IGBT switch</a> </p> <a href="https://publications.waset.org/abstracts/71340/inverter-igbt-open-circuit-fault-detection-using-parks-vectors-enhanced-by-polar-coordinates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/71340.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">402</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4679</span> Optimization of Cu (In, Ga)Se₂ Based Thin Film Solar Cells: Simulation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Razieh%20Teimouri">Razieh Teimouri</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Electrical modelling of Cu (In,Ga)Se₂ thin film solar cells is carried out with compositionally graded absorber and CdS buffer layer. Simulation results are compared with experimental data. Surface defect layers (SDL) are located in CdS/CIGS interface for improving open circuit voltage simulated structure through the analysis of the interface is investigated with or without this layer. When SDL removed, by optimizing the conduction band offset (CBO) position of the buffer/absorber layers with its recombination mechanisms and also shallow donor density in the CdS, the open circuit voltage increased significantly. As a result of simulation, excellent performance can be obtained when the conduction band of window layer positions higher by 0.2 eV than that of CIGS and shallow donor density in the CdS was found about 1×10¹⁸ (cm⁻³). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CIGS%20solar%20cells" title="CIGS solar cells">CIGS solar cells</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20film" title=" thin film"> thin film</a>, <a href="https://publications.waset.org/abstracts/search?q=SCAPS" title=" SCAPS"> SCAPS</a>, <a href="https://publications.waset.org/abstracts/search?q=buffer%20layer" title=" buffer layer"> buffer layer</a>, <a href="https://publications.waset.org/abstracts/search?q=conduction%20band%20offset" title=" conduction band offset"> conduction band offset</a> </p> <a href="https://publications.waset.org/abstracts/82360/optimization-of-cu-in-gase2-based-thin-film-solar-cells-simulation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/82360.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">230</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4678</span> Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do">Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park"> Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae"> Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrostatic%20discharge%20%28ESD%29" title="electrostatic discharge (ESD)">electrostatic discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20voltage%20trigger%20silicon%20controlled%20rectifier%20%28LVTSCR%29" title=" low voltage trigger silicon controlled rectifier (LVTSCR)"> low voltage trigger silicon controlled rectifier (LVTSCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=MVTSCR" title=" MVTSCR"> MVTSCR</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/73702/low-trigger-voltage-silicon-controlled-rectifier-stacking-structure-with-high-holding-voltage-for-high-voltage-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73702.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">458</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4677</span> On-Chip Aging Sensor Circuit Based on Phase Locked Loop Circuit </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ararat%20Khachatryan">Ararat Khachatryan</a>, <a href="https://publications.waset.org/abstracts/search?q=Davit%20Mirzoyan"> Davit Mirzoyan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In sub micrometer technology, the aging phenomenon starts to have a significant impact on the reliability of integrated circuits by bringing performance degradation. For that reason, it is important to have a capability to evaluate the aging effects accurately. This paper presents an accurate aging measurement approach based on phase-locked loop (PLL) and voltage-controlled oscillator (VCO) circuit. The architecture is rejecting the circuit self-aging effect from the characteristics of PLL, which is generating the frequency without any aging phenomena affects. The aging monitor is implemented in low power 32 nm CMOS technology, and occupies a pretty small area. Aging simulation results show that the proposed aging measurement circuit improves accuracy by about 2.8% at high temperature and 19.6% at high voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=aging%20effect" title="aging effect">aging effect</a>, <a href="https://publications.waset.org/abstracts/search?q=HCI" title=" HCI"> HCI</a>, <a href="https://publications.waset.org/abstracts/search?q=NBTI" title=" NBTI"> NBTI</a>, <a href="https://publications.waset.org/abstracts/search?q=nanoscale" title=" nanoscale"> nanoscale</a> </p> <a href="https://publications.waset.org/abstracts/65068/on-chip-aging-sensor-circuit-based-on-phase-locked-loop-circuit" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/65068.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">359</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4676</span> High-Voltage Resonant Converter with Extreme Load Variation: Design Criteria and Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jose%20A.%20Pomilio">Jose A. Pomilio</a>, <a href="https://publications.waset.org/abstracts/search?q=Olavo%20Bet"> Olavo Bet</a>, <a href="https://publications.waset.org/abstracts/search?q=Mateus%20P.%20Vieira"> Mateus P. Vieira</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The power converter that feeds high-frequency, high-voltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively low-frequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid over voltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=high-voltage%20transformer" title="high-voltage transformer">high-voltage transformer</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20converter" title=" resonant converter"> resonant converter</a>, <a href="https://publications.waset.org/abstracts/search?q=soft-commutation" title=" soft-commutation"> soft-commutation</a>, <a href="https://publications.waset.org/abstracts/search?q=external%20inductance" title=" external inductance"> external inductance</a> </p> <a href="https://publications.waset.org/abstracts/11524/high-voltage-resonant-converter-with-extreme-load-variation-design-criteria-and-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/11524.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">481</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4675</span> Studies on the Feasibility of Cow Dung as a Non-Conventional Energy Source</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Raj%20Kumar%20Rajak">Raj Kumar Rajak</a>, <a href="https://publications.waset.org/abstracts/search?q=Bharat%20Mishra"> Bharat Mishra</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Bio-batteries represent an entirely new long-term, reasonable, reachable and ecofriendly approach to produce sustainable energy. In the present experimental work, we have studied the effect of generation of power by bio-battery using different electrode pairs. The tests show that it is possible to generate electricity using cow dung as an electrolyte. C-Mg electrode pair shows maximum voltage and SCC (Short Circuit Current) while C-Zn electrode pair shows less OCV (Open Circuit Voltage) and SCC. We have chosen C-Zn electrodes because Mg electrodes are not economical. By the studies of different electrodes and cow dung, it is found that C-Zn electrode battery is more suitable. This result shows that the bio-batteries have the potency to full fill the need of electricity demand for lower energy equipment. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bio-batteries" title="bio-batteries">bio-batteries</a>, <a href="https://publications.waset.org/abstracts/search?q=electricity" title=" electricity"> electricity</a>, <a href="https://publications.waset.org/abstracts/search?q=cow-dung" title=" cow-dung"> cow-dung</a>, <a href="https://publications.waset.org/abstracts/search?q=electrodes" title=" electrodes"> electrodes</a>, <a href="https://publications.waset.org/abstracts/search?q=non-conventional" title=" non-conventional"> non-conventional</a> </p> <a href="https://publications.waset.org/abstracts/82579/studies-on-the-feasibility-of-cow-dung-as-a-non-conventional-energy-source" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/82579.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">205</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4674</span> Dielectric Properties in Frequency Domain of Main Insulation System of Printed Circuit Board</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Xize%20Dai">Xize Dai</a>, <a href="https://publications.waset.org/abstracts/search?q=Jian%20Hao"> Jian Hao</a>, <a href="https://publications.waset.org/abstracts/search?q=Claus%20Leth%20Bak"> Claus Leth Bak</a>, <a href="https://publications.waset.org/abstracts/search?q=Gian%20Carlo%20Montanari"> Gian Carlo Montanari</a>, <a href="https://publications.waset.org/abstracts/search?q=Huai%20Wang"> Huai Wang</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Printed Circuit Board (PCB) is a critical component applicable to power electronics systems, especially for high-voltage applications involving several high-voltage and high-frequency SiC/GaN devices. The insulation system of PCB is facing more challenges from high-voltage and high-frequency stress that can alter the dielectric properties. Dielectric properties of the PCB insulation system also determine the electrical field distribution that correlates with intrinsic and extrinsic aging mechanisms. Hence, investigating the dielectric properties in the frequency domain of the PCB insulation system is a must. The paper presents the frequency-dependent, temperature-dependent, and voltage-dependent dielectric properties, permittivity, conductivity, and dielectric loss tangents of PCB insulation systems. The dielectric properties mechanisms associated with frequency, temperature, and voltage are revealed from the design perspective. It can be concluded that the dielectric properties of PCB in the frequency domain show a strong dependence on voltage, frequency, and temperature. The voltage-, frequency-, and temperature-dependent dielectric properties are associated with intrinsic conduction behavior and polarization patterns from the perspective of dielectric theory. The results may provide some reference for the PCB insulation system design in high voltage, high frequency, and high-temperature power electronics applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrical%20insulation%20system" title="electrical insulation system">electrical insulation system</a>, <a href="https://publications.waset.org/abstracts/search?q=dielectric%20properties" title=" dielectric properties"> dielectric properties</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20voltage%20and%20frequency" title=" high voltage and frequency"> high voltage and frequency</a>, <a href="https://publications.waset.org/abstracts/search?q=printed%20circuit%20board" title=" printed circuit board"> printed circuit board</a> </p> <a href="https://publications.waset.org/abstracts/168071/dielectric-properties-in-frequency-domain-of-main-insulation-system-of-printed-circuit-board" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/168071.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">94</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4673</span> Thermal Interruption Performance of High Voltage Gas Circuit Breaker Operating with CO₂ Mixtures</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yacine%20Babou">Yacine Babou</a>, <a href="https://publications.waset.org/abstracts/search?q=Nitesh%20Ranjan"> Nitesh Ranjan</a>, <a href="https://publications.waset.org/abstracts/search?q=Branimir%20Radisavljevic"> Branimir Radisavljevic </a>, <a href="https://publications.waset.org/abstracts/search?q=Martin%20Seeger"> Martin Seeger</a>, <a href="https://publications.waset.org/abstracts/search?q=Daniel%20Over"> Daniel Over</a>, <a href="https://publications.waset.org/abstracts/search?q=Torsten%20Votteler"> Torsten Votteler</a>, <a href="https://publications.waset.org/abstracts/search?q=Bernardo%20Galletti"> Bernardo Galletti</a>, <a href="https://publications.waset.org/abstracts/search?q=Paulo%20Cristini"> Paulo Cristini</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the frame of replacement of Sulfur hexafluoride (SF6) gas as insulating and switching medium, diverse alternative gases, offering acceptable Global Warming Potential and fulfilling requirements in terms of heat dissipation, insulation and arc quenching performances are currently investigated for High Voltage Circuit Breaker applications. Among the potential gases, CO₂ seems a promising candidate for replacing SF6, because on one hand it is environmentally friendly, harmless, non-toxic, non-corrosive, non-flammable and on the other hand previous studies have demonstrated its fair interruption capabilities. The present study aims at investigating the performance of CO₂ for the thermal interruption in high voltage self-blast circuit breakers. In particular, the correlation between thermal interruption performance and arc voltage is considered and the effect of the arc-network interaction on the performance is rigorously analyzed. For the considered designs, the thermal interruption was evaluated by varying the slope at current zero (i.e., di/dt) for which the breaker could interrupt. Besides, the characteristics of the post-arc current are examined in detail for various rated voltages and currents. The outcome of these experimental investigations will be reported and analyzed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=current%20zero%20measurement" title="current zero measurement">current zero measurement</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20voltage%20circuit%20breaker" title=" high voltage circuit breaker"> high voltage circuit breaker</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20arc%20discharge" title=" thermal arc discharge"> thermal arc discharge</a>, <a href="https://publications.waset.org/abstracts/search?q=thermal%20interruption" title=" thermal interruption"> thermal interruption</a> </p> <a href="https://publications.waset.org/abstracts/135199/thermal-interruption-performance-of-high-voltage-gas-circuit-breaker-operating-with-co2-mixtures" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/135199.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">185</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4672</span> Computer-Aided Teaching of Transformers for Undergraduates</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Rajesh%20Kumar">Rajesh Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=Roopali%20Dogra"> Roopali Dogra</a>, <a href="https://publications.waset.org/abstracts/search?q=Puneet%20Aggarwal"> Puneet Aggarwal</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In the era of technological advancement, use of computer technology has become inevitable. Hence it has become the need of the hour to integrate software methods in engineering curriculum as a part to boost pedagogy techniques. Simulations software is a great help to graduates of disciplines such as electrical engineering. Since electrical engineering deals with high voltages and heavy instruments, extra care must be taken while operating with them. The viable solution would be to have appropriate control. The appropriate control could be well designed if engineers have knowledge of kind of waveforms associated with the system. Though these waveforms can be plotted manually, but it consumes a lot of time. Hence aid of simulation helps to understand steady state of system and resulting in better performance. In this paper computer, aided teaching of transformer is carried out using MATLAB/Simulink. The test carried out on a transformer includes open circuit test and short circuit respectively. The respective parameters of transformer are then calculated using the values obtained from open circuit and short circuit test respectively using Simulink. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=computer%20aided%20teaching" title="computer aided teaching">computer aided teaching</a>, <a href="https://publications.waset.org/abstracts/search?q=open%20circuit%20test" title=" open circuit test"> open circuit test</a>, <a href="https://publications.waset.org/abstracts/search?q=short%20circuit%20test" title=" short circuit test"> short circuit test</a>, <a href="https://publications.waset.org/abstracts/search?q=simulink" title=" simulink"> simulink</a>, <a href="https://publications.waset.org/abstracts/search?q=transformer" title=" transformer"> transformer</a> </p> <a href="https://publications.waset.org/abstracts/73486/computer-aided-teaching-of-transformers-for-undergraduates" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73486.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">374</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4671</span> Studies on the Feasibility of Cow’s Urine as Non-Conventional Energy Sources</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Raj%20Kumar%20Rajak">Raj Kumar Rajak</a>, <a href="https://publications.waset.org/abstracts/search?q=Bharat%20Mishra"> Bharat Mishra</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Bio-batteries represent an entirely new long-term, reasonable, reachable, and eco-friendly approach to generation of sustainable energy. In the present experimental work, we have studied the effect of the generation of power by bio-battery using different electrode pairs. The tests show that it is possible to generate electricity using cow’s urine as an electrolyte. C-Mg electrode pair shows maximum Voltage and Short Circuit Current (SCC), while C-Zn electrode pair shows less Open Circuit Voltage (OCV) and SCC. By the studies of cow urine and different electrodes, it is found that C-Zn electrode battery is more economical. The cow urine battery with C-Zn electrode provides maximum power (707.4 mW) and durability (up to 145 h). This result shows that the bio-batteries have the potency to full fill the need of electricity demand for lower energy equipment. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=bio-batteries" title="bio-batteries">bio-batteries</a>, <a href="https://publications.waset.org/abstracts/search?q=cow%27s%20urine" title=" cow's urine"> cow's urine</a>, <a href="https://publications.waset.org/abstracts/search?q=electrodes" title=" electrodes"> electrodes</a>, <a href="https://publications.waset.org/abstracts/search?q=non-conventional" title=" non-conventional"> non-conventional</a> </p> <a href="https://publications.waset.org/abstracts/92684/studies-on-the-feasibility-of-cows-urine-as-non-conventional-energy-sources" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/92684.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">202</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4670</span> Landfill Leachate: A Promising Substrate for Microbial Fuel Cells</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jayesh%20M.%20Sonawane">Jayesh M. Sonawane</a>, <a href="https://publications.waset.org/abstracts/search?q=Prakash%20C.%20Ghosh"> Prakash C. Ghosh</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Landfill leachate emerges as a promising feedstock for microbial fuel cells (MFCs). In the present investigation, direct air-breathing cathode-based MFCs are fabricated to investigate the potential of landfill leachate. Three MFCs that have different cathode areas are fabricated and investigated for 17 days under open circuit conditions. The maximum open circuit voltage (OCV) is observed to be as high as 1.29 V. The maximum cathode area specific power density achieved in the reactor is 1513 mW m<sup>-2</sup>. Further studies are under progress to understand the origin of high OCV obtained from landfill leachate-based MFCs. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=microbial%20fuel%20cells" title="microbial fuel cells">microbial fuel cells</a>, <a href="https://publications.waset.org/abstracts/search?q=landfill%20leachate" title=" landfill leachate"> landfill leachate</a>, <a href="https://publications.waset.org/abstracts/search?q=air-breathing%20cathode" title=" air-breathing cathode"> air-breathing cathode</a>, <a href="https://publications.waset.org/abstracts/search?q=performance%20study" title=" performance study"> performance study</a> </p> <a href="https://publications.waset.org/abstracts/60712/landfill-leachate-a-promising-substrate-for-microbial-fuel-cells" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/60712.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">310</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4669</span> Single-Inductor Multi-Output Converters with Four-Level Output Voltages</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yasunori%20Kobori">Yasunori Kobori</a>, <a href="https://publications.waset.org/abstracts/search?q=Murong%20Li"> Murong Li</a>, <a href="https://publications.waset.org/abstracts/search?q=Feng%20Zhao"> Feng Zhao</a>, <a href="https://publications.waset.org/abstracts/search?q=Shu%20Wu"> Shu Wu</a>, <a href="https://publications.waset.org/abstracts/search?q=Nobukazu%20Takai"> Nobukazu Takai</a>, <a href="https://publications.waset.org/abstracts/search?q=Haruo%20Kobayashi"> Haruo Kobayashi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper proposes an electrolytic capacitor-less transformer-less AC-DC LED driver with a current ripple canceller. The proposed LED driver includes a diode bridge, a buck-boost converter, a negative feedback controller and a current ripple cancellation circuit. The current ripple canceller works as a bi-directional current converter using a sub-inductor, a sub-capacitor and two switches for controlling current flow. LED voltage is controlled in order to regulate LED current by the negative feedback controller using a current sense resistor. There are two capacitors with capacitance of 5 uF. We describe circuit topologies, operation principles and simulation results for our proposed circuit. In addition, we show the line regulation for input voltage variation from 85V to 130V. The output voltage ripple is 2V and the LED current ripple is 65 mA which is less than 20% of the average of LED current of 350 mA. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=DC-DC%20buck%20converter" title="DC-DC buck converter">DC-DC buck converter</a>, <a href="https://publications.waset.org/abstracts/search?q=four-level%20output%20voltage" title=" four-level output voltage"> four-level output voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=single%20inductor%20multi%20output%20%28SIMO%29" title=" single inductor multi output (SIMO)"> single inductor multi output (SIMO)</a>, <a href="https://publications.waset.org/abstracts/search?q=switching%20converter" title=" switching converter "> switching converter </a> </p> <a href="https://publications.waset.org/abstracts/9207/single-inductor-multi-output-converters-with-four-level-output-voltages" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9207.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">548</span> </span> </div> </div> <ul class="pagination"> <li class="page-item disabled"><span class="page-link">&lsaquo;</span></li> <li class="page-item active"><span class="page-link">1</span></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage&page=2">2</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage&page=3">3</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage&page=4">4</a></li> <li class="page-item"><a class="page-link" href="https://publications.waset.org/abstracts/search?q=open%20circuit%20voltage&page=5">5</a></li> <li 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