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Silvaco</title> <meta name="description" content="Search results for: Tcad Silvaco"> <meta name="keywords" content="Tcad Silvaco"> <meta name="viewport" content="width=device-width, initial-scale=1, minimum-scale=1, maximum-scale=1, user-scalable=no"> <meta charset="utf-8"> <link href="https://cdn.waset.org/favicon.ico" type="image/x-icon" rel="shortcut icon"> <link href="https://cdn.waset.org/static/plugins/bootstrap-4.2.1/css/bootstrap.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/plugins/fontawesome/css/all.min.css" rel="stylesheet"> <link href="https://cdn.waset.org/static/css/site.css?v=150220211555" rel="stylesheet"> </head> <body> <header> <div class="container"> <nav class="navbar navbar-expand-lg navbar-light"> <a class="navbar-brand" href="https://waset.org"> <img src="https://cdn.waset.org/static/images/wasetc.png" alt="Open Science Research Excellence" title="Open Science Research Excellence" /> </a> <button class="d-block d-lg-none navbar-toggler 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id="custom-search-input"> <div class="input-group"> <i class="fas fa-search"></i> <input type="text" class="search-query" name="q" placeholder="Author, Title, Abstract, Keywords" value="Tcad Silvaco"> <input type="submit" class="btn_search" value="Search"> </div> </div> </form> </div> </div> <div class="row mt-3"> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Commenced</strong> in January 2007</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Frequency:</strong> Monthly</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Edition:</strong> International</div> </div> </div> <div class="col-sm-3"> <div class="card"> <div class="card-body"><strong>Paper Count:</strong> 30</div> </div> </div> </div> <h1 class="mt-3 mb-3 text-center" style="font-size:1.6rem;">Search results for: Tcad Silvaco</h1> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">30</span> Modeling and Simulation of InAs/GaAs and GaSb/GaAS Quantum Dot Solar Cells in SILVACO TCAD</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fethi%20Benyettou">Fethi Benyettou</a>, <a href="https://publications.waset.org/abstracts/search?q=Abdelkader%20Aissat"> Abdelkader Aissat</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20A.%20Benammar"> M. A. Benammar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this work, we use Silvaco TCAD software for modeling and simulations of standard GaAs solar cell, InAs/GaAs and GaSb/GaAs p-i-n quantum dot solar cell. When comparing 20-layer InAs/GaAs, GaSb/GaAs quantum dots solar cells with standard GaAs solar cell, the conversion efficiency in simulation results increased from 16.48 % to 22.6% and 16.48% to 22.42% respectively. Also, the absorption range edge of photons with low energies extended from 900 nm to 1200 nm. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=SILVACO%20TCAD" title="SILVACO TCAD">SILVACO TCAD</a>, <a href="https://publications.waset.org/abstracts/search?q=the%20quantum%20dot" title=" the quantum dot"> the quantum dot</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation" title=" simulation"> simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=materials%20engineering" title=" materials engineering"> materials engineering</a> </p> <a href="https://publications.waset.org/abstracts/20994/modeling-and-simulation-of-inasgaas-and-gasbgaas-quantum-dot-solar-cells-in-silvaco-tcad" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/20994.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">503</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">29</span> Comparison between the Efficiency of Heterojunction Thin Film InGaP\GaAs\Ge and InGaP\GaAs Solar Cell</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=F.%20Djaafar">F. Djaafar</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Hadri"> B. Hadri</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20Bachir"> G. Bachir</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents the design parameters for a thin film 3J <em>InGaP/GaAs/Ge </em>solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction <em>InGaP/GaAs/Ge </em>cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=heterojunction" title="heterojunction">heterojunction</a>, <a href="https://publications.waset.org/abstracts/search?q=modeling" title=" modeling"> modeling</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation" title=" simulation"> simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=thin%20film" title=" thin film"> thin film</a>, <a href="https://publications.waset.org/abstracts/search?q=Tcad%20Silvaco" title=" Tcad Silvaco"> Tcad Silvaco</a> </p> <a href="https://publications.waset.org/abstracts/66258/comparison-between-the-efficiency-of-heterojunction-thin-film-ingapgaasge-and-ingapgaas-solar-cell" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/66258.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">369</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">28</span> Effect of Environmental Conditions on the Substrate Cu(In,Ga)Se2 Solar Cell Performances</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mekhannene%20Amine">Mekhannene Amine</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we began in the first step by two-dimensional simulation of a CIGS solar cell, in order to increase the current record efficiency of 20.48% for a single CIGS cell. Was created by utilizing a set of physical and technological parameters a solar cell of reference (such as layer thicknesses, gallium ratio, doping levels and materials properties) documented in bibliography and very known in the experimental field. This was accomplished through modeling and simulation using Atlas SILVACO-TCAD, an tool two and three dimensions very powerful and very adapted. This study has led us to determine the influence of different environmental parameters such as illumination (G) and temperature (T). In the second step, we continued our study by determining the influence of physical parameters (the acceptor of concentration NA) and geometric (thickness t) of the CIGS absorber layer, were varied to produce an optimum efficiency of 24.36%. This approach is promising to produce a CIGS classic solar cell to conduct a maximum performance. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=solar%20cell" title="solar cell">solar cell</a>, <a href="https://publications.waset.org/abstracts/search?q=cigs" title=" cigs"> cigs</a>, <a href="https://publications.waset.org/abstracts/search?q=photovoltaic%20generator" title=" photovoltaic generator"> photovoltaic generator</a>, <a href="https://publications.waset.org/abstracts/search?q=illumination" title=" illumination"> illumination</a>, <a href="https://publications.waset.org/abstracts/search?q=temperature" title=" temperature"> temperature</a>, <a href="https://publications.waset.org/abstracts/search?q=Atlas%20SILVACO-TCAD" title=" Atlas SILVACO-TCAD"> Atlas SILVACO-TCAD</a> </p> <a href="https://publications.waset.org/abstracts/17405/effect-of-environmental-conditions-on-the-substrate-cuingase2-solar-cell-performances" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/17405.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">645</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">27</span> Thermal Effect in Power Electrical for HEMTs Devices with InAlN/GaN</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zakarya%20Kourdi">Zakarya Kourdi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mohammed%20Khaouani"> Mohammed Khaouani</a>, <a href="https://publications.waset.org/abstracts/search?q=Benyounes%20Bouazza"> Benyounes Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=Ahlam%20Guen-Bouazza"> Ahlam Guen-Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=Amine%20Boursali"> Amine Boursali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we have evaluated the thermal effect for high electron mobility transistors (HEMTs) heterostructure InAlN/GaN with a gate length 30nm high-performance. It also shows the analysis and simulated these devices, and how can be used in different application. The simulator Tcad-Silvaco software has used for predictive results good for the DC, AC and RF characteristic, Devices offered max drain current 0.67A; transconductance is 720 mS/mm the unilateral power gain of 180 dB. A cutoff frequency of 385 GHz, and max frequency 810 GHz These results confirm the feasibility of using HEMTs with InAlN/GaN in high power amplifiers, as well as thermal places. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=HEMT" title="HEMT">HEMT</a>, <a href="https://publications.waset.org/abstracts/search?q=Thermal%20Effect" title=" Thermal Effect"> Thermal Effect</a>, <a href="https://publications.waset.org/abstracts/search?q=Silvaco" title=" Silvaco"> Silvaco</a>, <a href="https://publications.waset.org/abstracts/search?q=InAlN%2FGaN" title=" InAlN/GaN"> InAlN/GaN</a> </p> <a href="https://publications.waset.org/abstracts/25974/thermal-effect-in-power-electrical-for-hemts-devices-with-inalngan" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/25974.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">467</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">26</span> Modelling and Simulation of Light and Temperature Efficient Interdigitated Back- Surface-Contact Solar Cell with 28.81% Efficiency Rate</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Mahfuzur%20Rahman">Mahfuzur Rahman</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Back-contact solar cells improve optical properties by moving all electrically conducting parts to the back of the cell. The cell's structure allows silicon solar cells to surpass the 25% efficiency barrier and interdigitated solar cells are now the most efficient. In this work, the fabrication of a light, efficient and temperature resistant interdigitated back contact (IBC) solar cell is investigated. This form of solar cell differs from a conventional solar cell in that the electrodes are located at the back of the cell, eliminating the need for grids on the top, allowing the full surface area of the cell to receive sunlight, resulting in increased efficiency. In this project, we will use SILVACO TCAD, an optoelectronic device simulator, to construct a very thin solar cell with dimensions of 100x250um in 2D Luminous. The influence of sunlight intensity and atmospheric temperature on solar cell output power is highly essential and it has been explored in this work. The cell's optimum performance with 150um bulk thickness provides 28.81% efficiency with an 87.68% fill factor rate making it very thin, flexible and resilient, providing diverse operational capabilities. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=interdigitated" title="interdigitated">interdigitated</a>, <a href="https://publications.waset.org/abstracts/search?q=shading" title=" shading"> shading</a>, <a href="https://publications.waset.org/abstracts/search?q=recombination%20loss" title=" recombination loss"> recombination loss</a>, <a href="https://publications.waset.org/abstracts/search?q=incident-plane" title=" incident-plane"> incident-plane</a>, <a href="https://publications.waset.org/abstracts/search?q=drift-diffusion" title=" drift-diffusion"> drift-diffusion</a>, <a href="https://publications.waset.org/abstracts/search?q=luminous" title=" luminous"> luminous</a>, <a href="https://publications.waset.org/abstracts/search?q=SILVACO" title=" SILVACO"> SILVACO</a> </p> <a href="https://publications.waset.org/abstracts/146112/modelling-and-simulation-of-light-and-temperature-efficient-interdigitated-back-surface-contact-solar-cell-with-2881-efficiency-rate" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/146112.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">146</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">25</span> Optimal Design of InGaP/GaAs Heterojonction Solar Cell</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Djaafar%20F.">Djaafar F.</a>, <a href="https://publications.waset.org/abstracts/search?q=Hadri%20B."> Hadri B.</a>, <a href="https://publications.waset.org/abstracts/search?q=Bachir%20G."> Bachir G.</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We studied mainly the influence of temperature, thickness, molar fraction and the doping of the various layers (emitter, base, BSF and window) on the performances of a photovoltaic solar cell. In a first stage, we optimized the performances of the InGaP/GaAs dual-junction solar cell while varying its operation temperature from 275°K to 375 °K with an increment of 25°C using a virtual wafer fabrication TCAD Silvaco. The optimization at 300°K led to the following result Icc =14.22 mA/cm2, Voc =2.42V, FF =91.32 %, η = 22.76 % which is close with those found in the literature. In a second stage ,we have varied the molar fraction of different layers as well their thickness and the doping of both emitters and bases and we have registered the result of each variation until obtaining an optimal efficiency of the proposed solar cell at 300°K which was of Icc=14.35mA/cm2,Voc=2.47V,FF=91.34,and η =23.33% for In(1-x)Ga(x)P molar fraction( x=0.5).The elimination of a layer BSF on the back face of our cell, enabled us to make a remarkable improvement of the short-circuit current (Icc=14.70 mA/cm2) and a decrease in open circuit voltage Voc and output η which reached 1.46V and 11.97% respectively. Therefore, we could determine the critical parameters of the cell and optimize its various technological parameters to obtain the best performance for a dual junction solar cell. This work opens the way with new prospects in the field of the photovoltaic one. Such structures will thus simplify the manufacturing processes of the cells; will thus reduce the costs while producing high outputs of photovoltaic conversion. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=modeling" title="modeling">modeling</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation" title=" simulation"> simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=multijunction" title=" multijunction"> multijunction</a>, <a href="https://publications.waset.org/abstracts/search?q=optimization" title=" optimization"> optimization</a>, <a href="https://publications.waset.org/abstracts/search?q=silvaco%20ATLAS" title=" silvaco ATLAS"> silvaco ATLAS</a> </p> <a href="https://publications.waset.org/abstracts/35670/optimal-design-of-ingapgaas-heterojonction-solar-cell" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/35670.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">620</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">24</span> The Choicest Design of InGaP/GaAs Heterojunction Solar Cell</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Djaafar%20Fatiha">Djaafar Fatiha</a>, <a href="https://publications.waset.org/abstracts/search?q=Ghalem%20Bachir"> Ghalem Bachir</a>, <a href="https://publications.waset.org/abstracts/search?q=Hadri%20Bagdad"> Hadri Bagdad</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We studied mainly the influence of temperature, thickness, molar fraction and the doping of the various layers (emitter, base, BSF and window) on the performances of a photovoltaic solar cell. In a first stage, we optimized the performances of the InGaP/GaAs dual-junction solar cell while varying its operation temperature from 275°K to 375 °K with an increment of 25°C using a virtual wafer fabrication TCAD Silvaco. The optimization at 300 °K led to the following result: Icc =14.22 mA/cm2, Voc =2.42V, FF=91.32 %, η= 22.76 % which is close with those found in the literature. In a second stage ,we have varied the molar fraction of different layers as well their thickness and the doping of both emitters and bases and we have registered the result of each variation until obtaining an optimal efficiency of the proposed solar cell at 300°K which was of Icc=14.35mA/cm2,Voc=2.47V,FF=91.34,and η=23.33% for In(1-x)Ga(x)P molar fraction( x=0.5).The elimination of a layer BSF on the back face of our cell, enabled us to make a remarkable improvement of the short-circuit current (Icc=14.70 mA/cm2) and a decrease in open circuit voltage Voc and output η which reached 1.46V and 11.97% respectively. Therefore, we could determine the critical parameters of the cell and optimize its various technological parameters to obtain the best performance for a dual junction solar cell .This work opens the way with new prospects in the field of the photovoltaic one. Such structures will thus simplify the manufacturing processes of the cells; will thus reduce the costs while producing high outputs of photovoltaic conversion. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=modeling" title="modeling">modeling</a>, <a href="https://publications.waset.org/abstracts/search?q=simulation" title=" simulation"> simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=multijunction" title=" multijunction"> multijunction</a>, <a href="https://publications.waset.org/abstracts/search?q=optimization" title=" optimization"> optimization</a>, <a href="https://publications.waset.org/abstracts/search?q=Silvaco%20ATLAS" title=" Silvaco ATLAS"> Silvaco ATLAS</a> </p> <a href="https://publications.waset.org/abstracts/37022/the-choicest-design-of-ingapgaas-heterojunction-solar-cell" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/37022.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">503</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">23</span> Performance Improvement of SOI-Tri Gate FinFET Transistor Using High-K Dielectric with Metal Gate </h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Rahou">Fatima Zohra Rahou</a>, <a href="https://publications.waset.org/abstracts/search?q=A.Guen%20Bouazza"> A.Guen Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouazza"> B. Bouazza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> SOI TRI GATE FinFET transistors have emerged as novel devices due to its simple architecture and better performance: better control over short channel effects (SCEs) and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2 nm, leakage currents due to tunneling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO2 gate oxide with a high-κ material allows increased gate capacitance without the associated leakage effects. In this paper, SOI TRI-GATE FinFET structure with use of high K dielectric materials (HfO2) and SiO2 dielectric are simulated using the 3-D device simulator Devedit and Atlas of TCAD Silvaco. The simulated results exhibits significant improvements in the performances of SOI TRI GATE FinFET with gate oxide HfO2 compared with conventional gate oxide SiO2 for the same structure. SOI TRI-GATE FinFET structure with the use of high K materials (HfO2) in gate oxide results into the increase in saturation current, threshold voltage, on-state current and Ion/Ioff ratio while off-state current, subthreshold slope and DIBL effect are decreased. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=technology%20SOI" title="technology SOI">technology SOI</a>, <a href="https://publications.waset.org/abstracts/search?q=short-channel%20effects%20%28SCEs%29" title=" short-channel effects (SCEs)"> short-channel effects (SCEs)</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-gate%20SOI%20MOSFET" title=" multi-gate SOI MOSFET"> multi-gate SOI MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=SOI-TRI%20Gate%20FinFET" title=" SOI-TRI Gate FinFET"> SOI-TRI Gate FinFET</a>, <a href="https://publications.waset.org/abstracts/search?q=high-K%20dielectric" title=" high-K dielectric"> high-K dielectric</a>, <a href="https://publications.waset.org/abstracts/search?q=Silvaco%20software" title=" Silvaco software"> Silvaco software</a> </p> <a href="https://publications.waset.org/abstracts/31441/performance-improvement-of-soi-tri-gate-finfet-transistor-using-high-k-dielectric-with-metal-gate" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/31441.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">347</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">22</span> High Performance of Square GAA SOI MOSFET Using High-k Dielectric with Metal Gate</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Rahou">Fatima Zohra Rahou</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Guen%20Bouazza"> A. Guen Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouazza"> B. Bouazza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Multi-gate SOI MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with a scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high -k dielectric materials as oxide layer at different places in MOSFET structures. One of the most important multi-gate structures is square GAA SOI MOSFET that is a strong candidate for the next generation nanoscale devices; show an even stronger control of short channel effects. In this paper, GAA SOI MOSFET structure with using high -k dielectrics materials Al2O3 (k~9), HfO2 (k~20), La2O3 (k~30) and metal gate TiN are simulated by using 3-D device simulator DevEdit and Atlas of SILVACO TCAD tools. Square GAA SOI MOSFET transistor with High-k HfO2 gate dielectrics and TiN metal gate exhibits significant improvements performances compared to Al2O3 and La2O3 dielectrics for the same structure. Simulation results of GAA SOI MOSFET transistor with HfO2 dielectric show the increase in saturation current and Ion/Ioff ratio while leakage current, subthreshold slope and DIBL effect are decreased. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=technology%20SOI" title="technology SOI">technology SOI</a>, <a href="https://publications.waset.org/abstracts/search?q=short-channel%20effects%20%28SCEs%29" title=" short-channel effects (SCEs)"> short-channel effects (SCEs)</a>, <a href="https://publications.waset.org/abstracts/search?q=multi-gate%20SOI%20MOSFET" title=" multi-gate SOI MOSFET"> multi-gate SOI MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=square%20GAA%20SOI%20MOSFET" title=" square GAA SOI MOSFET"> square GAA SOI MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=high-k%20dielectric" title=" high-k dielectric"> high-k dielectric</a>, <a href="https://publications.waset.org/abstracts/search?q=Silvaco%20software" title=" Silvaco software "> Silvaco software </a> </p> <a href="https://publications.waset.org/abstracts/38250/high-performance-of-square-gaa-soi-mosfet-using-high-k-dielectric-with-metal-gate" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/38250.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">262</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">21</span> Fabrication and Analysis of Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Deepika%20Sharma">Deepika Sharma</a>, <a href="https://publications.waset.org/abstracts/search?q=Bal%20Krishan"> Bal Krishan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, the structure of N-channel VDMOS was designed and analyzed using Silvaco TCAD tools by varying N+ source doping concentration, P-Body doping concentration, gate oxide thickness and the diffuse time. VDMOS is considered to be ideal power switches due to its high input impedance and fast switching speed. The performance of the device was analyzed from the Ids vs Vgs curve. The electrical characteristics such as threshold voltage, gate oxide thickness and breakdown voltage for the proposed device structures were extarcted. Effect of epitaxial layer on various parameters is also observed. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=on-resistance" title="on-resistance">on-resistance</a>, <a href="https://publications.waset.org/abstracts/search?q=threshold%20voltage" title=" threshold voltage"> threshold voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=epitaxial%20layer" title=" epitaxial layer"> epitaxial layer</a>, <a href="https://publications.waset.org/abstracts/search?q=breakdown%20voltage" title=" breakdown voltage"> breakdown voltage</a> </p> <a href="https://publications.waset.org/abstracts/53747/fabrication-and-analysis-of-vertical-double-diffused-metal-oxide-semiconductor-vdmos" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/53747.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">327</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">20</span> First Investigation on CZTS Electron affinity and Thickness Optimization using SILVACO-Atlas 2D Simulation</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Zeineb%20Seboui">Zeineb Seboui</a>, <a href="https://publications.waset.org/abstracts/search?q=Samar%20Dabbabi"> Samar Dabbabi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we study the performance of Cu₂ZnSnS₄ (CZTS) based solar cell. In our knowledge, it is for the first time that the FTO/ZnO:Co/CZTS structure is simulated using the SILVACO-Atlas 2D simulation. Cu₂ZnSnS₄ (CZTS), ZnO:Co and FTO (SnO₂:F) layers have been deposited on glass substrates by the spray pyrolysis technique. The extracted physical properties, such as thickness and optical parameters of CZTS layer, are considered to create a new input data of CZTS based solar cell. The optimization of CZTS electron affinity and thickness is performed to have the best FTO/ZnO: Co/CZTS efficiency. The use of CZTS absorber layer with 3.99 eV electron affinity and 3.2 µm in thickness leads to the higher efficiency of 16.86 %, which is very important in the development of new technologies and new solar cell devices. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=CZTS%20solar%20cell" title="CZTS solar cell">CZTS solar cell</a>, <a href="https://publications.waset.org/abstracts/search?q=characterization" title=" characterization"> characterization</a>, <a href="https://publications.waset.org/abstracts/search?q=electron%20affinity" title=" electron affinity"> electron affinity</a>, <a href="https://publications.waset.org/abstracts/search?q=thickness" title=" thickness"> thickness</a>, <a href="https://publications.waset.org/abstracts/search?q=SILVACO-atlas%202D%20simulation" title=" SILVACO-atlas 2D simulation"> SILVACO-atlas 2D simulation</a> </p> <a href="https://publications.waset.org/abstracts/166352/first-investigation-on-czts-electron-affinity-and-thickness-optimization-using-silvaco-atlas-2d-simulation" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/166352.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">77</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">19</span> Technology Computer Aided Design Simulation of Space Charge Limited Conduction in Polycrystalline Thin Films</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kunj%20Parikh">Kunj Parikh</a>, <a href="https://publications.waset.org/abstracts/search?q=S.%20Bhattacharya"> S. Bhattacharya</a>, <a href="https://publications.waset.org/abstracts/search?q=V.%20Natarajan"> V. Natarajan</a> </p> <p class="card-text"><strong>Abstract:</strong></p> TCAD numerical simulation is one of the most tried and tested powerful tools for designing devices in semiconductor foundries worldwide. It has also been used to explain conduction in organic thin films where the processing temperature is often enough to make homogeneous samples (often imperfect, but homogeneously imperfect). In this report, we have presented the results of TCAD simulation in multi-grain thin films. The work has addressed the inhomogeneity in one dimension, but can easily be extended to two and three dimensions. The effect of grain boundaries has mainly been approximated as barriers located at the junction between two adjacent grains. The effect of the value of grain boundary barrier, the bulk traps, and the measurement temperature have been investigated. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=polycrystalline%20thin%20films" title="polycrystalline thin films">polycrystalline thin films</a>, <a href="https://publications.waset.org/abstracts/search?q=space%20charge%20limited%20conduction" title=" space charge limited conduction"> space charge limited conduction</a>, <a href="https://publications.waset.org/abstracts/search?q=Technology%20Computer-Aided%20Design%20%28TCAD%29%20simulation" title=" Technology Computer-Aided Design (TCAD) simulation"> Technology Computer-Aided Design (TCAD) simulation</a>, <a href="https://publications.waset.org/abstracts/search?q=traps" title=" traps"> traps</a> </p> <a href="https://publications.waset.org/abstracts/87550/technology-computer-aided-design-simulation-of-space-charge-limited-conduction-in-polycrystalline-thin-films" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/87550.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">214</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">18</span> A Physically-Based Analytical Model for Reduced Surface Field Laterally Double Diffused MOSFETs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Abouelatta">M. Abouelatta</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Shaker"> A. Shaker</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20El-Banna"> M. El-Banna</a>, <a href="https://publications.waset.org/abstracts/search?q=G.%20T.%20Sayah"> G. T. Sayah</a>, <a href="https://publications.waset.org/abstracts/search?q=C.%20Gontrand"> C. Gontrand</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Zekry"> A. Zekry</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a methodology for physically modeling the intrinsic MOS part and the drift region of the n-channel Laterally Double-diffused MOSFET (LDMOS) is presented. The basic physical effects like velocity saturation, mobility reduction, and nonuniform impurity concentration in the channel are taken into consideration. The analytical model is implemented using MATLAB. A comparison of the simulations from technology computer aided design (TCAD) and that from the proposed analytical model, at room temperature, shows a satisfactory accuracy which is less than 5% for the whole voltage domain. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=LDMOS" title="LDMOS">LDMOS</a>, <a href="https://publications.waset.org/abstracts/search?q=MATLAB" title=" MATLAB"> MATLAB</a>, <a href="https://publications.waset.org/abstracts/search?q=RESURF" title=" RESURF"> RESURF</a>, <a href="https://publications.waset.org/abstracts/search?q=modeling" title=" modeling"> modeling</a>, <a href="https://publications.waset.org/abstracts/search?q=TCAD" title=" TCAD"> TCAD</a> </p> <a href="https://publications.waset.org/abstracts/73261/a-physically-based-analytical-model-for-reduced-surface-field-laterally-double-diffused-mosfets" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73261.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">198</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">17</span> 3D Simulation and Modeling of Magnetic-Sensitive on n-type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DGMOSFET)</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=M.%20Kessi">M. Kessi</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We investigated the effect of the magnetic field on carrier transport phenomena in the transistor channel region of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This explores the Lorentz force and basic physical properties of solids exposed to a constant external magnetic field. The magnetic field modulates the electrons and potential distribution in the case of silicon Tunnel FETs. This modulation shows up in the device's external electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), the threshold voltage (VTH), the magneto-transconductance (gm) and the output magneto-conductance (gDS) of Tunnel FET. Moreover, the channel doping concentration and potential distribution are obtained using the numerical method by solving Poisson’s transport equation in 3D modules semiconductor magnetic sensors available in Silvaco TCAD tools. The numerical simulations of the magnetic nano-sensors are relatively new. In this work, we present the results of numerical simulations based on 3D magnetic sensors. The results show excellent accuracy comportment and good agreement compared with that obtained in the experimental study of MOSFETs technology. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=single-gate%20MOSFET" title="single-gate MOSFET">single-gate MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=magnetic%20field" title=" magnetic field"> magnetic field</a>, <a href="https://publications.waset.org/abstracts/search?q=hall%20field" title=" hall field"> hall field</a>, <a href="https://publications.waset.org/abstracts/search?q=Lorentz%20force" title=" Lorentz force"> Lorentz force</a> </p> <a href="https://publications.waset.org/abstracts/142674/3d-simulation-and-modeling-of-magnetic-sensitive-on-n-type-double-gate-metal-oxide-semiconductor-field-effect-transistor-dgmosfet" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/142674.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">181</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">16</span> Design and Modelling of Ge/GaAs Hetero-structure Bipolar Transistor</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Samson%20Mil%27shtein">Samson Mil'shtein</a>, <a href="https://publications.waset.org/abstracts/search?q=Dhawal%20N.%20Asthana"> Dhawal N. Asthana</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The presented heterostructure n-p-n bipolar transistor is comprised of Ge/GaAs heterojunctions consisting of 0.15µm thick emitter and 0.65µm collector junctions. High diffusivity of carriers in GaAs base was major motivation of current design. We avoided grading of the base which is common in heterojunction bipolar transistors, in order to keep the electron diffusivity as high as possible. The electrons injected into the 0.25µm thick p-type GaAs base with not very high doping (1017cm-3). The designed HBT enables cut off frequency on the order of 150GHz. The Ge/GaAs heterojunctions presented in our paper have proved to work better than comparable HBTs having GaAs bases and emitter/collector junctions made, for example, of AlGaAs/GaAs or other III-V compound semiconductors. The difference in lattice constants between Ge and GaAs is less than 2%. Therefore, there is no need of transition layers between Ge emitter and GaAs base. Significant difference in energy gap of these two materials presents new scope for improving performance of the emitter. With the complete structure being modelled and simulated using TCAD SILVACO, the collector/ emitter offset voltage of the device has been limited to a reasonable value of 63 millivolts by the dint of low energy band gap value associated with Ge emitter. The efficiency of the emitter in our HBT is 86%. Use of Germanium in the emitter and collector regions presents new opportunities for integration of this vertical device structure into silicon substrate. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=Germanium" title="Germanium">Germanium</a>, <a href="https://publications.waset.org/abstracts/search?q=Gallium%20Arsenide" title=" Gallium Arsenide"> Gallium Arsenide</a>, <a href="https://publications.waset.org/abstracts/search?q=heterojunction%20bipolar%20transistor" title=" heterojunction bipolar transistor"> heterojunction bipolar transistor</a>, <a href="https://publications.waset.org/abstracts/search?q=high%20cut-off%20frequency" title=" high cut-off frequency"> high cut-off frequency</a> </p> <a href="https://publications.waset.org/abstracts/139611/design-and-modelling-of-gegaas-hetero-structure-bipolar-transistor" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/139611.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">420</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">15</span> Simulation of High Performance Nanoscale Partially Depleted SOI n-MOSFET Transistors</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Fatima%20Zohra%20Rahou">Fatima Zohra Rahou</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Guen%20Bouazza"> A. Guen Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouazza"> B. Bouazza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=SOI%20technology" title="SOI technology">SOI technology</a>, <a href="https://publications.waset.org/abstracts/search?q=PDSOI%20MOSFET" title=" PDSOI MOSFET"> PDSOI MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=FDSOI%20MOSFET" title=" FDSOI MOSFET"> FDSOI MOSFET</a>, <a href="https://publications.waset.org/abstracts/search?q=kink%20effect" title=" kink effect"> kink effect</a> </p> <a href="https://publications.waset.org/abstracts/61667/simulation-of-high-performance-nanoscale-partially-depleted-soi-n-mosfet-transistors" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/61667.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">258</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">14</span> SCR-Based Advanced ESD Protection Device for Low Voltage Application</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bo%20Bae%20Song">Bo Bae Song</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung%20Seok%20Lee"> Byung Seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hyun%20young%20Kim"> Hyun young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3, and D4). <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/21774/scr-based-advanced-esd-protection-device-for-low-voltage-application" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/21774.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">575</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">13</span> Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo">Yong Seo Koo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jong%20Ho%20Nam"> Jong Ho Nam</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Nam%20Choi"> Yong Nam Choi</a>, <a href="https://publications.waset.org/abstracts/search?q=Dae%20Yeol%20Yoo"> Dae Yeol Yoo</a>, <a href="https://publications.waset.org/abstracts/search?q=Jung%20Woo%20Han"> Jung Woo Han</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electro-static%20discharge%20%28ESD%29" title="electro-static discharge (ESD)">electro-static discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=protection%20circuit" title=" protection circuit"> protection circuit</a> </p> <a href="https://publications.waset.org/abstracts/9524/analysis-of-scr-based-esd-protection-circuit-on-holding-voltage-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/9524.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">379</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">12</span> Impact of Fin Cross Section Shape on Potential Distribution of Nanoscale Trapezoidal FinFETs</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ahmed%20Nassim%20Moulai%20Khatir">Ahmed Nassim Moulai Khatir</a> </p> <p class="card-text"><strong>Abstract:</strong></p> Fin field effect transistors (FinFETs) deliver superior levels of scalability than the classical structure of MOSFETs by offering the elimination of short channel effects. Modern FinFETs are 3D structures that rise above the planar substrate, but some of these structures have inclined surfaces, which results in trapezoidal cross sections instead of rectangular sections usually used. Fin cross section shape of FinFETs results in some device issues, like potential distribution performance. This work analyzes that impact with three-dimensional numeric simulation of several triple-gate FinFETs with various top and bottom widths of fin. Results of the simulation show that the potential distribution and the electrical field in the fin depend on the sidewall inclination angle. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=FinFET" title="FinFET">FinFET</a>, <a href="https://publications.waset.org/abstracts/search?q=cross%20section%20shape" title=" cross section shape"> cross section shape</a>, <a href="https://publications.waset.org/abstracts/search?q=SILVACO" title=" SILVACO"> SILVACO</a>, <a href="https://publications.waset.org/abstracts/search?q=trapezoidal%20FinFETs" title=" trapezoidal FinFETs"> trapezoidal FinFETs</a> </p> <a href="https://publications.waset.org/abstracts/186029/impact-of-fin-cross-section-shape-on-potential-distribution-of-nanoscale-trapezoidal-finfets" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/186029.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">47</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">11</span> Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/56482/analysis-of-stacked-scr-based-esd-protection-circuit-with-low-trigger-voltage-and-latch-up-immunity" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/56482.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">524</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">10</span> A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-il%20Do">Kyoung-il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Byung-seok%20Lee"> Byung-seok Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-guk%20Chae"> Hee-guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-yun%20Seo%20Yong-seo%20Koo"> Jeong-yun Seo Yong-seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a> </p> <a href="https://publications.waset.org/abstracts/89519/a-silicon-controlled-rectifier-based-esd-protection-circuit-with-high-holding-voltage-and-high-robustness-characteristics" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/89519.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">396</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">9</span> Suppressing Ambipolar Conduction Using Dual Material Gate in Tunnel-FETs Having Heavily Doped Drain</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Dawit%20Burusie%20Abdi">Dawit Burusie Abdi</a>, <a href="https://publications.waset.org/abstracts/search?q=Mamidala%20Jagadesh%20Kumar"> Mamidala Jagadesh Kumar</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=dual%20material%20gate" title="dual material gate">dual material gate</a>, <a href="https://publications.waset.org/abstracts/search?q=suppressing%20ambipolar%20current" title=" suppressing ambipolar current"> suppressing ambipolar current</a>, <a href="https://publications.waset.org/abstracts/search?q=symmetrically%20doped%20TFET" title=" symmetrically doped TFET"> symmetrically doped TFET</a>, <a href="https://publications.waset.org/abstracts/search?q=tunnel%20FETs" title=" tunnel FETs"> tunnel FETs</a>, <a href="https://publications.waset.org/abstracts/search?q=PNPN%20TFET" title=" PNPN TFET"> PNPN TFET</a> </p> <a href="https://publications.waset.org/abstracts/42462/suppressing-ambipolar-conduction-using-dual-material-gate-in-tunnel-fets-having-heavily-doped-drain" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/42462.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">370</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">8</span> Etude 3D Quantum Numerical Simulation of Performance in the HEMT</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=A.%20Boursali">A. Boursali</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Guen-Bouazza"> A. Guen-Bouazza</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We present a simulation of a HEMT (high electron mobility transistor) structure with and without a field plate. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 15 nm, InAlN/GaN heterostructure and field plate structure, making it superior to modern HEMTs when compared with otherwise equivalent devices. This improves the ability to bear the burden of the current density passes in the channel. We have demonstrated an excellent current density, as high as 2.05 A/m, a peak extrinsic transconductance of 0.59S/m at VDS=2 V, and cutting frequency cutoffs of 638 GHz in the first HEMT and 463 GHz for Field plate HEMT., maximum frequency of 1.7 THz, maximum efficiency of 73%, maximum breakdown voltage of 400 V, leakage current density IFuite=1 x 10-26 A, DIBL=33.52 mV/V and an ON/OFF current density ratio higher than 1 x 1010. These values were determined through the simulation by deriving genetic and Monte Carlo algorithms that optimize the design and the future of this technology. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=HEMT" title="HEMT">HEMT</a>, <a href="https://publications.waset.org/abstracts/search?q=silvaco" title=" silvaco"> silvaco</a>, <a href="https://publications.waset.org/abstracts/search?q=field%20plate" title=" field plate"> field plate</a>, <a href="https://publications.waset.org/abstracts/search?q=genetic%20algorithm" title=" genetic algorithm"> genetic algorithm</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum" title=" quantum"> quantum</a> </p> <a href="https://publications.waset.org/abstracts/39443/etude-3d-quantum-numerical-simulation-of-performance-in-the-hemt" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/39443.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">349</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">7</span> 3D Quantum Simulation of a HEMT Device Performance</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Z.%20Kourdi">Z. Kourdi</a>, <a href="https://publications.waset.org/abstracts/search?q=B.%20Bouazza"> B. Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=M.%20Khaouani"> M. Khaouani</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Guen-Bouazza"> A. Guen-Bouazza</a>, <a href="https://publications.waset.org/abstracts/search?q=Z.%20Djennati"> Z. Djennati</a>, <a href="https://publications.waset.org/abstracts/search?q=A.%20Boursali"> A. Boursali</a> </p> <p class="card-text"><strong>Abstract:</strong></p> We present a simulation of a HEMT (high electron mobility transistor) structure with and without a field plate. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 15 nm, InAlN/GaN heterostructure and field plate structure, making it superior to modern HEMTs when compared with otherwise equivalent devices. This improves the ability to bear the burden of the current density passes in the channel. We have demonstrated an excellent current density, as high as 2.05 A/mm, a peak extrinsic transconductance of 590 mS/mm at VDS=2 V, and cutting frequency cutoffs of 638 GHz in the first HEMT and 463 GHz for Field plate HEMT., maximum frequency of 1.7 THz, maximum efficiency of 73%, maximum breakdown voltage of 400 V, DIBL=33.52 mV/V and an ON/OFF current density ratio higher than 1 x 1010. These values were determined through the simulation by deriving genetic and Monte Carlo algorithms that optimize the design and the future of this technology. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=HEMT" title="HEMT">HEMT</a>, <a href="https://publications.waset.org/abstracts/search?q=Silvaco" title=" Silvaco"> Silvaco</a>, <a href="https://publications.waset.org/abstracts/search?q=field%20plate" title=" field plate"> field plate</a>, <a href="https://publications.waset.org/abstracts/search?q=genetic%20algorithm" title=" genetic algorithm"> genetic algorithm</a>, <a href="https://publications.waset.org/abstracts/search?q=quantum" title=" quantum"> quantum</a> </p> <a href="https://publications.waset.org/abstracts/30552/3d-quantum-simulation-of-a-hemt-device-performance" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30552.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">476</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">6</span> SCR-Stacking Structure with High Holding Voltage for IO and Power Clamp</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Hyun%20Young%20Kim">Hyun Young Kim</a>, <a href="https://publications.waset.org/abstracts/search?q=Chung%20Kwang%20Lee"> Chung Kwang Lee</a>, <a href="https://publications.waset.org/abstracts/search?q=Han%20Hee%20Cho">Han Hee Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Sang%20Woon%20Cho"> Sang Woon Cho</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong%20Seo%20Koo"> Yong Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=holding%20voltage" title=" holding voltage"> holding voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=stack" title=" stack"> stack</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a> </p> <a href="https://publications.waset.org/abstracts/30148/scr-stacking-structure-with-high-holding-voltage-for-io-and-power-clamp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/30148.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">557</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">5</span> Assessment of Highly Sensitive Dielectric Modulated GaN-FinFET for Label-Free Biosensing Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Ajay%20Kumar">Ajay Kumar</a>, <a href="https://publications.waset.org/abstracts/search?q=Neha%20Gupta"> Neha Gupta</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This work presents the sensitivity assessment of Gallium Nitride (GaN) material-based FinFET by dielectric modulation in the nanocavity gap for label-free biosensing applications. The significant deflection is observed in the electrical characteristics such as drain current (ID), transconductance (gm), surface potential, energy band profile, electric field, sub-threshold slope (SS), and threshold voltage (Vth) in the presence of biomolecules owing to GaN material. Further, the device sensitivity is evaluated to identify the effectiveness of the proposed biosensor and its capability to detect the biomolecules with high precision or accuracy. Higher sensitivity is observed for Gelatin (k=12) in terms of on-current (SION), threshold voltage (SVth), and switching ratio (SSR) by 104.88%, 82.12%, and 119.73%, respectively. This work is performed using a powerful tool 3D Sentaurus TCAD using a well-calibrated structure. All the results pave the way for GaN-FinFET as a viable candidate for label-free dielectric modulated biosensor applications. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=biosensor" title="biosensor">biosensor</a>, <a href="https://publications.waset.org/abstracts/search?q=biomolecules" title=" biomolecules"> biomolecules</a>, <a href="https://publications.waset.org/abstracts/search?q=FinFET" title=" FinFET"> FinFET</a>, <a href="https://publications.waset.org/abstracts/search?q=sensitivity" title=" sensitivity"> sensitivity</a> </p> <a href="https://publications.waset.org/abstracts/153336/assessment-of-highly-sensitive-dielectric-modulated-gan-finfet-for-label-free-biosensing-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/153336.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">204</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">4</span> Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do">Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park"> Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Hee-Guk%20Chae"> Hee-Guk Chae</a>, <a href="https://publications.waset.org/abstracts/search?q=Jeong-Yun%20Seo"> Jeong-Yun Seo</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=electrostatic%20discharge%20%28ESD%29" title="electrostatic discharge (ESD)">electrostatic discharge (ESD)</a>, <a href="https://publications.waset.org/abstracts/search?q=low%20voltage%20trigger%20silicon%20controlled%20rectifier%20%28LVTSCR%29" title=" low voltage trigger silicon controlled rectifier (LVTSCR)"> low voltage trigger silicon controlled rectifier (LVTSCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=MVTSCR" title=" MVTSCR"> MVTSCR</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a>, <a href="https://publications.waset.org/abstracts/search?q=silicon%20controlled%20rectifier%20%28SCR%29" title=" silicon controlled rectifier (SCR)"> silicon controlled rectifier (SCR)</a>, <a href="https://publications.waset.org/abstracts/search?q=latch-up" title=" latch-up"> latch-up</a> </p> <a href="https://publications.waset.org/abstracts/73702/low-trigger-voltage-silicon-controlled-rectifier-stacking-structure-with-high-holding-voltage-for-high-voltage-applications" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/73702.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">458</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">3</span> Analysis of Silicon Controlled Rectifier-Based Electrostatic Discharge Protection Circuits with Electrical Characteristics for the 5V Power Clamp</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Jun-Geol%20Park">Jun-Geol Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyoung-Il%20Do"> Kyoung-Il Do</a>, <a href="https://publications.waset.org/abstracts/search?q=Min-Ju%20Kwon"> Min-Ju Kwon</a>, <a href="https://publications.waset.org/abstracts/search?q=Kyung-Hyun%20Park"> Kyung-Hyun Park</a>, <a href="https://publications.waset.org/abstracts/search?q=Yong-Seo%20Koo"> Yong-Seo Koo</a> </p> <p class="card-text"><strong>Abstract:</strong></p> This paper analyzed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuits with the turn-on time characteristics. The structures are the LVTSCR (Low Voltage Triggered SCR), the ZTSCR (Zener Triggered SCR) and the PTSCR (P-Substrate Triggered SCR). The three structures are for the 5V power clamp. In general, the structures with the low trigger voltage structure can have the fast turn-on characteristics than other structures. All the ESD protection circuits have the low trigger voltage by using the N+ bridge region of LVTSCR, by using the zener diode structure of ZTSCR, by increasing the trigger current of PTSCR. The simulation for the comparison with the turn-on time was conducted by the Synopsys TCAD simulator. As the simulation results, the LVTSCR has the turn-on time of 2.8 ns, ZTSCR of 2.1 ns and the PTSCR of 2.4 ns. The HBM simulation results, however, show that the PTSCR is the more robust structure of 430K in HBM 8kV standard than 450K of LVTSCR and 495K of ZTSCR. Therefore the PTSCR is the most effective ESD protection circuit for the 5V power clamp. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=ESD" title="ESD">ESD</a>, <a href="https://publications.waset.org/abstracts/search?q=SCR" title=" SCR"> SCR</a>, <a href="https://publications.waset.org/abstracts/search?q=turn-on%20time" title=" turn-on time"> turn-on time</a>, <a href="https://publications.waset.org/abstracts/search?q=trigger%20voltage" title=" trigger voltage"> trigger voltage</a>, <a href="https://publications.waset.org/abstracts/search?q=power%20clamp" title=" power clamp"> power clamp</a> </p> <a href="https://publications.waset.org/abstracts/65650/analysis-of-silicon-controlled-rectifier-based-electrostatic-discharge-protection-circuits-with-electrical-characteristics-for-the-5v-power-clamp" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/65650.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">348</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">2</span> Modeling and Characterization of Organic LED</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Bouanati%20Sidi%20Mohammed">Bouanati Sidi Mohammed</a>, <a href="https://publications.waset.org/abstracts/search?q=N.%20E.%20Chabane%20Sari"> N. E. Chabane Sari</a>, <a href="https://publications.waset.org/abstracts/search?q=Mostefa%20Kara%20Selma"> Mostefa Kara Selma </a> </p> <p class="card-text"><strong>Abstract:</strong></p> It is well-known that Organic light emitting diodes (OLEDs) are attracting great interest in the display technology industry due to their many advantages, such as low price of manufacturing, large-area of electroluminescent display, various colors of emission included white light. Recently, there has been much progress in understanding the device physics of OLEDs and their basic operating principles. In OLEDs, Light emitting is the result of the recombination of electron and hole in light emitting layer, which are injected from cathode and anode. For improve luminescence efficiency, it is needed that hole and electron pairs exist affluently and equally and recombine swiftly in the emitting layer. The aim of this paper is to modeling polymer LED and OLED made with small molecules for studying the electrical and optical characteristics. The first simulation structures used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2’-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode usually an indium tin oxide (ITO) substrate, and a cathode, such as Al. In the second structure we replace MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq3). We choose MEH-PPV because of it's solubility in common organic solvents, in conjunction with a low operating voltage for light emission and relatively high conversion efficiency and Alq3 because it is one of the most important host materials used in OLEDs. In this simulation, the Poole-Frenkel- like mobility model and the Langevin bimolecular recombination model have been used as the transport and recombination mechanism. These models are enabled in ATLAS -SILVACO software. The influence of doping and thickness on I(V) characteristics and luminescence, are reported. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=organic%20light%20emitting%20diode" title="organic light emitting diode">organic light emitting diode</a>, <a href="https://publications.waset.org/abstracts/search?q=polymer%20lignt%20emitting%20diode" title=" polymer lignt emitting diode"> polymer lignt emitting diode</a>, <a href="https://publications.waset.org/abstracts/search?q=organic%20materials" title=" organic materials"> organic materials</a>, <a href="https://publications.waset.org/abstracts/search?q=hexoxy-phenylenevinylene" title=" hexoxy-phenylenevinylene"> hexoxy-phenylenevinylene</a> </p> <a href="https://publications.waset.org/abstracts/29434/modeling-and-characterization-of-organic-led" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/29434.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">554</span> </span> </div> </div> <div class="card paper-listing mb-3 mt-3"> <h5 class="card-header" style="font-size:.9rem"><span class="badge badge-info">1</span> Resonant Tunnelling Diode Output Characteristics Dependence on Structural Parameters: Simulations Based on Non-Equilibrium Green Functions</h5> <div class="card-body"> <p class="card-text"><strong>Authors:</strong> <a href="https://publications.waset.org/abstracts/search?q=Saif%20Alomari">Saif Alomari</a> </p> <p class="card-text"><strong>Abstract:</strong></p> The paper aims at giving physical and mathematical descriptions of how the structural parameters of a resonant tunnelling diode (RTD) affect its output characteristics. Specifically, the value of the peak voltage, peak current, peak to valley current ratio (PVCR), and the difference between peak and valley voltages and currents ΔV and ΔI. A simulation-based approach using the Non-Equilibrium Green Function (NEGF) formalism based on the Silvaco ATLAS simulator is employed to conduct a series of designed experiments. These experiments show how the doping concentration in the emitter and collector layers, their thicknesses, and the width of the barriers and the quantum well influence the above-mentioned output characteristics. Each of these parameters was systematically changed while holding others fixed in each set of experiments. Factorial experiments are outside the scope of this work and will be investigated in future. The physics involved in the operation of the device is thoroughly explained and mathematical models based on curve fitting and underlaying physical principles are deduced. The models can be used to design devices with predictable output characteristics. These models were found absent in the literature that the author acanned. Results show that the doping concentration in each region has an effect on the value of the peak voltage. It is found that increasing the carrier concentration in the collector region shifts the peak to lower values, whereas increasing it in the emitter shifts the peak to higher values. In the collector’s case, the shift is either controlled by the built-in potential resulting from the concentration gradient or the conductivity enhancement in the collector. The shift to higher voltages is found to be also related to the location of the Fermi-level. The thicknesses of these layers play a role in the location of the peak as well. It was found that increasing the thickness of each region shifts the peak to higher values until a specific characteristic length, afterwards the peak becomes independent of the thickness. Finally, it is shown that the thickness of the barriers can be optimized for a particular well width to produce the highest PVCR or the highest ΔV and ΔI. The location of the peak voltage is important in optoelectronic applications of RTDs where the operating point of the device is usually the peak voltage point. Furthermore, the PVCR, ΔV, and ΔI are of great importance for building RTD-based oscillators as they affect the frequency response and output power of the oscillator. <p class="card-text"><strong>Keywords:</strong> <a href="https://publications.waset.org/abstracts/search?q=peak%20to%20valley%20ratio" title="peak to valley ratio">peak to valley ratio</a>, <a href="https://publications.waset.org/abstracts/search?q=peak%20voltage%20shift" title=" peak voltage shift"> peak voltage shift</a>, <a href="https://publications.waset.org/abstracts/search?q=resonant%20tunneling%20diodes" title=" resonant tunneling diodes"> resonant tunneling diodes</a>, <a href="https://publications.waset.org/abstracts/search?q=structural%20parameters" title=" structural parameters"> structural parameters</a> </p> <a href="https://publications.waset.org/abstracts/137078/resonant-tunnelling-diode-output-characteristics-dependence-on-structural-parameters-simulations-based-on-non-equilibrium-green-functions" class="btn btn-primary btn-sm">Procedia</a> <a href="https://publications.waset.org/abstracts/137078.pdf" target="_blank" class="btn btn-primary btn-sm">PDF</a> <span class="bg-info text-light px-1 py-1 float-right rounded"> Downloads <span class="badge badge-light">142</span> </span> </div> </div> </div> </main> <footer> <div id="infolinks" class="pt-3 pb-2"> <div class="container"> <div style="background-color:#f5f5f5;" class="p-3"> <div class="row"> <div class="col-md-2"> <ul class="list-unstyled"> About <li><a href="https://waset.org/page/support">About Us</a></li> <li><a href="https://waset.org/page/support#legal-information">Legal</a></li> <li><a target="_blank" rel="nofollow" href="https://publications.waset.org/static/files/WASET-16th-foundational-anniversary.pdf">WASET celebrates its 16th foundational anniversary</a></li> </ul> </div> <div class="col-md-2"> <ul class="list-unstyled"> Account <li><a href="https://waset.org/profile">My Account</a></li> </ul> </div> <div 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