AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers

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} div.type-section h2 { font-size: 20px; line-height: 26px; font-weight: 300; } div.type-section h3 { margin-left: 15px; margin-bottom: 0px; font-weight: 300; } .journal-tabs .tab-title.active a { } </style> <link rel="stylesheet" href="https://pub.mdpi-res.com/assets/css/slick.css?f38b2db10e01b157?1732286508"> <meta name="title" content="AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers"> <meta name="description" content="The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 109/cm2 is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W." > <link rel="image_src" href="https://pub.mdpi-res.com/img/journals/crystals-logo.png?a2c22e8538083c0b" > <meta name="dc.title" content="AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers"> <meta name="dc.creator" content="Jian Li"> <meta name="dc.creator" content="Yan Maidebura"> <meta name="dc.creator" content="Yang Zhang"> <meta name="dc.creator" content="Gang Wu"> <meta name="dc.creator" content="Yanmei Su"> <meta name="dc.creator" content="Konstantin Zhuravlev"> <meta name="dc.creator" content="Xin Wei"> <meta name="dc.type" content="Article"> <meta name="dc.source" content="Crystals 2024, Vol. 14, Page 952"> <meta name="dc.date" content="2024-10-31"> <meta name ="dc.identifier" content="10.3390/cryst14110952"> <meta name="dc.publisher" content="Multidisciplinary Digital Publishing Institute"> <meta name="dc.rights" content="http://creativecommons.org/licenses/by/3.0/"> <meta name="dc.format" content="application/pdf" > <meta name="dc.language" content="en" > <meta name="dc.description" content="The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 109/cm2 is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W." > <meta name="dc.subject" content="AlGaN on Si" > <meta name="dc.subject" content="silicon-based photodetectors" > <meta name="dc.subject" content="UV detectors" > <meta name="dc.subject" content="buffer optimization" > <meta name ="prism.issn" content="2073-4352"> <meta name ="prism.publicationName" content="Crystals"> <meta name ="prism.publicationDate" content="2024-10-31"> <meta name ="prism.volume" content="14"> <meta name ="prism.number" content="11"> <meta name ="prism.section" content="Article" > <meta name ="prism.startingPage" content="952" > <meta name="citation_issn" content="2073-4352"> <meta name="citation_journal_title" content="Crystals"> <meta name="citation_publisher" content="Multidisciplinary Digital Publishing Institute"> <meta name="citation_title" content="AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers"> <meta name="citation_publication_date" content="2024/11"> <meta name="citation_online_date" content="2024/10/31"> <meta name="citation_volume" content="14"> <meta name="citation_issue" content="11"> <meta name="citation_firstpage" content="952"> <meta name="citation_author" content="Li, Jian"> <meta name="citation_author" content="Maidebura, Yan"> <meta name="citation_author" content="Zhang, Yang"> <meta name="citation_author" content="Wu, Gang"> <meta name="citation_author" content="Su, Yanmei"> <meta name="citation_author" content="Zhuravlev, Konstantin"> <meta name="citation_author" content="Wei, Xin"> <meta name="citation_doi" content="10.3390/cryst14110952"> <meta name="citation_id" content="mdpi-cryst14110952"> <meta name="citation_abstract_html_url" content="https://www.mdpi.com/2073-4352/14/11/952"> <meta name="citation_pdf_url" content="https://www.mdpi.com/2073-4352/14/11/952/pdf?version=1730375855"> <link rel="alternate" type="application/pdf" title="PDF Full-Text" href="https://www.mdpi.com/2073-4352/14/11/952/pdf?version=1730375855"> <meta name="fulltext_pdf" content="https://www.mdpi.com/2073-4352/14/11/952/pdf?version=1730375855"> <meta name="citation_fulltext_html_url" content="https://www.mdpi.com/2073-4352/14/11/952/htm"> <link rel="alternate" type="text/html" title="HTML Full-Text" href="https://www.mdpi.com/2073-4352/14/11/952/htm"> <meta name="fulltext_html" content="https://www.mdpi.com/2073-4352/14/11/952/htm"> <link rel="alternate" type="text/xml" title="XML Full-Text" href="https://www.mdpi.com/2073-4352/14/11/952/xml"> <meta name="fulltext_xml" content="https://www.mdpi.com/2073-4352/14/11/952/xml"> <meta name="citation_xml_url" content="https://www.mdpi.com/2073-4352/14/11/952/xml"> <meta name="twitter:card" content="summary" /> <meta name="twitter:site" content="@MDPIOpenAccess" /> <meta name="twitter:image" content="https://pub.mdpi-res.com/img/journals/crystals-logo-social.png?a2c22e8538083c0b" /> <meta property="fb:app_id" content="131189377574"/> <meta property="og:site_name" content="MDPI"/> <meta property="og:type" content="article"/> <meta property="og:url" content="https://www.mdpi.com/2073-4352/14/11/952" /> <meta property="og:title" content="AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers" /> <meta property="og:description" content="The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 109/cm2 is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W." /> <meta property="og:image" content="https://pub.mdpi-res.com/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001-550.jpg?1730375940" /> <link rel="alternate" type="application/rss+xml" title="MDPI Publishing - Latest articles" href="https://www.mdpi.com/rss"> <meta name="google-site-verification" content="PxTlsg7z2S00aHroktQd57fxygEjMiNHydKn3txhvwY"> <meta name="facebook-domain-verification" content="mcoq8dtq6sb2hf7z29j8w515jjoof7" /> <script id="Cookiebot" data-cfasync="false" src="https://consent.cookiebot.com/uc.js" data-cbid="51491ddd-fe7a-4425-ab39-69c78c55829f" type="text/javascript" async></script>  <script type="text/plain" data-cookieconsent="statistics"> (function(w,d,s,l,i){w[l]=w[l]||[];w[l].push({'gtm.start': new Date().getTime(),event:'gtm.js'});var f=d.getElementsByTagName(s)[0], j=d.createElement(s),dl=l!='dataLayer'?'&l='+l:'';j.async=true;j.src= 'https://www.googletagmanager.com/gtm.js?id='+i+dl;f.parentNode.insertBefore(j,f); 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data-bg="creme"> <i class="fa fa-file-text"></i> </div> </div> </div> </div> </div> </div> </div> <article ><div class='html-article-content'> <span itemprop="publisher" content="Multidisciplinary Digital Publishing Institute"></span><span itemprop="url" content="https://www.mdpi.com/2073-4352/14/11/952"></span> <div class="article-icons"><span class="label openaccess" data-dropdown="drop-article-label-openaccess" aria-expanded="false">Open Access</span><span class="label articletype">Article</span></div> <h1 class="title hypothesis_container" itemprop="name"> AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers </h1> <div class="art-authors hypothesis_container"> by <span class="inlineblock "><div class='profile-card-drop' data-dropdown='profile-card-drop13342193' data-options='is_hover:true, hover_timeout:5000'> Jian Li</div><div id="profile-card-drop13342193" data-dropdown-content class="f-dropdown content 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button--color-inversed" target="_blank" rels="noopener noreferrer"> Google Scholar </a></div></div><sup> 1,2,†</sup><span style="display: inline; margin-left: 5px;"></span><a class="toEncode emailCaptcha visibility-hidden" data-author-id="13342193" href="/cdn-cgi/l/email-protection#66490508024b05010f490a49030b070f0a4b161409120305120f09084556565604500756505604565556525407575f56005651565552525604565f5252565f5652"><sup><i class="fa fa-envelope-o"></i></sup></a>, </span><span class="inlineblock "><div class='profile-card-drop' data-dropdown='profile-card-drop13342194' data-options='is_hover:true, hover_timeout:5000'> Yan Maidebura</div><div id="profile-card-drop13342194" data-dropdown-content class="f-dropdown content profile-card-content" aria-hidden="true" tabindex="-1"><div class="profile-card__title"><div class="sciprofiles-link" style="display: inline-block"><div class="sciprofiles-link__link"><img class="sciprofiles-link__image" src="/bundles/mdpisciprofileslink/img/unknown-user.png" style="width: auto; height: 16px; border-radius: 50%;"><span class="sciprofiles-link__name">Yan Maidebura</span></div></div></div><div class="profile-card__buttons" style="margin-bottom: 10px;"><a href="https://sciprofiles.com/profile/3926454?utm_source=mdpi.com&utm_medium=website&utm_campaign=avatar_name" class="button button--color-inversed" target="_blank"> SciProfiles </a><a href="https://scilit.net/scholars?q=Yan%20Maidebura" class="button button--color-inversed" target="_blank"> Scilit </a><a href="https://www.preprints.org/search?search1=Yan%20Maidebura&field1=authors" class="button button--color-inversed" target="_blank"> Preprints.org </a><a href="https://scholar.google.com/scholar?q=Yan%20Maidebura" class="button button--color-inversed" target="_blank" rels="noopener noreferrer"> Google Scholar </a></div></div><sup> 3,†</sup><span style="display: inline; margin-left: 5px;"></span><a class="toEncode emailCaptcha visibility-hidden" data-author-id="13342194" href="/cdn-cgi/l/email-protection#7d521e1319501e1a1452115218101c1411500d0f1209181e091412135e4d4d4d1e4b194d494d444f194d494c184c19494e4d4e4c184d18494e4c1b4c45"><sup><i class="fa fa-envelope-o"></i></sup></a>, </span><span class="inlineblock "><div class='profile-card-drop' data-dropdown='profile-card-drop13342195' data-options='is_hover:true, hover_timeout:5000'> Yang Zhang</div><div id="profile-card-drop13342195" data-dropdown-content class="f-dropdown content profile-card-content" aria-hidden="true" tabindex="-1"><div class="profile-card__title"><div class="sciprofiles-link" style="display: inline-block"><div class="sciprofiles-link__link"><img class="sciprofiles-link__image" src="/bundles/mdpisciprofileslink/img/unknown-user.png" style="width: auto; height: 16px; border-radius: 50%;"><span class="sciprofiles-link__name">Yang Zhang</span></div></div></div><div class="profile-card__buttons" style="margin-bottom: 10px;"><a href="https://sciprofiles.com/profile/3344439?utm_source=mdpi.com&utm_medium=website&utm_campaign=avatar_name" class="button button--color-inversed" target="_blank"> SciProfiles </a><a href="https://scilit.net/scholars?q=Yang%20Zhang" class="button button--color-inversed" target="_blank"> Scilit </a><a href="https://www.preprints.org/search?search1=Yang%20Zhang&field1=authors" class="button button--color-inversed" target="_blank"> Preprints.org </a><a href="https://scholar.google.com/scholar?q=Yang%20Zhang" class="button button--color-inversed" target="_blank" rels="noopener noreferrer"> Google Scholar </a></div></div><sup> 1,2</sup><span style="display: inline; margin-left: 5px;"></span><a class="toEncode emailCaptcha visibility-hidden" data-author-id="13342195" href="/cdn-cgi/l/email-protection#f9d69a979dd49a9e90d695d69c94989095d4898b968d9c9a8d909697dac9c9c8cbce98c89bc8cdc89dc9cac89bc8cdc89dca98c9c0c89fc8cec8cacccdc89bc8c0cccdc8c0c8cd"><sup><i class="fa fa-envelope-o"></i></sup></a>, 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href="/cdn-cgi/l/email-protection#59763a373d743a3e307635763c3438303574292b362d3c3a2d3036377a696968616e60686e686d683a68696938693a6a606938683a686d68696c6e686168386c6e6838686e"><sup><i class="fa fa-envelope-o"></i></sup></a>, </span><span class="inlineblock "><div class='profile-card-drop' data-dropdown='profile-card-drop13342198' data-options='is_hover:true, hover_timeout:5000'> Konstantin Zhuravlev</div><div id="profile-card-drop13342198" data-dropdown-content class="f-dropdown content profile-card-content" aria-hidden="true" tabindex="-1"><div class="profile-card__title"><div class="sciprofiles-link" style="display: inline-block"><div class="sciprofiles-link__link"><img class="sciprofiles-link__image" src="/bundles/mdpisciprofileslink/img/unknown-user.png" style="width: auto; height: 16px; border-radius: 50%;"><span class="sciprofiles-link__name">Konstantin Zhuravlev</span></div></div></div><div class="profile-card__buttons" style="margin-bottom: 10px;"><a 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class="affiliation "> <div class="affiliation-item"><sup>3</sup></div> <div class="affiliation-name ">Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia</div> </div> <div class="affiliation"> <div class="affiliation-item"><sup>*</sup></div> <div class="affiliation-name ">Authors to whom correspondence should be addressed. </div> </div> <div class="affiliation"> <div class="affiliation-item"><sup>†</sup></div> <div class="affiliation-name ">These authors contributed equally to this work.</div> </div> </div> </div> <div class="bib-identity" style="margin-bottom: 10px;"> <em>Crystals</em> <b>2024</b>, <em>14</em>(11), 952; <a href="https://doi.org/10.3390/cryst14110952">https://doi.org/10.3390/cryst14110952</a> </div> <div class="pubhistory" style="font-weight: bold; padding-bottom: 10px;"> <span style="display: inline-block">Submission received: 14 October 2024</span> / <span style="display: inline-block">Revised: 29 October 2024</span> / <span style="display: inline-block">Accepted: 29 October 2024</span> / <span style="display: inline-block">Published: 31 October 2024</span> </div> <div class="belongsTo" style="margin-bottom: 10px;"> (This article belongs to the Special Issue <a href=" /journal/crystals/special_issues/M60JSSI1Q2 ">Crystal Growth of III–V Semiconductors</a>)<br/> </div> <div class="highlight-box1"> <div class="download"> <a class="button button--color-inversed button--drop-down" data-dropdown="drop-download-1511309" aria-controls="drop-supplementary-1511309" aria-expanded="false"> Download <i class="material-icons">keyboard_arrow_down</i> </a> <div id="drop-download-1511309" class="f-dropdown label__btn__dropdown label__btn__dropdown--button" data-dropdown-content aria-hidden="true" tabindex="-1"> <a class="UD_ArticlePDF" href="/2073-4352/14/11/952/pdf?version=1730375855" data-name="AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers" data-journal="crystals">Download PDF</a> <br/> <a id="js-pdf-with-cover-access-captcha" href="#" data-target="/2073-4352/14/11/952/pdf-with-cover" class="accessCaptcha">Download PDF with Cover</a> <br/> <a id="js-xml-access-captcha" href="#" data-target="/2073-4352/14/11/952/xml" class="accessCaptcha">Download XML</a> <br/> <a href="/2073-4352/14/11/952/epub" id="epub_link">Download Epub</a> <br/> </div> <div class="js-browse-figures" style="display: inline-block;"> <a href="#" class="button button--color-inversed margin-bottom-10 openpopupgallery UI_BrowseArticleFigures" data-target='article-popup' data-counterslink = "https://www.mdpi.com/2073-4352/14/11/952/browse" >Browse Figures</a> </div> <div id="article-popup" class="popupgallery" style="display: inline; line-height: 200%"> <a href="https://pub.mdpi-res.com/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001.png?1730375939" title=" <strong>Figure 1</strong><br/> <p>(<b>a</b>) Scanning electron microscopy (SEM) cross-sectional image of the entire photodetector structure and microscope images under (<b>b</b>) 100× and (<b>c</b>) 1000×.</p> "> </a> <a href="https://pub.mdpi-res.com/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g002.png?1730375941" title=" <strong>Figure 2</strong><br/> <p>Processing procedure and the microscope image of fabricated photodetectors.</p> "> </a> <a href="https://pub.mdpi-res.com/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g003.png?1730375943" title=" <strong>Figure 3</strong><br/> <p>Cross-sectional TEM images of the step-graded AlGaN buffers: (<b>a</b>) STEM HAADF image, (<b>b</b>) dark field image of the Si/AlN interface, and (<b>c</b>) dark field image of the step-graded buffer. (Orange lines indicate the interface of different graded steps).</p> "> </a> <a href="https://pub.mdpi-res.com/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g004.png?1730375944" title=" <strong>Figure 4</strong><br/> <p>Cross-sectional TEM images of the step-graded AlGaN buffers: (<b>a</b>) STEM HAADF image, (<b>b</b>) bend angle of the dislocation inclination at the different step interfaces, and (<b>c</b>) dislocation annihilation efficiency at different step interfaces. (orange lines indicate the interfaces of different graded steps and the yellow lines indicate the dislocation).</p> "> </a> <a href="https://pub.mdpi-res.com/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g005.png?1730375945" title=" <strong>Figure 5</strong><br/> <p>IV profile under different annealing conditions. Inset: metal surface morphology deterioration under high-temperature long-time annealing.</p> "> </a> <a href="https://pub.mdpi-res.com/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g006.png?1730375946" title=" <strong>Figure 6</strong><br/> <p>Responsivity and the IV curve of the fabricated photodetectors.</p> "> </a> </div> <a class="button button--color-inversed" href="/2073-4352/14/11/952/notes">Versions Notes</a> </div> </div> <div class="responsive-moving-container small hidden" data-id="article-counters" style="margin-top: 15px;"></div> <div class="html-dynamic"> <section> <div class="art-abstract art-abstract-new in-tab hypothesis_container"> <p> <div><section class="html-abstract" id="html-abstract"> <h2 id="html-abstract-title">Abstract</h2><b>:</b> <div class="html-p">The integration of aluminum gallium nitride (AlGaN) with silicon substrates attracts significant attention due to the superior UV sensitivity of AlGaN and the cost-effectiveness as well as mechanical robustness of silicon. A PIN ultraviolet photodetector with a peak detection wavelength of 274 nm is presented in this paper. By employing a SiN nucleation layer and a step-graded buffer, a high-quality AlGaN-based photodetector structure with a dislocation density of 2.4 × 10<sup>9</sup>/cm<sup>2</sup> is achieved. A double-temperature annealing technique is utilized to optimize the Ohmic contact of the n-type AlGaN. The fabricated UV photodetector attains a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W.</div> </section> <div id="html-keywords"> <div class="html-gwd-group"><div id="html-keywords-title">Keywords: </div><a href="/search?q=AlGaN+on+Si">AlGaN on Si</a>; <a href="/search?q=silicon-based+photodetectors">silicon-based photodetectors</a>; <a href="/search?q=UV+detectors">UV detectors</a>; <a href="/search?q=buffer+optimization">buffer optimization</a></div> <div> </div> </div> </div> </p> </div> </section> </div> <div class="hypothesis_container"> <ul class="menu html-nav" data-prev-node="#html-quick-links-title"> </ul> <div class="html-body"> <section id='sec1-crystals-14-00952' type='intro'><h2 data-nested='1'> 1. Introduction</h2><div class='html-p'>Ultraviolet (UV) photodetectors are indispensable in various applications, including environmental monitoring, flame detection, biological research, and space exploration [<a href="#B1-crystals-14-00952" class="html-bibr">1</a>,<a href="#B2-crystals-14-00952" class="html-bibr">2</a>,<a href="#B3-crystals-14-00952" class="html-bibr">3</a>,<a href="#B4-crystals-14-00952" class="html-bibr">4</a>]. Historically, photomultiplier tubes and silicon photodetectors were the primary technologies for ultraviolet photodetectors. But they have limitations such as achieving high solar blindness and rejecting near-UV and visible spectra [<a href="#B5-crystals-14-00952" class="html-bibr">5</a>]. Aluminum gallium nitride (AlGaN) is a suitable semiconductor material ideal for ultraviolet (UV) photodetectors, especially in the solar-blind region (below 290 nm), due to its tunable wide bandgap. This property is crucial for applications requiring the detection of UV radiation while filtering out visible and near-UV wavelengths [<a href="#B6-crystals-14-00952" class="html-bibr">6</a>,<a href="#B7-crystals-14-00952" class="html-bibr">7</a>,<a href="#B8-crystals-14-00952" class="html-bibr">8</a>,<a href="#B9-crystals-14-00952" class="html-bibr">9</a>]. The tunability of AlGaN’s bandgap, achieved through the modulation of the aluminum content, enables a variation in bandgap energy ranging from 3.39 to 6.024 eV, effectively encompassing the ultraviolet spectrum and particularly the entire solar-blind wavelength region. This characteristic is highly advantageous for the development of efficient solar-blind photodetectors.</div><div class='html-p'>While sapphire has traditionally been the preferred substrate for AlGaN-based photodetectors due to its UV transparency, the use of silicon (Si) substrates is becoming increasingly popular because of their lower cost, compatibility with standard semiconductor processes, and availability in large diameters [<a href="#B10-crystals-14-00952" class="html-bibr">10</a>]. However, significant challenges arise when growing AlGaN on Si, including a substantial lattice mismatch (~17%) and thermal expansion differences that lead to high dislocation densities and potential cracking. These issues can severely deteriorate the performance of the photodetectors, making it necessary to develop advanced techniques for enhancing the crystal quality of the AlGaN layers grown on Si [<a href="#B11-crystals-14-00952" class="html-bibr">11</a>,<a href="#B12-crystals-14-00952" class="html-bibr">12</a>,<a href="#B13-crystals-14-00952" class="html-bibr">13</a>].</div><div class='html-p'>One successful approach to address these challenges is the utilization of AlN template layers, which serve as a buffer to alleviate lattice mismatch effects and reduce dislocation densities. The crack density decreases with the increase of AlGaN layer thickness. When the thickness of the AlGaN layer reaches approximately 250 nm, the crack density will tend to zero. However, the cracks reappear when the film thickness increases further [<a href="#B14-crystals-14-00952" class="html-bibr">14</a>]. The occurrence of cracks can be reduced by introducing an about 70 nm thick AlN nucleation layer as well as a GaN/AlGaN superlattice [<a href="#B15-crystals-14-00952" class="html-bibr">15</a>]. According to the former researchers’ reports, as noted in ref. [<a href="#B16-crystals-14-00952" class="html-bibr">16</a>,<a href="#B17-crystals-14-00952" class="html-bibr">17</a>], cracking can be avoided during sample cooling by preventing the formation of amorphous Si<sub>3</sub>N<sub>4</sub> on the Si surface in the early growth stages and ensuring uniform AlN nucleation [<a href="#B16-crystals-14-00952" class="html-bibr">16</a>,<a href="#B17-crystals-14-00952" class="html-bibr">17</a>]. Step-graded AlGaN layers are also used to prevent stress relaxation in GaN on Si layers, acting as a dislocation filter and achieving a smooth surface morphology for crack-free epitaxial AlGaN layers [<a href="#B18-crystals-14-00952" class="html-bibr">18</a>,<a href="#B19-crystals-14-00952" class="html-bibr">19</a>,<a href="#B20-crystals-14-00952" class="html-bibr">20</a>,<a href="#B21-crystals-14-00952" class="html-bibr">21</a>,<a href="#B22-crystals-14-00952" class="html-bibr">22</a>]. Techniques like maskless lateral epitaxial overgrowth have also been utilized to further improve the crystalline quality by decoupling the epilayers from the substrate, enabling the growth of thick, crack-free layers [<a href="#B23-crystals-14-00952" class="html-bibr">23</a>].</div><div class='html-p'>The research group Rzhanov Institute of Semiconductor Physics in Russia, has been investigating the effect of a monolayer SiN film on the surface states of the AlN/GaN heterostructures grown by molecular beam epitaxy since 2015 [<a href="#B24-crystals-14-00952" class="html-bibr">24</a>,<a href="#B25-crystals-14-00952" class="html-bibr">25</a>,<a href="#B26-crystals-14-00952" class="html-bibr">26</a>]. Al atoms deposited on top of a highly ordered (8 × 8) structure can help the formation of a graphene-like AlN (g-AlN) layer, which greatly enhances the growth quality of Si/AlGaN materials.</div><div class='html-p'>In this paper, we report a high performance AlGaN-based ultraviolet PIN photodetector grown on a Si (111) substrate using a graphene-like AlN nucleation layer and step-graded AlGaN buffers. The tested threading dislocation density (TDD) of the PIN material is 2.4 × 10<sup>9</sup>/cm<sup>2</sup>. Through the application of the double-temperature annealing technique, the resistance of the n-type Ohmic contact can be reduced to 3.4 × 10<sup>−5</sup> Ωcm<sup>2</sup>. After an optimization of the fabrication process, the detectors achieve a dark current of 0.12 nA@−1 V and a peak responsivity of 0.12 A/W@274 nm.</div></section><section id='sec2-crystals-14-00952' type=''><h2 data-nested='1'> 2. Materials and Methods</h2><div class='html-p'>The AlGaN-on-Si photodetector materials were grown by molecular-beam epitaxy on 2-inch diameter Si (111) substrates in Riber CBE-32 system. The Si (111) substrates were pretreated using the wet chemical etching procedure to form the hydrogen-saturated surface [<a href="#B27-crystals-14-00952" class="html-bibr">27</a>,<a href="#B28-crystals-14-00952" class="html-bibr">28</a>,<a href="#B29-crystals-14-00952" class="html-bibr">29</a>]. After the etching, the substrates were dried by high purity N<sub>2</sub> with 5-nines (5N) purity and introduced into the vacuum chamber for 15–20 min. Subsequently, the outgas procedure was carried out in a preparatory vacuum chamber at 600 °C for two hours. The substrate temperature was controlled by an infrared pyrometer. The high-purity ammonia (8N) utilized as the active nitrogen underwent an additional purifying process via a filter. The aluminum cold lip source with cold neck pyrolytic boron nitride (PBN) crucible and gallium double zone source with pyrolytic graphite (PG) crucible were employed as the gallium and aluminum sources, respectively.</div><div class='html-p'>In order to completely remove the surface oxide, the silicon substrates underwent high-temperature annealing up to 1100 °C, resulting in the formation of a 7 × 7 reconstruction on the reflection high-energy electron diffraction (RHEED) pattern of the Si (111) surface upon cooling below 830 °C. The de-oxidation process occurred during the annealing procedure, forming a clean and smooth surface for the nitridation of the silicon substrates.</div><div class='html-p'>After the surface annealing process, a standard initial nitridation process in NH<sub>3</sub>-MBE was performed. The Si substrate was heated to 950 °C and exposed to the ammonia flux of 10 sccm. Within a few seconds, the SiN-8 × 8 structure fractional reflections appeared in the RHEED patterns. It is believed that the dominant role in the formation of the SiN-8 × 8 structure was played by mobile Si adatoms that were in equilibrium with the Si surface [<a href="#B30-crystals-14-00952" class="html-bibr">30</a>]. After 40 s of nitridation, graphene-like SiN covered the silicon surface and the intensity of the 8 × 8 refractive patterns reached a maximum. Further increasing the nitridation time would form an amorphous Si<sub>3</sub>N<sub>4</sub> layer on the silicon surface, and the diffraction pattern would disappear after several minutes.</div><div class='html-p'>An AlN flat ultrathin nucleation layer was prepared by depositing Al while the ammonia flux was off and achieving a background ammonia pressure of ~10<sup>−7</sup> to 10<sup>−8</sup> Torr. The ammonia flux was turned off when the optimal 8 × 8 RHEED pattern with sharp and bright eightfold fractional spots appeared. During the Al deposition, the source flux was set to match an AlN growth rate of ~0.1 ML/s. After approximately 5 MLs g-AlN growth, an ~150 nm thick AlN bulk layer was grown as a buffer layer for the step-graded buffer and the full photodetector structure growth.</div><div class='html-p'>The step-graded buffer consisted of 3 different composition AlGaN layers. After the 150 nm AlN layer, 150 nm Al<sub>0.85</sub>GaN, 150 nm Al<sub>0.75</sub>GaN, and 200 nm Al<sub>0.6</sub>GaN buffer layers were grown sequentially to enhance the strain relaxation and dislocation annihilation.</div><div class='html-p'>The entire photodetector structure, which has been verified as effective by the Center for Quantum Devices in Northwestern University (CQD) [<a href="#B31-crystals-14-00952" class="html-bibr">31</a>], was grown following the step-graded buffer. On top of the last step of the step-graded buffer, the Al<sub>0.6</sub>GaN buffer layer, a 600 nm thick Si doped n-type Al<sub>0.5</sub>GaN conduction layer was grown. This layer also served as a dislocation annihilation layer to further reduce the dislocation density. Following this highly conductive layer, the p-i-n active region consisted of 35 nm Si-doped n-type Al<sub>0.45</sub>GaN with a doping concentration of 7.2 × 10<sup>17</sup>/cm<sup>3</sup>, followed by 200 nm not intentionally doped (NID) intrinsic absorber region, and 50 nm Mg-doped p-type Al<sub>0.38</sub>GaN with a doping concentration of 2.4 × 10<sup>16</sup>/cm<sup>3</sup> was grown. To facilitate the formation of the Ohmic contacts, a 100 nm Mg doped p-type GaN with a doping concentration of 2.1 × 10<sup>18</sup>/cm<sup>3</sup> was grown as a cap layer. The scanning electron microscopy (SEM) cross-sectional images of the entire epitaxial structure and the microscopic images of the grown material’s surface under 100× and 1000× magnifications are shown in <a href="#crystals-14-00952-f001" class="html-fig">Figure 1</a>.</div><div class='html-p'>The epitaxial wafer was cleaned in acetone and ethanol before the subsequent processing procedure to remove surface-organic and pollutants. A photodetector mesa was etched with inductively coupled plasma (ICP) to the n-contact layer and protected with SiO<sub>2</sub> grown by plasma-enhanced chemical vapor deposition (PECVD) to suppress the leakage current on the mesa side. P- and n-type contact windows were opened on SiO<sub>2</sub> with photolithography and reactive ion etching (RIE). After that, the p-type Ti/Pt/Au and n-type Ti/Al/Ti/Au were deposited with magnetron sputtering and evaporation, respectively, and protected with SiO<sub>2</sub> grown by PECVD again. Finally, two electrode pads were symmetrically deposited following the opening contact pad windows. The fabrication procedure for the photodetectors is illustrated in <a href="#crystals-14-00952-f002" class="html-fig">Figure 2</a>.</div></section><section id='sec3-crystals-14-00952' type='results'><h2 data-nested='1'> 3. Results and Discussion</h2><div class='html-p'>The substrate preparation process, including high-temperature annealing for 7 × 7 reconstruction and pre-nitridation of the Si substrate for 8 × 8 reconstruction with a SiN-like intermediate layer has been extensively studied previously [<a href="#B16-crystals-14-00952" class="html-bibr">16</a>,<a href="#B17-crystals-14-00952" class="html-bibr">17</a>,<a href="#B24-crystals-14-00952" class="html-bibr">24</a>,<a href="#B25-crystals-14-00952" class="html-bibr">25</a>,<a href="#B26-crystals-14-00952" class="html-bibr">26</a>,<a href="#B30-crystals-14-00952" class="html-bibr">30</a>]. <a href="#crystals-14-00952-f003" class="html-fig">Figure 3</a>a presents a transmission electron microscope (TEM) high-angle annular dark field (HAADF) image depicting the Si/AlN interface along with the step-graded buffers. At the Si/AlN interface, the nucleation layer functions as a dislocation filter, localizing stress on the interface by generating misfit dislocations. This effect is accomplished by introducing both SiN and AlN ultrathin flat nucleation layers during the nitridation process. Additionally, the TEM dark field image of the interface is also shown in <a href="#crystals-14-00952-f003" class="html-fig">Figure 3</a>b, where a regularly arranged stress field can be seen, indicating periodic stress release at the Si/AlN interface.</div><div class='html-p'>The dark field image corresponding to step-graded buffers is also presented in <a href="#crystals-14-00952-f003" class="html-fig">Figure 3</a>c. The orange dash dot lines indicate interfaces within these graded structures. By finely tuning the growth parameters across the steps, it becomes possible to terminate dislocation lines at these interfaces, as illustrated by red arrows. To further assess the effectiveness of these step-graded buffers, additional TEM HAADF images were employed to capture inclined dislocation configurations between AlGaN layers as shown in <a href="#crystals-14-00952-f004" class="html-fig">Figure 4</a>.</div><div class='html-p'>Former analysis has elucidated mechanisms underlying stress relaxation and their correlation with dislocation inclinations [<a href="#B32-crystals-14-00952" class="html-bibr">32</a>,<a href="#B33-crystals-14-00952" class="html-bibr">33</a>]. As observed in <a href="#crystals-14-00952-f004" class="html-fig">Figure 4</a>a, dislocations exhibit abrupt inclinations at the interface between different graded AlGaN layers. The projected length of the inclined dislocation acts as a misfit dislocation segment to relax the compressive strain [<a href="#B33-crystals-14-00952" class="html-bibr">33</a>]. It is posited that greater lattice mismatch strains induce larger bend angles of dislocation inclination. This can be proved in <a href="#crystals-14-00952-f004" class="html-fig">Figure 4</a>b, which reveals that significant compositional differences between Al<sub>0.75</sub>GaN and Al<sub>0.6</sub>GaN yield larger inclination angles compared to those observed between Al<sub>0.85</sub>GaN and Al<sub>0.75</sub>GaN, thereby enhancing opportunities for interactions among dislocations.</div><div class='html-p'>The dislocation density in the step-graded buffer layers can be expressed using an empirical formula proposed by Fitzgerald et al. [<a href="#B34-crystals-14-00952" class="html-bibr">34</a>,<a href="#B35-crystals-14-00952" class="html-bibr">35</a>]:<div class='html-disp-formula-info' id='FD1-crystals-14-00952'> <div class='f'> <math display='block'><semantics> <mrow> <msub> <mrow> <mi mathvariant="sans-serif">ρ</mi> </mrow> <mrow> <mi mathvariant="normal">t</mi> </mrow> </msub> <mo>=</mo> <mstyle scriptlevel="0" displaystyle="true"> <mfrac> <mrow> <mn>2</mn> <msub> <mrow> <mi mathvariant="normal">R</mi> </mrow> <mrow> <mi mathvariant="normal">g</mi> </mrow> </msub> <msub> <mrow> <mi mathvariant="normal">R</mi> </mrow> <mrow> <mi mathvariant="normal">g</mi> <mi mathvariant="normal">r</mi> </mrow> </msub> <msup> <mrow> <mi mathvariant="normal">e</mi> </mrow> <mrow> <mfrac> <mrow> <mi mathvariant="normal">U</mi> </mrow> <mrow> <mi mathvariant="normal">k</mi> <mi mathvariant="normal">T</mi> </mrow> </mfrac> </mrow> </msup> </mrow> <mrow> <mfenced open="|" close="|" separators="|"> <mrow> <mi mathvariant="normal">b</mi> </mrow> </mfenced> <mi mathvariant="normal">B</mi> <msup> <mrow> <mi mathvariant="normal">Y</mi> </mrow> <mrow> <mi mathvariant="normal">m</mi> </mrow> </msup> <msubsup> <mrow> <mi mathvariant="sans-serif">ε</mi> </mrow> <mrow> <mi mathvariant="normal">e</mi> <mi mathvariant="normal">f</mi> <mi mathvariant="normal">f</mi> </mrow> <mrow> <mi mathvariant="normal">m</mi> </mrow> </msubsup> </mrow> </mfrac> </mstyle> <mo>∝</mo> <mstyle scriptlevel="0" displaystyle="true"> <mfrac> <mrow> <msub> <mrow> <mi mathvariant="normal">R</mi> </mrow> <mrow> <mi mathvariant="normal">g</mi> </mrow> </msub> <msub> <mrow> <mi mathvariant="normal">R</mi> </mrow> <mrow> <mi mathvariant="normal">g</mi> <mi mathvariant="normal">r</mi> </mrow> </msub> </mrow> <mrow> <mi mathvariant="normal">V</mi> </mrow> </mfrac> </mstyle> </mrow> </semantics></math> </div> <div class='l'> <label >(1)</label> </div> </div> where r<sub>t</sub> is the threading dislocation (TD) density, B is a constant with a unit of velocity, Y is Yang’s modulus, ε<sub>eff</sub> is the strain reduced by the dislocation flow, m is an exponent between 1 and 2, R<sub>g</sub> is the growth rate, R<sub>gr</sub> is the variation rate (lattice mismatch per unit thickness), U is the dislocation glide activation energy, k is the Boltzmann constant, T is the absolute temperature, and V is the dislocation slip velocity.</div><div class='html-p'>According to the empirical formula, the TD density exhibits a positive correlation with both growth rates and variations between respective grading structures. This is evidenced in <a href="#crystals-14-00952-f004" class="html-fig">Figure 4</a>c, where an increased number of dislocation lines is generated at the interface between AlN/Al<sub>0.85</sub>GaN and Al<sub>0.75</sub>GaN/Al<sub>0.6</sub>GaN. In contrast, at the interface between Al<sub>0.85</sub>GaN/Al<sub>0.75</sub>GaN, dislocation lines tend to merge, resulting in a reduction of TDs (indicated by yellow circles).</div><div class='html-p'>Considering these mechanisms, the careful design of step-graded buffer layers is essential to enhance the bend angle of dislocation lines, thereby facilitating TDs annihilation through increased compositional differences between step layers while simultaneously reducing interface dislocation generation by decreasing either growth rate or compositional variation rate across steps. Following systematic optimization of growth parameters, the TD density for the entire photodetector structure was estimated to be 2.4 × 10<sup>9</sup>/cm<sup>2</sup> based on XRD FWHM and TEM analyses.</div><div class='html-p'>An important factor limiting the performance of the solar-blind UV devices is achieving effective Ohmic contacts between high Al composition AlGaN and the Ohmic contact metals. It is well known that the increase in the aluminum fraction raises both the band gap and the election affinity of AlGaN, worsening the Ohmic contact barriers, causing nonlinear behavior, and elevating the device resistivity [<a href="#B36-crystals-14-00952" class="html-bibr">36</a>,<a href="#B37-crystals-14-00952" class="html-bibr">37</a>,<a href="#B38-crystals-14-00952" class="html-bibr">38</a>,<a href="#B39-crystals-14-00952" class="html-bibr">39</a>]. To optimize the contact resistivity, we introduced a double-temperature annealing technique to improve the fabricated 30 nm-Ti/100 nm-Al/30 nm-Ti/30 nm-Au Ohmic contact performance of the n-type AlGaN.</div><div class='html-p'>L. Wang et al. [<a href="#B40-crystals-14-00952" class="html-bibr">40</a>] conducted a comprehensive analysis of the n-type Ohmic contact in GaN over a temperature range of 400–950 °C, determining that the optimal annealing temperature for Ti/Al/Mo/Au is 850 °C. We have adopted this finding and established our primary annealing temperature at 850 °C. <a href="#crystals-14-00952-f005" class="html-fig">Figure 5</a> illustrates the IV curve of the metal pad used for the circular transmission line method (CTLM) Ohmic contact test under different annealing conditions. And the annealing condition and the calculated resistivity are listed in <a href="#crystals-14-00952-t001" class="html-table">Table 1</a>. As depicted in <a href="#crystals-14-00952-f005" class="html-fig">Figure 5</a>, the as-grown sample exhibits pronounced modulation characteristics indicating Schottky contact behavior at the metal/Al<sub>0.5</sub>GaN interface. Annealing at 850 °C improves the Ohmic behavior of the contact. However, if the annealing time is too short, the effectiveness of annealing will be affected; if the annealing time is too long, the surface morphology of the contact pad will be greatly deteriorated (as shown in the inset of <a href="#crystals-14-00952-f005" class="html-fig">Figure 5</a>, deteriorated surface of the metal pad after annealing at 850 °C for 60 s). Further increasing the annealing temperature or the time optimizes Ohmic contact characteristics within a limited range but compromises surface quality.</div><div class='html-p'>To further decrease the resistivity of the Ohmic contact, a low-temperature annealing procedure was introduced before high-temperature annealing. As shown in <a href="#crystals-14-00952-t001" class="html-table">Table 1</a>, after 10 min at 350 °C and 30 s at 900 °C, the resistivity of the n-type Ohmic contact reduced to 3.43 × 10<sup>−5</sup>. It is believed that the reaction between Ti and Al starts at lower temperatures (250–300 °C), forming primary products such as Al<sub>3</sub>Ti and α-Ti [<a href="#B39-crystals-14-00952" class="html-bibr">39</a>]. Also, Au is mobile at this low annealing temperature, allowing it to diffuse into the interior of the metal contacts and react with Al and Ti, forming AlAu<sub>x</sub>Ti alloys. The formation of this alloy layer hinders the out diffusion of Al/Ti and prevents the oxidation of aluminum from generating Al/Ti-oxide at a high temperature and reduces conductivity. Annealing at 900 °C after low-temperature annealing promotes the further in-diffusion of Ti to AlGaN, form TiN at the metal/AlGaN interface and generate nitrogen vacancies in the AlGaN layers that help form 2DEG at the metal-semiconductor interface and finally reduce the resistivity of the Ohmic contact [<a href="#B40-crystals-14-00952" class="html-bibr">40</a>].</div><div class='html-p'><a href="#crystals-14-00952-f006" class="html-fig">Figure 6</a> illustrates the responsivity and the dark current of the fabricated photodetectors. The dark current of the 100 um diameter device is tested to be 0.12 nA at −1 V. The responsivity of the photodetectors was measured using a high-intensity xenon arc lamp, monochromator, and reference calibrated UV-enhanced silicon photodetector. The tested peak responsivity of the photodetector is 0.12 A/W at −5 V and the peak detection wavelength is 274 nm. A low photo response persists because of the weak Schottky-photodetector-like behavior of the p-type contact and should be eliminated by optimizing the p-type Ohmic contacts. To validate the performance of this device, we also compared it with previously reported similar devices as presented in <a href="#crystals-14-00952-t002" class="html-table">Table 2</a>.</div></section><section id='sec4-crystals-14-00952' type='conclusions'><h2 data-nested='1'> 4. Conclusions</h2><div class='html-p'>An AlGaN-based UV PIN photodetector fabricated on Si(111) substrates is reported in this study. The incorporation of silicon nitridation, in conjunction with an AlN nucleation layer and step-graded buffer layer growth, enhances the quality of the AlGaN/Si structure and reduces the dislocation density of the whole photodetector structure to 2.4 × 10<sup>9</sup>/cm<sup>2</sup>. The application of a double-temperature annealing technique effectively lowers the resistance of the n-type Ohmic contact by facilitating the formation of AlAu<sub>x</sub>Ti alloys at relatively low temperatures and TiN at elevated temperatures. Consequently, the optimized n-type resistivity for the metal/AlGaN contact has been reduced to 3.43 × 10<sup>−5</sup> Ω·cm<sup>2</sup>. Following process optimization, the detectors exhibit a dark current of 0.12 nA at −1 V and a peak responsivity of 0.12 A/W at 274 nm.</div></section> </div> <div class="html-back"> <section class='html-notes'><h2 >Author Contributions</h2><div class='html-p'>J.L. and Y.M. contributed to this work equally. Conceptualization, J.L., Y.S. and K.Z.; methodology, J.L. and Y.M.; validation, J.L. and Y.M.; formal analysis, J.L., Y.Z. and Y.M.; investigation, J.L., Y.Z. and Y.M.; resources, J.L., Y.S., G.W., K.Z. and X.W.; data curation, J.L. and Y.Z.; writing–original draft preparation, J.L.; writing–review and editing, J.L. and Y.M.; visualization, J.L., Y.Z. and Y.M.; supervision, Y.S., K.Z. and X.W.; project administration, Y.S., K.Z. and X.W.; funding acquisition, X.W. All authors have read and agreed to the published version of the manuscript.</div></section><section class='html-notes'><h2>Funding</h2><div class='html-p'>This research was funded by the National Key R and D Program of China (2018YFE0203102, 2018YFE0203103), the Open Fund of IPOC (BUPT) IPOC2022A10.</div></section><section class='html-notes'><h2 >Data Availability Statement</h2><div class='html-p'>The original contributions presented in the study are included in the article, further inquiries can be directed to the corresponding author. </div></section><section id='html-ack' class='html-ack'><h2 >Acknowledgments</h2><div class='html-p'>Y.M. and K.Z. acknowledges partial support within the State Assignments from the Ministry of Science and Higher Education of the Russian Federation to the Rzhanov Institute of Semiconductor Physics SB RAS (0242-2022-0005).</div></section><section class='html-notes'><h2 >Conflicts of Interest</h2><div class='html-p'>The authors declare no conflicts of interest.</div></section><section id='html-references_list'><h2>References</h2><ol class='html-xx'><li id='B1-crystals-14-00952' class='html-x' data-content='1.'>Razeghi, M.; Rogalski, A. 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[<a href="https://scholar.google.com/scholar_lookup?title=Monolithic+integration+of+ultraviolet+light+emitting+diodes+and+photodetectors+on+a+p-GaN/AlGaN/GaN/Si+platform&author=Lyu,+Q.F.&author=Jiang,+H.X.&author=Lau,+K.M.&publication_year=2021&journal=Opt.+Express&volume=29&pages=8358%E2%80%938364&doi=10.1364/OE.418843" class='google-scholar' target='_blank' rel='noopener noreferrer'>Google Scholar</a>] [<a href="https://doi.org/10.1364/OE.418843" class='cross-ref' target='_blank' rel='noopener noreferrer'>CrossRef</a>]</li></ol></section><section id='FiguresandTables' type='display-objects'><div class="html-fig-wrap" id="crystals-14-00952-f001"> <div class='html-fig_img'> <div class="html-figpopup html-figpopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f001"> <img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001.png" alt="Crystals 14 00952 g001" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001-550.jpg" /> <a class="html-expand html-figpopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f001"></a> </div> </div> <div class="html-fig_description"> <b>Figure 1.</b> (<b>a</b>) Scanning electron microscopy (SEM) cross-sectional image of the entire photodetector structure and microscope images under (<b>b</b>) 100× and (<b>c</b>) 1000×.  </div> </div> <div class="html-fig_show mfp-hide" id="fig_body_display_crystals-14-00952-f001"> <div class="html-caption"> <b>Figure 1.</b> (<b>a</b>) Scanning electron microscopy (SEM) cross-sectional image of the entire photodetector structure and microscope images under (<b>b</b>) 100× and (<b>c</b>) 1000×.</div> <div class="html-img"><img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001.png" alt="Crystals 14 00952 g001" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g001.png" /></div> </div> <div class="html-fig-wrap" id="crystals-14-00952-f002"> <div class='html-fig_img'> <div class="html-figpopup html-figpopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f002"> <img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g002.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g002.png" alt="Crystals 14 00952 g002" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g002-550.jpg" /> <a class="html-expand html-figpopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f002"></a> </div> </div> <div class="html-fig_description"> <b>Figure 2.</b> Processing procedure and the microscope image of fabricated photodetectors.  </div> </div> <div class="html-fig_show mfp-hide" id="fig_body_display_crystals-14-00952-f002"> <div class="html-caption"> <b>Figure 2.</b> Processing procedure and the microscope image of fabricated photodetectors.</div> <div class="html-img"><img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g002.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g002.png" alt="Crystals 14 00952 g002" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g002.png" /></div> </div> <div class="html-fig-wrap" id="crystals-14-00952-f003"> <div class='html-fig_img'> <div class="html-figpopup html-figpopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f003"> <img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g003.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g003.png" alt="Crystals 14 00952 g003" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g003-550.jpg" /> <a class="html-expand html-figpopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f003"></a> </div> </div> <div class="html-fig_description"> <b>Figure 3.</b> Cross-sectional TEM images of the step-graded AlGaN buffers: (<b>a</b>) STEM HAADF image, (<b>b</b>) dark field image of the Si/AlN interface, and (<b>c</b>) dark field image of the step-graded buffer. (Orange lines indicate the interface of different graded steps).  </div> </div> <div class="html-fig_show mfp-hide" id="fig_body_display_crystals-14-00952-f003"> <div class="html-caption"> <b>Figure 3.</b> Cross-sectional TEM images of the step-graded AlGaN buffers: (<b>a</b>) STEM HAADF image, (<b>b</b>) dark field image of the Si/AlN interface, and (<b>c</b>) dark field image of the step-graded buffer. (Orange lines indicate the interface of different graded steps).</div> <div class="html-img"><img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g003.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g003.png" alt="Crystals 14 00952 g003" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g003.png" /></div> </div> <div class="html-fig-wrap" id="crystals-14-00952-f004"> <div class='html-fig_img'> <div class="html-figpopup html-figpopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f004"> <img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g004.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g004.png" alt="Crystals 14 00952 g004" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g004-550.jpg" /> <a class="html-expand html-figpopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f004"></a> </div> </div> <div class="html-fig_description"> <b>Figure 4.</b> Cross-sectional TEM images of the step-graded AlGaN buffers: (<b>a</b>) STEM HAADF image, (<b>b</b>) bend angle of the dislocation inclination at the different step interfaces, and (<b>c</b>) dislocation annihilation efficiency at different step interfaces. (orange lines indicate the interfaces of different graded steps and the yellow lines indicate the dislocation).  </div> </div> <div class="html-fig_show mfp-hide" id="fig_body_display_crystals-14-00952-f004"> <div class="html-caption"> <b>Figure 4.</b> Cross-sectional TEM images of the step-graded AlGaN buffers: (<b>a</b>) STEM HAADF image, (<b>b</b>) bend angle of the dislocation inclination at the different step interfaces, and (<b>c</b>) dislocation annihilation efficiency at different step interfaces. (orange lines indicate the interfaces of different graded steps and the yellow lines indicate the dislocation).</div> <div class="html-img"><img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g004.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g004.png" alt="Crystals 14 00952 g004" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g004.png" /></div> </div> <div class="html-fig-wrap" id="crystals-14-00952-f005"> <div class='html-fig_img'> <div class="html-figpopup html-figpopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f005"> <img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g005.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g005.png" alt="Crystals 14 00952 g005" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g005-550.jpg" /> <a class="html-expand html-figpopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f005"></a> </div> </div> <div class="html-fig_description"> <b>Figure 5.</b> IV profile under different annealing conditions. Inset: metal surface morphology deterioration under high-temperature long-time annealing.  </div> </div> <div class="html-fig_show mfp-hide" id="fig_body_display_crystals-14-00952-f005"> <div class="html-caption"> <b>Figure 5.</b> IV profile under different annealing conditions. Inset: metal surface morphology deterioration under high-temperature long-time annealing.</div> <div class="html-img"><img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g005.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g005.png" alt="Crystals 14 00952 g005" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g005.png" /></div> </div> <div class="html-fig-wrap" id="crystals-14-00952-f006"> <div class='html-fig_img'> <div class="html-figpopup html-figpopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f006"> <img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g006.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g006.png" alt="Crystals 14 00952 g006" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g006-550.jpg" /> <a class="html-expand html-figpopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#fig_body_display_crystals-14-00952-f006"></a> </div> </div> <div class="html-fig_description"> <b>Figure 6.</b> Responsivity and the IV curve of the fabricated photodetectors.  </div> </div> <div class="html-fig_show mfp-hide" id="fig_body_display_crystals-14-00952-f006"> <div class="html-caption"> <b>Figure 6.</b> Responsivity and the IV curve of the fabricated photodetectors.</div> <div class="html-img"><img data-large="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g006.png" data-original="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g006.png" alt="Crystals 14 00952 g006" data-lsrc="/crystals/crystals-14-00952/article_deploy/html/images/crystals-14-00952-g006.png" /></div> </div> <div class="html-table-wrap" id="crystals-14-00952-t001"> <div class="html-table_wrap_td"> <div class="html-tablepopup html-tablepopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href='#table_body_display_crystals-14-00952-t001'> <img data-lsrc="https://pub.mdpi-res.com/img/table.png" /> <a class="html-expand html-tablepopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#table_body_display_crystals-14-00952-t001"></a> </div> </div> <div class="html-table_wrap_discription"> <b>Table 1.</b> Resistivity of the n-type Ohmic contact under different annealing conditions. </div> </div> <div class="html-table_show mfp-hide " id="table_body_display_crystals-14-00952-t001"> <div class="html-caption"><b>Table 1.</b> Resistivity of the n-type Ohmic contact under different annealing conditions.</div> <table > <thead ><tr ><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Annealing Condition</th><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Resistivity (Ω·cm<sup>2</sup>)</th><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Profile</th></tr></thead><tbody ><tr ><td align='center' valign='middle' class='html-align-center' >As grown</td><td align='center' valign='middle' class='html-align-center' >0.1087</td><td align='center' valign='middle' class='html-align-center' >Nonlinear</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >850 °C 10 s</td><td align='center' valign='middle' class='html-align-center' >0.0660</td><td align='center' valign='middle' class='html-align-center' >Nonlinear</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >850 °C 60 s</td><td align='center' valign='middle' class='html-align-center' >0.0075</td><td align='center' valign='middle' class='html-align-center' >Linear</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >900 °C 30 s</td><td align='center' valign='middle' class='html-align-center' >0.0032</td><td align='center' valign='middle' class='html-align-center' >Linear</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >350 °C 1 min + 900 °C 30 s</td><td align='center' valign='middle' class='html-align-center' >0.0011</td><td align='center' valign='middle' class='html-align-center' >Linear</td></tr><tr ><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >350 °C 10 min + 900 °C 30 s</td><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >3.43 × 10<sup>−5</sup></td><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >Linear</td></tr></tbody> </table> </div> <div class="html-table-wrap" id="crystals-14-00952-t002"> <div class="html-table_wrap_td"> <div class="html-tablepopup html-tablepopup-link" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href='#table_body_display_crystals-14-00952-t002'> <img data-lsrc="https://pub.mdpi-res.com/img/table.png" /> <a class="html-expand html-tablepopup" data-counterslinkmanual = "https://www.mdpi.com/2073-4352/14/11/952/display" href="#table_body_display_crystals-14-00952-t002"></a> </div> </div> <div class="html-table_wrap_discription"> <b>Table 2.</b> Comparison of AlGaN UV photodetectors. </div> </div> <div class="html-table_show mfp-hide " id="table_body_display_crystals-14-00952-t002"> <div class="html-caption"><b>Table 2.</b> Comparison of AlGaN UV photodetectors.</div> <table > <thead ><tr ><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Year</th><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Substrate</th><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Type</th><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Wavelength</th><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Dark Current</th><th align='center' valign='middle' style='border-top:solid thin;border-bottom:solid thin' class='html-align-center' >Responsivity</th></tr></thead><tbody ><tr ><td align='center' valign='middle' class='html-align-center' >2001 [<a href="#B41-crystals-14-00952" class="html-bibr">41</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >PN</td><td align='center' valign='middle' class='html-align-center' >310 nm</td><td align='center' valign='middle' class='html-align-center' >200 uA@5 V</td><td align='center' valign='middle' class='html-align-center' >6 mA/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2007 [<a href="#B42-crystals-14-00952" class="html-bibr">42</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >MSM</td><td align='center' valign='middle' class='html-align-center' >297 nm</td><td align='center' valign='middle' class='html-align-center' >7.5 × 10<sup>−9</sup> A/cm<sup>2</sup></td><td align='center' valign='middle' class='html-align-center' >110 mA/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2013 [<a href="#B5-crystals-14-00952" class="html-bibr">5</a>]</td><td align='center' valign='middle' class='html-align-center' >Saphire</td><td align='center' valign='middle' class='html-align-center' >PIN</td><td align='center' valign='middle' class='html-align-center' >275 nm</td><td align='center' valign='middle' class='html-align-center' >2 × 10<sup>−9</sup> A/cm<sup>2</sup>@10 V</td><td align='center' valign='middle' class='html-align-center' >176 mA/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2015 [<a href="#B43-crystals-14-00952" class="html-bibr">43</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >PIN</td><td align='center' valign='middle' class='html-align-center' >290 nm</td><td align='center' valign='middle' class='html-align-center' >1.6 × 10<sup>−8</sup> A/cm<sup>2</sup></td><td align='center' valign='middle' class='html-align-center' >18.3 mA/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2017 [<a href="#B44-crystals-14-00952" class="html-bibr">44</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >nanorods</td><td align='center' valign='middle' class='html-align-center' >276 nm</td><td align='center' valign='middle' class='html-align-center' >-</td><td align='center' valign='middle' class='html-align-center' >115 mA/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2017 [<a href="#B45-crystals-14-00952" class="html-bibr">45</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >MSM</td><td align='center' valign='middle' class='html-align-center' >362 nm</td><td align='center' valign='middle' class='html-align-center' >0.43 nA@15 V</td><td align='center' valign='middle' class='html-align-center' >0.183 A/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2020 [<a href="#B46-crystals-14-00952" class="html-bibr">46</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >MSM</td><td align='center' valign='middle' class='html-align-center' >365 nm</td><td align='center' valign='middle' class='html-align-center' >3.3 × 10<sup>−7</sup> A/cm<sup>2</sup></td><td align='center' valign='middle' class='html-align-center' >-</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2020 [<a href="#B47-crystals-14-00952" class="html-bibr">47</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >V-Pit MSM</td><td align='center' valign='middle' class='html-align-center' >315 nm</td><td align='center' valign='middle' class='html-align-center' >0.7 nA</td><td align='center' valign='middle' class='html-align-center' >125 A/W@5 V</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2020 [<a href="#B48-crystals-14-00952" class="html-bibr">48</a>]</td><td align='center' valign='middle' class='html-align-center' >Saphire</td><td align='center' valign='middle' class='html-align-center' >PIN</td><td align='center' valign='middle' class='html-align-center' >270 nm</td><td align='center' valign='middle' class='html-align-center' >-</td><td align='center' valign='middle' class='html-align-center' >190.96 mA/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2020 [<a href="#B49-crystals-14-00952" class="html-bibr">49</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >HEMT</td><td align='center' valign='middle' class='html-align-center' >365 nm</td><td align='center' valign='middle' class='html-align-center' >2.9 × 10<sup>−8</sup> mA/mm</td><td align='center' valign='middle' class='html-align-center' >2 × 10<sup>4</sup> A/W</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2020 [<a href="#B50-crystals-14-00952" class="html-bibr">50</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >Disk</td><td align='center' valign='middle' class='html-align-center' >240 nm</td><td align='center' valign='middle' class='html-align-center' >10 nA@6 V</td><td align='center' valign='middle' class='html-align-center' >-</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2020 [<a href="#B51-crystals-14-00952" class="html-bibr">51</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >Schottky</td><td align='center' valign='middle' class='html-align-center' >~278 nm</td><td align='center' valign='middle' class='html-align-center' >3 × 10<sup>−8</sup> A/cm<sup>2</sup></td><td align='center' valign='middle' class='html-align-center' >-</td></tr><tr ><td align='center' valign='middle' class='html-align-center' >2021 [<a href="#B52-crystals-14-00952" class="html-bibr">52</a>]</td><td align='center' valign='middle' class='html-align-center' >Si</td><td align='center' valign='middle' class='html-align-center' >HEMT</td><td align='center' valign='middle' class='html-align-center' >360 nm</td><td align='center' valign='middle' class='html-align-center' >~1 × 10<sup>−7</sup> mA/mm</td><td align='center' valign='middle' class='html-align-center' >3.5 × 10<sup>5</sup> A/W</td></tr><tr ><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >This work</td><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >Si</td><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >PIN</td><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >274 nm</td><td align='center' valign='middle' style='border-bottom:solid thin' class='html-align-center' >0.12 nA</td><td align='center' valign='middle' style='border-bottom:solid thin' 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AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers. <em>Crystals</em> <b>2024</b>, <em>14</em>, 952. https://doi.org/10.3390/cryst14110952 </p> <div style="display: block"> <b>AMA Style</b><br> <p> Li J, Maidebura Y, Zhang Y, Wu G, Su Y, Zhuravlev K, Wei X. AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers. <em>Crystals</em>. 2024; 14(11):952. https://doi.org/10.3390/cryst14110952 </p> <b>Chicago/Turabian Style</b><br> <p> Li, Jian, Yan Maidebura, Yang Zhang, Gang Wu, Yanmei Su, Konstantin Zhuravlev, and Xin Wei. 2024. "AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers" <em>Crystals</em> 14, no. 11: 952. https://doi.org/10.3390/cryst14110952 </p> <b>APA Style</b><br> <p> Li, J., Maidebura, Y., Zhang, Y., Wu, G., Su, Y., Zhuravlev, K., & Wei, X. (2024). AlGaN-Based Ultraviolet PIN Photodetector Grown on Silicon Substrates Using SiN Nitridation Process and Step-Graded Buffers. <em>Crystals</em>, <em>14</em>(11), 952. https://doi.org/10.3390/cryst14110952 </p> </div> </div> <div class="info-box no-margin"> Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. 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