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is-link">Go</button> </div> </div> </form> </div> </div> <ol class="breathe-horizontal" start="1"> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2411.17416">arXiv:2411.17416</a> <span> [<a href="https://arxiv.org/pdf/2411.17416">pdf</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Applied Physics">physics.app-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Biological Physics">physics.bio-ph</span> </div> </div> <p class="title is-5 mathjax"> A Method for Fabricating CMOS Back-End-of-Line-Compatible Solid-State Nanopore Devices </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/physics?searchtype=author&query=Bouhamidi%2C+M+Y">Mohamed Yassine Bouhamidi</a>, <a href="/search/physics?searchtype=author&query=Dai%2C+C">Chunhui Dai</a>, <a href="/search/physics?searchtype=author&query=Stephan%2C+M">Michel Stephan</a>, <a href="/search/physics?searchtype=author&query=Nag%2C+J">Joyeeta Nag</a>, <a href="/search/physics?searchtype=author&query=Kinney%2C+J">Justin Kinney</a>, <a href="/search/physics?searchtype=author&query=Wan%2C+L">Lei Wan</a>, <a href="/search/physics?searchtype=author&query=Waugh%2C+M">Matthew Waugh</a>, <a href="/search/physics?searchtype=author&query=Briggs%2C+K">Kyle Briggs</a>, <a href="/search/physics?searchtype=author&query=Katine%2C+J">Jordan Katine</a>, <a href="/search/physics?searchtype=author&query=Tabard-Cossa%2C+V">Vincent Tabard-Cossa</a>, <a href="/search/physics?searchtype=author&query=Bedau%2C+D">Daniel Bedau</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2411.17416v1-abstract-short" style="display: inline;"> Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small molecules to large polymers. Interestingly, due to their high spatial resolution, nanopores can also identify tags on long polymers, making them an attractive option as the reading element for molecular information storage… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2411.17416v1-abstract-full').style.display = 'inline'; document.getElementById('2411.17416v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2411.17416v1-abstract-full" style="display: none;"> Solid-state nanopores, nm-sized holes in thin, freestanding membranes, are powerful single-molecule sensors capable of interrogating a wide range of target analytes, from small molecules to large polymers. Interestingly, due to their high spatial resolution, nanopores can also identify tags on long polymers, making them an attractive option as the reading element for molecular information storage strategies. To fully leverage the compact and robust nature of solid-state nanopores, however, they will need to be packaged in a highly parallelized manner with on-chip electronic signal processing capabilities to rapidly and accurately handle the data generated. Additionally, the membrane itself must have specific physical, chemical, and electrical properties to ensure sufficient signal-to-noise ratios are achieved, with the traditional membrane material being SiNX . Unfortunately, the typical method of deposition, low-pressure vapour deposition, requires temperatures beyond the thermal budget of CMOS back-end-of-line integration processes, limiting the potential to generate an on-chip solution. To this end, we explore various lower-temperature deposition techniques that are BEOL-compatible to generate SiNx membranes for solid-state nanopore use, and successfully demonstrate the ability for these alternative methods to generate low-noise nanopores that are capable of performing single-molecule experiments. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2411.17416v1-abstract-full').style.display = 'none'; document.getElementById('2411.17416v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 26 November, 2024; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> November 2024. </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2301.05854">arXiv:2301.05854</a> <span> [<a href="https://arxiv.org/pdf/2301.05854">pdf</a>, <a href="https://arxiv.org/format/2301.05854">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Applied Physics">physics.app-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> </div> <p class="title is-5 mathjax"> CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/physics?searchtype=author&query=Nag%2C+J">Jadupati Nag</a>, <a href="/search/physics?searchtype=author&query=Venkatesh%2C+R">R. Venkatesh</a>, <a href="/search/physics?searchtype=author&query=Jha%2C+A">Ajay Jha</a>, <a href="/search/physics?searchtype=author&query=Stamenov%2C+P">Plamen Stamenov</a>, <a href="/search/physics?searchtype=author&query=Babu%2C+P+D">P. D. Babu</a>, <a href="/search/physics?searchtype=author&query=Alam%2C+A">Aftab Alam</a>, <a href="/search/physics?searchtype=author&query=Suresh%2C+K+G">K. G. Suresh</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2301.05854v1-abstract-short" style="display: inline;"> Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2301.05854v1-abstract-full').style.display = 'inline'; document.getElementById('2301.05854v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2301.05854v1-abstract-full" style="display: none;"> Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses interesting spintronic and thermoelectric properties. Magnetization data reveal a weak ferri-/antiferro magnetic ordering at low temperatures, with only a very small moment $\sim$ 0.13 $渭_B$/f.u., attributed to the disorder. Transport results provide strong evidence of semimetallicity dominated by two-band conduction, while magnetoresistance data show a non-saturating, linear, positive, magnetoresistance. Spin polarization measurements using point-contact Andreev reflection spectra reveal a reasonably high spin polarization of $\sim$ 50\%, which matches fairly well with the simulated result. Furthermore, CoRuVSi shows a high thermopower value of $0.7$ $m Watt/ m-K^{2}$ at room temperature with the dominant contribution from the semimetallic bands, rendering it as a promising thermoelectric material as well. Our ab-initio simulation not only confirms a unique semimetallic feature, but also reveals that the band structure hosts a linear band crossing at $\sim$ -0.4 eV below the Fermi level incorporated by a band-inversion. In addition, the observed topological non-trivial features of the band structure is corroborated with the simulated Berry curvature, intrinsic anomalous Hall conductivity and the Fermi surface. The coexistence of many interesting properties relevant for spintronic, topological and thermoelectric applications in a single material is extremely rare and hence this study could promote a similar strategy to identify other potential materials belonging to same class. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2301.05854v1-abstract-full').style.display = 'none'; document.getElementById('2301.05854v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 14 January, 2023; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> January 2023. </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2011.05492">arXiv:2011.05492</a> <span> [<a href="https://arxiv.org/pdf/2011.05492">pdf</a>, <a href="https://arxiv.org/format/2011.05492">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Applied Physics">physics.app-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> <div class="is-inline-block" style="margin-left: 0.5rem"> <div class="tags has-addons"> <span class="tag is-dark is-size-7">doi</span> <span class="tag is-light is-size-7"><a class="" href="https://doi.org/10.1038/s41467-020-20661-8">10.1038/s41467-020-20661-8 <i class="fa fa-external-link" aria-hidden="true"></i></a></span> </div> </div> </div> <p class="title is-5 mathjax"> Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/physics?searchtype=author&query=Aryana%2C+K">Kiumars Aryana</a>, <a href="/search/physics?searchtype=author&query=Gaskins%2C+J+T">John T. Gaskins</a>, <a href="/search/physics?searchtype=author&query=Nag%2C+J">Joyeeta Nag</a>, <a href="/search/physics?searchtype=author&query=Stewart%2C+D+A">Derek A. Stewart</a>, <a href="/search/physics?searchtype=author&query=Bai%2C+Z">Zhaoqiang Bai</a>, <a href="/search/physics?searchtype=author&query=Mukhopadhyay%2C+S">Saikat Mukhopadhyay</a>, <a href="/search/physics?searchtype=author&query=Read%2C+J+C">John C. Read</a>, <a href="/search/physics?searchtype=author&query=Olson%2C+D+H">David H. Olson</a>, <a href="/search/physics?searchtype=author&query=Hoglund%2C+E+R">Eric R. Hoglund</a>, <a href="/search/physics?searchtype=author&query=Howe%2C+J+M">James M. Howe</a>, <a href="/search/physics?searchtype=author&query=Giri%2C+A">Ashutosh Giri</a>, <a href="/search/physics?searchtype=author&query=Grobis%2C+M+K">Michael K. Grobis</a>, <a href="/search/physics?searchtype=author&query=Hopkins%2C+P+E">Patrick E. Hopkins</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2011.05492v1-abstract-short" style="display: inline;"> Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2011.05492v1-abstract-full').style.display = 'inline'; document.getElementById('2011.05492v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2011.05492v1-abstract-full" style="display: none;"> Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2011.05492v1-abstract-full').style.display = 'none'; document.getElementById('2011.05492v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 10 November, 2020; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> November 2020. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Report number:</span> Nature Communications 12, 774 (2021) </p> </li> <li class="arxiv-result"> <div class="is-marginless"> <p class="list-title is-inline-block"><a href="https://arxiv.org/abs/2011.00533">arXiv:2011.00533</a> <span> [<a href="https://arxiv.org/pdf/2011.00533">pdf</a>, <a href="https://arxiv.org/format/2011.00533">other</a>] </span> </p> <div class="tags is-inline-block"> <span class="tag is-small is-link tooltip is-tooltip-top" data-tooltip="Applied Physics">physics.app-ph</span> <span class="tag is-small is-grey tooltip is-tooltip-top" data-tooltip="Materials Science">cond-mat.mtrl-sci</span> </div> </div> <p class="title is-5 mathjax"> Bipolar Magnetic Semiconducting Behavior in VNbRuAl: A New Spintronic Material for Spin Filters </p> <p class="authors"> <span class="search-hit">Authors:</span> <a href="/search/physics?searchtype=author&query=Nag%2C+J">Jadupati Nag</a>, <a href="/search/physics?searchtype=author&query=Rani%2C+D">Deepika Rani</a>, <a href="/search/physics?searchtype=author&query=Kangsabanik%2C+J">Jiban Kangsabanik</a>, <a href="/search/physics?searchtype=author&query=Babu%2C+P+D">P. D. Babu</a>, <a href="/search/physics?searchtype=author&query=Suresh%2C+K+G">K. G. Suresh</a>, <a href="/search/physics?searchtype=author&query=Alam%2C+A">Aftab Alam</a> </p> <p class="abstract mathjax"> <span class="has-text-black-bis has-text-weight-semibold">Abstract</span>: <span class="abstract-short has-text-grey-dark mathjax" id="2011.00533v1-abstract-short" style="display: inline;"> We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in… <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2011.00533v1-abstract-full').style.display = 'inline'; document.getElementById('2011.00533v1-abstract-short').style.display = 'none';">▽ More</a> </span> <span class="abstract-full has-text-grey-dark mathjax" id="2011.00533v1-abstract-full" style="display: none;"> We report the theoretical prediction of a new class of spintronic materials, namely bipolar magnetic semiconductor (BMS), which is also supported by our experimental data. BMS acquires a unique band structure with unequal band gaps for spin up and down channels, and thus are useful for tunable spin transport based applications such as spin filters. The valence band (VB) and conduction band (CB) in BMS approach the Fermi level through opposite spin channels, and hence facilitate to achieve reversible spin polarization which are controllable via applied gate voltage. We report the quaternary Heusler alloy VNbRuAl to exactly possess the band structure of BMS. The alloy is found to crystallize in LiMgPdSn prototype structure (space group $F\bar{4}3m$) with B$2$ disorder and lattice parameter 6.15 脜. The resistivity and Hall measurements show a two channel semiconducting behavior and a quasi linear dependence of negative magneto resistance (MR) indicating the possible semiconducting nature. Interestingly, VNbRuAl also shows a fully compensated ferrimagnetic (FCF) behavior with vanishing net magnetization (m$_s$$\sim$ $10^{-3}$ $渭_B/f.u.$) and significantly high ordering temperature ($> 900$ K). Unlike conventional FCF, vanishing moment in this case appears to be the result of a combination of long range antiferromagnetic (AFM) ordering and the inherent B2 disorder of the crystal. This study opens up the possibility of finding a class of materials for AFM spintronics, with great significance both from fundamental and applied fronts. <a class="is-size-7" style="white-space: nowrap;" onclick="document.getElementById('2011.00533v1-abstract-full').style.display = 'none'; document.getElementById('2011.00533v1-abstract-short').style.display = 'inline';">△ Less</a> </span> </p> <p class="is-size-7"><span class="has-text-black-bis has-text-weight-semibold">Submitted</span> 1 November, 2020; <span class="has-text-black-bis has-text-weight-semibold">originally announced</span> November 2020. </p> <p class="comments is-size-7"> <span class="has-text-black-bis has-text-weight-semibold">Comments:</span> <span class="has-text-grey-dark mathjax">9 pages, 9 figures</span> </p> </li> </ol> <div class="is-hidden-tablet">  <span class="help" style="display: inline-block;"><a href="https://github.com/arXiv/arxiv-search/releases">Search v0.5.6 released 2020-02-24</a>  </span> </div> 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